Gotowa bibliografia na temat „Boron diffusion”
Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych
Spis treści
Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Boron diffusion”.
Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.
Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.
Artykuły w czasopismach na temat "Boron diffusion"
Wirbeleit, Frank. "Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals". Defect and Diffusion Forum 305-306 (październik 2010): 71–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.305-306.71.
Pełny tekst źródłaWirbeleit, Frank. "Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si0.75Ge0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant". Defect and Diffusion Forum 307 (grudzień 2010): 63–73. http://dx.doi.org/10.4028/www.scientific.net/ddf.307.63.
Pełny tekst źródłaAleksandrov, O. V., i E. N. Mokhov. "Boron Diffusion in Silicon Carbide". Materials Science Forum 740-742 (styczeń 2013): 561–64. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.561.
Pełny tekst źródłaAgarwal, Aditya, H. J. Gossmann i D. J. Eaglesham. "Boron-enhanced diffusion of boron: Physical mechanisms". Applied Physics Letters 74, nr 16 (19.04.1999): 2331–33. http://dx.doi.org/10.1063/1.123841.
Pełny tekst źródłaMarchiando, J. F., P. Roitman i J. Albers. "Boron diffusion in silicon". IEEE Transactions on Electron Devices 32, nr 11 (listopad 1985): 2322–30. http://dx.doi.org/10.1109/t-ed.1985.22278.
Pełny tekst źródłaBorowiecka-Jamrozek, J., i J. Lachowski. "Diffusion of Boron in Cobalt Sinters". Archives of Metallurgy and Materials 58, nr 4 (1.12.2013): 1131–36. http://dx.doi.org/10.2478/amm-2013-0137.
Pełny tekst źródłaAtabaev, I. G., Chin Che Tin, B. G. Atabaev, T. M. Saliev, E. N. Bakhranov, N. A. Matchanov, S. L. Lutpullaev i in. "Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC". Materials Science Forum 600-603 (wrzesień 2008): 457–60. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.457.
Pełny tekst źródłaShevchuk, E. P., V. A. Plotnikov i G. S. Bektasova. "Boron Diffusion in Steel 20". Izvestiya of Altai State University, nr 1(111) (6.03.2020): 58–62. http://dx.doi.org/10.14258/izvasu(2020)1-08.
Pełny tekst źródłaVenezia, V. C., R. Duffy, L. Pelaz, M. J. P. Hopstaken, G. C. J. Maas, T. Dao, Y. Tamminga i P. Graat. "Boron diffusion in amorphous silicon". Materials Science and Engineering: B 124-125 (grudzień 2005): 245–48. http://dx.doi.org/10.1016/j.mseb.2005.08.079.
Pełny tekst źródłaLa Via, F., K. T. F. Janssen i A. H. Reader. "Boron diffusion in Co74Ti26amorphous alloy". Applied Physics Letters 60, nr 6 (10.02.1992): 701–3. http://dx.doi.org/10.1063/1.106542.
Pełny tekst źródłaRozprawy doktorskie na temat "Boron diffusion"
Vianez, Basilio Frasco. "Aspects of boron diffusion through hardwoods". Thesis, Bangor University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358298.
Pełny tekst źródłaJacques, Jeannette. "Boron diffusion within amorphous silicon materials". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0012805.
Pełny tekst źródłaCastro, Susana Patricia. "CHARACTERIZATION OF THE BORON DOPING PROCESSUSING BORON NITRIDE SOLID SOURCE DIFFUSION". NCSU, 1999. http://www.lib.ncsu.edu/theses/available/etd-19990523-142337.
Pełny tekst źródłaCASTRO, SUSANA PATRICIA. Characterization of the Boron Doping Process UsingBoron Nitride Solid Source DiffusionThe purpose of this research has been to develop an optimum process for the borondoping of implants and polysilicon gates of metal-oxide-semiconductor (MOS) devices.An experimental design was constructed to determine the effects of diffusiontemperature, time, and ambient on characteristics of the doping process. A temperaturerange of 800 to 1000 degrees Celsius was studied with a diffusion time between 10 and60 minutes. Two diffusion ambients were used for doping processes, a pure nitrogenambient and a nitrogen-oxygen gaseous mixture. Device wafers were fabricated, and thetesting of MOS capacitors and van der Pauw test structures was performed to determinethe effect of diffusion conditions on flatband voltage and poly gate doping. Materialscharacterization techniques were used on monitor wafers for each diffusion process todetermine the wafer structure formed for each process and evaluate the effectiveness ofthe deglaze etch. The processes that resulted in the best device characteristics withoutsuffering from significant poly depletion effects and flatband voltage shifts were wafersdoped at 800 degrees Celsius in a pure nitrogen atmosphere for 20 minutes and 45minutes. The presence of oxygen in the atmosphere caused the depletion of boron fromthe Si wafer surface. The formation of the Si-B phase only occurred on devices processedat 1000 degrees Celsius. The deglaze process used in this experiment did not fullyremove this layer, and thus all devices doped at this temperature were seriously degraded.
Slade, Alexander Mason Electrical Engineering UNSW. "Boron tribromide sourced boron diffusions for silicon solar cells". Awarded by:University of New South Wales. Electrical Engineering, 2005. http://handle.unsw.edu.au/1959.4/21850.
Pełny tekst źródłaCastro, Susana Patricia. "Characterization of the boron doping process using boron nitride solid source diffusion". Raleigh, NC : North Carolina State University, 1999. http://www.lib.ncsu.edu/etd/public/etd-2923142349901421/etd.pdf.
Pełny tekst źródłaDe, Oliveira Valmir Souza. "Mechanisms of diffusion of boron through wood". Thesis, Bangor University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235647.
Pełny tekst źródłaUppal, Suresh. "Diffusion of boron and silicon in germanium". Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417592.
Pełny tekst źródłaBerggren, Elin. "Diffusion of Lithium in Boron-doped Diamond Thin Films". Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-413090.
Pełny tekst źródłaGolshani, Fariborz. "Boron doping of diamond powder by enhanced diffusion and forced diffusion : diffusion concentrations, mechanical, chemical and optical properties /". free to MU campus, to others for purchase, 1997. http://wwwlib.umi.com/cr/mo/fullcit?p9842530.
Pełny tekst źródłaTiwari, Gyanendra P., Ratikanta Mishra i Radhey Shyam Mehrotra. "Helium migration and precipitation in irradiated and annealed copper boron alloy". Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-184131.
Pełny tekst źródłaKsiążki na temat "Boron diffusion"
Williams, Lonnie H. Integrated protection against lyctid beetle infestations: Part II laboratory dip-diffusion treatment of unseasoned banak (Virola spp.) lumber with boron compounds. New Orleans, La: U.S. Dept. of Agriculture, Forest Service, Southern Forest Experiment Station, 1985.
Znajdź pełny tekst źródłaWilliams, Lonnie H. Integrated protection against lyctid beetle infestations: Part II laboratory dip-diffusion treatment of unseasoned banak (Virola spp.) lumber with boron compounds. New Orleans, La: U.S. Dept. of Agriculture, Forest Service, Southern Forest Experiment Station, 1985.
Znajdź pełny tekst źródłaAndrzej, Pękalski, red. Diffusion processes: Experiment, theory, simulations : proceedings of the Vth Max Born Symposium, held at Kudowa, Poland, 1-4 June 1994. Berlin: Springer-Verlag, 1994.
Znajdź pełny tekst źródłaMax, Born Symposium (11th 1998 Warsaw Poland). Anomalous diffusion: From basics to applications : proceedings of the XIth Max Born Symposium held at Warsaw, Poland, 20-27 May, 1998. Berlin: Springer, 1999.
Znajdź pełny tekst źródłaCorsi, Daniele, i Cèlia Nadal Pasqual. Studi Iberici. Dialoghi dall’Italia. Venice: Fondazione Università Ca’ Foscari, 2021. http://dx.doi.org/10.30687/978-88-6969-505-6.
Pełny tekst źródłaBerridge, D. Boron Diffusion: A Feasibility Study for the Diffusion of Boron from Boron Tribromide. AEA Technology Plc, 1986.
Znajdź pełny tekst źródłaEstablishment, Building Research, red. Preservation of building timbers by boron diffusion. Watford: Building Research Establishment, 1994.
Znajdź pełny tekst źródłaPekalski, Andrzej. Diffusion Processes : Experiment, Theory, Simulations: Proceedings of the Vth Max Born Symposium Held at Kudowa, Poland, 1-4 June 1994. Springer, 2014.
Znajdź pełny tekst źródłaCollé-Bak, Nathalie. Wayfaring Images. Redaktorzy Michael Davies i W. R. Owens. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780199581306.013.33.
Pełny tekst źródłaPekalski, Andrzej. Diffusion Processes: Experiment, Theory, Simulations : Proceedings of the Vth Max Born Symposium, Held at Kudowa, Poland, 1-4 June 1994 (Lecture Notes in Physics). Springer-Verlag, 1994.
Znajdź pełny tekst źródłaCzęści książek na temat "Boron diffusion"
Wang, C. C., T. Y. Huang, Y. M. Sheu, Ray Duffy, Anco Heringa, N. E. B. Cowern, Peter B. Griffin i Carlos H. Diaz. "Boron Diffusion in Strained and Strain-Relaxed SiGe". W Simulation of Semiconductor Processes and Devices 2004, 41–44. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_10.
Pełny tekst źródłaDybkov, V. I. "Diffusional Growth Kinetics of Boride Layers at the 13% Cr Steel Interface with Amorphous Boron". W Defect and Diffusion Forum, 183–88. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.183.
Pełny tekst źródłaYang, Le, Jing Yang, Xin Fang, Yang Shi, Jingxiao Wang, Qinghao Ye, Jianhua Huang, Xiang Li i Chunjian Wu. "Boron Diffusion of the Silicon Solar Cell with BBr3". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1148–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_227.
Pełny tekst źródłaBockstedte, M., Alexander Mattausch i Oleg Pankratov. "Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC". W Materials Science Forum, 527–30. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.527.
Pełny tekst źródłaHeinz, Paul, Andreas Volek, Robert F. Singer, Markus Dinkel, Florian Pyczak, Matthias Göken, Michael Ott, Ernst Affeldt i Andreas Vossberg. "Diffusion Brazing of Single Crystalline Nickel Base Superalloys Using Boron Free Nickel Base Braze Alloys". W Diffusion in Solids and Liquids III, 294–99. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-51-5.294.
Pełny tekst źródłaHöfler, Alexander, Thomas Feudel, Arno Liegmann, Norbert Strecker, Wolfgang Fichtner, Yuji Kataoka, Kunihiro Suzuki i Nobuo Sasaki. "Precipitation phenomena and transient diffusion/activation during high concentration boron annealing". W Simulation of Semiconductor Devices and Processes, 448–51. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_108.
Pełny tekst źródłaShauly, Eitan N., Richard Ghez i Yigal Komem. "Two-Dimensional Diffusion Characterization of Boron in Silicon using Reverse Modeling". W Simulation of Semiconductor Processes and Devices 2001, 384–87. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_88.
Pełny tekst źródłaRadamson, H. H., i J. Hållstedt. "Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition". W Defect and Diffusion Forum, 39–50. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-16-7.39.
Pełny tekst źródłaMoynagh, P. B., i P. J. Rosser. "Quantification of Diffusion Mechanisms of Boron, Phosphorus, Arsenic, and Antimony in Silicon". W ESSDERC ’89, 291–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_61.
Pełny tekst źródłaBaccus, B., i E. Vandenbossche. "Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions". W Simulation of Semiconductor Devices and Processes, 133–36. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_32.
Pełny tekst źródłaStreszczenia konferencji na temat "Boron diffusion"
Zin, Ngwe, i Andrew Blakers. "Boron diffusion induced shunts". W 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6185871.
Pełny tekst źródłaEdelman, L. A., K. S. Jones, R. G. Elliman, L. M. Rubin, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain i Yevgeniy V. Kondratenko. "Boron Diffusion in Amorphous Germanium". W ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033598.
Pełny tekst źródłaSmith, Gregory S., William A. Hamilton, Michael R. Fitzsimmons, Shenda M. Baker, Kevin M. Hubbard, Michael Nastasi, Juhani P. Hirvonen i Thomas G. Zocco. "Neutron reflectometry study of thermally induced boron diffusion in amorphous elemental boron". W San Diego '92, redaktorzy Charles F. Majkrzak i James L. Wood. SPIE, 1992. http://dx.doi.org/10.1117/12.130635.
Pełny tekst źródłaVacik, J., V. Hnatowicz, J. Cervena, S. Posta, U. Köster, G. Pasold, Floyd D. McDaniel i Barney L. Doyle. "On Boron Diffusion in MgF[sub 2]". W APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twentieth International Conference. AIP, 2009. http://dx.doi.org/10.1063/1.3120169.
Pełny tekst źródłaAoyama, Takayuki, Hiroshi Arimoto i Kei Horiuchi. "Boron Diffusion in SiO2 Involving High-Concentration Effects". W 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.a-5-8.
Pełny tekst źródłaMauri, Aurelio, Luca Laurin, Francesco Montalenti i Augusto Benvenuti. "Atomistic approach for Boron Transient Enhanced Diffusion and clustering". W 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008). IEEE, 2008. http://dx.doi.org/10.1109/sispad.2008.4648304.
Pełny tekst źródłaAstorga, Elena Navarrete, Efrain Ochoa Martinez i Jose R. Ramos Barrado. "Low cost spray-coating boron diffusion on n-type silicon". W 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481408.
Pełny tekst źródłaHong-Jyh Li, Hong-Jyh Li, T. A. Kirichenko, P. Kohli, S. K. Banerjee, E. Graetz, R. Tichy i P. Zeitzoff. "Boron retarded diffusion in the presence of indium or germanium". W Proceedings of the 2002 14th International Conference on Ion Implantation Technology. IEEE, 2002. http://dx.doi.org/10.1109/iit.2002.1257929.
Pełny tekst źródłaDinkel, M. K., P. Heinz, F. Pyczak, A. Volek, M. Ott, E. Affeldt, A. Vossberg, M. G�ken i R. F. Singer. "New Boron and Silicon Free Single Crystal-Diffusion Brazing Alloys". W Superalloys. TMS, 2008. http://dx.doi.org/10.7449/2008/superalloys_2008_211_220.
Pełny tekst źródłaMin Yu, Xiao Zhang, Liming Ren, Huihui Ji, Kai Zhan, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang i H. Oka. "Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model". W 2006 International Workshop on Junction Technology. IEEE, 2006. http://dx.doi.org/10.1109/iwjt.2006.220855.
Pełny tekst źródłaRaporty organizacyjne na temat "Boron diffusion"
Agarwal, A., D. J. Eaglesham, H. J. Gossmann, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes i Y. E. Erokhin. Boron-enhanced diffusion of boron from ultralow-energy boron implantation. Office of Scientific and Technical Information (OSTI), maj 1998. http://dx.doi.org/10.2172/650277.
Pełny tekst źródłaChou, Y. T. Grain boundary diffusion in oriented Ni sub 3 Al bicrystals containing boron. Office of Scientific and Technical Information (OSTI), grudzień 1990. http://dx.doi.org/10.2172/5879343.
Pełny tekst źródłaChou, Y. T. Grain boundary diffusion in oriented Ni{sub 3}Al bicrystals containing boron. Final technical report, September 1, 1986--August 31, 1990. Office of Scientific and Technical Information (OSTI), grudzień 1990. http://dx.doi.org/10.2172/10125642.
Pełny tekst źródłaWilliams, Lonnie H., i Joe K. Mauldin. Integrated Protection Against Lyctid Beetle Infestations Part II. - Laboratory Dip-Diffusion Treatment of Unseasoned Banak (Virola spp.) Lumber with Boron Compounds. New Orleans, LA: U.S. Department of Agriculture, Forest Service, Southern Forest Experiment Station, 1985. http://dx.doi.org/10.2737/so-rn-313.
Pełny tekst źródła