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Gotowa bibliografia na temat „BAND GAP REFERENCE CIRCUITS”

Autor: Grafiati

Data publikacji: 11 września 2023

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Artykuły w czasopismach na temat "BAND GAP REFERENCE CIRCUITS"

AZAROV, Oleksiy, i Anna FIGAS. "THERMOSTABLE REFERENCE CURRENT AND VOLTAGE SOURCES FOR HIGH-LINEAR ANALOGUE-CODE-ANALOGUE SYSTEM". Herald of Khmelnytskyi National University. Technical sciences 311, nr 4 (sierpień 2022): 23–28. http://dx.doi.org/10.31891/2307-5732-2022-311-4-23-28.

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DC sources and reference voltage sources are widely used in various electronic devices: analog-to-digital and digital-to-analog converters, DC amplifiers, sample-and-hold devices, stabilized voltage sources, and others. At the same time, the accuracy and temperature characteristics of the latter largely depend on the same characteristics of direct current and voltage sources, which are subject to stringent requirements. There are quite a lot of different approaches to the construction of reference voltage and current source circuits with thermal compensation. The most famous of them – with the use of thermally compensated zener diodes operating in reverse breakdown mode. However, devices based on them have a high power consumption and low efficiency and a high level of noise, and it is difficult to implement temperature drift compensation due to a wide spread of temperature characteristics. The so-called bandgap circuits are also widely used – transistor reference voltage sources, the value of the reference voltage of which is determined by the band gap of the semiconductor. The most famous of them are Vidlar’s bandgaps and Brokau’s bandgaps. The specificity of all bandgap circuits is the rigid binding of the output voltage to the band gap of the semiconductor. The article proposes an alternative approach to the construction of direct current and voltage sources, which consists in the use of circuits of two-pole direct current sources. A new approach to the construction of thermally stable reference current sources based on bipolar transistors using the band gap voltage of a semiconductor and current mirrors is proposed. The principles of operation of the circuits are described and the possibility of achieving thermal compensation is proved. Computer modelling of the static characteristics of the proposed reference current sources, in particular, the temperature drift of the currents, has been carried out. A new approach to the construction of thermally stable reference voltage sources based on bipolar transistors with the use of thermally stable reference current generators is proposed. Analytical expressions are obtained that describe operation of circuits of reference voltage sources according to the proposed approach. A method for increasing the loading capacity of these reference voltage sources is proposed.

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Zhang, Wei Juan, Yan Zhao, Ju Wang i Kun Li. "A Band-Gap Voltage Reference for LDO Circuit". Applied Mechanics and Materials 599-601 (sierpień 2014): 626–30. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.626.

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A band-gap voltage reference applicable for LDO circuit was designed. The band-gap voltage reference with lower change rate and low temperature-drift and high PSRR was acquired, which uses the two stage operational amplifier as the input terminal, and the miller compensation circuit was adopted in order to improve the stability of the voltage reference circuit. The circuit was simulated with Cadence tool and 0.5μm CMOS model. The results show that the reference voltage is 1.2182V, the PSRR of band-gap voltage reference is-76.8dB. The measured results indicated that the designed band-gap voltage reference is prospective for application in LDO circuit.

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Grella, K., S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt i U. Paschen. "High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology". Journal of Microelectronics and Electronic Packaging 10, nr 2 (1.04.2013): 67–72. http://dx.doi.org/10.4071/imaps.374.

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Standard bulk CMOS technology targets operating temperatures of not more than 175°C. Silicon-on-insulator technologies are commonly used up to 250°C. In this work, we evaluate the limit for electronic circuit function realized in thin film SOI technologies for even higher temperatures. At Fraunhofer IMS, a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metallization with excellent reliability concerning electromigration, as well as voltage-independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of an NMOSFET transistor and a PMOSFET transistor are studied up to 450°C. In a second step, we investigate the functionality of a ring oscillator (representing a digital circuit) and a band gap reference as an example of a simple analog component. The frequency and the current consumption of the ring oscillator, as well as the output voltage and the current of the band gap reference, are characterized up to 450°C. We find that the ring oscillator still oscillates at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the band gap reference is in the specified range (change < 3%) up to 250°C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS technology to its real maximum temperature limits.

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Marani, R., i A. G. Perri. "Review—Thermal Effects in the Design of CNTFET-Based Digital Circuits". ECS Journal of Solid State Science and Technology 11, nr 4 (1.04.2022): 041006. http://dx.doi.org/10.1149/2162-8777/ac63e6.

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In this paper we review a method to analyse the thermal effects in the design of CNTFET-based digital circuits, enhancing a compact model, already proposed by us, in which the temperature variation in the drain current equation and in energy band gap is considered. At first the impact of temperature variations on design parameters of CNTFET is shown, with particular reference to the output and trans-characteristics, the output resistance, the transconductance. Then, using ADS software, the effects of temperature variations in the design of some digital circuits, are illustrated and widely discussed, emphasizing that the reviewed procedure can easily be applied to any other circuit based on CNTFET.

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Li, Zheng Da, i Lin Xie. "One Kind of Band-Gap Voltage Reference Source with Piecewise High-Order Temperature Compensation and Power Supply Rejection Ratio". Applied Mechanics and Materials 644-650 (wrzesień 2014): 3575–78. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3575.

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This paper designed a new band-gap voltage reference circuit with two-stage temperature compensation.It realizes non-linear temperature compensation by using NMOS-pipe leakage current and increases the power supply rejection ratio of the band-gap voltage reference source by introducing negative feedback between the operational amplifier and the power supply. What is more, the paper simulates the band-gap voltage reference source based on CSMC 0.5μm CMOS technique. The result as follow: the band-gap voltage reference source has the temperature coefficient of 8.2ppm/oC among-40-120oC with the supply voltage of 3V, the low-frequency power supply rejection ratio is 83dBat 27oC and the power supply rejection ratio is 71dB in 1KHz, the output voltage regulation is 1.05mV/V in the supply voltage range from 2.4V to 5V.

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Shrivastava, Amandeep, R. S. Gamad i R. C. Gurjar. "Design of Improved Band Gap Reference Circuit for CS-VCO Application Using 180nm CMOS Technology". IOP Conference Series: Materials Science and Engineering 1272, nr 1 (1.12.2022): 012009. http://dx.doi.org/10.1088/1757-899x/1272/1/012009.

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Electronics engineers are currently faced with the task of designing linear and broad scale voltage regulated oscillator for analogue and a varied signal applications for a shorter design period of time. The Band gap reference source is used here to compensate the noise which affects the Phase lock loop operation from power supplied noise. A cascode current mirror based band gap reference current starved voltage controlled Oscillator (BG-CSVCO) is discussed in detailed as a new design strategy for reducing power supplied noise in Phase lock loop (PLL) applications. A cascode current mirror based band gap reference CS-VCO design is simulated and direct employing in 180nm Cadence CMOS technology. A frequency range of band gap reference CS-VCO is 0.009 GHz up to the 2.07 GHz for adjusting range of 0.5V to 1.8V with the power dissipation is 0.564mW. The VDD as supplied voltage was 1.8volt.

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Liang, Chao-Jui, Chiu-Chiao Chung i Hongchin Lin. "A low-voltage band-gap reference circuit with second-order analyses". International Journal of Circuit Theory and Applications 39, nr 12 (12.07.2010): 1247–56. http://dx.doi.org/10.1002/cta.699.

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Li, Fan, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen i Wen Liu. "Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics". Applied Sciences 11, nr 24 (17.12.2021): 12057. http://dx.doi.org/10.3390/app112412057.

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Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design if monolithic integration is desired. This article analyzes the schematics of a GaN-based comparator, and three comparator structures are compared through ADS simulation. The optimal structure with the bootstrapped technique is fabricated based on AlGaN/GaN Metal–Insulator–Semiconductor (MIS) HEMT with the recessed gate method. The comparator has excellent static characteristics when the reference voltage increases from 3 V to 8 V. Dynamic waveforms from 10 kHz to 1 MHz are also obtained. High-temperature tests from 25 °C to 250 °C are applied upon both DC and AC characteristics. The mechanisms of instability issues are explained under dynamic working condition. The results prove that the comparator can be used in the state-of-art mixed-signal circuits, demonstrating the potential for the monolithic all-GaN integrated circuits.

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Ma, Bill, i Feng Qi Yu. "A 1.2-V 1.76-Ppm/°C Low Voltage CMOS Band-Gap Reference". Applied Mechanics and Materials 303-306 (luty 2013): 1798–802. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1798.

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This paper proposes an innovative CMOS band-gap reference (BGR) topology with a curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism is analyzed thoroughly and the corresponding BGR circuit has been implemented in standard CMOS 0.18u technology. The proposed BGR achieves 1.76 ppm/°C in the range of -40°C to 120°C at 1.2V supply voltage. In addition, it consumes only 30uA current.

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Han, Yifeng, Mingjing Zhai i Junfeng Zhou. "A thermal protection module for automotive integrated circuits". Modern Physics Letters B 31, nr 19-21 (27.07.2017): 1740097. http://dx.doi.org/10.1142/s0217984917400978.

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Automotive ICs work in wide ambient temperature range up to 150[Formula: see text]C. It is important to design an over temperature protection mechanism for the reliability of ICs and systems. A thermal protection module for the automotive ICs is reported in this paper. Dual channel detection and decision scheme was designed based on band gap voltage reference. Precision thermal protection point was set by serial resistors and the variations of power supply, temperature and the process were removed by the resistor ratio. The thermal protection module was implemented in CSMC 0.5 [Formula: see text] 60 V BCD process, incorporated in a CAN transceiver chip. The area of the module was about 0.02 mm2 and thus it was very compact and low cost to integrate in chips. The performance of the thermal protection parameters was measured in incubators. The thermal shutdown temperature was about 164.4[Formula: see text]C and the thermal recovery temperature was about 153[Formula: see text]C with hysteresis temperature of 10 K. Additionally, the thermal protection module showed good consistency with different chips.

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Rozprawy doktorskie na temat "BAND GAP REFERENCE CIRCUITS"

Bubla, Jiří. "Band Gap - přesná napěťová reference". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-217808.

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This diploma thesis is specialized on a design of a high accuracy voltage reference Bandgap. A very low temperature coefficient and output voltage approx. 1,205V are the main features of this circuit. The paper contains a derivation of the Bandgap principle, examples of realizations of the circuits and methods of compensation temperature dependence and manufacture process, design of Brokaw and Gilbert reference, design of a testchip and measurement results.

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Kenyon, Eleazar Walter. "Low-noise circuitry for extreme environment detection systems implemented in SiGe BiCMOS technology". Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44873.

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This work evaluates two SiGe BiCMOS technology platforms as candidates for implementing extreme environment capable circuitry, with an emphasis on applications requiring high sensitivity and low noise. In Chapter 1, applications requiring extreme environment sensing circuitry are briefly reviewed and the motivation for undertaking this study is outlined. A case is then presented for the use of SiGe BiCMOS technology to meet this need, documenting the benefits of operating SiGe HBTs at cryogenic temperatures. Chapter 1 concludes with a brief description of device radiation effects in bipolar and CMOS devices, and a basic overview of noise in semiconductor devices and electronic components. Chapter 2 further elaborates on a specific application requiring low-noise circuitry capable of operating at cryogenic temperatures and proposes a number of variants of band-gap reference circuits for use in said system. Detailed simulation and theoretical analysis of the proposed circuits are presented and compared with measurements, validating the techniques used in the proposed designs and emphasizing the need for further understanding of device level low-temperature noise phenomena. Chapter 3 evaluates the feasibility of using a SiGe BiCMOS process, whose response to ionizing radiation was previously uncharacterized, for use in unshielded electronic systems needed for exploration of deep space planets or moons, specifically targeting Europa mission requirements. Measured total ionizing dose (TID) responses for both CMOS and bipolar SiGe devices are presented and compared to similar technologies. The mechanisms responsible for device degradation are outlined, and an explanation of unexpected results is proposed. Finally, Chapter 4 summarizes the work presented and understanding provided by this thesis, concluding by outlining future research needed to build upon this study and fully realize SiGe based extreme environment capable precision electronic systems.

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Kadaňka, Petr. "Návrh nízkošumové Band Gap reference v BCD procesu". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2013. http://www.nusl.cz/ntk/nusl-220280.

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This diploma thesis focuses on noise analysis of different integrated circuits used for generating temperature stable reference voltage. All noise contributions are studied separately and there is shown a way of their minimization. Circuit using external capacitor with pre-charging system is chosen as the best solution. Output noise of all analyzed circuits is compared and characteristics of final band-gap reference are summarized at the end of the work.

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Kim, Tae Hong. "Electromagnetic Band Gap (EBG) synthesis and its application in analog-to-digital converter load boards". Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/22712.

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With increase in frequency and convergence toward mixed signal systems, supplying stable voltages to integrated circuits and blocking noise coupling in the systems are major problems. Electromagnetic band gap (EBG) structures have been in the limelight for power/ground noise isolation in mixed signal applications due to their capability to suppress unwanted electromagnetic mode transmission in certain frequency bands. The EBG structures have proven effective in isolating the power/ground noise in systems that use a common power supply. However, while the EBG structures have the potential to present many advantages in noise suppression applications, there is no method in the prior art that enables reliable and efficient synthesis of these EBG structures. Therefore, in this research, a novel EBG synthesis method for mixed signal applications is presented. For one-dimensional periodic structures, three new approaches such as current path approximation method, border to border radius, power loss method have been introduced and combined for synthesis. For two-dimensional EBG structures, a novel EBG synthesis method using genetic algorithm (GA) has been presented. In this method, genetic algorithm (GA) is utilized as a solution-searching technique. Synthesis procedure has been automated by combining GA with multilayer finite-difference method and dispersion diagram analysis method. As a real application for EBG structures, EBG structures have been applied to a GHz ADC load board design for power/ground noise suppression.

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Burress, Thomas Weston. "Mitigation of random and deterministic noise in mixed signal systems with examples in frequency synthesizer systems". Thesis, Kansas State University, 2011. http://hdl.handle.net/2097/13537.

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Master of Science
Department of Electrical and Computer Engineering
William B. Kuhn
RF frequency synthesizer systems are prevalent in today’s electronics. In a synthesizer there is a sensitive analog oscillator that may be affected by two different types of noise. The first is random noise injection from active devices. This results in phase noise in the synthesizer’s spectrum. The second noise source is deterministic. A digital frequency divider with high-amplitude switching is an example of such a deterministic source. This noise enters the system through various forms of electric or magnetic field coupling and manifests itself as spurs or pulling. Both forms of noise can adversely affect system performance. We will first summarize methods for reducing noise. These already known steps have to do with layout techniques, device geometry, and general synthesizer topologies. Then we will show ways to isolate noisy interfering circuits from the sensitive analog systems. Finally, we present some considerations for reducing the effects of random noise. A power supply filter can improve the effects of deterministic noise such as undesired signals on the supply line. We show several ways to improve the rejection of high frequency supply noise (characterized by the power supply rejection ratio or PSRR) through the design of a voltage regulator. The emphasis is on new techniques for obtaining good PSRR at S-band frequencies and above. To validate the techniques, we designed a regulator in Peregrine Semiconductor’s .25µm ULTRA CMOS Silicon on Sapphire process. It produces a 2.5V output with an input ranging from 2.6V to 5V and has a maximum current sourcing of 70mA. The regulator’s low drop out performance is 60mV with no load and it achieves a power supply ripple reduction of 29.8 dB at 500 MHz. To address random noise in synthesizers, the thesis provides preliminary investigation of an oscillator topology change that has been proposed in the literature. This proposed change reduces the phase noise of the oscillator within the overall system. A differential cross-coupled design is the usual topology of choice, but it is not optimal for noise performance. We investigate current noise injection in the traditional design and present an updated design that uses a differential Colpitts oscillator as an alternative to classic cross-coupled designs.

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Brito, Davi Bibiano. "Metamaterial inspired improved antennas and circuits". Universidade Federal do Rio Grande do Norte, 2010. http://repositorio.ufrn.br:8080/jspui/handle/123456789/15152.

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Made available in DSpace on 2014-12-17T14:54:58Z (GMT). No. of bitstreams: 1 DaviBB_DISSERT_1-70.pdf: 4567680 bytes, checksum: 150ff5afc1806ca374278b4c00a1f5a3 (MD5) Previous issue date: 2010-12-06
Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior
Metamaterials exhibiting negative refraction have attracted a great amount of attention in recent years mostly due to their exquisite electromagnetic properties. These materials are artificial structures that exhibit characteristics not found in nature. It is possible to obtain a metamaterial by combining artificial structures periodically. We investigated the unique properties of Split Ring Resonators, High impedance Surfaces and Frequency Selective Surfaces and composite metamaterials. We have successfully demonstrated the practical use of these structures in antennas and circuits. We experimentally confirmed that composite metamaterial can improve the performance of the structures considered in this thesis, at the frequencies where electromagnetic band gap transmission takes place

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Huh, Suzanne Lynn. "Design of power delivery networks for noise suppression and isolation using power transmission lines". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42842.

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In conventional design of power delivery networks (PDNs), the PDN impedance is required to be less than the target impedance over the frequency range of interest to minimize the IR drop and to suppress the inductive noise during data transitions. As a result, most PDNs in high-speed systems consist of power and ground planes to provide a low-impedance path between the voltage regulator module (VRM) and the integrated circuit (IC) on the printed circuit board (PCB). For off-chip signaling, charging and discharging signal transmission lines induce return currents on the power and ground planes. The return current always follows the path of least impedance on the reference plane closest to the signal transmission line. The return current path plays a critical role in maintaining the signal integrity of the bits propagating on the signal transmission lines. The problem is that the disruption between the power and ground planes induces return path discontinuities (RPDs), which create displacement current sources between the power and ground planes. The current sources excite the plane cavity and cause voltage fluctuations. These fluctuations are proportional to the plane impedance since the current is drawn through the PDN by the driver. Therefore, low PDN impedance is required for power supply noise reduction. Alternatively, methods of preventing RPDs can be used to suppress power supply noise. Using a power transmission line (PTL) eliminates the discontinuity between the power and ground planes, thereby preventing the RPD effects. In this approach, transmission lines replace the power plane for conveying power from the VRM to each IC on the PCB. The PTL-based PDN enables both power and signal transmission lines to be referenced to the same ground plane so that a continuous current path can be formed, unlike the power-plane-based PDN. As a result, a closed current loop is achieved, and the voltage fluctuation caused by RPDs is removed in idealistic situations. Without the RPD-related voltage fluctuation, reducing the PDN impedance is not as critical as in the power-plane-based approach. Instead, the impedance of the PTL is determined by the impedance of the signaling circuits. To use the PTL-based PDN in a practical signaling environment, several issues need to be solved. First, the dc drop coming from the source termination of the PTL needs to be addressed. The driver being turned on and off dictates the current flow through the PTL, causing the dc drop to be dynamic, which depends on the data pattern. Second, impedance mismatch between the PTL and termination can occur due to manufacturing variations. Third, an increase in the number of PCB traces should be addressed by devising a method to feed more than one driver with one PTL. Lastly, the power required to transmit 1 bit of data should be optimized for the PTL by using a new signaling scheme and adjusting the impedance of the signaling circuit. Constant flow of current through the PDN is one solution proposed to address the first two issues. Constant current removes the dynamic characteristics of the dc drop by inducing a fixed amount of dc drop over the PTL. Moreover, constant current keeps the PTL fully charged at all times, and thereby eliminates the process of repeatedly charging and discharging the power transmission line. The constant current PTL (CCPTL) scheme maintains constant current flow regardless of the input data pattern. Early results on the CCPTL scheme have been discussed along with the measurements. The CCPTL scheme severs the link between the current flowing through the PTL and the output data of the I/O driver connected to it. Also, it eliminates the charging and discharging process of the PTL, thereby completely eliminating power supply noise in idealistic situations. To reduce any associated power penalty, a pseudo-balanced PTL (PBPTL) scheme is also proposed using the PTL concept. A pseudo-balanced (PB) signaling scheme, which uses an encoding technique to map N-bit data onto M-bit encoded data with fixed number of 1s and 0s, is applied. When the PB signaling scheme is combined with the PTL, the jitter performance improves significantly as compared to currently practiced design approach.

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Sankaran, Nithya. "Electromagnetic coupling in multilayer thin-film organic packages with chip-last embedded actives". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/43621.

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The demands of consumer electronic products to support multi-functionality such as computing, communication and multimedia applications with reduced form factor and low cost is the driving force behind packaging technologies such as System on Package (SOP). SOP aims to enhance the functionality of the package while providing form factor reduction by the integration of active and passive components. However, embedding components within mixed signal packages causes unwanted interferences across the digital and analog-radio frequency (RF) sections of the package, which is a major challenge yet to be addressed. This dissertation focused on the chip-last method of embedding chips within cavities in organic packages and addressed the challenges for preserving power integrity in such packages. The challenges associated with electromagnetic coupling in packages when chips are embedded within the substrate layers are identified, analyzed and demonstrated. The presence of the chip embedded within the package introduces new interaction mechanisms between the chip and package that have not been encountered in conventional packages with surface mounted chips. It is of significant importance to understand the chip-package interaction mechanisms, for ensuring satisfactory design of systems with embedded actives. The influence of the electromagnetic coupling from the package on the bulk substrate and bond-pads of the embedded chip are demonstrated. Solutions that remedy the noise coupling using Electromagnetic Band-Gap structures (EBGs) along with design methodologies for their efficient implementation in multilayer packages are proposed. This dissertation presents guidelines for designing efficient power distribution networks in multilayer packages with embedded chips.

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MITTAL, VIVEK. "DESIGN AND ANALYSIS OF BAND GAP REFERENCE CIRCUITS". Thesis, 2018. http://dspace.dtu.ac.in:8080/jspui/handle/repository/16508.

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Band Gap Reference circuits are integral part of Analog Integrated Circuits. Their function is to provide a constant reference voltage independent of temperature and supply variations. Two major building blocks of band gap reference circuits are CTAT (Complementary to absolute temperature) and PTAT (Proportional to absolute temperature). The important characteristics of CTAT circuits is the inverse relationship of their output voltage with temperature while the PTAT circuits have proportional dependence. By combining the circuits exhibiting the CTAT and PTAT nature, a constant dependence of voltage on temperature can be achieved which can be used as reference voltage for other analog circuits. Design of CTAT and PTAT circuits and their simulation using the Cadence Design Systems Software have been presented in this dissertation.

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Chang, Wuchang, i 張武昌. "Design of low-power band-gap voltage reference circuits for low supply voltages". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/63027796637562889403.

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碩士
國立中興大學
電機工程學系
90
Reference voltage generators are widely used in many applications from analog circuit to mixed-signal circuits such as ADC, DAC, DRAM and flash memories. These structures are required to provide a stable voltage reference with a low sensitivity to temperature and supply voltage. One of the most popular architecture is the band-gap reference (BGR). Due to the need of battery-operated systems for portability, low supply voltages and low power consumption will be the trends in future VLSI products. Two new band-gap reference (BGR) circuits operated at low supply voltages using 0.6mm CMOS technology are presented in this thesis. The chip area of the new BGR circuit is small. The operation voltage can be down to 1.2V, while the reference voltage (Vref) can be set to almost any values. The deviation of Vref is less than 18ppm/ o C for the temperature range from -40°C to 125°C. In order to reduce the current consumption, we propose to use switches to control the BGR circuit connected or disconnected with power supplies. When the system is in power-saving mode, the BGR circuit is disconnected from power supplies to reduce the current consumption.

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Książki na temat "BAND GAP REFERENCE CIRCUITS"

Advanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.

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Części książek na temat "BAND GAP REFERENCE CIRCUITS"

Xu, Wendan, Donglai Xu i Ian French. "An Improved Band-Gap Voltage Reference Circuit Design for Multimedia VLSI Systems Integration Applications". W Lecture Notes in Computer Science, 878–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-25969-5_81.

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Liu, Ai Qun. "Tunable Electromagnetic Band Gap Bandstop Filter". W RF MEMS Switches and Integrated Switching Circuits, 133–58. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-0-387-46262-2_6.

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Casady, Jeffrey B. "Processing of Silicon Carbide for Devices and Circuits". W Processing of Wide Band Gap Semiconductors, 178–249. Elsevier, 2000. http://dx.doi.org/10.1016/b978-081551439-8.50007-9.

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Bässler, H. "Excitonic Model versus Band Gap Model in Organic Materials". W Reference Module in Materials Science and Materials Engineering. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-803581-8.03214-8.

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Ali, Mir S., Monalisa Adhikari, Jonathan T. Orasugh i Dipankar Chattopadhyay. "Synthesis and Photovoltaic Properties of Low Band Gap Polymer". W Reference Module in Materials Science and Materials Engineering. Elsevier, 2022. http://dx.doi.org/10.1016/b978-0-12-820352-1.00264-9.

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Mukherjee, Moumita. "Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity". W Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems. InTech, 2010. http://dx.doi.org/10.5772/8751.

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Crisci, Teresa, Luigi Moretti, Mariano Gioffrè i Maurizio Casalino. "Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials". W Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99625.

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Streszczenie:

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.

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Streszczenia konferencji na temat "BAND GAP REFERENCE CIRCUITS"

Li, Da-Gang, Yuan-Jun Cen, Ping Yang, Yong-Kai Li, Xu Qi i Zhi-Kai Liao. "The Design of Low Temperature Coefficient Band-Gap Reference". W 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM). IEEE, 2018. http://dx.doi.org/10.1109/icam.2018.8596482.

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Jahangir, Mohd Ziauddin, P. Chandrasekhar i N. V. Koteswara Rao. "Design and simulation of programmable band-gap reference circuit". W 2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia). IEEE, 2015. http://dx.doi.org/10.1109/primeasia.2015.7450472.

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Lahiri, Abhirup, Pradeep Badrathwal, Nitin Jain i Kallol Chatterjee. "A 0.5V supply, 49nW band-gap reference and crystal oscillator in 40nm CMOS". W 2017 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2017. http://dx.doi.org/10.1109/cicc.2017.7993603.

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Yuntao Liu, Xiaowei Liu i Liang Yin. "A CMOS band-gap voltage reference with low offset". W 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734902.

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Huang, Zhihao, Xiangdong Zhu i Zhiqiang Li. "Design of a High Precision Current Mode Band Gap Reference Circuit". W 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE). IEEE, 2019. http://dx.doi.org/10.1109/eitce47263.2019.9095076.

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Ramasamy, S., B. Venkataramani i P. Meenatchisundaram. "A low power programmable band gap reference circuit with subthreshold MOSFETs". W TENCON 2008 - 2008 IEEE Region 10 Conference (TENCON). IEEE, 2008. http://dx.doi.org/10.1109/tencon.2008.4766816.

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Gupte, Soniya, i Pradnya Zode. "Design of Resistorless Low Temperature Coefficient Band Gap Reference Bias Circuit". W 2011 International Conference on Communication Systems and Network Technologies (CSNT). IEEE, 2011. http://dx.doi.org/10.1109/csnt.2011.87.

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Yu, Guoyi, i Xuecheng Zou. "A High Precision CMOS Current-mode Band-gap Voltage Reference". W 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306410.

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Ghodeswar, Ujwala, G. G. Sarate i Pravin Dakhole. "Design of band gap reference circuit in 45nm for low voltage applications". W THE 2ND UNIVERSITAS LAMPUNG INTERNATIONAL CONFERENCE ON SCIENCE, TECHNOLOGY, AND ENVIRONMENT (ULICoSTE) 2021. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0107007.

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Xu, Meihua, Jian Wu, Feng Ran i Tiezhu Li. "Design of a low voltage band-gap reference circuit for OLED-On-Silicon". W 2008 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP). IEEE, 2008. http://dx.doi.org/10.1109/icept.2008.4607007.

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