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Artykuły w czasopismach na temat „Band alignments”

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Data publikacji: 21 grudnia 2024

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1

Xia, Xinyi, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann i S. J. Pearton. "Band Alignment of Al2O3 on α-(AlxGa1-x)2O3". ECS Journal of Solid State Science and Technology 11, nr 2 (1.02.2022): 025006. http://dx.doi.org/10.1149/2162-8777/ac546f.

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X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x <0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of − 0.07 eV for x = 0.58 and −0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
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2

Tripathy, K. C., i R. Sahu. "Collective bands and yrast band alignments in 78Kr". Nuclear Physics A 597, nr 2 (styczeń 1996): 177–87. http://dx.doi.org/10.1016/0375-9474(95)00437-8.

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3

Gizon, J., D. Jerrestam, A. Gizon, M. Jozsa, R. Bark, B. Fogelberg, E. Ideguchi i in. "Alignments and band termination in99,100Ru". Zeitschrift f�r Physik A Hadrons and Nuclei 345, nr 3 (wrzesień 1993): 335–36. http://dx.doi.org/10.1007/bf01280845.

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4

Zhao, Qiyi, Yaohui Guo, Yixuan Zhou, Zehan Yao, Zhaoyu Ren, Jintao Bai i Xinlong Xu. "Band alignments and heterostructures of monolayer transition metal trichalcogenides MX3 (M = Zr, Hf; X = S, Se) and dichalcogenides MX2 (M = Tc, Re; X=S, Se) for solar applications". Nanoscale 10, nr 7 (2018): 3547–55. http://dx.doi.org/10.1039/c7nr08413g.

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The band gaps and work functions of monolayer IVB-VIA 2D TMTs MX3 and VIIB-VIA 2D TMDs MX2 are calculated and their band alignments and the relevant physical origins of the band alignments are investigated.
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5

Bhardwaj, Garima, Sandhya K., Richa Dolia, M. Abu-Samak, Shalendra Kumar i P. A. Alvi. "A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments". Bulletin of Electrical Engineering and Informatics 7, nr 1 (1.03.2018): 35–41. http://dx.doi.org/10.11591/eei.v7i1.872.

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In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.
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6

Shiel, Huw, Oliver S. Hutter, Laurie J. Phillips, Jack E. N. Swallow, Leanne A. H. Jones, Thomas J. Featherstone, Matthew J. Smiles i in. "Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells". ACS Applied Energy Materials 3, nr 12 (15.12.2020): 11617–26. http://dx.doi.org/10.1021/acsaem.0c01477.

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7

Grodzicki, Miłosz, Agata K. Tołłoczko, Dominika Majchrzak, Detlef Hommel i Robert Kudrawiec. "Band Alignments of GeS and GeSe Materials". Crystals 12, nr 10 (20.10.2022): 1492. http://dx.doi.org/10.3390/cryst12101492.

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Here we present new findings of a comprehensive study of the fundamental physicochemical properties for GeS and GeSe in bulk form. UV and X-ray photoelectron spectroscopies (UPS/XPS) were employed for the experiments, which were carried out on in situ cleaned (100) surfaces free from contamination. This allowed to obtain reliable results, also unchanged by effects related to charging of the samples. The work functions, electron affinities and ionization energies as well as core level lines were found. The band gaps of the investigated materials were determined by photoreflectance and optical absorption methods. As a result, band energy diagrams relative to the vacuum level for GeS and GeSe were constructed. The diagrams provide information about the valence and conduction band offsets, crucial for the design of various electronic devices and semiconducting heterostructures.
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8

Gutleben, C. D. "Band alignments of the platinum/SrBi2Ta2O9 interface". Applied Physics Letters 71, nr 23 (8.12.1997): 3444–46. http://dx.doi.org/10.1063/1.120402.

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9

Riley, M. A., T. B. Brown, N. R. Johnson, Y. A. Akovali, C. Baktash, M. L. Halbert, D. C. Hensley i in. "Alignments, shape changes, and band terminations inTm157". Physical Review C 51, nr 3 (1.03.1995): 1234–46. http://dx.doi.org/10.1103/physrevc.51.1234.

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10

Bjaalie, Lars, Angelica Azcatl, Stephen McDonnell, Christopher R. Freeze, Susanne Stemmer, Robert M. Wallace i Chris G. Van de Walle. "Band alignments between SmTiO3, GdTiO3, and SrTiO3". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, nr 6 (listopad 2016): 061102. http://dx.doi.org/10.1116/1.4963833.

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11

Supardan, S. N., P. Das, J. D. Major, A. Hannah, Z. H. Zaidi, R. Mahapatra, K. B. Lee i in. "Band alignments of sputtered dielectrics on GaN". Journal of Physics D: Applied Physics 53, nr 7 (12.12.2019): 075303. http://dx.doi.org/10.1088/1361-6463/ab5995.

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12

Whittles, Thomas J., Tim D. Veal, Christopher N. Savory, Peter J. Yates, Philip A. E. Murgatroyd, James T. Gibbon, Max Birkett i in. "Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics". ACS Applied Materials & Interfaces 11, nr 30 (5.07.2019): 27033–47. http://dx.doi.org/10.1021/acsami.9b04268.

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13

Adamski, Nicholas L., Darshana Wickramaratne i Chris G. Van de Walle. "Band alignments and polarization properties of the Zn-IV-nitrides". Journal of Materials Chemistry C 8, nr 23 (2020): 7890–98. http://dx.doi.org/10.1039/d0tc01578d.

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14

Xia, Xinyi, Chaker Fares, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann i S. J. Pearton. "Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1−x)2O3". ECS Journal of Solid State Science and Technology 10, nr 11 (1.11.2021): 113007. http://dx.doi.org/10.1149/2162-8777/ac39a8.

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Valence band offsets for SiO2 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys with x = 0.26–0.74 were measured by X-ray Photoelectron Spectroscopy. The samples were grown with a continuous composition spread to enable investigations of the band alignment as a function of the alloy composition. From measurement of the core levels in the alloys, the bandgaps were determined to range from 5.8 eV (x = 0.26) to 7 eV (x = 0.74). These are consistent with previous measurements by transmission spectroscopy. The valence band offsets of SiO2 with these alloys of different composition were, respectively, were −1.2 eV for x = 0.26, −0.2 eV for x = 0.42, 0.2 eV for x = 0.58 and 0.4 eV for x = 0.74. All of these band offsets are too low for most device applications. Given the bandgap of the SiO2 was 8.7 eV, this led to conduction band offsets of 4.1 eV (x = 0.26) to 1.3 eV (x = 0.74). The band alignments were of the desired nested configuration for x > 0.5, but at lower Al contents the conduction band offsets were negative, with a staggered band alignment. This shows the challenge of finding appropriate dielectrics for this ultra-wide bandgap semiconductor system.
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15

Dreyer, Cyrus E., John L. Lyons, Anderson Janotti i Chris G. Van de Walle. "Band alignments and polarization properties of BN polymorphs". Applied Physics Express 7, nr 3 (7.02.2014): 031001. http://dx.doi.org/10.7567/apex.7.031001.

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16

Shim, Kyurhee. "Band alignments in Al-doped GaInAsSb/GaSb heterojunctions". Journal of the Korean Crystal Growth and Crystal Technology 26, nr 6 (31.12.2016): 225–31. http://dx.doi.org/10.6111/jkcgct.2016.26.6.225.

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17

Mi, Y. Y., S. J. Wang, J. W. Chai, J. S. Pan, A. C. H. Huan, M. Ning i C. K. Ong. "Energy-band alignments at LaAlO3 and Ge interfaces". Applied Physics Letters 89, nr 20 (13.11.2006): 202107. http://dx.doi.org/10.1063/1.2387986.

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18

Mullins, S. M., A. Omar, L. Persson, D. Prévost, J. C. Waddington, H. R. Andrews, G. C. Ball i in. "Perturbed alignments within ani13/2neutron intruder band inGd141". Physical Review C 47, nr 6 (1.06.1993): R2447—R2451. http://dx.doi.org/10.1103/physrevc.47.r2447.

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19

Ota, Yuichi. "Band alignments of graphene-like III-nitride semiconductors". Solid State Communications 270 (luty 2018): 147–50. http://dx.doi.org/10.1016/j.ssc.2017.12.008.

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20

Zhu, Yan, i Mantu K. Hudait. "Low-power tunnel field effect transistors using mixed As and Sb based heterostructures". Nanotechnology Reviews 2, nr 6 (1.12.2013): 637–78. http://dx.doi.org/10.1515/ntrev-2012-0082.

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AbstractReducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal oxide semiconductor field effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF ratio in current integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. TFETs based on group III-V compound semiconductor materials further improve the ON-state current and reduce SS due to the low band gap energies and smaller carrier tunneling mass. The mixed arsenide/antimonide (As/Sb) InxGa1-xAs/GaAsySb1-y heterostructures allow a wide range of band gap energies and various staggered band alignments depending on the alloy compositions in the source and channel materials. Band alignments at source/channel heterointerface can be well modulated by carefully controlling the compositions of the mixed As/Sb material system. In particular, this review introduces and summarizes the progress in the development and optimization of low-power TFETs using mixed As/Sb based heterostructures including basic working principles, design considerations, material growth, interface engineering, material characterization, device fabrication, device performance investigation, band alignment determination, and high temperature reliability. A review of TFETs using mixed As/Sb based heterostructures shows superior structural properties and distinguished device performance, both of which indicate the mixed As/Sb staggered gap TFET as a promising option for high-performance, low-standby power, and energy-efficient logic circuit application.
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21

Cheng, Kai, Yu Guo, Nannan Han, Yan Su, Junfeng Zhang i Jijun Zhao. "Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties". Journal of Materials Chemistry C 5, nr 15 (2017): 3788–95. http://dx.doi.org/10.1039/c7tc00595d.

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22

Tamin, Charif, Denis Chaumont, Olivier Heintz, Aymeric Leray i Mohamed Adnane. "Improvement of hetero-interface engineering by partial substitution of Zn in Cu2ZnSnS4-based solar cells". EPJ Photovoltaics 13 (2022): 24. http://dx.doi.org/10.1051/epjpv/2022022.

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This paper investigates the effects of partial substitution of zinc (Zn) in pure sulfide kesterite (Cu2ZnSnS4) by cadmium (Cd) and manganese (Mn) incorporation. Thin films of Cu2ZnSnS4 (CZTS), Cu2Zn1–xCdxSnS4 (CCZTS) and Cu2Zn1–xMnxSnS4(CMZTS) were produced chemically. A comparison of pure CZTS with CCZTS and CMZTS was performed to study the influence of Cd and Mn incorporation on the morphology, structure, optical and electronic properties of the films. The results show an improvement of the morphology and an adjustment of the band gap and valence band position by partial substitution of Zn with Cd and Mn. In addition, for the first time, the band alignment at the absorber/buffer hetero-interface is studied with partial Zn substitution. Band alignments at the absorber/buffer hetero-interface were estimated by XPS and UV/Visible measurements. The results show a cliff-like CBO for CZTS/CdS heterojunction, a spike-like CBO for CCZTS/CdS and a near flat-band CBO for CMZTS/CdS heterojunction.
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23

Zhou, Wenhan, Xuhai Liu, Xuemin Hu, Shengli Zhang, Chunyi Zhi, Bo Cai, Shiying Guo, Xiufeng Song, Zhi Li i Haibo Zeng. "Band offsets in new BN/BX (X = P, As, Sb) lateral heterostructures based on bond-orbital theory". Nanoscale 10, nr 34 (2018): 15918–25. http://dx.doi.org/10.1039/c8nr05194a.

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24

Dawson, P., B. A. Wilson, C. W. Tu i R. C. Miller. "Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets". Applied Physics Letters 48, nr 8 (24.02.1986): 541–43. http://dx.doi.org/10.1063/1.96500.

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Xia, Xinyi, Jian-Sian Li, Md Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi, David C. Hays, Fan Ren i S. J. Pearton. "Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN". Journal of Applied Physics 132, nr 23 (21.12.2022): 235701. http://dx.doi.org/10.1063/5.0131766.

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The band alignments of two candidate dielectrics for ScAlN, namely, SiO2 and Al2O2, were obtained by x-ray photoelectron spectroscopy. We compared the effect of deposition method on the valence band offsets of both sputtered and atomic layer deposition films of SiO2 and Al2O3 on Sc0.27Al0.73 N (bandgap 5.1 eV) films. The band alignments are type I (straddled gap) for SiO2 and type II (staggered gap) for Al2O3. The deposition methods make a large difference in relative valence band offsets, in the range 0.4–0.5 eV for both SiO2 and Al2O3. The absolute valence band offsets were 2.1 or 2.6 eV for SiO2 and 1.5 or 1.9 eV for Al2O3 on ScAlN. Conduction band offsets derived from these valence band offsets, and the measured bandgaps were then in the range 1.0–1.1 eV for SiO2 and 0.30–0.70 eV for Al2O3. These latter differences can be partially ascribed to changes in bandgap for the case of SiO2 deposited by the two different methods, but not for Al2O3, where the bandgap as independent of deposition method. Since both dielectrics can be selectively removed from ScAlN, they are promising as gate dielectrics for transistor structures.
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26

Don, Christopher H., Huw Shiel, Theodore D. C. Hobson, Christopher N. Savory, Jack E. N. Swallow, Matthew J. Smiles, Leanne A. H. Jones i in. "Sb 5s2 lone pairs and band alignment of Sb2Se3: a photoemission and density functional theory study". Journal of Materials Chemistry C 8, nr 36 (2020): 12615–22. http://dx.doi.org/10.1039/d0tc03470c.

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Lone pair Sb 5s orbitals are identified at the valence band maximum of Sb2Se3 bulk crystals using photoemission and density functional theory. The resulting band alignments are determined and implications for solar cell applications are discussed.
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27

Cho, Deok-Yong. "Band Alignments in Oxygen-Deficient HfO2/Si(100) Interfaces". Journal of the Korean Physical Society 51, nr 92 (14.08.2007): 647. http://dx.doi.org/10.3938/jkps.51.647.

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Dalapati, Goutam Kumar, Hoon-Jung Oh, Sung Joo Lee, Aaditya Sridhara, Andrew See Weng Wong i Dongzhi Chi. "Energy-band alignments of HfO2 on p-GaAs substrates". Applied Physics Letters 92, nr 4 (28.01.2008): 042120. http://dx.doi.org/10.1063/1.2839406.

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Ma, R., Y. Liang, E. S. Paul, N. Xu, D. B. Fossan, L. Hildingsson i R. A. Wyss. "Competing proton and neutron rotational alignments: Band structures inBa131". Physical Review C 41, nr 2 (1.02.1990): 717–29. http://dx.doi.org/10.1103/physrevc.41.717.

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30

Wang, X., D. L. Kencke, K. C. Liu, L. F. Register i S. K. Banerjee. "Band alignments in sidewall strained Si/strained SiGe heterostructures". Solid-State Electronics 46, nr 12 (grudzień 2002): 2021–25. http://dx.doi.org/10.1016/s0038-1101(02)00247-2.

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31

Debernardi, A., M. Peressi i A. Baldereschi. "Spin polarization and band alignments at NiMnSb/GaAs interface". Computational Materials Science 33, nr 1-3 (kwiecień 2005): 263–68. http://dx.doi.org/10.1016/j.commatsci.2004.12.048.

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32

Uttamchandani, Rajiv, Xu Zhang, Sadasivan Shankar i Gang Lu. "Chemical tuning of band alignments for Cu/HfO2 interfaces". physica status solidi (b) 252, nr 2 (15.09.2014): 298–304. http://dx.doi.org/10.1002/pssb.201451200.

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Du, Juan, Congxin Xia, Wenqi Xiong, Tianxing Wang, Yu Jia i Jingbo Li. "Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures". Nanoscale 9, nr 44 (2017): 17585–92. http://dx.doi.org/10.1039/c7nr06473j.

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Yeon, Deuk Ho, Seung Min Lee, Yeon Hwa Jo, Jooho Moon i Yong Soo Cho. "Origin of the enhanced photovoltaic characteristics of PbS thin film solar cells processed at near room temperature". J. Mater. Chem. A 2, nr 47 (2014): 20112–17. http://dx.doi.org/10.1039/c4ta03433c.

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35

Zhu, Zhi, Zhixiang Liu, Xu Tang, Kumar Reeti, Pengwei Huo, Jonathan Woon-Chung Wong i Jun Zhao. "Sulfur-doped g-C3N4 for efficient photocatalytic CO2 reduction: insights by experiment and first-principles calculations". Catalysis Science & Technology 11, nr 5 (2021): 1725–36. http://dx.doi.org/10.1039/d0cy02382e.

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Whittles, Thomas J., Tim D. Veal, Christopher N. Savory, Adam W. Welch, Francisco Willian de Souza Lucas, James T. Gibbon, Max Birkett i in. "Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications". ACS Applied Materials & Interfaces 9, nr 48 (21.11.2017): 41916–26. http://dx.doi.org/10.1021/acsami.7b14208.

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Bhuiyan, A. F. M. Anhar Uddin, Lingyu Meng, Hsien-Lien Huang, Jinwoo Hwang i Hongping Zhao. "In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films". Journal of Applied Physics 132, nr 16 (28.10.2022): 165301. http://dx.doi.org/10.1063/5.0104433.

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The in situ metalorganic chemical vapor deposition (MOCVD) growth of Al2O3 dielectrics on β-Ga2O3 and β-(AlxGa1−x)2O3 films is investigated as a function of crystal orientations and Al compositions of β-(AlxGa1−x)2O3 films. The interface and film qualities of Al2O3 dielectrics are evaluated by high-resolution x-ray diffraction and scanning transmission electron microscopy imaging, which indicate the growth of high-quality amorphous Al2O3 dielectrics with abrupt interfaces on (010), (100), and [Formula: see text] oriented β-(AlxGa1−x)2O3 films. The surface stoichiometries of Al2O3 deposited on all orientations of β-(AlxGa1−x)2O3 are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high-resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al2O3 dielectrics. The evolution of band offsets at both in situ MOCVD and ex situ ALD deposited Al2O3/β-(AlxGa1−x)2O3 is determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of β-(AlxGa1−x)2O3 films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al2O3/β-(AlxGa1−x)2O3 interfaces for the (010) and (100) orientations, whereas type I band alignments with relatively low conduction band offsets are observed along the [Formula: see text] orientation. The results from this study on MOCVD growth and band offsets of amorphous Al2O3 deposited on differently oriented β-Ga2O3 and β-(AlxGa1−x)2O3 films will potentially contribute to the design and fabrication of future high-performance β-Ga2O3 and β-(AlxGa1−x)2O3 based transistors using MOCVD in situ deposited Al2O3 as a gate dielectric.
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38

Papadopoulos, C. T., R. Vlastou, M. Serris, C. A. Kalfas, N. Fotiades, S. Harissopulos, S. Kosslonides i in. "High spin structure of 155Dy". HNPS Proceedings 3 (5.12.2019): 114. http://dx.doi.org/10.12681/hnps.2378.

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High spin states in 155Dy have been studied by γ-γ coincidence measurements via the 124Sn(36S, 5n)155Dy reaction at a beam energy of 155 MeV. Eight rotational bands have been populated and observed up to high spin (I<91/2).The band features have been analysed within the framework of the cranked shell model. The Ì13/2 neutron alignments and the h11/2 proton alignments are discussed. B(M1)/B(E2) ratios have also been extracted for the strongly coupled bands to deduce further information on the detailed structure of these bands. For the highest states (above spin 30) of the negative parity bands an irregularity in y-ray energies appears which is discussed in terms of band termination.
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39

Si, Yuan, Hong-Yu Wu, Ji-Chun Lian, Wei-Qing Huang, Wang-Yu Hu i Gui-Fang Huang. "A design rule for two-dimensional van der Waals heterostructures with unconventional band alignments". Physical Chemistry Chemical Physics 22, nr 5 (2020): 3037–47. http://dx.doi.org/10.1039/c9cp06465f.

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Gibbon, J. T., L. Jones, J. W. Roberts, M. Althobaiti, P. R. Chalker, Ivona Z. Mitrovic i V. R. Dhanak. "Band alignments at Ga2O3 heterojunction interfaces with Si and Ge". AIP Advances 8, nr 6 (czerwiec 2018): 065011. http://dx.doi.org/10.1063/1.5034459.

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Kwok, S. H., P. Y. Yu, K. Uchida i T. Arai. "Band alignments in GaInP/GaP/GaAs/GaP/GaInP quantum wells". Applied Physics Letters 71, nr 8 (25.08.1997): 1110–12. http://dx.doi.org/10.1063/1.119742.

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Wang, S. J., J. W. Chai, J. S. Pan i A. C. H. Huan. "Thermal stability and band alignments for Ge3N4 dielectrics on Ge". Applied Physics Letters 89, nr 2 (10.07.2006): 022105. http://dx.doi.org/10.1063/1.2220531.

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Oelerich, Jan Oliver, Maria J. Weseloh, Kerstin Volz i Stephan W. Koch. "Ab-initio calculation of band alignments for opto-electronic simulations". AIP Advances 9, nr 5 (maj 2019): 055328. http://dx.doi.org/10.1063/1.5087756.

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Sarney, W. L., J. W. Little i S. P. Svensson. "Microstructural characterization of quantum dots with type-II band alignments". Solid-State Electronics 50, nr 6 (czerwiec 2006): 1124–27. http://dx.doi.org/10.1016/j.sse.2006.04.016.

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Nosaka, Yoshio, i Atsuko Y. Nosaka. "Reconsideration of Intrinsic Band Alignments within Anatase and Rutile TiO2". Journal of Physical Chemistry Letters 7, nr 3 (4.02.2016): 431–34. http://dx.doi.org/10.1021/acs.jpclett.5b02804.

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Yang, M., W. S. Deng, Q. Chen, Y. P. Feng, L. M. Wong, J. W. Chai, J. S. Pan, S. J. Wang i C. M. Ng. "Band alignments at SrZrO3/Ge(001) interface: Thermal annealing effects". Applied Surface Science 256, nr 15 (maj 2010): 4850–53. http://dx.doi.org/10.1016/j.apsusc.2010.01.115.

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Guo, Yuzheng, i John Robertson. "Schottky barrier heights and band alignments in transition metal dichalcogenides". Microelectronic Engineering 147 (listopad 2015): 184–87. http://dx.doi.org/10.1016/j.mee.2015.04.069.

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Trager-Cowan, C., P. J. Parbrook, B. Henderson i K. P. O'Donnell. "Band alignments in Zn(Cd)S(Se) strained layer superlattices". Semiconductor Science and Technology 7, nr 4 (1.04.1992): 536–41. http://dx.doi.org/10.1088/0268-1242/7/4/016.

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Li, Y. B., D. J. Bain, L. Hart, M. Livingstone, C. M. Ciesla, M. J. Pullin, P. J. P. Tang i in. "Band alignments and offsets in In(As,Sb)/InAs superlattices". Physical Review B 55, nr 7 (15.02.1997): 4589–95. http://dx.doi.org/10.1103/physrevb.55.4589.

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Martínez-Pastor, J., J. Camacho, C. Rudamas, A. Cantarero, L. González i K. Syassen. "Band Alignments in InxGa1xP/GaAs Heterostructures Investigated by Pressure Experiments". physica status solidi (a) 178, nr 1 (marzec 2000): 571–76. http://dx.doi.org/10.1002/1521-396x(200003)178:1<571::aid-pssa571>3.0.co;2-m.

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