Gotowa bibliografia na temat „Atomic-resolution TEM”
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Artykuły w czasopismach na temat "Atomic-resolution TEM"
Bell, David C., Christopher J. Russo i Dmitry V. Kolmykov. "40keV atomic resolution TEM". Ultramicroscopy 114 (marzec 2012): 31–37. http://dx.doi.org/10.1016/j.ultramic.2011.12.001.
Pełny tekst źródłaYagi, K., H. Sato, K. Kobayashi, Y. Nishiyama i Y. Tanaka. "TEM study of Si surfaces". Proceedings, annual meeting, Electron Microscopy Society of America 50, nr 1 (sierpień 1992): 280–81. http://dx.doi.org/10.1017/s0424820100121806.
Pełny tekst źródłaLee, Yangjin, Jun-Yeong Yoon, Hu Young Jeong i Kwanpyo Kim. "Atomic-Resolution TEM Imaging of Phosphorene Protected by Graphene". Microscopy and Microanalysis 25, S2 (sierpień 2019): 1696–97. http://dx.doi.org/10.1017/s1431927619009218.
Pełny tekst źródłaHashimoto, Hatsujiro. "Contribution of Atomic-Level TEM to Resolution of Structure". Proceedings, annual meeting, Electron Microscopy Society of America 48, nr 1 (12.08.1990): 4–5. http://dx.doi.org/10.1017/s042482010017877x.
Pełny tekst źródłaCochrane, Heather D., John L. Hutchison i Donald White. "Surface studies of catalytic ceria using atomic-resolution tem". Ultramicroscopy 31, nr 1 (wrzesień 1989): 138–42. http://dx.doi.org/10.1016/0304-3991(89)90044-2.
Pełny tekst źródłaKrakow, William, David P. Divincenzo, Peter A. Bancel, Eric Cockayne i Veit Elser. "High-resolution TEM of Al-Cu-Fe quasicrystals". Proceedings, annual meeting, Electron Microscopy Society of America 50, nr 1 (sierpień 1992): 118–19. http://dx.doi.org/10.1017/s0424820100120990.
Pełny tekst źródłaZhang, Xiao Feng, i Takeo Kamino. "Imaging Gas-Solid Interactions in an Atomic Resolution Environmental TEM". Microscopy Today 14, nr 5 (wrzesień 2006): 16–19. http://dx.doi.org/10.1017/s1551929500058600.
Pełny tekst źródłaKujawa, S., B. Freitag i D. Hubert. "An Aberration Corrected (S)TEM Microscope for Nanoresearch". Microscopy Today 13, nr 4 (lipiec 2005): 16–21. http://dx.doi.org/10.1017/s1551929500053608.
Pełny tekst źródłaZhang, Xiao Feng. "Enabling Lab-in-Gap Transmission Electron Microscopy at Atomic Resolution". Microscopy Today 24, nr 1 (styczeń 2016): 24–29. http://dx.doi.org/10.1017/s1551929515000930.
Pełny tekst źródłaHasegawa, Tsuyoshi, Kunio Kobayashi, Nobuyuki Ikarashi, Kunio Takayanagi i Katsumichi Yagi. "Atomic Resolution TEM Images of the Au(001) Reconstructed Surface". Japanese Journal of Applied Physics 25, Part 2, No. 5 (20.05.1986): L366—L368. http://dx.doi.org/10.1143/jjap.25.l366.
Pełny tekst źródłaRozprawy doktorskie na temat "Atomic-resolution TEM"
Cochrane, Heather Dunlop. "Surface studies of catalytic cerias using atomic resolution TEM". Thesis, University of Oxford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.276508.
Pełny tekst źródłaHe, Kuang. "Synthesis and atomic resolution AC-TEM characterisation of graphene edges". Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:32b4ea72-5a60-4c1f-9d93-9d9fe1cc4382.
Pełny tekst źródłaLi, Siqian. "The atomic struture of inversion domains and grain boundaries in wurtzite semonconductors : an investigation by atomistic modelling and high resolution transmission electron microscopy". Thesis, Normandie, 2018. http://www.theses.fr/2018NORMC252/document.
Pełny tekst źródłaIn this work, we investigated two kinds of interfacial defects: inversion domain boundaries (IDBs) and grain boundaries (GB) in wurtzite semiconductors (III-nitrides, ZnO and ZnO/GaN heterostructure) using high-resolution TEM and first-principle calculations. For IDBs, theoretical calculation indicated that a head-to-head IDB with an interfacial stacking sequence of AaBbAa-AcCaA (H4) is the most stable structure in wurtzite compounds. Moreover, 2-dimensional electron gas (2DEG) and 2-dimensional hole gas (2DHG) build up in head-to-head and tail-to-tail IDBs, respectively. Considering the IDB at the ZnO/GaN heterointerface, TEM observations unveiled the H4 configuration with a -Zn-O-Ga-N interface. Moreover the theoretical investigation also confirmed stability of this interface along with the corresponding formation of a 2DHG. A detailed topological, TEM and theoretical investigation of [0001] tilt Grain Boundaries (GBs) in wurtzite symmetry has also been carried out. In GaN, it is shown that the GBs are only made of separated a edge dislocations with 4, 5/7 and 8 atoms rings. For ZnO, a new structural unit: the [101 ̅0] edge dislocation made of connected 6-8-4-atom rings is reported for the first time, in agreement with an early theoretical report on dislocations and jogs in the wurtzite symmetry
Bacia, Maria. "Comportement du carbone aux joints de grains du molybdène". Grenoble INPG, 1994. http://www.theses.fr/1994INPG4210.
Pełny tekst źródłaSun, Xingsheng. "A Computational Framework for Long-Term Atomistic Analysis of Solute Diffusion in Nanomaterials". Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/85242.
Pełny tekst źródłaPh. D.
Interstitial diffusion in crystalline solids describes a phenomenon in which the solute constituents (e.g., atoms) move from an interstitial space of the host lattice to a neighboring one that is empty. It is a dominating feature in many important engineering applications, such as metal hydrides, lithium-ion batteries and hydrogen-induced material failures. These applications involve some key problems that might take place over long time periods (e.g., longer than 1 s), while the nanoscale behaviors and mechanisms become significant. The time scale of these problems is beyond the capability of established atomistic models, e.g., accelerated Molecular Dynamics and on-the-fly kinetic Monte Carlo. To this end, this dissertation presents the development and application of a new computational framework, referred to as Diffusive Molecular Dynamics (DMD), for the simulation of long-term interstitial solute diffusion in advanced nanomaterials. The framework includes three key components. Firstly, a DMD computational model is proposed, which accounts for three-dimensional, deformation-diffusion coupled analysis of interstitial solute mass transport. Secondly, nu- merical methods are employed to accelerate the DMD simulations while maintaining a high solution accuracy. Thirdly, a high-performance computational solver is developed to implement the DMD model and the numerical methods. Moreover, regarding its application, the DMD framework is first validated and assessed in the numerical experiments pertaining to hydrogen mass transport in palladium crystals. Then, it is employed to investigate the atomic behaviors and mechanisms involved in the long-term hydrogen absorption by palladium nanoparticles with different sizes and shapes. The two-way interaction between hydrogen absorption and lattice deformation is studied in detail.
Bansal, Ujjval. "Development of a coarsening resistant microstructure in precipitation strengthened aluminium alloys with Zr, Ta and Hf". Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5237.
Pełny tekst źródłaCzęści książek na temat "Atomic-resolution TEM"
Tochigi, Eita, Bin Miao, Shun Kondo, Naoya Shibata i Yuichi Ikuhara. "TEM Characterization of Lattice Defects Associated with Deformation and Fracture in α-Al2O3". W The Plaston Concept, 133–56. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7715-1_7.
Pełny tekst źródłaHarano, Koji, i Eiichi Nakamura. "Conformational Analysis of Organic Molecules with Single-Molecule Atomic-Resolution Real-Time Transmission Electron Microscopy (SMART-TEM) Imaging". W Molecular Technology, 339–68. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2019. http://dx.doi.org/10.1002/9783527823987.vol4_c12.
Pełny tekst źródłaSchmidt-Böcking, H., S. Eckart, H. J. Lüdde, G. Gruber i T. Jahnke. "The Precision Limits in a Single-Event Quantum Measurement of Electron Momentum and Position". W Molecular Beams in Physics and Chemistry, 223–45. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63963-1_12.
Pełny tekst źródłaKrishnan, Kannan M. "Transmission and Analytical Electron Microscopy". W Principles of Materials Characterization and Metrology, 552–692. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198830252.003.0009.
Pełny tekst źródłaUeda, O., Y. Sakuma, M. Ozeki, N. Ohtsuka i K. Nakajima. "High-Resolution TEM Evaluation of InAs/InP Strained Layer Superlattices Grown on (001)InAs Substrates by Atomic Layer Epitaxy". W Control of Semiconductor Interfaces, 531–36. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50097-3.
Pełny tekst źródłaKrishnan, Kannan M. "Scanning Electron Microscopy". W Principles of Materials Characterization and Metrology, 693–744. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198830252.003.0010.
Pełny tekst źródłaStreszczenia konferencji na temat "Atomic-resolution TEM"
Hubbard, William A., Ho Leung Chan i B. C. Regan. "High-Resolution Conductivity Mapping with STEM EBIC". W ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0251.
Pełny tekst źródłaGai, Pratibha. "Atoms in action for energy, healthcare and environment using in-situ atomic resolution environmental (S)TEM". W European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.506.
Pełny tekst źródłade Knoop, Ludvig. "Electric Field-Induced Surface Melting of Gold at Room Temperature visualized at Atomic Resolution Using In Situ TEM". W European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1421.
Pełny tekst źródłaNguyen, Tai D., Michael A. O'Keefe, Roar Kilaas, Ronald Gronsky i Jeffrey B. Kortright. "Effects of Fresnel Fringes on TEM Images of Interfaces in X-Ray Multilayers". W Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/pxrayms.1992.tub2.
Pełny tekst źródłaDemarest, James, i John Bruley. "Quantitative SiGe TEM Elemental Analysis in FinFET Test Structures". W ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0120.
Pełny tekst źródłaWang, Qi, L. Knight i J. Thorne. "Imaging Cross Section Of X-ray Multilayer By STM". W Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/pxrayms.1994.wc.5.
Pełny tekst źródłaLund, Mark W. "High reflectivity x-ray multilayers using reactive ion sputtering". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.tuee6.
Pełny tekst źródłaChang, Chih-Chung, Jian-Chang Lin, Wen-Sheng Wu, Chih-Ying Tasi i Ching-Lin Chang. "A Novel Technique of Device Measurement after Cross-Sectional FIB in Failure Analysis". W ISTFA 2009. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.istfa2009p0230.
Pełny tekst źródłaVahdat, Vahid, David S. Grierson, Kevin T. Turner i Robert W. Carpick. "Nano-Scale Forces, Stresses, and Tip Geometry Evolution of Amplitude Modulation Atomic Force Microscopy Probes". W ASME 2011 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/detc2011-48653.
Pełny tekst źródłaWest, Paul, i Natasha Starostina. "AFM Capabilities in Characterization of Particle Nanocomposites: From Angstroms to Microns". W ASME 2006 Multifunctional Nanocomposites International Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/mn2006-17020.
Pełny tekst źródłaRaporty organizacyjne na temat "Atomic-resolution TEM"
Or, Dani, Shmulik Friedman i Jeanette Norton. Physical processes affecting microbial habitats and activity in unsaturated agricultural soils. United States Department of Agriculture, październik 2002. http://dx.doi.org/10.32747/2002.7587239.bard.
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