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Artykuły w czasopismach na temat „Antiferroelectric materials”

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Data publikacji: 7 grudnia 2024

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1

Lu, Xue-Zeng, i James M. Rondinelli. "Hybrid improper antiferroelectricity—New insights for novel device concepts". MRS Advances 5, nr 64 (2020): 3521–45. http://dx.doi.org/10.1557/adv.2020.450.

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AbstractAntiferroelectrics have been studied for decades, with most research focused on PbZrO3 or related compounds obtained through chemical substitution. Although there are several important antiferroelectrics found in AVO4 (A=Dy, Bi), orthorhombic ABC semiconductors (e.g., MgSrSi) and hydrogen-bonded antiferroelectric materials, experimentally demonstrated antiferroelectrics are far less common. Furthermore, antiferroelectrics have potential applications in energy storage and for strain and force generators. In recent years, hybrid improper ferroelectrics have been intensively studied, along which the hybrid improper antiferroelectric phase was proposed and demonstrated in (001) Ruddlesden−Popper A3B2O7 thin films from first-principles calculations. Later, the hybrid improper antiferroelectric phase was discovered experimentally in several Ruddlesden−Popper perovskites in bulk. Across the hybrid improper ferroelectric-antiferroelectric phase transition, several interesting phenomena were also predicted. In this snapshot review, we describe recent progress in hybrid improper antiferroelectricity.

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2

Yang, Dong, Jing Gao, Liang Shu, Yi-Xuan Liu, Jingru Yu, Yuanyuan Zhang, Xuping Wang, Bo-Ping Zhang i Jing-Feng Li. "Lead-free antiferroelectric niobates AgNbO3 and NaNbO3 for energy storage applications". Journal of Materials Chemistry A 8, nr 45 (2020): 23724–37. http://dx.doi.org/10.1039/d0ta08345c.

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3

Zhou, Long Jie, Georg Rixecker, André Zimmermann i Fritz Aldinger. "Composition Dependent Fatigue in Antiferroelectric PZST Ceramics Induced by Bipolar Electric Cycling". Materials Science Forum 475-479 (styczeń 2005): 1193–96. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1193.

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Bipolar electric fatigue in antiferroelectrics of the lead zirconate titanate stannate ceramics family was investigated. Variations in strain hysteresis loops and damages in microstructure of the materials due to the electric cycling were analyzed. The materials showed symmetric or asymmetric suppression of strain hysteresis loop, normal or diffuse AFE-FE phase transition and intact or damaged microstructure after 5×10-7 cycles, indicating a strong composition dependent fatigue effect and the corresponding mechanism. In general, the antiferroelectric materials exhibited much higher fatigue resistance than ferroelectric ceramics reported previously.

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4

Kho, Wonwoo, Hyunjoo Hwang, Jisoo Kim, Gyuil Park i Seung-Eon Ahn. "Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures". Nanomaterials 13, nr 3 (21.01.2023): 439. http://dx.doi.org/10.3390/nano13030439.

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Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materials because of their ability to maintain polarization, even when an external electric field is removed. Recently, it has been reported that HfO2 thin films compatible with complementary metal–oxide–semiconductor (CMOS) processes exhibit ferroelectricity even at a thickness of less than 10 nm. Among the ferroelectric-based memories, ferroelectric tunnel junctions are attracting attention as ideal devices for improving integration and miniaturization due to the advantages of a simple metal–ferroelectric–metal two-terminal structure and low ultra-low power driving through tunneling. The FTJs are driven by adjusting the tunneling electrical resistance through partial polarization switching. Theoretically and experimentally, a large memory window in a broad coercive field and/or read voltage is required to induce sophisticated partial-polarization switching. Notably, antiferroelectrics (like) have different switching properties than ferroelectrics, which are generally applied to ferroelectric tunnel junctions. The memory features of ferroelectric tunnel junctions are expected to be improved through a broad coercive field when the switching characteristics of the ferroelectric and antiferroelectric (like) are utilized concurrently. In this study, the implementation of multiresistance states was improved by driving the ferroelectric and antiferroelectric (like) devices in parallel. Additionally, by modulating the area ratio of ferroelectric and antiferroelectric (like), the memory window size was increased, and controllability was enhanced by increasing the switchable voltage region. In conclusion, we suggest that ferroelectric and antiferroelectric (like) parallel structures may overcome the limitations of the multiresistance state implementation of existing ferroelectrics.

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5

Czuprynski, K., J. Gasowska, M. Tykarska, P. Kula, E. Sokól, W. Piecek, J. M. Oton i M. P. L. Castillo. "Orthoconic antiferroelectric liquid crystalline materials". Journal of Optical Technology 72, nr 9 (1.09.2005): 655. http://dx.doi.org/10.1364/jot.72.000655.

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6

Chaudhary, Shristi, Sheela Devi i Shilpi Jindal. "Antiferroelectric Lead based Perovskite Material properties andapplications: A Review". E3S Web of Conferences 509 (2024): 03002. http://dx.doi.org/10.1051/e3sconf/202450903002.

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In this review paper, the discussion is about some of the lead based antiferroelectric (AFE) perovskite materials. The antiferroelectric perovskite materials mainly lead zirconate (PZ) and lead zirconate titanate (PZT) prepared by solid state reaction route with their structure change at different concentrations, phase transition, their dielectric properties ormore. These materials caught the attention of the researchers because of their use in high energy storage devices, pyroelectric devices, sensors, cooling devices, pulse power generators and have many more applications. The reason could be their electric field phase transformation between the antiferroelectric (AFE) state and ferroelectric (FE) state and the phase switching property can be one of the strong factors responsible for the performance of the PZ based materials. Thecentral focus of this review is to briefly explain the continuous increase in research in the antiferroelectric materials by enhancing the PZ with many dopants. We mainly address PZ and PZT solid solution properties.

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7

Yin, Jia-Hang, Guo-Long Tan i Cong-Cong Duan. "Antiferroelectrics and Magnetoresistance in La0.5Sr0.5Fe12O19 Multiferroic System". Materials 16, nr 2 (4.01.2023): 492. http://dx.doi.org/10.3390/ma16020492.

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The appearance of antiferroelectrics (AFE) in the ferrimagnetism (FM) system would give birth to a new type of multiferroic candidate, which is significant to the development of novel devices for energy storage. Here we demonstrate the realization of full antiferroelectrics in a magnetic La0.5Sr0.5Fe12O19 system (AFE+FM), which also presents a strong magnetodielectric response (MD) and magnetoresistance (MR) effect. The antiferroelectric phase was achieved at room temperature by replacing 0.5 Sr2+ ions with 0.5 La2+ ions in the SrFe12O19 compound, whose phase transition temperature of ferroelectrics (FE) to antiferroelectrics was brought down from 174 °C to −141 °C, while the temperature of antiferroelectrics converting to paraelectrics (PE) shifts from 490 °C to 234 °C after the substitution. The fully separated double P-E hysteresis loops reveal the antiferroelectrics in La0.5Sr0.5Fe12O19 ceramics. The magnitude of exerting magnetic field enables us to control the generation of spin current, which induces MD and MR effects. A 1.1T magnetic field induces a large spin current of 15.6 n A in La0.5Sr0.5Fe12O19 ceramics, lifts up dielectric constants by 540%, and lowers the resistance by −89%. The magnetic performance remains as usual. The multiple functions in one single phase allow us to develop novel intelligent devices.

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8

Hu, Tengfei, Zhengqian Fu, Zhenqing Li, Ziyi Yu, Linlin Zhang, Heliang Yao, Kun Zeng i in. "Electric-induced devil’s staircase in perovskite antiferroelectric". Journal of Applied Physics 131, nr 21 (7.06.2022): 214105. http://dx.doi.org/10.1063/5.0094919.

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Antiferroelectric ceramics can realize ultra-high energy storage, which benefits from transformation between an antiferroelectric phase and a ferroelectric phase. Understanding the mechanism of such phase transition is the key point for building the structure-property correlation. Here, we report the observation of electric-induced devil’s staircase in the course of antiferroelectric–ferroelectric phase transition in PbZrO3-based antiferroelectric ceramics by in situ transmission electron microscopy. The dynamic evolution as-revealed in both reciprocal- and real-space involves stepwise rather than monotonic increase in modulation periods along with simultaneous proliferation of nanodomains. Desynchrony of phase transition is observed for incommensurate domains with different initial modulation periods within a single antiferroelectric domain. Then, the synergistic effect of the devil's staircase and as small as possible the initial modulation period is believed to contribute to the superior energy-storage performance. These findings will be helpful for the development of theories for antiferroelectric–ferroelectric phase transition and the design of high-power antiferroelectric materials.

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9

Shan, Pai, i Xifa Long. "Symmetry of antiferroelectric crystals crystallized in polar point groups". IUCrJ 9, nr 4 (28.06.2022): 516–22. http://dx.doi.org/10.1107/s2052252522006017.

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Symmetry is an essential concept in physics, chemistry and materials science. Comprehensive, authoritative and accessible symmetry theory can provide a strong impetus for the development of related materials science. Through the sustained efforts of physicists and crystallographers, researchers have mastered the relationship between structural symmetry and ferroelectricity, which demands crystallization in the 10 polar point groups. However, the symmetry requirement for antiferroelectricity is still ambiguous, and polar crystals possessing antiferroelectricity seem contradictory. This work systematically and comprehensively studies the transformation of dipole moments under symmetry operations, using accessible geometric methods and group theory. The results indicate crystals that crystallize in polar point groups 2 (C 2), m (C 1h), mm2 (C 2v), 4 (C 4), 4mm (C 4v), 3m (C 3v), 6 (C 6) and 6mm (C 6v) also possess anti-polar structure and are capable of Kittel-type antiferroelectricity. The anti-polar direction of each point group is also highlighted, which could provide a straightforward guide for antiferroelectric property measurement. Like ferroelectric crystals, antiferroelectric crystals belonging to polar point groups have great potential to become a family of important multifunctional electroactive and optical materials. This contribution refines antiferroelectric theory, will help facilitate and stimulate the discovery and rational design of novel antiferroelectric crystals, and enrich the potential functional applications of antiferroelectric materials.

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10

Chattopadhyay, Soma, Pushan Ayyub, R. Pinto i M. S. Multani. "Synthesis of thin films of polycrystalline ferroelectric BiNbO4 on Si by pulsed laser ablation". Journal of Materials Research 13, nr 5 (maj 1998): 1113–16. http://dx.doi.org/10.1557/jmr.1998.0155.

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The stibiotantalite (ABO4) family includes a number of ferroelectrics and antiferroelectrics with excellent potential for applications. We report the deposition of phase-pure, polycrystalline thin films of BiNbO4 on Si(100) substrates using pulsed laser ablation. The deposition conditions were optimized with respect to substrate temperature, laser parameters, and the ambient oxygen pressure. The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, and Raman spectroscopy, while their microstructure was studied by atomic force microscopy and scanning electron microscopy. Dielectric hysteresis studies indicated that films with a thickness below ≈250 nm are ferroelectric, while thicker ones are antiferroelectric.

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11

Astafev, Pavel, Aleksey Pavelko, Konstantin Andryushin, Alexander Lerer, Jakov Reizenkind i Larisa Reznichenko. "Microwave Electrodynamic Study on Antiferroelectric Materials in a Wide Temperature Range". Materials 15, nr 24 (10.12.2022): 8834. http://dx.doi.org/10.3390/ma15248834.

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The electrodynamic properties of lead zirconate titanate ceramic solid solutions, exhibiting ferro-antiferroelectric phase transition, are investigated at microwave frequencies in a wide temperature range. Significant changes in the electrodynamic response are found, presumably associated with structural rearrangements accompanying the sequence of phase transitions between para-, ferro-, and antiferroelectric states. The phenomena observed in the experiments are considered under conditions of changing temperature and concentrations of the components; several independent measurement techniques were used for their unambiguous identification.

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12

Pan, Tianze, Ji Zhang, Dongxiao Che, Zhengyu Wang, Jiajia Wang, Jing Wang i Yaojin Wang. "Improved capacitive energy storage in sodium niobate-based relaxor antiferroelectric ceramics". Applied Physics Letters 122, nr 7 (13.02.2023): 072902. http://dx.doi.org/10.1063/5.0134282.

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Ceramic-based dielectric capacitors have become an attractive issue due to their wide applications in current pulsed-/high-power electronic devices. Antiferroelectric ceramics generally exhibit ultrahigh energy density owing to their giant polarization activated by antiferroelectric–ferroelectric phase transition under a high electric field but suffer from large hysteresis, meanwhile giving rise to low efficiency. Herein, by introducing perovskite compound Sr(Fe0.5Ta0.5)O3 into an antiferroelectric NaNbO3 matrix, a stabilized antiferroelectric phase and an improved relaxor behavior are observed. That is, relaxor antiferroelectric ceramics are constructed. Accordingly, a double polarization–electric field ( P–E) loop becomes slimmer with increasing incorporation of dopants, leading to an ultrahigh recoverable energy density of 11.5 J/cm3, an energy storage efficiency of 86.2%, outstanding frequency/cycling/thermal reliability, and charge–discharge properties in 0.90NaNbO3-0.10Sr(Fe0.5Ta0.5)O3 ceramics. This work reveals that inducing the relaxor behavior in antiferroelectric materials is an effective route to improve their capacitive energy storage.

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13

Viehland, Dwight, Z. Xu i X. H. Dai. "TEM studies of modified lead zirconate titanate ceramics". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 552–53. http://dx.doi.org/10.1017/s0424820100170499.

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The microstructural, structural, dielectric, and polarization properties of antiferroelectric PZST and PLZT ceramics have been studied as a function of Sn and La-contents, respectively. These materials are of interests for applications as antiferroelectric-ferroelectric phase switching actuators, however their transformational characteristics are currently unknown. In these systems, various ferroelectric and antiferroelectric phases have been reported over a narrow compositional range. These include: antiferroelectric orthorhombic, antiferroelectric tetragonal, rhombohedral ferroelectric, multi-cell cubic paraelectric, and single-cell cubic paraelectric. Dielectric anomalies are not observed at the ferroelectric to antiferroelectric or antiferroelectric to multicell cubic transformations. The maximum dielectric constant is found near the temperature of the formation of the multicell cubic state, which is ˜30°C above the transformation into the antiferroelectric tetragonal state. No macroscopic symmetry changes are observed near the temperature of the dielectric maximum.The compositional systems investigated in this study were (Pb1-xLax)(Zr1-yTiy)O3 (PLZT x/(1-y)/y) and Pb(0.98)Nb0.02[(Zr1-x,Snx)1-yTiy]1-zO3 (PZST x/y/2). The compositions chosen for study were PLZT 0/95/, 1/95/5, 2/95/5, 3/95/5 and 5/95, and PZST 45/0/2, 45/3/2, 45/6/2, and 45/9/2.

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14

Soumahoro, K., i J. Pouget. "Electroacoustic properties for deformable antiferroelectric materials". Journal of the Acoustical Society of America 96, nr 6 (grudzień 1994): 3558–67. http://dx.doi.org/10.1121/1.411458.

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15

Dąbrowski, R., J. Gąsowska, J. Otón, W. Piecek, J. Przedmojski i M. Tykarska. "High tilted antiferroelectric liquid crystalline materials". Displays 25, nr 1 (maj 2004): 9–19. http://dx.doi.org/10.1016/j.displa.2004.04.002.

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16

Gao, Jing, Wei Li, Jue Liu, Qian Li i Jing-Feng Li. "Local Atomic Configuration in Pristine and A-Site Doped Silver Niobate Perovskite Antiferroelectrics". Research 2022 (25.02.2022): 1–10. http://dx.doi.org/10.34133/2022/9782343.

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Antiferroelectrics have attracted increasing research interests in recent years due to both their great potential in energy storage applications and intriguing structural characteristics. However, the links between the electrical properties and structural characteristics of distorted perovskite antiferroelectrics are yet to be fully deciphered. Here, we adopt local-structure methods to elucidate the nanoscale atomic structure of AgNbO3-based antiferroelectrics and their structural evolution upon La doping. The local structural features including interatomic distance distributions and atomic displacements have been analyzed using neutron small-box pair distribution function (PDF) refinement in conjunction with large-box Reverse Monte Carlo modelling. Our results highlight the correlation of cation displacements in AgNbO3 and its disruption by the incorporation of La, apparently in corroboration with the observed anomalous dielectric properties. Spatial ordering of cation vacancies is observed in La-doped AgNbO3 samples, which coordinates with oxygen octahedral tilting to relieve lattice strain. These results provide renewed insights into the atomic structure and antiferroelectric phase instabilities of AgNbO3 and relevant perovskite materials, further lending versatile opportunities for enhancing their functionalities.

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17

Wang, Erping, Liqin Yue, Yuanhong Chu, Caixia Sun, Jinyu Zhao, Siyu Zhang, Jiale Liu, Yangyang Zhang i Ling Zhang. "High Energy Storage Performance in Pb1−xLax(Hf0.45Sn0.55)0.995O3 Antiferroelectric Ceramics". Crystals 14, nr 8 (17.08.2024): 732. http://dx.doi.org/10.3390/cryst14080732.

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Energy storage efficiency (η) and large recoverable energy density (Wre) are necessary for antiferroelectric materials in order to develop antiferroelectric-based dielectric capacitors with exceptional energy storage capacity. In the present paper, the effect of doping La3+ on the energy storage capacity of Pb1−xLax(Hf0.45Sn0.55)0.995O3 antiferroelectric ceramics was studied. Adjusting the content of La and changing the phase structure of PLHS from antiferroelectric to relaxor ferroelectric gradually, which narrowed its hysteresis loop, yielded a high energy storage efficiency of 81.9% and the maximum breakdown field strength of 200 kV/cm when x = 2 mol%. In addition, the recoverable energy density and energy storage efficiency both showed excellent temperature stability and frequency stability in the temperature range of 10–110 °C and the frequency range of 10–100 Hz, suggesting that Pb0.98La0.02(Hf0.45Sn0.55)0.995O3 are favorable materials candidates for the preparation of pulsed-power capacitors that can be used in a wide range of conditions.

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18

Xu, Z., Dwight Viehland i D. A. Payne. "An incommensurate-commensurate phase transformation in antiferroelectric tin-modified lead zirconate titanate". Journal of Materials Research 10, nr 2 (luty 1995): 453–60. http://dx.doi.org/10.1557/jmr.1995.0453.

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Antiferroelectric tin-modified lead zirconate titanate ceramics (PZST), with 42 at. % Sn and 4 at. % Ti, were studied by hot- and cold-stage transmission electron microscopy and selected area electron diffraction techniques. The previously reported tetragonal antiferroelectric state is shown to be an incommensurate orthohombic state. Observations revealed the existence of incommensurate 1/x 〈110〉 superlattice reflections below the temperature of the dielectric maximum. The modulation wavelength for this incommensurate structure was found to be metastably locked-in near and below room temperature. An incommensurate-commensurate orthorhombic antiferroelectric transformation was then observed at lower temperatures. However, an intermediate condition was observed over a relatively wide temperature range which was characterized by an intergrowth of 〈110〉 structural modulations, which was strongly diffuse along the 〈110〉. These structural observations were correlated with dispersion in the dielectric properties in the same temperature range. No previous reports of an incommensurate orthorhombic antiferroelectric state or an incommensurate-commensurate orthorhombic antiferroelectric transformation are known to exist.

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19

An, Kun, Xuechen Jin, Jiang Meng, Xiao Li i Yifeng Ren. "Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers". Sensors 18, nr 5 (13.05.2018): 1542. http://dx.doi.org/10.3390/s18051542.

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Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

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20

Yu, Huifen, Liang Chen, Chang Zhou i He Qi. "Negative Thermal Expansion Caused by the Antiferroelectric Phase Transition in Lead-Free Perovskite Ceramics". Crystals 13, nr 5 (1.05.2023): 751. http://dx.doi.org/10.3390/cryst13050751.

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Due to the structural stability and high adjustability of perovskite, lead-free perovskite ceramics are widely thought to be one of the most promising functional materials. In this work, an abnormal negative thermal expansion behavior with a linear expansion coefficient of −54.95 ppm/K is achieved in the (1-x)NaNbO3-xCaZrO3 system by driving the antiferroelectric phase transition from orthorhombic phase and tetragonal phase. The NTE mechanism is verified by temperature-dependent high-energy synchrotron X-ray diffraction, dielectric spectra, and Raman scattering spectroscopy. The relationship between the antiferroelectric phase transition and negative thermal expansion behavior is systematically revealed by analyzing the evolution of the phase structure with temperature. This novel negative thermal expansion feature caused by the antiferroelectric phase transition provides new guidance for designing more negative thermal expansion materials.

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Nishiyama, Isa. "Antiferroelectric liquid crystals". Advanced Materials 6, nr 12 (grudzień 1994): 966–70. http://dx.doi.org/10.1002/adma.19940061215.

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Ma, Qingzhu, Xiang Li, Yanle Zhang, Zhijin Duo, Suwei Zhang i Lei Zhao. "Dielectric and Antiferroelectric Properties of AgNbO3 Films Deposited on Different Electrodes". Coatings 12, nr 12 (25.11.2022): 1826. http://dx.doi.org/10.3390/coatings12121826.

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AgNbO3 antiferroelectric materials have become a hot topic due to their typical double polarization–electric field loops. AgNbO3 films usually exhibit superior properties to bulks. In this work, AgNbO3 films were fabricated via the pulsed laser deposition on (001) SrTiO3 substrate with (La0.5Sr0.5)CoO3, LaNiO3 and SrRuO3 bottom electrodes, in which the (La0.5Sr0.5)CoO3, LaNiO3 and SrRuO3 bottom electrodes were used to regulate the in-plane compressive stress of AgNbO3 films. It is found that AgNbO3 films deposited on (La0.5Sr0.5)CoO3, LaNiO3 and SrRuO3 bottom electrodes are epitaxial with dense microstructure. In changing the bottom electrodes from (La0.5Sr0.5)CoO3, LaNiO3 to SrRuO3, the in-plane compressive stress of AgNbO3 thin films becomes weaker, which leads to increased relative dielectric permittivity and reduced antiferroelectric–ferroelectric phase transition electric field EF from 272 kV/cm to 190 kV/cm. The reduced EF implies weakened antiferroelectric stability in AgNbO3 films. It can be seen that the antiferroelectric stability of AgNbO3 films could be regulated by changing the bottom electrodes.

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23

Apachitei, Geanina, Jonathan J. P. Peters, Ana M. Sanchez, Dong Jik Kim i Marin Alexe. "Antiferroelectric Tunnel Junctions". Advanced Electronic Materials 3, nr 7 (15.05.2017): 1700126. http://dx.doi.org/10.1002/aelm.201700126.

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24

Booth, Christopher J., David A. Dunmur, John W. Goodby, Julie Haley i Kenneth J. Toyne. "Achiral swallow-tailed materials with ‘antiferroelectric-like’ structure and their potential use in antiferroelectric mixtures". Liquid Crystals 20, nr 4 (kwiecień 1996): 387–92. http://dx.doi.org/10.1080/02678299608032051.

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Yang, Yu Hua, Zhen Yu Zhao, Xin Feng Guan i Xiu Jian Chou. "Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O₃ Antiferroelectric Thick Films for Microactuator Applications". Applied Mechanics and Materials 80-81 (lipiec 2011): 13–17. http://dx.doi.org/10.4028/www.scientific.net/amm.80-81.13.

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(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators.

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26

Castillo, Pilar, Xabier Quintana, José Otón, Roman i Marek Filipowicz. "Evaluation of Orthoconic Antiferroelectric Materials for Photonic Applications". Molecular Crystals and Liquid Crystals 422, nr 1 (styczeń 2004): 65–71. http://dx.doi.org/10.1080/15421400490502076.

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Ayyub, Pushan, Soma Chattopadhyay, R. Pinto i M. S. Multani. "Ferroelectric behavior in thin films of antiferroelectric materials". Physical Review B 57, nr 10 (1.03.1998): R5559—R5562. http://dx.doi.org/10.1103/physrevb.57.r5559.

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Chattopadhyay, Soma. "Finite size effects in ferroelectric and antiferroelectric materials". Nanostructured Materials 9, nr 1-8 (styczeń 1997): 551–54. http://dx.doi.org/10.1016/s0965-9773(97)00122-0.

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Li, Song, Hengchang Nie, Genshui Wang, Ningtao Liu, Mingxing Zhou, Fei Cao i Xianlin Dong. "Novel AgNbO3-based lead-free ceramics featuring excellent pyroelectric properties for infrared detecting and energy-harvesting applications via antiferroelectric/ferroelectric phase-boundary design". Journal of Materials Chemistry C 7, nr 15 (2019): 4403–14. http://dx.doi.org/10.1039/c9tc01014a.

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High-performance AgNbO₃-based lead-free pyroelectric materials were developed via antiferroelectric/ferroelectric phase boundary design, which can open new avenues for the application of AgNbO₃-based materials.

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Tan, Qi, Z. Xu i Dwight Viehland. "Effect of substituents with different valences on antiferroelectric stability of antiferroelectric lead zirconate ceramics". Journal of Materials Research 14, nr 11 (listopad 1999): 4251–58. http://dx.doi.org/10.1557/jmr.1999.0576.

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The effect of lower valent substituents on the stability of the antiferroelectric phase of lead zirconate was studied by dielectric spectroscopy, Sawyer–Tower polarization methods, and electron diffraction techniques. The stability of an intermediate ferroelectric phase region was found to be enhanced with increasing lower valent substitution concentration. The influences of substituents of different ionic size and valence on the stabilization of the intermediate ferroelectric phase were differentiated. In general, lower valent substituents, such as K+ and Fe3+ affected antiferroelectric phase stability more significantly than higher valent ones.

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31

Fu, Zhengqian, Xuefeng Chen, Henchang Nie, Linlin Zhang, Zhenqin Li, Ping Lu, Genshui Wang, Xianlin Dong i Fangfang Xu. "Grinding strain induced antiferroelectric-ferroelectric-antiferroelectric sandwich structure in bulk ceramics". Scripta Materialia 182 (czerwiec 2020): 27–31. http://dx.doi.org/10.1016/j.scriptamat.2020.02.040.

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Xu, Zhen, i Guo-Long Tan. "Full Antiferroelectric Performance and GMR Effect in Multiferroic La0.75Ba0.25Fe12O19 Ceramic". Applied Sciences 13, nr 9 (5.05.2023): 5718. http://dx.doi.org/10.3390/app13095718.

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The potential application of multiferroic materials in new electronic devices attracts more and more attention from people either in an academic field or industry. This paper reports that M-type lanthanum-doped barium ferrite (La0.75Ba0.25Fe12O19) demonstrates full antiferroelectric (AFE) and excellent magnetoelectric coupling effects at room temperature, while its AFE phase displays a zero macroscopic net polarization. The dramatic change in the dielectric constant near the Curie temperature far below room temperature represents the transition from ferroelectrics (FE) to antiferroelectrics. The fully separated double electric polarization hysteresis (P–E) loops confirmed its AFE performance. Its EF and EA are located at 1100 kV/cm and 850 kV/cm, respectively. The large M–H loop showed a strong magnetic property simultaneously. The UV-Vis-NIR optical spectrum revealed that La0.75Ba0.25Fe12O19 is also a semiconductor, whose direct bandgap energy (Eg) was determined to be 1.753 eV. Meanwhile, La0.75Ba0.25Fe12O19 showed strong ME coupling and a GMR effect. A 1.1 T magnetic field reduced its resistance by 110% at 30 kHz. The multiple functions combined in one phase would create new options for high energy storage capacitors, microactuators, pyroelectric safety sensors, cooling devices, and pulsed power generators and so on, as well as great opportunities for generating new electronic devices with active magnetoelectric coupling effects.

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Saha, Rony, Chenrun Feng, Alexey Eremin i Antal Jákli. "Antiferroelectric Bent-Core Liquid Crystal for Possible High-Power Capacitors and Electrocaloric Devices". Crystals 10, nr 8 (30.07.2020): 652. http://dx.doi.org/10.3390/cryst10080652.

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We present small-angle X-ray scattering, polarized optical microscopy and electric current measurements of a sulfur-containing bent-core liquid crystal material for characterization of the layer and director structures, thermally and electrically driven transitions between antiferroelectric and ferroelectric structures and switching properties. It was found that the material has polarization-modulated homochiral synclinic ferroelectric (SmCsPFmod), homochiral anticlinic antiferroelectric (SmCaPA) and racemic synclininc antiferroelectric (SmCsPA) structures that can be reversibly switched between each other either thermally and/or electrically. High switching polarization combined with softness of the liquid crystalline structure makes this compound a good candidate for applications in high-power capacitors and electrocaloric devices.

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Wu, Longwen, Guitian Lan, Ziming Cai, Lihua Zhao, Jian Lu i Xiaohui Wang. "Concurrent achievement of giant energy density and ultrahigh efficiency in antiferroelectric ceramics via core–shell structure design". Applied Physics Letters 120, nr 17 (25.04.2022): 172902. http://dx.doi.org/10.1063/5.0088282.

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The boom in high-power-density electronics and advanced pulsed power systems has led to a requirement for high-energy-density dielectric capacitors, for which the key enabler is the availability of dielectric materials with high energy densities and high efficiencies. Although antiferroelectric ceramics are promising dielectric materials with high energy densities, they have low efficiencies. In this study, we address this problem through the core–shell structure design. A phase-field model is developed by considering the core as antiferroelectric and the shell as linear dielectric, and the polarization hysteresis loops are determined. The results show that the polarization–electric field loop of the core–shell sample is slanted, with a delayed saturation polarization, decreased maximum polarization, and declined hysteresis loss compared with the pure sample. This phenomenon becomes more distinct with increasing shell fraction and decreasing shell permittivity, and vanished hysteresis is achieved in samples with a high shell fraction and a low shell permittivity. Through deconvolution, it is determined that the underlying mechanism of energy storage is the difference in the antiferroelectric polarization contribution of various shell parameters. It is found that a giant energy density of 15.5 J/cm3 and an ultrahigh efficiency of 99.7% at the saturation polarization can be achieved concurrently for a certain core–shell sample; these values considerably exceed the corresponding values (5.0 J/cm3 and 52.8%) for the pure sample. The findings of this study can serve as guidance for engineering core–shell structures, thus paving the way for enhancing the energy-storage performance of antiferroelectric ceramics.

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CORKOVIC, S., i Q. ZHANG. "CORRELATION BETWEEN CRITICAL COERCIVE FIELD AND RESIDUAL STRESS IN ANTIFERROELECTRIC PZT 95/05 FILMS". Functional Materials Letters 01, nr 01 (czerwiec 2008): 13–18. http://dx.doi.org/10.1142/s1793604708000046.

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Two types of antiferroelectric Pb ( Zr 0.95 Ti 0.05) O 3 (PZT 95/05) films having a single layer thickness of either 50 nm/layer or 200 nm/layer were fabricated and their antiferroelectric properties studied. The films were derived via chemical solution deposition (CSD). A difference in the critical coercive field between films with similar total thickness but different single layer thickness was found. Films having 200 nm thick single layers required lower electric field to switch from antiferroelectric to ferroelectric phase. The residual stress, determined for both types of films, showed much lower values for films made with 200 nm thick single layers. The other type of film (50 nm/layer) showed a thickness-dependent residual stress, coercive field and dielectric constant. At low thickness (< 0.5 μ m ) residual stress up to 600 MPa was determined, which decreased to around 180 MPa upon further thickness increase. A similar trend was found for the dielectric constant with initially high values decreasing with increasing thickness. It was concluded that there is a correlation between the residual stress and critical coercive field.

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Tyunina, M., A. Dejneka, D. Rytz, I. Gregora, F. Borodavka, M. Vondracek i J. Honolka. "Ferroelectricity in antiferroelectric NaNbO3crystal". Journal of Physics: Condensed Matter 26, nr 12 (4.03.2014): 125901. http://dx.doi.org/10.1088/0953-8984/26/12/125901.

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Kania, A., i J. Kwapulinski. "Ag1-xNaxNbO3(ANN) solid solutions: from disordered antiferroelectric AgNbO3to normal antiferroelectric NaNbO3". Journal of Physics: Condensed Matter 11, nr 45 (27.10.1999): 8933–46. http://dx.doi.org/10.1088/0953-8984/11/45/316.

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Hu, Tengfei, Zhengqian Fu, Zhenqin Li, Meng Liu, Linlin Zhang, Ziyi Yu, Xuefeng Chen i in. "Decoding the Double/Multiple Hysteresis Loops in Antiferroelectric Materials". ACS Applied Materials & Interfaces 13, nr 50 (9.12.2021): 60241–49. http://dx.doi.org/10.1021/acsami.1c19459.

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Zhou, Ziyao, Qu Yang, Ming Liu, Zhiguo Zhang, Xinyang Zhang, Dazhi Sun, Tianxiang Nan, Nianxiang Sun i Xing Chen. "Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures". SPIN 05, nr 01 (marzec 2015): 1530001. http://dx.doi.org/10.1142/s2010324715300017.

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Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE–ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60–70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice–spin, lattice–phonon, and lattice–charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

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Szarek, Michał, Ewa Topyła, Ewelina Dmochowska i Michał Czerwiński. "Influence of the polymer network on the stability of the heliconical structure in the ferro- and antiferroelectric liquid crystalline phases". Bulletin of the Military University of Technology 72, nr 4 (30.12.2023): 55–72. http://dx.doi.org/10.5604/01.3001.0054.7911.

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The use of polymer networks to stabilise chiral liquid crystalline materials (ChLC), which canfind applications in electro-optical and photonic devices, is becoming increasingly common. Stabilisingthe heliconical structure of a ChLC using a polymer network involves forming a spatial polymer matrix ina liquid crystal medium. The polymer network acts as a kind of scaffold for the liquid crystal molecules,resulting in the helix being stiffened in a particular desired state. This method of helix stabilisation hasbeen mainly used in chiral nematic liquid crystals so far. Effective stabilising the helix with a polymerin chiral smectic liquid crystals could eliminate the main drawback of these materials, i.e., the changein their performance, in electro-optical effects based on the deformation of the helix, with a changein temperature. The main parameter characterising the heliconical structure is its pitch, whose valuechanges rapidly with temperature change, in most smectic liquid crystals, which in turn translates intothe above-mentioned drawbacks. Stabilisation with the polymer should translate into temperaturestability of the helical pitch and the rest of the material parameters. This paper presents the results ofthe temperature dependence of the helical pitch before and after polymerisation of a liquid crystalmaterial with an antiferroelectric phase. A tetrafunctional monomer structurally compatible to thecomponents of the antiferroelectric mixture and, for comparison, a commercially available monomerwith a different structure were used in the study. The results relevant that stabilisation of the heliconicalstructure is easier after the use of a monomer more structurally compatible to the components ofparent liquid crystal material, while maintaining homogeneity of the heliconical structure orderingand a wide temperature range of the antiferroelectric phase occurrence.Keywords: liquid crystals, antiferroelectric phase, helical pitch, polymerization

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Artal, M. Carmen, M. Blanca Ros, José Luis Serrano, M. Rosario de la Fuente i Miguel Angel Pérez-Jubindo. "Antiferroelectric Liquid-Crystal Gels". Chemistry of Materials 13, nr 6 (czerwiec 2001): 2056–67. http://dx.doi.org/10.1021/cm001254m.

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Rudquist, Per. "Orthoconic antiferroelectric liquid crystals". Liquid Crystals 40, nr 12 (grudzień 2013): 1678–97. http://dx.doi.org/10.1080/02678292.2013.828331.

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Kłosowicz, Stanisław, i Krzysztof Czuprynski. "Electrooptics of Antiferroelectric PDLC". Molecular Crystals and Liquid Crystals 375 (2002): 195–204. http://dx.doi.org/10.1080/713738366.

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Yang, Jae Ho, Hyo Jin Kim, Woong Kil Choo i Chong Tak Lee. "Antiferroelectric superstructures of Pb2MgWO6". Ferroelectrics 152, nr 1 (luty 1994): 243–48. http://dx.doi.org/10.1080/00150199408017627.

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Kundu, Shyamal Kumar, Y. Aoki i B. K. Chaudhuri. "Dielectric spectroscopy of an antiferroelectric liquid crystal showing an antiferroelectric–ferrielectric transition". Liquid Crystals 31, nr 6 (1.06.2004): 787–90. http://dx.doi.org/10.1080/02678290410001666057.

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46

Shen, Bingzhong, Yong Li, Ningning Sun, Ye Zhao i Xihong Hao. "Enhanced energy-storage performance of an all-inorganic flexible bilayer-like antiferroelectric thin film via using electric field engineering". Nanoscale 12, nr 16 (2020): 8958–68. http://dx.doi.org/10.1039/c9nr10616b.

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Guo, Mengyao, Ming Wu, Weiwei Gao, Buwei Sun i Xiaojie Lou. "Giant negative electrocaloric effect in antiferroelectric PbZrO3 thin films in an ultra-low temperature range". Journal of Materials Chemistry C 7, nr 3 (2019): 617–21. http://dx.doi.org/10.1039/c8tc05108a.

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Eliseev, E. A., M. D. Glinchuk i A. N. Morozovska. "Antiferroelectric thin films phase diagrams". Phase Transitions 80, nr 1-2 (styczeń 2007): 47–54. http://dx.doi.org/10.1080/01411590601092654.

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Czupryński, K., K. Skrzypek, M. Tykarska i W. Piecek. "Properties of induced antiferroelectric phase". Phase Transitions 80, nr 6-7 (czerwiec 2007): 735–44. http://dx.doi.org/10.1080/01411590701340243.

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Hanrahan, Brendan, Yomery Espinal, Shi Liu, Zeyu Zhang, Alireza Khaligh, Andrew Smith i S. Pamir Alpay. "Combining inverse and conventional pyroelectricity in antiferroelectric thin films for energy conversion". Journal of Materials Chemistry C 6, nr 36 (2018): 9828–34. http://dx.doi.org/10.1039/c8tc02686f.

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