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Artykuły w czasopismach na temat „Acoustic Ellipsometry”

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Data publikacji: 9 listopada 2024

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1

Lucca, D. A., K. Herrmann, M. J. Klopfstein i F. Menelao. "Investigation of SiO₂ thin films on Si substrates for use as standards for laser-acoustic measuring devices". International Journal of Materials Research 97, nr 9 (1.09.2006): 1212–15. http://dx.doi.org/10.1515/ijmr-2006-0190.

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Abstract We report on an investigation of the suitability of SiO2 thin films for use as calibration standards for the measurement of elastic modulus by laser-acoustic measuring devices. Film thicknesses for a range of thin film standards, originally developed for the calibration of ellipsometers, were obtained by X-ray reflectometry, ellipsometry, and metrological scanning force microscopy. Using the calibrated values of film thickness, a laser-acoustic method was used to obtain the elastic moduli of the thin films. Nanoindentation of the films, performed at two different laboratories was used to provide an independent measure of the elastic modulus values. The modulus values determined by nanoindentation and the laser-acoustic method were found to agree within 4.6 %, which was within the calculated uncertainty of the measurements performed. As a result of their high homogeneity with respect to film thickness and elastic modulus, their low surface roughness and the good laser-acoustic signal quality, the thin films investigated appear to hold promise as standards for laser-acoustic measuring devices.

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2

Nolot, E., A. Lefevre i J. N. Hilfiker. "Ellipsometry characterization of bulk acoustic wave filters". physica status solidi (c) 5, nr 5 (maj 2008): 1168–71. http://dx.doi.org/10.1002/pssc.200777795.

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Urbanowicz, A. M., B. Meshman, D. Schneider i M. R. Baklanov. "Stiffening and hydrophilisation of SOG low-kmaterial studied by ellipsometric porosimetry, UV ellipsometry and laser-induced surface acoustic waves". physica status solidi (a) 205, nr 4 (kwiecień 2008): 829–32. http://dx.doi.org/10.1002/pssa.200777749.

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Plikusiene, Ieva, Vincentas Maciulis, Arunas Ramanavicius i Almira Ramanaviciene. "Spectroscopic Ellipsometry and Quartz Crystal Microbalance with Dissipation for the Assessment of Polymer Layers and for the Application in Biosensing". Polymers 14, nr 5 (7.03.2022): 1056. http://dx.doi.org/10.3390/polym14051056.

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Polymers represent materials that are applied in almost all areas of modern life, therefore, the characterization of polymer layers using different methods is of great importance. In this review, the main attention is dedicated to the non-invasive and label-free optical and acoustic methods, namely spectroscopic ellipsometry (SE) and quartz crystal microbalance with dissipation (QCM-D). The specific advantages of these techniques applied for in situ monitoring of polymer layer formation and characterization, biomolecule immobilization, and registration of specific interactions were summarized and discussed. In addition, the exceptional benefits and future perspectives of combined spectroscopic ellipsometry and QCM-D (SE/QCM-D) in one measurement are overviewed. Recent advances in the discussed area allow us to conclude that especially significant breakthroughs are foreseen in the complementary application of both QCM-D and SE techniques for the investigation of polymer structure and assessment of the interaction between biomolecules such as antigens and antibodies, receptors and ligands, and complementary DNA strands.

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5

Chen, Hanying, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert i Xia Hong. "Remote surface optical phonon scattering in ferroelectric Ba_0.6Sr_0.4TiO₃ gated graphene". Journal of Applied Physics 132, nr 15 (21.10.2022): 154301. http://dx.doi.org/10.1063/5.0106939.

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We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, with field effect mobility up to 23 000 cm2 V−1 s−1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba0.6Sr0.4TiO3, from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

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6

Plikusiene, Ieva, Vincentas Maciulis, Vilius Vertelis, Silvija Juciute, Saulius Balevicius, Arunas Ramanavicius, Julian Talbot i Almira Ramanaviciene. "Revealing the SARS-CoV-2 Spike Protein and Specific Antibody Immune Complex Formation Mechanism for Precise Evaluation of Antibody Affinity". International Journal of Molecular Sciences 24, nr 17 (25.08.2023): 13220. http://dx.doi.org/10.3390/ijms241713220.

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The profound understanding and detailed evaluation of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) spike (SCoV2-S) protein and specific antibody interaction mechanism is of high importance in the development of immunosensors for COVID-19. In the present work, we studied a model system of immobilized SCoV2-S protein and specific monoclonal antibodies by molecular dynamics of immune complex formation in real time. We simultaneously applied spectroscopic ellipsometry and quartz crystal microbalance with dissipation to reveal the features and steps of the immune complex formation. We showed direct experimental evidence based on acoustic and optical measurements that the immune complex between covalently immobilized SCoV2-S and specific monoclonal antibodies is formed in two stages. Based on these findings it was demonstrated that applying a two-step binding mathematical model for kinetics analysis leads to a more precise determination of interaction rate constants than that determined by the 1:1 Langmuir binding model. Our investigation showed that the equilibrium dissociation constants (KD) determined by a two-step binding model and the 1:1 Langmuir model could differ significantly. The reported findings can facilitate a deeper understanding of antigen–antibody immune complex formation steps and can open a new way for the evaluation of antibody affinity towards corresponding antigens.

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7

Bouzzit, Aziz, Loïc Martinez, Andres Arciniegas, Stéphane Serfaty i Nicolas Wilkie-Chancellier. "Ellipsometry of surface acoustic waves using 3D vibrometry for viscoelastic material characterization by the estimation of complex Lamé coefficients versus the frequency". Applied Acoustics 228 (styczeń 2025): 110312. http://dx.doi.org/10.1016/j.apacoust.2024.110312.

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8

Crooks, Richard M., Huey C. Yang, Laurel J. McEllistrem, Ross C. Thomas i Antonio J. Ricco. "Interactions between self-assembled monolayers and an organophosphonate Detailed study using surface acoustic wave-based mass analysis, polarization modulation-FTIR spectroscopy and ellipsometry". Faraday Discussions 107 (1997): 285–305. http://dx.doi.org/10.1039/a704586g.

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9

B, Chandar Shekar, Sulana Sundari, Sunnitha S i Sharmila C. "ARATION AND CHARACTERIZATION POLY (VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) COPOLYMER THIN FILMS FOR ORGANIC FERROELECTRIC FIELD EFFECT THIN FILM TRANSISTORS." Kongunadu Research Journal 2, nr 1 (30.06.2015): 7–10. http://dx.doi.org/10.26524/krj56.

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Polyvinylidene fluoride (PVDF) and Trifluoroethylene ((TrFE) are potential polymers which are used in acoustic transducers and electromechanical actuators because of their inherent piezoelectric response, as heat sensors because of their inherent pyroelectric response and as dielectric layer in organic thin filmtransistors. In the present study thin films of copolymer Poly(vinylidene fluoride-trifluoroethylene) were prepared by spin coating method for two different concentrations 2% to 8% and for various spin speeds from 2000 RPM to 5000 RPM. A P-type Si wafer was used as a substrate to deposit P(VDF-TrFE) thin films. 2-butanone was used as a solvent to prepare P(VDF-TrFE) solution. To study the annealing effect, the films were annealed for three different temperatures 50°C, 100° C and 175° C. Ellipsometry was used to measure the thickness of the films. The identification of the films prepared was done by using FTIR spectrophotometer. The structure of the films was studied by using small angle XRD. The morphology of the coated surface was investigated using SEM. It is observed that the thickness of the film coated depends on concentration, spin speed and annealing temperature. The XRD spectrum indicated the amorphous nature with crystallites of very low dimension. SEM micrographs also conforms the predominantly amorphous nature of the film surface. The observed smooth surface with amorphous structure indicated that these films could be used as dielectric layer in organic ferroelectric field effect thin film transistors.

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10

Nikolaev, Ivan V., Pavel V. Geydt, Nikolay G. Korobeishchikov, Aleksandr V. Kapishnikov, Vladimir A. Volodin, Ivan A. Azarov, Vladimir I. Strunin i Evgeny Y. Gerasimov. "The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates". Nanomaterials 12, nr 4 (17.02.2022): 670. http://dx.doi.org/10.3390/nano12040670.

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In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.

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11

Dautriat, Margaux, Pierre Montméat i Frank Fournel. "(First Best Student Paper Award) Polymer to Silicon Direct Bonding for Microelectronics". ECS Meeting Abstracts MA2023-02, nr 33 (22.12.2023): 1591. http://dx.doi.org/10.1149/ma2023-02331591mtgabs.

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Direct bonding consists in spontaneously bringing into contact two solid surfaces without any intermediate liquid. A liquid is defined here as a being thick enough to have fluid characteristics. Silicon direct bonding is widely used in microelectronics, for instance for the production of silicon-on-insulator substrates (for transistor manufacturing). Direct bonding can be performed between identical surfaces, for example, two silicon substrates. However, direct bonding is also feasible with two different surfaces such as silicon and metal. Direct bonding of two solid materials requires very strict surface conditions such as planarity, particle cleanliness and low surface roughness. The surface Root Mean Square (RMS) roughness should be lower than 0.5 nm for hydrophilic silicon bonding and 0.3 nm for hydrophobic silicon bonding [1]. We will focus here on direct bonding with polymer films. It is a quite innovative bonding as polymers are materials with very different properties compared to silicon. They are indeed not crystalline, much less rigid and most of the time hydrophobic. Five different polymers thin films are used to evaluate direct bonding with polymers: LOR2A, BARC AR26N, SOC HM8102, TOK TDMR and LTC9310. Thicknesses are between 32 nm and 6 µm. Those polymers are deposited on 200 or 300 mm diameter Si substrates. First of all, polymers are characterized by Fourier-Transform Infrared Spectroscopy (FTIR), spectroscopic ellipsometry and Thermogravimetric Analysis (TGA). Contact angles of the different polymers are in the 58° to 77° range, a feature which is a characteristic of hydrophobic surfaces. For comparison, the contact angle is lower than 5° for hydrophilic silicon (SiO2) and 78° for hydrophobic H-passivated silicon (Si). The surface roughness of the five different polymers is evaluated by Atomic Force Microscopy (AFM), with RMS roughness ranging from 0.29 to 0.40 nm found. Such values are in-between the 0.3 nm and 0.5 nm thresholds for hydrophobic and hydrophilic surface bonding, respectively. However, direct bonding is feasible between polymers and hydrophilic or hydrophobic silicon surfaces in all cases. Bonding waves are observed and characterized by infrared imaging. Adhesion energies for bonding with the five different polymers are between 40 and 70 mJ/m². Meanwhile, the bonding wave velocity is in the 10-19 mm/s range. Data for polymer to hydrophilic silicon bonding are provided in Table 1. They can be compared to Table 2 data for hydrophilic and hydrophobic silicon bonding (i.e. ceramic bonding) as they have equivalent water contact angles. Polymer to Si direct bonding has higher adhesion energy and bonding wave velocity than SiO2 to Si ceramic direct bonding. The bonding interface, characterized by Scanning Acoustic Microscopy (SAM), does not reveal any bonding defects. Bonded stacks can be annealed at different temperatures. Acoustic images of bonding with BARC are shown in Figure 1 for different annealing temperatures. It is possible to measure their adherence energy after annealing using the DCB (Double Cantilever Beam) technique [2]. BARC adherence energies are given in Figure 2. As with ceramic bonding, bonding strengthens as the temperature increases. The covalent bonds density should increase during the annealing. The bonding degradation at 250°C and especially 300°C evidenced by Scanning Acoustic Microscopy (SAM) is in line with TGA findings on polymer degradation, with a threshold at 280°C. X-ray Photoelectron Spectroscopy is being used to identify interactions between the silicon surface and the polymer. A mechanism will be proposed for these innovative bondings. [1] H. Moriceau et al., « Overview of recent direct wafer bonding advances and applications », Adv. Nat. Sci. Nanosci. Nanotechnol., vol. 1, no 4, p. 043004, févr. 2011, doi: 10.1088/2043-6262/1/4/043004. [2] W. P. Maszara, G. Goetz, A. Caviglia, et J. B. McKitterick, « Bonding of silicon wafers for silicon‐on‐insulator », J. Appl. Phys., vol. 64, no 10, p. 4943-4950, nov. 1988, doi: 10.1063/1.342443. Figure 1

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12

Jenkins, T. E. "Multiple-angle-of-incidence ellipsometry". Journal of Physics D: Applied Physics 32, nr 9 (1.01.1999): R45—R56. http://dx.doi.org/10.1088/0022-3727/32/9/201.

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13

Deng, Yuanlong. "Polarization mixing error in transmission ellipsometry with two acousto-optical modulators". Optical Engineering 47, nr 7 (1.07.2008): 075601. http://dx.doi.org/10.1117/1.2955770.

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14

John, Joshua D., Shun Okano, Apoorva Sharma, Satoru Nishimoto, Noritoshi Miyachi, Kunitaka Enomoto, Jun Ochiai i in. "Spectroscopic ellipsometry of amorphous Se superlattices". Journal of Physics D: Applied Physics 54, nr 25 (8.04.2021): 255106. http://dx.doi.org/10.1088/1361-6463/abf228.

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15

Fukarek, W., i A. von Keudell. "A novel setup for spectroscopic ellipsometry using an acousto‐optic tuneable filter". Review of Scientific Instruments 66, nr 6 (czerwiec 1995): 3545–50. http://dx.doi.org/10.1063/1.1145466.

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16

Kerepesi, Péter, Bernhard Rebhan, Matthias Danner, Karin Stadlmann, Heiko Groiss, Peter Oberhumer, Jiri Duchoslav i Kurt Hingerl. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization". ECS Meeting Abstracts MA2023-02, nr 33 (22.12.2023): 1603. http://dx.doi.org/10.1149/ma2023-02331603mtgabs.

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There are different requirements for the production process and the final product of SiC-SiC wafer bonding. The manufacturing of devices that are sensitive to high temperature processing – due to broadened doping profiles and induced thermal stresses – requires room temperature bonding with high bond strength, while for electrical devices, it is mandatory that the bonding interface with a thin amorphous layer is oxide-free.[1] Reduced complexity of processes is also an important point for the final production. Hence, the goal of this work was to perform and characterize direct bonding of SiC-SiC without any added/deposited bonding layer. This type of bonded SiC wafers can be used for power electronics such as for the fabrication of traction inverter for automotive applications, DC/DC converter, on board charger or charging station.[2] For the wafer bonding processes standard 100 mm 4H SiC wafers were bonded with their Si-terminated faces in order to fabricate oxide-free bonds. The wafer bonding process was performed using the EVG ComBond® system: first the native oxides from both wafer surfaces were removed using an ion beam sputtering process, followed by the transfer of both wafers to the bonding process station operated in ultra-high vacuum (UHV) to significantly retard the oxidation process. Finally, the bonding process was performed at room temperature (RT). The goal of this study was to demonstrate the feasibility of the bonding process and to gain insight on the surface chemistry after activation. The investigations covered three areas: incoming inspection of the original wafer, characterization of activated single wafer and analysis of bonded wafer pairs. The focus was on compositional, chemical, mechanical and morphological analysis of the surfaces and of the bonded interfaces. In the case of single wafers, the focus of the incoming inspection was on whether the wafers fulfill the requirements of wafer bonding, and on the characterization of activated wafers to measure the surface modifications. Atomic force microscopy (AFM), white light interferometry (WLI) and spectroscopic ellipsometry (SE) were used to determine the surface roughness, the wafer topography and the surface layer structure, respectively. All three parameters are essential for successful RT SiC-SiC wafer bonding. The change of the surface chemistry was investigated by angle resolved x-ray photoelectron spectroscopy (AR-XPS). The quality of the bonded wafers and the bonding energy were verified using scanning acoustic microscopy (SAM) measurements (Fig. 1) as well as the Maszara blade test. Furthermore, cross-section transmission electron microscopy (X-TEM) showed a bonding interface with a thin amorphous layer and no noticeable additional oxygen containing layer (Fig. 2). In order to gain quantitative elemental distributions of oxygen and argon, energy dispersive x-ray spectroscopy (EDXS) was applied. The work reported is a demonstration of the capability of the different characterization methods regarding SiC-SiC wafer bonding. Future work will focus on the investigation of the bonded interface characteristics in the function of the bonding process parameters and the annealing conditions. [1] F. Mu, M. Fujino, T. Suga, Y. Takahashi, H. Nakazawa and K. Iguchi, "Wafer bonding of SiC-SiC and SiC-Si by modified surface activated bonding method" 2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC), Kyoto, Japan, 2015, pp. 542-545, doi: 10.1109/ICEP-IAAC.2015.7111073. [2] Tsunenobu Kimoto, "Material science and device physics in SiC technology for high-voltage power devices" Jpn. J. Appl. Phys. 54 040103 (2015), doi: 10.7567/JJAP.54.040103. Figure 1

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Devos, A., F. Chevreux, C. Licitra, A. Chargui i L. L. Chapelon. "Elastic and thermo-elastic characterizations of thin resin films using colored picosecond acoustics and spectroscopic ellipsometry". Photoacoustics 31 (czerwiec 2023): 100498. http://dx.doi.org/10.1016/j.pacs.2023.100498.

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18

Lyzwa, F., P. Marsik, V. Roddatis, C. Bernhard, M. Jungbauer i V. Moshnyaga. "In situmonitoring of atomic layer epitaxy via optical ellipsometry". Journal of Physics D: Applied Physics 51, nr 12 (6.03.2018): 125306. http://dx.doi.org/10.1088/1361-6463/aaac64.

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Lizana, A., M. Foldyna, M. Stchakovsky, B. Georges, D. Nicolas i E. Garcia-Caurel. "Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry". Journal of Physics D: Applied Physics 46, nr 10 (8.02.2013): 105501. http://dx.doi.org/10.1088/0022-3727/46/10/105501.

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Wang, Yakun, Gengzhao Xu, Sha Han, Kebei Chen, Chunyu Zhang, Wentao Song, Jianfeng Wang, Zhenghui Liu i Ke Xu. "The spectroscopic ellipsometry measurement of non-polar freestanding GaN: comparison between isotropic and anisotropic models". Journal of Physics D: Applied Physics 55, nr 23 (11.03.2022): 235104. http://dx.doi.org/10.1088/1361-6463/ac598f.

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Abstract For anisotropic materials, the pseudo-dielectric function (DF) from isotropic model is often applied in spectroscopic ellipsometry data analysis instead of the DF from anisotropic model because of its simplicity. Whether this approximation is applicable depends on the discrepancy between the pseudo-DF and the DF, which we find to be related to the illumination configuration greatly. For the ellipsometry spectra obtained from a non-polar freestanding GaN in two configurations with the c-axis perpendicular and parallel to the incident plane respectively, both anisotropic model and isotropic model are used to compare the difference between the fitted absorption coefficient and pseudo-absorption coefficient. As a consequence, the discrepancy between the two coefficients is less than 10 % even at the absorption edge when electric field is perpendicular to the c-axis, while the discrepancy exceeds 40 % at the absorption edge when electric field is parallel to the c-axis. These results indicate that the approximation of using isotropic model instead of anisotropic model is reasonable in the former configuration, while it is not applicable in the latter configuration and will render an overestimation of bandgap. The above two different discrepancies could be explained by the first-order term approximation of pseudodielectric function. We further demonstrate the necessity for anisotropic model by comparing the deviations of the crystal-field splitting obtained from anisotropic and isotropic model with the theoretical value respectively.

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Macková, Anna, Petr Malinský, Adéla Jagerová, Romana Mikšová, Ondrej Lalik, Pavla Nekvindová, Jan Mistrík i in. "Energetic Au ion beam implantation of ZnO nanopillars for optical response modulation". Journal of Physics D: Applied Physics 55, nr 21 (24.02.2022): 215101. http://dx.doi.org/10.1088/1361-6463/ac5486.

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Abstract Nanopillars of ZnO were implanted with Au-400 keV ions at various ion fluences from 1 × 1015 cm−2 to 1 × 1016 cm−2 and subsequently annealed at 750 °C for 15 min in order to reduce the implantation damage and to support Au nanoparticle (NP) aggregation. It was found that implantation-induced effects and thermal effects influence the Au NP coalescence as well as the quality of the ZnO nanopillars. Rutherford Back-Scattering spectrometry (RBS) showed the broader Au-depth profiles than it was theoretically predicted, but the Au-concentration maximum agrees well with prediction taking into account the effective ZnO layer density. The implantation at the higher fluences induced the morphology modification of the nanopillar layer evidenced by RBS and scanning electron microscopy (SEM). An indirect evidence of this effect was given by optical ellipsometry due to gradual refractive index changes in the ZnO nanopillars with the increased Au-ion fluence. Optical characterization of the Au-implanted and annealed nanopillars performed by means of photoluminescence (PL) and diffuse-reflectance spectroscopy (DRS) evidenced the surface plasmon resonance (SPR) activity of the embedded Au NPs. The SPR-enhanced scattering and PL emission observed in the spectral range 500–650 nm are ascribed to Au NPs or more complex Au-clusters. In addition, the ellipsometry measurements of extinction coefficient are found to corroborate well results from DRS, both indicating increase of SPR effect with the increase of Au-ion fluence and after the post-annealing.

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Jin, G., J. P. Roger, A. C. Boccara i J. L. Stehle. "Probing dynamic processes in multilayered structures by stimulated spectroscopic ellipsometry". Journal of Physics D: Applied Physics 26, nr 11 (14.11.1993): 2096–99. http://dx.doi.org/10.1088/0022-3727/26/11/039.

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He, Qiong, Xiangdong Xu, Yu Gu, Meng Wang, Jie Yao, Yadong Jiang, Minghui Sun i in. "Vanadium oxide–carbon nanotube composite films characterized by spectroscopic ellipsometry". Journal of Physics D: Applied Physics 49, nr 40 (13.09.2016): 405105. http://dx.doi.org/10.1088/0022-3727/49/40/405105.

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Easwarakhanthan, T. "Nulling ellipsometry in the study of chemically treated Si surfaces". Journal of Physics D: Applied Physics 30, nr 7 (7.04.1997): 1151–56. http://dx.doi.org/10.1088/0022-3727/30/7/013.

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Hu, Zhigao, Genshui Wang, Zhiming Huang, Xiangjian Meng i Junhao Chu. "Infrared optical properties of Bi3.25La0.75Ti3O12ferroelectric thin films using spectroscopic ellipsometry". Journal of Physics D: Applied Physics 35, nr 24 (28.11.2002): 3221–24. http://dx.doi.org/10.1088/0022-3727/35/24/311.

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Russo, O. L. "An accurate ellipsometric reflectance ratio method". Journal of Physics D: Applied Physics 18, nr 9 (14.09.1985): 1723–30. http://dx.doi.org/10.1088/0022-3727/18/9/003.

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Drury, M. R., i D. Bloor. "Measurement o the optical constants of polydiacetylene toluene sulphonate by ellipsometry". Journal of Physics D: Applied Physics 23, nr 1 (14.01.1990): 108–11. http://dx.doi.org/10.1088/0022-3727/23/1/018.

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Stewart, C. E., I. R. Hooper i J. R. Sambles. "Surface plasmon differential ellipsometry of aqueous solutions for bio-chemical sensing". Journal of Physics D: Applied Physics 41, nr 10 (1.05.2008): 105408. http://dx.doi.org/10.1088/0022-3727/41/10/105408.

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Stagg, B. J., i T. T. Charalampopoulos. "A method to account for window birefringence effects on ellipsometry analysis". Journal of Physics D: Applied Physics 26, nr 11 (14.11.1993): 2028–35. http://dx.doi.org/10.1088/0022-3727/26/11/029.

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Chandra, Sharat, S. Tripura Sundari, G. Raghavan i A. K. Tyagi. "Optical properties of CdTe nanoparticle thin films studied by spectroscopic ellipsometry". Journal of Physics D: Applied Physics 36, nr 17 (21.08.2003): 2121–29. http://dx.doi.org/10.1088/0022-3727/36/17/315.

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Chen, Chen, Dan Wu, Meng Yuan, Chao Yu, Jian Zhang, Chuannan Li i Yu Duan. "Spectroscopic ellipsometry study of CsPbBr3 perovskite thin films prepared by vacuum evaporation". Journal of Physics D: Applied Physics 54, nr 22 (9.03.2021): 224002. http://dx.doi.org/10.1088/1361-6463/abe821.

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Langereis, E., S. B. S. Heil, H. C. M. Knoops, W. Keuning, M. C. M. van de Sanden i W. M. M. Kessels. "In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition". Journal of Physics D: Applied Physics 42, nr 7 (13.03.2009): 073001. http://dx.doi.org/10.1088/0022-3727/42/7/073001.

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Leick, N., J. W. Weber, A. J. M. Mackus, M. J. Weber, M. C. M. van de Sanden i W. M. M. Kessels. "In situspectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd". Journal of Physics D: Applied Physics 49, nr 11 (17.02.2016): 115504. http://dx.doi.org/10.1088/0022-3727/49/11/115504.

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34

Chao, Y. F., Wen-Chi Lee, C. S. Hung i J. J. Lin. "A three-intensity technique for polarizer-sample-analyser photometric ellipsometry and polarimetry". Journal of Physics D: Applied Physics 31, nr 16 (21.08.1998): 1968–74. http://dx.doi.org/10.1088/0022-3727/31/16/005.

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Ovchinnikov, I. S. "Evaluation methods of mechanical properties for low-k dielectrics". Russian Technological Journal 9, nr 3 (28.06.2021): 40–48. http://dx.doi.org/10.32362/2500-316x-2021-9-3-40-48.

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This review introduces the study of state-of-art methods for assessing the mechanical properties of insulating materials with low dielectric constant. The main features of measuring Young’s modulus of thin films insulating materials with low dielectric constant are determined by usage of Brillouin light scattering, surface acoustic wave spectroscopy, picosecond laser-acoustic method, ellipsometric porosimetry, nanoindentation and atomic force microscopy in various modes. The author estimated the optimum lateral and optimum depth resolution for each above method. The review analyzes the degree of sample preparation complexity for the measurements by these methods and describes what methods of measurement are destructive for the samples. Besides, the review makes a comparison for the results of evaluating Young’s modulus of insulating materials with low dielectric constant achieved by different methods. Comparative analysis of the methods for assessing mechanical properties lead us to the conclusion that the method of atomic force microscopy is superior to other methods described above, both in lateral (8 nm) and optimum depth (10 nm) resolution. It is shown that due to the small impact force of the atomic force microscope probe on the surface, the method does not have a destructive effect on the sample. In addition, there is no need to create special conditions for the experiment (e.g., the cleanliness level of the premises, the possibility of an experiment under environmental conditions, etc.). This makes the experiment relatively simple in terms of preparing the object of research. It has been also established that the method of atomic force microscopy in the mode of quantitative nanomechanical mapping allows forming a map of the distribution of the Young’s modulus of the insulating material as part of the metallization system of integrated circuits.

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36

Groth, Sebastian, Franko Greiner, Benjamin Tadsen i Alexander Piel. "Kinetic Mie ellipsometry to determine the time-resolved particle growth in nanodusty plasmas". Journal of Physics D: Applied Physics 48, nr 46 (21.10.2015): 465203. http://dx.doi.org/10.1088/0022-3727/48/46/465203.

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Filippov, V. V., I. D. Lomako i N. N. Sender. "Optical constants of TbFeO3measured by the immersion ellipsometry method at wavelength 0.63 mu m". Journal of Physics D: Applied Physics 27, nr 9 (14.09.1994): 1964–67. http://dx.doi.org/10.1088/0022-3727/27/9/023.

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Shirafuji, T., H. Motomura i K. Tachibana. "Fourier transform infrared phase-modulated ellipsometry for in situ diagnostics of plasma–surface interactions". Journal of Physics D: Applied Physics 37, nr 6 (24.02.2004): R49—R73. http://dx.doi.org/10.1088/0022-3727/37/6/r01.

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Martín Valderrama, Carmen, Mikel Quintana, Ane Martínez-de-Guerenu, Tomoki Yamauchi, Yuki Hamada, Yuichiro Kurokawa, Hiromi Yuasa i Andreas Berger. "Insertion layer magnetism detection and analysis using transverse magneto-optical Kerr effect (T-MOKE) ellipsometry". Journal of Physics D: Applied Physics 54, nr 43 (10.08.2021): 435002. http://dx.doi.org/10.1088/1361-6463/ac0d2a.

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40

Boulouz, A., A. En Nacri, F. Pascal-Delannoy, B. Sorli i L. Koutti. "Spectroscopic ellipsometry study ofxPbO–(1 −x)TiO2thin films elaborated by mixed reactive thermal co-evaporation". Journal of Physics D: Applied Physics 42, nr 24 (30.11.2009): 245304. http://dx.doi.org/10.1088/0022-3727/42/24/245304.

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41

Hikino, Shin-ichi, i Sadao Adachi. "Structural changes in ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry". Journal of Physics D: Applied Physics 37, nr 12 (27.05.2004): 1617–23. http://dx.doi.org/10.1088/0022-3727/37/12/005.

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Chen, Shuai, Xiong Zhang, Aijie Fan, Hu Chen, Cheng Li, Zhe Chuan Feng, Jiadong Lyu, Zhe Zhuang, Guohua Hu i Yiping Cui. "Characterization of optical properties and thermo-optic effect for non-polar AlGaN thin films using spectroscopic ellipsometry". Journal of Physics D: Applied Physics 53, nr 20 (18.03.2020): 205104. http://dx.doi.org/10.1088/1361-6463/ab77e2.

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Kwon, Oh-Tae, Geonwoo Kim, Hyungjin Bae, Jaeyeol Ryu, Sikwan Woo i Byoung-Kwan Cho. "Development of a Mercury Bromide Birefringence Measurement System Based on Brewster’s Angle". Sensors 23, nr 9 (23.04.2023): 4208. http://dx.doi.org/10.3390/s23094208.

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Mercury bromide (Hg2Br2) has been used to develop acousto-optic tunable filters (AOTFs) because it has several advantages, including a high refractive index, a broad optical bandwidth, and a relatively high figure of merit. Therefore, the measurement of its birefringence is a highly important factor for ensuring AOTF quality. However, for single crystals, it is difficult (at the millimeter scale) to quantify the birefringence using an ellipsometer, as this equipment is only designed to conduct measurements on thin films. In this study, a simple birefringence measurement system for Hg2Br2 was developed based on Brewster’s angle at the millimeter scale. The planar distributions of the Hg2Br2 crystal along the (100), (010), and (001) planes were used in the experiments. The developed measurement system can measure the reflected light intensity of the Hg2Br2 crystal depending on the incidence angles (rotations at 0.01125° steps) and can calculate the ordinary and extraordinary refractive indices and birefringence. The calculated birefringence of the Hg2Br2 crystal was 0.8548; this value exhibits an error of 0.64% compared with a value of 0.86 reported in the literature. The developed measurement system demonstrates the ability to be used to evaluate the quality of birefringent single crystals.

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Liu, H. P., F. Lu, X. Z. Liu, R. F. Zhang, Q. Song, X. L. Wang, X. J. Ma, T. L. Yang, Y. B. Lv i Y. H. Li. "Reconstruction of refractive index profiles of 3 MeV O2+ion-implanted MgO-doped LiNbO3using wet etching and ellipsometry". Journal of Physics D: Applied Physics 41, nr 6 (22.02.2008): 065302. http://dx.doi.org/10.1088/0022-3727/41/6/065302.

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Leick, N., J. W. Weber, A. J. M. Mackus, M. J. Weber, M. C. M. van de Sanden i W. M. M. Kessels. "Erratum:In situspectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd (2016J. Phys. D: Appl. Phys.49115504)". Journal of Physics D: Applied Physics 49, nr 26 (26.05.2016): 269601. http://dx.doi.org/10.1088/0022-3727/49/26/269601.

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46

Oblak, E., P. Riego, A. Garcia-Manso, A. Martínez-de-Guerenu, F. Arizti, I. Artetxe i A. Berger. "Ultrasensitive transverse magneto-optical Kerr effect measurements using an effective ellipsometric detection scheme". Journal of Physics D: Applied Physics 53, nr 20 (12.03.2020): 205001. http://dx.doi.org/10.1088/1361-6463/ab7546.

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Peng, Liang, Kai Jiang, Jinzhong Zhang, Zhigao Hu, Genshui Wang, Xianlin Dong i Junhao Chu. "Temperature-dependent phonon Raman scattering and spectroscopic ellipsometry of pure and Ca-doped SrxBa1−xNb2O6ferroelectric ceramics across the phase transition region". Journal of Physics D: Applied Physics 49, nr 3 (22.12.2015): 035307. http://dx.doi.org/10.1088/0022-3727/49/3/035307.

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48

Bousquet, Angélique, Fadi Zoubian, Joël Cellier, Christine Taviot-Gueho, T. Sauvage i Eric Tomasella. "Structural and ellipsometric study on tailored optical properties of tantalum oxynitride films deposited by reactive sputtering". Journal of Physics D: Applied Physics 47, nr 47 (5.11.2014): 475201. http://dx.doi.org/10.1088/0022-3727/47/47/475201.

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Ravisy, W., M. Richard-Plouet, B. Dey, S. Bulou, P. Choquet, A. Granier i A. Goullet. "Unveiling a critical thickness in photocatalytic TiO2 thin films grown by plasma-enhanced chemical vapor deposition using real time in situ spectroscopic ellipsometry". Journal of Physics D: Applied Physics 54, nr 44 (31.08.2021): 445303. http://dx.doi.org/10.1088/1361-6463/ac1ec1.

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Agarwal, Lucky, K. Sambasiva Rao, Anshika Srivastava i Shweta Tripathi. "Ytterbium doped ZnO nanolaminated planar waveguide for ring resonator applications". Journal of Physics D: Applied Physics 55, nr 22 (7.03.2022): 225106. http://dx.doi.org/10.1088/1361-6463/ac57dd.

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Abstract In the present paper, optical and structural properties of Yb doped ZnO (YZO) are studied for different Yb molar concentrations. The YZO thin films are deposited over the silicon substrate via the sol-gel spin coating method. The range of Yb doping content (concentration) is 0 mol% to 1.5 mol% in ZnO. The morphological variations of the deposited thin film are studied using XRD, FE-SEM, atomic force microscopy, and Ellipsometer. The obtained results indicate that the YZO thin film possesses a single crystalline structure with (1 0 0) as the preferential orientation. All samples have a smooth, dense structure and are free of pinholes. A detailed optical result showed a favorable behavior of YZO thin film for integrated photonic devices. Hence, an optical ring resonator is simulated using MODE and FDTD tool of Lumerical to validate the experimental results. The eigen mode solver is incorporated in MODE (wavelength ranging from 300 to 800 nm) to compute refractive index, propagation constant, group velocity, losses, dispersion and transmission intensity. Furthermore, quality factor, free spectral range and fullwidth at half-maximum of the ring resonator are evaluated using FDTD.

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