Gotowe bibliografie tematyczne / 2D material technology

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Gotowa bibliografia na temat „2D material technology”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "2D material technology"

Yang, Hongyan, Yunzheng Wang, Zian Cheak Tiu, Sin Jin Tan, Libo Yuan i Han Zhang. "All-Optical Modulation Technology Based on 2D Layered Materials". Micromachines 13, nr 1 (7.01.2022): 92. http://dx.doi.org/10.3390/mi13010092.

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In the advancement of photonics technologies, all-optical systems are highly demanded in ultrafast photonics, signal processing, optical sensing and optical communication systems. All-optical devices are the core elements to realize the next generation of photonics integration system and optical interconnection. Thus, the exploration of new optoelectronics materials that exhibit different optical properties is a highlighted research direction. The emerging two-dimensional (2D) materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs) and MXene have proved great potential in the evolution of photonics technologies. The optical properties of 2D materials comprising the energy bandgap, third-order nonlinearity, nonlinear absorption and thermo-optics coefficient can be tailored for different optical applications. Over the past decade, the explorations of 2D materials in photonics applications have extended to all-optical modulators, all-optical switches, an all-optical wavelength converter, covering the visible, near-infrared and Terahertz wavelength range. Herein, we review different types of 2D materials, their fabrication processes and optical properties. In addition, we also summarize the recent advances of all-optical modulation based on 2D materials. Finally, we conclude on the perspectives on and challenges of the future development of the 2D material-based all-optical devices.

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Wu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang i in. "The fabrication and physical properties of two-dimensional van der Waals heterostructures". Acta Physica Sinica 71, nr 4 (2022): 048502. http://dx.doi.org/10.7498/aps.71.20212033.

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Two-dimensional van der Waals materials (2D materials for short) have developed into a novel material family that has attracted much attention, and thus the integration, performance and application of 2D van der Waals heterostructures has been one of the research hotspots in the field of condensed matter physics and materials science. The 2D van der Waals heterostructures provide a flexible and extensive platform for exploring diverse physical effects and novel physical phenomena, as well as for constructing novel spintronic devices. In this topical review article, starting with the transfer technology of 2D materials, we will introduce the construction, performance and application of 2D van der Waals heterostructures. Firstly, the preparation technology of 2D van der Waals heterostructures in detail will be presented according to the two classifications of wet transfer and dry transfer, including general equipment for transfer technology, the detailed steps of widely used transfer methods, a three-dimensional manipulating method for 2D materials, and hetero-interface cleaning methods. Then, we will introduce the performance and application of 2D van der Waals heterostructures, with a focus on 2D magnetic van der Waals heterostructures and their applications in the field of 2D van der Waals magnetic tunnel junctions and moiré superlattices. The development and optimization of 2D materials transfer technology will boost 2D van der Waals heterostructures to achieve breakthrough results in fundamental science research and practical application.

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Masurkar, Nirul, Sundeep Varma i Leela Mohana Reddy Arava. "Supported and Suspended 2D Material-Based FET Biosensors". Electrochem 1, nr 3 (23.07.2020): 260–77. http://dx.doi.org/10.3390/electrochem1030017.

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Field Effect Transistor (FET)-based electrochemical biosensor is gaining a lot of interest due to its malleability with modern fabrication technology and the ease at which it can be integrated with modern digital electronics. To increase the sensitivity and response time of the FET-based biosensor, many semiconducting materials have been categorized, including 2 dimensional (2D) nanomaterials. These 2D materials are easy to fabricate, increase sensitivity due to the atomic layer, and are flexible for a range of biomolecule detection. Due to the atomic layer of 2D materials each device requires a supporting substrate to fabricate a biosensor. However, uneven morphology of supporting substrate leads to unreliable output from every device due to scattering effect. This review summarizes advances in 2D material-based electrochemical biosensors both in supporting and suspended configurations by using different atomic monolayer, and presents the challenges involved in supporting substrate-based 2D biosensors. In addition, we also point out the advantages of nanomaterials over bulk materials in the biosensor domain.

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Maiti, Rishi, Rohit A. Hemnani, Rubab Amin, Zhizhen Ma, Mohammad H. Tahersima, Tom A. Empante, Hamed Dalir, Ritesh Agarwal, Ludwig Bartels i Volker J. Sorger. "A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm". Nanophotonics 8, nr 3 (21.02.2019): 435–41. http://dx.doi.org/10.1515/nanoph-2018-0197.

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AbstractAtomically thin 2D materials such as transition metal dichalcogenides (TMDs) provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. The control and understanding of the precise value of the optical index of these materials, however, is challenging, as the standard metrology techniques such as the millimeter-large ellipsometry is often not usable due the small lateral 2D material flake dimension. Here, we demonstrate an approach of passive tunable coupling by integrating few layers of MoTe2 onto a microring resonator connected to a waveguide bus. We find the TMD-to-ring circumference coverage length ratio required to precisely place the ring into a critical coupling condition to be about 10% as determined from the variation of spectral resonance visibility and loss as a function of TMD coverage. Using this TMD-ring heterostructure, we further demonstrate a semiempirical method to determine the index of a 2D material (nMoTe2 of 4.36+0.011i) near telecommunication-relevant wavelength. The placement, control, and optical property understanding of 2D materials with integrated photonics pave the way for further studies of active 2D material-based optoelectronics and circuits.

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Wu, Yuanpeng, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis i Zetian Mi. "Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications". Applied Physics Letters 122, nr 16 (17.04.2023): 160501. http://dx.doi.org/10.1063/5.0145931.

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Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored via heterostructure stacking, TMD technology is currently limited by the incompatibility with existing industrial processes. Conversely, III-nitrides have been widely used in light-emitting devices and power electronics but not leveraging excitonic quantum aspects. Recent demonstrations of 2D III-nitrides have introduced exciton binding energies rivaling TMDs, promising the possibility to achieve room-temperature quantum technologies also with III-nitrides. Here, we discuss recent advancements in the synthesis and characterizations of 2D III-nitrides with a focus on 2D free-standing structures and embedded ultrathin quantum wells. We overview the main obstacles in the material synthesis, vital solutions, and the exquisite optical properties of 2D III-nitrides that enable excitonic and quantum-light emitters.

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Murali, G., Jishu Rawal, Jeevan Kumar Reddy Modigunta, Young Ho Park, Jong-Hoon Lee, Seul-Yi Lee, Soo-Jin Park i Insik In. "A review on MXenes: new-generation 2D materials for supercapacitors". Sustainable Energy & Fuels 5, nr 22 (2021): 5672–93. http://dx.doi.org/10.1039/d1se00918d.

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MXene is one of the rapidly emerging 2D material in the present era of materials science, and it finds increasing applications in energy storage fields. MXene is one of the most suitable electrode materials for futuristic energy storage devices.

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Late, Dattatray J., i Claudia Wiemer. "Advances in low dimensional and 2D materials". AIP Advances 12, nr 11 (1.11.2022): 110401. http://dx.doi.org/10.1063/5.0129120.

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This special issue is focused on the advances in low-dimensional and 2D materials. 2D materials have gained much consideration recently due to their extraordinary properties. Since the isolation of single-layer graphene in Novoselov et al. [Science 306, 666–669 (2004)], the work on graphene analogs of 2D materials has progressed rapidly across the scientific and engineering fields. Over the last ten years, several 2D materials have been widely explored for technological applications. Moreover, the existence in nature of layered crystallographic structures where exotic properties emerge when the thickness is reduced to a few monolayers has enlarged the field of low-dimensional (i.e., quasi-2D) materials. The special topic aims to collect the recent advances in technologically relevant low-dimensional and 2D materials, such as graphene, layered semiconductors (e.g., MoS2, WS2, WSe2, PtSe2, MoTe2, Black-P, etc.), MXenes, and topological insulators, such as Bi2Te3, Sb2Te3, etc.). There is an urgent need for material innovations for the rapid development of the next technologies based on these materials. The scope of this special topic is to address recent trends in 2D materials and hybrid structures and their widespread applications in device technology and measurement.

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Shang, Peng, Huaiqing Zhang, Xiaopeng Liu, Zhuang Yang, Bingfeng Liu i Teng Liu. "Cutting-Force Modeling Study on Vibration-Assisted Micro-Milling of Bone Materials". Micromachines 14, nr 7 (14.07.2023): 1422. http://dx.doi.org/10.3390/mi14071422.

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This study aims to enhance surgical safety and facilitate patient recovery through the investigation of vibration-assisted micro-milling technology for bone-material removal. The primary objective is to reduce cutting force and improve surface quality. Initially, a predictive model is developed to estimate the cutting force during two-dimensional (2D) vibration-assisted micro-milling of bone material. This model takes into account the anisotropic structural characteristics of bone material and the kinematics of the milling tool. Subsequently, an experimental platform is established to validate the accuracy of the cutting-force model for bone material. Micro-milling experiments are conducted on bone materials, with variations in cutting direction, amplitude, and frequency, to assess their impact on cutting force. The experimental results demonstrate that selecting appropriate machining parameters can effectively minimize cutting force in 2D vibration-assisted micro-milling of bone materials. The insights gained from this study provide valuable guidance for determining cutting parameters in vibration-assisted micro-milling of bone materials.

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Chen, Cheng, Xiao Hui Wang, Zhi Qiang Dong, Gong Chen, Lu Xiao Han i Zhi Gang Zhu. "Anti-Counterfeiting Layer of 2D Colloidal Crystal Based Photonic Material". Materials Science Forum 972 (październik 2019): 185–90. http://dx.doi.org/10.4028/www.scientific.net/msf.972.185.

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A facile approach of robust polymer-based two-dimensional (2D) colloidal crystal (CC) layers was presented. This technology enables the convenient fabrication of an anti-counterfeiting coating with a polymeric 2D CC, allowing the fast preparation of functional polymer photonic materials. Briefly, a 2D CC was prepared by self-assembly of polystyrene (PS) submicrospheres, which was then transferred to substrates by adhesive polymeric solution and cured to form a photonic film. Such photonic films strongly and angle dependently diffract visible light, and the high transparency of the photonic layers ensured the readout from the substrate. The PC layers can also prevent the re-write or re-print on the substrate, indicating the potential applications in colorful and anti-counterfeiting coating materials.

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Kaul, Anupama B. "Graphene and The Advent of Other Layered-2D Materials for Nanoelectronics, Photonics and Related Applications". MRS Proceedings 1549 (2013): 11–16. http://dx.doi.org/10.1557/opl.2013.812.

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ABSTRACTCarbon-based nanostructures have been the center of intense research and development for more than two decades now. Of these materials, graphene, a two-dimensional (2D) layered material system, has had a significant impact on science and technology in recent years after it was experimentally isolated in single layers in 2004. The recent emergence of other classes of 2D layered systems beyond graphene has added yet more exciting and new dimensions for research and exploration given their diverse and rich spectrum of properties. For example, h-BN a layered material closest in structure to graphene, is an insulator, while NbSe, a transition metal dichalcogenide is metallic and monolayers of other transition metal di-chalcogenides such as MoS2 are direct band-gap semiconductors. The rich variety of properties that 2D layered material systems offer can potentially be engineered on-demand, and creates exciting prospects for their device and technological applications ranging from electronics, sensing, photonics, energy harvesting and flexible electronics in the near future.

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Rozprawy doktorskie na temat "2D material technology"

Hempel, Marek Ph D. Massachusetts Institute of Technology. "Technology and applications of 2D materials in micro- and macroscale electronics". Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/130201.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, May, 2020
Cataloged from student-submitted PDF of thesis.
Includes bibliographical references (pages 198-209).
Over the past 50 years, electronics has truly revolutionized our lives. Today, many everyday objects rely on electronic circuitry from gadgets such as wireless earbuds, smartphones and laptops to larger devices like household appliances and cars. However, the size range of electronic devices is still rather limited from the millimeter to meter scale. Being able to extend the reach of electronics from the size of a red blood cell to a skyscraper would enable new applications in many areas including energy production, entertainment, environmental sensing, and healthcare. 2D-materials, a new class of atomically thin materials with a variety of electric properties, are promising for such electronic systems with extreme dimension due to their flexibility and ease of integration. On the macroscopic side, electronics produced on thin films by roll-to-roll fabrication has great potential due to its high throughput and low production cost. Towards this end, this thesis explores the transfer of 2D-materials onto flexible EVA/PET substrates with hot roll lamination and electrochemical delamination using a custom designed roll-to-roll setup. The transfer process is characterized in detail and the lamination of multiple 2D material layers is demonstrated. As exemplary large-scale electronics application, a flexible solar cell with graphene transparent electrode is discussed. On the microscopic side, this thesis presents a 60x60 [mu]m² microsystem platform called synthetic cells or SynCells. This platform offers a variety of building blocks such as chemical sensors and transistors based on molybdenum disulfide, passive germanium timers, iron magnets for actuation, as well as gallium nitride LEDs and solar cells for communication and energy harvesting. Several system-level applications of SynCells are explored such as sensing in a microfluidic channel or spray-coating SynCells on arbitrary surfaces.
by Marek Hempel.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science

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ROTTA, DAVIDE. "Emerging devices and materials for nanoelectronics". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/76048.

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Questa tesi analizza la possibile implementazione di due tipologie di dispositivi elettronici con funzionalità innovative: dispositivi per la computazione quantistica e transistors a film sottile. Negli ultimi decenni l’industria dei semiconduttori ha portato alla realizzazione di circuiti integrati con milioni di transistors e performance sempre migliori a costi contenuti. Tuttavia, questo processo di miniaturizzazione è giunto a un punto tale che i dispositivi elettronici sono ora composti da pochissimi atomi e ridurne ulteriormente le dimensioni sta diventando sempre più difficile. L’International Technology Roadmap of Semiconductors (ITRS) suggerisce due vie alternative per migliorare le caratteristiche dei dispositivi a partire dalla Front-End-Of-Line. La prima si avvale di nuovi dispositivi sulla base di architetture innovative o dell’utilizzo di diverse variabili di stato (Emerging Research Devices), mentre la seconda punta all’utilizzo di nuovi materiali (Emerging Research Materials). Questa tesi esamina due possibili candidati in questa ottica: i dispositivi per la computazione quantistica su architettura Complementary Metal-Oxide-Semiconductor (CMOS) e i transistors a film sottile basati su un semiconduttore bidimensionale come il MoS2. Da un lato, l’integrazione della computazione quantistica su Si sfrutterebbe il background tecnologico dell’industria dei semiconduttori per implementare su larga scala un nuovo protocollo di computazione dotato di un potenziale enorme e ancora inesplorato. D’altra parte il di-solfuro di molibdeno (MoS2) è intrinsecamente scalabile, in quanto può essere esfoliato fino allo spessore di un singolo strato atomico. Per questo motivo potrebbe essere un semiconduttore ideale per dispositivi elettronici ultrascalati, così come per applicazioni nella sensoristica, nell’optoelettronica e nell’elettronica flessibile. Questo lavoro mostra l’attività svolta al Laboratorio MDM-IMM-CNR nell’ambito del corso di dottorato in Nanostrutture e Nanotecnologie all’Università di Milano Bicocca. Lo sviluppo e l’utilizzo di processi di fabbricazione della nanoelettronica, in particolare la litografia a fascio elettronico (EBL), sono stati parte integrante dell’attività sperimentale dedicata alla realizzazione di dispositivi CMOS-compatibili per la computazione quantistica e per l’integrazione di film sottili di MoS2 in strutture Metal-Oxide-Semiconductor Field-Effect-Transistor (MOS FET). I necessari passi di processo sono stati adeguatamente calibrati e ottimizzati in modo da ottenere dispositivi quantistici basati su Quantum Dots (QD) con dimensioni caratteristiche inferiori a 50 nm. Tali dispositivi sono stati sviluppati con tecnologia Silicon-On-Insulator (SOI), mantenendo così la compatibilità con lo standard della tecnologia CMOS. Dispositivi a singolo donore e con QD di silicio sono stati poi caratterizzati elettricamente a temperature criogeniche (fino a 300 mK). Impulsando i potenziali di gate in modo controllato, è stato possibile studiare fenomeni di tunneling di singoli elettroni su un donore in alti campi magnetici (8T). In modo analogo è stato dimostrato il controllo dello stato di carica di QDs di Si. In particolare, si è osservato l’insorgere di rumore telegrafico associato al movimento di un singolo elettrone tra due QDs. Infine è stato condotto uno studio di fattibilità per l’integrazione su larga scala di un’architettura di computazione quantistica (il cosiddetto hybrid spin qubit) basata su doppi QDs di Si. Sul secondo fronte sono stati realizzati dei MOS FETs a film sottile basati su frammenti di MoS2, ottenuti per esfoliazione meccanica e contattati elettricamente tramite litografia EBL. Tali transistors sono poi stati caratterizzati elettricamente, con particolare attenzione alle proprietà di trasporto di carica e alla spettroscopia delle trappole all’interfaccia con l’ossido.
This work of thesis explores two emerging research device concepts as possible platforms for novel integrated circuits with unconventional functionalities. Nowadays integrated circuits with advanced performances are available at affordable costs, thanks to the progressive miniaturization of electronic components in the last decades. However, bare geometrical scaling is no more a practical way to improve the device performances and alternative strategies must be considered to achieve an equivalent scaling of the functionalities. The introduction of conceptually new devices and paradigms of information processing (Emerging Research Devices) or new materials with unconventional properties (Emerging Research Materials) are viable approaches, as indicated by the International Technology Roadmap of Semiconductors (ITRS), to enhance the functionalities of integrated circuits at the Front-End-Of-Line. The two options investigated to this respect are silicon devices for quantum computation based on a classical Complementary Metal-Oxide-Semiconductor (CMOS) platform and standard Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) based on MoS2 thin film. In particular, the integration of Quantum Information Processing (QIP) in Si would take advantage of Si-based technology to introduce a completely new paradigm of information processing that has the potential to outperform classical computers in some computational tasks, like prime number factoring and the search in a big database. MoS2, conversely, can be exfoliated up to the single layer thickness. Such intrinsic and extreme scalability makes this material suitable for end-of-roadmap ultrascaled electronic devices as well as for other applications in the fields of sensors, optoelectronics and flexible electronics. This work reports on the experimental activity carried out at Laboratory MDM-IMM-CNR in the framework of the PhD school on Nanostructures and Nanotechnology at Università di Milano Bicocca. Electron Beam Lithography (EBL) and mainstream clean-room processing techniques have been intensively utilized to fabricate CMOS devices for QIP on the one hand and to integrate mechanically exfoliated MoS2 flakes in a conventional FET structure on the other hand. After a careful calibration and optimization of the process parameters, several different Quantum Dot (QD) configurations were designed and fully realized, achieving critical dimensions under 50 nm. Such device architectures were developed on a Silicon-On-Insulator (SOI) platform, in order to eventually access a straightforward integration into the CMOS mainstream technology. Si-QDs and donor-based devices have been then tested by electrical characterization techniques at cryogenic temperatures down to 300 mK. In detail, single electron tunneling events on a donor atom have been controlled by pulsed-gate techniques in high magnetic fields up to 8T, providing a preliminary characterization for the initialization procedure of donor qubits. The control of the charge states of Si-QDs have been also demonstrated by means of stability diagrams as well as the analysis of random telegraph noise arising from single electron tunneling between two QDs. Finally, a feasibility study for the large scale integration of quantum information processing was done based on a double QD hybrid qubit architecture. On the other side, MoS2 thin film transistors have been made by mechanical exfoliation of crystalline MoS2 and electrodes definition by EBL. Electrical characterization was performed on such devices, with a particular focus on the electrical transport in a FET device and on the spectroscopy of interface traps, that turns out to be a limiting factor for the logic operation.

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Jaouen, Kévin. "Backside absorbing layer microscopy : a new tool for the investigation of 2D materials". Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS296/document.

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La microscopie optique sur substrats antireflets est un outil de caractérisation simple et puissant qui a notamment permis l'isolation du graphène en 2004. Depuis, le domaine d'étude des matériaux bidimensionnels (2D) s'est rapidement développé, tant au niveau fondamental qu'appliqué. Ces matériaux ultraminces présentent des inhomogénéités (bords, joints de grains, multicouches, etc.) qui impactent fortement leurs propriétés physiques et chimiques. Ainsi leur caractérisation à l'échelle locale est primordiale. Cette thèse s'intéresse à une technique récente de microscopie optique à fort contraste, nommée BALM, basée sur l'utilisation originale de couches antireflets très minces (2-5 nm) et fortement absorbantes (métalliques). Elle a notamment pour but d'évaluer les mérites de cette technique pour l'étude des matériaux 2D et de leur réactivité chimique. Ainsi, les différents leviers permettant d'améliorer les conditions d'observation des matériaux 2D ont tout d'abord été étudiés et optimisés pour deux matériaux modèles : l'oxyde de graphène et les monocouches de MoS₂. L'étude de la dynamique de dépôt de couches moléculaires a notamment permis de montrer à la fois l'extrême sensibilité de BALM pour ce type de mesures et l'apport significatif des multicouches antireflets pour l'augmentation du contraste lors de l'observation des matériaux 2D. L'un des atouts principaux de BALM venant de sa combinaison à d'autres techniques, nous nous sommes particulièrement intéressés au couplage de mesures optiques et électrochimiques pour lesquelles le revêtement antireflet sert d'électrode de travail. Nous avons ainsi pu étudier optiquement la dynamique de réduction électrochimique de l'oxyde de graphène (GO), l'électro-greffage de couches minces organiques par réduction de sels de diazonium sur le GO et sa forme réduite (r-GO), ainsi que l'intercalation d'ions métalliques entre feuillets de GO. En combinant versatilité et fort-contraste, BALM est ainsi établi comme un outil prometteur pour l'étude des matériaux 2D et en particulier pour la caractérisation locale et in situ de leur réactivité chimique et électrochimique
Optical microscopy based on anti-reflective coatings is a simple yet powerful characterization tool which notably allowed the first observation of graphene in 2004. Since then, the field of two-dimensional (2D) materials has developed rapidly both at the fundamental and applied levels. These ultrathin materials present inhomogeneities (edges, grain boundaries, multilayers, etc.) which strongly impact their physical and chemical properties. Thus their local characterization is essential. This thesis focuses on a recent enhanced-contrast optical microscopy technique, named BALM, based on ultrathin (2-5 nm) and strongly light-absorbing (metallic) anti-reflective layers. The goal is notably to evaluate the benefits of this technique for the study of 2D materials and their chemical reactivity. The various levers to improve 2D materials observation were investigated and optimized for two model materials: graphene oxide and MoS₂ monolayers. The investigation of molecular layer deposition dynamic notably showed the extreme sensitivity of BALM for such measurements and the significant contribution of multilayers anti-reflective coatings to enhance contrast during the observation of 2D materials. One of the main assets of BALM comes from its combination to other techniques. We particularly considered the coupling between optical measurements and electrochemistry for which the anti-reflective layer serves as working electrode. We investigated optically the dynamic of electrochemical reduction of Graphene Oxide (GO), the electrografting of organic layers by diazonium salts reduction on GO and its reduced form (rGO), as well as the intercalation of metallic ions within GO sheets. By combining versatility and high-contrast, BALM is established as a promising tool for the study of 2D materials, especially for the local and in situ characterization of their chemical and electrochemical reactivity

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Biasco, Simone. "Photonic engineering of CW, ultrabroad gain, aperiodic quantum cascade lasers at terahertz frequencies integrations with 2D materials and study of the optical mode dynamics". Doctoral thesis, Scuola Normale Superiore, 2019. http://hdl.handle.net/11384/85908.

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The terahertz (THz) frequency range of the electromagnetic spectrum is usually defined in the range between 0.1 THz and 10 THz, corresponding to wavelengths in the interval from 3 mm to 30 µm, lying in-between the infrared and the microwave spectral regimes. In recent years, the progress of THz technology has fostered interdisciplinary research in spectroscopy and tomography to map macroscopic systems, (chemical detection and imaging, amongst others) or microscopic ones, such as nanoparticles and nanowires on either static or dynamic timescales. THz radiation is commonly generated with photoconductive emitters, semiconductor diodes, free-electron lasers, photomixing, and beating of a pump and idler signal from non-linear crystals. These approaches are often bulky, expensive or with limited optical powers. The breakthrough demonstration of quantum cascade lasers operating in the far-infrared, and based on quantum engineered heterostructures, paved the way to the development of much more compact, efficient and powerful semiconductor THz sources. Thanks to the atomic-layer resolution ensured in the heterostructure growth by molecular beam epitaxy (MBE), very accurate designs can be implemented via a proper sequence of quantum barriers and quantum wells. In this way, sharp discontinuities in the conduction and valence bands edges are created, in order to manipulate the electron energy levels and wavefunction localization, and to provide optical intersubband transitions at the desired frequencies. [...]

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Ullberg, Nathan. "Field-effect transistor based biosensing of glucose using carbon nanotubes and monolayer MoS2". Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-397719.

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As part of the EU SmartVista project to develop a multi-modal wearable sensor for health diagnostics, field-effect transistor (FET) based biosensors were explored, with glucose as the analyte, and carbon nanotubes (CNTs) or monolayer MoS2 as the semiconducting sensing layer. Numerous arrays of CNT-FETs and MoS2-FETs were fabricated by photolithographic methods and packaged as integrated circuits. Functionalization of the sensing layer using linkers and enzymes was performed, and the samples were characterized by atomic force microscopy, scanning electron microscopy, optical microscopy, and electrical measurements. ON/OFF ratios of 102 p-type and < 102 n-type were acheived, respectively, and the work helped survey the viability of realizing such sensors in a wearable device.
EU Horizon 2020 - SmartVista (825114)

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Bandyopadhyay, Avra Sankar. "Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic Devices". Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752376/.

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In this work, we explored one material from the broad family of 2D semiconductors, namely WSe2 to serve as an enabler for advanced, low-power, high-performance nanoelectronics and optoelectronic devices. A 2D WSe2 based field-effect-transistor (FET) was designed and fabricated using electron-beam lithography, that revealed an ultra-high mobility of ~ 625 cm2/V-s, with tunable charge transport behavior in the WSe2 channel, making it a promising candidate for high speed Si-based complimentary-metal-oxide-semiconductor (CMOS) technology. Furthermore, optoelectronic properties in 2D WSe2 based photodetectors and 2D WSe2/2D MoS2 based p-n junction diodes were also analyzed, where the photoresponsivity R and external quantum efficiency were exceptional. The monolayer WSe2 based photodetector, fabricated with Al metal contacts, showed a high R ~502 AW-1 under white light illumination. The EQE was also found to vary from 2.74×101 % - 4.02×103 % within the 400 nm -1100 nm spectral range of the tunable laser source. The interfacial metal-2D WSe2 junction characteristics, which promotes the use of such devices for end-use optoelectronics and quantum scale systems, were also studied and the interfacial stated density Dit in Al/2D WSe2 junction was computed to be the lowest reported to date ~ 3.45×1012 cm-2 eV-1. We also examined the large exciton binding energy present in WSe2 through temperature-dependent Raman and photoluminescence spectroscopy, where localized exciton states perpetuated at 78 K that are gaining increasing attention for single photon emitters for quantum information processing. The exciton and phonon dynamics in 2D WSe2 were further analyzed to unveil other multi-body states besides localized excitons, such as trions whose population densities also evolved with temperature. The phonon lifetime, which is another interesting aspect of phonon dynamics, is calculated in 2D layered WSe2 using Raman spectroscopy for the first time and the influence of external stimuli such as temperature and laser power on the phonon behavior was also studied. Furthermore, we investigated the thermal properties in 2D WSe2 in a suspended architecture platform, and the thermal conductivity in suspended WSe2 was found to be ~ 1940 W/mK which was enhanced by ~ 4X when compared with substrate supported regions. We also studied the use of halide-assisted low-pressure chemical vapor deposition (CVD) with NaCl to help to reduce the growth temperature to ∼750 °C, which is lower than the typical temperatures needed with conventional CVD for realizing 1L WSe2. The synthesis of monolayer WSe2 with high crystalline and optical quality using a halide assisted CVD method was successfully demonstrated where the role of substrate was deemed to play an important role to control the optical quality of the as-grown 2D WSe2. For example, the crystalline, optical and optoelectronics quality in CVD-grown monolayer WSe2 found to improve when sapphire was used as the substrate. Our work provides fundamental insights into the electronic, optoelectronic and quantum properties of WSe2 to pave the way for high-performance electronic, optoelectronic, and quantum-optoelectronic devices using scalable synthesis routes.

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Prasad, Parmeshwar. "Parametric Manipulation in 2D Material based NEMS Resonators". Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4669.

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In this this thesis, I have studied dynamics of the two-dimensional (2D) material based NEMS resonators with resonant frequency ranging typically from 10 MHz to 100 MHz. The experiment involved fabrication of the suspended nano-scale devices both with global and local gate architectures. The experiments focused on parametric manipulation of MoS2 drum resonator using electrical actuation and detection schemes. This study demonstrated parametric ampli cation in the NEMS at non-cryogenic temperature and discussed effects of During non-linearity on the parametric gain. Further, multimodal coupling among the mechanical modes in the drum resonator was also demonstrated

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Duarte, Henrique Manuel Sousa. "The material non linear analysis of 2D strutures using a radial point interpolation method". Dissertação, 2014. https://repositorio-aberto.up.pt/handle/10216/84114.

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Duarte, Henrique Manuel Sousa. "The material non linear analysis of 2D strutures using a radial point interpolation method". Master's thesis, 2014. https://repositorio-aberto.up.pt/handle/10216/84114.

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Kuruva, Hemanjaneyulu. "Addressing the Performance and Reliability Bottlenecks in 2D Transition Metal Dichalcogenide (TMD) Based Transistor Technology". Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5716.

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In this thesis, we presented different contributions towards the development of 2D material technology. Firstly the realization of desired dimensions over singlecrystal high-quality MoS2 material through dry etching techniques. SF6 plasma induces large residue over the material, inhibiting the application despite its advantage over SiO2 etch selectivity. On the other hand, CHF3 plasma is shown to give a well-controlled etching process with its relatively lower etch rate than SF6 plasma. However, under over-etch conditions, plasma is observed to introduce two significant challenges. The first is the doping induced by high-energy fluorine radicals diffused through resist and the TMD material. The second one is the crystal damage caused by plasma from the side walls elimination of these two challenges required highly controlled etching. Optimized and controlled etching using CHF3 plasma resulted in transistors’ fabrication without compromising the performance compared to reference transistors. The same controlled etching process is observed to apply to other TMDs as well. Transistors implemented with such an approach have shown no degradation in performance metrics than standard devices, thus generalizing the process applicability to all TMDs.

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Książki na temat "2D material technology"

Rogalski, Antoni. 2d Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2022.

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Rogalski, Antoni. 2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.

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2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.

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Rogalski, Antoni. 2d Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.

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2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.

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Rogalski, Antoni. 2D Materials for Infrared and Terahertz Detectors. Taylor & Francis Group, 2020.

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Banks, Craig E., i Dale A. C. Brownson. 2d Materials. Taylor & Francis Group, 2021.

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Houssa, Michel, Alessandro Molle i A. Dimoulas. 2d Materials for Nanoelectronics. Taylor & Francis Group, 2021.

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Dimoulas, Athanasios, Michel Houssa i Alessandro Molle. 2D Materials for Nanoelectronics. Taylor & Francis Group, 2016.

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Kumar, Santosh, Sanjeev Kumar Raghuwanshi i Yadvendra Singh. 2D Materials for Surface Plasmon Resonance-Based Sensors. Taylor & Francis Group, 2021.

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Części książek na temat "2D material technology"

Rawat, Ankita, i P. K. Kulriya. "2D/3D Material for Gas Sensor". W Smart Nanostructure Materials and Sensor Technology, 161–78. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2685-3_8.

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Tiwari, Ram Chandra, i Netra Prakash Bhandary. "Application of Spectral Element Method (SEM) in Slope Instability Analysis". W Progress in Landslide Research and Technology, Volume 1 Issue 1, 2022, 163–74. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-16898-7_11.

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AbstractSpectral element framework for slope instability analysis includes Spectral Element Method (SEM) formulation, system requirements for serial and parallel computations, model preparation with hexahedral meshing in Cubit or Trelis, meshing and mapping technique (h- and p-refinement techniques) according to SEM, applying boundary conditions for 2D and 3D, defining inputs for material model, ground water table, seismic loading as well as processing and visualizing the results in Tecplot and ParaView. Within this framework, the safety factor in slope stability is computed and visualized with greater spectral accuracy and stability.

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Ikram, Muhammad, Ali Raza i Salamat Ali. "Advances in Ultrathin 2D Materials". W Nanostructure Science and Technology, 11–29. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-96021-6_2.

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Yue, Xianfang. "Effect of translation energy on the reaction N(2D) + D2(v = 0, j = 0)". W Advances in Materials Science, Energy Technology and Environmental Engineering, 375–78. P.O. Box 11320, 2301 EH Leiden, The Netherlands, e-mail: Pub.NL@taylorandfrancis.com , www.crcpress.com – www.taylorandfrancis.com: CRC Press/Balkema, 2016. http://dx.doi.org/10.1201/9781315227047-74.

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Alharbi, Abdullah, Naif Alshamrani, Hadba Hussain, Mohammed Alhamdan i Salman Alfihed. "Two-Dimensional Materials for Terahertz Emission". W Trends in Terahertz Technology [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.110878.

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The demand for ultrahigh-speed, lightweight, low-cost, and defect-tolerant electronic devices drives the industry to switch to terahertz (THz) technologies. The use of two-dimensional (2D) materials has massively increased in THz applications due to their appealing electronic and optoelectronic properties, including tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. Several 2D-material-based emitters, modulators, and detectors have been fabricated and examined. In this context, considerable research has been going on for 2D-material-based THz emitting sources, including materials and device structure to understand the electronics and optoelectronics mechanisms occurring in the THz region. This chapter focuses on the 2D-material-based emitters with insights into the background, the physical principle of photoconductive THz emitters, the 2D materials’ properties, and the research trends in the fabrication and characterization of the THz sources based upon 2D materials.

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Ikram, Muhammad, Ali Raza, Khurram Shahzad, Ali Haider, Junaid Haider, Abdullah Khan Durrani, Asim Hassan Rizvi, Asghari Maqsood i Mujtaba Ikram. "Advanced Carbon Materials: Base of 21st Century Scientific Innovations in Chemical, Polymer, Sensing and Energy Engineering". W Sol Gel and other Fabrication Methods of Advanced Carbon Materials [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95869.

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Advance carbon material that includes graphene, fullerenes, hierarchical carbon, and CNTs are referred to as strength of revolution and advancement in the era of material science and technology. In general, 20th century corresponds to plastic meanwhile 21st century will be named as “Century of Graphene” owing to its exceptional physical properties. Graphene is now well-known and prominent 2D carbon allotrope that is considered as multipurpose material in comparison with any material discovered on earth. One of the interesting properties of graphene is strongest and lightest material that enables it to conduct electricity and heat as compared to any other material. Such features permit it to utilize in numerous applications including biosensors, electronic industry, environmental remediation, drug delivery, energy storage, and production as well. Owing to these capabilities, it can be stated that graphene can be utilized to improve effectiveness and performance of existing substances and materials. In the future, conjugation of graphene with other 2D material will be devolved to produce further remarkable compounds that make it appropriate for an extensive variety of applications. This chapter grants the utilization and applications of advanced carbons materials in chemical, polymer, sensing and energy enegineering.

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Raja, Vithaldas, i Ramesh Mohan Thamankar. "Resistive Switching and Hysteresis Phenomena at Nanoscale". W Electric Field in Advancing Science and Technology [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.101500.

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Resistive switching at the nanoscale is at the heart of the memristor devices technology. These switching devices have emerged as alternative candidates for the existing memory and data storage technologies. Memristors are also considered to be the fourth pillar of classical electronics; extensive research has been carried out for over three decades to understand the physical processes in these devices. Due to their robust characteristics, resistive switching memory devices have been proposed for neuromorphic computation, in-memory computation, and on-chip data storage. In this chapter, the effects of various external stimuli on the characteristics of resistive switching devices are comprehensively reviewed. The emphasis will be given on 2-dimensional (2D) materials, which are exciting systems owing to superior electrical characteristics combined with their high stability at room temperature. These atomically thin 2D materials possess unique electrical, optical and mechanical properties in a broad spectrum, and open the opportunity for developing novel and more efficient electronic devices. Additionally, resistive switching due to light has also grabbed the attention of optoelectronic engineers and scientists for the advancement of optical switches and photo tuned memristors. The variety of material systems used in the fabrication of memristors is comprehensively discussed.

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Saini, Ayushi, Anil Ohlan, S. K. Dhawan i Kuldeep Singh. "Nanostructured Two-Dimensional (2D) Materials as Potential Candidates for EMI Shielding". W Smart Materials Design for Electromagnetic Interference Shielding Applications, 465–526. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815036428122010014.

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For an effective EMI shielding, materials should have high electrical conductivity as EMI attenuation is a sum of relfection, absorption, and multiple relfections which requires the existence of mobile charge carriers (electrons or holes), electric and/or magnetic dipoles, usually provided by materials having high dielectric constants (ε) or magnetic permeability (μ) and the large surface area or interface area. Until now, a metal shroud was the material of choice as an EMI shield. However, metal fillers add additional weight and are susceptible to corrosion, making them less desirable. Therefore, we have focused on new emerging two-dimensional 2D nanomaterials that are light in weight and have a low cost. Here, the focus is to address the challenges in their synthesis especially transition metal carbides (MXenes), MoS2, functionalized graphene/ferromagnetic conducting polymer composites, and their fabrication for EMI reductions. These articles also evaluate and explain the recent progress explicitly and underline the complex interplay of its intrinsic properties of 2D nanostructured materials (MXene, MoS2, Graphene/ferromagnetic polymer composite) as a potential candidate for EMI shielding and evaluate their electromagnetic compatibility. The chapter will cover the facets related to a newly emerging area of EMI shields in the automotive industry, especially lithium-ion battery-operated electric vehicles and self-driving cars, high-speed wireless communication devices, and next-generation mobile phones with 4G and 5G technology.

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R., Muthuminal. "An Overview on 3D Site Modelling in Civil Engineering". W Recent Advances in 3D Imaging, Modeling, and Reconstruction, 108–27. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-5225-5294-9.ch005.

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In past decades, for developing a site, engineers used the process of creating a scale model in order to determine their behaviour and to sketch the details collected manually using the drafting process, which behaves as a referring material during the construction of structures. Due to the boom in technology and limitations in drafting, the drawings have been digitized using computer-aided design (CAD) software as a two-dimensional structure (2D). Currently, these drawings are detailed as a three-dimensional structure (3D) that is briefly noted as 3D modelling. Three-dimensional site modelling is an active area that is involved in research and development of models in several fields that has been originated from the scale modelling. In this chapter, the topic 3D site modelling in civil engineering is discussed. First of all, the basic concepts of scale modelling, architectural modelling, and structural modelling are discussed. Then the concept of virtual-based 3D site modelling, its importance, benefits, and steps involved in site modelling are briefed.

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Elemans, P. H. M. "Polymer Twin Screw Extrusion: 2D Modeling". W Encyclopedia of Materials: Science and Technology, 7540–43. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/01348-6.

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Streszczenia konferencji na temat "2D material technology"

Maiti, Rishi, Xie Ti, Hao Wang, Rubab Amin, Chandraman Patil i Volker J. Sorger. "2D Material based Electro-Absorption Modulator in Si Photonics". W CLEO: Applications and Technology. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_at.2020.af2i.3.

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Koester, Steven J. "Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges". W 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103009.

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Koppens, Frank. "Quantum plasmonics, polaritons and strong light-matter interactions with 2d material heterostructures". W CLEO: Applications and Technology. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/cleo_at.2017.jw1g.1.

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Brems, Steven, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai i in. "Overview of scalable transfer approaches to enable epitaxial 2D material integration". W 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT). IEEE, 2023. http://dx.doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381.

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Schubert, Martin, Zahra Fekri, Thomas Ackstaller, Yagnika Vekariya, Krzysztof Nieweglowski, Artur Erbe i Karlheinz Bock. "Characterization of gas permeability of polymer membranes for encapsulation of 2D-material sensors". W 2021 44th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2021. http://dx.doi.org/10.1109/isse51996.2021.9467627.

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Liang, Gengchiau. "Device Performance of 2D Layered Material Transistors and Their Challenges: A Theoretical Study". W 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421444.

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Islam, Md Sherajul, Md Rayid Hasan Mojumder, Asif Hassan, Minhaz Uddin Sohag i Jeongwon Park. "High-Efficiency Multi Quantum Well Blue LED Using 2D-SiC as an Active Material". W 2021 5th International Conference on Electrical Engineering and Information Communication Technology (ICEEICT). IEEE, 2021. http://dx.doi.org/10.1109/iceeict53905.2021.9667843.

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Brandner, M., T. Thurner, G. Kukutschki i N. Enzinger. "Optical 2D Displacement and Strain Sensor for Creep Testing of Material Samples in Transparent Fluids". W 2008 IEEE Instrumentation and Measurement Technology Conference - I2MTC 2008. IEEE, 2008. http://dx.doi.org/10.1109/imtc.2008.4547265.

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Saini, Shalu, Anurag Dwivedi, Anil Lodhi, Arpit Khandelwal i Shree Prakash Tiwari. "Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer". W 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10103025.

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Chhipa, Mayur Kumar, i Massoudi Radhouene. "Scatterer rod radius analysis in 2D photonic crystal structure based channel drop filter using InP material". W 2016 IEEE Conference on Recent Advances in Lightwave Technology (CRALT). IEEE, 2016. http://dx.doi.org/10.1109/cralt.2016.8066035.

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