Artykuły w czasopismach: „2d-3d tcad”

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IÑIGUEZ, BENJAMIN, ROMAIN RITZENTHALER i FRANÇOIS LIME. "COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs". International Journal of High Speed Electronics and Systems 22, nr 01 (listopad 2013): 1350004. http://dx.doi.org/10.1142/s0129156413500043.

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This chapter presents some insights into the modeling of different Multi-Gate SOI MOSFET structures, and in particular Double-Gate MOSFETs (DG MOSFETs) and Tri-Gate MOSFETs (TGFETs). For long-channel case an electrostatic model can be developed from the solution of the 1D Poisson's equation (in the case of DG MOSFETs) and the 2D Poisson's equation in the section perpendicular to the channel (in the case of TGFETs). Allowing it to be incorporated in quasi-2D compact models. For short-channel devices a model can be derived from a 2D (in the case of DG MOSFETs) or a 3D (in the case of TGFETs) electrostatic analysis. The models were successfully compared with 2D and 3D TCAD simulations and, in some cases, experimental measurements. Short-channel effects, such as subthrehold slope degradation, threshold voltage roll-off and DIBL were accurately reproduced.

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Rahimo, Munaf T., Iulian Nistor i David Green. "Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology". Materials Science Forum 1062 (31.05.2022): 539–43. http://dx.doi.org/10.4028/p-u88313.

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This paper presents a Singular Point Source MOS (S-MOS) cell concept suitable for SiC MOSFETs targeting low conduction losses, low switching losses and high robustness. The S-MOS concept differs from standard Planar or Trench MOS cells in the manner by which the total channel width per device area is determined. For the proof of concept and device electrical performance evaluation, the paper will provide 2D and 3D TCAD simulations results for 1200V SiC MOSFETs including the S-MOS and reference planar and trench structures.

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Aguirre, P., M. Rau i A. Schenk. "2D and 3D TCAD simulation of III-V channel FETs at the end of scaling". Solid-State Electronics 159 (wrzesień 2019): 123–28. http://dx.doi.org/10.1016/j.sse.2019.03.043.

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Dash, T. P., S. Dey, S. Das, J. Jena, E. Mahapatra i C. K. Maiti. "Source/Drain Stressor Design for Advanced Devices at 7 nm Technology Node". Nanoscience & Nanotechnology-Asia 10, nr 4 (26.08.2020): 447–56. http://dx.doi.org/10.2174/2210681209666190809101307.

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Background:: In nano and microelectronics, device performance enhancement is limited by downscaling. Introduction of intentional mechanical stress is a potential mobility booster to overcome these limitations. This paper explores the key design challenges of stress-engineered FinFETs based on the epitaxial SiGe S/D at 7 nm Technology node. Objective:: To study the mechanical stress evolution in a tri-gate FinFET at 7 nm technology node using technology CAD (TCAD) simulations. Using stress maps, we analyze the mechanical stress impact on the transfer characteristics of the devices through device simulation. Methods: 3D sub-band Boltzmann transport analysis for tri-gate PMOS FinFETs was used, with 2D Schrödinger solution in the fin cross-section and 1D Boltzmann transport along the channel. Results:: Using stress maps, the mechanical stress impact on the transfer characteristics of the device through device simulation has been analyzed. Conclusion:: Suitability of predictive TCAD simulations to explore the potential of innovative strain-engineered FinFET structures for future generation CMOS technology is demonstrated.

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Mo, Fei, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto i Masaharu Kobayashi. "A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures". Japanese Journal of Applied Physics 61, SC (9.02.2022): SC1013. http://dx.doi.org/10.35848/1347-4065/ac3d0e.

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Abstract We have investigated the memory characteristics of InGaZnO (IGZO)-channel ferroelectric FETs (FeFETs) with 2D planar and 3D structures by TCAD simulation to improve the memory window (MW) with a floating-body channel for high-density memory applications. From the study on 2D planar FeFETs with a single gate and a double gate, the MW depends on channel length (L) and is enhanced with shorter L due to stronger electrostatic coupling from the source and drain to the center region of the IGZO layer. From the study on 3D structure FeFETs with macaroni (MAC) and nanowire (NW) structures, a large MW can be obtained especially in NW FeFETs due to the electric field concentration by Gauss’s law in the 3D electrostatics. Furthermore, we have systematically studied and discussed the device design of MAC and NW structure FeFETs in terms of the diameter and thickness for high-density memory applications. As the IGZO thickness and the outer diameter of the IGZO layer decrease, the MW increases due to the voltage divider and the electric field concentration. The device parameters that can maximize the MW can be determined under the constraints of the layout and material based on this study.

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Rahimo, Munaf, Iulian Nistor i David Green. "Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept". Key Engineering Materials 945 (19.05.2023): 83–89. http://dx.doi.org/10.4028/p-g4w5h5.

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This paper investigates the short channel effects (SCE) of the recently proposed Singular Point Source MOS (S-MOS) SiC MOSFET. The study was carried out using 2D and 3D TCAD simulations for a planar, trench and S-MOS 1200V SiC MOSFETs for the IV output characteristics up to 1200V and under short circuit transient conditions. The S-MOS device shows no SCE up to the rated voltage when compared to reference planar and trench devices which exhibit strong SCE. This is due to the appropriate P++ protection of the N++ source and the electric field shielding due to the narrow mesa dimensions between orthogonal trenches where the channel is located.

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Italia, Markus, Ioannis Deretzis, Alfio Nastasi, Silvia Scalese, Antonino La Magna, Massimo Pirnaci, Daniele Pagano, Dario Tenaglia i Patrizia Vasquez. "Multiscale Simulations of Plasma Etching in Silicon Carbide Structures". Materials Science Forum 1062 (31.05.2022): 214–18. http://dx.doi.org/10.4028/p-n9v122.

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Manufacturing of Silicon Carbide (SiC) based devices will soon require the accuracy and control typical of the advanced Si based nanoelectronics. As a consequence, the processes development will surely benefit of technology computer aided design (TCAD) tools dedicated to the current and future SiC process technologies. Plasma etching is one of the most critical and difficult process for optimization procedures in the micro/nanofabrication area, since the resultant 2D (e.g. in trenches) or 3D (e.g in holes) profiling is the consequence of the complex interactions between plasma and materials in the device structures. In this contribution we present a simulation tool dedicated to the etching simulation of SiC structures based on the sequential combination of a plasma scale global model and feature scale Kinetic Monte Carlo simulations. As an example of the approach validation procedure the simulations are compared with the characterization analysis of particular real process results.

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Tripathi, Suman Lata. "Pocket Vertical Junction-Less U-Shape Tunnel FET and Its Challenges in Nano-Scale Regime". Advanced Science, Engineering and Medicine 11, nr 12 (1.12.2019): 1225–30. http://dx.doi.org/10.1166/asem.2019.2466.

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Low voltage application of Tunnel FET with steep subthreshold slope, has potential to replace its MOSFET counterpart for future scaling due to thermal limits imposed on nano-level transistors. Longer channel region increases the tunneling area results in increasing tunneling current and decreasing miller capacitance to improve device switching performance for digital application. A new pocket tunnel junction-less UTFET (JLUTFET) exploits increased channel length with U shape and high ON current capability of junction-less transistor provide better device performance in subthreshold region showing improvement in ION/IOFF(∼109) as compared to other similar conventional TFET and vertical TFET structures. The proposed nJLUTFET also shows lower drain induced barrier lowering (<20 mV/V) and near to ideal subthreshold slope (∼66 mV/decade). The temperature analysis plays a vital role to decide a stable ON and OFF-state performance of transistors. So, the proposed pocket JLUTFET is investigated for temperature variations (ranging 250–400 K) to characterize the performance such as transfer characteristics, Output characteristics and ION/IOFF ratio. The proposed n-channel JLUTFET has been designed on visual TCAD 2D/3D device simulator.

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Assiouras, P., P. Asenov, A. Kyriakis i D. Loukas. "Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations". Journal of Instrumentation 15, nr 11 (24.11.2020): P11034. http://dx.doi.org/10.1088/1748-0221/15/11/p11034.

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Sulaiman, Raed, Pradip De, Jennifer C. Aske, Xiaoqian Lin, Adam Dale, Kris Gaster, Luis Rojas Espaillat, David Starks i Nandini Dey. "A CAF-Based Two-Cell Hybrid Co-Culture Model to Test Drug Resistance in Endometrial Cancers". Biomedicines 11, nr 5 (29.04.2023): 1326. http://dx.doi.org/10.3390/biomedicines11051326.

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The management of advanced or recurrent endometrial cancers presents a challenge due to the development of resistance to treatments. The knowledge regarding the role of the tumor microenvironment (TME) in determining the disease’s progression and treatment outcome has evolved in recent years. As a TME component, cancer-associated fibroblasts (CAFs) are essential in developing drug-induced resistance in various solid tumors, including endometrial cancers. Hence, an unmet need exists to test the role of endometrial CAF in overcoming the roadblock of resistance in endometrial cancers. We present a novel tumor–TME two-cell ex vivo model to test CAF’s role in resisting the anti-tumor drug, paclitaxel. Endometrial CAFs, both NCAFs (tumor-adjacent normal-tissue-derived CAFs) and TCAFs (tumor-tissue-derived CAFs) were validated by their expression markers. Both TCAFs and NCAFs expressed positive markers of CAF, including SMA, FAP, and S100A4, in varying degrees depending on the patients, while they consistently lacked the negative marker of CAF, EpCAM, as tested via flow cytometry and ICC. CAFs expressed TE-7 and immune marker, PD-L1, via ICC. CAFs better resisted the growth inhibitory effect of paclitaxel on endometrial tumor cells in 2D and 3D formats compared to the resistance of the tumoricidal effect of paclitaxel in the absence of CAFs. TCAF resisted the growth inhibitory effect of paclitaxel on endometrial AN3CA and RL-95-2 cells in an HyCC 3D format. Since NCAF similarly resisted the growth inhibitor action of paclitaxel, we tested NCAF and TCAF from the same patient to demonstrate the protective action of NCAF and TCAF in resisting the tumoricidal effect of paclitaxel in AN3CA in both 2D and 3D matrigel formats. Using this hybrid co-culture CAF and tumor cells, we established a patient-specific, laboratory-friendly, cost-effective, and time-sensitive model system to test drug resistance. The model will help test the role of CAFs in developing drug resistance and contribute to understanding tumor cell-CAF dialogue in gynecological cancers and beyond.

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Schwindt, D., i C. Kneisel. "Optimisation of quasi-3D electrical resistivity imaging – application and inversion for investigating heterogeneous mountain permafrost". Cryosphere Discussions 5, nr 6 (5.12.2011): 3383–421. http://dx.doi.org/10.5194/tcd-5-3383-2011.

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Abstract. This study aimed to optimise the application, efficiency and interpretability of quasi-3D resistivity imaging for investigating the heterogeneous permafrost distribution at mountain sites by a systematic forward modelling approach. A three dimensional geocryologic model, representative for most mountain permafrost settings, was developed. Based on this geocryologic model quasi-3D models were generated by collating synthetic orthogonal 2D arrays, demonstrating the effects of array types and electrode spacing on resolution and interpretability of the inversion results. The effects of minimising the number of 2D arrays per quasi-3D grid were tested by enlarging the spacing between adjacent lines and by reducing the number of perpendicular tie lines with regard to model resolution and loss of information value. Synthetic and measured quasi-3D models were investigated with regard to the lateral and vertical resolution, reliability of inverted resistivity values, the possibility of a quantitative interpretation of resistivities and the response of the inversion process on the validity of quasi-3D models. Results show that setups using orthogonal 2D arrays with electrode spacings of 2 m and 3 m are capable of delineating lateral heterogeneity with high accuracy and also deliver reliable data on active layer thickness. Detection of permafrost thickness, especially if the permafrost base is close to the penetration depth of the setups, and the reliability of absolute resistivity values emerged to be a weakness of the method. Quasi-3D imaging has proven to be a promising tool for investigating permafrost in mountain environments especially for delineating the often small-scale permafrost heterogeneity, and therefore provides an enhanced possibility for aligning permafrost distribution with site specific surface properties and morphological settings.

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Dagorn, Y., A. Leble, J. J. Rousseau i J. C. Fayet. "Precursor-order clusters, critical slowing down and 2D to 3D crossover above Tcand NH4AlF4:Fe3+through EPR". Journal of Physics C: Solid State Physics 18, nr 2 (20.01.1985): 383–95. http://dx.doi.org/10.1088/0022-3719/18/2/016.

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Chang, Kyungwook, Saurabh Sinha, Brian Cline, Greg Yeric i Sung Kyu Lim. "Design-aware Partitioning-based 3D IC Design Flow with 2D Commercial Tools". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2021, 1. http://dx.doi.org/10.1109/tcad.2021.3065005.

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Dang, Cong Thinh. "APPLICATIONS OF TCAD SIMULATION SOFTWARE TO THE STUDY OF FLOATING-GATE DEVICE". Journal of Science and Technique 8, nr 2 (8.01.2021). http://dx.doi.org/10.56651/lqdtu.jst.v8.n02.61.ict.

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The floating-gate device has become an established component of all electronic systems, especially Non-volatile memories in recent years. This paper produces a study for this device including the structure and operation (read, program/write and erase). A complete flow which uses ATHENA, ATLAS and DEVEDIT3D tools for 2D and 3D structure simulations including I-V characteristics, Channel Hot Electron Injection, and Fowler-Nordheim Tunnel simulations are performed in TCAD environment.

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Plummer, J. D. "Defects and Diffusion issues for the Manufacturing of Semiconductors in the 21st Century". MRS Proceedings 469 (1997). http://dx.doi.org/10.1557/proc-469-3.

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ABSTRACTWithin the past decade, process simulation has become an essential part of new technology development in the silicon IC industry. The use of TCAD (technology computer aided design) tools has been driven by the enormous cost of purely experimental approaches to technology development. Yet the power of these tools and their predictive capability are still greatly limited by the models they use. TCAD models for doping processes are universally based today on point defects. These models have evolved considerably in the past decade to incorporate additional understanding. The state-of-the-art today includes concentration dependent diffusion through Fermi level effects on defect concentrations, full coupling between defects and dopants which allows prediction of non-local diffusion effects, basic models for the effects of ion implantation damage (the +1 model), surface and interface effects (through effective recombination velocities and segregation), and full 2D and 3D simulations.As devices continue to shrink, better models will certainly be required. Challenges for the future include more detailed information about damage resulting from ion implantation, better understanding of point defect properties (equilibrium populations, diffusivities, transient response to temperatures changes), better models for point defect behavior at interfaces, and finally, development of accurate methods to actually measure 2D and 3D dopant profiles. This paper will attempt to describe where we are and where we need to be in the future.

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Geißendörfer, Stefan, Karsten von Maydell i Carsten Agert. "Numerical 3D-Simulation of Micromorph Silicon Thin Film Solar Cells". MRS Proceedings 1321 (2011). http://dx.doi.org/10.1557/opl.2011.934.

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ABSTRACTIn this contribution 1, 2 and 3-dimensional simulations of micromorph silicon solar cells are presented. In order to simulate solar cells with rough interfaces, the surface topographies were measured via atomic force microscopy (AFM) and transferred into the commercial software Sentaurus TCAD (Synopsys). The model of the structure includes layer thicknesses and optoelectronic parameters like complex refractive index and defect structure. Results of the space resolved optical generation rates by using of the optical solver Raytracer are presented. The space resolved optical generation rate inside the semiconductor layers depends on the structure of the transparent conductive oxides (TCO) interface. In this contribution the influence of different optical generation rates on the electrical characteristics of the solar cell device are investigated. Furthermore, the optical and electrical results of the 1D, 2D and 3D structures, which have equal layer thicknesses and optoelectronic parameters, are compared.

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Swe, Khine Thandar Nyunt, Chanvit Pamonchom, Amporn Poyai i Toempong Phetchakul. "Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors". Journal of Mobile Multimedia, 21.03.2022. http://dx.doi.org/10.13052/jmm1550-4646.18416.

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This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the highest value 0.00201 T−1-1 at channel length 50 nm. Fin height and fin width of 50 nm give the highest sensitivity of 0.00468 T−1-1 and 0.00415 T−1-1 respectively. Current density distributions of the different variations of each parameter Lgg, Fhh and Fww are observed by applying vertical magnetic field on the device. The 3D-MAGFinFET has been compared to that of the 2D non-split drain MAGFET structure and bulk fin resistor that use n-type semiconductor instead of induction channel. MAGFinFET shows quite higher sensitivity compared to bulk fin resistor. MAGFinFET mechanism models and simple characteristic equations are proposed in this work. Sentaurus TCAD is used for the device structure and simulation for the characteristics of MAGFinFET. This FinFET based device can be fabricated with modern integrated circuit technology.

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Michalak, Tyler J., Chris Borst, Dan Franca, Josh Herman i Martin Rodgers. "Simulation of Millisecond Laser Anneal on SOI: A Study of Dopant Activation and Mobility and its Application to Scaled FinFET Thermal Processing". MRS Proceedings 1562 (2013). http://dx.doi.org/10.1557/opl.2013.825.

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ABSTRACTThis work investigates scanning laser annealing used for ultra-shallow junction (USJ) activation. We investigate the laser system via simulation to determine the peak temperature achieved in the active area during processing. We employed the Sentaurus TCAD software by Synopsys to perform a 2D simulation of a laser scans across the active area of the device, solving the heat equation in both time and space. An absorber layer is deposited on the wafer surface to enhance the absorption of incident energy and reduce SOI reflectivity. An effective absorption coefficient of α=8000cm-1 was calculated for the absorber layer, calibrated with the experimental laser intensity. This absorption coefficient correctly predicts the silicon temperature as a function of power with any arbitrarily defined scan speed. To investigate the role of dopant activation, an SOI wafer was implanted with arsenic 25 keV, dose 3e15 /1.5e15 cm-2 and laser annealed in areas of target temperatures ranging from 850-1300°C. The sheet resistance was measured using 4-point probe showing sheet resistance improvement with increasing laser temperature. The extracted temperature cycle from the 2D heat simulation was used as an equivalent millisecond RTA in a full 3D process simulation to study dopant distribution and activation using Sentaurus Process Kinetic Monte Carlo (KMC), considering the effect of dopants, dopant clusters, and point defects. The results of this simulation demonstrate deactivation of arsenic above 1050°C, which is inconsistent with Hall measurements that suggest increasing laser temperature will increase mobility and activation. The results are analyzed versus the expected trends and suggest future improvements needed to the KMC model or the laser temperature profiles in order to describe activation kinetics in millisecond anneals within SOI.

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