Gotowe bibliografie tematyczne / (111) Si

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Gotowa bibliografia na temat „(111) Si”

Autor: Grafiati
Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "(111) Si"

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Pervan, P., K. Markert i K. Wandelt. "Photoemission of Xe adsorbed on Si(111)7×7, Ag/Si(111), Au/Si(111) and O/Si(111) surfaces". Applied Surface Science 108, nr 3 (marzec 1997): 307–17. http://dx.doi.org/10.1016/s0169-4332(96)00684-8.

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Бессолов, В. Н., Е. В. Коненкова, T. А. Орлова i С. Н. Родин. "Начальные стадии роста полуполярного AlN на наноструктурированной Si(100) подложке". Физика и техника полупроводников 55, nr 10 (2021): 908. http://dx.doi.org/10.21883/ftp.2021.10.51442.41.

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Методом растровой электронной микроскопии изучались начальные стадии формирования полуполярных AlN(1011) и AlN(1012) слоев при эпитаксии из металлоорганических соединений на подложке Si(100), на поверхности которой сформирована V-образная наноструктура с размером элементов <100 нм (подложка-NP-Si(100)). Показано, что на начальной стадии эпитаксии на подложке-NP-Si(100) происходит формирование зародышевых кристаллов AlN, а затем в зависимости от кристаллографической ориентации V-стенок формируются кристаллы, ограненные плоскостями AlN(1011) на Si(111) или AlN(1012) на Si(111), разориентированном в направлении [110] на 7o. Ключевые слова: полуполярный нитрид алюминия, наноструктурированная подложка кремния.
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Stesmans, A. "The .Si identical to Si3defect at various (111)Si/SiO2and (111)Si/Si3N4interfaces". Semiconductor Science and Technology 4, nr 12 (1.12.1989): 1000–1011. http://dx.doi.org/10.1088/0268-1242/4/12/005.

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Michel, E. G., Th Pauly, V. Eteläniemi i G. Materlik. "Adsorption of I on Si(111) and Si(110) surfaces". Surface Science 241, nr 1-2 (styczeń 1991): 111–23. http://dx.doi.org/10.1016/0039-6028(91)90216-f.

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Michel, E. G., Th Pauly, V. Eteläniemi i G. Materlik. "Adsorption of I on Si(111) and Si(110) surfaces". Surface Science Letters 241, nr 1-2 (styczeń 1991): A5. http://dx.doi.org/10.1016/0167-2584(91)91060-a.

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Inoue, Takahiro, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao i Kentarou Sawano. "(Digital Presentation) Epitaxially Grown of SiGe on Ge Microbridge and Observation of Strong Resonant Light Emission". ECS Transactions 109, nr 4 (30.09.2022): 297–302. http://dx.doi.org/10.1149/10904.0297ecst.

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We observe strong room-temperature photoluminescence from Ge microbridges formed on Ge-on-Si (110). The Si (110) substrate is employed to fabricate the bridge along [111] direction as uniaxial strain in the [111] direction is expected to be the most effective to bring direct transition. In this study, we grow Ge-on-Si with (110) orientation and fabricate MB along the [111] directions. Due to the low etching rate of the (111) plane, however, etching of the Si under the square-shaped pads is quite difficult. By contrast, we fabricate branch-like MB, where the underneath Si was fully etched owing to the various directions of the etching. As a result, we obtained very strong resonant light emission.
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Weilmeier, M. K., W. H. Rippard i R. A. Buhrman. "Ballistic electron transport through Au(111)/Si(111) and Au(111)/Si(100) interfaces". Physical Review B 59, nr 4 (15.01.1999): R2521—R2524. http://dx.doi.org/10.1103/physrevb.59.r2521.

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Koryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov i Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates". Materials 15, nr 18 (6.09.2022): 6202. http://dx.doi.org/10.3390/ma15186202.

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In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC(111¯) facets. The SiC(111)/(111¯) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN(101¯3)||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN(101¯3) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.
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Kochanski, Greg P., i R. F. Bell. "STM measurements of photovoltage on Si(111) and Si(111):Ge". Surface Science 273, nr 1-2 (czerwiec 1992): L435—L440. http://dx.doi.org/10.1016/0039-6028(92)90266-9.

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Hartmann, J. M., M. Burdin, G. Rolland i T. Billon. "Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces". Journal of Crystal Growth 294, nr 2 (wrzesień 2006): 288–95. http://dx.doi.org/10.1016/j.jcrysgro.2006.06.043.

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Rozprawy doktorskie na temat "(111) Si"

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Hadley, M. J. "Scanning tunnelling microscopy of Si(111), Pb-Si(111) and Si(113)". Thesis, University of York, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316178.

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Pettus, Kharissia A. "Abstraction on Si (111)-7x7 and Al(111) /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p9974118.

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Nazir, Z. H. "Surface magnetism of Fe/Si(111) and Fe/Si(100)". Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362272.

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Gregoratti, Luca. "Scanning photoemission microscopy of the silicide phases formed in Ni/Si(111) and Ni+Au/Si(111) systems". Thesis, King's College London (University of London), 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.401781.

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Mikhail, Hanna Degani. "Análise teórica da superfície Si(111)-(7x7)". Universidade Federal de Uberlândia, 2007. https://repositorio.ufu.br/handle/123456789/15681.

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In this work, wecarry out theoretical study of the silicon surface reconstruction (7x7) grown in the [111] direction, denoted by Si(111) (7x7), using the Density Functional Theory formalism, within the Local Density Approximation (LDA) for the exchange correlation term. The interaction with the valence electrons and the core ion (nucleus more core electrons) was described by norm conserving, non local pseudopotential approach, compatible with the LDA. The one electron Kohn Sham equations was solved self consistently, by expanding the one electron functions in terms of linear combination of numerical atomic orbitals. All the calculations were realized using the Siesta computational code. Using the clean surface reconstruction model of Si(111) (7x7), propose by Takayanagi et al.[1, 2], we modeled the surface as a slab, in which the (7x7) unitary cell contained 200 Si atoms distributed in one adatom layer (Si atoms on the topmost layer) and the other four layers, with 49 H atoms used for saturate the dangling bonds of the most internal layer of the slab. The structural analysis of the Si(111) (7x7) reconstructed surface and the electronic structure analysis showed a good agreement with both the experimental and theoretical results disposable, reproducing correctly the band structure, the surface levels and the metallic character of this surface. The obtained energy per surface atom was 1,132 eV with respect to the bulk energy. It was performed the study of the vacancy energy formation of adatoms on this surface. We find an average value of 1,2 eV of a single vacancy formation of adatom the Si(111) (7x7) surface. The analysis of the energy bands made possible to identify the electronic states due to the adatoms dangling bonds. As a first application of the obtained results to the Si(111) (7x7) clean surface, we investigated the possible states of the physisorption of the chlorobenzene molecules on specific sites on the Si(111) (7x7) surface. This study showed that chlorobenzene molecules interact with the surface for distances around 3,0 Å from the adatoms. We also inferred that the triangular faulted subunit sites are energetically most favorable to the adsorption than the correspondent triangular unfaulted subunit sites. We plotted the adsorption energy curve of the chlorobenzene on the corner adatom at the triangular faulted unitary cell (7x7). The equilibrium distance and the adsorption energy obtained was 3,005 Å and 0,161 eV, respectively. The magnitude of this interaction corresponds to a physics adsorption of the chlorobenzene molecule on the Si(111) (7x7) surface.
Neste trabalho, realizamos o estudo teórico da reconstrução (7x7) da superfície de Silício crescida na direção [111], denotada por Si(111) (7x7), utilizando para isto o formalismo da Teoria do Funcional da Densidade, com a Aproximação da Densidade Local (LDA - LocalDensityApproximation) para o termo de troca correlação. A interação entre os elétrons de valência e o íon de caroço (núcleo mais os elétrons de caroço) foi descrita por meio da Teoria dos Pseudopotenciais não locais de norma conservada, compativel com a LDA. As equações de Kohn Sham de um elétron foram resolvidas autoconsistentemente, expandindo as funções de um elétronemtermos de combinação linear de orbitais atômico numéricos, com base double . Todos os cálculos foram realizados utilizando o código computacional Siesta. Utilizando o modelo de reconstrução da superfície livre de Si(111) (7x7), proposto por Takayanagi et al.[1, 2], modelamos a superfície como um slab, cuja célula unitária (7x7) contém 200 átomos de Si distribuidos em uma camada de adatoms (átomos de Si adsorvidos sobre a superfície propriamente dita) e quatro outras camadas, além dos 49 átomos de H usados para saturar as ligações pendentes da camada mais interna ao material. A análise estrutural da superfície reconstruída Si(111) (7x7) e a análise da estrutura eletrônica mostrou ótima concordância tanto com trabalhos experimentais quanto teóricos, reproduzindo corretamente a estrutura de bandas, os níveis de superfície e o caráter metálico desta superfície. A energia obtida em nosso cálculo por átomo da superfície, com relação à energia bulk, foi de 1,132 eV. Foi feito o estudo da energia de formação de vacâncias do tipo adatom. Encontramos um valor médio de 1,2 eV para a formação de uma única vacância do tipo adatom na superfície Si(111) (7x7). A análise da estrutura de bandas do sistema com vacância possibilitou identificar os estados eletrônicos devido às ligações pendentes dos adatoms. Como uma primeira aplicação dos resultados obtidos para a superfície livre de Si(111) (7x7), investigamos possíveis estados de fisiossorção de moléculas de clorobenzeno sobre sítios específicos sobre a superfície de Si(111) (7x7). Este estudo mostrou que as moléculas de clorobenzeno interagem com a superfície para distâncias de aproximadamente 3,0 Å dos adatoms. Também inferimos que sítios da subunidade triangular faulted são mais favoráveis à adsorção do que sítios correspondentes sobre a subunidade triangula unfaulted. Levantamos a curva da energia de adsorção do clorobenzeno sobre o adatom de canto da subunidade triangular faulted da célula unitária (7x7). A distância de equilíbrio e a energia de adsorção obtidas foram 3,005 Å e 0,161 eV, respectivamente. A ordem de grandeza desta interação corresponde a uma adsorção física da molécula de clorobenzeno sobre a superfície Si(111) (7x7).
Mestre em Física
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Mathieu, Gilles. "Étude des interfaces métal noble-semiconducteur : cu/si(111) et au/si(111) par différentes techniques d'analyse de surface". Aix-Marseille 2, 1987. http://www.theses.fr/1987AIX22072.

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Etude experimentale par spectrometrie auger, diffraction d'electrons lents, spectrometrie de pertes d'energie d'electrons, photoemission directe et microscopie electronique en transmission. Analyse des proprietes electroniques pour le systeme cu/si dans le cas d'une monocouche deposee a chaud et a temperature ambiante. Etude de la microstructure de l'interface au/si (111) constituee par une matrice amorphe au/si contenant des microcristallites d'or pur. Caracterisation par microscopie par effet tunnel du systeme au/si (111)
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Wetzel, Patrick. "Etude de l'interface Cr/Si (111) par photoémission angulaire et diffraction d'électrons lents : épitaxie des siliciures Cr Si et Cr Si2 sur Si (111)". Mulhouse, 1988. http://www.theses.fr/1988MULH0077.

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Etude de la structure électronique et cristallographique de l'interface métal-semiconducteur Cr/Si (111). Deux paramètres gouvernent essentiellement cette structure : le recouvrement de Cr et la température de recuit. Un processus de réaction à l'interface et de diffusion des atomes Si à travers le film métallique est mis en évidence à température ambiante. L'interface formée à haute température (350°C < T < 450°C) est caractérisée par la croissance de siliciures (CrSi, CrSi2) polycristallins, pour des recouvrements supérieurs à 30 monocouches de Cr et de siliciures monocristallins épitaxiques pour des recouvrements inférieurs
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Spence, David John. "STM and MEIS studies of the Ag/Ge(111) and Pb/Si(111) systems". Thesis, University of York, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286036.

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Reis, Roberto Moreno Souza dos. "Síntese de SiC por implantação iônica de carbono em SIMOX(111) e Si(111)". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/16135.

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SiC é um semicondutor promissor para dispositivos eletrônicos de alta-potência, alta-freqüência e alta temperatura e a síntese de uma camada epitaxial de SiC por implantação, na superfície do Si, pode ser uma via de integração com a tecnologia de Si. Implantação em alta temperatura (600°C) através de uma capa de SiO2, recozimento pós-implantação a 1250°C sob um ambiente de Ar (com 1% de O2) e ataque químico são a base da presente síntese. Implantações à energia de 40 keV foram executadas em substratos SIMOX(111) e Si(111), cobertos com uma capa de 100 nm de SiO2. Implantação em SIMOX foi o foco principal. Isto nos permitiu obter uma camada sintetizada de SiC separada do Si bulk e analisar as conseqüências estruturais. Neste caso, foi produzida a conversão da camada superior de 65 nm de Si superior da estrutura SIMOX em 30-45 nm de SiC. Implantações seqüenciais de C (passos de fluências de ~ 5 × 1016 C/cm2), seguidas por recozimento à 1250°C, permitiu estimar as fluências mínimas de C para atingir a estequiometria como 2,3 × 1017 C/cm2 e 2,8 × 1017 C/cm2, quando implantado em SIMOX e em Si, respectivamente. Espectrometria de Retroespalhamento de Rutherford (RBS) foi empregada para medir a evolução composicional da camada. Pela análise das implantações seqüenciais, foi possível compreender a redistribuição de carbono durante a implantação e recozimento. Uma estrutura de duas camadas é observada no SiC sintetizado separado do Si bulk, sendo a camada superficial mais rica em Si. Microscopia Eletrônica de Transmissão (TEM) mostrou que as camadas sintetizadas são sempre cúbicas e epitaxiais à estrutura original do Si. TEM também mostrou que as implantações diretas, até as fluências mínimas, resultam em uma melhor qualidade estrutural. Para uma fluência muito mais alta (4 × 1017 C/cm2), uma camada completamente estequiométrica é obtida, com redução na qualidade estrutural. Nossos resultados indicam que o excesso de carbono é o principal fator determinante da qualidade cristalina final do SiC sintetizado por feixe de íons, quando comparado ao stress, resultante de um casamento de redes forçado entre o substrato Si e o SiC sintetizado.
SiC is a promising semiconductor for high-power, high-frequency and hightemperature electronic devices and the synthesis of an epitaxial layer of SiC by implantation, on the surface of Si, can be a route for integration with the Si technology. High temperature implantation (600oC) through a SiO2 cap, 1250oC post-implantation annealing under Ar ambient (with 1% of O2), and chemical etching are the base for the present synthesis. 40 keV carbon implantations were performed into SIMOX(111) and Si(111) substrates covered with a 100 nm SiO2 cap. Implantation into SIMOX was the main focus. It has allowed us to obtain a SiC synthesized layer separated from the bulk silicon and to analyze the structural consequences. In this case, it was performed the conversion of a 65 nm Si(111) overlayer of a SIMOX(111) into 30-45 nm SiC. Sequential C implantations (fluence steps of about 5 × 1016 C/cm2), followed by 1250oC annealing, has allowed to estimate the minimum C fluences to reach the stoichiometric composition as 2.3 × 1017 C/cm2 and 2.8 × 1017 C/cm2, when implanting into SIMOX and into Si, respectively. Rutherford Backscattering Spectrometry (RBS) was employed to measure layer composition evolution. By analyzing the sequential implantations it was possible to understand the carbon redistribution during implantation and annealing. A two-sublayers structure is observed in the synthesized SiC separated from the bulk Si, being the superficial one richer in Si. Transmission Electron Microscopy (TEM) has shown that the synthesized layers are always cubic and epitaxial to the original Si structure. TEM also show that single-step implantations, up to the minimum fluences, result in better structural quality. For a much higher C fluence (4 × 1017 C/cm2), a whole stoichiometric layer is obtained, with reduction of structural quality. Our results indicate that excess of carbon content is the major detrimental factor to determine the final crystalline quality in SiC ion beam synthesis, as compared to the stress, resulting from a forced lattice matching between the Si substrate and the synthesized SiC.
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Anderson, Sarah. "Second-harmonic generation as a probe of chemically modified Si(111) surfaces and the initial oxidation of hydrogen terminated Si(111)". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ59270.pdf.

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Książki na temat "(111) Si"

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Terakawa, Shigemi. Structure and Electronic Properties of Ultrathin In Films on Si(111). Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6872-3.

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Stolwijk, Sebastian David. Spin-Orbit-Induced Spin Textures of Unoccupied Surface States on Tl/Si(111). Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18762-4.

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A mi tuo fo: Chang jian 111 zun fo de zhi si yu bai qiu fa. Chongqing: Chongqing chu ban she, 2009.

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Lamdu heṭev: ʻezer le-limud, le-shinun ṿela-ḥazarah : ʻal Yoreh deʻah ḥ. 1., Hilkhot baśar be-ḥalav ṿe-taʻarovot, si. 87-111. Spring Valley, NY: T. Schlesinger, 2010.

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Schlesinger, T. Sefer Limdu heṭev: ʻezer le-limud, le-shinun ṿela-ḥazarah : ʻal Yoreh deʻah ḥ. 1, Hilkhot baśar be-ḥalav ṿe-taʻarovot, si. 67-111 ... : ʻIyun heṭev ... Ṿe-darashta heṭev ... Monsi--Spring Ṿali, N.Y: Ṭoviy. ben Yeshaʻy. Shlezinger, 2010.

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Jefferson, Thomas A., James G. Mead i Carl C. Kinze. Nomenclature of the Larger Toothed Whales (Odontocetes): A Historical Review. Washington, D.C.: Smithsonian Institution Scholarly Press, 2023. http://dx.doi.org/10.5479/si.21954029.

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More than 100 species of large odontocete cetaceans (i.e., families Ziphiidae, Physeteridae, and Kogiidae) have been described since our binomial nomenclatorial system was initiated by Carl Linnaeus in 1758. Only a fraction of these are currently recognized as valid species. The taxonomic revisions that are being recommended by recent and ongoing studies within this group require a detailed understanding of their nomenclatural history. We here review all 114 nominal species of extant beaked and sperm whales. Of these, 27 species are currently considered valid, 6 are nomina dubia, 10 are nomina nuda, and the rest (71) are junior synonyms. In addition, we provide several appendices that attempt to settle the controversy over the name of the sperm whale (Physeter macrocephalus), provide biographies of the main authors of names, give a glossary of terms, and summarize information on the status of type specimens. Because beaked whales are still so poorly known, there are likely to be future splits and descriptions of new species and/or subspecies. This paper is intended to assist in sorting out nomenclature in such taxonomic cases.
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Malatrait, Solveig Kristina. "Si fier tornei": Benoîts ,Roman de Troie' und die höfische Kultur des 12. Jahrhunderts. Hamburg: Hamburg University Press, 2011.

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Amoyal, Yiśraʼel. Sefer Horaʼah berurah: ʻal Shulḥan ʻarukh Yoreh deʻah : beʼur divre Maran ṿeha-Rama, z.y. ʻa. a., ṿe-asefat dinim (kolel sheʼelot aḳṭuʼaliyot), lefi minhage ha-Sefaradim ṿeha-Ashkenazim ... si. 98-111, Hilkhot taʻarovot. Bene Beraḳ: Mekhon ha-Rav Matsliaḥ, 2012.

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Jiaying, Lin, i Park Jongsung, red. 101 ge bu ke si yi. Taibei Shi: Fei bao guo ji wen hua gu fen you xian gong si, 2005.

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Li Yu mei xue si xiang yan jiu. Beijing: Zhongguo she hui ke xue chu ban she, 1998.

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Części książek na temat "(111) Si"

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Esser, N., i E. Speiser. "Clean Si(111)". W Physics of Solid Surfaces, 569–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_136.

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Esser, N., i E. Speiser. "As-terminated Si(111)". W Physics of Solid Surfaces, 585–87. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_139.

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Esser, N., i E. Speiser. "In-terminated Si(111)". W Physics of Solid Surfaces, 588–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_140.

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Esser, N., i E. Speiser. "Au-terminated Si(111)". W Physics of Solid Surfaces, 594–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_141.

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Shkrebtii, A., F. Filippone i A. Fasolino. "Homopolar cubic semiconductors: clean silicon surfaces Si(100), Si(110), and Si(111)". W Physics of Solid Surfaces, 85–94. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_16.

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Chiaradia, P. "8.2.2.1.8 Si(111)-(2×1)". W Physics of Solid Surfaces, 479–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_126.

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Chiaradia, P. "8.2.2.1.9 Si(111)-(7×7)". W Physics of Solid Surfaces, 481–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_127.

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Yasunaga, H., i Nan-Jian Wu. "Hetero-electromigration on Stepped Si(111)". W Ordering at Surfaces and Interfaces, 263–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84482-9_29.

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Mönch, Winfried. "Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces". W Semiconductor Surfaces and Interfaces, 219–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04459-9_11.

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Mönch, Winfried. "Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces". W Semiconductor Surfaces and Interfaces, 174–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-02882-7_11.

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Streszczenia konferencji na temat "(111) Si"

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Yang, J. M., J. W. Kim, A. Wilke, O. Seifarth i T. Schroeder. "Interface analysis of epi-Si(111)/Y2O3/Pr2O3/Si(111) heterostructures". W 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2011). IEEE, 2011. http://dx.doi.org/10.1109/ipfa.2011.5992761.

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Handa, H., R. Takahashi, S. Abe, K. Imaizumi, M. H. Jung, S. Ito, H. Fukidome i M. Suemitsu. "TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)". W 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.h-2-4.

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Moraru, D., H. Kato, S. Horiguchi, Y. Ishikawa, H. Ikeda i M. Tabe. "Fowler-Nordheim current oscillations in Si(111)/SiO2/twisted-Si(111) tunneling structures". W 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.g-2-8.

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AOTO, Nahomi, Eiji IKAWA i Yukinori KUROGI. "Electron Spectroscopy Study of CI/Si Reaction on Si(111), Si(100) and Si(110) Surfaces". W 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.s-iii-11.

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GALKIN, N. G., A. M. MASLOV, S. I. KOSIKOV, A. O. TALANOV i K. N. GALKIN. "MORPHOLOGY AND OPTICAL PROPERTIES OF Si(111)/CrSi2/Si AND Si(111)/Mg2Si/Si SYSTEMS WITH SELF-ORGANIZED QUANTUM DOTS". W Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0033.

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Terai, Y., H. Hoshida, R. Kinoshita, A. Shevlyagin, I. Chernev i A. Gouralnik. "Photoreflectance Spectra of Highly-oriented Mg2Si(111)//Si(111) Films". W The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019). Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/jjapcp.8.011004.

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Galkin, N. G., S. A. Dotsenko, K. N. Galkin, L. Dózsa, I. Cora i B. Pécz. "Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi2/Si(111) heterostructures". W Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC Silicide 2016). Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/jjapcp.5.011403.

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GALKIN, N. G., D. L. GOROSHKO, A. S. GOURALNIK, V. O. POLYARNYI, S. V. VAVANOVA i I. V. LOUCHANINOV. "SILICON GROWTH ATOP β-FeSi2 ISLANDS ON Si(111) SUBSTRATE AND Si(111)-Cr SURFACE PHASES". W Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0034.

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Xu, Run, Jiaming Xie, Minyan Tang, Yanyan Zhu i Lin-jun Wang. "The growth of Si overlayers on Er 2 O 3 (111)/Si (111) by solid phase epitaxy". W Seventh International Conference on Thin Film Physics and Applications, redaktorzy Junhao Chu i Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888362.

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AIZAWA, Koji, Tatsuya ICHIKI i Hiroshi ISHIWARA. "Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures". W 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.s-i-10-4.

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Raporty organizacyjne na temat "(111) Si"

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Stanley, M. K. RHEED studies of vicinal Si(111) surfaces and Ag films grown on Si(111). Office of Scientific and Technical Information (OSTI), luty 1998. http://dx.doi.org/10.2172/671996.

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CALIFORNIA UNIV SANTA BARBARA. Lateral Epitaxial Overgrowth of GaN on Si(111). Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1998. http://dx.doi.org/10.21236/ada353896.

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Shuh, David K., Robert M. Charatan, Richard S. Daley i R. S. Williams. Growth and Reactivity of CuCl on Si(111). Fort Belvoir, VA: Defense Technical Information Center, lipiec 1990. http://dx.doi.org/10.21236/ada225034.

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Belianinov, Aleksey. Ag on Si(111) from basic science to application. Office of Scientific and Technical Information (OSTI), styczeń 2012. http://dx.doi.org/10.2172/1048520.

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Wallace, R. M., P. A. Taylor, M. J. Dresser, W. J. Choyke, J. T. Yates i Jr. Background Effects in ESDIAD Measurements on Si(111)-(7x7). Fort Belvoir, VA: Defense Technical Information Center, maj 1990. http://dx.doi.org/10.21236/ada222242.

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Koehler, Ulrich. RHEED studies of Ag/Si(111) growth at low temperatures. Office of Scientific and Technical Information (OSTI), styczeń 1996. http://dx.doi.org/10.2172/215802.

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Vitkavage, Susan C., Eugene A. Irene i Hisham Z. Massoud. An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon. Fort Belvoir, VA: Defense Technical Information Center, grudzień 1990. http://dx.doi.org/10.21236/ada231244.

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Paggel, J. J., M. Hasselblatt i K. Horn. Detection of subsurface core-level shifts in Si 2p core-level photoemission from Si(111)-(1x1):As. Office of Scientific and Technical Information (OSTI), kwiecień 1997. http://dx.doi.org/10.2172/603503.

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Cahill, David G., i R. J. Hamers. Surface Photovoltage of Ag on Si(111)-7X7 by Scanning Tunneling Microscopy. Fort Belvoir, VA: Defense Technical Information Center, maj 1991. http://dx.doi.org/10.21236/ada236971.

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Kaloyeros, A., S. Endisch i A. Topol. Metal-Organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1998. http://dx.doi.org/10.21236/ada353993.

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