Tesi sul tema "ZnSeS"
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Mabrouk, Salima. "Synthèse par voie colloïdale et étude des propriétés optiques et structurales de nanocristaux ternaires ZnSeS dopés". Electronic Thesis or Diss., Université de Lorraine, 2022. http://www.theses.fr/2022LORR0169.
In recent years, ternary QDs have experienced an exponential development thanks to their properties, especially their photoluminescence, which can be controlled not only by their size but also by their composition. As part of this thesis, we developed a new "green" synthesis in aqueous media of ZnSeS-doped ternary QDs and we studied the effect of the variation of the dopant (Mn2+, Cu2+, or Cu2+/Al3+) as well as its localization (in the core or in the shell) on their optical and structural properties. The first part of this work describes the synthesis of ZnSeS:Mn ternary QDs and ZnSeS:Mn/ZnS core/shell using 2-MPA as a ligand. The results obtained show that these nanocrystals can be prepared with quantum yields of 22% and 41%, respectively. These QDs have shown excellent photostability under UV irradiation and can easily be transferred to the organic phase using the hydrophobic octanethiol ligand without altering their optical properties. Subsequently, core/shell ZnSeS/ZnS:Cu/ZnS QDs for which the Cu dopant is introduced into the first shell were prepared using 3-MPA as a ligand. Excellent (photo)stability in the presence of air and oxygen was observed. ZnSeS/ZnS:Cu/ZnS core/shell QDs have a 20% photoluminescence quantum yield and have been used as photoluminescent probes for the detection of Pb2+ ions in aqueous media. A selective extinction of the photoluminescence emission in the presence of Pb2+ ions was observed. Finally, Cu and Al co-doped QDs, ZnSeS/ZnS:Cu/ZnS:Al/ZnS (first shell doped with Cu2+ and second shell doped with Al3+) were prepared. Co-doping allows the improvement of the optical properties, including quantum efficiency (up to 32%) as well as the photoluminescence lifetime of Cu-doped QDs
Suthagar, J., e Kissinger J. K. Suthan. "Synthesis and Characterization of ZnSe1-xTex Alloy Thin Films Deposited by Electron Beam Technique". Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35012.
Boemare, Claude. "Etude des propriétés optiques d'hétérostructures basées sur les semiconducteurs ZnSe, ZnSSe, ZnMgSSe élaborés par MOVPE". Montpellier 2, 1996. http://www.theses.fr/1996MON20222.
Кравченко, Владислав Миколайович. "Інфрачервона фотолюмінісценція кристалів ZnSe i ZnSe(Te)". Dissertazione di Candidato in Scienze Fisiche e Matematiche, КУ ім Т. Шевченка, 1999.
Wang, Shouyin. "Characterisation of ZnSe and ZnCdSe/ZnSe opto-electronic devices". Thesis, Heriot-Watt University, 1994. http://hdl.handle.net/10399/1394.
Doughery, David J. (David Jordan). "Femtosecond optical nonlinearities in ZnSe and characterization of ZnSe/GaAs heterostructures". Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/42617.
Abolhassani, N. "Cathodoluminescence of ion-implanted ZnSe". Thesis, University of Hull, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375624.
Milward, Jonathan Ray. "Electronic optical nonlinearities in ZnSe". Thesis, Heriot-Watt University, 1991. http://hdl.handle.net/10399/858.
Meredith, Wyn. "II-VI blue emitting lasers and VCSELs". Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/695.
Makuc, Boris. "Photoluminescence of ZnSe grown by MOVPE". Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61819.
House, Jody L. (Jody Lee) 1970. "Optical characterization of ZnSe by photoluminescence". Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/36430.
Poolton, N. "ODMR studies of recombination emission bands in ZnSe and ZnS". Thesis, University of Hull, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381883.
Merveille, Christiaan. "Nanosecond-scale nonlinear-optical properties of electronic origin of ZnSe and of ZnSe(Zn,Cd)Se MQW-structures". Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/636.
Curran, Arran. "Exciton-photon hybridisation in ZnSe based microcavities". Thesis, Heriot-Watt University, 2008. http://hdl.handle.net/10399/2169.
Sutton, Rebecca Suzanne. "Dual-emitting Cu-doped ZnSe/CdSe nanocrystals". Thesis, Kansas State University, 2015. http://hdl.handle.net/2097/19047.
Department of Chemistry
Emily McLaurin
Cu-doped ZnSe/CdSe core/shell nanocrystals were synthesized using the growth doping method. Upon shell growth, the nanocrystals exhibit dual emission. The green luminescence peak is assigned as band edge emission and the broad, lower energy red peak is due to Cu dopant. Although, the oxidation state of Cu in the nanocrystals is debated, the emission is explained as recombination of a hole related to Cu²⁺ with an electron from the conduction band. The emission changed in the presence of dodecanethiol. Generally, the band edge emission intensity decreases and the Cu emission intensity increases. One explanation is the thiol acts as a hole trap, preventing hole transfer to the conduction band. Samples were obtained with varying amounts of Cd²⁺. In the presence of larger amounts of Cd²⁺, the nanocrystals had “thicker shells”, and both the band edge and Cu emission were less sensitive to thiol. The sensitivity likely decreased because the shelled, larger nanocrystals have fewer surface defects resulting in more available electrons.
Hauksson, Isak Sverrir. "Investigation of spontaneous and stimulated emission from ZnSe epilayers and ZnCdSe-ZnSe quantum well systems grown by molecular beam epitaxy". Thesis, Heriot-Watt University, 1996. http://hdl.handle.net/10399/749.
Adegoke, Oluwasesan, Tebello Nyokong e Patricia B. C. Forbes. "Deposition of CdS, CdS/ZnSe and CdS/ZnSe/ZnS shells around CdSeTe alloyed core quantum dots: effects on optical properties". Wiley, 2015. http://hdl.handle.net/10962/d1020342.
Original publication is available at http://dx.doi.org/10.1002/bio.3013
Hellig, Kay. "Untersuchung tiefer Stoerstellen in Zinkselenid". Thesis, Universitätsbibliothek Chemnitz, 1997. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-199700176.
Eisele, Wolfgang. "Struktur und Funktion von ZnSe-Pufferschichten in Chalkopyritdünnschichtsolarzellen". [S.l. : s.n.], 2002. http://www.diss.fu-berlin.de/2003/36/index.html.
Jones, A. P. C. "Electroluminescence in epitaxial thin film ZnS and ZnSe". Thesis, Durham University, 1987. http://etheses.dur.ac.uk/6783/.
Batstone, J. L. "Cathodoluminescence and transmission electron microscopy characterization of ZnSe". Thesis, University of Bristol, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355952.
Новикова, Т. В., e В. В. Стариков. "Исследование свойств пленок ZnSe полученных методом электрохимического осаждения". Thesis, Сумский государственный университет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/39811.
Moldovan, Monica. "Photoluminescence investigation of compensation in nitrogen doped ZnSe". Morgantown, W. Va. : [West Virginia University Libraries], 1999. http://etd.wvu.edu/templates/showETD.cfm?recnum=740.
Title from document title page. Document formatted into pages; contains xiv, 154 p. : ill. Includes abstract. Includes bibliographical references (p. 148-154).
Yang, Yaxiang. "FP-LMTO modeling of ZnSe and ZnMgSe alloy". Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=2247.
Title from document title page. Document formatted into pages; contains viii, 113 p. : ill. (some col.). Includes abstract. Includes bibliographical references.
Cloitre, Thierry. "Elaboration par MOVPE des matériaux semiconducteurs II-VI grand gap ZnSe et ZnTe : application à la croissance des superréseaux ZnSe/ZnTe". Montpellier 2, 1992. http://www.theses.fr/1992MON20072.
Hai, Bin. "Development and Implementation of New In Situ Techniques for the Study of Interfacial Phenomena". Case Western Reserve University School of Graduate Studies / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1259695728.
Kießling, Tobias. "Symmetry and Optical Anisotropy in CdSe/ZnSe Quantum Dots". Doctoral thesis, kostenfrei, 2009. http://www.opus-bayern.de/uni-wuerzburg/volltexte/2009/4068/.
Wallace, Julia M. "Growth and characterisation of heteroepitaxial ZnSe and ZnSxSe1-x". Thesis, Heriot-Watt University, 1992. http://hdl.handle.net/10399/806.
Shibli, Suhaila Maluf. "Estudo de processos de dopagem em ZnSe por MBE". [s.n.], 1991. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277225.
Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-07-13T23:09:10Z (GMT). No. of bitstreams: 1 Shibli_SuhailaMaluf_D.pdf: 8066870 bytes, checksum: f0173ac89bce1db0fe8be4118b8eb1a7 (MD5) Previous issue date: 1991
Resumo: Seleneto de zinco, um importante semicondutor do tipo II-VI, é um excelente candidato para fabricação de dispositivos que emitam no azul, devido a sua larga banda proibida de 2,1 eV. No entanto, a aplicação prática deste material em dispositivos de junções p-n requer técnicas de dopagem eficientes que possam produzir materiais dos tipos n e p de baixa resistividade e cuja luminescência perto da borda da banda, a temperatura ambiente, emita predominantemente no azul. Gálio é conhecido como um bom dopante do tipo n para ZnSe, particularmente para epitaxia por feixes moleculares (MBE). A utilização de técnicas de dopagem convencional, com altas concentrações de Ga, introduz níveis de aceitadores profundos, que ocasionam a saturação e correspondente decréscimo nos valores da concentração de portadores e da mobilidade. A descoberta de novas técnicas de dopagem é imprescindível na melhoria da qualidade do material ZnSe. Estudaremos nesta tese o avanço obtido com a técnica de dopagem planar para dopagem tipo n bem como novos dopantes do tipo p para ZnSe
Abstract: Zinc selenide, an important II-VI semiconductor compound, is of great potential interest for blue light-emitting devices due to its large band gap of 2.7 eV. However, practical application of this material in p-n junction injection devices demands effective doping techniques which can produce low-resistivity n- and p-type material, whose luminescence at room temperature is predominantly band edge (blue) in nature. Gallium is known to be a useful n-type dopant for ZnSe, particularly for molecular beam epitaxy (BEM). Using conventional doping techniques, however, high concentrations of Ga introduce deep acceptor levels which cause the carrier concentration to saturate and even decrease, with a corresponding drop in mobility. Thus, new doping techniques are necessary to enhance the quality of ZnSe material. We will study a new technique, planar doping, as well as a p-type dopant for ZnSe
Doutorado
Física
Doutor em Ciências
Rajira, Amal. "Propriétés optiques des superréseaux à base de ZnCdSe/ZnSe". Montpellier 2, 1997. http://www.theses.fr/1997MON20046.
Mathen, J. J., A. J. Augustine, J. Sebastian, J. Madhavan e G. P. Joseph. "Synthesis and Characterization of Polyethylene Vinyl Acetate / ZnSe Nanocomposite". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35635.
Kirsanova, Maria. "ZnSe/CdS Core/Shell Nanostructures and Their Catalytic Properties". Bowling Green State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1342565590.
Van, Zandt Nicholas L. "Aqueous Fabrication of Pristine and Oxide Coated ZnSe Nanoparticles". Wright State University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=wright1623356039586297.
Ryu, Yung-ryel. "Study of epitaxial ZnSe films synthesized by pulsed deposition /". free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901275.
Cai, Yi-Lin, e 蔡宜霖. "Optical Properties of ZnTe/ZnSe1-xTex and ZnSe/Zn1-xMgxSySe1-y Multiple Quantum Well Grown by Molecular Beam Epitaxy". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/42729037420148661155.
中原大學
應用物理研究所
90
Abstract We present photoluminescence (PL) spectra from two sets of samples, ZnTe/ZnSe1-xTex (x = 0.46 and 0.78) and ZnSe/Zn1-xMgxSySe1-y (x = 0.03, y = 0.09) multiple quantum wells (MQW), grown on GaAs (001) substrates by molecular beam epitaxy (MBE). A type II band alignment was found in the ZnTe/ZnSe1-xTex quantum well system. Electron is confined in the ZnSe1-xTex layer while hole is localized in the ZnTe layer. At temperature was above 70~90K, inter-band optical emission intensity dropped rapidly. Activation energies calculated from the arrhenius plot of the integrated PL vary with the ZnSe1-xTex layer thickness. The temperature dependent PL line-width broadening was fitted byΓ(T)=Γ0+Γa T+ΓLO/[exp(ħωLO / kT)-1] + Γi exp(-
Weber, Thomas. "Resonante Lichtstreuung in ZnSe-Epitaxieschichten und ZnSe/ZnS-Quantentrogstrukturen /". 1994. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=006487493&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.
Yang, Cheng-Yu, e 楊正宇. "ZnSeO/GaAs Solar Cells". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/44077735985013342517.
國立中央大學
電機工程研究所
100
To date, materials with intermediate band become potential applications in solar cells because the spectral response could be extended by the intermediate band in the forbidden gap. In this thesis, we first demonstrated the ZnSeO based intermediate band solar cells and its characteristics were particularly investigated. The structural and optical properties of ZnSeO with varying oxygen content were studied in this work. The high absorption coefficients (>104 cm-1) of ZnSeO made it a promising candidate in solar cell. Theoretical calculation based on self-consistent drift-diffusion method was referred in this work. The results showed the conversion efficiency of ZnSeO based solar cell could reach 25 %. To realize the solar cell structure, ZnSeO with n-ZnO window layer were grown on p-GaAs substrate in this study. We also propose Ti/Al/Ni/Au ohmic contact to minimize the series resistance and power consume in solar cells, and low specific contact resistivity of 2.6×10-7 Ω-cm2 could be achieved. The ZnSeO based solar cells exhibit a 16 % increase of the short circuit current and same open circuit voltage in comparison to ZnSe based cells. Thus, a 43 % improvement in conversion efficiency could be obtained. However, existence of intermediate band could not be observed in ZnSeO solar cell because of the quality issues. This work does provide the opportunities for ZnSeO applied in photovoltaic devices.
Chang, Sheng-Po, e 張勝博. "ZnSe-Based Photodetectors". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/66599454397544641518.
國立成功大學
微機電系統工程研究所
94
Abstract In this thesis, properties of Ni/Au contact on homoepitaxial p-ZnSe with oxygen plasma treatments were investigated. It was found that Zn atom distribution profiles for p-ZnSe with and without treatments were almost identical. It was also found that Se concentration near the surface became less while oxygen concentration near the surface became larger after oxygen plasma treatment. We also observed hillocks, which were related to Se vacancies and/or isoelectronic oxygen impurities, on the surface of 15 W oxygen plasma treated sample. Furthermore, it was found that we can achieve lowest offset voltage from the sample treated with 15 W oxygen plasma treatment. Moreover, homoepitaxial and heteroepitaxial ZnSe MSM photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector shows smaller dark current and larger photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivity for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12% respectively. Furthermore, it was found that we achieved the minimum NEP of 7.6×10^-13 W and the maximum D* of 9.3×10^11 cmHz^0.5W^-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9×10^-12 W and 2.44×10^11 cmHz^0.5W^-1, respectively, Then, we reported fabrication of homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au contact electrodes. It was found that barrier heights for electrons were 0.66, 0.695 and 0.715eV for ITO, TiW and Ni/Au on the homoepitaxial ZnSe, respectively. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au contact electrodes were 120, 50.6 and 28.1 mA/W, which corresponds to quantum efficiencies of 33.5, 14 and 8% respectively. For a given bandwidth of 100 Hz and a given bias of 1 V, it was found that the corresponding NEP of our homoepitaxial ZnSe MSM photodetectors with ITO, TiW and Ni/Au electrodes were 8.14×10^-13, 1.73×10^-12 and 9.25×10^-13 W, respectively. Furthermore, it was found that the corresponding D* were 8.7×10^11, 4.09×10^11 and 7.65×10^11 cmHz^0.5W^-1, respectively. Finally, ZnSe MIS photodetectors with SiO2 and BST insulator layers were fabricated on ZnSe substrates. It was found that dark current densities of these MIS photodetectors were at least one order of magnitude smaller than ZnSe Schottky barrier photodetector without the insulator layers. UV-to-visible rejection ratios of these MIS photodetectors were also large. It was found that NEP were 1.24×10^-13 and 1.9×10^-13 for the homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers, respectively. The corresponding D* were 2.55×10^12 and 1.67×10^12 cmHz^0.5W^-1, respectively. These values were better than those observed from the heteroepitaxial ZnSe photodetectors prepared on GaAs substrates.
Wang, Hung Pin, e 王宏斌. "The MBE Growth and Characterization of ZnSe/Glass and ZnSe/GaAs Heterostructure". Thesis, 1996. http://ndltd.ncl.edu.tw/handle/15941779725241587052.
國立中山大學
電機工程研究所
84
Zinc selenide is a wide bandgap II-VI semiconductor.The minimum bandgap at Γpoint (zone center) is direct and has a room temperature value of 2.67eV,corresponding to the blue region of the visible spectrum (464nm). Molecular beam epitaxy(MBE) is an ultra high vacuum technique used for the growth of semiconductors.The molecular beam epitaxy system used for the growth of II-VI semiconductor layers is described in detail in Chapter 2.Chapter 3 describes the substrate preparation procedure and the growth of ZnSe epitaxial layers.
Chen, Wen-Cheng, e 陳文成. "A study of optoelectric characteristics of ZnSe/GaAs and ZnSe/Si heterojunction". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/36729133014797163224.
國立成功大學
電機工程研究所
82
Recently Znic Selenide (ZnSe) has been idely discussed for its wide band gap inoom temperature (Eg=2.67 ev),this materials potentially useful for short wave lengthptoelectric devides. P- type ZnSe is diffi-ult to fabricated for the problem of self- ompensation, so far. We will evaporationhe ZnSe thin film by the laser evaporationethod and discuss the ZnSe/GaAs and ZnSe/ i heterojunction optoelectric characte-istics. We will measure the X-Ray, EDS, SEM tonderstand the crystallization, compositionnd surface morphology of ZnSe. Measuringhe mobility, conductive type and carrieroncentration by Hall Measurement. Usinghe 370A Programmable Curve Tracer toeasure the ohmic contact and I-V curve.
LIN, BENG-LI, e 林耿立. "ZnSe heteroepitaxy by MOCVD". Thesis, 1991. http://ndltd.ncl.edu.tw/handle/46499389925052108498.
Chen, Hsing-Hung, e 陳星宏. "Optical characteristics of ZnSeO thin film". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/77649431254425017235.
國立中央大學
物理研究所
98
In this thesis, we have studied the optical characteristics of ZnSe1-xOx thin film (0≦x≦0.097) by using Photoluminescence (PL)spectroscopy and Photoreflectance (PR) spectroscopy. We observe the band gap decreases dramatically with increasing oxygen concentration by PL at room temperature, which can be explained by the band anticrossing model. We observe the S-shaped PL peaks (0＜x≦0.070) evolve with temperature, we have considered this phenomenon which transits from localized exciton to free exciton. We have used PR to obtain the band gap of these samples. We have used the band anticrossing model to analyze these signals from PL and PR.
Lai, Chiwen, e 賴麒文. "Band gap structure of ZnSeO alloys". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/35718770479941769873.
國立中央大學
物理研究所
99
This thesis mainly focuses on the direct band gap analysis of ZnSe1-xOx alloys (x=0~0.07) through photoreflectance (PR) spectroscopy and photoluminescence (PL) spectroscopy. The band gap of alloys decreases significantly with increasing oxygen concentration at room temperature, which agrees with the band anticrossing model (BAC). In higher temperature range (150~300K), the BAC model well predicts the oxygen concentration which consists with experimental results under X-Ray diffraction (XRD) examination. However, when the temperature is under 150K, BAC model underestimates the drastic band gap tendency which is closer to the behavior of the host material ZnSe. This deviation from BAC model may associate with the localized state properties of ZnSe1-xOx alloys.
Ke, Hong-hsien, e 柯宏憲. "Raman spectroscopic analysis of ZnSeO alloys". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/40052858533889557865.
國立中央大學
物理研究所
100
The oxygen concentrations of ZnSe1-xOx alloys studied in this thesis are in the range of 1.5%
Lin, Kun-Zheng, e 林坤政. "Temperature-dependent Raman scattering of ZnSeO". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/65299621851060405488.
國立中央大學
物理學系
101
The oxygen concentrations of ZnSe1-xOx alloys studied in this thesis are in the range of 1.5%x11.6%. Because of the limited oxygen solubility, Nabetani had proposed that ZnSeO alloy composition up to 6.4%. Our highest concentration up to 11.6%.In our previous study indicate the results of photoluminescence (PL) indicate that the relationship between band gap and oxygen composition can be well described in the framework of band anti-crossing model (BAC model). However, the full width of half maxima (FWHM) of signals becomes broader and the intensities become weaker in the higher O concentration range. These results indicate that the crystal structures may have changed. Thus we investigated the crystal structure via Raman spectrum. In 10K Raman scattering experiments, the phonon frequency is influenced by strain and effective mass. With ZnSe mixes O, the phonon frequency become slower than ZnSe, but when oxygen concentration higher than 9.3%, the frequency is dominated by effective mass. The phonon frequency becomes faster. In temperature-dependent Raman scattering, we can find as the oxygen concentration increases, the anharmonic effect will increase. Besides, the FWHM of LOZnSe becomes broader than ZnSe. In the end, we will discuss optical phonon life time. When increasing the oxygen concentration, the life time will become shorter than ZnSe.
Hwang, Ching Yuan, e 黃慶源. "Growth of ZnSe/CuInSe2 Heterostructure". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/83495914473702601975.
國立中山大學
材料科學(工程)研究所
83
Sb 改善了 p-type CuInSe2 薄膜的表面形貌、 晶粒結構及結晶性，但並 未影響到薄膜的導電特性，我們相信此一結果對整個元件的能量轉換效率 應有很大的改善， 為了證明此觀點， 我們將製作一 ZnSe/ CuInSe2 異質接面 (Heterojunction) 的太陽電池，然後我們將針對上述兩 種 CuInSe2 薄膜所構成的太陽電池的光電伏特 (photovoltaic) 特性加以比較。 但是當我們製作 ZnSe 歐姆接觸 (ohmic contact) 之時碰到了電阻率無法降低之困擾，因此我們試著改 良 ZnSe 之成長條件來降低電阻率，但是卻沒有得到具有良好光電特性之 薄膜，其電阻率也無法以 four point probe 量測，其 PL 光譜除了出 現 2.79eV 之束縛激子放射 (bound-exciton emission) 峰，尚存在許多 深層能階 (deep level)。 一般的三五或一三六半導體材料， 在 MBE 之 非平衡狀態下成長時，其內部均存在了一些深層能階，當經過適當時間的 退火處理時均可達成平衡狀態，因而消除了深層能階， 而得到強度非常 大的 band-edge emissiom，因此改良了薄膜的品質； 但是當我們嘗試以 退火 (annealing) 處理來改良其光電特性時， 卻無法得到預期的結果 ， 這是因為 ZnSe 內部缺陷 (defect) 結構相當的複雜易與雜質形 成複合缺陷， 這些缺陷會相互牽制，當我們以熱處理降低某些缺陷能階 ，另一種缺陷能階之濃度則相對地增強，因此我們無法以退火過程來徹底 去除其缺陷能階，所以唯有在 MBE 之非平衡狀態下，利用高純度的固體 源， 低污染的成長環境， 並準確的控制 Zn、 Se 流量比， 才較有可 能成長出高品質 ZnSe 薄膜。
Zeng, Jia-Min, e 曾家珉. "Optical properties of circular polarization of ZnSe/ZnTe Quantum dots/ZnSe type II semiconductor heterostructures". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/38867015373703174067.
國立臺灣大學
應用物理所
102
Spin polarization of light emission arising from self-assembled ZnTe/ZnSe quantum dots grown by molecular beam epitaxy is investigated. It is found that the magnitude and sign of the degree of spin polarization can be drastically manipulated by excitation wavelength. The underlying mechanisms can be explained well based on the combination of band alignment, energy level splitting, as well as selection rule of optical transitions. The unique tunability of spin polarization of light emission by excitation wavelength adds an unprecedented feature to semiconductor materials, which have been studies for quite a long time. It is believed that the results obtained in this study will pave a key step for the development of optospintronics.
Huang, Hon Da, e 黃宏達. "ZnSSe epilayers grown on GaP by MOCVD". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/53353360920164224227.
國立中山大學
電機工程研究所
82
ZnSxSe1-x with its variation in energy gap from 2.68 to 3.68 eV at room temperature which ranges from blue to ultraviolet region is an attractive candidate for short wavelength light emitting devices. However, reports on ZnSxSe1-x with wider band- gap are scarce. In this study, ZnSxSe1-x epilayers have been successfully grown on GaP 5 oriented [110] by metalorganic chemical vapor deposition (MOCVD) using diethylzinc (DEZn), hydrogen sulfur(H2S) and hydrogen selenide (H2Se). Photoluminescence spectrum of ZnS0.88Se0.12 lattice-matched to GaP shows a strong peak at 3.3 eV with FWHM of 67.4 meV and negligible broadband. The quality of the epilayers was found to be improved around the composition (x=0.88) lattice-matching to GaP substrate. Unif- ormity of the epilayers is confirmed by secondary ion mass spect- rometry (SIMS) and Auger electron spectrometry (AES) In addition, solid-vapor distribution function (SVDF) for MOCVD growth ZnSxSe1-x using DEZn, H2S, H2 Se as sources has been studied. From SVDF, Se is found to be preferentially incorpora- ted. Finally, we plotted out the 77 K near-band emission energy as a function of composition x. The bowing parameter is found to be 0.61.
Qiu, Yu-Dong, e 邱昱棟. "Electrode properties of ZnSe/graphene nanocomposite". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/978965.
國立雲林科技大學
材料科技研究所
105
In this study, we synthesized ZnSe/graphene composites by a hydrothermal process. First we used zinc sulfate (ZnSO4•7H2O) and sodium selenite (Na2SeO3) as precursors, diethylenetriamine (DETA) and hydrazine (N2H4) as reducing agents to prepare ZnSe(DETA)-N2H4.In addition, graphene oxide (GO) and ZnSe(DETA)-N2H4 mixed together as precursors, ZnSe/graphene composites were prepared at 180℃ for 12 hours by a hydrothermal process. To explore different amount of hydrazine (4~6ml) and different graphene oxide with zinc selenide proportion (0.25 to 1.5) of ZnSe/graphene composites.The samples were characterized by XRD, SEM.The results show that the ZnSe/graphene which synthesized by 5ml-ZnSe(DETA)-N2H4 and graphene oxide in a weight ratio 1: 1.25 have the best electrochemical activity. Sensing the current response of hydrogen peroxide (H2O2), the results show that 5ml ZnSe-GN 1: 1.25, for hydrogen peroxide sensing, has a good catalytic capacity and the best current. Keyworlds: grapheme, graphene oxide, zinc selenide, electrochemical activity,electrochemical sensor,H2O2
Chang, Hsiang-Si, e 張翔思. "The optical property of ZnSe epilayer". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/26196748267562251716.
國立中央大學
物理研究所
90
We use modulation spectrum to study the ZnSe epilayer with two thickness(150 nm and 500 nm) When ZnSe thickness is 150 nm,we find that it is pseudomophic growth. When ZnSe thickness is 500 nm,we find that it should be pseudomophic at ZnSe/GaAs interface,and it should be relaxed at ZnSe surface.