Articoli di riviste sul tema "Ultrathin oxides"
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Bec, Romulad B., Andrzej Jakubowsk, Lidia Łukasiak e Michał Korwin-Pawłowski. "Challenges in ultrathin oxide layers formation". Journal of Telecommunications and Information Technology, n. 1 (30 marzo 2001): 27–34. http://dx.doi.org/10.26636/jtit.2001.1.46.
Taylor, Seth T., John Mardinly e Michael A. O'Keefe. "HRTEM Image Simulations for the Study of Ultrathin Gate Oxides". Microscopy and Microanalysis 8, n. 5 (ottobre 2002): 412–21. http://dx.doi.org/10.1017/s1431927602020123.
Morgen, P., A. Bahari, U. Robenhagen, J. F. Andersen, J. K. Hansen, K. Pedersen, M. G. Rao e Z. S. Li. "Roads to ultrathin silicon oxides". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, n. 1 (gennaio 2005): 201–7. http://dx.doi.org/10.1116/1.1842113.
Huang, Feng, W. J. Liu, J. F. Sullivan, J. A. Barnard e M. L. Weaver. "Room-temperature oxidation of ultrathin TiB2 films". Journal of Materials Research 17, n. 4 (aprile 2002): 805–13. http://dx.doi.org/10.1557/jmr.2002.0118.
Zhu, Jianhui, Jian Jiang, Wei Ai, Zhanxi Fan, Xintang Huang, Hua Zhang e Ting Yu. "Encapsulation of nanoscale metal oxides into an ultra-thin Ni matrix for superior Li-ion batteries: a versatile strategy". Nanoscale 6, n. 21 (2014): 12990–3000. http://dx.doi.org/10.1039/c4nr03661a.
Wang, Kai, Bolong Huang, Weiyu Zhang, Fan Lv, Yi Xing, Wenshu Zhang, Jinhui Zhou et al. "Ultrathin RuRh@(RuRh)O2 core@shell nanosheets as stable oxygen evolution electrocatalysts". Journal of Materials Chemistry A 8, n. 31 (2020): 15746–51. http://dx.doi.org/10.1039/d0ta03213a.
Ting, D. Z. Y. "Tunneling characteristics of nonuniform ultrathin oxides". Applied Physics Letters 73, n. 19 (9 novembre 1998): 2769–71. http://dx.doi.org/10.1063/1.122585.
Lobinsky, A. A., e V. I. Popkov. "Ultrathin 2D nanosheets of transition metal (hydro)oxides as prospective materials for energy storage devices: A short review". Electrochemical Materials and Technologies 1, n. 1 (2022): 20221008. http://dx.doi.org/10.15826/elmattech.2022.1.008.
Rotondaro, A. L. Pacheco, R. T. Laaksonen e S. P. Singh. "Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor Parameters". Journal of Integrated Circuits and Systems 2, n. 2 (17 novembre 2007): 63–66. http://dx.doi.org/10.29292/jics.v2i2.265.
Chari, K. S., e S. Kar. "Interface Characteristics of Metal‐Oxide‐Semiconductor Capacitors with Ultrathin Oxides". Journal of The Electrochemical Society 138, n. 7 (1 luglio 1991): 2046–49. http://dx.doi.org/10.1149/1.2085921.
Ting, D. Z. Y., Erik S. Daniel e T. C. Mcgill. "Interface Roughness Effects in Ultra-Thin Tunneling Oxides". VLSI Design 8, n. 1-4 (1 gennaio 1998): 47–51. http://dx.doi.org/10.1155/1998/23567.
Choi, B. D., e D. K. Schroder. "Degradation of ultrathin oxides by iron contamination". Applied Physics Letters 79, n. 16 (15 ottobre 2001): 2645–47. http://dx.doi.org/10.1063/1.1410363.
Donggun Park e Chenming Hu. "Plasma charging damage on ultrathin gate oxides". IEEE Electron Device Letters 19, n. 1 (gennaio 1998): 1–3. http://dx.doi.org/10.1109/55.650333.
Wen, H. J., e R. Ludeke. "Localized degradation studies of ultrathin gate oxides". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, n. 3 (maggio 1998): 1735–40. http://dx.doi.org/10.1116/1.581293.
Eng, J., R. L. Opila, J. M. Rosamilia, B. J. Sapjeta, Y. J. Chabal, T. Boone, R. Masaitis, Thomas Sorsch e Martin L. Green. "The Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic Characterization". Solid State Phenomena 76-77 (gennaio 2001): 145–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.145.
Takeda, Mikako, Takeshi Ohwaki, Hideo Fujii, Eisuke Kusumoto, Yoshiyuki Kaihara, Yoshizo Takai e Ryuichi Shimizu. "Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide". Japanese Journal of Applied Physics 37, Part 1, No. 2 (15 febbraio 1998): 397–401. http://dx.doi.org/10.1143/jjap.37.397.
Hamed, Mai Hussein, David N. Mueller e Martina Müller. "Thermal phase design of ultrathin magnetic iron oxide films: from Fe3O4 to γ-Fe2O3 and FeO". Journal of Materials Chemistry C 8, n. 4 (2020): 1335–43. http://dx.doi.org/10.1039/c9tc05921k.
Hardy, An, Sven Van Elshocht, Jan D’Haen, Olivier Douhéret, Stefan De Gendt, Christoph Adelmann, Matty Caymax et al. "Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films". Journal of Materials Research 22, n. 12 (dicembre 2007): 3484–93. http://dx.doi.org/10.1557/jmr.2007.0433.
Liao, Zhaoliang, e Jiandi Zhang. "Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures". Applied Sciences 9, n. 1 (3 gennaio 2019): 144. http://dx.doi.org/10.3390/app9010144.
Chen, Zongkun, Minghua Huang e Helmut Cölfen. "Synthesis of ultrathin metal oxide and hydroxide nanosheets using formamide in water at room temperature". CrystEngComm 23, n. 21 (2021): 3794–801. http://dx.doi.org/10.1039/d1ce00277e.
Fukuda, Masatoshi, Wataru Mizubayashi, Atsushi Kohno, Seiichi Miyazaki e Masataka Hirose. "Analysis of Tunnel Current through Ultrathin Gate Oxides". Japanese Journal of Applied Physics 37, Part 2, No. 12B (15 dicembre 1998): L1534—L1536. http://dx.doi.org/10.1143/jjap.37.l1534.
Chen, C. C., C. Y. Chang, C. H. Chien, T. Y. Huang, H. C. Lin e M. S. Liang. "Temperature-accelerated dielectric breakdown in ultrathin gate oxides". Applied Physics Letters 74, n. 24 (14 giugno 1999): 3708–10. http://dx.doi.org/10.1063/1.123228.
Hori, Takashi, Hiroshi Iwasaki, Takuichi Ohmura, Atsuko Samizo, Minoru Sato e Yoshiaki Yoshioka. "Compositional study of ultrathin rapidly reoxidized nitrided oxides". Journal of Applied Physics 65, n. 2 (15 gennaio 1989): 629–35. http://dx.doi.org/10.1063/1.343095.
Hattori, Takeo, Hiroshi Nohira e Kensuke Takahashi. "The initial growth steps of ultrathin gate oxides". Microelectronic Engineering 48, n. 1-4 (settembre 1999): 17–24. http://dx.doi.org/10.1016/s0167-9317(99)00329-9.
Contaret, T., G. Ghibaudo, A. Ferron e F. Bœuf. "Excess drain noise simulation in ultrathin oxides MOSFETs". Journal of Computational Electronics 5, n. 2-3 (luglio 2006): 187–92. http://dx.doi.org/10.1007/s10825-006-8842-1.
Zander, D., F. Saigne, C. Petit e A. Meinertzhagen. "Electrical stress effects on ultrathin (2.3 nm) oxides". Journal of Non-Crystalline Solids 280, n. 1-3 (febbraio 2001): 86–91. http://dx.doi.org/10.1016/s0022-3093(00)00393-8.
Chang, Chun-Yen, Chi-Chun Chen, Horng-Chih Lin, Mong-Song Liang, Chao-Hsin Chien e Tiao-Yuan Huang. "Reliability of ultrathin gate oxides for ULSI devices". Microelectronics Reliability 39, n. 5 (maggio 1999): 553–66. http://dx.doi.org/10.1016/s0026-2714(99)00037-2.
Giustino, Feliciano, e Alfredo Pasquarello. "Infrared properties of ultrathin oxides on Si(100)". Microelectronic Engineering 80 (giugno 2005): 420–23. http://dx.doi.org/10.1016/j.mee.2005.04.025.
Zhang, Xinyu, Yongwei Wang, Fenghua Cheng, Zhiping Zheng e Yaping Du. "Ultrathin lanthanide oxides nanomaterials: synthesis, properties and applications". Science Bulletin 61, n. 18 (settembre 2016): 1422–34. http://dx.doi.org/10.1007/s11434-016-1155-2.
Vereecke, G., E. Röhr, R. J. Carter, T. Conard, H. De Witte e M. M. Heyns. "Investigation of fluorine in dry ultrathin silicon oxides". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, n. 6 (2001): 2108. http://dx.doi.org/10.1116/1.1414050.
Cellere, G., L. Larcher, M. G. Valentini e A. Paccagnella. "Micro breakdown in small-area ultrathin gate oxides". IEEE Transactions on Electron Devices 49, n. 8 (agosto 2002): 1367–74. http://dx.doi.org/10.1109/ted.2002.801443.
Lundgren, P., M. O. Andersson, K. R. Farmer e O. Engström. "Electrical instability of ultrathin thermal oxides on silicon". Microelectronic Engineering 28, n. 1-4 (giugno 1995): 67–70. http://dx.doi.org/10.1016/0167-9317(95)00017-3.
Wu, E. Y., D. L. Harmon e Liang-Kai Han. "Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides". IEEE Electron Device Letters 21, n. 7 (luglio 2000): 362–64. http://dx.doi.org/10.1109/55.847381.
Chen, Ming-Jer, Ting-Kuo Kang, Chuan-Hsi Liu, Yih J. Chang e Kuan-Yu Fu. "Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides". Applied Physics Letters 77, n. 4 (24 luglio 2000): 555–57. http://dx.doi.org/10.1063/1.127042.
Bruyère, S., F. Guyader, W. De Coster, E. Vincent, M. Saadeddine, N. Revil e G. Ghibaudo. "Wet or dry ultrathin oxides: impact on gate oxide and device reliability". Microelectronics Reliability 40, n. 4-5 (aprile 2000): 691–95. http://dx.doi.org/10.1016/s0026-2714(99)00273-5.
Lin, M.-T., R. J. Jaccodine e T. J. Delph. "Planar oxidation of strained silicon substrates". Journal of Materials Research 16, n. 3 (marzo 2001): 728–33. http://dx.doi.org/10.1557/jmr.2001.0112.
von Bardeleben, Hans Jürgen, J. L. Cantin, I. Vickridge, Yong Wei Song, S. Dhar, Leonard C. Feldman, John R. Williams et al. "Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC". Materials Science Forum 483-485 (maggio 2005): 277–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.277.
SUÑE, JORDI, DAVID JIMENEZ e ENRIQUE MIRANDA. "BREAKDOWN MODES AND BREAKDOWN STATISTICS OF ULTRATHIN SiO2 GATE OXIDES". International Journal of High Speed Electronics and Systems 11, n. 03 (settembre 2001): 789–848. http://dx.doi.org/10.1142/s0129156401001003.
Gao, Xinlong, Wenhui Shi, Pengchao Ruan, Jinxiu Feng, Dong Zheng, Linhai Yu, Min Xue et al. "Ultrathin carbon boosted sodium storage performance in aqueous electrolyte". Functional Materials Letters 13, n. 05 (luglio 2020): 2030002. http://dx.doi.org/10.1142/s1793604720300029.
Istomin, A. V., e S. G. Kolyshev. "ELECTROSTATIC METHOD OF FORMING ULTRATHIN FIBERS OF REFRACTORY OXIDES". «Aviation Materials and Technologies», n. 2 (2019): 40–46. http://dx.doi.org/10.18577/2071-9140-2019-0-2-40-46.
Vereecke, Guy, Erika Röhr, R. J. Carter, Thierry Conard, H. De Witte e Marc M. Heyns. "The Origins of Fluorine in Dry Ultrathin Silicon Oxides". Solid State Phenomena 76-77 (gennaio 2001): 153–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.153.
Arienzo, Maurizio, Leonello Dori e Thomas N. Szabo. "Effect of post‐oxidation anneal on ultrathin SiO2gate oxides". Applied Physics Letters 49, n. 16 (20 ottobre 1986): 1040–42. http://dx.doi.org/10.1063/1.97465.
Oellig, Eva M., E. G. Michel, M. C. Asensio e R. Miranda. "Ultrathin gate oxides formed by catalytic oxidation of silicon". Applied Physics Letters 50, n. 23 (8 giugno 1987): 1660–62. http://dx.doi.org/10.1063/1.97760.
Liao, Wei-Jian, Yi-Lin Yang, Shun-Cheng Chuang e Jenn-Gwo Hwu. "Growth-Then-Anodization Technique for Reliable Ultrathin Gate Oxides". Journal of The Electrochemical Society 151, n. 9 (2004): G549. http://dx.doi.org/10.1149/1.1783907.
Fair, Richard B. "Physical Models of Boron Diffusion in Ultrathin Gate Oxides". Journal of The Electrochemical Society 144, n. 2 (1 febbraio 1997): 708–17. http://dx.doi.org/10.1149/1.1837473.
Thompson, W. Howard, Zain Yamani, Laila AbuHassan, Osman Gurdal e Munir Nayfeh. "The effect of ultrathin oxides on luminescent silicon nanocrystallites". Applied Physics Letters 73, n. 6 (10 agosto 1998): 841–43. http://dx.doi.org/10.1063/1.122019.
Madsen, Jon M., Zhenjiang Cui e Christos G. Takoudis. "Low temperature oxidation of SiGe in ozone: Ultrathin oxides". Journal of Applied Physics 87, n. 4 (15 febbraio 2000): 2046–51. http://dx.doi.org/10.1063/1.372134.
Mukhopadhyay, M., S. K. Ray, D. K. Nayak e C. K. Maiti. "Ultrathin oxides using N2O on strained Si1−xGex layers". Applied Physics Letters 68, n. 9 (26 febbraio 1996): 1262–64. http://dx.doi.org/10.1063/1.115946.
Pennetta, C., L. Reggiani e Gy Trefán. "A percolative model of soft breakdown in ultrathin oxides". Physica B: Condensed Matter 314, n. 1-4 (marzo 2002): 400–403. http://dx.doi.org/10.1016/s0921-4526(01)01408-9.
Beck, Romuald B. "Formation of ultrathin silicon oxides—modeling and technological constraints". Materials Science in Semiconductor Processing 6, n. 1-3 (febbraio 2003): 49–57. http://dx.doi.org/10.1016/s1369-8001(03)00071-4.