Articoli di riviste sul tema "Transistors HEMT"
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Amar, Abdelhamid, Bouchaïb Radi e Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)". Applied Sciences 11, n. 22 (13 novembre 2021): 10720. http://dx.doi.org/10.3390/app112210720.
Testo completoMrvić, Jovan, e Vladimir Vukić. "Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors". Zbornik radova Elektrotehnicki institut Nikola Tesla 30, n. 30 (2020): 93–109. http://dx.doi.org/10.5937/zeint30-29318.
Testo completoKuliev, M. V. "Influence of the Heterostructure Composition on the Long-Term Stability of a Microwave Oscillator". Nano- i Mikrosistemnaya Tehnika 24, n. 1 (22 febbraio 2022): 27–29. http://dx.doi.org/10.17587/nmst.24.27-29.
Testo completoZhelannov, Andrei V., Boris I. Seleznev e Dmitry G. Fedorov. "Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure". Nano Hybrids and Composites 28 (febbraio 2020): 149–54. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.149.
Testo completoСоловьев, А. А. "МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF". NANOINDUSTRY Russia 96, n. 3s (15 giugno 2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.
Testo completoSleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny e Ilya A. Zhilnikov. "Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD". Modern Electronic Materials 6, n. 2 (15 luglio 2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.
Testo completoSalmanogli, Ahmad. "Squeezed state generation using cryogenic InP HEMT nonlinearity". Journal of Semiconductors 44, n. 5 (1 maggio 2023): 052901. http://dx.doi.org/10.1088/1674-4926/44/5/052901.
Testo completoRyndin, Eugeny A., Amgad A. Al-Saman e Boris G. Konoplev. "A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics". Active and Passive Electronic Components 2019 (1 aprile 2019): 1–9. http://dx.doi.org/10.1155/2019/5135637.
Testo completoSARKOZY, S., X. MEI, W. YOSHIDA, P. H. LIU, M. LANGE, J. LEE, Z. ZHOU et al. "AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS". International Journal of High Speed Electronics and Systems 20, n. 03 (settembre 2011): 399–404. http://dx.doi.org/10.1142/s0129156411006684.
Testo completoLi, Zijian. "Advancements in GaN HEMT structures and applications: A comprehensive overview". Journal of Physics: Conference Series 2786, n. 1 (1 giugno 2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.
Testo completoElwaradi, Reda, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub e Yvon Cordier. "Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate". Journal of Applied Physics 133, n. 14 (14 aprile 2023): 145705. http://dx.doi.org/10.1063/5.0147048.
Testo completoWojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts". Micromachines 9, n. 11 (25 ottobre 2018): 546. http://dx.doi.org/10.3390/mi9110546.
Testo completoPavlov, A. Yu, K. N. Tomosh, V. Yu Pavlov, D. N. Slapovskiy, A. V. Klekovkin e I. A. Ivchenko. "Electron Mobility Transistors On AlGaN/GaN Heterostructure with Recess in the Barrier Layer". Nano- i Mikrosistemnaya Tehnika 24, n. 2 (21 febbraio 2022): 103–8. http://dx.doi.org/10.17587/nmst.24.103-108.
Testo completoSong, Yu-Lin, Manoj Kumar Reddy, Luh-Maan Chang e Gene Sheu. "Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps". Micromachines 12, n. 7 (26 giugno 2021): 751. http://dx.doi.org/10.3390/mi12070751.
Testo completoHasan, Md Sakib, Samira Shamsir, Mst Shamim Ara Shawkat, Frances Garcia e Syed K. Islam. "Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET)". International Journal of High Speed Electronics and Systems 27, n. 03n04 (settembre 2018): 1840016. http://dx.doi.org/10.1142/s0129156418400165.
Testo completoĐorđević, Vladica, Zlatica Marinković e Olivera Pronić-Rančić. "COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS". Facta Universitatis, Series: Automatic Control and Robotics 16, n. 2 (24 ottobre 2017): 117. http://dx.doi.org/10.22190/fuacr1702119d.
Testo completoMusznicki, Piotr, Pawel B. Derkacz e Piotr J. Chrzan. "Wideband Modeling of DC-DC Buck Converter with GaN Transistors". Energies 14, n. 15 (22 luglio 2021): 4430. http://dx.doi.org/10.3390/en14154430.
Testo completoArseniuk, Dmytro, e Yuri Zinkovskyi. "MINIMIZING HIGH-FREQUENCY SWITCHING LOSSES IN WIDEBAND GAN HEMTS FOR FLYBACK CONVERTERS". Information and Telecommunication Sciences, n. 2 (21 dicembre 2023): 53–60. http://dx.doi.org/10.20535/2411-2976.22023.53-60.
Testo completoGryglewski, Daniel, Wojciech Wojtasiak, Eliana Kamińska e Anna Piotrowska. "Characterization of Self-Heating Process in GaN-Based HEMTs". Electronics 9, n. 8 (13 agosto 2020): 1305. http://dx.doi.org/10.3390/electronics9081305.
Testo completoTorina, Elena M., Victor N. Kochemasov e Ansar R. Safin. "Transistors for Solid-State Microwave Switches (A Review)". Journal of the Russian Universities. Radioelectronics 26, n. 3 (6 luglio 2023): 6–31. http://dx.doi.org/10.32603/1993-8985-2023-26-3-6-31.
Testo completoLi, Fan, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen e Wen Liu. "Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics". Applied Sciences 11, n. 24 (17 dicembre 2021): 12057. http://dx.doi.org/10.3390/app112412057.
Testo completoBouneb, I., e F. Kerrour. "Nanometric Modelisation to Characterize Dynamics Carriers in a HEMT Heterostructure (AlGaAs/GaAs) Using an Effectif Doping". Key Engineering Materials 644 (maggio 2015): 26–30. http://dx.doi.org/10.4028/www.scientific.net/kem.644.26.
Testo completoLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma e Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade". Applied Physics Letters 120, n. 17 (25 aprile 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Testo completoLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma e Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade". Applied Physics Letters 120, n. 17 (25 aprile 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Testo completoAbolduev, I. M., N. V. Alkeev, V. S. Belyaev, E. V. Kaevitser e I. D. Kashlakov. "CURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS". Electronic engineering Series 2 Semiconductor devices 259, n. 4 (2020): 12–18. http://dx.doi.org/10.36845/2073-8250-2020-259-4-12-18.
Testo completoJardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers". International Journal of Microwave and Wireless Technologies 6, n. 6 (25 febbraio 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.
Testo completoJang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim e Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study". Micromachines 11, n. 1 (31 dicembre 2019): 53. http://dx.doi.org/10.3390/mi11010053.
Testo completoGramatikov, Pavlin. "GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION". Journal Scientific and Applied Research 15, n. 1 (3 marzo 2019): 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.
Testo completoQin, Zhen-Wei, Wen-Hsuan Tsai, Wei-Chia Chen, Hao-Hsuan Lo e Yue-Ming Hsin. "I–V Characteristics of E-mode GaN-based transistors under gate floating". Semiconductor Science and Technology 37, n. 4 (14 febbraio 2022): 045002. http://dx.doi.org/10.1088/1361-6641/ac5105.
Testo completoWang, Jinye, Jun Liu e Zhenxin Zhao. "A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate". Journal of Semiconductors 45, n. 5 (1 maggio 2024): 052302. http://dx.doi.org/10.1088/1674-4926/45/5/052302.
Testo completoWang, Chih Hao, Liang Yu Su, Finella Lee e Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices". Applied Mechanics and Materials 764-765 (maggio 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.
Testo completoMaset, Enrique, Juan Bta Ejea, Agustín Ferreres, José Luis Lizán, Jose Manuel Blanes, Esteban Sanchis-Kilders e Ausias Garrigós. "Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications". Energies 13, n. 24 (14 dicembre 2020): 6583. http://dx.doi.org/10.3390/en13246583.
Testo completoНедошивина, А. Д., И. В. Макарцев e С. В. Оболенский. "Модель для многопараметрического анализа параметров короткоканальных транзисторов типа НЕМТ". Физика и техника полупроводников 56, n. 7 (2022): 618. http://dx.doi.org/10.21883/ftp.2022.07.52747.02.
Testo completoМихайлович, С. В., А. Ю. Павлов, К. Н. Томош e Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, n. 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.
Testo completoYan, Dong, Lijun Hang, Yuanbin He, Zhen He e Pingliang Zeng. "An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters". Energies 15, n. 8 (18 aprile 2022): 2966. http://dx.doi.org/10.3390/en15082966.
Testo completoKlochkov, A. N. "InP HEMT Transistors and Monolithic Integrated Circuits: Review". Nano- i Mikrosistemnaya Tehnika 22, n. 2 (24 febbraio 2020): 79–97. http://dx.doi.org/10.17587/nmst.22.79-97.
Testo completoWang, Ding, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma e Zetian Mi. "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT". Applied Physics Letters 122, n. 9 (27 febbraio 2023): 090601. http://dx.doi.org/10.1063/5.0143645.
Testo completoAmar, Abdelhamid, Bouchaïb Radi e Abdelkhalak El Hami. "Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)". International Journal for Simulation and Multidisciplinary Design Optimization 13 (2022): 2. http://dx.doi.org/10.1051/smdo/2021035.
Testo completoБеляков, В. А., И. В. Макарцев, А. Г. Фефелов, С. В. Оболенский, А. П. Васильев, А. Г. Кузьменков, М. М. Кулагина e Н. А. Малеев. "Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP". Физика и техника полупроводников 55, n. 10 (2021): 890. http://dx.doi.org/10.21883/ftp.2021.10.51439.38.
Testo completoCho, Seong-Kun, e Won-Ju Cho. "High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor". Chemosensors 9, n. 3 (25 febbraio 2021): 42. http://dx.doi.org/10.3390/chemosensors9030042.
Testo completoYang, Jie, Ye Ting Jia, Ning Ye, Zhen Yu Yuan, Hong Yuan Shen e Jia Di. "An Improved I-V Model of GaN HEMT for High Temperature Applications". Materials Science Forum 924 (giugno 2018): 980–83. http://dx.doi.org/10.4028/www.scientific.net/msf.924.980.
Testo completoWang, Baochao, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye e Xuezhen Ding. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs". Energies 12, n. 6 (25 marzo 2019): 1146. http://dx.doi.org/10.3390/en12061146.
Testo completoWeis, Gerald. "Performance Comparison Between Surface-mount and Embedded Power Modules". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (1 gennaio 2019): 000647–70. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp3_052.
Testo completoSun, Haifeng, Diego Marti, Stefano Tirelli, Andreas R. Alt, Hansruedi Benedickter e C. R. Bolognesi. "Millimeter-wave GaN-based HEMT development at ETH-Zürich". International Journal of Microwave and Wireless Technologies 2, n. 1 (febbraio 2010): 33–38. http://dx.doi.org/10.1017/s1759078710000164.
Testo completoSANO, EIICHI, e TAIICHI OTSUJI. "HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA". International Journal of High Speed Electronics and Systems 17, n. 03 (settembre 2007): 509–20. http://dx.doi.org/10.1142/s0129156407004709.
Testo completoMaati, Wafa, e Abdelkader Hamdoune. "Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor". Sensor Letters 18, n. 5 (1 maggio 2020): 366–70. http://dx.doi.org/10.1166/sl.2020.4226.
Testo completoFatma M. Mahmoud. "GaN-HEMT Performance Enhancement". Journal of Electrical Systems 20, n. 2 (4 aprile 2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.
Testo completoTsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang e Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures". Science of Advanced Materials 13, n. 2 (1 febbraio 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.
Testo completoDai, Pengfei, Shaowei Wang e Hongliang Lu. "Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors". Micromachines 15, n. 3 (25 febbraio 2024): 321. http://dx.doi.org/10.3390/mi15030321.
Testo completoGuan, Wuxiao. "Advancements and trends in GaN HEMT". Applied and Computational Engineering 23, n. 1 (7 novembre 2023): 245–51. http://dx.doi.org/10.54254/2755-2721/23/20230662.
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