Bibliografie tematiche / Terahertz electronics

Letteratura scientifica selezionata sul tema "Terahertz electronics"

Autore: Grafiati

Pubblicato: 22 giugno 2024

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Articoli di riviste sul tema "Terahertz electronics":

O, Kenneth. "Affordable terahertz electronics". IEEE Microwave Magazine 10, n. 3 (maggio 2009): 113–16. http://dx.doi.org/10.1109/mmm.2009.932070.

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Shur, Michael. "Terahertz Sensing Technology". International Journal of High Speed Electronics and Systems 24, n. 01n02 (marzo 2015): 1550001. http://dx.doi.org/10.1142/s0129156415500019.

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Sensing applications of THz technology include applications for space exploration, detection of concealed objects, explosive identification, and THz cancer detection. This paper will review these and other emerging applications and existing and potential THz sources and detectors, including photonic and electronic THz devices, such as plasmonic field effect transistors capable of detecting and emitting THz radiation. Plasma wave electronics devices demonstrated THz detection using GaAs-based and GaN-based HEMTs, Si MOS, SOI, and FINFETs and FET arrays. This technology has potential to become a dominant THz electronics technology.

Song, Ho-Jin. "Packages for Terahertz Electronics". Proceedings of the IEEE 105, n. 6 (giugno 2017): 1121–38. http://dx.doi.org/10.1109/jproc.2016.2633547.

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Shur, M. "Plasma wave terahertz electronics". Electronics Letters 46, n. 26 (2010): S18. http://dx.doi.org/10.1049/el.2010.8457.

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Shur, Michael S., e Victor Ryzhii. "Plasma Wave Electronics". International Journal of High Speed Electronics and Systems 13, n. 02 (giugno 2003): 575–600. http://dx.doi.org/10.1142/s0129156403001831.

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Plasma waves are oscillations of electron density in time and space. In deep submicron field effect transistors plasma wave frequencies lie in the terahertz range and can be tuned by applied gate bias. Since the plasma wave frequency is much larger that the inverse electron transit time in the device, it is easier to reach "ballistic" regimes for plasma waves than for electrons moving with drift velocities. In the ballistic regime, no collisions of electrons with impurities or lattice vibrations occur on a time scale on the order of the plasma oscillation period, and the device channel acts as a resonant cavity for the plasma waves, making possible tunable resonant detection or even emission of the electromagnetic radiation in the terahertz range. We review the theory of plasma waves in field effect transistors; discuss instabilities of these waves in different device structures and their applications for detection and generation of the terahertz radiation.

Huang, Yi Hu, Man Hu, Gui Hua He e Wen Long Liu. "Terahertz Time-Domain Spectroscopy Technology and its Application in the Field of Pesticide". Key Engineering Materials 561 (luglio 2013): 640–45. http://dx.doi.org/10.4028/www.scientific.net/kem.561.640.

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Terahertz wave lies between far-infrared and microwave in electromagnetic spectrum with frequency form 0.1 THz to10 THz. Terahertz is believed to be the master technology of electronics and information science, and to be the bridge between micro electronics and macro wavelength. THz has formed a worldwide research climax. This paper introduces the main characters of Terahertz wave, Terahertz time-domain spectroscopy technology and its application researches, especially detailed the researches in pesticide spectra.

Tamošiūnas, V. "New trends in terahertz electronics". Lithuanian Journal of Physics 46, n. 2 (2006): 131–45. http://dx.doi.org/10.3952/lithjphys.46217.

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Naftaly, Mira, Satyajit Das, John Gallop, Kewen Pan, Feras Alkhalil, Darshana Kariyapperuma, Sophie Constant, Catherine Ramsdale e Ling Hao. "Sheet Resistance Measurements of Conductive Thin Films: A Comparison of Techniques". Electronics 10, n. 8 (17 aprile 2021): 960. http://dx.doi.org/10.3390/electronics10080960.

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Conductive thin films are an essential component of many electronic devices. Measuring their conductivity accurately is necessary for quality control and process monitoring. We compare conductivity measurements on films for flexible electronics using three different techniques: four-point probe, microwave resonator and terahertz time-domain spectroscopy. Multiple samples were examined, facilitating the comparison of the three techniques. Sheet resistance values at DC, microwave and terahertz frequencies were obtained and were found to be in close agreement.

GONG, Yubin, Qing ZHOU, Hanwen TIAN, Jingchao TANG, Kaicheng WANG, Yaxin ZHANG, Bo ZHANG e Diwei LIU. "Terahertz radiation sources based on electronics". Journal of Shenzhen University Science and Engineering 36, n. 2 (2019): 111. http://dx.doi.org/10.3724/sp.j.1249.2019.02111.

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Li, Min, Zheng Liu, Yu Xia, Mingyang He, Kangwen Yang, Shuai Yuan, Ming Yan, Kun Huang e Heping Zeng. "Terahertz Time-of-Flight Ranging with Adaptive Clock Asynchronous Optical Sampling". Sensors 23, n. 2 (8 gennaio 2023): 715. http://dx.doi.org/10.3390/s23020715.

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We propose and implement a terahertz time-of-flight ranging system based on adaptive clock asynchronous optical sampling, where the timing jitter is corrected in real time to recover the depth information in the acquired interferograms after compensating for laser instabilities using electronic signal processing. Consequently, the involved measurement uncertainties caused by the timing jitter during the terahertz sampling process and the noise intensity of the terahertz electric field have been reduced by the utilization of the adaptive clock. The achieved uncertainty range is about 2.5 μm at a 5 cm distance after averaging the acquisition time of 1876 ms 5000 times, showing a significant improvement compared with the asynchronous optical sampling using a constant clock. The implemented terahertz ranging system only uses free-running mode-locked lasers without any phase-locked electronics, and this favors simple and robust operations for subsequent applications that extend beyond the laboratory conditions.

Più fonti

Tesi sul tema "Terahertz electronics":

Lucyszyn, Stepan. "Millimetre-wave and terahertz electronics". Thesis, Imperial College London, 2009. http://hdl.handle.net/10044/1/6974.

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Overview: The basic thesis for the advancement of millimetre-wave and terahertz electronics is represented in four sections: Signal Processing, Component Design and Realization, Modelling and Materials, and Paradigm Shift. The first section is at system and circuit levels and reports on complex signal process functions that have been performed directly on the millimetre-wave carrier signal, intended for realizing low-cost and adaptive communications and radar systems architectures. The second section is at circuit and component levels and reports on techniques for the design and realization of low-loss passives for use at millimetrewave frequencies. The third section is at component and material levels and reports on modelling techniques for passives for use at both millimetre-wave and terahertz frequencies. Finally, the fourth section introduces a revolutionary new technology that represents a paradigm shift in the way millimetre-wave and terahertz electronics (i.e. components, circuits and systems) can be implemented. As found with the new generation of mobile phone handsets, a fusion of two extreme technologies can take place; here, complex signal processing operations could be performed both directly on the carrier signal and with the use of a spatial light modulator. Based on a selection of 20 papers (co-)authored by the candidate †b, and published over a period of 15 years, it will be seen that a coherent theme runs throughout this body of work, for the advancement of knowledge in millimetre-wave and terahertz electronics.

Othman, Mohd Azlishah. "Sub-Terahertz : generation and detection". Thesis, University of Nottingham, 2013. http://eprints.nottingham.ac.uk/13375/.

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Nowadays, there has been an increasing interest in Terahertz (THz) radiation for application across scientific disciplines including atmospheric sensing, medical diagnosis, security screening and explosive detection. The limitation of THz generators and detectors has gained interest from scientists and engineers to explore the development of both sources and detectors. With the advantages of low cost, low power consumption, high reliability and potential for large-scale integration, sub-THz generator and detector can be developed using CMOS process technology. In this thesis, an IMPATT diode acts as a sub-THz generator, HEMTs and MOSFETs act as sub-THz detectors, which are developed in AMS 0.35 μm CMOS technology and UMC, 0.18 μm CMOS technology. The size of the IMPATT diode was 120 μm x 50 μm with the target resonant frequency at 30 GHz. The experiment results show that the operating frequency of the IMPATT diode was between 12 GHz up to 14 GHz. Then by using HEMTs with 0.2 μm gate length and 200 μm gate widths, sub-THz radiation detection has been demonstrated. Experimental results show that the photoresponse depends on the drain current and the gate to source voltage VGS. In addition, photoresponse also depends on varying frequencies up to 220 GHz and fixed the drain current. Furthermore, the HEMT also give an indication of response by varying the input power of microwave extender. MOSFETs from two types of CMOS technology; AMS 0.35μm and UMC 0.18 μm technology with different gate length ranging from 180 nm up 350 nm were demonstrated. These results provide evidence that the photoresponse increases with the drain current and the RF input power, but inversely to the frequencies. These results also provide evidence that the MOSFETs are able to work as low cost and sensitive sub-THz detector.

Shen, Hao. "Compressed sensing on terahertz imaging". Thesis, University of Liverpool, 2012. http://livrepository.liverpool.ac.uk/8457/.

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Most terahertz (THz) time-domain (pulsed) imaging experiments that have been performed by raster scanning the object relative to a focused THz beam require minutes or even hours to acquire a complete image. This slow image acquisition is a major limiting factor for real-time applications. Other systems using focal plane detector arrays can acquire images in real-time, but they are too expensive or are limited by low sensitivity in the THz range. More importantly, such systems cannot provide spectroscopic information of the sample. To develop faster and more efficient THz time-domain (pulsed) imaging systems, this research used random projection approach to reconstruct THz images from the synthetic and real-world THz data based on the concept of compressed/compressive sensing/sampling (CS). Compared with conventional THz time-domain (pulsed) imaging, no raster scanning of the object is required. The simulation results demonstrated that CS has great potential for real-time THz imaging systems because its use can dramatically reduce the number of measurements in such systems. We then implemented two different CS-THz systems based on the random projection method. One is a compressive THz time-domain (pulsed) spectroscopic imaging system using a set of independent optimized masks. A single-point THz detector, together with a set of 40 optimized two-dimensional binary masks, was used to measure the THz waveforms transmitted through a sample. THz time- and frequency-domain images of the sample comprising 20×20 pixels were subsequently reconstructed. This demonstrated that both the spatial distribution and the spectral characteristics of a sample can be obtained by this means. Compared with conventional THz time-domain (pulsed) imaging, ten times fewer THz spectra need to be taken. In order to further speed up the image acquisition and reconstruction process, another hardware implementation - a single rotating mask (i.e., the spinning disk) with random binary patterns - was utilized to spatially modulate a collimated THz. After propagating through the sample, the THz beam was measured using a single detector, and a THz image was subsequently reconstructed using the CS approach. This demonstrated that a 32×32 pixel image could be obtained from 160 to 240 measurements. This spinning disk configuration allows the use of an electric motor to rotate the spinning disk, thus enabling the experiment to be performed automatically and continuously. To the best of our knowledge, this is the first experimental implementation of a spinning disk configuration for high speed compressive image acquisition. A three-dimensional (3D) joint reconstruction approach was developed to reconstruct THz images from random/incomplete subsets of THz data. Such a random sampling method provides a fast THz imaging acquisition and also simplifies the current THz imaging hardware implementation. The core idea is extended in image inpainting to the case of 3D data. Our main objective is to exploit both spatial and spectral/temporal information for recovering the missing samples. It has been shown that this approach has superiority over the case where the spectral/temporal images are treated independently. We first proposed to learn a spatio-spectral/temporal dictionary from a subset of available training data. Using this dictionary, the THz images can then be jointly recovered from an incomplete set of observations. The simulation results using the measured THz image data confirm that this 3D joint reconstruction approach also provides a significant improvement over the existing THz imaging methods.

Glynn, David William. "Terahertz frequency doubling circuits for communications". Thesis, University of Birmingham, 2017. http://etheses.bham.ac.uk//id/eprint/7517/.

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Exploitation of the terahertz frequency region offers tantalising rewards over other parts of the congested spectrum, however current technologies and manufacturing methods are not yet commercially effective to capitalise on its riches. This thesis is concerned with developing new techniques to enable and improve radio frequency engineering design for tomorrow’s terahertz applications. The techniques in this thesis will provide engineer’s the knowledge to creatively tackle some of the challenges when designing at the terahertz scale. A novel design of a 9 to 18 GHz microstrip diode frequency doubler using the coupling matrix method is presented, which demonstrates new techniques for matching and integration of the circuit components. It illustrates a new approach for diode doubler design and provides a guide for solving the matching and integrating of passive circuits, such as input and output filters, to the active part of a circuit. Complex circuit interactions are controlled in the design, without the traditional reliance on circuit optimisation. Terahertz manufacturing technologies are investigated, and a 150 GHz E field plane terahertz waveguide using a polymer (SU-8) etching, layering and metal coating technology, is designed, constructed and measured. Such a device would be a fundamental component in a future terahertz frequency communication system.

Salmans, Parker Dean. "Semiconductor Terahertz Electronics and Novel High-Speed Single-Shot Measurements". BYU ScholarsArchive, 2017. https://scholarsarchive.byu.edu/etd/6544.

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Ultrafast spectroscopy is used to study essential characteristics of solid-state materials. We use ultrafast techniques to study semiconductors at THz frequencies, as well as demonstrate new single-shot measurement techniques. The future of electronics is in the THz regime. We study a crucial characteristic of semiconductors used in devices: the critical field at which the material becomes conductive. GaAs is a promising semiconductor for high-speed devices, and we use enhanced THz electric fields to measure the critical fields at 0.7, 0.9, 1.1, and 1.5 THz frequencies. Single-shot spectroscopy is a technique used to measure ultrafast time scale laser pulses. We show that a new, optical-fiber-based single-shot technique can map out the electric field of THz pulses. Also, we show two variants on this single-shot theme that can be used to measure ultrafast signals. We compare a classic pump-probe measurement to two types of single-shot measurements that use either a spectrometer or a 3 km fiber optic cable and oscilloscope, and we discuss important considerations to recovering the sample response.

Escorcia, Carranza Ivonne. "Metamaterial based CMOS terahertz focal plane array". Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6955/.

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The distinctive properties of terahertz radiation have driven an increase in interest to develop applications in the imaging field. The non-ionising radiation properties and transparency to common non-conductive materials have led research into developing a number of important applications including security screening, medical imaging, explosive detection and wireless communications. The proliferation of these applications into everyday life has been hindered by the lack of inexpensive, compact and room-temperature terahertz sources and detectors. These issues are addressed in this work by developing an innovative, uncooled, compact, scalable and low-cost terahertz detector able to target single frequency imaging applications such as stand-off imaging and non-invasive package inspection. The development of two types of metamaterial (MM) based terahertz focal plane arrays (FPAs) monolithically integrated in a standard complementary metal-oxide semiconductor (CMOS) technology are presented in this Thesis. The room temperature FPAs are composed of periodic cross-shaped resonant MM absorbers, microbolometer sensors in every pixel and front-end readout electronics fabricated in a 180 nm six metal layer CMOS process from Texas Instruments (TI). The MM absorbers are used due to the lack of natural selective absorbing materials of terahertz radiation. These subwavelength structures are made directly in the metallic and insulating layers available in the CMOS foundry process. When the MM structures are distributed in a periodic fashion, they behave as a frequency-selective material and are able to absorb at the required frequency. The electromagnetic (EM) properties are determined by the MM absorber geometry rather than their composition, thus being completely customisable for different frequencies. Single band and broadband absorbers were designed and implemented in the FPAs to absorb at 2.5 THz where a natural atmospheric transmission window is found, thus reducing the signal loss in the imaging system. The new approach of terahertz imaging presented in this Thesis is based in coupling a MM absorber with a suitable microbolometer sensor. The MM structure absorbs the terahertz wave while the microbolometer sensor detects the localised temperature change, depending on the magnitude of the radiation. Two widely used microbolometer sensors are investigated to compare the sensitivity of the detectors. The two materials are Vanadium Oxide (VOx) and p-n silicon diodes both of which are widely used in infrared (IR) imaging systems. The VOx microbolometers are patterned above the MM absorber and the p-n diode microbolometers are already present in the CMOS process. The design and fabrication of four prototypes of FPAs with VOx microbolometers demonstrate the scalability properties to create high resolution arrays. The first prototype consists of a 5 x 5 array with a pixel size of 30 μm x 30 μm. An 8 x 8 array, a 64 x 64 array with serial readout and a 64 x 64 array with parallel readout are also presented. Additionally, a 64 x 64 array with parallel output readout electronics with p-n diode microbolometers was fabricated. The design, simulation, characterisation and fabrication of single circuit blocks and a complete 64 x 64 readout integrated circuit is thoroughly discussed in this Thesis. The absorption characteristics of the MMs absorbers, single VOx and p-n diode pixels, 5 x 5 VOx FPA and a 64 x 64 array for both microbolometer types demonstrate the concept of CMOS integration of a monolithic MM based terahertz FPA. The imaging performance using both transmission and reflection mode is demonstrated by scanning a metallic object hidden in a manila envelope and using a single pixel of the array as a terahertz detector. This new approach to make a terahertz imager has the advantages of creating a high sensitivity room temperature technology that is capable of scaling and low-cost manufacture.

Khiabani, Neda. "Modelling, design and characterisation of terahertz photoconductive antennas". Thesis, University of Liverpool, 2013. http://livrepository.liverpool.ac.uk/14213/.

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The area of Terahertz (THz) is one of the fastest growing research fields in recent years. THz antennas based upon photoconduction techniques are the most common devices in THz systems. However, the radiated THz power from these devices and the efficiency are very low. Also, different antenna excitation and current generation process in THz antennas, as compared to microwave antennas, requires new analyses approaches. Therefore, the motivation of this thesis is to theoretically establish why the THz antenna is inefficient; from which, general methods to improve the performance of such antennas are explored and validated. These investigations are essential to gain a better understanding of THz photoconductive antenna performance. In this research a new equation for the source conductance of a THz antenna is firstly developed. This is a prerequisite for further antenna radiated power analysis. Next, a new equivalent circuit, modelling the underlying physical behaviour of the device through the use of a lumped-element network, is developed. Through this model, various factors which affect the radiated power and efficiency of the THz photoconductive antenna are examined and compared with measurement results. This model can be applied to maximize the optical-to-THz conversion efficiency. Also, temporal voltage behaviour of the antenna can be predicted more realistically. Furthermore, a computational simulation procedure, solving both optoelectronic and electromagnetic problems, is proposed and validated by measurement results. This approach facilitates prediction of THz photoconductive antenna performance before antenna fabrication. In addition, considering the requirement of high THz power and good SNR devices for various THz applications, a new top loaded THz antenna embedded on a conical horn with the trapezoidal photomixer is proposed. The generation of THz photocurrent, impedance matching and coupling of the THz wave to air (the necessary factors for power enhancement) are improved. Moreover, the new trapezoidal photomixer is examined and the measurement results show that it has better radiated THz power and SNR than the bare gap and rectangular photomixers.

Ledwosinska, Elzbieta. "Graphene as a mechanical or electrical transducer for far-infrared / terahertz detection". Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119378.

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We endeavour to fill the "THz gap" in highly performing detectors by employing graphene's mechanical properties in a miniature Golay cell, and hydrogenated graphene's electrical properties in a microbolometer. The Golay cell is the most sensitive room- temperature THz detector on the market, but requires miniaturization as the first step of integration into an imaging array. Currently, ultra-thin membranes for miniature Golay cells suffer diminishing responsivity as the lateral dimensions are reduced. We propose graphene as the ideal membrane material, whereby its minimal elastic stiffness due to its monoatomic nature allows scaling to the microscopic scale. We simulate membrane deflection versus temperature and analyze the optimal cell geometry for maximum performance, with a predicted three-fold increase in sensitivity over current technology four times larger. To fabricate the cell, we developed the first organic-free method to suspend graphene over 10 − 20 μm apertures. Auger electron and Raman spectroscopy, and scanning electron and transmission electron microscopy (TEM) confirm high quality graphene with no measurable contamination beyond that from air exposure. This method applies not only to construct the cell, but also for fundamental studies of graphene where the utmost cleanliness and structural integrity are crucial. Furthermore, our method finds commercial value as the long-sought graphene TEM grid. We present a theoretical analysis of interferometric optical read-out. We then implement atomic force microscopy to mechanically characterize and report the temperature-dependent deflection (up to 60◦C) of our cell, demonstrating a functioning proof-of-concept device. Finally, we examine and utilize the exquisite thermal properties of hydrogenated graphene to produce a microbolometer with responsivity of R ≈ 10^5 V/W, in fair competition with commercially available Si bolometers.
Nous tentons de remplir "le trou THz" pour les détecteurs hautes performance en utilisant les propriétés mécaniques du graphène dans une cellule miniature de Golay ainsi que les propriétés électriques du graphène hydrogéné dans un microbolomètre. La cellule de Golay est le détecteur le plus sensible de THz à température pièce sur le marché, mais requiert une miniaturisation comme première étape d'intégration à une grille d'imagerie. En ce moment, des membranes ultra minces pour des cellules de Golay miniatures souffrent de responsivité diminuée lorsque les dimensions latérales sont réduites. Nous proposons le graphène comme candidat idéal pour la membrane, car sa dureté élastique minimale grâce à sa nature monoatomique permet un agrandissement jusqu'à l'échelle microscopique. Nous simulons la déflection de la membrane en fonction de la température et analysons la géométrie de cellule optimale avec une sensibilité prédite de tripler par rapport à la technologie actuelle qui est quatre fois plus grande. Afin de fabriquer cette cellule, nous avons développé la première méthode de transfert de graphène suspendu sans organiques sur une échelle de 10 − 20 μm. La microscopie Raman, Auger, à balayage électronique et à transmission électronique (TEM) confirment du graphène de haute qualité sans aucune contamination à part celle de l'air ambiant. Cette méthode s'applique non seulement pour construire la cellule, mais aussi pour des études fondamentales du graphène ou la propreté est d'une importance capitale. Par ailleurs, nos méthodes culminent dans une application commerciale soit celle d'une grille TEM à base de graphène. Nous présentons une analyse théorique de lecture optique interférométrique. Nous implémentons ensuite de la microscopie par force atomique afin de caractériser mécaniquement et rapporter la déflection à température pièce (jusqu'à 60◦C) de notre cellule, démontrant ainsi la validation du concept. Finalement, nous examinons et utilisons les propritétés thermiques du graphène hydrogéné afin de produire un microbolomètre avec une responsivité de R ≈ 10^5 V/W, ce qui est comparable avec des bolomètres commerciaux à base de Si.

Barnes, Mark. "Terahertz emission from ultrafast lateral diffusion currents within semiconductor devices". Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/363127/.

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Single cycle THz emission from unbiased semiconductor devices after ultrafast carrier excitation can be attributed to surge currents on the surface of the device. These currents are due to either drift currents where carriers are accelerated by an internal electric field perpendicular to the surface (surface field effect) or diffusion currents where a separation of charge forms due to electrons and holes having different mobilities (photo-Dember effect). This surface emission is difficult to out couple from the semiconductor device as the emission is parallel to the surface of the semiconductor. This difficulty in out coupling led to a decline in interest for these types of emitters in preference to photoconductive emitters which today are the standard type of emitters used in THz time domain spectroscopy. In recent years a new type of surface emitter based on lateral diffusion currents (lateral Dember currents) has been proposed and demonstrated. This work acted as the initial inspiration for the work described within this thesis. The emission was attributed to net diffusion currents that formed from an initially asymmetrical carrier distribution that formed due to partially masking the pump spot with a metal mask. Simulations of the situation revealed that diffusion alone cannot account for the observed THz emission from these devices. From this I have extended the mechanism taking into account lateral diffusion currents and dipole suppression under a metal mask. Along with theoretical arguments experimental evidence is given that supports this new theory. These devices are further explored experimentally giving insights into the nature of the emission and how it depends on different pump parameters and external electric fields. Based on this new interpretation I present the design, fabrication, and testing of multiplex emitters that are are comparable with commercial photoconductive emitters in both power and band-width.

Smith, Shane Raymond. "Construction and characterization of a multi-antenna terahertz time-domain spectroscopy setup". Thesis, Stellenbosch : Stellenbosch University, 2015. http://hdl.handle.net/10019.1/96733.

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Thesis (MSc)--Stellenbosch University, 2015.
ENGLISH ABSTRACT: Recent progress in laser and semiconductor technology has allowed for far easier generation and measuring of coherent terahertz radiation, a previously difficult region in the radiation spectrum to coherently generate. Time based terahertz spectroscopy is a rather unique form of spectroscopy. Not only is it time based, but the electric field is measured instead of the intensity. This allows for the measurement of the complex refractive index. From this one can obtain certain details of the structure and environment of the sample being studied. A terahertz time-domain spectroscopy setup was constructed during this project. This setup used low temperature grown GaAs photoconductive antennae, with multiple antenna size options available for both the receiving and transmitting antennae. After the construction and alignment of this setup, the antennae were characterized. Lastly measurements were performed on the background, sugar and silicon to demonstrate the capabilities of the system. It was found that the measured terahertz electric field amplitude increased with the intensity of the pump pulse and that the amplitude of the measured terahertz electric field was dependent on the polarization of the pump pulse. As the size of the antenna was increased so too did the amplitude of the measured electric field and conversely the bandwidth of the measured terahertz electric field decreased with the increase of antenna size. This held true for both the transmitting and receiving antennae.
AFRIKAANSE OPSOMMING: Danksê onlangse tegnologiese onwikkelings in lasers en halfgeleier het dit veel makliker geraak om terahertz straling te genereer wat fase samehangendheid toon. Voor hierdie ontwikkelings was straling in hierdie spektrale gebied moeilik om te genereer op ’n wyse wat fase samehangendheid toon. Tyd verwante terahertz spektroskopie is taamlik uniek, aangesien die metings in tyd geneem word en die elektriese veld amplitude word pleks van die intensiteit gemeet. Een van die voordele van hierdie metode is dat dit toelaat vir die meeting van die komplekse brekingsindeks van monsters. Dit is moontlik om van die komplekse brekingsindeks strukturele en omgewings eienskappe van die monster af te lei. Gedurende die projek was ’n tyd verwante terahertz spektroskopie sisteem gebou wat gebaseer was op lae temperatuur gegroeide GaAs foto-geleidende antennas. Die sisteem bevat vier antennas van verskillende groottes aan beide die sender en ontvanger kant. Die antennas was gekarakteriseer na die bou en belyning van die terahertz sisteem en meetings was gedoen op die agtergrond, suiker en silikon om die sisteem se vermoë te demonstreer. Dit was gevind dat die amplitude van die gemete terahertz elektriese veld groter geraak het soos die intensiteit van die pomp puls verhoog was en dat die die amplitude van die gemete terahertz electriese veld afhanklik was van die polarisasie van die pomp puls. Die amplitude van van die gemete terahertz elektriese veld het gegroei met die grootte van die antenna, maar hoe groter die antenna geraak het, hoe kleiner was die bandwydte van die gemete terahertz elektriese veld. Hierdie was die geval vir beide die sender en ontvanger antennas.

Più fonti

Libri sul tema "Terahertz electronics":

Rieh, Jae-Sung. Introduction to Terahertz Electronics. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-51842-4.

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Kiyomi, Sakai, a cura di. Terahertz optoelectronics. Berlin: Springer, 2005.

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Maxim, Ryzhii, e Ryzhii Victor, a cura di. Physics and modeling of tera-and nano-devices. Singapore: World Scientific, 2008.

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NATO Advanced Research Workshop on New Directions in Terahertz Technology (1996 Castéra-Verduzan, France). New directions in terahertz technology. Dordrecht: Kluwer Academic Publishers, 1997.

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International, Conference on Terahertz Electronics (8th 2000 Darmstadt Germany). THz Conference 2000: 8th International Conference on Terahertz Electronics, 28-29 September 2000. Berlin: VDE-Verlag, 2000.

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1943-, Ulaby Fawwaz T., Kukkonen Carl A, United States. Office of Aeronautics and Space Technology. e Center for Space Microelectronics Technology (Jet Propulsion Laboratory), a cura di. Proceedings of the Third International Symposium on Space Terahertz Technology, March 24-26, 1992, University of Michigan, Ann Arbor, Michigan. [Washington, DC: National Aeronautics and Space Administration, 1992.

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Jennifer, Hwu R., e Society of Photo-optical Instrumentation Engineers., a cura di. Terahertz and gigahertz electronics and photonics III: 25-26 January 2004, San Jose, California, USA. Bellingham, Wash. USA: SPIE, 2004.

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P, Sadwick Laurence, Linden Kurt J e Society of Photo-optical Instrumentation Engineers., a cura di. Terahertz and gigahertz electronics and photonics VI: 21-22 January 2007, San Jose, California, USA. Bellingham, Wash: SPIE, 2007.

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Jennifer, Hwu R., Linden Kurt J e Society of Photo-optical Instrumentation Engineers., a cura di. Terahertz and gigahertz electronics and photonics IV: 23-25 January 2005, San Jose, California, USA. Bellingham, Wash., USA: SPIE, 2005.

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Più fonti

Capitoli di libri sul tema "Terahertz electronics":

Feiginov, Michael, Ramón Gonzalo, Itziar Maestrojuán, Oleg Cojocari, Matthias Hoefle e Ernesto Limiti. "THz Electronics". In Semiconductor Terahertz Technology, 254–303. Chichester, UK: John Wiley & Sons, Ltd, 2015. http://dx.doi.org/10.1002/9781118920411.ch6.

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Hirakawa, K. "Terahertz Spectroscopy of Nanostructures". In Mesoscopic Physics and Electronics, 96–103. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-71976-9_13.

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Rieh, Jae-Sung. "Introduction". In Introduction to Terahertz Electronics, 1–17. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_1.

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Rieh, Jae-Sung. "THz Sources and Related Topics". In Introduction to Terahertz Electronics, 19–93. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_2.

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Rieh, Jae-Sung. "THz Detectors and Related Topics". In Introduction to Terahertz Electronics, 95–161. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_3.

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Rieh, Jae-Sung. "THz Propagation and Related Topics". In Introduction to Terahertz Electronics, 163–237. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_4.

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Rieh, Jae-Sung. "THz Optical Methods". In Introduction to Terahertz Electronics, 239–71. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_5.

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Rieh, Jae-Sung. "THz Applications". In Introduction to Terahertz Electronics, 273–350. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_6.

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Shur, M. S., e V. Ryzhii. "Emerging Solid State Terahertz Electronics". In Terahertz Sources and Systems, 169–85. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0824-2_11.

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Božanić, Mladen, e Saurabh Sinha. "Getting Ready for Terahertz Electronics". In Lecture Notes in Electrical Engineering, 221–48. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-44398-6_7.

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Atti di convegni sul tema "Terahertz electronics":

Grigoriev, A. D. "Terahertz Electronics". In 2018 13th International Conference on Actual Problems of Electron Devices Engineering (APEDE). IEEE, 2018. http://dx.doi.org/10.1109/apede.2018.8542172.

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Auston, D. H., K. P. Cheung, J. A. Valdmanis e P. R. Smith. "Ultrafast Optical Electronics: From Femtoseconds to Terahertz". In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.wa1.

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Abstract (sommario):

The use of optical techniques to generate and measure fast electronic events is a challenging approach to high speed electronics with many important potential advantages relative to conventional electronic instrumentation.

Shur, Michael. "Plasma wave terahertz electronics". In 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008). IEEE, 2008. http://dx.doi.org/10.1109/icimw.2008.4665864.

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van der Weide, D. "All electronic terahertz spectroscopy". In Ultrafast Electronics and Optoelectronics. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/ueo.2003.wc2.

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Schmid, Christoph P., Dominik Peller, Fabian Langer, Stefan Schlauderer, Christoph Lange, Tyler Cocker, Jascha Repp et al. "Terahertz lightwave electronics and valleytronics". In Ultrafast Phenomena and Nanophotonics XXIII, a cura di Markus Betz e Abdulhakem Y. Elezzabi. SPIE, 2019. http://dx.doi.org/10.1117/12.2507634.

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Lee, Thomas H. "Terahertz electronics: The last frontier". In ESSCIRC 2014 - 40th European Solid State Circuits Conference. IEEE, 2014. http://dx.doi.org/10.1109/esscirc.2014.6942017.

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Shur, Michael. "Terahertz electronics for sensing applications". In 2011 IEEE Sensors. IEEE, 2011. http://dx.doi.org/10.1109/icsens.2011.6127011.

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Shur, M. "Ballistic transport and terahertz electronics". In 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC). IEEE, 2010. http://dx.doi.org/10.1109/edssc.2010.5713680.

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Lee, Thomas. "Terahertz electronics: The last frontier". In 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2012. http://dx.doi.org/10.1109/rfic.2012.6242219.

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Lee, Thomas H. "Terahertz electronics: The last frontier". In ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948750.

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Rapporti di organizzazioni sul tema "Terahertz electronics":

Shur, Michael. Terahertz Plasma Wave Electronics. Fort Belvoir, VA: Defense Technical Information Center, giugno 2001. http://dx.doi.org/10.21236/ada398910.

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Allen, S. James. Non-Linear Terahertz Electronics with Self Organized Rare-Earth Arsenide Semi-Metal/Semiconductor Composites. Fort Belvoir, VA: Defense Technical Information Center, gennaio 1996. http://dx.doi.org/10.21236/ada329713.

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Shur, Michael S. Plasma Wave Electronic Terahertz Technology. Fort Belvoir, VA: Defense Technical Information Center, maggio 2003. http://dx.doi.org/10.21236/ada414495.

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Luo, Liang. Ultrafast terahertz electrodynamics of photonic and electronic nanostructures. Office of Scientific and Technical Information (OSTI), gennaio 2015. http://dx.doi.org/10.2172/1342531.

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VAN DER Weide, D. W. Device Measurement and Modeling System for Electronic Terahertz Sensing. Fort Belvoir, VA: Defense Technical Information Center, gennaio 2003. http://dx.doi.org/10.21236/ada431028.

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Mani, Ramesh G. Terahertz and Microwave Devices Based on the Photo-Excited Low Dimensional Electronic System. Fort Belvoir, VA: Defense Technical Information Center, marzo 2015. http://dx.doi.org/10.21236/ada622950.

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Booske, John H. Fundamental Studies of Electronic Properties of Materials and Devices for High Power, Compact Terahertz Vacuum Electron Devices. Fort Belvoir, VA: Defense Technical Information Center, dicembre 2011. http://dx.doi.org/10.21236/ada563593.

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