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Articoli di riviste sul tema "Technologie III-V"

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Autore: Grafiati

Pubblicato: 15 giugno 2024

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1

Perret, C., C. Lallement e A. Belleville. "Le Moulinet d'hydrométrie à axe horizontal à travers l'expérience française. Quel avenir pour cette technique ?" La Houille Blanche, n. 5-6 (ottobre 2018): 75–86. http://dx.doi.org/10.1051/lhb/2018054.

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Selon les résultats d'une enquête menée en 2017 auprès des gestionnaires de réseaux hydrométriques de France, Luxembourg, Suisse, Wallonie, 25 % de leur activité de jaugeages est effectuée avec un moulinet à axe horizontal. Cette technique de mesure étant encore vivace, les auteurs ont trouvé utile de constituer ici une synthèse bibliographique rappelant (i) la genèse de l'appareil, (ii) le choix différent fait par les nord américains d'une technologie à axe vertical, (iii) les principes de l'étalonnage des appareils et leur évolution (iv) l'historique des études des facteurs d'influence, (v) l'évolution des techniques de mise en œuvre de ces moulinets. En conclusion, sont présentées brièvement quelques raisons qui motivent le maintien de cet équipement dans la panoplie de savoir-faire attendus des gestionnaires de réseaux hydrométriques. Dans la mesure du possible, les auteurs ont cherché à mettre en perspective la pratique française avec celles d'autres pays. Ceci afin d'illustrer la richesse des apports de chacun et l'évolution de la pratique française en regard de celle du monde de l'hydrométrie.

2

ČULÍK, J., V. KELLNER, B. ŠPINAR, J. PROKEŠ e G. BASAŘOVÁ. "Volatile N-nitrosamines in malt. III. Effect of barley germination on the formation of natural precursors of N-nitrosodimethylamine in green malt and final malt." Kvasny Prumysl 36, n. 6 (1 giugno 1990): 162–65. http://dx.doi.org/10.18832/kp1990020.

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3

Kawanami, H. "Heteroepitaxial technologies of III–V on Si". Solar Energy Materials and Solar Cells 66, n. 1-4 (febbraio 2001): 479–86. http://dx.doi.org/10.1016/s0927-0248(00)00209-9.

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4

Dutta, Nlloy K. "III-V Device Technologies for Lightwave Applications". AT&T Technical Journal 68, n. 1 (2 gennaio 1989): 5–18. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00642.x.

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5

Shah, Nitin J., e Shin-Shem Pei. "III-V Device Technologies for Electronic Applications". AT&T Technical Journal 68, n. 1 (2 gennaio 1989): 19–28. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00643.x.

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6

Takagi, S., R. Zhang, S. H. Kim, M. Yokoyama e M. Takenaka. "(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETs". ECS Transactions 58, n. 9 (31 agosto 2013): 137–48. http://dx.doi.org/10.1149/05809.0137ecst.

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7

Heinecke, Harald, e Eberhard Veuhoff. "Evaluation of III–V growth technologies for optoelectronic applications". Materials Science and Engineering: B 21, n. 2-3 (novembre 1993): 120–29. http://dx.doi.org/10.1016/0921-5107(93)90334-j.

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8

Raj, Vidur, Tuomas Haggren, Wei Wen Wong, Hark Hoe Tan e Chennupati Jagadish. "Topical review: pathways toward cost-effective single-junction III–V solar cells". Journal of Physics D: Applied Physics 55, n. 14 (3 dicembre 2021): 143002. http://dx.doi.org/10.1088/1361-6463/ac3aa9.

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Abstract III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

9

Caimi, D., H. Schmid, T. Morf, P. Mueller, M. Sousa, K. E. Moselund e C. B. Zota. "III-V-on-Si transistor technologies: Performance boosters and integration". Solid-State Electronics 185 (novembre 2021): 108077. http://dx.doi.org/10.1016/j.sse.2021.108077.

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10

Takagi, S., M. Kim, M. Noguchi, K. Nishi e M. Takenaka. "(Invited) Tunneling FET Technologies Using III-V and Ge Materials". ECS Transactions 69, n. 10 (2 ottobre 2015): 99–108. http://dx.doi.org/10.1149/06910.0099ecst.

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11

Takagi, S., e M. Takenaka. "(Invited) III-V/Ge MOS Transistor Technologies for Future ULSI". ECS Transactions 54, n. 1 (28 giugno 2013): 39–54. http://dx.doi.org/10.1149/05401.0039ecst.

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12

Tomioka, Katsuhiro, Hironori Gamo e Junichi Motohisa. "(Invited) Vertical Tunnel FET Technologies Using III-V/Si Heterojunction". ECS Transactions 92, n. 4 (3 luglio 2019): 71–78. http://dx.doi.org/10.1149/09204.0071ecst.

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13

Nedelcu, Alexandru, Cyrille Bonvalot, Rachid Taalat, Jérôme Fantini, Thierry Colin, Philippe Muller, Odile Huet et al. "III-V detector technologies at Sofradir: Dealing with image quality". Infrared Physics & Technology 94 (novembre 2018): 273–79. http://dx.doi.org/10.1016/j.infrared.2018.09.027.

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14

Tongesayi, Tsanangurayi, e Ronald B. Smart. "Arsenic Speciation: Reduction of Arsenic(V) to Arsenic(III) by Fulvic Acid". Environmental Chemistry 3, n. 2 (2006): 137. http://dx.doi.org/10.1071/en05095.

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Environmental Context.Most technologies for arsenic removal from water are based on the oxidation of the more toxic and more mobile arsenic(iii) to the less toxic and less mobile arsenic(v). As a result, research effort has been focussed on the oxidation of arsenic(iii) to arsenic(v). It is equally important to explore environmental factors that enhance the reduction of arsenic(v) to arsenic(iii). An understanding of the redox cycling of arsenic could result in the development of cheaper and more efficient arsenic removal technologies, especially for impoverished communities severely threatened by arsenic contamination. Abstract.The objective of this study was to investigate the reduction of inorganic arsenic(v) with Suwannee River fulvic acid (FA) in aqueous solutions where pH, [FA], [As(v)], [As(iii)], and [Fe(iii)] were independently varied. Samples of inorganic As(v) were incubated with FA in both light and dark at constant temperature. Sterilisation techniques were employed to ensure abiotic conditions. Aliquots from the incubated samples were taken at various time intervals and analysed for As(iii) using square-wave cathodic-stripping voltammetry at a hanging mercury drop electrode. The study demonstrated the following important aspects of As speciation: (1) FA can significantly reduce As(v) to As(iii); (2) reduction of As(v) to As(iii) is a function of time; (3) both dark and light conditions promote reduction of As(v) to As(iii); (4) Fe(iii) speeds up the reduction reaction; and (5) oxidation of As(iii) to As(v) is promoted at pH 2 more than at pH 6.

15

CHANG, M. F., e P. M. ASBECK. "III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS". International Journal of High Speed Electronics and Systems 01, n. 03n04 (settembre 1990): 245–301. http://dx.doi.org/10.1142/s0129156490000137.

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Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

16

Takagi, Shinichi, Rui Zhang, Junkyo Suh, Sang-Hyeon Kim, Masafumi Yokoyama, Koichi Nishi e Mitsuru Takenaka. "III–V/Ge channel MOS device technologies in nano CMOS era". Japanese Journal of Applied Physics 54, n. 6S1 (7 maggio 2015): 06FA01. http://dx.doi.org/10.7567/jjap.54.06fa01.

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17

KAMIMURA, Ryuichiro, e Kanji FURUTA. "Dry Etching Technologies of Optical Device and III-V Compound Semiconductors". IEICE Transactions on Electronics E100.C, n. 2 (2017): 150–55. http://dx.doi.org/10.1587/transele.e100.c.150.

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18

Takagi, S., C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han e M. Takenaka. "(Invited) MOS Interface Control Technologies for Advanced III-V/ Ge Devices". ECS Transactions 69, n. 5 (2 ottobre 2015): 37–51. http://dx.doi.org/10.1149/06905.0037ecst.

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19

Takagi, Shinichi, Rui Zhang, Takuya Hoshii, Noriyuki Taoka e Mitsuru Takenaka. "(Invited) MOS Interface Control Technologies for III-V/Ge Channel MOSFETs". ECS Transactions 41, n. 3 (16 dicembre 2019): 3–20. http://dx.doi.org/10.1149/1.3633015.

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Takagi, Shinichi, Masafumi Yokoyama, Sang-Hyeon Kim, Rui Zhang e Mitsuru Takenaka. "(Invited) Device and Integration Technologies of III-V/Ge Channel CMOS". ECS Transactions 41, n. 7 (16 dicembre 2019): 203–18. http://dx.doi.org/10.1149/1.3633300.

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21

Takagi, Shinichi, Dae-Hwan Ahn, Munetaka Noguchi, Sanghee Yoon, Takahiro Gotow, Koichi Nishi, Minsoo Kim et al. "(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials". ECS Transactions 80, n. 4 (1 agosto 2017): 115–24. http://dx.doi.org/10.1149/08004.0115ecst.

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22

Takagi, S., M. Noguchi, M. Kim, S. H. Kim, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke e M. Takenaka. "III-V/Ge MOS device technologies for low power integrated systems". Solid-State Electronics 125 (novembre 2016): 82–102. http://dx.doi.org/10.1016/j.sse.2016.07.002.

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23

Heyns, Marc M., Marc M. Meuris e Matty R. Caymax. "Ge and III/V as Enabling Materials for Future CMOS Technologies". ECS Transactions 3, n. 7 (21 dicembre 2019): 511–18. http://dx.doi.org/10.1149/1.2355848.

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24

Dautremont-Smith, William C., R. J. McCoy, Randolph H. Burton e Albert G. Baca. "Fabrication Technologies for III-V Compound Semiconductor Photonic and Electronic Devices". AT&T Technical Journal 68, n. 1 (2 gennaio 1989): 64–82. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00647.x.

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25

Zeng, Cong, Donghui Fu, Yunjiang Jin e Yu Han. "Recent Progress in III–V Photodetectors Grown on Silicon". Photonics 10, n. 5 (14 maggio 2023): 573. http://dx.doi.org/10.3390/photonics10050573.

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Abstract (sommario):

An efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si photonics in various applications. Monolithic integration of III–V PDs on Si by direct heteroepitaxy exhibits the lowest cost, the largest integration density, and the highest throughput. As the research of integrating III–V lasers on Si flourishes in the last decade, various types of III–V PDs on Si with different device structures and absorption materials have also been developed. While the integration of III–V lasers on Si using various technologies has been systematically reviewed, there are few reviews of integrating III–V PDs on Si. In this article, we review the most recent advances in III–V PDs directly grown on Si using two different epitaxial techniques: blanket heteroepitaxy and selective heteroepitaxy.

26

Kühn, G. "Landolt-Börnstein. Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie, Gruppe III: Kristall- und Festkörperphysik Bd. 17: Halbleiter, Teilband d: Technologie von III—V, II—VI und nicht-tetraedrisch gebundenen Verbindungen. Herausgegeben von M. Schulz und H. Weiss. Springer-Verlag Berlin, Heidelberg, New York, Tokyo, 429 Seiten, 446 Abbildungen, zahlreiche Tabellen und Literaturzitate. Preis: DM 750.00. ISBN 3–540–11779–2". Crystal Research and Technology 20, n. 7 (luglio 1985): 898. http://dx.doi.org/10.1002/crat.2170200705.

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27

Simon, John, Kevin Schulte, Kelsey Horowitz, Timothy Remo, David Young e Aaron Ptak. "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy". Crystals 9, n. 1 (20 dicembre 2018): 3. http://dx.doi.org/10.3390/cryst9010003.

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Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

28

Lan, Luis E., Fernando D. Reina, Graciela E. De Seta, Jorge M. Meichtry e Marta I. Litter. "Comparison between Different Technologies (Zerovalent Iron, Coagulation-Flocculation, Adsorption) for Arsenic Treatment at High Concentrations". Water 15, n. 8 (11 aprile 2023): 1481. http://dx.doi.org/10.3390/w15081481.

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The presence of arsenic in water for human consumption is of concern, especially in developing countries, and the design of simple and economic treatments for arsenic removal is imperative. In this paper, three low-cost technologies were evaluated for As(V) or As(III) (5 mg L−1) removal: (1) zerovalent iron (Fe(0)), as powdered (μFe(0)) and iron wool (wFe(0)); (2) coagulation-flocculation with Al2(SO4)3 or FeCl3; and (3) adsorption on a natural clay. μFe(0) was more efficient than wFe(0), requiring a minimal dose of 0.25 g L−1 to achieve [As(V)] < 0.01 mg L−1 after 288 h; the reaction time was reduced to 168 h under stirring. When starting from As(III), partial oxidation to As(V) was observed, and removal was not complete even after 648 h with 1 g L−1 μFe(0). As(V) removal using FeCl3 and Al2(SO4)3 was very fast and completed in 15 min with 0.25 g L−1 of both reagents. However, Al2(SO4)3 was not efficient to remove As(III). With the clay, doses higher than 50 g L−1 and times longer than 648 h were needed to remove both As species. Arsenic leached from μFe(0) used to treat As(III) was almost negligible. Thus, Fe(0) may be the best alternative for low-cost, small-scale applications.

29

Akram, Sabahat, Hajra Faraqat e Saadia Bano Hashmi. "Examining the Impact of Information and Communication Technologies on Female Economic Participation in Pakistan". Global Economics Review V, n. III (30 settembre 2020): 118–30. http://dx.doi.org/10.31703/ger.2020(v-iii).11.

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This study is an attempt to investigate the impact of information and communication technologies (ICTs) development on the participation of women in economic activities in Pakistan. Data for the period 1991-2017 was used for this research work and regressed on female economic involvement and ICTs development and another set of control variables like GDP, FDI and trade liberalization. Data sources are the WDI, IFS, and ESP. Johansen cointegration test, VECM and Granger causality tests were used to estimate data. Estimation techniques were applied after checking the properties of time series data. Results indicate the positive and significant relationship of dependent variable female economic participation and independent variables ICTs development and macro-economic variables in the long run. The study findings indicate that female economic participation has increased with the increase in ICTs in Pakistan. However, the rate of women's economic participation was not found as increasing as in other developed countries, and it is not as rapid as technology developed in the last decade.

30

Takagi, S., M. Yokoyama, S. H. Kim, R. Zhang, R. Suzuki, N. Taoka e M. Takenaka. "(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications". ECS Transactions 53, n. 3 (2 maggio 2013): 85–96. http://dx.doi.org/10.1149/05303.0085ecst.

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31

Zhao, Lixia. "Studies of III-V Semiconductor Materials and Devices Using Different Analytical Technologies". Journal of Surface Analysis 26, n. 2 (2019): 136–37. http://dx.doi.org/10.1384/jsa.26.136.

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32

Claeys, C., P.-C. Hsu, L. He, Y. Mols, R. Langer, N. Waldron, G. Eneman, N. Collaert, M. Heyns e E. Simoen. "Are Extended Defects a Show Stopper for Future III-V CMOS Technologies". Journal of Physics: Conference Series 1190 (maggio 2019): 012001. http://dx.doi.org/10.1088/1742-6596/1190/1/012001.

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33

Takagi, S., S. H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda et al. "High mobility CMOS technologies using III–V/Ge channels on Si platform". Solid-State Electronics 88 (ottobre 2013): 2–8. http://dx.doi.org/10.1016/j.sse.2013.04.020.

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34

Kerio, Ghulam Ali, Naimatullah Keeryo e Anjum Bano Kazimi. "A Qualitative Study on Classroom Management of Undergraduate Students: A Case of Information Technologies Class". Global Regional Review V, n. III (30 settembre 2020): 91–100. http://dx.doi.org/10.31703/grr.2020(v-iii).10.

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The purpose of the current study was to explore the classroom management problems faced by teachers of ICT. The study revealed the underlying problems and highlighted the reasons behind the issues. Moreover, the study suggested a possible solution for effective classroom management. A questionnaire comprising 10 open-ended questions was prepared to collect data from 3 teachers who were teaching at universities to undergraduate students. Interviews were conducted with the participants to know their responses. The responses were analyzed using thematic analysis/content analysis. The study concluded that students' disruptive behavior is a common classroom issue that teachers face in their instruction process. Teachers can deal with classroom management issues by developing a positive relationship, student-centred approaches and supportive attitude for learning. The study recommends that the administration must ensure the availability of all the essential ICT resources to assist teachers in effective classroom management.

35

Wattoo, Rashid Minas, Muhammad Latif e Namra Munir. "Information Communication Technologies Hauling Out University Students' Effective Learning during COVID-19: A Qualitative Study". Global Social Sciences Review V, n. III (30 settembre 2020): 351–57. http://dx.doi.org/10.31703/gssr.2020(v-iii).37.

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The COVID-19 pandemic has brought significant improvements in the world's educational practices and has become a realization of the ideal of online education, whereas COVID-19 is a global problem that affects institutions of higher education (HEIs). The present study is based on the research question: what are the challenges and benefits of ICTs for hauling out university students' effective learning in the context of the COVID-19 pandemic? The study employed a qualitative research design, and a cross-sectional analysis approach was adopted to resolve the key research question. The research sample included 20 BS and MA level students, and during a session, an interview was conducted in the form of open-ended questions. The research concluded university students need internet access 24/7 within the premises and outside the university; in fact, they require free internet access. The study may suggest that the university may provide needy students with university data bundles and laptops.

36

Seo, Jung-Hun. "Editorial for the Special Issue on Wide Bandgap Semiconductor Based Micro/Nano Devices". Micromachines 10, n. 3 (26 marzo 2019): 213. http://dx.doi.org/10.3390/mi10030213.

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37

Brennan, B., S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim e R. M. Wallace. "In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition". Solid State Phenomena 195 (dicembre 2012): 90–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.90.

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Atomic layer deposition (ALD) of high dielectric constant (high-k) materials for ULSI technologies is now widely adopted in Si-based CMOS production. Extending the scaling of integrated circuit technology has now resulted in the investigation of transistors incorporating alternative channel materials, such as III-V compounds. The control of the interfacial chemistry between a high-k dielectric and III-V materials presents a formidable challenge compared to that surmounted by Si-based technologies. The bonding configuration is obviously more complicated for a compound semiconductor, and thus an enhanced propensity to form interfacial defects is anticipated, as well as the need for surface passivation methods to mitigate such defects. In this work, we outline our recent results using in-situ methods to study the ALD high-k/III-V interface. We begin by briefly summarizing our results for III-As compounds, and then further discuss recent work on III-P and III-Sb compounds. While arsenides are under consideration for nMOS devices, antimonides are of interest for pMOS. InP is under consideration for quantum well channel MOS structures in order to serve as a better nMOS channel interface. In all cases, a high-k dielectric interface is employed to limit off-state tunneling current leakage.

38

Du, Yong, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang e Henry H. Radamson. "Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon". Nanomaterials 12, n. 5 (22 febbraio 2022): 741. http://dx.doi.org/10.3390/nano12050741.

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Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material and Si, which inevitably leads to the formation of high threading dislocation densities (TDDs) and anti-phase boundaries (APBs). In view of the above-mentioned growth problems, this review details the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-V hetero-epitaxial growth on Si substrates. Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed. Besides, we highlight the advanced technologies, such as the miscut substrate, multi-type buffer layer, strain superlattice (SLs), and epitaxial lateral overgrowth (ELO), to decrease the TDDs and APBs. To achieve high performance OEICs, the growth strategy and development trend for group III-V material on Si platform were also emphasized.

39

Takenaka, Mitsuru, e Shinichi Takagi. "III-V/Ge Device Engineering for CMOS Photonics". Materials Science Forum 783-786 (maggio 2014): 2028–33. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2028.

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Heterogeneous integration of III-V compound semiconductors and Ge on the Si platform is one of the promising technologies for enhancing the performance of metal-oxide-semiconductor field effect transistors (MOSFETs) beyond the 10-nm technology node because of their high carrier mobilities. In addition, the III-Vs and Ge are also promising materials for photonic devices. Thus, we have investigated III-V/Ge device engineering for CMOS photonics, enabling monolithic integration of high-performance III-V/Ge CMOS transistors and III-V/Ge photonics on Si. The direct wafer bonding of III-V on Si has been investigated to form III-V on Insulator for III-V CMOS photonics. Extremely-thin-body InGaAs MOSFETs with the gate length of approximately 55 nm have successfully been demonstrated by using the wafer bonding. InP-based photonic-wire waveguide devices including micro bends, arrayed waveguide gratings, grating couplers, optical switches, and InGaAs photodetectors have also been demonstrated on the III-V-OI wafer. The gate stack formation on Ge is one of the critical issues for Ge MOSFETs. Recently, we have successfully demonstrated high-quality GeOx/Ge MOS interfaces formed by thermal oxidation and plasma oxidation. High-performance Ge pMOSFET and nMOSFET with thin EOT have been obtained using the GeOx/Ge MOS interfaces. We have also demonstrated that GeOx surface passivation is effective to reduce the dark current of Ge photodetectors in conjunction with gas-phase doped junction. We have also investigated strained SiGe optical modulators. We expect that compressive strain in SiGe enhances modulation efficiency, and an extremely small VπL of 0.033 V-cm is predicted. III-V/Ge heterogeneous integration is one of the promising ways for achieving ultrahigh performance electronic-photonic integrated circuits.

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GAO, GUANG-BO, S. NOOR MOHAMMAND, GREGORY A. MARTIN e HADIS MORKOÇ. "FUNDAMENTALS, PERFORMANCE AND RELIABILITY OF III-V COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTORS". International Journal of High Speed Electronics and Systems 06, n. 01 (marzo 1995): 1–89. http://dx.doi.org/10.1142/s012915649500002x.

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Recent developments in the physics and technology of III-V compound heterojunction bipolar transistors (HBTs) are reviewed. The technologies discussed are AlGaAs/GaAs, GaInP/GaAs, InP/InGaAs, and AlInAs/InGaAs based heterostructures. WIth current gain cut off frequencies over 100 GHz and maximum oscillation frequencies of about 200 GHz, the III-V compound semiconductor based HBTs have advanced to the point of commercialization. These developments also had the fortuitous effect of providing impetus and theoretical base to advance Si based HBT technologies, such as SiGe HBTs, to advance also. Recent SiGe HBTs, taking advantage of advanced Si processing technologies, have also recorded performances in excess of 100 GHz with applications envisioned in high speed analog-digital converters. While there remain some voids in the fundamental understanding of HBTs, the state-of-the-art of the GaAs HBT technology, concerning reproducibility and reliability, is at a point where problems related to production are at the forefront. The next few years are going to prove interesting with each technology recording improved performance.

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Muhammad, Rehan, Shahid Nawaz e Muhammad Hammad Hussain Shah. "Teachers' Perceptions about the Use of Information Communication Technologies (ICTs) in Second Language Learning at Higher Secondary Level". Global Mass Communication Review V, n. III (30 settembre 2020): 164–74. http://dx.doi.org/10.31703/gmcr.2020(v-iii).14.

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This research is aimed at investigating the perceptions of English language teachers pertaining to the use of Information and Communication Technologies (ICTs) in second language learning. The availability of ICT resources in institutions and their application by the teachers in English Language Teaching (ELT) class was also kept infocus in this study. The use of technology has undoubtedly brought favourable results in our life. It speeds up the transfer of information and permits faster processes as well as provides a pleasant learning atmosphere. This study was carried out at a higher secondary level comprising 60 respondents from public and private institutions in the city of Multan (Punjab), Pakistan. The measurement tool questionnaire was employed for the collection of data. The development of the questionnaire was done by the researchers according to the teaching level and background of the respondents. The collected data were analyzed using SPSS. The results showed that ICT and its use in L2 learning are beneficial and may prove to be an aid in the results. It was also explored that a fully dedicated ICT apparatus is required for English language teaching and learning in educational institutions. Moreover, the training of teaching faculty in educational institutions is needed for the better application of ICTs in language teaching.

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Yoon, Jongseung. "III-V Nanomembranes for High Performance, Cost-Competitive Photovoltaics". MRS Advances 2, n. 30 (2017): 1591–96. http://dx.doi.org/10.1557/adv.2017.139.

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ABSTRACTDue to their highly favorable materials properties such as direct bandgap, appropriate bandgap energy against solar spectrum, and ability to form multiple junctions, epitaxially grown III-V compound semiconductors such as gallium arsenide have provided unmatched performance over silicon in solar energy harvesting. However, their large-scale deployment in terrestrial photovoltaics remains as a daunting challenge mainly due to the high cost of growing device-quality epitaxial materials. In this regard, releasable multilayer epitaxial growth in conjunction with printing-based deterministic materials assemblies represents a promising approach that can overcome this challenge but also create novel engineering designs and device functionalities, each with significant practical values in photovoltaic technologies. This article will provide an overview of recent advances in materials design, fabrication concept, and nanophotonic light management of multilayer-grown nanomembrane-based GaAs solar cells aiming for high performance, cost-efficient platforms of III-V photovoltaics.

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Berd, David, Takami Sato, Henry C. Maguire, John Kairys e Michael J. Mastrangelo. "Immunopharmacologic Analysis of an Autologous, Hapten-Modified Human Melanoma Vaccine". Journal of Clinical Oncology 22, n. 3 (1 febbraio 2004): 403–15. http://dx.doi.org/10.1200/jco.2004.06.043.

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Purpose We have previously reported a clinical trial of a human cancer vaccine consisting of autologous tumor cells modified with the hapten, dinitrophenyl (DNP), in patients with clinical stage III melanoma. Here we present a follow-up report expanded to 214 patients with 5-year follow-up. Patients and Methods Two hundred fourteen patients with clinical stage III melanoma (117 patients with stage IIIC and 97 patients with stage IIIB) who were melanoma-free after standard lymphadenectomy were treated with multiple intradermal injections of autologous, DNP-modified vaccine mixed with bacille Calmette-Guérin. Four vaccine dosage schedules were tested sequentially, all of which included low-dose cyclophosphamide. Patients were tested for delayed-type hypersensitivity (DTH) to autologous melanoma cells, both DNP-modified and unmodified, and to control materials. Results The 5-year overall survival (OS) rate of the 214 patients was 44%. DTH responses to unmodified autologous melanoma were induced in 47% of patients. The OS of this DTH-positive group was double that of DTH-negative patients (59.3% v 29.3%; P < .001). In contrast, positive DTH responses to DNP-modified autologous melanoma cells and to purified protein derivative developed in almost all patients but did not affect OS. Surprisingly, the OS after relapse was also significantly longer in patients who developed positive DTH to unmodified tumor cells (25.2% v 12.3%; P < .001). Finally, the development of DTH was dependent on the schedule of administration of the vaccine, specifically, the timing of an induction dose administered at the beginning of the treatment program. Conclusion This study underscores the importance of the immunopharmacology of the autologous, DNP-modified vaccine and may be relevant to other cancer vaccine technologies.

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Kong, Shu Qiong, Yan Xin Wang, Cheng Wang, Li Ling Jin, Ming Liang Liu e Mei Yu. "Nanoscale Iron-Manganese Binary Oxide for As(III) Removal in Synthesized Groundwater". Applied Mechanics and Materials 319 (maggio 2013): 209–12. http://dx.doi.org/10.4028/www.scientific.net/amm.319.209.

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Cost-effective technologies to remove arsenic from high arsenic groundwater are urgently needed for safe water supply in many countries. In this study, a new sorbent of nanoscale iron-manganese binary oxides (NIM) was prepared by an improved co-precipitation method. The as-synthesized adsorbent is amorphous with 280 m2/g surface area and particle size of 10-20nm. For the adsorption of 2 mg/L As(III), the aqueous concentration quickly decreases to less than 10 μg/L within 30 min. During the adsorption of As(III), low concentration of As(V) is measured in aqueous solution in the initial stage and disappeared afterwards, whereas the fraction of As(V) on NIM surface gradually proving the oxidative transformation of As(III) to As(V). Its batch experiment data followed pseudo-second-order kinetics.

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Feng, Qi, Wenqi Wei, Bin Zhang, Hailing Wang, Jianhuan Wang, Hui Cong, Ting Wang e Jianjun Zhang. "O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate". Applied Sciences 9, n. 3 (23 gennaio 2019): 385. http://dx.doi.org/10.3390/app9030385.

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Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocations, antiphase boundaries and thermal cracks, which limit the device performance and lifetime. This paper reviews some of the recent developments on hybrid InAs/GaAs QD growth on Ge substrates and highly uniform (111)-faceted hollow Si (001) substrates by molecular beam epitaxy (MBE). By implementing step-graded epitaxial growth techniques, the emission wavelength can be tuned into either an O band or C/L band. Furthermore, microcavity QD laser devices are fabricated and characterized. The epitaxially grown III-V/IV hybrid platform paves the way to provide a promising approach for future on-chip silicon photonic integration.

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Ji, Chunnuan, Rongjun Qu, Qinghua Tang, Xiguang Liu, Hou Chen, Changmei Sun e Peng Yin. "Removal of trace As(V) from aqueous solution by Fe(III)-loaded porous amidoximated polyacrylonitrile". Water Supply 16, n. 6 (18 maggio 2016): 1603–13. http://dx.doi.org/10.2166/ws.2016.085.

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A Fe(III)-loaded chelating resin named Fe(III) AO PAN was prepared by immobilizing Fe(III) onto porous amidoximated polyacrylonitrile (AO PAN) obtained by modification of hydroxylamine with polyacrylonitrile (PAN), which was synthesized by suspended emulsion polymerization. The structures of PAN, AO PAN, and Fe(III)-AO PAN were characterized by infrared spectrometry and scanning electron microscopy. The performance of Fe(III)-AO PAN as the ligand exchange adsorbent to remove As(V) from aqueous solution was investigated using static equilibrium and dynamic adsorption experiments. The adsorption experiments showed that Fe(III)-AO PAN had higher adsorption selectivity for As(V) than other ubiquitous anions in nature water body such as Cl−, SO42−, HCO3−, PO43−, and SiO32−. The optimal pH for adsorption of As(V) on Fe(III) AO PAN was 2.0, with the maximum adsorption capacity of 0.55 mg/g. The As(V) adsorbed on Fe(III) AO PAN could be easily eluted with 10 BV of 5% NaCl solution (at pH = 9.0).

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Xi, Jianhong, e Mengchang He. "Removal of Sb(III) and Sb(V) from aqueous media by goethite". Water Quality Research Journal 48, n. 3 (1 agosto 2013): 223–31. http://dx.doi.org/10.2166/wqrjc.2013.030.

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This study investigated the removal of Sb(III) and Sb(V) from aqueous media through their adsorption onto oxide minerals (goethite) under a set of conditions (initial Sb concentration, pH, reaction time, and interaction temperature). The kinetic studies suggested that the adsorption equilibriums for both Sb(III) and Sb(V) were achieved within 24 h. The adsorption data collected at three different temperatures were successfully modeled using both the Langmuir and Freundlich isotherms. The adsorption of Sb(III) onto goethite was greater than that of Sb(V) at the three investigated temperatures. The thermodynamic parameters (ΔG°, ΔH°, and ΔS°) were calculated from the dependence of the adsorption process on the reaction temperature, and the calculated parameters suggest that the adsorption of both Sb(III) and Sb(V) onto goethite is spontaneously endothermic. The adsorption of Sb(III) and Sb(V) on goethite was dependent on pH within the investigated pH range.

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Nayak, Bishwajit, Md Amir Hossain, Mrinal Kumar Sengupta, Saad Ahamed, Bhaskar Das, Arup Pal e Amitava Mukherjee. "Adsorption Studies with Arsenic onto Ferric Hydroxide Gel in a Non-oxidizing Environment: the Effect of Co-occurring Solutes and Speciation". Water Quality Research Journal 41, n. 3 (1 agosto 2006): 333–40. http://dx.doi.org/10.2166/wqrj.2006.037.

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Abstract Groundwater arsenic contamination has emerged as a major health threat to millions of people around the world. Studying the sorption process of As(III) and As(V) onto ferric hydroxide gel is important to understand the mobilization of arsenic under nonoxidizing conditions. Most of the previous adsorption studies were limited to single element or multi-element equilibrium in synthetic water. To investigate the effect of matrix and speciation in real groundwater systems, adsorption tests with added As(III) and As(V) separately and in mixture were conducted in both double-distilled deionized water (DDDW) and As-safe (<3 µg L-1) tubewell water. In DDDW, the As(III)/As(V) ratio in the mixture strongly influenced the sorption behaviour by shifting the adsorption edge and also the efficiency. For As(III) and As(V) mixture in 1:1 proportions in tubewell water, the adsorption of both the species decreased up to pH 8; in the alkaline ranges the adsorption extent was marginally increased in comparison to that in DDDW. When As(III):As(V) was added in 3:1 proportions in tubewell water, the adsorption of both was enhanced in alkaline ranges compared to that in DDDW. When As(V) was predominant [As(V):As(III) = 3:1] in tubewell water, no significant changes were observed for As(V), though adsorption of As(III) was notably retarded. The statistical analysis of the results indicates the concentration ratio of As species in the system has a definite impact on adsorption behaviour onto ferric hydroxide gel.

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Liu, Chun Tong, Li Bing, Wang Tao e Hong Cai Li. "Key Technologies Research of New Generation Concentrating Photovoltaic". Advanced Materials Research 724-725 (agosto 2013): 171–75. http://dx.doi.org/10.4028/www.scientific.net/amr.724-725.171.

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The new concentrating photovoltaic (CPV) with core technology of III-V multi-junction cells, can significantly reduce the cost of photovoltaic system, and with advantages of high conversion rate, light weight, small size, energy saving and environmental protection, etc, which was widely regarded as the next-generation of solar photovoltaic technology. On the basis of the introduction of related research process, the paper concentrating discuss on the key technologies such as the new efficient multi-junction cells, high performance non-imaging concentrated light technology and sun tracking system, and propose the appropriate technical solutions, which can provide reference for the application and dissemination of the new generation concentrating photovoltaic.

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Bakkers, Erik P. A. M., Magnus T. Borgström e Marcel A. Verheijen. "Epitaxial Growth of III-V Nanowires on Group IV Substrates". MRS Bulletin 32, n. 2 (febbraio 2007): 117–22. http://dx.doi.org/10.1557/mrs2007.43.

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AbstractSemiconducting nanowires are emerging as a route to combine heavily mismatched materials. The high level of control on wire dimensions and chemical composition makes them promising materials to be integrated in future silicon technologies as well as to be the active element in optoelectronic devices.This ar ticle reviews the recent progress in epitaxial growth of nanowires on non-corresponding substrates. We highlight the advantage of using small dimensions to facilitate accommodation of the lattice strain at the surface of the structures. More specifically, we will focus on the growth of III-V nanowires on Group IV substrates. This approach enables the integration of high-perform ance III-V semiconductors monolithically into mature silicon technology, since fundamental issues of III-V integration on Si such as lattice and thermal expansion mismatch can be overcome. Moreover, as there will only be one nucleation site per crystallite, the system will not suffer from antiphase boundaries.Issues that affect the electronic properties of the heterojunction, such as the crystallographic quality and diffusion of elements across the heterointerface, will be discussed. Finally, we address potential applications of vertical III-V nanowires grown on silicon.