Bibliografie tematiche / Technologie III-V

Letteratura scientifica selezionata sul tema "Technologie III-V"

Autore: Grafiati

Pubblicato: 15 giugno 2024

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Articoli di riviste sul tema "Technologie III-V":

Perret, C., C. Lallement e A. Belleville. "Le Moulinet d'hydrométrie à axe horizontal à travers l'expérience française. Quel avenir pour cette technique ?" La Houille Blanche, n. 5-6 (ottobre 2018): 75–86. http://dx.doi.org/10.1051/lhb/2018054.

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Selon les résultats d'une enquête menée en 2017 auprès des gestionnaires de réseaux hydrométriques de France, Luxembourg, Suisse, Wallonie, 25 % de leur activité de jaugeages est effectuée avec un moulinet à axe horizontal. Cette technique de mesure étant encore vivace, les auteurs ont trouvé utile de constituer ici une synthèse bibliographique rappelant (i) la genèse de l'appareil, (ii) le choix différent fait par les nord américains d'une technologie à axe vertical, (iii) les principes de l'étalonnage des appareils et leur évolution (iv) l'historique des études des facteurs d'influence, (v) l'évolution des techniques de mise en œuvre de ces moulinets. En conclusion, sont présentées brièvement quelques raisons qui motivent le maintien de cet équipement dans la panoplie de savoir-faire attendus des gestionnaires de réseaux hydrométriques. Dans la mesure du possible, les auteurs ont cherché à mettre en perspective la pratique française avec celles d'autres pays. Ceci afin d'illustrer la richesse des apports de chacun et l'évolution de la pratique française en regard de celle du monde de l'hydrométrie.

ČULÍK, J., V. KELLNER, B. ŠPINAR, J. PROKEŠ e G. BASAŘOVÁ. "Volatile N-nitrosamines in malt. III. Effect of barley germination on the formation of natural precursors of N-nitrosodimethylamine in green malt and final malt." Kvasny Prumysl 36, n. 6 (1 giugno 1990): 162–65. http://dx.doi.org/10.18832/kp1990020.

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Kawanami, H. "Heteroepitaxial technologies of III–V on Si". Solar Energy Materials and Solar Cells 66, n. 1-4 (febbraio 2001): 479–86. http://dx.doi.org/10.1016/s0927-0248(00)00209-9.

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Dutta, Nlloy K. "III-V Device Technologies for Lightwave Applications". AT&T Technical Journal 68, n. 1 (2 gennaio 1989): 5–18. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00642.x.

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Shah, Nitin J., e Shin-Shem Pei. "III-V Device Technologies for Electronic Applications". AT&T Technical Journal 68, n. 1 (2 gennaio 1989): 19–28. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00643.x.

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Takagi, S., R. Zhang, S. H. Kim, M. Yokoyama e M. Takenaka. "(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETs". ECS Transactions 58, n. 9 (31 agosto 2013): 137–48. http://dx.doi.org/10.1149/05809.0137ecst.

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Heinecke, Harald, e Eberhard Veuhoff. "Evaluation of III–V growth technologies for optoelectronic applications". Materials Science and Engineering: B 21, n. 2-3 (novembre 1993): 120–29. http://dx.doi.org/10.1016/0921-5107(93)90334-j.

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Raj, Vidur, Tuomas Haggren, Wei Wen Wong, Hark Hoe Tan e Chennupati Jagadish. "Topical review: pathways toward cost-effective single-junction III–V solar cells". Journal of Physics D: Applied Physics 55, n. 14 (3 dicembre 2021): 143002. http://dx.doi.org/10.1088/1361-6463/ac3aa9.

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Abstract III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

Caimi, D., H. Schmid, T. Morf, P. Mueller, M. Sousa, K. E. Moselund e C. B. Zota. "III-V-on-Si transistor technologies: Performance boosters and integration". Solid-State Electronics 185 (novembre 2021): 108077. http://dx.doi.org/10.1016/j.sse.2021.108077.

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Takagi, S., M. Kim, M. Noguchi, K. Nishi e M. Takenaka. "(Invited) Tunneling FET Technologies Using III-V and Ge Materials". ECS Transactions 69, n. 10 (2 ottobre 2015): 99–108. http://dx.doi.org/10.1149/06910.0099ecst.

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Più fonti

Tesi sul tema "Technologie III-V":

Fawaz, Hussein. "Technologie multifonction de transistors à effet de champ sur matériaux III-V pour logique rapide et hyperfréquences". Lille 1, 1993. http://www.theses.fr/1993LIL10038.

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Callen, Olivier. "Nouvelle méthode d'investigation par effet Hall des états d'interface dans les composants à base d'hétérostructures III-V". Montpellier 2, 2000. http://www.theses.fr/2000MON20029.

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Cette these demontre l'interet des heterostructures semi-conductrices pour la caracterisation des etats presents aux interfaces dielectrique/semi-conducteur (d/sc), etats qui jouent un role important dans les composants electroniques actuels. Deux methodes originales de caracterisation de l'interface d/sc sont proposees. La premiere est une methode de mesure du spectre dit(e) des etats d'interface. Elle est basee sur la mesure de la densite de porteurs ns dans des motifs de hall recouverts du dielectrique a caracteriser et equipes d'une grille metallique (structures mis-h : metal-isolant-semiconducteur a heterostructure). Dans ces structures, ns est en effet l'image directe du niveau de fermi a la surface du sc. Cette propriete permet d'acceder a dit par la mesure dc de la tension de hall en fonction de la tension de grille vg. Cette methode se distingue des methodes usuelles (c-v, analyse de la conductance et dlts) par sa precision, sa capacite a mesurer des densites d'etats elevees et sa facilite de mise en uvre. La seconde methode, baptisee cfts (spectroscopie par analyse de transitoires effectues a niveau de fermi constant), permet de situer dit par rapport a la bande interdite du sc. Elle est basee sur la fixation par un asservissement externe du niveau de fermi dans la structure. A l'interface sinx/gaas, nous mesurons un spectre dit a profil en u avec un minimum de 4. 10 1 2 cm 2. Ev 1 situe a 0. 8 ev du minimum de la bande de conduction. Les spectres obtenus ont ete introduits dans un modele detaille de la reponse dynamique des composants. L'excellent accord mesures/modele, quel que soit le regime d'excitation de vg (continu, alternatif et transitoire), confirme la validite de la methode de determination de dit et la coherence de la modelisation proposee. Ces deux methodes composent un ensemble coherent de caracterisation des etats d'interface dans une heterostructure, applicable quelle que soit la filiere technologique des heterostructures.

Le, Pallec Michel. "Technologie de photorécepteurs intégrés sur InP". Grenoble INPG, 1997. http://www.theses.fr/1997INPG0144.

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Ce memoire de these rend compte d'une etude de circuits integres optoelectroniques sur substrat inp dans le contexte des transmissions optiques par multiplexage de longueur d'onde. Le travail traite tous les aspects de la technologie d'un photorecepteur integre multicanaux : epitaxie movpe simultanee de transistors et de photodetecteurs pin gainas, etude des structures et des methodes d'elaboration donnant des dispositifs integres aussi performants que des composants discrets, mise en oeuvre d'un procede avec le minimum de niveaux de masques, aboutissant a une puce de tres petite taille (1,2 x 1,2 mm#2). Le calcul de sensibilite du photorecepteur montre qu'il est necessaire d'utiliser un transistor rapide (f#t elevee) a faible courant de grille. Les simulations numeriques ont demontre l'interet du transistor a canal composite gainas/inp a dopage inverse face a ces exigences. Ce transitor a ete realise et valide en utilisant un nouveau buffer, isolant et reproductible : un buffer alinas epitaxie a basse temperature. De plus, les circuits transimpedances et les compromis simplicite/performance sont examines en detail et les composants elementaires (resistances, capacites, diodes schottky, fets, photodiodes pin) sont caracterises et simules avec precision en statique, en dynamique et en bruit. La conception du jeu de masques a ete menee a bien sur la base de ces modeles et la realisation technologique a ete reussie depuis l'epitaxie jusqu'au montage d'une puce de photorecepteurs avec 4 canaux pin-amplificateurs. Les sensibilites des ces barrettes, concues pour un debit de quatre fois 2,5 gbit/s, sont au meilleur niveau de l'etat de l'art (-29 dbm). La diaphonie entre canaux est identifiee comme le parametre le plus critique. Des ameliorations possibles concernant surtout les methodes de montage sont clairement proposees.

Ung, Thuy Dieu Thi. "SYNTHÈSE ET CARACTÉRISATION DE NANOCRISTAUX COLLOÏDAUX DE SEMI-CONDUCTEURS III-V DOPÉS PAR DES TERRES RARES". Phd thesis, Grenoble, 2010. http://tel.archives-ouvertes.fr/tel-00626513.

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Cette thèse s'est axée sur la synthèse de nanocristaux (NCs) colloïdaux semi-conducteurs III -V dopés par des ions de terre rare (TR) à l'aide de diverses méthodes de synthèses. Des séries quasi-monodisperses de nanocristaux InP et In(Zn)P ainsi que des NCs cœur/coquille fortement luminescent d'InP/ZnS et d'In(Zn)P/ZnS ont été synthétisés avec succès en faisant réagir le précurseur d'In (myristate d'indium) avec différents précurseurs phosphorés tel que le phosphore jaune, le PH3 gazeux ou le P(TMS)3 dans le 1-octadecene, solvant non-coordinant. Ces NCs ont été caractérisés par DRX sur poudre, MET, EDX, SFX, absorption UV-vis ainsi que par spectroscopies de photoluminescence en régime stationnaire (SSPL) et résolue en temps (TRPL). Les QDs constitués d'alliages tels que l'In(Zn)P et l'In(Zn)P/ZnS ont été synthétisés à l'aide d'une technique " one-pot " par réchauffement en additionnant le stéarate de zinc pendant la nucléation et la croissance des NCs d'InP. Les QDs composés d'un alliage In(Zn)P/ZnS présentent de fort rendement quantique (RQ) de photoluminescence (PL), supérieur à 70 %. Leur émission peut être facilement modulée dans la gamme spectrale allant de 480 à 590 nm (FWHM : 50 nm) en faisant varier le rapport molaire Zn2+ : In3+ et la température de réaction. Le fort RQPL est dû aux fluctuations existantes dans la bande passante de la structure de l'alliage In(Zn)P, qui contribue au bon confinement des photo-excitateurs. Les NCs In(Zn)P/ZnS dopés Eu ont été synthétisés avec succès en utilisant une méthode " one-pot " en trois étapes : (étape 1) synthèse des NCs " hôtes " en In(Zn)P ; (étape 2) croissance de la couche dopante contenant l'Eu ; (étape 3) synthèse de la coquille externe en ZnS. Des mesures optiques complémentaires - absorption, PL, PLE, spectroscopies de phosphorescence et TRPL - sont venues confirmer la réussite du dopage des NCs d'In(Zn)P/ZnS par l'Eu et ont mis en évidence l'existence d'un transfert énergétique par résonnance entre le In(Zn)P " hôte " et les ions Eu3+ " invités ". Enfin, nous avons étudié l'influence de l'environnement sur les caractéristiques optiques des QDs d'alliage In(Zn)P/ZnS en comparant des NCs inclus dans une couche mince et dispersés en solution colloïdale. Le spectre obtenu en SSPL pour des NCs In(Zn)P/ZnS inclus en couche mince présente un pic à des longueurs d'ondes plus courtes par rapport au spectre obtenu en solution. De plus, les études spectroscopiques TRPL ont montré qu'en couche mince, les NCs d'In(Zn)P/ZnS présentent des durée de vie de luminescence plus courtes ainsi qu'un du décalage spectral fortement accru avec le temps retard du moment d'excitation par rapport aux NCs en solution. Les transferts énergétique par résonnance de Förster et/ou les transferts de porteurs de charges excitées entre les NCs d'In(Zn)P/ZnS sont les principales raisons d'observer ce comportement. La présence des transferts de porteurs de charges au sein des couches minces contenant des QDs d'In(Zn)P/ZnS est très importante pour leur intégration dans des dispositifs optoélectroniques tels que les QD LEDs ou les transistors à effet de champs luminescents (LEFETs).

Sciancalepore, Corrado. "Intégration hétérogène III-V sur silicium de microlasers à émission par la surface à base de cristaux photoniques". Phd thesis, Ecole Centrale de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00915280.

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La croissance continue et rapide du trafic de données dans les infrastructures de télécommunications, impose des niveaux de débit de transmission ainsi que de puissance de traitement de l'information, que les capacités intrinsèques des systèmes et microcircuits électroniques ne seront plus en mesure d'assurer à brève échéance : le développement de nouveaux scenarii technologiques s'avère indispensable pour répondre à la demande de bande passante imposée notamment par la révolution de l'internet, tout en préservant une consommation énergétique raisonnable. Dans ce contexte, l'intégration hétérogène fonctionnelle sur silicium de dispositifs photoniques à émission par la surface de type VCSEL utilisant des miroirs large-bandes ultra-compacts à cristaux photoniques constitue une stratégie prometteuse pour surmonter l'impasse technologique actuelle, tout en ouvrant la voie à un développement rapide d'architectures et de systèmes de communications innovants dans le cadre du mariage entre photonique et micro-nano-électronique.

Mbow, Babacar. "Etude des réponses spectrales dans le proche infra-rouge des composés mixtes III-V, ternaires et quaternaires, à base de GaSb et de leurs dérivés". Montpellier 2, 1992. http://www.theses.fr/1992MON20048.

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Des mesures de reponse spectrale dans la gamme (0,4 ev a 2 ev) ont ete effectuees sur des homojonctions gasb#n/gasb#p, ga#1##xin#xsb#n/ga#1##xin#xsb#p, ga#1##xal#xsb#p/ga#1##xal#xsb#n deposees sur un substrat de gasb et des hetero-structures ternaires ga#1##xin#xsb#p/gasb#n et quaternaires avec effet fenetre gasb#p/ga#1##xin#xas#1##ysb#y#n/gasb#n. Des modeles theoriques sur le calcul du rendement quantique de ces dispositifs sont proposes. En s'appuyant sur les resultats de la simulation et en accordant les spectres experimentaux aux spectres theoriques, on determine les valeurs des parametres photoelectriques (longueurs de diffusion, les vitesses de recombinaison en surface. . . ) intervenant dans le rendement quantique

Bringer, Charlotte. "Technologie et caractérisation des VCSELs à diaphragme d'oxyde : application à la détection en cavité verticale". Toulouse 3, 2005. http://www.theses.fr/2005TOU30008.

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Ce travail de thèse porte sur la fabrication et la caractérisation de lasers à cavité verticale émettant par la surface à diaphragme d'oxyde enterré (VCSELs AlOx) émettant à 850 nm. Tout d'abord, nous détaillons la conception de la structure ainsi que le procédé de fabrication. Les caractérisations optiques et électriques permettent de mettre en évidence l'amélioration des performances de ces composants et d'identifier les limitations actuelles. Ensuite, nous exposons le principe des détecteurs en cavité résonante puis déclinons chaque géométrie verticale explorée : photodétecteur simple, VCSEL standard et BiVCSEL. Le comportement spectral mesuré sur chacun de ces composants est rapporté puis discuté. La dernière partie porte sur la détection latérale intégrée mettant en oeuvre le guidage optique de l'émission spontanée entre VCSELs voisins partageant la même cavité. La principale application de ce nouveau système de détection concerne l'asservissement de la puissance émise par le VCSEL
This work deals with the fabrication and the characterization of buried oxide-confined vertical-cavity surface-emitting lasers (VCSELs AlOx) for emission at 850 nm. We first focus on the structure design and on the fabrication steps. Optical and electrical measurements show the improvements of the VCSELs characteristics and allow for identify current limitations. Further, we explain the principle of resonant cavity enhanced detector and then describe each detailed vertical geometry: single photodetector, standard VCSEL and BiVCSEL. Measured spectral behaviors on each device are show and discussed. Last part deals with lateral integrated detection owing the optical waveguiding of spontaneous emission between neighboting VCSELs sharing the same cavity. The main application of this new detection system concerns the VCSEL power monitoring

BRINGER, Charlotte. "Technologie et caractérisation des VCSELs à diaphragme d'oxyde. Application à la détection en cavité verticale". Phd thesis, Université Paul Sabatier - Toulouse III, 2005. http://tel.archives-ouvertes.fr/tel-00010239.

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Ce travail de thèse porte sur la fabrication et la caractérisation de lasers à cavité verticale émettant par la surface à diaphragme d'oxyde enterré (VCSELs AlOx) pour les communications optiques et les microsystèmes. Ces composants deviennent de sérieux concurrents aux diodes laser classiques dans les liens de communications à courte distance. De plus, la réalisation de microsystèmes optiques intelligents nécessite de créer des composants photoniques qui soient multifonctions. Ainsi, nos travaux concernent-ils plus particulièrement l'intégration de la photodétection dans une structure VCSEL. Après un rappel sur les fonctions optiques dans les VCSELs, nous discutons des différentes possibilités d'intégration de la détection en cavité verticale. Nous nous penchons ensuite sur la réalisation de sources monomodes émettant à 850~nm pour ces applications. La conception de la structure ainsi que le procédé de fabrication détaillé. Nous insistons sur l'étude des paramètres expérimentaux influençant la qualité de l'oxydation thermique humide, étape technologique cruciale servant à créer le diaphragme d'oxyde enterré. Nous exposons les choix technologiques effectués puis nous présentons les bancs de mesures utilisés. Les caractérisations optiques et électriques permettent de mettre en évidence l'amélioration des performances de ces composants et d'identifier les limitations actuelles. Nous exposons le principe des détecteurs en cavité résonante puis déclinons chaque géométrie verticale explorée : photodétecteur simple, VCSEL standard et BiVCSEL. Le comportement spectral mesuré sur chacun de ces composants est rapporté et discuté. La détection latérale entre VCSELs voisins est ensuite étudiée du point de vue théorique et expérimental. Le principe physique mis en jeu dans cette étude originale est le guidage optique de l'émission spontanée entre VCSELs voisins partageant la même cavité. Les résultats de nos mesures électriques et optiques sont exposés. La principale applic ation de ce nouveau système de détection concerne l'asservissement de la puissance émise par le VCSEL. Enfin, nous concluons sur les apports des diverses géométries adoptées et ouvrons sur les perspectives.

Bouguen, Laure. "Annulation de la dérive thermique de capteurs magnétiques à base d'hétérostructures pseudomorphiques AlGaAs/InGaAs/GaAs". Montpellier 2, 2009. http://www.theses.fr/2009MON20075.

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L'objectif de cette étude était de diminuer, voire d'annuler, la dérive en température de capteurs magnétiques à base d'hétérostructures AlGaAs/InGaAs/GaAs. Pour répondre à la question posée, la solution envisagée a consisté à contrôler avec une grande précision l'ancrage du niveau de Fermi à la surface d'hétérostructures existantes. Ce contrôle a été assuré par l'adjonction d'une grille de géométrie optimisée et polarisée de façon adéquate. Nous avons montré qu'une modélisation linéaire du composant n'était pas adaptée et qu'il était nécessaire de mettre au point une analyse à deux dimensions par éléments finis rendant compte des résultats obtenus
The goal of this work was to decrease, and even cancel, the thermal drift of magnetic sensors based on pseudomorphic AlGaAs/InGaAs/GaAs heterojunction. For that, the chosen solution consisted in controlling the Fermi level pinning at the surface of existing heterojunction. This control has been done by the addition of a gate with different geometries and with a suitable polarisation. We showed that an one dimensional model was not adapted and that it was necessary to do a two dimensional analysis with the finite element method witch explain the results obtained

Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences". Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.

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Les besoins exponentiels liés aux applications exploitant le domaine THz nécessitent d'accroitre l'éventail des sources disponibles et d'optimiser leur fabrication. Dans ce travail de thèse, nous nous sommes intéressés aux diodes schottky en vue de la réalisation de multiplicateurs de fréquences. Notre travail de recherche expérimental a consisté en l'optimisation des caractéristiques de diodes schottky de filière GaAs, par le développement et la mise en œuvre d'un procédé de fabrication innovant. Dans un premier temps, nous avons réalisé des diodes schottky GaAs sur substrat GaAs de différentes tailles, pour élaborer des composants de référence. Nous avons ensuite fabriqué un composant de type flip-chip pour une application de multiplication à 150 GHz en boitier guide d'ondes. Enfin, dans le but d'améliorer les performances en puissance des diodes, nous avons optimisé leur dissipation thermique en transférant leur structure épitaxiale sur un substrat bénéficiant d'une meilleure conductivité thermique : le SiHR (silicium haute résistivité). Le procédé technologique complet de ces fabrications est détaillé, puis la dernière partie de l'étude est consacrée à leurs caractérisations. D'une part, nous avons évalué les éventuelles variations sur les caractéristiques des diodes GaAs sur GaAs, induites par les différentes tailles. D'autre part nous avons comparé les deux technologies sur les substrats SiHR et GaAs. Ce travail montre l'apport que peut présenter ce type de technologie reportée, où une diminution significative de la résistance thermique des composants est observée, et est associée à un gain notable sur la résistance série
The exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance

Più fonti

Libri sul tema "Technologie III-V":

Prost, Werner. Technologie der III/V-Halbleiter. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8.

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Li, Tingkai, Michael A. Mastro e Armin Dadgar. III-V compound semiconductors: Integration with silicon-based microelectronics. Boca Raton: Taylor & Francis, 2010.

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Conference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.

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Ekaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Ekaterinburg: Uralʹskiĭ gos. tekhn. universitet, 2001.

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Mezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Moskva: Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.

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Soldatkina, I͡A V., e Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. Moskva: MPGU, 2017.

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Li, Daoliang. Computer and Computing Technologies in Agriculture V: 5th IFIP TC 5/SIG 5.1 Conference, CCTA 2011, Beijing, China, October 29-31, 2011, Proceedings, Part III. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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Belarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Minsk: Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.

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Technologie der III/V-Halbleiter: III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997.

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Prost, Werner. Technologie der III/V-Halbleiter. III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Springer Verlag, 1997.

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Capitoli di libri sul tema "Technologie III-V":

Prost, Werner. "Einleitung". In Technologie der III/V-Halbleiter, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_1.

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Prost, Werner. "Halbleiter-Materialsysteme". In Technologie der III/V-Halbleiter, 3–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_2.

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Prost, Werner. "Halbleiterkristallzucht (GaAs)". In Technologie der III/V-Halbleiter, 19–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_3.

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Prost, Werner. "Herstellung aktiver Bauelementschichten". In Technologie der III/V-Halbleiter, 25–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_4.

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Prost, Werner. "Material-Charakterisierung von Halbleiter-Heterostrukturen". In Technologie der III/V-Halbleiter, 69–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_5.

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Prost, Werner. "Abscheidung und Charakterisierung dielektrischer Schichten". In Technologie der III/V-Halbleiter, 93–113. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_6.

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Prost, Werner. "Bauelementtechnologie". In Technologie der III/V-Halbleiter, 115–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_7.

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Prost, Werner. "Umweltschutz und Arbeitssicherheit". In Technologie der III/V-Halbleiter, 169–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8_8.

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Cheng, Keh Yung. "Material Technologies". In III–V Compound Semiconductors and Devices, 161–202. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_5.

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Singh, R. B., R. S. Paroda e Malavika Dadlani. "Science, Technology and Innovation". In India Studies in Business and Economics, 213–50. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0763-0_8.

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AbstractScience, technology and innovation (STI), targeted to solve both generic and location-specific challenges, are key drivers for transforming agri-food systems. These can transform the sustenance and low return livelihood to a profitable and respectable occupation for smallholder farmers, while motivating, attracting and empowering youth and women in agriculture. A paradigm shift is needed to: i) increase productivity, profitability, inclusiveness and efficiency of human engagement, ii) achieve complete nutrition security, iii) address the challenges of climate change, iv) adopt environment-friendly sustainable practices, and v) establish efficient farmer-market linkages. To achieve the desired goals, this chapter highlights effective pathways for: i) scaling innovations by combining ITK, conventional methods, and adopting NextGen cutting edge technologies evolved nationally or internationally, ii) enduring STI through a Gold Class education system, and iii) leveraging strong public-private partnership. The chapter also recommends increased investments in R&D, urgent need for enabling policy environment for scaling innovations and suggests clear transformative action points.

Atti di convegni sul tema "Technologie III-V":

Rodwell, M. J. W., S. Lee, C. Y. Huang, D. Elias, V. Chobpattana, B. J. Thibeault, W. Mitchell, S. Stemmer e A. C. Gossard. "High Performance III-V MOS Technologies". In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.e-8-1.

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Claeys, C., A. Firrincieli, K. Martens, J. A. Kittl e E. Simoen. "Contact technology schemes for advanced Ge and III-V CMOS technologies". In 2012 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). IEEE, 2012. http://dx.doi.org/10.1109/iccdcs.2012.6188889.

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Passlack, M., R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher e P. Fejes. "High Mobility III-V Mosfet Technology". In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319914.

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Grant, Ian R. "Progress in III-V materials technology". In European Symposium on Optics and Photonics for Defence and Security, a cura di Anthony W. Vere, James G. Grote e Francois Kajzar. SPIE, 2004. http://dx.doi.org/10.1117/12.583023.

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Passlack, Matthias. "III–V metal-oxide-semiconductor technology". In Related Materials (IPRM). IEEE, 2008. http://dx.doi.org/10.1109/iciprm.2008.4703075.

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Crean, G. M., S. Paineau, B. Corbett, D. O’Connell, K. Rodgers, F. Stain, P. V. Kelly e G. Redmond. "Hybridisation Issues for Optoelectronic Components". In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctuc1.

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In the absence of a truly integrated silicon optoelectronics technology, III-V components are likely to be an indispensable part of optoelectronic integrated systems for the foreseeable future. The development of manufacturable hybridisation technologies for III-V optoelectronic components, compatible with silicon and CMOS substrates, is therefore an essential research topic. In this paper, a review of current and emerging hybridisation technologies for optoelectronic components is presented. Technologies relevant to optoelectronic component hybridisation, including substrate removal, epitaxial lift-off, component alignment techniques, bonding and wiring processes are reviewed. Emerging novel self-assembly technologies, based on molecular tagging and recognition approaches, are also introduced. The state-of-the-art in hybridisation technology is reviewed with reference to recent US and European developments.

Chiah, Siau Ben, Xing Zhou, Binit Syamal, Kenneth Eng Kian Lee, Cheng Yeow Ng e Eugene A. Fitzgerald. "Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms". In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278196.

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Takagi, S., e M. Takenaka. "III-V/Ge CMOS technologies on Si platform". In 2010 IEEE Symposium on VLSI Technology. IEEE, 2010. http://dx.doi.org/10.1109/vlsit.2010.5556205.

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Koch, Thomas L. "III-V and Silicon Photonic Integrated Circuit Technologies". In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acp.2012.aw1a.2.

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Rapporti di organizzazioni sul tema "Technologie III-V":

Muñoz, Ernesto, Iván Hernández, Francisco González, Nathalie Cely e Iván Prieto. The Discovery of New Export Products in Ecuador. Inter-American Development Bank, giugno 2010. http://dx.doi.org/10.18235/0010828.

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This paper examines export diversification in Ecuador in the cases of fresh cut flowers, canned tuna, palm heart, broccoli and mangoes, using the theoretical framework on pioneers and discoveries developed by Hausmann and Rodrik (2003), as well as work by Sánchez and Butler (2006) on export costs and related uncertainties. It is found that the discoveries were mainly of traditional competitive advantage, with various degrees of technology adoption. The following policy implications are derived: i) innovative mechanisms to share the costs of new discoveries must be found and intellectual property rights strengthened; ii) cooperation among industry experts needs to improve; iii) deeper collective action to promote public-private partnerships should be undertaken; iv) relevant information and knowledge should be made available to all interested parties; and v) a national-level agenda should be undertaken to increase private investment in promising sectors while promoting the creation of public goods and minimizing rent-seeking behavior.

Aldendifer, Elise, McKenzie Coe, Taylor Faught, Ian Klein, Peter Kuylen, Keeli Lane, Robert Loughran et al. The Safe and Efficient Development of Offshore Transboundary Hydrocarbons: Best Practices from the North Sea and Their Application to the Gulf of Mexico. A cura di Gabriel Eckstein. Texas A&M University School of Law Program in Energy, Environmental, & Natural Resource Systems, settembre 2019. http://dx.doi.org/10.37419/eenrs.offshoretransboundaryhydrocarbons.

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Offshore hydrocarbon resources have been developed for many decades, and with technology improvements, many fields which were once impossible to develop, are now economically and technologically feasible. This has led to a growing difficulty in determining the legislative and regulatory framework for resources that straddle the recognized borders between two states. In this paper, we examine a successful framework agreement governing the transboundary resources between the United Kingdom (“U.K.”) and Norway in the North Sea, and the agreement between the United States and Mexico governing the Gulf of Mexico. Following the 2013 Energy Reform, the Mexican energy sector has been revitalized, leading to greater exploration, development, and production than ever before. This means that in the near future transboundary resources may be licensed for production, bringing the issues highlighted in this paper to the attention of multiple government and international entities. This paper seeks to recommend improvements to the transboundary framework in the Gulf of Mexico based on the successful framework agreement utilized in the North Sea. This paper begins by introducing international law for offshore resources in Part II. Part III discusses the offshore regulatory regimes in the U.K. and Norway, analyzing how the two states have successfully used bilateral agreements to facilitate cooperation regarding effective exploitation and apportionment of costs from cross-boundary offshore oil and gas projects in the North Sea. Part IV discusses the offshore regulatory regimes in the United States and Mexico and analyzes the current transboundary agreement in place for the Gulf of Mexico. Part V compares the transboundary agreement governing the North Sea and the same governing the Gulf of Mexico. We highlight the major differences in the agreements and suggest changes to the Gulf of Mexico agreement based on the successful North Sea agreement. Finally, this paper concludes and provides key policy recommendations to improve the rules and regulations surrounding the exploitation of transboundary hydrocarbons in the Gulf of Mexico.

Wilson, Thomas E., Avraham A. Levy e Tzvi Tzfira. Controlling Early Stages of DNA Repair for Gene-targeting Enhancement in Plants. United States Department of Agriculture, marzo 2012. http://dx.doi.org/10.32747/2012.7697124.bard.

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Gene targeting (GT) is a much needed technology as a tool for plant research and for the precise engineering of crop species. Recent advances in this field have shown that the presence of a DNA double-strand break (DSB) in a genomic locus is critical for the integration of an exogenous DNA molecule introduced into this locus. This integration can occur via either non-homologous end joining (NHEJ) into the break or homologous recombination (HR) between the broken genomic DNA and the introduced vector. A bottleneck for DNA integration via HR is the machinery responsible for homology search and strand invasion. Important proteins in this pathway are Rad51, Rad52 and Rad54. We proposed to combine our respective expertise: on the US side, in the design of zincfinger nucleases (ZFNs) for the induction of DNA DSBs at any desired genomic locus and in the integration of DNA molecules via NHEJ; and on the Israeli side in the HR events, downstream of the DSB, that lead to homology search and strand invasion. We sought to test three major pathways of targeted DNA integration: (i) integration by NHEJ into DSBs induced at desired sites by specially designed ZFNs; (ii) integration into DSBs induced at desired sites combined with the use of Rad51, Rad52 and Rad54 proteins to maximize the chances for efficient and precise HR-mediated vector insertion; (iii) stimulation of HR by Rad51, Rad52 and Rad54 in the absence of DSB induction. We also proposed to study the formation of dsT-DNA molecules during the transformation of plant cells. dsT-DNA molecules are an important substrate for HR and NHEJ-mediatedGT, yet the mode of their formation from single stranded T-DNA molecules is still obscure. In addition we sought to develop a system for assembly of multi-transgene binary vectors by using ZFNs. The latter may facilitate the production of binary vectors that may be ready for genome editing in transgenic plants. ZFNs were proposed for the induction of DSBs in genomic targets, namely, the FtsH2 gene whose loss of function can easily be identified in somatic tissues as white sectors, and the Cruciferin locus whose targeting by a GFP or RFP reporter vectors can give rise to fluorescent seeds. ZFNs were also proposed for the induction of DSBs in artificial targets and for assembly of multi-gene vectors. We finally sought to address two important cell types in terms of relevance to plant transformation, namely GT of germinal (egg) cells by floral dipping, and GT in somatic cells by root and leave transformation. To be successful, we made use of novel optimized expression cassettes that enable coexpression of all of the genes of interest (ZFNs and Rad genes) in the right tissues (egg or root cells) at the right time, namely when the GT vector is delivered into the cells. Methods were proposed for investigating the complementation of T-strands to dsDNA molecules in living plant cells. During the course of this research, we (i) designed, assembled and tested, in vitro, a pair of new ZFNs capable of targeting the Cruciferin gene, (ii) produced transgenic plants which expresses for ZFN monomers for targeting of the FtsH2 gene. Expression of these enzymes is controlled by constitutive or heat shock induced promoters, (iii) produced a large population of transgenic Arabidopsis lines in which mutated mGUS gene was incorporated into different genomic locations, (iv) designed a system for egg-cell-specific expression of ZFNs and RAD genes and initiate GT experiments, (v) demonstrated that we can achieve NHEJ-mediated gene replacement in plant cells (vi) developed a system for ZFN and homing endonuclease-mediated assembly of multigene plant transformation vectors and (vii) explored the mechanism of dsTDNA formation in plant cells. This work has substantially advanced our understanding of the mechanisms of DNA integration into plants and furthered the development of important new tools for GT in plants.

Dawson, William O., e Moshe Bar-Joseph. Creating an Ally from an Adversary: Genetic Manipulation of Citrus Tristeza. United States Department of Agriculture, gennaio 2004. http://dx.doi.org/10.32747/2004.7586540.bard.

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Citrus is one of the major agricultural crops common to Israel and the United States, important in terms of nutrition, foreign exchange, and employment. The economy of both citrus industries have been chronically plagued by diseases caused by Citrus tristeza virus (CTV). The short term solution until virus-resistant plants can be used is the use of mild strain cross-protection. We are custom designing "ideal" protecting viruses to immunize trees against severe isolates of CTV by purposely inoculating existing endangered trees and new plantings to be propagated as infected (protected) citrus budwood. We crossed the substantial technological hurdles necessary to accomplish this task which included developing an infectious cDNA clone which allows in vitro manipulation of the virus and methods to then infect citrus plants. We created a series of hybrids between decline-inducing and mild CTV strains, tested them in protoplasts, and are amplifying them to inoculate citrus trees for evaluation and mapping of disease determinants. We also extended this developed technology to begin engineering transient expression vectors based on CTV as tools for genetic improvement of tree crops, in this case citrus. Because of the long periods between genetic transformation and the ultimate assay of mature tree characteristics, there is a great need for an effective system that allows the expression or suppression of target genes in fruiting plants. Virus-based vectors will greatly expedite progress in citrus genetic improvement. We characterized several components of the virus that provides necessary information for designing virus-based vectors. We characterized the requirements of the 3 ’-nontranslated replication promoter and two 3 ’-ORF subgenomic (sg) mRNA controller elements. We discovered a novel type of 5’-terminal sgRNAs and characterized the cis-acting control element that also functions as a strong promoter of a 3 ’-sgRNA. We showed that the p23 gene controls negative-stranded RNA synthesis and expression of 3 ’ genes. We identified which genes are required for infection of plants, which are host range determinants, and which are not needed for plant infection. We continued the characterization of native dRNA populations and showed the presence of five different classes including class III dRNAs that consists of infectious and self-replicating molecules and class V dRNAs that contain all of the 3 ’ ORFs, along with class IV dRNAs that retain non-contiguous internal sequences. We have constructed and tested in protoplasts a series of expression vectors that will be described in this proposal.

Kira, Beatriz, Rutendo Tavengerwei e Valary Mumbo. Points à examiner à l'approche des négociations de Phase II de la ZLECAf: enjeux de la politique commerciale numérique dans quatre pays d'Afrique subsaharienne. Digital Pathways at Oxford, marzo 2022. http://dx.doi.org/10.35489/bsg-dp-wp_2022/01.

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Realities such as the COVID-19 pandemic have expedited the move to online operations, highlighting the undeniable fact that the world is continuing to go digital. This emphasises the need for policymakers to regulate in a manner that allows them to harness digital trade benefits while also avoiding associated risk. However, given that digital trade remains unco-ordinated globally, with countries adopting different approaches to policy issues, national regulatory divergence on the matter continues, placing limits on the benefits that countries can obtain from digital trade. Given these disparities, ahead of the African Continental Free Trade Area (AfCFTA) Phase II Negotiations, African countries have been considering the best way to harmonise regulations on issues related to digital trade. To do this effectively, AfCFTA members need to identify where divergencies exist in their domestic regulatory systems. This will allow AfCFTA members to determine where harmonisation is possible, as well as what is needed to achieve such harmonisation. This report analyses the domestic regulations and policies of four focus countries – South Africa, Nigeria, Kenya and Senegal – comparing their regulatory approaches to five policy issues: i) regulation of online transactions; ii) cross-border data flows, data localisation, and personal data protection; iii) access to source code and technology transfer; iv) intermediary liability; and v) customs duties on electronic transmissions. The study highlights where divergencies exist in adopted approaches, indicating the need for the four countries – and AfCFTA members in general – to carefully consider the implications of the divergences, and determine where it is possible and beneficial to harmonise approaches. This was intended to encourage AfCFTA member states to take ownership of these issues and reflect on the reforms needed. As seen in Table 1 below, the study shows that the four countries diverge on most of the five policy issues. There are differences in how all four countries regulate online transactions – that is, e-signatures and online consumer protection. Nigeria was the only country out of the four to recognise all types of e-signatures as legally equivalent. Kenya and Senegal only recognise specific e-signatures, which are either issued or validated by a recognised institution, while South Africa adopts a mixed approach, where it recognises all e-signatures as legally valid, but provides higher evidentiary weight to certain types of e-signatures. Only South Africa and Senegal have specific regulations relating to online consumer protection, while Nigeria and Kenya do not have any clear rules. With regards to cross border data flows, data localisation, and personal data protection, the study shows that all four focus countries have regulations that consist of elements borrowed from the European Union (EU) General Data Protection Regulation (GDPR). In particular, this was regarding the need for the data subject's consent, and also the adequacy requirement. Interestingly, the study also shows that South Africa, Kenya and Nigeria also adopt data localisation measures, although at different levels of strictness. South Africa’s data localisation laws are mostly imposed on data that is considered critical – which is then required to be processed within South African borders – while Nigeria requires all data to be processed and stored locally, using local servers. Kenya imposes data localisation measures that are mostly linked to its priority for data privacy. Out of the four focus countries, Senegal is the only country that does not impose any data localisation laws. Although the study shows that all four countries share a position on customs duties on electronic transmissions, it is also interesting to note that none of the four countries currently have domestic regulations or policies on the subject. The report concludes by highlighting that, as the AfCFTA Phase II Negotiations aim to arrive at harmonisation and to improve intra-African trade and international trade, AfCFTA members should reflect on their national policies and domestic regulations to determine where harmonisation is needed, and whether AfCFTA is the right platform for achieving this efficiently.

Joel, Daniel M., Steven J. Knapp e Yaakov Tadmor. Genomic Approaches for Understanding Virulence and Resistance in the Sunflower-Orobanche Host-Parasite Interaction. United States Department of Agriculture, agosto 2011. http://dx.doi.org/10.32747/2011.7592655.bard.

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Oroginal Objectives: (i) identify DNA markers linked to the avirulence (Avr) locus and locate the Avr locus through genetic mapping with an inter-race Orobanche cumana population; (ii) develop high-throughput fingerprint DNA markers for genotypingO. cumana races; (iii) identify nucleotide binding domain leucine rich repeat (NB-LRR) genes encoding R proteins conferring resistance to O. cumana in sunflower; (iv) increase the resolution of the chromosomal segment harboring Or₅ and related R genes through genetic and physical mapping in previously and newly developed mapping populations of sunflower; and (v) develop high-throughput DNA markers for rapidly and efficiently identifying and transferring sunflower R genes through marker-assisted selection. Revisions made during the course of project: Following changes in O. cumana race distribution in Israel, the newly arrived virulent race H was chosen for further analysis. HA412-HO, which was primarily chosen as a susceptible sunflower cultivar, was more resistant to the new parasite populations than var. Shemesh, thus we shifted sunflower research into analyzing the resistance of HA412-HO. We exceeded the deliverables for Objectives #3-5 by securing funding for complete physical and high-density genetic mapping of the sunflower genome, in addition to producing a complete draft sequence of the sunflower genome. We discovered limited diversity between the parents of the O. cumana population developed for the mapping study. Hence, the developed DNA marker resources were insufficient to support genetic map construction. This objective was beyond the scale and scope of the funding. This objective is challenging enough to be the entire focus of follow up studies. Background to the topic: O. cumana, an obligate parasitic weed, is one of the most economically important and damaging diseases of sunflower, causes significant yield losses in susceptible genotypes, and threatens production in Israel and many other countries. Breeding for resistance has been crucial for protecting sunflower from O. cumana, and problematic because new races of the pathogen continually emerge, necessitating discovery and deployment of new R genes. The process is challenging because of the uncertainty in identifying races in a genetically diverse parasite. Major conclusions, solutions, achievements: We developed a small collection of SSR markers for genetic mapping in O. cumana and completed a diversity study to lay the ground for objective #1. Because DNA sequencing and SNPgenotyping technology dramatically advanced during the course of the study, we recommend shifting future work to SNP discovery and mapping using array-based approaches, instead of SSR markers. We completed a pilot study using a 96-SNP array, but it was not large enough to support genetic mapping in O.cumana. The development of further SNPs was beyond the scope of the grant. However, the collection of SSR markers was ideal for genetic diversity analysis, which indicated that O. cumanapopulations in Israel considerably differ frompopulations in other Mediterranean countries. We supplied physical and genetic mapping resources for identifying R-genes in sunflower responsible for resistance to O. cumana. Several thousand mapped SNP markers and a complete draft of the sunflower genome sequence are powerful tools for identifying additional candidate genes and understanding the genomic architecture of O. cumana-resistanceanddisease-resistance genes. Implications: The OrobancheSSR markers have utility in sunflower breeding and genetics programs, as well as a tool for understanding the heterogeneity of races in the field and for geographically mapping of pathotypes.The segregating populations of both Orobanche and sunflower hybrids are now available for QTL analyses.