Letteratura scientifica selezionata sul tema "Spectroscopie HAXPES"
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Articoli di riviste sul tema "Spectroscopie HAXPES"
Rao, P. N., U. K. Goutam, Prabhat Kumar, Mukul Gupta, Tapas Ganguli e S. K. Rai. "Depth-resolved compositional analysis of W/B4C multilayers using resonant soft X-ray reflectivity". Journal of Synchrotron Radiation 26, n. 3 (5 aprile 2019): 793–800. http://dx.doi.org/10.1107/s1600577519002339.
Testo completoEgiza, Mohamed, Hiroshi Naragino, Aki Tominaga, Kenji Hanada, Kazutaka Kamitani, Takeharu Sugiyama, Eiji Ikenaga et al. "Effects of Air Exposure on Hard and Soft X-ray Photoemission Spectra of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films". Coatings 8, n. 10 (9 ottobre 2018): 359. http://dx.doi.org/10.3390/coatings8100359.
Testo completoRuwisch, Kevin, Tobias Pohlmann, Florian Bertram, Christoph Schlüter, Andrei Gloskovskii, Karsten Küpper e Joachim Wollschläger. "Real-Time Monitoring the Growth of Epitaxial CoxFe3−xO4 Ultrathin Films on Nb-Doped SrTiO3(001) via Reactive Molecular Beam Epitaxy by Means of Operando HAXPES". Materials 15, n. 7 (23 marzo 2022): 2377. http://dx.doi.org/10.3390/ma15072377.
Testo completoChen, Min, Han Zhou, Benedikt P. Klein, Malte Zugermeier, Claudio K. Krug, Hans-Jörg Drescher, Mihaela Gorgoi, Martin Schmid e J. Michael Gottfried. "Formation of an interphase layer during deposition of cobalt onto tetraphenylporphyrin: a hard X-ray photoelectron spectroscopy (HAXPES) study". Physical Chemistry Chemical Physics 18, n. 44 (2016): 30643–51. http://dx.doi.org/10.1039/c6cp05894a.
Testo completoRueff, J. P., J. M. Ablett, D. Céolin, D. Prieur, Th Moreno, V. Balédent, B. Lassalle-Kaiser, J. E. Rault, M. Simon e A. Shukla. "The GALAXIES beamline at the SOLEIL synchrotron: inelastic X-ray scattering and photoelectron spectroscopy in the hard X-ray range". Journal of Synchrotron Radiation 22, n. 1 (1 gennaio 2015): 175–79. http://dx.doi.org/10.1107/s160057751402102x.
Testo completoYagoub, Mubarak Y. A., Hendrik C. Swart e Elizabeth Coetsee. "Bulk and surface chemical compositions and microstructure properties of CaF2:Y3+ material". Journal of Vacuum Science & Technology B 41, n. 1 (gennaio 2023): 014001. http://dx.doi.org/10.1116/6.0002279.
Testo completoCant, David J. H., Benjamen P. Reed, Ben F. Spencer, Wendy R. Flavell e Alexander G. Shard. "Magic angle HAXPES". Journal of Electron Spectroscopy and Related Phenomena 264 (aprile 2023): 147311. http://dx.doi.org/10.1016/j.elspec.2023.147311.
Testo completoTakagi, Yasumasa, Heng Wang, Yohei Uemura, Takahiro Nakamura, Liwei Yu, Oki Sekizawa, Tomoya Uruga et al. "In situ study of oxidation states of platinum nanoparticles on a polymer electrolyte fuel cell electrode by near ambient pressure hard X-ray photoelectron spectroscopy". Physical Chemistry Chemical Physics 19, n. 8 (2017): 6013–21. http://dx.doi.org/10.1039/c6cp06634h.
Testo completoSato, Shunsuke, Keita Kataoka, Ryosuke Jinnouchi, Naoko Takahashi, Keita Sekizawa, Kousuke Kitazumi, Eiji Ikenaga, Ryoji Asahi e Takeshi Morikawa. "Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy". Physical Chemistry Chemical Physics 20, n. 16 (2018): 11342–46. http://dx.doi.org/10.1039/c8cp00551f.
Testo completoSiegbahn, Kai. "Preface to hard X-ray photo electron spectroscopy (HAXPES)". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 547, n. 1 (luglio 2005): 1–7. http://dx.doi.org/10.1016/j.nima.2005.05.007.
Testo completoTesi sul tema "Spectroscopie HAXPES"
Kazar, Mendes Munique. "X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs". Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS285/document.
Testo completoConducting bridging resistive random accessmemories (CBRAMs) are one option currently investigated for the next generation of non volatile memories. Data storage is based on switching the resistivity between high (HRS) and low (LRS) resistance states. Under electrical bias,a conductive path is assumed to be created by ions diffusion from the active electrode into the solid electrolyte. Recently, special attention has been drawn to devices containing an elemental semiconductor such as tellurium, operating with reduced currents and less retention failures. In these subquantum CBRAM cells, the filament is thought to contain tellurium , yielding a 1-atomconductance (G₁atom) significantly reduced compared to standard CBRAMs and thus allowing low power operation. In this thesis, we use X-rayphotoelectron spectroscopy (XPS) to learn about electrochemical reactions involved in the switching mechanism of Al₂O₃ based CBRAMswith ZrTe and TiTe alloys as active electrode. Two methods are used: i) non-destructive Hard X-ray photoelectron spectroscopy (HAXPES) to investigate the critical interfaces between the electrolyte (Al₂O₃) and the top and bottom electrodes and ii) Gas Cluster Ion Beams (GCIB), a sputtering technique that leads to lower structure degradation, combined with XPS depth profiling to evaluate chemical depth distributions. To FSIMS measurements are also performed to get complementary in-depth chemical information.The aim of this thesis is to clarify the driving mechanism and understand the chemical changes at both interfaces involved in the forming process under positive and negative polarization as well as the mechanism of the reset operation. For that,we performed a comparison between as-grown state, i.e. the pristine device with a formed state,i.e. the sample after the first transition between HRS and LRS, and reset state, i.e. the sample after the first transition between LRS and HRS.Conducting bridging resistive random access memories (CBRAMs) are one option currently investigated for the next generation of non-volatile memories. Data storage is based on switching the resistivity between high (HRS) and low (LRS) resistance states. Under electrical bias,a conductive path is assumed to be created byions diffusion from the active electrode into the solid electrolyte. Recently, special attention has been drawn to devices containing an elemental semiconductor such as tellurium, operating with reduced currents and less retention failures. In these subquantum CBRAM cells, the filament is thought to contain tellurium , yielding a 1-atom conductance (G₁atom) significantly reduced compared to standard CBRAMs and thus allowing low power operation. In this thesis, we use X-ray photoelectron spectroscopy (XPS) to learn about electrochemical reactions involved in the switching mechanism of Al₂O₃ based CBRAMs with ZrTe and TiTe alloys as active electrode. Twomethods are used: i) non-destructive Hard X-rayphotoelectron spectroscopy (HAXPES) toinvestigate the critical interfaces between the electrolyte (Al₂O₃) and the top and bottom electrodes and ii) Gas Cluster Ion Beams (GCIB), a sputtering technique that leads to lower structure degradation, combined with XPS depth profiling to evaluate chemical depth distributions. To FSIMS measurements are also performed to get complementary in-depth chemical information.The aim of this thesis is to clarify the driving mechanism and understand the chemical changes at both interfaces involved in the forming process under positive and negative polarization as well as the mechanism of the reset operation. For that,we performed a comparison between as-grown state, i.e. the pristine device with a formed state,i.e. the sample after the first transition between HRS and LRS, and reset state, i.e. the sample after the first transition between LRS and HRS
Bure, Taylor Rose. "Inelastic background analysis from lab-based HAXPES spectra for critical interfaces in nano-electronics". Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2023. http://www.theses.fr/2023UCFA0125.
Testo completoThis work uses lab-scale hard X-ray photoelectron spectroscopy (HAXPES) in the perspective of inelastic background analysis (IBA) for applications in the metrology field in order to provide thickness measurements of technologically relevant materials in memory and power devices. We seek to meet the need for a method adapted for inline processes and routine analysis. The samples presented in this work were fabricated by pre-industrial processes and are representative of real device technology with concerns like complex interdiffusion properties and deeply buried active layers and interfaces. In this work, we evaluate the HAXPES-IBA technique executed with QUASES software by studying the free parameters, the operator contributions, and uncertainty in the depth distribution. We present a self-contained analysis by accessing high energy photoelectron spectra of elements from each sample layer recorded with a novel lab-scale HAXPES instrument (PHI Quantes) fitted with a Cr Kα photon source (hv = 5414.72 eV). First, highly controlled reference samples of known thicknesses (Al2O3 and HfO2 thin films) were studied to confirm the accuracy of the IBA method through validation against highly quantitative reference techniques. HAXPES-IBA thickness determinations of bilayer samples with a thick overlayer up to 25 nm and a buried layer of approximately 2.5 nm were found to be in excellent agreement with results from X-ray reflectivity (XRR) with fitting uncertainty of the IBA solution in the sub-nanometer range. The need to select the appropriate HAXPES excitation energy depending on total film thickness was demonstrated thanks to complimentary HAXPES measurements recorded with Ga Kα radiation (hv = 9251.74 eV). Finally, we apply the method to realistic technological samples. In the first study, we present thickness results from a sample class of Al2O3 films deposited over GaN by atomic layer deposition (ALD), representative of a recessed gate MOS channel High Electron Mobility Transistor (HEMT). Quantitative secondary ion mass spectrometry (SIMS) measurements compliment the IBA technique by confirming need for reference spectrum. In the second study, the HAXPES-IBA method is combined with ion sputtering to confirm the Ti/TiN overlayer thickness in a Ti/HfO2-based structure used for oxide resistive random access memory (OxRRAM) technology. We provide a critical summary of advances to reach for an accurate and reliable HAXPES-IBA method fully-integrated into inline process control
Risterucci, Paul. "Coupling of electron spectroscopies for high resolution elemental depth distribution profiles in complex architectures of functional materials". Thesis, Ecully, Ecole centrale de Lyon, 2015. http://www.theses.fr/2015ECDL0047/document.
Testo completoThis thesis tackles the challenge of probing in a non-destructive way deeply buried interfaces in multilayer stacks used in technologically-relevant devices with an innovative photoemission method based on Hard X-ray PhotoElectron Spectroscopy (HAXPES) and inelastic background analysis. In this thesis, a numerical procedure has been implemented to quantify the matching between a HAXPES measured inelastic background and a simulated inelastic background that is representative of a given depth distribution of the chemical elements. The method allows retrieving depth distributions at large depths via a semi-automated procedure. First, this method has been tested by studying an ultra-thin layer of lanthanum buried at depth >50 nm in a high-k metal gate sample. The influence of the parameters involved in the analysis is studied unraveling the primary importance of the inelastic scattering cross section. The combination of HAXPES with inelastic background analysis using this novel method maximizes the probing depth to an unprecedented level, allowing to probe the sample up to 65 nm below the surface with a high sensitivity to a nm-thick layer. Second, the previously-checked inelastic background analysis is combined with that of high resolution core-level spectra in the case of the source part of a high electron mobility transistor. The two analyses are complementary as they allow retrieving the elemental depth distribution and the chemical state, respectively. The result gives a complete picture of the elemental intermixing within the sample when it is annealed at various temperatures
Denne afhandling omhandler problemet med at probe dybt begravede grænseflader i multilags stacks, som bruges i teknologisk relevante devices, med en innovativ fotoemissions metode, der er baseret på Hard X-ray PhotoElectron Spectroscopy (HAXPES) og analyse af den uelastiske baggrund. I afhandlingen er en numerisk procedure blevet implementeret til at kvantificere forskellen mellem en HAXPES målt uelastisk baggrund og en modelleret baggrund, som svarer til en given dybdefordeling af atomerne. Metoden muliggør, med en halv-automatisk procedure, at bestemme dybdefordelingen i store dybder. Metoden er først blevet testet ved at studere et ultra-tyndt lag af lanthan, som er begravet i en dybde > 50 nm i en high-k-metal-gate prøve. Indflydelsen af parametrene der ingår i analysen er blevet studeret for at opklare den primære betydning af det anvendte uelastiske spredningstværsnit. Kombinationen af HAXPES med analyse af den uelastiske baggrund og brug af den nye numeriske metode giver en hidtil uset probe-dybde, som giver mulighed for at probe den atomare sammens ætning i op til 65 nm dybde under overfladen og med høj følsomhed af et kun nm tykt lag. Dernæst er den uelastiske baggrundsanalyse blevet kombineret med højopløst core-level spektroskopi for at studere de aktive dele i en høj-elektronmobilitets transistor. De to analyser er komplementære, idet de henholdsvis bestemmer den atomare fordeling og atomernes kemiske bindingstilstand. Resultatet giver et fuldstændigt billede af atomernes omfordeling i prøven når denne opvarmes til forskellige temperaturer
Fantin, Roberto. "Etude des matériaux d'électrode positive pour accumulateurs lithium-ions par spectroscopie de photoémission à rayonnement X mous et durs expérimentale et théorique". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALI027.
Testo completoThis thesis has the objective to understand the redox compensation mechanism of positive electrode materials sustaining lithium-ion battery (dis-)charge processes. The study is conducted for LiNiO2, Li2MnO3, and LiCoO2, archetype materials for the state-of-art high-energy positive electrode materials Li[NixMnyCoz]O2. Despite these materials having been studied for decades, the link between electronic correlations and redox mechanism during (de-)lithiation is not well understood. In particular, the role of transition metals and oxygen ions in the redox process is yet to be clarified and resolved in-depth from the surface towards the bulk.To this goal, we establish a novel methodology based on laboratory- and synchrotron-based soft and hard X-ray photoemission spectroscopy (XPS, HAXPES) to probe qualitatively and quantitatively the electronic structure from the extreme surface down to ~20-30 nm. This allows us to follow the evolution of positive solid electrode-electrolyte interphase, surface electrode material degradation, and bulk electronic structure upon cycling. Notably, the thickness and chemical structure of the surface degradation layer depends on the increase of oxygen valence, related to its interaction with the transition metal. Subsequently, we investigate the evolution of the bulk electronic structure upon cycling by analyzing the transition metal 2p core-level HAXPES spectra with electronic structure simulations based on density functional (DFT) and cluster model (CMT) theories. We evaluate the role of transition metals and oxygen in the redox process by quantifying the 3d-3d Coulomb repulsion and oxygen ligand-metal 2p-3d charge transfer (Δ). The spectra analysis for LiCoO2 and LiNiO2 highlights a decrease of Δ towards the negative charge transfer regime indicating a leading role of the oxygen ions in the charge compensation mechanism. The delithiation process is therefore controlled by the local electron transfer from oxygen 2p orbitals to limit charge accumulation in the metal 3d orbitals
Zborowski, Charlotte. "Characterization of deeply buried interfaces by Hard X-ray Photoelectron Spectroscopy". Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEC025/document.
Testo completoThis thesis aims at improving the inelastic background analysis method in order to apply it to technologically relevant samples. Actually, these improvements are utterly needed as they concern criteria of accuracy and time saving particularly for analysis of devices presenting deeply buried layers with different materials. For this purpose, the interest of the inelastic background analysis method is at its best when combined with hard X-ray photoelectron spectroscopy (HAXPES) because HAXPES allows to probe deeper in the sample than with conventional X-ray photoelectron spectroscopy (XPS). The present work deals with technologically relevant samples, mainly the high-electron mobility transistor (HEMT), at some crucial steps of their fabrication process as annealing. Actually, it is very important that these analyses shall be performed non-destructively in order to preserve the buried interfaces. These are often the location of complex phenomena that are critical for device performances and a better understanding is often a prerequisite for any improvement. In this thesis, the in-depth diffusion phenomena are studied with the inelastic background analysis technique (using the QUASES software) combined with HAXPES for depth up to 60 nm. The depth distribution results are determined with deviations from TEM measurements smaller than a typical value of 5%. The choice of the input parameters of the method is discussed over a large range of samples and simple rules are derived which make the actual analysis easier and faster to perform. Finally, it was shown that spectromicroscopy obtained with the HAXPEEM technique can provide spectra at each pixel usable for inelastic background analysis. This is a proof of principle that it can provide a 3D mapping of the elemental depth distribution with a nondestructive method
Denne afhandling har til formål at forbedre den uelastiske baggrundsanalysemetode til anvendelser i den til teknologiske industri. Faktisk er disse forbedringer absolut nødvendige, for at opnå nøjagtighed og tidsbesparelse, især for analyse af prøver med dybt begravede lag af forskellige materialer. Til det formål er interessen for den uelastiske baggrundsanalysemetode bedst i kombination med hård røntgenfotoelektron-spektroskopi (HAXPES), fordi HAXPES gør det muligt at probe dybere i prøven end med konventionel røntgenfotoelektron-spektroskopi (XPS). Dette arbejde beskæftiger sig med teknologisk relevante prøver, hovedsagelig høj-elektron mobilitetstransistor (HEMT), på nogle afgørende trin i deres fremstillingsproces som fx annealing. Faktisk er det meget vigtigt, at disse analyser udføres på en ikke-destruktiv måde for at bevare de begravede grænseflader. Det er ofte her de komplekse fysiske fænomener opstår, som er kritiske for fuktionaliteten, og en bedre forståelse af grænsefladerne er ofte en forudsætning for at kunne forbedre denne. I denne afhandling studeres de dybdegående diffusionsfænomener med den uelastiske baggrundsanalyse teknik (ved hjælp af QUASES software) kombineret med HAXPES for dybder op til 60 nm. Dybdestributionsresultaterne har afvigelser fra TEM-målinger mindre end en typisk værdi på 5%. Valget af input parametre for metoden er diskuteret på bagground af et stort udvalg af prøver samt omfattende simuleringer og enkle regler er udledt, hvilket gør den praktiske analyse nemmere og hurtigere at udføre. Endelig blev det vist, at spektromikroskopi opnået med HAXPEEM-teknikken kan tilvejebringe spektre ved hver enkelt pixel som kan anvendes til uelastisk baggrundsanalyse. Dette viser at i princippet kan en 3D-billeddannelse af den elementære dybdefordeling bestemmes ikke destruktivt
Fredriksson, Wendy. "Depth Profiling of the Passive Layer on Stainless Steel using Photoelectron Spectroscopy". Doctoral thesis, Uppsala universitet, Institutionen för kemi - Ångström, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-179399.
Testo completoKaufmann, Eriksson Susanna. "Interfaces in Dye-Sensitized Solar Cells Studied with Photoelectron Spectroscopy at Elevated Pressures". Doctoral thesis, Uppsala universitet, Fysikalisk kemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-230855.
Testo completoLindblad, Rebecka. "Electronic Structures and Energy Level Alignment in Mesoscopic Solar Cells : A Hard and Soft X-ray Photoelectron Spectroscopy Study". Doctoral thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-221450.
Testo completoSundberg, Jill. "Triboactive Low-Friction Coatings Based on Sulfides and Carbides". Doctoral thesis, Uppsala universitet, Oorganisk kemi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-230989.
Testo completoPincelli, T. "PROBING ELECTRON CORRELATION DYNAMICS: A MULTI-TECHNIQUE STUDY APPLIED TO THE HALF-METALLIC OXIDE LA1-XSRXMNO3". Doctoral thesis, Università degli Studi di Milano, 2017. http://hdl.handle.net/2434/543731.
Testo completoLibri sul tema "Spectroscopie HAXPES"
Woicik, Joseph, a cura di. Hard X-ray Photoelectron Spectroscopy (HAXPES). Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-24043-5.
Testo completoWoicik, Joseph. Hard X-Ray Photoelectron Spectroscopy (HAXPES). Springer London, Limited, 2015.
Cerca il testo completoCapitoli di libri sul tema "Spectroscopie HAXPES"
Svensson, Svante, Evelyn Sokolowski e Nils Mårtensson. "The First Development of Photoelectron Spectroscopy and Its Relation to HAXPES". In Springer Series in Surface Sciences, 35–42. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24043-5_2.
Testo completoAtti di convegni sul tema "Spectroscopie HAXPES"
Gibson, Joshua, Marco Siniscalchi, Sudarshan Narayanan, Trevor Binford, Jack Swallow, Pravin Didwal, Leanne Jones et al. "Operando HAXPES probing solid electrolyte interphase growth through ultra-thin film electrodes". In Photoemission Spectroscopy for Materials Analysis II, a cura di Rosa Arrigo, Robert Palgrave e Philip D. King. SPIE, 2023. http://dx.doi.org/10.1117/12.2656826.
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