Letteratura scientifica selezionata sul tema "Spacers gate"
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Articoli di riviste sul tema "Spacers gate"
Weng, Chun Jen. "Etching Effects of Nanotechnology Fabrication on CMOS Transistor Gate Wafer Manufacturing Process Integration". Advanced Materials Research 154-155 (ottobre 2010): 938–41. http://dx.doi.org/10.4028/www.scientific.net/amr.154-155.938.
Testo completoWeng, Chun Jen. "Etching Process Effects of CMOS Transistor Gate Manufacturing Nanotechnology Fabrication Integration". Applied Mechanics and Materials 83 (luglio 2011): 91–96. http://dx.doi.org/10.4028/www.scientific.net/amm.83.91.
Testo completoWylie, Ian W., e N. Garry Tarr. "A new approach to gate/n− overlapped lightly doped drain structures: added gate after implantation of n− (AGAIN)". Canadian Journal of Physics 69, n. 3-4 (1 marzo 1991): 174–76. http://dx.doi.org/10.1139/p91-027.
Testo completoKumar, Padakanti Kiran, Bukya Balaji e Karumuri Srinivasa Rao. "Design and analysis of asymmetrical low-k source side spacer halo doped nanowire metal oxide semiconductor field effect transistor". International Journal of Electrical and Computer Engineering (IJECE) 13, n. 3 (1 giugno 2023): 3519. http://dx.doi.org/10.11591/ijece.v13i3.pp3519-3529.
Testo completoWostyn, Kurt, Karine Kenis, Hans Mertens, Adrian Vaisman Chasin, Andriy Hikavyy, Frank Holsteyns e Naoto Horiguchi. "Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer". Solid State Phenomena 282 (agosto 2018): 126–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.126.
Testo completoGuo, Mengxue, Weifeng Lü, Ziqiang Xie, Mengjie Zhao, Weijie Wei e Ying Han. "Effects of Symmetric and Asymmetric Double-Layer Spacers on a Negative-Capacitance Nanosheet Field-Effect Transistor". Journal of Nanoelectronics and Optoelectronics 17, n. 6 (1 giugno 2022): 873–82. http://dx.doi.org/10.1166/jno.2022.3266.
Testo completoDurfee, Curtis, Ivo Otto IV, Subhadeep Kal, Shanti Pancharatnam, Matthew Flaugh, Toshiki Kanaki, Matthew Rednor et al. "Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors". ECS Transactions 112, n. 1 (29 settembre 2023): 45–52. http://dx.doi.org/10.1149/11201.0045ecst.
Testo completoConvertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund e Lukas Czornomaz. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities". Materials 12, n. 1 (27 dicembre 2018): 87. http://dx.doi.org/10.3390/ma12010087.
Testo completoLi, Junjie, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du et al. "Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors". Nanomaterials 10, n. 4 (20 aprile 2020): 793. http://dx.doi.org/10.3390/nano10040793.
Testo completoBacquié, Valentin, Aurélien Tavernier, François Boulard, Olivier Pollet e Nicolas Possémé. "Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices". Journal of Vacuum Science & Technology A 39, n. 3 (maggio 2021): 033005. http://dx.doi.org/10.1116/6.0000871.
Testo completoTesi sul tema "Spacers gate"
Jaffal, Moustapha. "Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.
Testo completoOver the past decades, the semiconductor industry has witnessed a remarkable increase in the performance of integrated circuits. Photolithography, a crucial process in the manufacturing of integrated circuits, requires an increasingly complex sequence of steps, including various successive treatments such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). Beyond their complexity and the associated cost escalation, patterning steps can result in alignment errors, known as Edge Placement Error (EPE), which can impact the proper functioning of devices such as transistors. The objective of this thesis is to develop a novel topographical selective deposition (TSD) process using a "Deposition/Etching" super-cycle approach. The advantages of this TSD process include the lateral and direct formation of spacers on the sidewalls of 3D architectures, such as CMOS transistor gates at the nanoscale. This innovative manufacturing approach paves the way for reducing the number of steps and equipment required in the fabrication process, minimizing the potential EPE introduced by photolithography. Consequently, it offers the opportunity to reduce the consumption of horizontal surfaces in 3D transistors, a critical factor in the integration of advanced technological nodes during spacer creation. This work offers a proof of concept of the TSD deposition, using a super-cycle approach that alternates between a conformal deposition process by PE(ALD) and various anisotropic plasma etching processes in the same tool. This approach leverages the physical and chemical properties of plasma interactions with materials
Bertram, David. "Game-Space". Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/31140.
Testo completoMaster of Architecture
Calderon, Ana C. M. A. "Understanding game semantics through coherence spaces". Thesis, University of Bath, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580675.
Testo completoBalog, Michael Rosen Warren A. "The automated compilation of comprehensive hardware design search spaces of algorithmic-based implementations for FPGA design exploration /". Philadelphia, Pa. : Drexel University, 2007. http://hdl.handle.net/1860/1770.
Testo completoBendele, Rigby L. "NEGOTIATING MASCULINITY IN TABLETOP ROLEPLAYING GAME SPACES". VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/5805.
Testo completoMeldgaard, Betty Li. "Perception, action, and game space". Universität Potsdam, 2008. http://opus.kobv.de/ubp/volltexte/2008/2462/.
Testo completoBrown, Eric L. "A quadratic partial assignment and packing model and algorithm for the airline gate assignment problem". Thesis, This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-07212009-040541/.
Testo completoGingold, Chaim. "Miniature gardens and magic crayons : games, spaces and worlds". Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/17671.
Testo completoEbert, Dean A. "Design and development of a configurable fault-tolerant processor (CFTP) for space applications". Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Jun%5FEbert.pdf.
Testo completoThesis advisor(s): Herschel H. Loomis, Alan A. Ross. Includes bibliographical references (p. 219-224). Also available online.
Humberd, Caleb J. "A compression algorithm for field programmable gate arrays in the space environment". Monterey, California. Naval Postgraduate School, 2011. http://hdl.handle.net/10945/10623.
Testo completoLibri sul tema "Spacers gate"
Linda, Evans, a cura di. Hell's gate. Riverdale, NY: Baen, 2006.
Cerca il testo completoMarroquin-Burr, Kristina. Learn to draw Angry Birds space. [Irvine, Calif.]: Walter Foster Pub., Inc., 2013.
Cerca il testo completoChampion, Jill. The official guide to Roger Wilco's space adventures. 2a ed. Greensboro, N.C: Compute Books, 1993.
Cerca il testo completoC, Leinecker Richard, a cura di. The official guide to Roger Wilco's space adventures. Greensboro, N.C: Compute Books, 1991.
Cerca il testo completoJohn, Peel. Where in space is Carmen Sandiego? Racine, Wis: Western Pub. Co., 1993.
Cerca il testo completoBarham, Pamela. Winning space: Game strategies for netball. [U.K.]: Network Coaching International, 1994.
Cerca il testo completo1959-, Maas Winy, MVRDV (Firm), Delft School of Design, Berlage Instituut, Massachusetts Institute of Technology e cThrough (Firm), a cura di. Space fighter: The evolutionary city (game:). Barcelona: Actar, 2007.
Cerca il testo completoKahn, Charles M. The good, the bad, and the ugly: Coalition proof equilibrium in games with infinite strategy spaces. [Urbana, Ill.]: College of Commerce and Business Administration, University of Illinois at Urbana-Champaign, 1989.
Cerca il testo completoErikson, Steven. Deadhouse gates. New York: Tor, 2005.
Cerca il testo completoErikson, Steven. Deadhouse Gates. London: Transworld, 2009.
Cerca il testo completoCapitoli di libri sul tema "Spacers gate"
Jungkeit, Steven R. "The Infinite Gaze". In Spaces of Modern Theology, 41–81. New York: Palgrave Macmillan US, 2012. http://dx.doi.org/10.1057/9781137269027_2.
Testo completoKaushik, Brajesh Kumar, Sudeb Dasgupta e Pankaj Kumar Pal. "Tri-Gate FinFET Technology and Its Advancement". In Spacer Engineered FinFET Architectures, 11–36. Boca Raton : Taylor & Francis, CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315191089-2.
Testo completoCaracciolo, Marco. "Game Space". In On Soulsring Worlds, 26–41. London: Routledge, 2024. http://dx.doi.org/10.4324/9781032684024-3.
Testo completoRiviere, Alex. "Space". In Game Audio Mixing, 110–20. London: Focal Press, 2023. http://dx.doi.org/10.4324/9781003351146-10.
Testo completoSanliturk, Cagri. "Game of being state". In Civic Spaces and Desire, 68–81. New York : Routledge, 2019.: Routledge, 2019. http://dx.doi.org/10.4324/9781351184137-5.
Testo completoYoung, Anthony. "Game Changer: SpaceX". In The Twenty-First Century Commercial Space Imperative, 15–28. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18929-1_2.
Testo completoEspinola-Arredondo, Ana, e Felix Muñoz-Garcia. "Nash Equilibria in Games with Continuous Action Spaces". In Game Theory, 77–103. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-37574-3_4.
Testo completoLeeney, Cathy, e Deirdre McFeely. "Social Class, Space, and Containment in 1950s Ireland". In The Golden Thread, 233–56. Liverpool University Press, 2021. http://dx.doi.org/10.3828/liverpool/9781800859463.003.0018.
Testo completo"Video/Game". In Architectonics of Game Spaces, 71–84. transcript-Verlag, 2019. http://dx.doi.org/10.14361/9783839448021-005.
Testo completoBinotto, Johannes. "Video/Game". In Architectonics of Game Spaces, 71–84. transcript Verlag, 2019. http://dx.doi.org/10.1515/9783839448021-005.
Testo completoAtti di convegni sul tema "Spacers gate"
Dhiman, Gaurav, e Rajeev Pourush. "Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers". In 2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3). IEEE, 2020. http://dx.doi.org/10.1109/iconc345789.2020.9117425.
Testo completoKola, Sekhar Reddy, Yiming Li- e Narasimhulu Thoti. "Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers". In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2020. http://dx.doi.org/10.23919/sispad49475.2020.9241603.
Testo completoSachid, Angada B., Roswald Francis, Maryam Shojaei Baghini, Dinesh K. Sharma, Karl-Heinz Bach, Reinhard Mahnkopf e V. Ramgopal Rao. "Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?" In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796790.
Testo completoMalviya, Abhishek Kumar, e R. K. Chauhan. "Optimizing performance of dual metal gate modified source FDSOI using symmetric and asymmetric oxide spacers". In 2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT). IEEE, 2017. http://dx.doi.org/10.1109/icetcct.2017.8280327.
Testo completoMiyashita, T., K. Ookoshi, A. Hatada, K. Ikeda, Y. S. Kim, M. Nishikawa, T. Sakoda, K. Hosaka e H. Kurata. "Design and Optimization of Gate Sidewall Spacers to Achieve 45nm Ground Rule for High-performance Applications". In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.b-5-1.
Testo completoGong, Jun-Wei, Yeh-Chang Fang, Ta-Yung Wang, Jia-Rui Hu, Chung-I. Chang, Shih-Jung Lee e Jon Opsal. "Thickness and Topography of Dielectric Dual-Sidewall Spacers on Metal Gate of DRAM Extracted by Spectroscopic Ellipsometry". In 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference. IEEE, 2007. http://dx.doi.org/10.1109/asmc.2007.375115.
Testo completoYang, Z. Y., Y. A. Huang, H. C. Lin, P. W. Li, K. M. Chen e G. W. Huang. "Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications". In 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421455.
Testo completoYou, W. X., e P. Su. "Investigation of Gate-Length Dependence of Memory Window for 2D Ferroelectric-FET NVMs Considering the Impact of Spacers". In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.m-4-04.
Testo completoKaur, Prabhjot, Sandeep Singh Gill e Navneet Kaur. "Performance Analysis of Junction Less Accumulation Mode (JAM) Bulk FinFETs Using Dual- K Spacers at 15nm Gate Length". In 2018 2nd International Conference on Trends in Electronics and Informatics (ICOEI). IEEE, 2018. http://dx.doi.org/10.1109/icoei.2018.8553706.
Testo completoHuang, Po-Yen, Xue-Han Chen, Haoran Wang, Shawn S. H. Hsu e Roy K. Y. Wong. "Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers". In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2024. http://dx.doi.org/10.1109/ispsd59661.2024.10579584.
Testo completoRapporti di organizzazioni sul tema "Spacers gate"
Aleksandrov, Pavlo. NEWS GAMES IN THE UKRAINIAN MEDIA SPACE DURING THE FULL-SCALE RUSSIAN INVASION. Ivan Franko National University of Lviv, marzo 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12140.
Testo completoPtsuty, Norbert, Andrea Habeck e Christopher Menke. Shoreline position and coastal topographical change monitoring at Gateway National Recreation Area: 2017–2022 and 2007–2022 trend report. National Park Service, agosto 2023. http://dx.doi.org/10.36967/2299536.
Testo completoDatsyshyn, Chrystyna. FUNCTIONAL PARAMETERS OF ANTHROPONYM AS ONE OF THE VARIETIES OF FACTUAL MATERIAL IN THE MEDIA TEXT. Ivan Franko National University of Lviv, marzo 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12169.
Testo completoKourkoutas, Konstantinos, Begonya Saez, Veronica Junjan, Anders Riel Müller, Wiro Kuipers, Fabio Hernández Palacio, Kristiane Marie Fjær Lindland, Tina-Simone Neset e Sara Malmgren. ECIU Position Paper on Living Labs and Experimentation Spaces: Recommendations and insights about the potential of Living Labs as innovation and learning platforms in the ECIU University. University of Stavanger, aprile 2024. http://dx.doi.org/10.31265/usps.276.
Testo completoDudoit, Alain. The urgency of the first link: Canada’s supply chain at breaking point, a national security issue. CIRANO, luglio 2023. http://dx.doi.org/10.54932/cxwf7311.
Testo completoSlotiuk, Tetiana. CONCEPT OF SOLUTIONS JOURNALISM MODEL: CONNOTION, FUNCTIONS, FEATURES OF FUNCTIONING. Ivan Franko National University of Lviv, marzo 2021. http://dx.doi.org/10.30970/vjo.2021.50.11097.
Testo completoDemchenko, Dmytro. DEMASSIFICATION OF SOCIAL PROCESSES IN THE CONTEXT OF DIGITAL COMMUNICATION (TO THE PROBLEM OF THE DICHOTOMY OF “ELITE-MASS” AS A POLITICAL COMMUNICATION PARADOX). Ivan Franko National University of Lviv, marzo 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12171.
Testo completoLevantovych, Oksana. COVID 19 MEDIA COVERAGE: AN ANALYSIS OF HEORHII POCHEPTSOV’S VIEW. Ivan Franko National University of Lviv, febbraio 2021. http://dx.doi.org/10.30970/vjo.2021.49.11061.
Testo completoYatsymirska, Mariya. SOCIAL EXPRESSION IN MULTIMEDIA TEXTS. Ivan Franko National University of Lviv, febbraio 2021. http://dx.doi.org/10.30970/vjo.2021.49.11072.
Testo completoOpening the gate: A resource to support Victorian schools to activate school grounds and open spaces for community use. VicHealth, settembre 2024. http://dx.doi.org/10.37309/2023.pa1068.
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