Articoli di riviste sul tema "SIMOX"
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Hemment, PLF, KJ Reeson, JA Kilner e SJ Krause. "Simox bibliography". Vacuum 42, n. 5-6 (gennaio 1991): 393–453. http://dx.doi.org/10.1016/0042-207x(91)90062-n.
Testo completoScanlon, P. J., P. L. F. Hemment, K. J. Reeson, A. K. Robinson, J. A. Kilner, R. J. Chater e G. Harbeke. "Oxygen rich SIMOX?" Semiconductor Science and Technology 6, n. 8 (1 agosto 1991): 730–34. http://dx.doi.org/10.1088/0268-1242/6/8/002.
Testo completoMargail, J. "SIMOX material manufacturability". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74, n. 1-2 (aprile 1993): 41–46. http://dx.doi.org/10.1016/0168-583x(93)95011-s.
Testo completoVisitserngtrakul, S. "Multiply faulted defects in high-current oxygen-implanted silicon-on-insulator". Proceedings, annual meeting, Electron Microscopy Society of America 47 (6 agosto 1989): 606–7. http://dx.doi.org/10.1017/s0424820100155001.
Testo completoDavid Theodore, N., Peter Fejes, Mamoru Tomozane e Ming Liaw. "TEM characterization of SiGe heterolayers grown on SIMOX". Proceedings, annual meeting, Electron Microscopy Society of America 49 (agosto 1991): 886–87. http://dx.doi.org/10.1017/s0424820100088749.
Testo completoXue Li, Ying, Xing Zhang, Yan Luo e Yang Yuan Wang. "Photoluminescence spectroscopy of SIMOX". Journal of Non-Crystalline Solids 254, n. 1-3 (settembre 1999): 134–38. http://dx.doi.org/10.1016/s0022-3093(99)00438-x.
Testo completoIzumi, Katsutoshi. "History of SIMOX Material". MRS Bulletin 23, n. 12 (dicembre 1998): 20–24. http://dx.doi.org/10.1557/s088376940002978x.
Testo completoBarklie, R. C. "Defects in SIMOX Structures". Solid State Phenomena 1-2 (gennaio 1991): 203–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.1-2.203.
Testo completoRavindra, N. M., S. Abedrabbo, O. H. Gokce, F. Tong, A. Patel, R. Velagapudi, G. D. Williamson e W. P. Maszara. "Radiative properties of SIMOX". IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 21, n. 3 (1998): 441–49. http://dx.doi.org/10.1109/95.725208.
Testo completoGuerra, M., V. Benveniste, G. Ryding, D. H. Douglas-Hamilton, M. Reed, G. Gagne, A. Armstrong e M. Mack. "Oxygen implanter for simox". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 6, n. 1-2 (gennaio 1985): 63–69. http://dx.doi.org/10.1016/0168-583x(85)90611-1.
Testo completoIzumi, Katsutoshi. "Historical overview of SIMOX". Vacuum 42, n. 5-6 (gennaio 1991): 333–40. http://dx.doi.org/10.1016/0042-207x(91)90050-s.
Testo completoDaniel Chen, CE. "SIMOX devices and circuits". Vacuum 42, n. 5-6 (gennaio 1991): 383–86. http://dx.doi.org/10.1016/0042-207x(91)90058-q.
Testo completoVan Ommen, A. H. "New trends in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, n. 1-4 (marzo 1989): 194–202. http://dx.doi.org/10.1016/0168-583x(89)90770-2.
Testo completoStoemenos, J. "Structural defects in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 112, n. 1-4 (maggio 1996): 206–13. http://dx.doi.org/10.1016/0168-583x(95)01237-0.
Testo completoTan, Yan, Benedict Johnson, Supapan Seraphin e Maria J. Anc. "Defect Dynamics in Simox Structures as a Function of the Annealing Parameters". Microscopy and Microanalysis 6, S2 (agosto 2000): 1086–87. http://dx.doi.org/10.1017/s1431927600037922.
Testo completoFerro, G., N. Planes, V. Papaioannou, D. Chaussende, Y. Monteil, Y. Stoemenos e J. Camassel. "Role of SIMOX defects on the structural properties of β-SiC/SIMOX". Materials Science and Engineering: B 61-62 (luglio 1999): 586–92. http://dx.doi.org/10.1016/s0921-5107(98)00480-2.
Testo completoWilson, T., J. Jiao, S. Seraphin, B. Johnson, M. Anc e B. Cordts. "Effects of Protective Capping on Ultra-Thin SIMOX Structures". Microscopy and Microanalysis 5, S2 (agosto 1999): 744–45. http://dx.doi.org/10.1017/s1431927600017049.
Testo completoWeiss, B. L., G. T. Reed, S. K. Toh, R. A. Soref e F. Namavar. "Optical waveguides in SIMOX structures". IEEE Photonics Technology Letters 3, n. 1 (gennaio 1991): 19–21. http://dx.doi.org/10.1109/68.68035.
Testo completoNakashima, S., e K. Izumi. "Surface morphology of SIMOX wafers". Electronics Letters 25, n. 2 (1989): 154. http://dx.doi.org/10.1049/el:19890112.
Testo completoGeatches, R. M., K. J. Reason, A. J. Griddle, R. P. Webb, P. J. Pearson, P. L. F. Hemment e A. Nejim. "Nondestructive characterization of SIMOX structures". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 84, n. 2 (febbraio 1994): 258–64. http://dx.doi.org/10.1016/0168-583x(94)95766-5.
Testo completoKögler, Reinhard, A. Mücklich, W. Anwand, F. Eichhorn e Wolfgang Skorupa. "Defect Engineering for SIMOX Processing". Solid State Phenomena 131-133 (ottobre 2007): 339–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.339.
Testo completoGiordana, Adriana, R. Glosser, Keith Joyner e Gordon Pollack. "Photoreflectance Studies of SIMOX Materials". Journal of Electronic Materials 20, n. 11 (novembre 1991): 949–58. http://dx.doi.org/10.1007/bf02816038.
Testo completoAllen, Lisa P., Theodore H. Smick e Geoffrey Ryding. "SIMOX Research, development, and manufacturing". Journal of Electronic Materials 25, n. 1 (gennaio 1996): 93–97. http://dx.doi.org/10.1007/bf02666180.
Testo completoGriffin, CJ, e JA Kilner. "The evolution of SIMOX dislocations". Vacuum 42, n. 5-6 (gennaio 1991): 389. http://dx.doi.org/10.1016/0042-207x(91)90060-v.
Testo completoSteigmeier, E. F., G. Harbeke, K. J. Reeson, P. L. F. Hemment e A. K. Robinson. "Nondestructive assessment of SIMOX substrates". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (febbraio 1989): 304–7. http://dx.doi.org/10.1016/0168-583x(89)90191-2.
Testo completoYoshino, A., K. Kasama e M. Sakamoto. "Oxygen-redistribution process in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, n. 1-4 (marzo 1989): 203–6. http://dx.doi.org/10.1016/0168-583x(89)90771-4.
Testo completoLee, June-Dong, Stephen Krause e Peter Roitman. "Formation of stacking-fault tetrahedra in low defect density oxygen-implanted silicon-on-insulator material". Proceedings, annual meeting, Electron Microscopy Society of America 50, n. 2 (agosto 1992): 1402–3. http://dx.doi.org/10.1017/s0424820100131644.
Testo completoOhler, M., S. Köhler e J. Härtwig. "X-ray diffraction moiré topography as a means to reconstruct relative displacement fields in weakly deformed bicrystals". Acta Crystallographica Section A Foundations of Crystallography 55, n. 3 (1 maggio 1999): 423–32. http://dx.doi.org/10.1107/s0108767398010794.
Testo completoRoitman, P., D. S. Simons, Supapan Visitserngtrakul, C. O. Jung e S. J. Krause. "Effect of annealing ambient on the precipitation processes in oxygen-implanted silicon on-insulator material". Proceedings, annual meeting, Electron Microscopy Society of America 48, n. 4 (agosto 1990): 644–45. http://dx.doi.org/10.1017/s0424820100176356.
Testo completoKrause, S. J., C. O. Jung e S. R. Wilson. "Precipitation in silicon-on-insulator material during high- temperature annealing". Proceedings, annual meeting, Electron Microscopy Society of America 45 (agosto 1987): 254–55. http://dx.doi.org/10.1017/s0424820100126172.
Testo completoIikawa, H., M. Nakao e K. Izumi. "Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation". Journal of Materials Research 19, n. 12 (1 dicembre 2004): 3607–13. http://dx.doi.org/10.1557/jmr.2004.0455.
Testo completoNejim, A., P. L. Hemment e J. Stoemenos. "High temperature carbon implantation in SIMOX". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 120, n. 1-4 (dicembre 1996): 129–32. http://dx.doi.org/10.1016/s0168-583x(96)00494-6.
Testo completoLam, H. W. "SIMOX SOI for integrated circuit fabrication". IEEE Circuits and Devices Magazine 3, n. 4 (luglio 1987): 6–11. http://dx.doi.org/10.1109/mcd.1987.6323126.
Testo completoMayo, Santos, Jeremiah R. Lowney, Peter Roitman e Donald B. Novotny. "Persistent photoconductivity in SIMOX film structures". Journal of Applied Physics 68, n. 7 (ottobre 1990): 3456–60. http://dx.doi.org/10.1063/1.346356.
Testo completoVogt, H., G. Burbach, J. Belz e G. Zimmer. "MESFETs in thin silicon on SIMOX". Electronics Letters 25, n. 23 (1989): 1580. http://dx.doi.org/10.1049/el:19891061.
Testo completoBhar, T. N., R. J. Lambert e H. L. Hughes. "Electron trapping in SI implanted SIMOX". Electronics Letters 34, n. 10 (1998): 1026. http://dx.doi.org/10.1049/el:19980626.
Testo completoNayak, D. K., J. C. S. Woo, G. K. Yabiku, K. P. MacWilliams, J. S. Park e K. L. Wang. "High-mobility GeSi PMOS on SIMOX". IEEE Electron Device Letters 14, n. 11 (novembre 1993): 520–22. http://dx.doi.org/10.1109/55.258002.
Testo completoMartin, E., J. Jiménez, A. Pérez-Rodrígues e J. R. Morante. "Raman characterization of SOI-SIMOX structures". Materials Letters 15, n. 1-2 (ottobre 1992): 122–26. http://dx.doi.org/10.1016/0167-577x(92)90026-g.
Testo completoGuerra, M., B. Cordts, T. Smick, R. Dolan, W. Krull, G. Ryding, M. Alles e M. Anc. "Manufacturing technology for 200mm SIMOX Wafers". Microelectronic Engineering 22, n. 1-4 (agosto 1993): 351–54. http://dx.doi.org/10.1016/0167-9317(93)90185-8.
Testo completoAnc, M. J., e W. A. Krull. "Sources of SIMOX buried oxide leakage". Microelectronic Engineering 28, n. 1-4 (giugno 1995): 407–10. http://dx.doi.org/10.1016/0167-9317(95)00085-m.
Testo completoColinge, Jean-Pierre. "The development of CMOS/SIMOX technology". Microelectronic Engineering 28, n. 1-4 (giugno 1995): 423–30. http://dx.doi.org/10.1016/0167-9317(95)00089-q.
Testo completoJeoung, Jun Sik, Benedict Johnson e Suṗapan Seraphin. "Growth of Oxygen Precipitates in Low-Dose Low-Energy Simox". Microscopy and Microanalysis 7, S2 (agosto 2001): 562–63. http://dx.doi.org/10.1017/s1431927600028889.
Testo completoChen, Meng, Yuehui Yu, Xi Wang, Xiang Wang, Jing Chen, Xianghua Liu e Yeming Dong. "Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match". Journal of Materials Research 17, n. 7 (luglio 2002): 1634–43. http://dx.doi.org/10.1557/jmr.2002.0241.
Testo completoGuss, B., S. Seraphin e B. F. Cordts. "TEM Analysis of Defects in Simox Silicon-On-Insulator Material". Microscopy and Microanalysis 3, S2 (agosto 1997): 473–74. http://dx.doi.org/10.1017/s1431927600009259.
Testo completoKrause, Steve, Maria Anc e Peter Roitman. "Evolution and Future Trends of SIMOX Material". MRS Bulletin 23, n. 12 (dicembre 1998): 25–29. http://dx.doi.org/10.1557/s0883769400029791.
Testo completoMiyatake, Hiroshi, Yasuo Yamaguchi, Yoji Mashiko, Tadashi Nishimura e Hiroshi Koyama. "Microstructure of high temperature annealed SIMOX wafer". Applied Surface Science 41-42 (gennaio 1990): 643–46. http://dx.doi.org/10.1016/0169-4332(89)90136-0.
Testo completoRivera, A., A. van Veen, H. Schut, J. M. M. de Nijs e P. Balk. "Interaction of deuterium with SIMOX buried oxide". Microelectronic Engineering 59, n. 1-4 (novembre 2001): 497–501. http://dx.doi.org/10.1016/s0167-9317(01)00664-5.
Testo completoLiu, S. T., e L. P. Allen. "Back channel uniformity of thin SIMOX wafers". IEEE Transactions on Nuclear Science 38, n. 6 (1991): 1271–75. http://dx.doi.org/10.1109/23.124104.
Testo completoJung-Hyeon Park, Hyung-Il Lee, Heung-Sik Tae, Jeung-Soo Huh e Jung-Hee Lee. "Lateral field emission diodes using SIMOX wafer". IEEE Transactions on Electron Devices 44, n. 6 (giugno 1997): 1018–21. http://dx.doi.org/10.1109/16.585560.
Testo completoDouseki, T., S. Shigematsu, J. Yamada, M. Harada, H. Inokawa e T. Tsuchiya. "A 0.5-V MTCMOS/SIMOX logic gate". IEEE Journal of Solid-State Circuits 32, n. 10 (1997): 1604–9. http://dx.doi.org/10.1109/4.634672.
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