Tesi sul tema "SIMOX"
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Yang, Hong. "Microstructural development of simox and simox related materials". Thesis, University of North Texas, 1993. https://digital.library.unt.edu/ark:/67531/metadc798205/.
Testo completoKrska, Jee-Hoon Yap. "SIMOX buried-oxide conduction mechanisms". Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10309.
Testo completoIncludes bibliographical references (leaves 141-149).
by Jee-Hoon Yap Krska.
Ph.D.
Dalponte, Mateus. "Junções rasas em Si e SIMOX". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/7638.
Testo completoOliveira, Roana Melina de. "Dopagem tipo-n em estruturas SIMOX". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2007. http://hdl.handle.net/10183/11793.
Testo completoThe re-crystallization and electrical activation of As (n-type dopant) implanted in SIMOX (Separation by IMplanted OXygen) were studied. Two SIMOX structures with different Si overlayers and buried oxide thicknesses were used. The As+ implantations were performed with energy of 20 keV to doses of 5x1014cm-2 or 2x1015cm-2 in both substrates. A plateau-like profile was achieved in an additional set of SOI samples by triple energy implantation. Rapid thermal and conventional furnace annealing were applied for dopant activation and recovery of the implantation damage. The physical and electrical characterizations were done by RBS (Rutherford Backscattering Spectrometry), TEM (Transmission Electron Microscopy), MEIS (Medium Energy Ion Scattering), sheet resistance measurements and Hall Effect measurements. The results are discussed considering the amorphization depth reached by dopant implantation and the crystal recovery process via thermal treatment and the influence in the electrical activation of the dopants. The completely amorphized samples presented higher values of sheet resistance and lower electrical activation percentage compared with the samples that did not have the complete top Si film amorphized. These results clearly show the need for avoiding total amorphization of the Si film during ion implantation in SIMOX, so that it is possible to achieve good crystal and electrical characteristics after thermal processing.
Yoon, Jung Uk 1971. "SIMOX BOX metrology : using physical and electrical characterization". Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32682.
Testo completoLourenco, Manon d'Assuncao. "Evaluation of SIMOX substrates using photoconductive frequency resolved spectroscopy". Thesis, University of Surrey, 1991. http://epubs.surrey.ac.uk/776189/.
Testo completoYoon, Jung Uk 1971. "Metrology of SIMOX buried oxide and nitride/STI CMP". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50518.
Testo completoIncludes bibliographical references (leaves 149-154).
The increase in demand for faster and more powerful microprocessors in recent years has been the driving force to introduce new materials and processes into semiconductor fabrication facilities. As each fabrication facility tries to maximize its yield, it is mandatory that there exist metrology techniques to characterize both materials and processes. This mandate is the motivation behind this thesis. In this thesis, the metrology of two different systems used in VLSI technology are investigated. The first system is the material, Separation by IMplanted OXygen (SIMOX) buried oxide. SIMOX technology has been studied extensively as a viable alternative to bulk silicon technology in radiation-hard and low-power applications. However, there is still a lack of knowledge on the nature of the defects present in the SIMOX buried oxide and their impact on basic BOX electrical characteristics, such as BOX high-field conduction. In this thesis, greater understanding about the excess-silicon related defects in the buried oxide has been obtained concerning their nature, origin, and impact on the conduction characteristics. Further understanding about the silicon islands in the buried oxide has also been obtained concerning their formation and impact on the high-field conduction characteristics. Finally, a metrological application of the BOX high-field conduction model is demonstrated. The second system is the process, Nitride/Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP). CMP processes have been heralded as a way to planarize films and structures on wafers to a degree which has not been possible before. However, recent studies have shown that the uniformity of CMP processes depends on the layout-pattern density. To address this issue, an oxide CMP model has been developed to show the relationship between layout-pattern density and the polish rate. However, there is an uncertainty as to how this single-material system model can be extended to other material systems and dual-materials systems. In this thesis, the metrology and modeling techniques for oxide CMP are extended to nitride CMP in order to understand the pattern-density and materials dependence for this particular CMP process. In addition, the planarization and uniformity of the two-material system for STI structures is investigated. A model explaining the relationship between a particular STI layout-pattern density and the resulting planarization is developed.
by Jung Uk Yoon.
Ph.D.
Jeoung, Jun Sik. "Structural and electrical characterization of low-dose low-energy SIMOX materials". Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/280614.
Testo completoSeifouri, Mahmood. "Devices for integrated optics produced in GaAs/GaAlAs anf Simox materials". Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.327938.
Testo completoNgwa, Chrisantus Soh. "Electrical characterisation of SIMOX SiOâ†2 for silicon-on-insulator technology". Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263706.
Testo completoGiles, Luis Felipe. "Characterization and control of crystallographic defects in thin film SIMOX materials". Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/844322/.
Testo completoTrui, Bernhard. "Untersuchungen zu CMOS-kompatiblen Bauelementen mit SiGe-Si-Heterostrukturen auf SIMOX-Substraten". [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=960863303.
Testo completoJutarosaga, Tula. "Formation and Electrical Properties of Buried Oxide Layers in Thin Simox Materials". Diss., The University of Arizona, 2006. http://hdl.handle.net/10150/193603.
Testo completoMargail, Jacques. "Réalisation de structures silicium sur isolant (SSI) par implantation d'ions oxygène SIMOX /". Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37607716c.
Testo completoMargail, Jacques. "Réalisation de structures silicium sur isolant (SSI) par implantation d'ions oxygène : simox". Grenoble INPG, 1987. http://www.theses.fr/1987INPG0028.
Testo completoOuisse, Thierry. "Modèles physiques et analyse du fonctionnement des composants MOS intégrés sur SIMOX". Grenoble INPG, 1991. http://www.theses.fr/1991INPG0090.
Testo completoClark, Stewart Andrew. "Characterisation and efficient simulation of thermal phenomena in SIMOX thermo-optic phase modulators". Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366852.
Testo completoDalponte, Mateus. "Redistribuição e ativação de dopantes em Si com excesso de vacâncias". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2008. http://hdl.handle.net/10183/15397.
Testo completoThe redistribution and electrical activation of n type (As and Sb) and p type (Ga and In) dopants in Si with excess vacancy concentration were analyzed. The vacancies were formed by high dose ion implantation of oxygen or nitrogen at high temperature, following previously studied procedures. Dopants were implanted to a dose of 5x1014 cm-2 at 20 keV in the vacancy rich regions of the samples. Identical doping implantations were performed in bulk Si and SIMOX. Samples were then submitted to thermal annealing at 1000ºC for 10 s or 15 min. The dopants atomic profiles were obtained by Medium Energy Ion Scattering and the active dopant profiles, by differential Hall measurements. The redistribution and the electrical properties of each dopant in bulk Si were similar to those observed in SIMOX, but several differences were observed in the vacancy-rich samples. Vacancies reduced the electrical activation of As and Sb, although the activation was maintained stable after long annealing times. The redistribution of these dopants was, otherwise, dominated by the ion used in the vacancy generation, i.e., nitrogen or oxygen. The presence of oxygen resulted in larger As retained dose, while the presence of nitrogen, in larger Sb retained dose. Regarding the p type dopants, Ga and In, the vacancies played an important role in their redistribution, reducing their out-diffusion and allowing larger retained doses. Ga and especially In electrical activation was low, where strong influence of the pre-implanted ions was observed, especially oxygen.
Hatzopoulos, Nikos. "Development and application of FTIR reflectance spectroscopy for the characterisation of novel SIMOX structures". Thesis, University of Surrey, 1996. http://epubs.surrey.ac.uk/843954/.
Testo completoReis, Roberto Moreno Souza dos. "Síntese de SiC por implantação iônica de carbono em SIMOX(111) e Si(111)". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/16135.
Testo completoSiC is a promising semiconductor for high-power, high-frequency and hightemperature electronic devices and the synthesis of an epitaxial layer of SiC by implantation, on the surface of Si, can be a route for integration with the Si technology. High temperature implantation (600oC) through a SiO2 cap, 1250oC post-implantation annealing under Ar ambient (with 1% of O2), and chemical etching are the base for the present synthesis. 40 keV carbon implantations were performed into SIMOX(111) and Si(111) substrates covered with a 100 nm SiO2 cap. Implantation into SIMOX was the main focus. It has allowed us to obtain a SiC synthesized layer separated from the bulk silicon and to analyze the structural consequences. In this case, it was performed the conversion of a 65 nm Si(111) overlayer of a SIMOX(111) into 30-45 nm SiC. Sequential C implantations (fluence steps of about 5 × 1016 C/cm2), followed by 1250oC annealing, has allowed to estimate the minimum C fluences to reach the stoichiometric composition as 2.3 × 1017 C/cm2 and 2.8 × 1017 C/cm2, when implanting into SIMOX and into Si, respectively. Rutherford Backscattering Spectrometry (RBS) was employed to measure layer composition evolution. By analyzing the sequential implantations it was possible to understand the carbon redistribution during implantation and annealing. A two-sublayers structure is observed in the synthesized SiC separated from the bulk Si, being the superficial one richer in Si. Transmission Electron Microscopy (TEM) has shown that the synthesized layers are always cubic and epitaxial to the original Si structure. TEM also show that single-step implantations, up to the minimum fluences, result in better structural quality. For a much higher C fluence (4 × 1017 C/cm2), a whole stoichiometric layer is obtained, with reduction of structural quality. Our results indicate that excess of carbon content is the major detrimental factor to determine the final crystalline quality in SiC ion beam synthesis, as compared to the stress, resulting from a forced lattice matching between the Si substrate and the synthesized SiC.
LAYADI, ABDELHALIM. "Etude et caracterisation de composants d'optique integree sur silicium sur isolant de type simox". Paris 11, 1998. http://www.theses.fr/1998PA112111.
Testo completoJomaah, Jalal. "Propriétés électriques et modèles physiques des composants mos/soi (simox) à température ambiante et cryogénique". Grenoble INPG, 1995. http://www.theses.fr/1995INPG0152.
Testo completoDeng, Fei. "Self-aligned silicidation (salicide) process on separation by implanted oxygen (SIMOX) substrates and its device application /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1997. http://wwwlib.umi.com/cr/ucsd/fullcit?p9820863.
Testo completoGarcia, Alain. "Contribution à l'étude des mécanismes de création de défauts lors de la réalisation de substrats simox". Grenoble INPG, 1995. http://www.theses.fr/1995INPG0057.
Testo completoFaynot, Olivier. "Caractérisation et modélisation du fonctionnement des transistors MOS ultra-submicroniques fabriqués sur films SIMOX très minces". Grenoble INPG, 1995. http://www.theses.fr/1995INPG0121.
Testo completoDezauzier, Christophe. "Evaluation et comparaison des propriétés de films épitaxiés de 3C-CiC/Si et de 3C-SiC/SIMOX". Montpellier 2, 1995. http://www.theses.fr/1995MON20180.
Testo completoAzevedo, Gustavo de Medeiros. "Estudo do poder de freamento de He, Li, Eu e Bi canalizados em alvos de Si cristalino". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2000. http://hdl.handle.net/10183/10430.
Testo completoIn this work we have performed a systematic sudy of the energy loss of channeled ions along the h100i , h111i and h110i directions of Si single crystals. Two different, but related, topics of the problem were investigated. On the first topic we have studied the stopping powers of heavy ions (Eu and Bi) with energies ranging between 15 and 50 keV, for which the main slowing down mechanism is the nuclear stopping power. The second topic is related to the slowing down of light ions (He and Li) with energies ranging between 0.3 and 8 MeV. In this case, the projectile energy is lost mainly in electronic collisions. The study of the slowing down of channeled heavy ions was performed in an indirect way, by comparing the depth profiles of Eu and Bi ions implanted under channeling conditions with calculations with the program MARLOWE which simulates the interactions of ion beams with solid targets. We have observed for the first time in channeling implantations the Z1 effect, namely, the deformation of the periphery of the electronic clouds of the projectile and target in low energy atomic collisions. While our data for Bi implantations are very well reproduced by MARLOWE predictions the Eu profiles present long tails that go farther in the Si bulk than predicted by MARLOWE. Furthermore, we have demostrated that this behavior is explained in terms of molecular structure ab initio calculations based on the Density Fuctional Theory (DFT). Concerning the light ions, the stopping powers were measured by the Rutherford Backscattering technique with SIMOX samples that consist on a Si single crystal layer 200nm thick on the top of a 5000 nm thick SiO2 layer buried on a Sih100i single cristal. With this technique we have measured both the energy and the angular dependency of the the channeling stopping power. The theoretical analysis of the results was performed by means of computer simulations of the channeled trajectories and in calculatios of the impact parameter dependent energy loss. These comparisons allowed us to determine the relative role played by the energy loss processes under channeling conditions
Elewa, Mohamed Tarek. "Modèles de fonctionnement et méthodes spécifiques d'analyse des composants intégrés MOS de la filière silicium sur isolant (SIMOX)". Grenoble INPG, 1990. http://www.theses.fr/1990INPG0080.
Testo completoFadanelli, Filho Raul Carlos. "Perda de energia e fragmentação de íons moleculares em cristais". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2005. http://hdl.handle.net/10183/10855.
Testo completoIon induced phenomena in matter have been studied for many decades. However, a comparatively minor effort was done in the subject of the interaction of molecular ions with the matter, especially for crystalline solid targets. Such phenomena, for instance, the energy transfer between ions and matter, the ion beam induced X ray emission and the nuclear reaction yield undergo important modifications under molecular ion bombardment. These modifications cannot be explained by the sum of effects induced by each ion component of the ionic cluster. Moreover, for the interaction between the cluster beam and crystalline solids, the cluster breakup induced by the Coulomb explosion leads to important effects in the ion flux distribution along the solid. Finally, vicinage effects among the cluster components change the energy transfer between this cluster and the solid. In order to describe those phenomena in this work, we have used, firstly, coupledchannel calculations to describe the cluster energy transfer, and developed a simple energy loss model. Secondly, backscattering, particle induced X ray emission and nuclear reaction analysis experiments have been measured for H+, H2 + and H3 + beams in Si and SIMOX targets. As a link between theory and experiments, we have performed computer simulations to describe the full interaction between the molecular ions and the target atoms. For the first time, cluster ion flux changes induced by the Coulomb explosion were quantified and, finally, a new simple expression for the cluster energy transfer was developed.
Vettese, Frédéric. "Propriétés électriques de couches minces SIMOX et de couches d'inversion de transistors MOS-HALL modulées par irradiation aux électrons". Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37619090j.
Testo completoOROBTCHOUK, REGIS. "Modelisation et etude de composants pour l'optique integree silicium sur isolant (simox) a la longueur d'onde de 1,3 micron". Paris 11, 1996. http://www.theses.fr/1996PA112001.
Testo completoCho, Eun Chel Electrical Engineering UNSW. "Optical transitions in SiO2/crystalline Si/SiO2 quantum wells and nanocrystalline silicon (nc-Si)/SiO2 superlattice fabrication (Restricted for 24 months until Feb. 2006)". Awarded by:University of New South Wales. Electrical Engineering, 2003. http://handle.unsw.edu.au/1959.4/22492.
Testo completoVonsovici, Adrian Petru. "Structures a guides d'ondes optiques silicium sur isolant (simox) et si#1#-#xge#x/si pour la modulation optique a 1. 3m". Paris 11, 1996. http://www.theses.fr/1996PA112325.
Testo completoSweid, Issam. "Simulation bidimensionnelle des processus technologiques dans le cas des structures silicium-sur-isolant obtenues par implantation d'oxygène : élaboration du programme OSIRIS II". Grenoble INPG, 1990. http://www.theses.fr/1990INPG0077.
Testo completoGuilhalmenc, Caroline. "Étude des mécanismes de création de défauts lors de la réalisation de structures minces silicium-sur-isolant par les procédés SIMOX Faible Dose et Smart-Cut®". Grenoble INPG, 1997. http://www.theses.fr/1997INPG0135.
Testo completoSilicon on insulator materials are very attractive for the production of new generation circuits for low voltage applications. To face the bulk silicon industry and to respond to the increasing interest for the ultra large scale integration, techniques for the formation of high quality SOI material are required. Defect generation mechanisms during the synthesis of two SOI substrates, Low Dose SIMOX and UNIBOND® (elaborated with the SIMOX and Smart-Cut® techniques, respectively), have been investigated. After low dose oxygen implantation (SIMOX process), the formation of buried oxide layers during high temperature annealing has been studied. The buried oxide dielectric quality has been improved with the understanding of oxide precipitate growth and ripening mechanism. Finally, a systematic study has been performed on the top silicon films in order to characterize the crystalline defects (dislocations, stacking faults) and the electrical properties of these two materials. This corresponds to the first results concerning the comparison of these new promising SOI materials for the production of high performance integrated circuits
Araújo, Leandro Langie. "Estudo da perda de energia de Be, B e O em direções aleatórias e canalizadas de alvos de Si e determinação da respectiva contribuição Barkas". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/6101.
Testo completoZufelde, Sabine. ""Comment savoir?" - "Comment dire?" : metafiktionale, metanarrative und metahistoriographische Diskurse über Referenz und Repräsentation in Claude Simons Romanen "La Route des Flandres" (1960), "Triptyque" (1973) und "Les Géorgiques" (1981) /". Tübingen : Gunter Narr Verlag, 2009. http://deposit.d-nb.de/cgi-bin/dokserv?id=3233137&prov=M&dok_var=1&dok_ext=htm.
Testo completoReitsma-La, Brujeere Cornelia Johanna. "Passé et présent dans Les Géorgiques de Claude Simon étude intertextuelle et narratologique d'une reconstruction de l'histoire /". Amsterdam ; Atlanta, GA : Rodopi, 1992. http://catalog.hathitrust.org/api/volumes/oclc/27368198.html.
Testo completoRiella, Caroline Leitão. "SIMon". reponame:Repositório Institucional da UFSC, 2016. https://repositorio.ufsc.br/xmlui/handle/123456789/167967.
Testo completoMade available in DSpace on 2016-09-20T04:39:54Z (GMT). No. of bitstreams: 1 341080.pdf: 1665132 bytes, checksum: 8a281cb9134c64a718044e51aa95bce4 (MD5) Previous issue date: 2016
A ventilação mecânica é a forma mais avançada de suporte à vida. Em pacientes críticos doentes, os fatores associados às decisões que permeiam o ato de ventilar são determinantes na antecipação da morte do paciente e/ou chance de vida.Este estudo tem por objetivo desenvolver uma ferramenta que, ligada ao respirador, analisa os dados obtidos por este, armazenando-os em um banco de dados, emitindo alarmes em situações de emergência, e auxiliando os profissionais na tomada de decisões. O desenvolvimento desta ferramenta teve como colaboração doze profissionais intensivistas quanto à elegibilidade das variáveis pertinentes à monitoração dos pacientes em assistência ventilatória, através de um questionário de variáveis divididas quanto: mecânica respiratória, troca gasosa, sinais vitais e função respiratória. A base de dados de 150 pacientes permitiu a incorporação da ferramenta mais próxima do cenário real, além da motivação contínua no processo de aprendizagem, conhecimentos gerais e especializados, interdisciplinariedade e habilidades na tomada de decisão. O mesmo permite ainda, como ferramenta científica, pesquisas a partir destes dados armazenados. Com a possibilidade de análise de dados em tempo real, todo o histórico do paciente submetido à ventilação mecânica pode ser minuciosamente acompanhado, inclusive com a descrição de todas as intervenções e seus resultados. Fez-se possível desenvolver equações indicadoras de patologias respiratórias como Edema Agudo de Pulmão, Doença Pulmonar Obstrutiva Crônica e Pneumonia, relatórios e gráficos de pacientes com estas patologias e como as mesmas se comportam durante a evolução do paciente em assistência ventilatória. Esta ferramenta pode contribuir para pesquisas científicas vigentes na área para estudos de caso e análises estatísticas.
Abstract: Mechanical ventilation is the most advanced form of life support. In patients critically ill patients, the factors associated with decisions that underlie the act of venting are critical in anticipation of the death of the patient and / or chance of life. This study aims to develop a tool that connected to the respirator, analyzes the data obtained by this, storing them in a database, sending alarms in emergency situations, and helping professionals in decision-making. The development of this tool was to collaboration twelve critical care professionals on the eligibility of variables for monitoring of patients on mechanical ventilation, using a questionnaire variables divided as: respiratory mechanics, gas exchange, vital signs and respiratory function. The 150 patient database allowed the incorporation of the next tool of the real scenario, and the ongoing motivation in the learning process, knowledge and expertise, interdisciplinarity and skills in decision making. The same also allows, as a scientific tool searches from these stored data. With the possibility of real-time data analysis, the entire history of the patient undergoing mechanical ventilation can be closely monitored, including the description of all interventions and their results. It made it possible to develop indicators equations of respiratory diseases such as Acute Lung Edema , Chronic Obstructive Pulmonary Disease and Pneumonia, reports and charts of patients with these diseases and how they behave during the evolution of patient ventilatory assistance. This tool can contribute to current scientific research in the area for case studies and statistical analyzes.
Lindahl, Margot. "La conception du temps dans deux romans de Claude Simon /". Stockholm : Almqvist & Wiksell, 1991. http://catalogue.bnf.fr/ark:/12148/cb35497809m.
Testo completoIonescu, Adrian M. "Modèles et méthodes associes a la caractérisation électrique du tmos : application aux technologies SOI". Grenoble INPG, 1997. http://www.theses.fr/1997INPG0009.
Testo completoSchaumberg, Uta. "Die opere serie Giovanni Simone Mayrs /". München ; Salzburg : Katzbichler, 2001. http://catalogue.bnf.fr/ark:/12148/cb389757071.
Testo completoSimon, Sophie Ollès Christian Maniez Dominique. "Proposer des livres électroniques à la Section sciences du SCD de l'Université Paris-Sud 11". [S.l.] : [s.n.], 2006. http://www.enssib.fr/bibliotheque/documents/ppp/ppp-simon-N.pdf.
Testo completoHarcrow, Michael A. "Trios of Simon A. Sargon including horn". Thesis, Recital, recorded Jan. 30, 2006, in digital collections. Access restricted to the University of North Texas campus. connect to online resource, 2007. http://digital.library.unt.edu/permalink/meta-dc-5171.
Testo completoSystem requirements: Adobe Acrobat Reader. Accompanied by 4 recitals, recorded Nov. 16, 2004, June 20, 2005, Jan. 30, 2006, and Aug. 27, 2007. Includes bibliographical references (p. 88-92).
Désilets, Geneviève. "Le monologue remémoratif au sein du nouveau roman français : du discours à la perception /". Trois-Rivières : Université du Québec à Trois-Rivières, 2004. http://www.uqtr.ca/biblio/notice/tablemat/18441429TM.pdf.
Testo completoRibeiro, Daniel Falkemback. "Palimpsestos da guerra: o intertexto latino em Claude Simon". Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/8/8151/tde-11012016-145619/.
Testo completoThe novel of Claude Simon dialogues with many texts through various composition procedures, especially due to the explicit intertextuality in many cases. In the aesthetic context of the nouveau roman, the French \"new novel\", the author deals in his writing with peculiar linguistic aspects, including the time perspective, which demonstrate its literary character. Thus, there is a clear need to the critics to understand how the various text organizational principles articulate among themselves in favor of a unit, made of fragments that stick and deform according to the demands of the writer, being thus a kind of palimpsest. The Latin intertext, the relationship between a text and the ancient Roman literature, plays a key role in the creation of the Simonian text, which also interferes in our reading of other elements that interact with it. One of the novels which sets out clearly that intertextual factor in Simon\'s literature is La Bataille de Pharsale (1969), our option for object of study, given the rise of problems posed by the presence of classical culture in the work by relations and transformations. In this novel, the war is one of the main points derived from the relations between ancient and modern in writing, so that other compositional aspects of the text, as time and enunciation, seem to establish a reciprocal interference with the intertext. Taking into account these factors, our analysis had the aim of reassessing the critical path on the author\'s work in a comparative and multidisciplinary approach to provide relevant conclusions about our object. From this study, we provide reading possibilities for the novel based on our discussion, as well as new perspectives for the understanding of Claude Simon\'s work and the modern novel in relation to the classical tradition.
Merkl, Franz Josef. "General Simon Lebensgeschichten eines SS-Führers ; Erkundungen zu Gewalt und Karriere, Kriminalität und Justiz, Legenden und öffentlichen Auseinandersetzungen". Augsburg Wissner, 2009. http://d-nb.info/996716807/04.
Testo completoKasper-Heuermann, Birgitta. "Selbstvergewisserung : zur immanenten Poetik in der "Symfonie van Victor Slingeland" von Simon Vestdijk /". Frankfurt am Main ; Berlin ; Paris [etc.] : P. Lang, 1994. http://catalogue.bnf.fr/ark:/12148/cb390872297.
Testo completoRoder, Jan Hendrik de. "Hoofdstukken over S. Vestdijk /". [S.n.] : [S.l.], 2001. http://catalogue.bnf.fr/ark:/12148/cb38801635d.
Testo completoMüller, Sascha. "Kritik und Theologie : christliche Glaubens- und Schrifthermeneutik nach Richard Simon (1638-1712) /". St. Ottilien : Eos-Verl, 2004. http://catalogue.bnf.fr/ark:/12148/cb40058097n.
Testo completo