Bibliografie tematiche / Silicon solar cells

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Letteratura scientifica selezionata sul tema "Silicon solar cells"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 1 agosto 2024

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Articoli di riviste sul tema "Silicon solar cells"

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Vlaskin, V. I. "Nanocrystalline silicon carbide films for solar cells". Semiconductor Physics Quantum Electronics and Optoelectronics 19, n. 3 (30 settembre 2016): 273–78. http://dx.doi.org/10.15407/spqeo19.03.273.

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Wagner, P. "Silicon solar cells". Microelectronics Journal 19, n. 4 (luglio 1988): 37–50. http://dx.doi.org/10.1016/s0026-2692(88)80043-0.

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Wenham, S. R., e M. A. Green. "Silicon solar cells". Progress in Photovoltaics: Research and Applications 4, n. 1 (gennaio 1996): 3–33. http://dx.doi.org/10.1002/(sici)1099-159x(199601/02)4:1<3::aid-pip117>3.0.co;2-s.

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Korkishko, R. M. "Analysis of features of recombination mechanisms in silicon solar cells". Semiconductor Physics Quantum Electronics and Optoelectronics 17, n. 1 (31 marzo 2014): 14–20. http://dx.doi.org/10.15407/spqeo17.01.014.

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Tsakalakos, L., J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima e J. Rand. "Silicon nanowire solar cells". Applied Physics Letters 91, n. 23 (3 dicembre 2007): 233117. http://dx.doi.org/10.1063/1.2821113.

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Hill, R. "Amorphous Silicon Solar Cells". Electronics and Power 32, n. 9 (1986): 680. http://dx.doi.org/10.1049/ep.1986.0402.

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Galloni, Roberto. "Amorphous silicon solar cells". Renewable Energy 8, n. 1-4 (maggio 1996): 400–404. http://dx.doi.org/10.1016/0960-1481(96)88886-0.

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Blakers, A. W., e T. Armour. "Flexible silicon solar cells". Solar Energy Materials and Solar Cells 93, n. 8 (agosto 2009): 1440–43. http://dx.doi.org/10.1016/j.solmat.2009.03.016.

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Won, Rachel. "Graphene–silicon solar cells". Nature Photonics 4, n. 7 (luglio 2010): 411. http://dx.doi.org/10.1038/nphoton.2010.140.

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Carlson, D. E. "Amorphous-silicon solar cells". IEEE Transactions on Electron Devices 36, n. 12 (1989): 2775–80. http://dx.doi.org/10.1109/16.40936.

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Tesi sul tema "Silicon solar cells"

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Søiland, Anne Karin. "Silicon for Solar Cells". Doctoral thesis, Norwegian University of Science and Technology, Department of Materials Technology, 2005. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-565.

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Abstract (sommario):

This thesis work consists of two parts, each with a different motivation. Part II is the main part and was partly conducted in industry, at ScanWafer ASA’s plant no.2 in Glomfjord.

The large growth in the Photo Voltaic industry necessitates a dedicated feedstock for this industry, a socalled Solar Grade (SoG) feedstock, since the currently used feedstock rejects from the electronic industry can not cover the demand. Part I of this work was motivated by this urge for a SoG- feedstock. It was a cooperation with the Sintef Materials and Chemistry group, where the aim was to study the kinetics of the removal reactions for dissolved carbon and boron in a silicon melt by oxidative gas treatment. The main focus was on carbon, since boron may be removed by other means. A plasma arc was employed in combination with inductive heating. The project was, however, closed after only two experiments. The main observations from these two experiments were a significant boron removal, and the formation of a silica layer on the melt surface when the oxygen content in the gas was increased from 2 to 4 vol%. This silica layer inhibited further reactions.

Multi-crystalline (mc) silicon produced by directional solidification constitutes a large part of the solar cell market today. Other techniques are emerging/developing and to keep its position in the market it is important to stay competitive. Therefore increasing the knowledge on the material produced is necessary. Gaining knowledge also on phenomenas occurring during the crystallisation process can give a better process control.

Part II of this work was motivated by the industry reporting high inclusion contents in certain areas of the material. The aim of the work was to increase the knowledge of inclusion formation in this system. The experimental work was divided into three different parts;

1) Inclusion study

2) Extraction of melt samples during crystallisation, these were to be analysed for carbon- and nitrogen. Giving thus information of the contents in the liquid phase during soldification.

3) Fourier Transform Infrared Spectroscopy (FTIR)-measurements of the substitutional carbon contents in wafers taken from similar height positions as the melt samples. Giving thus information of the dissolved carbon content in the solid phase.

The inclusion study showed that the large inclusions found in this material are β-SiC and β-Si3N4. They appear in particularly high quantities in the top-cuts. The nitrides grow into larger networks, while the carbide particles tend to grow on the nitrides. The latter seem to act as nucleating centers for carbide precipitation. The main part of inclusions in the topcuts lie in the size range from 100- 1000 µm in diameter when measured by the Coulter laser diffraction method.

A method for sampling of the melt during crystallisation under reduced pressure was developed, giving thus the possibility of indicating the bulk concentration in the melt of carbon and nitrogen. The initial carbon concentration was measured to ~30 and 40 ppm mass when recycled material was employed in the charge and ~ 20 ppm mass when no recycled material was added. Since the melt temperature at this initial stage is ~1500 °C these carbon levels are below the solubility limit. The carbon profiles increase with increasing fraction solidified. For two profiles there is a tendency of decreasing contents at high fraction solidified.

For nitrogen the initial contents were 10, 12 and 44 ppm mass. The nitrogen contents tend to decrease with increasing fraction solidified. The surface temperature also decreases with increasing fraction solidified. Indicating that the melt is saturated with nitrogen already at the initial stage. The proposed mechanism of formation is by dissolution of coating particles, giving a saturated melt, where β-Si3N4 precipitates when cooling. Supporting this mechanism are the findings of smaller nitride particles at low fraction solidified, that the precipitated phase are β-particles, and the decreasing nitrogen contents with increasing fraction solidified.

The carbon profile for the solid phase goes through a maximum value appearing at a fraction solidified from 0.4 to 0.7. The profiles flatten out after the peak and attains a value of ~ 8 ppma. This drop in carbon content is associated with a precipitation of silicon carbide. It is suggested that the precipitation of silicon carbide occurs after a build-up of carbon in the solute boundary layer.

FTIR-measurements for substitutional carbon and interstitial oxygen were initiated at the institute as a part of the work. A round robin test was conducted, with the Energy Research Centre of the Netherlands (ECN) and the University of Milano-Bicocci (UniMiB) as the participants. The measurements were controlled against Secondary Ion Mass Spectrometer analyses. For oxygen the results showed a good correspondence between the FTIR-measurements and the SIMS. For carbon the SIMS-measurements were significantly lower than the FTIR-measurements. This is probably due to the low resistivity of the samples (~1 Ω cm), giving free carrier absorption and an overestimation of the carbon content.

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Tarabsheh, Anas al. "Amorphous silicon based solar cells". kostenfrei, 2007. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29491.

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Al, Tarabsheh Anas. "Amorphous silicon based solar cells". [S.l. : s.n.], 2007. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-29491.

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Bett, Alexander Jürgen [Verfasser], e Stefan [Akademischer Betreuer] Glunz. "Perovskite silicon tandem solar cells : : two-terminal perovskite silicon tandem solar cells using optimized n-i-p perovskite solar cells". Freiburg : Universität, 2020. http://d-nb.info/1214179703/34.

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Schultz, Oliver. "High-efficiency multicrystalline silicon solar cells". München Verl. Dr. Hut, 2005. http://deposit.d-nb.de/cgi-bin/dokserv?idn=977880567.

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Echeverria, Molina Maria Ines. "Crack Analysis in Silicon Solar Cells". Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4311.

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Abstract (sommario):
Solar cell business has been very critical and challenging since more efficient and low costs materials are required to decrease the costs and to increase the production yield for the amount of electrical energy converted from the Sun's energy. The silicon-based solar cell has proven to be the most efficient and cost-effective photovoltaic industrial device. However, the production cost of the solar cell increases due to the presence of cracks (internal as well as external) in the silicon wafer. The cracks of the wafer are monitored while fabricating the solar cell but the present monitoring techniques are not sufficient when trying to improve the manufacturing process of the solar cells. Attempts are made to understand the location of the cracks in single crystal and polycrystalline silicon solar cells, and analyze the impact of such cracks in the performance of the cell through Scanning Acoustic Microscopy (SAM) and Photoluminescence (PL) based techniques. The features of the solar cell based on single crystal and polycrystalline silicon through PL and SAM were investigated with focused ion beam (FIB) cross section and scanning electron microscopy (SEM). The results revealed that SAM could be a reliable method for visualization and understanding of cracks in the solar cells. The efficiency of a solar cell was calculated using the current (I) - voltage (V) characteristics before and after cracking of the cell. The efficiency reduction ranging from 3.69% to 14.73% for single crystal, and polycrystalline samples highlighted the importance of the use of crack monitoring techniques as well as imaging techniques. The aims of the research are to improve the manufacturing process of solar cells by locating and understanding the crack in single crystal and polycrystalline silicon based devices.
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Li, Dai-Yin. "Texturization of multicrystalline silicon solar cells". Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/64615.

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Abstract (sommario):
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 103-111).
A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create a honeycomb texture. Two distinct approaches for surface texturization were studied. The first approach was photo-defined etching. For this approach, the research focus was to take advantage of Vall6ra's technique published in 1999, which demonstrated a high-contrast surface texture on p-type silicon created by photo-suppressed etching. Further theoretical consideration, however, led to a conclusion that diffusion of bromine in the electrolyte impacts the resolution achievable with Vallera's technique. Also, diffusion of photocarriers may impose an additional limitation on the resolution. The second approach studied was based on soft lithography. For this approach, a texturization process sequence that created a honeycomb texture with 20 ptm spacing on polished wafers at low cost and high throughput was developed. Novel techniques were incorporated in the process sequence, including surface wettability patterning by microfluidic lithography and selective condensation based on Raoult's law. Microfluidic lithography was used to create a wettability pattern from a 100A oxide layer, and selective condensation based on Raoult's law was used to reliably increase the thickness of the glycerol/water liquid film entrained on hydrophilic oxide islands approximately from 0.2 pm to 2.5 pm . However, there remain several areas that require further development to make the process sequence truly successful, especially when applied to multicrystalline wafers.
by Dai-Yin Li.
Ph.D.
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Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells". Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.

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Passivation of silicon surfaces remains a critical factor in achieving high conversion efficiency in solar cells, particularly in future generations of rear contact cells -the best performing cell geometry to date. In this thesis, passivation is characterised as either intrinsic or extrinsic, depending on the origin of the chemical and field effect passivation components in dielectric layers. Extrinsic passivation, obtained after film deposition or growth, has been shown to improve significantly the passivation quality of dielectric films. Record passivation has been achieved leading to surface recombination velocities below 1.5 cm/s for 1 Ωcm n-type silicon covered with thermal oxide, and 0.15 cm/s in the same material covered with a thermal SiO2/PECVD SiNx double layer. Extrinsic field effect passivation, achieved by means of corona charge and/or ionic species, has been shown to decrease by 3 to 10 times the amount of carrier recombination at a silicon surface. A new parametrisation of interface charge, and electron and hole recombination velocities in a Shockley-Read-Hall extended formalism has been used to model accurately silicon surface recombination without the need to incorporate a term relating to space-charge or surface damage recombination. Such a term is unrealistic in the case of an oxide/silicon interface. A new method to produce extrinsic field effect passivation has been developed in which charge is introduced into dielectric films at high temperature and then permanently quenched in place by cooling to room temperature. This approach was investigated using charge due to one or more of the following species: ions produced by corona discharge, Na+, K+, Cs+, Mg2+ and Ca2+. It was implemented on both single SiO2 and double SiO2/SiNx dielectric layers which were then measured for periods of up to two years. The decay of the passivation was very slow and time constants of the order of 10,000 days were inferred for two systems: 1) corona-charge-embedded into oxide grown on textured FZ-Si, and 2) potassium ions driven into an oxide on planar FZ-Si. The extrinsic field effect passivation methods developed in this work allow more flexibility in the combined optimisation of the optical properties and the chemical passivation properties of dielectric films on semiconductors. Increases in cell Voc, Jsc and η parameters have been observed in simulations and obtained experimentally when extrinsic field effect passivation is applied to the front surface of silicon solar cells. The extrinsic passivation reported here thus represents a major advancement in controlled and stable passivation of silicon surfaces, and shows great potential as a scalable and cost effective passivation technology for solar cells.
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Zhu, Mingxuan. "Silicon nanowires for hybrid solar cells". Ecole centrale de Marseille, 2013. http://tel.archives-ouvertes.fr/docs/00/94/57/87/PDF/The_manuscript-4.pdf.

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Forster, Maxime. "Compensation engineering for silicon solar cells". Phd thesis, INSA de Lyon, 2012. http://hdl.handle.net/1885/156020.

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This thesis focuses on the effects of dopant compensation on the electrical properties of crystalline silicon relevant to the operation of solar cells. We show that the control of the net dopant density, which is essential to the fabrication of high-efficiency solar cells, is very challenging in ingots crystallized with silicon feedstock containing both boron and phosphorus such as upgraded metallurgical-grade silicon. This is because of the strong segregation of phosphorus which induces large net dopant density variations along directionally solidified silicon crystals. To overcome this issue, we propose to use gallium co-doping during crystallization, and demonstrate its potential to control the net dopant density along p-type and n-type silicon ingots grown with silicon containing boron and phosphorus. The characteristics of the resulting highly-compensated material are identified to be: a strong impact of incomplete ionization of dopants on the majority carrier density, an important reduction of the mobility compared to theoretical models and a recombination lifetime which is determined by the net dopant density and dominated after long-term illumination by the boron-oxygen recombination centre. To allow accurate modelling of upgraded-metallurgical silicon solar cells, we propose a parameterization of these fundamental properties of compensated silicon. We study the light-induced lifetime degradation in p-type and n-type Si with a wide range of dopant concentrations and compensation levels and show that the boron-oxygen defect is a grown-in complex involving substitutional boron and is rendered electrically active upon injection of carriers through a charge-driven reconfiguration of the defect. Finally, we apply gallium co-doping to the crystallization of upgraded-metallurgical silicon and demonstrate that it allows to significantly increase the tolerance to phosphorus without compromising neither the ingot yield nor the solar cells performance before light-induced degradation.
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Libri sul tema "Silicon solar cells"

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Zaidi, Saleem Hussain. Crystalline Silicon Solar Cells. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-73379-7.

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Goetzberger, Adolf, Joachim Knobloch e Bernhard Voß. Crystalline Silicon Solar Cells. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.

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Hann, Geoff. Amorphous silicon solar cells. East Perth, W.A: Minerals and Energy Research Institute of Western Australia, 1997.

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Takahashi, K. Amorphous silicon solar cells. London: North Oxford Academic, 1986.

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Fahrner, Wolfgang Rainer, a cura di. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37039-7.

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Fahrner, Wolfgang Rainer. Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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Ikhmayies, Shadia, a cura di. Advances in Silicon Solar Cells. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1.

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A, Green Martin, a cura di. High efficiency silicon solar cells. Aedermannsdorf, Switzerland: Trans Tech SA, 1987.

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A, Green Martin, a cura di. High efficiency silicon solar cells. Aedermannsdorf, Switzerland: Trans Tech SA, 1987.

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Pizzini, Sergio. Advanced silicon materials for photovoltaic applications. Hoboken, NJ: John Wiley & Sons, 2012.

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Capitoli di libri sul tema "Silicon solar cells"

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Zweibel, Ken. "Silicon Cells". In Harnessing Solar Power, 101–11. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_6.

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Zweibel, Ken. "Silicon Cells". In Harnessing Solar Power, 113–27. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4899-6110-5_7.

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Martinuzzi, Santo, Abdelillah Slaoui, Jean-Paul Kleider, Mustapha Lemiti, Christian Trassy, Claude Levy-Clement, Sébastien Dubois et al. "Silicon Solar Cells silicon solar cell , Crystalline". In Solar Energy, 226–69. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_461.

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Martinuzzi, Santo, Abdelillah Slaoui, Jean-Paul Kleider, Mustapha Lemiti, Christian Trassy, Claude Levy-Clement, Sébastien Dubois et al. "Silicon Solar Cells silicon solar cell , Crystalline". In Encyclopedia of Sustainability Science and Technology, 9196–240. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4419-0851-3_461.

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Arya, Sandeep, e Prerna Mahajan. "Silicon-Based Solar Cells". In Solar Cells, 37–76. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-7333-0_2.

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Mertens, R. "Crystalline Silicon Solar Cells". In Semiconductor Silicon, 339–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-74723-6_27.

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Wronski, Christopher R., e Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film". In Solar Energy, 270–322. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_462.

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Goetzberger, Adolf, Joachim Knobloch e Bernhard Voß. "Solar Power". In Crystalline Silicon Solar Cells, 5–7. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781119033769.ch2.

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Wronski, Christopher R., e Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film". In Encyclopedia of Sustainability Science and Technology, 9240–92. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4419-0851-3_462.

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Cai, Boyuan, e Baohua Jia. "Nanophotonics silicon solar cells". In Silicon Nanomaterials Sourcebook, 485–98. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-24.

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Atti di convegni sul tema "Silicon solar cells"

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Bhat, P. K., D. S. Shen e R. E. Hollingsworth. "Stability of amorphous silicon solar cells". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41008.

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Luderer, Christoph, Henning Nagel, Frank Feldmann, Jan Christoph Goldschmidt, Martin Bivour e Martin Hermle. "PERC-like Si bottom solar cells for industrial perovskite-Si tandem solar cells". In SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0097026.

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Brandt, Martin S., e Martin Stutzmann. "Investigation of the Staebler-Wronski effect in a-Si:H by spin-dependent photoconductivity". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41015.

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Redfield, David, e Richard H. Bube. "The rehybridized two-site (RTS) model for defects in a-Si:H". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41016.

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Hata, N., e S. Wagner. "The application of a comprehensive defect model to the stability of a-Si:H". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41017.

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McMahon, T. J. "Defect equilibration in device quality a-Si:H and its relation to light-induced defects". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41018.

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Cohen, J. David, e Thomas M. Leen. "Investigation of defect reactions involved in metastability of hydrogenated amorphous silicon". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41019.

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Street, R. A. "Metastability and the hydrogen distribution in a-Si:H". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41031.

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Bennett, M., e K. Rajan. "Thermal annealing of photodegraded a-SiGe:H solar cells". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41007.

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Fuhs, W., H. Branz, W. Jackson, D. Redfield, B. Street e M. Stutzmann. "Panel on metastability modeling". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41009.

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Rapporti di organizzazioni sul tema "Silicon solar cells"

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Hall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, J. Cotter, T. Hughes-Lampros, J. A. Rand, T. R. Ruffins e A. M. Barnett. Thin silicon solar cells. Office of Scientific and Technical Information (OSTI), dicembre 1992. http://dx.doi.org/10.2172/10121623.

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Sinton, R. A., A. Cuevas, R. R. King e R. M. Swanson. High-efficiency concentrator silicon solar cells. Office of Scientific and Technical Information (OSTI), novembre 1990. http://dx.doi.org/10.2172/6343818.

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McGehee, Michael. Perovskite on Silicon Tandem Solar Cells. Office of Scientific and Technical Information (OSTI), marzo 2021. http://dx.doi.org/10.2172/1830219.

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Black, Marcie. Intermediate Bandgap Solar Cells From Nanostructured Silicon. Office of Scientific and Technical Information (OSTI), ottobre 2014. http://dx.doi.org/10.2172/1163091.

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Black, Marcie. Intermediate Bandgap Solar Cells From Nanostructured Silicon. Office of Scientific and Technical Information (OSTI), ottobre 2014. http://dx.doi.org/10.2172/1163251.

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Haney, R. E., A. Neugroschel, K. Misiakos e F. A. Lindholm. Frequency-domain transient analysis of silicon solar cells. Office of Scientific and Technical Information (OSTI), marzo 1989. http://dx.doi.org/10.2172/6346849.

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Rohatgi, A., A. W. Smith e J. Salami. Modelling and fabrication of high-efficiency silicon solar cells. Office of Scientific and Technical Information (OSTI), ottobre 1991. http://dx.doi.org/10.2172/10104501.

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Hall, R. B., C. Bacon, V. DiReda, D. H. Ford, A. E. Ingram, S. M. Lampo, J. A. Rand, T. R. Ruffins e A. M. Barnett. Silicon-film{trademark} on ceramic solar cells. Final report. Office of Scientific and Technical Information (OSTI), febbraio 1993. http://dx.doi.org/10.2172/10135001.

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Rand, J. A., A. M. Barnett e J. C. Checchi. Large-area Silicon-Film{trademark} panels and solar cells. Office of Scientific and Technical Information (OSTI), gennaio 1997. http://dx.doi.org/10.2172/453487.

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Albright, C. E., e D. O. Holte. Diffusion welding of electrical interconnects to silicon solar cells. Office of Scientific and Technical Information (OSTI), maggio 1989. http://dx.doi.org/10.2172/6300204.

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