Bibliografie tematiche / Silicon

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Letteratura scientifica selezionata sul tema "Silicon"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 23 novembre 2024

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Articoli di riviste sul tema "Silicon"

1

Renlund, Gary M., Svante Prochazka e Robert H. Doremus. "Silicon oxycarbide glasses: Part II. Structure and properties". Journal of Materials Research 6, n. 12 (dicembre 1991): 2723–34. http://dx.doi.org/10.1557/jmr.1991.2723.

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Silicon oxycarbide glass is formed by the pyrolysis of silicone resins and contains only silicon, oxygen, and carbon. The glass remains amorphous in x-ray diffraction to 1400 °C and shows no features in transmission electron micrographs (TEM) after heating to this temperature. After heating at higher temperature (1500–1650 °C) silicon carbide lines develop in x-ray diffraction, and fine crystalline regions of silicon carbide and graphite are found in TEM and electron diffraction. XPS shows that silicon-oxygen bonds in the glass are similar to those in amorphous and crystalline silicates; some silicons are bonded to both oxygen and carbon. Carbon is bonded to either silicon or carbon; there are no carbon-oxygen bonds in the glass. Infrared spectra are consistent with these conclusions and show silicon-oxygen and silicon-carbon vibrations, but none from carbon-oxygen bonds. 29Si-NMR shows evidence for four different bonding groups around silicon. The silicon oxycarbide structure deduced from these results is a random network of silicon-oxygen tetrahedra, with some silicons bonded to one or two carbons substituted for oxygen; these carbons are in turn tetrahedrally bonded to other silicon atoms. There are very small regions of carbon-carbon bonds only, which are not bonded in the network. This “free” carbon colors the glass black. When the glass is heated above 1400 °C this network composite rearranges in tiny regions to graphite and silicon carbide crystals. The density, coefficient of thermal expansion, hardness, elastic modulus, index of refraction, and viscosity of the silicon oxycarbide glasses are all somewhat higher than these properties in vitreous silica, probably because the silicon-carbide bonds in the network of the oxycarbide lead to a tighter, more closely packed structure. The oxycarbide glass is highly stable to temperatures up to 1600 °C and higher, because oxygen and water diffuse slowly in it.
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Deng, Xuebiao, Huai Chen e Zhenyu Yang. "Two-dimensional silicon nanomaterials for optoelectronics". Journal of Semiconductors 44, n. 4 (1 aprile 2023): 041101. http://dx.doi.org/10.1088/1674-4926/44/4/041101.

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Abstract Silicon nanomaterials have been of immense interest in the last few decades due to their remarkable optoelectronic responses, elemental abundance, and higher biocompatibility. Two-dimensional silicon is one of the new allotropes of silicon and has many compelling properties such as quantum-confined photoluminescence, high charge carrier mobilities, anisotropic electronic and magnetic response, and non-linear optical properties. This review summarizes the recent advances in the synthesis of two-dimensional silicon nanomaterials with a range of structures (silicene, silicane, and multilayered silicon), surface ligand engineering, and corresponding optoelectronic applications.
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Sciortino, Francesco. "Silicon in silico". Nature Physics 7, n. 7 (luglio 2011): 523–24. http://dx.doi.org/10.1038/nphys2038.

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Nasution, Sarah Purnama. "PENGGUNAAN BAHAN SILIKON SEBAGAI ALTERNATIF PENGGANTI SEDOTAN PLASTIK". Jurnal Seni dan Reka Rancang: Jurnal Ilmiah Magister Desain 2, n. 1 (24 agosto 2021): 119–26. http://dx.doi.org/10.25105/jsrr.v2i1.10104.

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AbstractUse of Silicon Materials as an Alternative to Replacing Plastic Straws. Continuous development hasresulted in many changes in the pattern of people’s living needs, especially in the use of natural resources.This results in reduced natural resources and damage to natural sustainability. One example is the useof plastic straws in the lives of Indonesian people. The use of plastic straws is increasing with increasingconsumption patterns of the Indonesian people. However, these problems can be minimized by the useof environmentally friendly raw materials. Materials that can be an alternative to the problem are theuse of silicon instead of plastic straws. Silicon is a harmless chemical that is synthetic polymer rubberwhich is chemically formed through a series of oxygen-oxygen, which can be used for several times. Thisscientific paper aims to analyze the use of plastic straws in everyday life that have an impact on theenvironment. analyze the impact of alternative use of straws made of silicon so that it can help reducethe use of plastic, and formulate recommendations for making bottled bottles, and ready to eat places ofsilicon.Keywords: chemicals, environmentally friendly plastics, plastic straws, silicon AbstrakPenggunaan Bahan Silikon Sebagai Alternatif Pengganti Sedotan Plastik. Perkembanganzaman yang terus menerus mengakibatkan banyaknya perubahan pada pola kebutuhan hidupmasyarakat terutama pada penggunaan sumber daya alam. Hal tersebut mengakibatkanberkurangnya sumber daya alam dan terjadinya kerusakan pada kelestarian alam. Adapunsalah satu contohnya yaitu penggunaan sedotan plastik dalam kehidupan masyarakatIndonesia. Penggunaan sedotan plastik semakin meningkat dengan bertambahnya polakonsumsi masyarakat Indonesia. Namun permasalahan tersebut dapat diminilisasi denganpenggunaan bahan baku ramah lingkungan. Bahan yang dapat menjadi alternatif darimasalah tersebut yaitu penggunaan silikon sebagai pengganti sedotan plastik. Silikonmerupakan bahan kimia yang tidak berbahaya yaitu karet polimer sintetis yang secara strukturkimianya terbentuk melalui rangkaian silicone-oxygen, dapat digunakan untuk beberapa kalipenggunaan. Makalah ilmiah ini memiliki tujuan yaitu menganalisis penggunaan sedotanplastik dalam kehidupan sehari-hari yang berdampak terhadap lingkungan. menganalisisdampak dari alternatif penggunaan sedotan yang terbuat dari silikon sehingga dapatmembantu pengurangan penggunaan plastik, dan menyusun rekomendasi pembuatan botolkemasan, dan tempat makan siap saji dari bahan silikon.Kata kunci: bahan kimia, plastik, ramah lingkungan, sedotan plastik, silikon.
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Cassedanne, Jeannine Odette, e Hamílcar Freire de Carvalho. "Dosagem de silício em silico-fosfatos naturais". Anuário do Instituto de Geociências 13 (1 dicembre 1990): 39–42. http://dx.doi.org/10.11137/1990_0_39-42.

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This study describes a silicon volumetric titration in minerals silico-phosphates. Silicon is precipited as quinolin silico-molibdate and molybdenum is titsted by complexometric-accumulation method. In the range of 0,5 to 2,5 mg of silicon, a precision of about 0,5% is reached with a good reproducibility. A previous elimination of phosphates ions is necessary.
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Wang, Yalin. "Effect of Nano Titanium Oxide with Different Surface Treatments on Color Stability of Red-Tinted Silicone Rubber". International Journal of Analytical Chemistry 2022 (10 agosto 2022): 1–7. http://dx.doi.org/10.1155/2022/1334903.

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To improve the color stability of facial prosthesis silicone rubber, this paper studied the effect of nano titanium oxide with different surface treatments on the color stability of red pigment-colored silicone rubber. Under the simulated sunlight aging condition, this paper takes MDX4-4210 silicone rubber as the matrix, silicon aluminum-coated nano TiO2 as the shading agent, and cadmium red oil paint as the colorant, and it observes the values of silicon aluminum-coated nano-TiO2 silicone rubber film with 1 mm thickness and different concentrations (0, 0.05%, 0.10%, and 0.15%) before and after aging. The experimental results showed that in the four concentrations of silicon aluminum-coated nano-TiO2 film, the Δ E , Δ L ∗ , Δ a ∗ , Δ b ∗ values gradually decreased with the increase of the concentration of silicon aluminum-coated nano-TiO2. The lowest was in the 0.10% group; however, it increased in the 0.15% group. There was a significant difference among the concentration groups P < 0.05 . The method of covering nano-TiO2 silicone rubber film with different concentrations of silicon aluminum has a certain effect on delaying the discoloration of prosthetic silicone rubber, and it provides a new idea for improving the color stability of the prosthetic silicone rubber.
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Ito, Takuya, Yasuyuki Ota e Kensuke Nishioka. "Pattern Formation of Silicon Oxide Thin Film with InkMask". Applied Mechanics and Materials 481 (dicembre 2013): 98–101. http://dx.doi.org/10.4028/www.scientific.net/amm.481.98.

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Patterned silicon oxide films were formed by a simple process using a dimethyl-silicone-oil as source and inks as patterning masks.After the coating of the ink, the dimethyl-silicone-oil was coated onto the substrate. The sample was heated at 150oC and ozone gas was irradiated. After the heat treatment with ozone gas, patterned silicon film was formed. The circle pattern with a diameter of 20 μm wassuccessfully formed.After the formation of the patterned silicon oxide film, the silicon oxide was hardly observed at the position where the ink coated.
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Abt, I., H. Fox, B. Moshous, R. H. Richter, K. Riechmann, M. Rietz, J. Riedl, R. St Denis e W. Wagner. "Gluing silicon with silicone". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 411, n. 1 (luglio 1998): 191–96. http://dx.doi.org/10.1016/s0168-9002(98)00301-5.

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Hu, Qian, Zhengliang Xue, Shengqiang Song, Robert Cromarty e Yiliang Chen. "Utilization of Silicon Dust to Prepare Si3N4 Used for Steelmaking Additives: Thermodynamics and Kinetics". Processes 12, n. 2 (31 gennaio 2024): 301. http://dx.doi.org/10.3390/pr12020301.

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Silicone monomers are the basic raw materials for the preparation of silicone materials. The secondary dust generated during the preparation of silicone monomer by the Rochow–Müller method is a fine particulate waste with high silicon content. In this paper, the physical and chemical properties of silicon powder after pretreatment were analyzed, and an experimental study was conducted on the use of silicon dust in the preparation of Si3N4, a nitrogen enhancer for steelmaking, by direct nitriding method in order to achieve the resourceful use of this silicon dust. Furthermore, the thermodynamics and kinetics of the nitriding process at high temperatures were analysed using FactSage 8.1 software and thermogravimetric experiments. The results indicate that after holding at a temperature range of 1300~1500 °C for 3 h, the optimal nitriding effect occurs at 1350 °C, with a weight gain rate of 26.57%. The nitridation of silicon dust is divided into two stages. The first stage is the chemical reaction control step. The apparent activation energy is 2.36 × 105 kJ·mol−1. The second stage is the diffusion control step. The silicon dust growth process is mainly controlled by vapor–liquid–solid (VLS) and vapor–solid (VS) mechanisms.
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Polmanteer, Keith E. "Silicone Rubber, Its Development and Technological Progress". Rubber Chemistry and Technology 61, n. 3 (1 luglio 1988): 470–502. http://dx.doi.org/10.5254/1.3536197.

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Abstract This paper has described silicone rubber, its first commercial development in 1944, and its technological progress since then. Pioneering research on silicon opened the door to the development of silicone polymers and silicone rubber. The substitution of two methyl groups on silicon was present in the first examples of silicone rubber and still is the predominant organic group in commercial silicone rubber today. Silicone rubbers have filled a need in the marketplace because of their combination of unusual properties not found in other rubbers. The alternating inorganic main-chain atoms of silicon and oxygen, and the two pendant organic groups, primarily methyl, provide strong chain bonds, backbone flexibility, ease of side-group rotation, and low “inter” and “intra” molecular forces. This molecular makeup and properties thereof are primarily responsible for the observed performance of silicone rubbers. Many significant advances in silicone rubber have been discussed in chronological sequence to trace its history from 1944 to 1987.
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Tesi sul tema "Silicon"

1

Martinez, Nelson Yohan Reidy Richard F. "Wettability of silicon, silicon dioxide, and organosilicate glass". [Denton, Tex.] : University of North Texas, 2009. http://digital.library.unt.edu/ark:/67531/metadc12161.

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Savchyn, Oleksandr. "Silicon-sensitized erbium excitation in silicon-rich silica for integrated photonics". Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4642.

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It is widely accepted that the continued increase of processor performance requires at least partial replacement of electronic interconnects with their photonic counterparts. The implementation of optical interconnects requires the realization of a silicon-based light source, which is challenging task due to the low emission efficiency of silicon. One of the main approaches to address this challenge is the use of doping of silicon based matrices with optical centers, including erbium ions. Erbium ions incorporated in various hosts assume the trivalent state (Er[super]3+) and demonstrate a transition at 1.54 micrometer], coinciding with optical transmission windows in both silicon and silica. Due to the low absorption cross-section and discrete energy levels of the Er[super]3+ ion, indirect excitation is necessary. In late 90s it was demonstrated that the incorporation of excess silicon in erbium-doped silica results in strong erbium sensitization, leading to an increase of the effective absorption cross-section by orders of magnitude. The sensitization was considered to occur via silicon nanocrystals that formed at high annealing temperatures. While a large increase of the absorption cross-section was demonstrated, the incorporation of Si nanocrystals was found to result in a low concentration of excited erbium, as well as silicon related free-carrier absorption. The focus of this dissertation is the investigation of the nature of the sensitization mechanism of erbium in silicon-rich silica. The results presented in the dissertation demonstrate that erbium in silicon-rich silica is predominantly excited by silicon-excess-related luminescence centers, as opposed to the commonly considered silicon nanocrystals. This is a remarkable conclusion that changes the view on the exact origin of erbium sensitization, and that resolves several technical challenges that exist for nanocrystal-based sensitization.; The work shows that in order to sensitize erbium ions in silicon-rich silica there is no need for the presence of silicon nanocrystals, and consequently lower fabrication temperatures can be used. More importantly, the results strongly suggest that higher gain values can be acquired in samples annealed at lower temperature (without silicon nanocrystals) as compared to samples annealed at high temperatures (with silicon nanocrystals). In addition, the maximum gain is predicted to be relatively independent of excitation wavelength, significantly relaxing the requirements on the pump source. Based on the experimental results it is predicted that relatively stable performance of erbium-doped silicon-rich silica is possible up to typical processor operating temperatures of ~ 80 - 90[degrees]C making it a viable material for on-chip devices. The results suggest that low temperature annealed erbium-doped silicon-rich silica is a preferable material for on-chip photonic devices as compared with its high temperature annealed counterpart.; The work shows that the density of indirectly excited erbium ions is significantly larger in samples without silicon nanocrystals (annealed at T[less than]1000[degrees]C) as opposed to samples with silicon nanocrystals (annealed at T[greater than]1000[degrees]C). The density of indirectly excited erbium ions, defining the maximum achievable gain, was demonstrated to be approximately excitation wavelength independent, while the effective erbium absorption cross-section was shown to significantly depend on the excitation wavelength. The excitation mechanism of erbium by luminescence centers was shown to be fast (less than] 30 ns) and capable of erbium sensitization to different energy levels. This multilevel nature of erbium excitation was demonstrated to result in two different mechanisms of the excitation of the first excited state of erbium: fast (less than]30 ns) direct excitation by the luminescence centers, and slow (greater than]2.3 microseconds]) excitation due to the relaxation of erbium ions excited into higher energy levels to the first excited state. Based on photoluminescence studies conducted in the temperature range 15-300K it was shown that the relaxation efficiency of erbium from the second excited state to the first excited state (responsible for the slow excitation mechanism) is temperature independent and approaches unity. The relative stability of the optical properties demonstrated in the temperature range 20-200[degrees]C, implies that relatively stable optical gain can be achieved under realistic on-chip operating conditions. The optimum Si excess concentration corresponding to the highest density of sensitized Er[super]3+ ions is shown to be relatively insensitive to the presence of Si nanocrystals and is ~ 14.5 at.% and ~ 11.5 at.% for samples without and with Si nanocrystals respectively. The presented results and conclusions have significant implications for silicon photonics and the industrial application of Er-doped SiO[sub]2. The work shows that in order to sensitize erbium ions in silicon-rich silica there is no need for the presence of silicon nanocrystals, and consequently lower fabrication temperatures can be used. More importantly, the results strongly suggest that higher gain values can be acquired in samples annealed at lower temperature (without silicon nanocrystals) as compared to samples annealed at high temperatures (with silicon nanocrystals). In addition, the maximum gain is predicted to be relatively independent of excitation wavelength, significantly relaxing the requirements on the pump source. Based on the experimental results it is predicted that relatively stable performance of erbium-doped silicon rich silica is possible up to typical processor operating temperatures of ~ 80 - 90[degrees]C making it a viable material for on-chip devices. The results suggest that low temperature annealed erbium doped silicon-rich silica is a preferable material for on-chip photonic devices as compared with its high temperature annealed counterpart.
ID: 029094291; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references.
Ph.D.
Doctorate
Optics and Photonics
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WHITLOCK, PATRICK W. "SILICON-BASED MATERIALS IN BIOLOGICAL ENVIRONMENTS". University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1116264213.

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Martinez, Nelson. "Wettability of Silicon, Silicon Dioxide, and Organosilicate Glass". Thesis, University of North Texas, 2009. https://digital.library.unt.edu/ark:/67531/metadc12161/.

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Wetting of a substance has been widely investigated since it has many applications to many different fields. Wetting principles can be applied to better select cleans for front end of line (FEOL) and back end of line (BEOL) cleaning processes. These principles can also be used to help determine processes that best repel water from a semiconductor device. It is known that the value of the dielectric constant in an insulator increases when water is absorbed. These contact angle experiments will determine which processes can eliminate water absorption. Wetting is measured by the contact angle between a solid and a liquid. It is known that roughness plays a crucial role on the wetting of a substance. Different surface groups also affect the wetting of a surface. In this work, it was investigated how wetting was affected by different solid surfaces with different chemistries and different roughness. Four different materials were used: silicon; thermally grown silicon dioxide on silicon; chemically vapor deposited (CVD) silicon dioxide on silicon made from tetraethyl orthosilicate (TEOS); and organosilicate glass (OSG) on silicon. The contact angle of each of the samples was measured using a goniometer. The roughness of the samples was measured by atomic force microscopy (AFM). The chemistry of each of the samples were characterized by using X-ray photoelectron spectroscopy (XPS) and grazing angle total attenuated total reflection Fourier transform infrared spectroscopy (FTIR/GATR). Also, the contact angle was measured at the micro scale by using an environmental scanning electron microscope (ESEM).
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Walters, Robert Joseph Atwater Harry Albert. "Silicon nanocrystals for silicon photonics /". Diss., Pasadena, Calif. : California Institute of Technology, 2007. http://resolver.caltech.edu/CaltechETD:etd-06042007-160130.

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Yeh, Jen-Yu. "Electron-beam biased reactive evaporation of silicon, silicon oxides, and silicon nitrides /". Online version of thesis, 1991. http://hdl.handle.net/1850/11106.

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Durham, Simon J. P. "Carbothermal reduction of silica to silicon nitride powder". Thesis, McGill University, 1989. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=74221.

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The processing conditions for carbothermal reduction of silica to silicon nitride was found to be sensitive to several key processing parameters: namely the intimacy of mixing of carbon and silica, the temperature, the specific high surface area of carbon, the nitrogen gas purity and the action of the nitrogen gas passing through the reactants.
Sol-gel processing was found to provide superior mixing conditions over dry mixing, which allowed for complete conversion to silicon nitride at optimum carbon:silica ratios of 7:1. The ideal reaction temperature was found to be in the range of 1500$ sp circ$C to 1550$ sp circ$C. Suppression of silicon oxynitride and silicon carbide was achieved by ensuring that: (a) the nitrogen gas was gettered of oxygen, and (b) that the gas passed through the reactants. Thermodynamic modelling of the Si-O-N-C system showed that ordinarily the equilibrium conditions for the formation of silicon nitride are very delicate. Slight deviations away from equilibrium leads to the formation of non-equilibrium species such as silicon carbide caused by the build-up of carbon monoxide. Reaction conditions such as allowing nitrogen gas to pass through the reactants beneficially moves the reaction equilibrium well away from the silicon carbide and silicon oxynitride stability regions.
The particle size of silicon nitride produced from carbon and silica precursors was of the order of 2-3 $ mu$m and could only be reduced to sub-micron range by seeding with ultra-fine silicon nitride. It was shown that the mechanism of nucleation and growth of unseeded reactants was first nucleation on the carbon by the reaction between carbon, SiO gas and nitrogen (gas-solid reaction), and then growth of the particles by the gas phase reaction (CO, SiO, N$ sb2$).
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Martinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum". Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.

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This study focuses on various aspects of solid-state diffusion bonding of two ceramic-metal combinations, namely: silicon carbide-molybdenum (SiC-Mo), and silicon nitride-molybdenum (Si$ rm sb3N sb4$-Mo). Single SiC-Mo and $ rm Si sb3N sb4$-Mo joints were produced using hot-uniaxial pressing. The microstructure of the resulting interfaces were characterized by image analysis, scanning electron microscopy (SEM), electron probe micro-analysis (EPMA), and X-ray diffraction (XRD). The mechanical properties of the joints were investigated using shear strength testing, depth sensing nanoindentation, and neutron diffraction for residual stress measurement.
SiC was solid-state bonded to Mo at temperatures ranging from 1000$ sp circ$C to 1700$ sp circ$C. Diffusion of Si and C into Mo resulted in a reaction layer containing two main phases: $ rm Mo sb5Si sb3$ and Mo$ sb2$C. At temperatures higher than 1400$ sp circ$C diffusion of C into $ rm Mo sb5Si sb3$ stabilized a ternary phase of composition $ rm Mo sb5Si sb3$C. At 1700$ sp circ$C, the formation of MoC$ rm sb{1-x}$ was observed as a consequence of bulk diffusion of C into Mo$ sb2$C. A maximum average shear strength of 50 MPa was obtained for samples hot-pressed at 1400$ sp circ$C for 1 hour. Higher temperatures and longer times contributed to a reduction in the shear strength of the joints, due to the excessive growth of the interfacial reaction layer. $ rm Si sb3N sb4$ was joined to Mo in vacuum and nitrogen, at temperatures between 1000$ sp circ$C and 1800$ sp circ$C, for times varying from 15 minutes to 4 hours. Dissociation of $ rm Si sb3N sb4$ and diffusion of Si into Mo resulted in the formation of a reaction layer consisting, initially, of $ rm Mo sb3$Si. At 1600$ sp circ$C (in vacuum) Mo$ sb3$Si was partially transformed into $ rm Mo sb5Si sb3$ by diffusion of Si into the original silicide, and at higher temperatures, this transformation progressed extensively within the reaction zone. Residual N$ sb2$ gas, which originated from the decomposition of $ rm Si sb3N sb4,$ dissolved in the Mo, however, most of the gas escaped during bonding or remained trapped at the original $ rm Si sb3N sb4$-Mo interface, resulting in the formation of a porous layer. Joining in N$ sb2$ increased the stability of $ rm Si sb3N sb4,$ affecting the kinetics of the diffusion bonding process. The bonding environment did not affect the composition and morphology of the interfaces for the partial pressures of N$ sb2$ used. A maximum average shear strength of 57 MPa was obtained for samples hot-pressed in vacuum at 1400$ sp circ$C for 1 hour.
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Pellegrino, Paolo. "Point Defects in Silicon and Silicon-Carbide". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3133.

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Tayarani-Najaran, M. H. "Traps at the silicon/silicon-dioxide heterojunction". Thesis, University of Bradford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278879.

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Libri sul tema "Silicon"

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Rochow, Eugene George. Silicone and silicones: About stone-age tools, antique pottery, modern ceramics, computers, space materials, and how they all got that way. Berlin: Springer-Verlag, 1987.

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Rochow, Eugene George. Silicon and Silicones. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2.

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David, Evered, O'Connor Maeve e Symposium on Silicon Biochemistry (1985 : Ciba Foundation), a cura di. Silicon biochemistry. Chichester [West Sussex]: Wiley, 1986.

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Siffert, P., e E. F. Krimmel, a cura di. Silicon. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4.

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Tocci, Salvatore. Silicon. New York: Children's Press, 2005.

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United States. Bureau of Mines, a cura di. Silicon. Washington, D.C: Bureau of Mines, U.S. Dept. of the Interior, 1985.

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Richards, Sally. Silicon Valley: Sand dreams & silicon orchards. Carlsbad, Calif: Heritage Media Corp., 2000.

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1924-, Bergna Horacio E., e Roberts William O. 1936-, a cura di. Colloidal silica: Fundamentals and applications. Boca Raton, FL: Taylor and Francis, 2005.

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ten Hompel, Michael, Michael Henke e Boris Otto, a cura di. Silicon Economy. Berlin, Heidelberg: Springer Berlin Heidelberg, 2022. http://dx.doi.org/10.1007/978-3-662-63956-6.

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Friedrichs, Peter, Tsunenobu Kimoto, Lothar Ley e Gerhard Pensl, a cura di. Silicon Carbide. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2009. http://dx.doi.org/10.1002/9783527629053.

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Capitoli di libri sul tema "Silicon"

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Rochow, Eugene George. "Silicon: The Element". In Silicon and Silicones, 28–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_2.

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Rochow, Eugene George. "The Historical Background". In Silicon and Silicones, 1–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_1.

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Rochow, Eugene George. "The Discovery of the Other Half of Silicon Chemistry, and Its Consequences". In Silicon and Silicones, 40–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_3.

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Rochow, Eugene George. "Necessity as the Mother of Invention: The Development of Practical Silicone Polymers in Answer to Industrial Need". In Silicon and Silicones, 54–73. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_4.

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Rochow, Eugene George. "Liberation from Magnesium!" In Silicon and Silicones, 74–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_5.

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Rochow, Eugene George. "Representative Types of Silicone Polymers and Some of Their Properties". In Silicon and Silicones, 94–128. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_6.

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Rochow, Eugene George. "Some Interesting Applications". In Silicon and Silicones, 129–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_7.

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8

Rochow, Eugene George. "Bio-organosilicon Chemistry and Related Fields". In Silicon and Silicones, 154–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71917-2_8.

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Tan, Xin, Sean C. Smith e Zhongfang Chen. "Hexagonal honeycomb silicon: Silicene". In Silicon Nanomaterials Sourcebook, 171–88. Boca Raton, FL: CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-8.

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Lane, T. H., e S. A. Burns. "Silica, Silicon and Silicones...Unraveling the Mystery". In Current Topics in Microbiology and Immunology, 3–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-85226-8_1.

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Atti di convegni sul tema "Silicon"

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Haschke, Jan, Raphaël Monnard, Luca Antognini, Jean Cattin, Amir A. Abdallah, Brahim Aïssa, Maulid M. Kivambe, Nouar Tabet, Mathieu Boccard e Christophe Ballif. "Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates". In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049262.

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Sturmberg, Björn C. P., Kokou B. Dossou, Lindsay C. Botten, Ara A. Asatryan, Christopher G. Poulton, C. Martijn de Sterke e Ross C. McPhedran. "Absorption of Silicon Nanowire Arrays on Silicon and Silica Substrates". In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/pv.2011.pthb5.

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Hendawi, Rania, Rune Søndenå, Arjan Ciftja, Gaute Stokkan, Lars Arnberg e Marisa Di Sabatino. "Microstructure and electrical properties of multi- crystalline silicon ingots made in silicon nitride crucibles". In SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0089275.

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Ezawa, Motohiko. "Silicene: Silicon-Based Topological Materials". In Proceedings of the International Symposium “Nanoscience and Quantum Physics 2012” (nanoPHYS’12). Journal of the Physical Society of Japan, 2015. http://dx.doi.org/10.7566/jpscp.4.012001.

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Salimi, Arghavan, Ergi Dönerçark, Mehmet Koç e Raşit Turan. "Silicon heterojunction solar cell efficiency improvement with wide optical band gap amorphous silicon carbide emitter". In SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0140952.

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Boccard, Mathieu, Raphaël Monnard, Luca Antognini e Christophe Ballif. "Silicon oxide treatment to promote crystallinity of p-type microcrystalline layers for silicon heterojunction solar cells". In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049266.

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Gaspar, Guilherme, João M. Serra, Jonas Kern e Matthias Müller. "TCAD simulation of electrical characteristics of silicon tunnel junctions for monolithically integrated silicon/perovskite tandem solar cells". In SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0141125.

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Topcu, Seyma, Matteo Schiliró, Lydia Beisel, Pasky Wete, Kathrin Ohmer, Clara Aranda Alonso, Weiwei Zuo et al. "Towards 3-terminal perovskite/silicon tandem solar cells: Influence of silicon bottom cell on tandem cell fabrication". In SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0140291.

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Payne, David, Tsun Hang Fung, Muhammad Umair Khan, Jose Cruz-Campa, Keith McIntosh e Malcolm Abbott. "Understanding the optics of industrial black silicon". In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049297.

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Nemeth, Bill, Steve Harvey, David Young, Matt Page, Vincenzo La Salvia, San Theingi e Pauls Stradins. "Self-assembled monolayers for silicon passivated contacts". In SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0089764.

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Rapporti di organizzazioni sul tema "Silicon"

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Squires, B. D0 Silicon Upgrad: D0 Silicon Cooling System. Office of Scientific and Technical Information (OSTI), luglio 1998. http://dx.doi.org/10.2172/1032104.

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Hamza, A. V., e M. Balooch. Growth of silicon carbide on silicon via reaction of sublimed fullerenes and silicon. Office of Scientific and Technical Information (OSTI), febbraio 1996. http://dx.doi.org/10.2172/231594.

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Weber, William P. Silicon Chemistry. Fort Belvoir, VA: Defense Technical Information Center, gennaio 1988. http://dx.doi.org/10.21236/ada202897.

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Martin U. Pralle e James E. Carey. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices. Office of Scientific and Technical Information (OSTI), luglio 2010. http://dx.doi.org/10.2172/984305.

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Lorenz, Adam. 1366 Project Silicon: Reclaiming US Silicon PV Leadership. Office of Scientific and Technical Information (OSTI), febbraio 2016. http://dx.doi.org/10.2172/1238028.

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Jan W. Nowok, John P. Hurley e John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), giugno 2000. http://dx.doi.org/10.2172/824976.

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Davis, Robert F., Salah Bedair, Jill Little, Robert Macintosh e Joe Sumakeris. Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes. Fort Belvoir, VA: Defense Technical Information Center, gennaio 1991. http://dx.doi.org/10.21236/ada231348.

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House, M. B., e P. S. Day. Ultrasonic characterization of microwave joined silicon carbide/silicon carbide. Office of Scientific and Technical Information (OSTI), maggio 1997. http://dx.doi.org/10.2172/319834.

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Cease, Herman. D0 Silicon Upgrade: D-Zero Silicon Cooling System Description. Office of Scientific and Technical Information (OSTI), febbraio 2001. http://dx.doi.org/10.2172/1481379.

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Chizmeshya, A., A. Demkov, T. Lenosky e O. Sankey. Energetics of crystalline silicon dioxide-silicon (SiO2/Si) interfaces. Office of Scientific and Technical Information (OSTI), luglio 1999. http://dx.doi.org/10.2172/13850.

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