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Articoli di riviste sul tema "Si quantum well"

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Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 19 febbraio 2022

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1

Kuo, P. S., C. Y. Peng, C. H. Lee, Y. Y. Shen, H. C. Chang e C. W. Liu. "Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes". Applied Physics Letters 94, n. 10 (9 marzo 2009): 103512. http://dx.doi.org/10.1063/1.3099337.

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2

Ren, Shang Yuan, John D. Dow e Jun Shen. "Criteria for Si quantum‐well luminescence". Journal of Applied Physics 73, n. 12 (15 giugno 1993): 8458–62. http://dx.doi.org/10.1063/1.353419.

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3

Miller, David, R. K. Schaevitz, J. E. Roth, Shen Ren e Onur Fidaner. "Ge Quantum Well Modulators on Si". ECS Transactions 16, n. 10 (18 dicembre 2019): 851–56. http://dx.doi.org/10.1149/1.2986844.

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4

Qasaimeh, O., e P. Bhattacharya. "SiGe-Si quantum-well electroabsorption modulators". IEEE Photonics Technology Letters 10, n. 6 (giugno 1998): 807–9. http://dx.doi.org/10.1109/68.681491.

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5

Robbins, D. J., M. B. Stanaway, W. Y. Leong, J. L. Glasper e C. Pickering. "Si1?XGeX/Si quantum well infrared photodetectors". Journal of Materials Science: Materials in Electronics 6, n. 5 (ottobre 1995): 363–67. http://dx.doi.org/10.1007/bf00125893.

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6

Rölver, R., B. Berghoff, D. L. Bätzner, B. Spangenberg e H. Kurz. "Lateral Si∕SiO2 quantum well solar cells". Applied Physics Letters 92, n. 21 (26 maggio 2008): 212108. http://dx.doi.org/10.1063/1.2936308.

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7

Lee, J., S. H. Li, J. Singh e P. K. Bhattacharya. "Low-Temperature photoluminescence of SiGe/Si disordered multiple quantum wells and quantum well wires". Journal of Electronic Materials 23, n. 8 (agosto 1994): 831–33. http://dx.doi.org/10.1007/bf02651380.

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8

Sasaki, Kohei, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki e Tohru Okamoto. "Well-width dependence of valley splitting in Si/SiGe quantum wells". Applied Physics Letters 95, n. 22 (30 novembre 2009): 222109. http://dx.doi.org/10.1063/1.3270539.

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9

ABRAMOV, ARNOLD. "RESONANT DONOR STATES IN QUANTUM WELL". Modern Physics Letters B 25, n. 02 (20 gennaio 2011): 89–96. http://dx.doi.org/10.1142/s0217984911025493.

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Abstract (sommario):

A method of calculation of donor impurity states in a quantum well is developed. The used techniques have made it possible to find the binding energy both of ground and excited impurity states attached to each QW subband. The positions of the resonant states in 2D continuum are determined as poles of corresponding wave functions. As a result of such an approach the identification of resonant states in 2D continuum is avoided, introducing special criterions. The calculated dependences of binding energies versus impurity position are presented for various widths of Si / Si 1-x Ge x quantum wells.

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10

Nayak, D. K., J. C. S. Woo, J. S. Park, K. L. Wang e K. P. MacWilliams. "Hole confinement in a Si/GeSi/Si quantum well on SIMOX". IEEE Transactions on Electron Devices 43, n. 1 (1996): 180–82. http://dx.doi.org/10.1109/16.477614.

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11

Sun, Po-Hsing, Shu-Tong Chang, Yu-Chun Chen e Hongchin Lin. "A SiGe/Si multiple quantum well avalanche photodetector". Solid-State Electronics 54, n. 10 (ottobre 2010): 1216–20. http://dx.doi.org/10.1016/j.sse.2010.05.023.

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12

Karunasiri, R. P. G., J. S. Park e K. L. Wang. "Si1−xGex/Si multiple quantum well infrared detector". Applied Physics Letters 59, n. 20 (11 novembre 1991): 2588–90. http://dx.doi.org/10.1063/1.105911.

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13

Liu, Fei, Song Tong, Hyung-jun Kim e Kang L. Wang. "Photoconductive gain of SiGe/Si quantum well photodetectors". Optical Materials 27, n. 5 (febbraio 2005): 864–67. http://dx.doi.org/10.1016/j.optmat.2004.08.025.

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14

Prunnila, Mika, e Jouni Ahopelto. "Two sub-band conductivity of Si quantum well". Physica E: Low-dimensional Systems and Nanostructures 32, n. 1-2 (maggio 2006): 281–84. http://dx.doi.org/10.1016/j.physe.2005.12.093.

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15

Aleshkin, V. Ya, V. I. Gavrilenko e D. V. Kozlov. "Shallow acceptors in Si/SiGe quantum well heterostructures". physica status solidi (c), n. 2 (febbraio 2003): 687–89. http://dx.doi.org/10.1002/pssc.200306183.

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16

Terashima, Koichi, Michio Tajima, Nobuyuki Ikarashi, Taeko Niino e Toru Tatsumi. "Photoluminescence of Si1-xGex/Si Quantum Well Structures". Japanese Journal of Applied Physics 30, Part 1, No. 12B (30 dicembre 1991): 3601–5. http://dx.doi.org/10.1143/jjap.30.3601.

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17

TANG, Y. S., C. M. SOTOMAYOR TORRES, C. D. W. WILKINSON, D. W. SMITH, T. E. WHALL e E. H. C. PARKER. "Photoluminescence from Si/Si0.87Ge0.13 multiple quantum well wires". Le Journal de Physique IV 03, n. C5 (ottobre 1993): 119–22. http://dx.doi.org/10.1051/jp4:1993521.

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18

Tang, Y. S., C. D. W. Wilkinson, C. M. Sotomayor Torres, D. W. Smith, T. E. Whall e E. H. C. Parker. "Optical properties of Si/Si0.87Ge0.13multiple quantum well wires". Applied Physics Letters 63, n. 4 (26 luglio 1993): 497–99. http://dx.doi.org/10.1063/1.109984.

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19

Lai, K., W. Pan, D. C. Tsui, S. Lyon, M. Mühlberger e F. Schäffler. "Quantum Hall ferromagnetism in a two-valley strained Si quantum well". Physica E: Low-dimensional Systems and Nanostructures 34, n. 1-2 (agosto 2006): 176–78. http://dx.doi.org/10.1016/j.physe.2006.03.009.

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20

Antonova, I. V., L. L. Golik, M. S. Kagan, V. I. Polyakov, A. I. Rukavischnikov, N. M. Rossukanyi e J. Kolodzey. "Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures". Solid State Phenomena 108-109 (dicembre 2005): 489–96. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.489.

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Abstract (sommario):

Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (1011 – 1012 cm-2). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW.

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21

Antonova, I. V., E. P. Neustroev, S. A. Smagulova, M. S. Kagan, P. S. Alekseev, S. K. Ray, N. Sustersic e J. Kolodzey. "Confinement Levels in Passivated SiGe/Si Quantum Well Structures". Solid State Phenomena 156-158 (ottobre 2009): 541–46. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.541.

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The set of quantum confinement levels in SiGe quantum wells (QW) was observed in the temperature range from 80 to 300 K by means of charge deep-level transient spectroscopy (Q-DLTS) and transport measurements. These observations proved possible due to a passivation of structure surface with organic monolayer deposition. Si/SiGe/Si structures with different Ge contents in SiGe layer were studied. The confined levels in passivated structures became apparent through DLTS measurements as various activation energies in temperature dependence of the rate of carrier emission from QW. It was found that the recharging of SiGe QWs and carrier emission accomplish due to thermo-stimulated tunneling. The steps in the current-voltage characteristics originated from direct tunneling via the confined states were found to determine the current flow at high fields.

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22

Ray, S. K., G. S. Kar e S. K. Banerjee. "Characteristics of UHVCVD grown Si/Si1−x−yGexCy/Si quantum well heterostructure". Applied Surface Science 182, n. 3-4 (ottobre 2001): 361–65. http://dx.doi.org/10.1016/s0169-4332(01)00449-4.

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23

Wen-qin, Cheng, Cui Qian, Cai Li-hong, Hu Qiang e Zhou Jun-ming. "Electroluminescence spectra of Ge x Si 1- x /Si single quantum well". Acta Physica Sinica (Overseas Edition) 4, n. 11 (novembre 1995): 856–58. http://dx.doi.org/10.1088/1004-423x/4/11/009.

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24

Huda, M. Q., A. R. Peaker, J. H. Evans-Freeman, D. C. Houghton e W. P. Gillin. "Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures". Electronics Letters 33, n. 13 (1997): 1182. http://dx.doi.org/10.1049/el:19970750.

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25

Diehl, L., S. Mentese, E. Müller, D. Grützmacher, H. Sigg, T. Fromherz, J. Faist et al. "Strain compensated Si/SiGe quantum well and quantum cascade on Si0.5Ge0.5 pseudosubstrate". Physica E: Low-dimensional Systems and Nanostructures 16, n. 3-4 (marzo 2003): 315–20. http://dx.doi.org/10.1016/s1386-9477(02)00607-0.

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26

Marris, D., A. Cordat, D. Pascal, A. Koster, E. Cassan, L. Vivien e S. Laval. "Design of a SiGe-Si quantum-well optical modulator". IEEE Journal of Selected Topics in Quantum Electronics 9, n. 3 (maggio 2003): 747–54. http://dx.doi.org/10.1109/jstqe.2003.820404.

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27

Corbin, E., K. B. Wong e M. Jaros. "Absorption inp-type Si-SiGe strained quantum-well structures". Physical Review B 50, n. 4 (15 luglio 1994): 2339–45. http://dx.doi.org/10.1103/physrevb.50.2339.

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28

Tutor, J., e F. Comas. "Si/SiGe Quantum-Well Electron Mobility. Main Scattering Mechanisms". physica status solidi (b) 191, n. 1 (1 settembre 1995): 121–28. http://dx.doi.org/10.1002/pssb.2221910113.

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29

Gaggero-Sager, L. M., e R. Pérez-Alvarez. "Electronic states in B δ-doped Si quantum well". physica status solidi (b) 197, n. 1 (1 settembre 1996): 105–9. http://dx.doi.org/10.1002/pssb.2221970116.

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30

Rached, D., N. Benkhettou e N. Sekkal. "Electronic properties of Si/SiGe ultrathin quantum well superlattices". physica status solidi (b) 235, n. 1 (gennaio 2003): 189–94. http://dx.doi.org/10.1002/pssb.200301356.

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31

Hattori, K., M. Tsujishita, H. Okamoto e Y. Hamakawa. "Electroabsorption spectroscopy of amorphous Si/SiC quantum well structures". Applied Physics Letters 55, n. 8 (21 agosto 1989): 763–65. http://dx.doi.org/10.1063/1.101799.

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32

Abramkin, D. S., M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii e T. S. Shamirzaev. "GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates". Semiconductors 53, n. 9 (settembre 2019): 1143–47. http://dx.doi.org/10.1134/s1063782619090021.

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33

Holtz, P. O., B. Monemar, M. Sundaram, J. L. Merz e A. C. Gossard. "The shallow Si donor confined in a quantum well". Superlattices and Microstructures 12, n. 1 (gennaio 1992): 133–35. http://dx.doi.org/10.1016/0749-6036(92)90235-w.

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34

Kil, Yeon-Ho, Hyeon Deok Yang, Jong-Han Yang, Sukill Kang, Tae Soo Jeong, Chel-Jong Choi, Taek Sung Kim e Kyu-Hwan Shim. "Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD". Materials Science in Semiconductor Processing 17 (gennaio 2014): 178–83. http://dx.doi.org/10.1016/j.mssp.2013.09.018.

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35

Han, Ji Sheng, Sima Dimitrjiev, Li Wang, Alan Iacopi, Qu Shuang e Xian Gang Xu. "InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate". Materials Science Forum 679-680 (marzo 2011): 801–3. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.801.

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Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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36

Christian, George, Menno Kappers, Fabien Massabuau, Colin Humphreys, Rachel Oliver e Philip Dawson. "Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells". Materials 11, n. 9 (15 settembre 2018): 1736. http://dx.doi.org/10.3390/ma11091736.

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In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

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37

Maikap, S., L. K. Bera, S. K. Ray, S. John, S. K. Banerjee e C. K. Maiti. "Electrical characterization of Si/Si1−xGex/Si quantum well heterostructures using a MOS capacitor". Solid-State Electronics 44, n. 6 (giugno 2000): 1029–34. http://dx.doi.org/10.1016/s0038-1101(99)00327-5.

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38

Huang, Rao, Yun Du, Ailing Ji e Zexian Cao. "Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures". Optical Materials 35, n. 12 (ottobre 2013): 2414–17. http://dx.doi.org/10.1016/j.optmat.2013.06.044.

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39

Rack, M. J., T. J. Thornton, D. K. Ferry, J. Huffman e R. Westhoff. "Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications". Solid-State Electronics 45, n. 7 (luglio 2001): 1199–203. http://dx.doi.org/10.1016/s0038-1101(01)00198-8.

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40

Lin, C. H., C. Y. Yu, P. S. Kuo, C. C. Chang, T. H. Guo e C. W. Liu. "δ-Doped MOS Ge/Si quantum dot/well infrared photodetector". Thin Solid Films 508, n. 1-2 (giugno 2006): 389–92. http://dx.doi.org/10.1016/j.tsf.2005.06.109.

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41

Peng, C. Y., F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu e C. W. Liu. "Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si". Applied Physics Letters 90, n. 1 (gennaio 2007): 012114. http://dx.doi.org/10.1063/1.2400394.

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42

Laikhtman, B., e R. A. Kiehl. "Theoretical hole mobility in a narrow Si/SiGe quantum well". Physical Review B 47, n. 16 (15 aprile 1993): 10515–27. http://dx.doi.org/10.1103/physrevb.47.10515.

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43

Salvador, A., G. Liu, W. Kim, Ö. Aktas, A. Botchkarev e H. Morkoç. "Properties of a Si doped GaN/AlGaN single quantum well". Applied Physics Letters 67, n. 22 (27 novembre 1995): 3322–24. http://dx.doi.org/10.1063/1.115234.

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44

Akahane, Kouichi, Naokatsu Yamamoto, Shin-ichiro Gozu e Naoki Ohtani. "High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate". Japanese Journal of Applied Physics 44, n. 1 (10 dicembre 2004): L15—L17. http://dx.doi.org/10.1143/jjap.44.l15.

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45

Maine, Sylvain, Delphine Marris Morini, Laurent Vivien, Eric Cassan e Suzanne Laval. "Design Optimization of a SiGe/Si Quantum-Well Optical Modulator". Journal of Lightwave Technology 26, n. 6 (marzo 2008): 678–84. http://dx.doi.org/10.1109/jlt.2007.916589.

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46

Liu, Jianxun, Jin Wang, Xiujian Sun, Qian Sun, Meixin Feng, Rui Zhou, Yu Zhou et al. "InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si". ACS Photonics 6, n. 8 (9 luglio 2019): 2104–9. http://dx.doi.org/10.1021/acsphotonics.9b00657.

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47

Zingway Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, M. J. Tsai e C. W. Liu. "A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor". IEEE Electron Device Letters 24, n. 10 (ottobre 2003): 643–45. http://dx.doi.org/10.1109/led.2003.817870.

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48

Zhou, W. Z., Z. M. Huang, Z. J. Qiu, T. Lin, L. Y. Shang, D. L. Li, H. L. Gao et al. "Pseudospin in Si -doped InAlAs/InGaAs/InAlAs single quantum well". Solid State Communications 142, n. 7 (maggio 2007): 393–97. http://dx.doi.org/10.1016/j.ssc.2007.03.014.

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49

Pidgeon, C. R., P. Murzyn, J. P. R. Wells, I. V. Bradley, Z. Ikonic, R. W. Kelsall, P. Harrison et al. "THz intersubband dynamics in p-Si/SiGe quantum well structures". Physica E: Low-dimensional Systems and Nanostructures 13, n. 2-4 (marzo 2002): 904–7. http://dx.doi.org/10.1016/s1386-9477(02)00231-x.

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50

Dötsch, U., U. Gennser, C. David, G. Dehlinger, D. Grützmacher, T. Heinzel, S. Lüscher e K. Ensslin. "Single-hole transistor in a p-Si/SiGe quantum well". Applied Physics Letters 78, n. 3 (15 gennaio 2001): 341–43. http://dx.doi.org/10.1063/1.1342040.

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