Tesi sul tema "Semiconducteurs actifs"
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Heiser, Thomas. "Developpement d'une technique d'analyse localisee des defauts electriquement actifs dans les semiconducteurs". Université Louis Pasteur (Strasbourg) (1971-2008), 1988. http://www.theses.fr/1988STR13136.
Testo completoHeiser, Thomas. "Développement d'une technique d'analyse localisée des défauts électriquement actifs dans les semiconducteurs". Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37614162c.
Testo completoAzouani, Rabah. "Elaboration de nouveaux nanomatériaux photocatalytiques actifs sous rayonnement visible". Paris 13, 2009. http://www.theses.fr/2009PA132016.
Testo completoThis PhD work is devoted to elaboraton of nitrogen-doped TiO2 nanoparticles of controlled size for applications in nanocoatings and photocatalysis. The metastable colloids are prepared in a sol-gel reactor with rapid (turbulent) micro-mixing and in-situ particles granulometry, starting from titanium tétraisopropoxyde precursor. The effect of the fluids mixing on the particle size distribution was analysed using hydrodynamic k-ε modeling. The study of the nucleation-growth kinetics has evidenced that the hierarchical growth mechanism is also valid for the sub-nucleus units (clusters). Different domains of the cluster stability and growth kinetics have been discovered. The nitrogen-doped TiO2 nanoparticles were prepared by hydroxyurea (HyU) injection into the reaction zone at the nucleation stage. The doping accelerates the reaction kinetics and induces strong yellow coloration of the nanocolloid, due to a new absorption band in the spectral range of 380-550 nm. This has been explained by the formation of a stable HyU-TiO2 complex, which bounds two nanoparticles through the NCO group. FTIR, Raman, UV-visible absorption and XPS measurements confirm the complex formation. In particular, the XPS measurements suggest formation of the interstitial NO (400 eV peak). The doped nanocoatings were prepared on glass beads and thereafter were subjected to calcination in order to achieve most catalytically active anatase polymorph. The XPS, ATG-MS and EXAFS measurements indicate that the calcination temperature is critical for the dopant retention in the prepared material. The photocatalytic tests were performed on trichlorethylene degradation in gas phase under visible light illumination. The influence the hydrolysis ratio, HyU molar loading and calcination temperature on photocatalytic activity was studied
Remram, Mohamed. "Etude des défauts électriquement actifs induits par le recuit rapide isotherme dans le silicium". Lyon, INSA, 1986. http://www.theses.fr/1986ISAL0028.
Testo completoMarrakchi, Ghanem. "Etude comparative de différentes techniques de recuit rapide sur les défauts électriquement actifs dans l’arséniure de gallium non implante". Lyon, INSA, 1987. http://www.theses.fr/1987ISAL0049.
Testo completoTalib, Abdullah Saleh. "Influence du caractère semiconducteur des minéraux sur leur interaction avec les tensio-actifs en solution : application au système galène-xanthate". Montpellier 2, 1986. http://www.theses.fr/1986MON20202.
Testo completoGassoumi, Malek. "Etude des défauts électriquement actifs dans les composants hyperfréquences de puissance dans les filières SiC et GaN". Lyon, INSA, 2006. http://theses.insa-lyon.fr/publication/2006ISAL0029/these.pdf.
Testo completoThe increasing demanded of components allowing operating in strong power in high frequency and in high temperatures drove to the development of electronics system on semiconductors base to wide band gap such as the gallium nitride (GaN) and silicon carbide (SiC). However the performances are limited by the quality of the material (impurities, crystallographic defects). In this thesis, we are interested in the study of two devices: MESFETs 4H-SiC, HEMTs AlGaN/GaN/Si for hyperfrequency and power applications. The study of the output characteristics revals anomalies. For MESFETsH-SiC, hysteresis effect on drain/source conductance spectacular Kink effect and shift of voltage has been observed. The DLTS and CDLTS measurements demonstrate that these effects are principally due to the presence of deep centers in the structures. For HEMT AlGaN/GaN/Si, hysteresis effect, series resistance is observed. The CDLTS measurements with impulses on the drain demonstrate the presence of punctual traps by extended defects
Gassoumi, Malek Guillot Gérard Maaref Hassen. "Etude des défauts électriquement actifs dans les composants hyperfréquences de puissance dans les filières SiC et GaN". Villeurbanne : Doc'INSA, 2006. http://docinsa.insa-lyon.fr/these/pont.php?id=gassoumi.
Testo completoThèse soutenue en co-tutelle. Titre provenant de l'écran-titre. Bibliogr. à la fin de chaque chapitre.
Mehor, Benchenane Halima. "Spectroscopie des défauts électriquement actifs par simplex-DLTS dans les structures P+N silicium préamorphisées au Germanium". Rouen, 2005. http://www.theses.fr/2005ROUES054.
Testo completoOur work is a contribution to the characterization of the necessary structures with Silicon in technology ULSI. They are ultra-thin P+N junction obtained on a preamorphized Silicon substrate with Germanium with various energies and doped with the Boron which poses problems associated with its abnormal diffusion during annealing. In chapter I, we present the stages of the realisation of those junctions and the defects generated by the preamorphisation and rapid thermal annealing. The object of chapter II is the electrical characterization to initially determine the dominating mechanisms of conduction in its structures and the second time their behavior under a low frequency magnetic field. In chapter III are presented two recent techniques of spectroscopic analyses of the defects which exploit the transitory responses of capacity of its junctions. A new more powerful method: Simplex-DLTS is presented in chapter IV
Ben, Naceur Walim. "Evaluation des solutions d’encapsulation quasi-hermétique pour les composants actifs hyperfréquences". Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR14793/document.
Testo completoMicrowave devices for satellite applications are encapsulated in hermetic packages as metal or ceramic housings. The strong improvement of organic materials, especially outgassing and ionic impurity characteristics, makes it possible to use them as non-hermetic packaging solutions for space environment. Plastic encapsulations open proven gain perspectives of miniaturization and cost. The validation of an encapsulation technology is based on the achievement of standard reliability tests, typically 1000 hours at 85°C and 85% of relative humidity. Such tests are applicable regardless of the mission storage profile, devices and packaging technology. Moreover, the conditions of these tests are not clearly defined, e.g. the application or not of a strong electric field to the component. Yet this single parameter becomes dominant when the conditions are met to allow corrosion mechanisms, e.g. by the presence of condensed water and ionic contamination. This thesis focused on understanding the failure mechanisms that can occur during accelerated aging tests in high temperature and high humidity environment. For this work, a methodology has been implemented to establish DC electrical signatures of two different AsGa MMIC technologies. These tests were replicated on components with and without encapsulation by a silica-filled epoxy resin, dispensed by the dam-and-fill process. Thus, it was possible to distinguish failures due to the intrinsic degradation of the components from the effective protection or not of the plastic encapsulation. In parallel, the behavior of resin samples under different moist and heat atmospheres has been tested and a modeling was proposed to predict their moisture uptake. Concerning the effect of the dam-and-fill encapsulation technology, the results were contradictory and dependent of components batch. These results are to balance by the relatively limited size of the sampling for each test series, with and without encapsulation. Indeed, for the representative technology of this work, the presence of dam&fill encapsulation on a first batch of components has tended on one hand not to avoid nor even to delay the appearance of electric leakage, and on the other hand to aggravate these damages in the point to lead to failures in most of cases. Furthermore, doubts remain on the quality of this batch, especially regarding the passivation. For a second batch of devices with the same technology, an improvement of the humidity resistance was observed for encapsulated devices, compared to bare devices. In the failure analysis process of encapsulated devices, it is not possible to access directly to the observation of a defect at its surface. We therefore sought an alternative to overcome the problems represented by the encapsulating materials. A new approach was proposed. It combined infrared thermography method in hot spot mode, X-ray imaging and optical observations. We first located the defect from the front side of the encapsulated device. Then, the transparency of the AsGa substrate allowed infrared observations by the back side of the component. A relatively rapid and simple methodology was proposed and its feasibility demonstrated
Fisne, Christophe. "Métasurfaces actives pour applications large bande". Thesis, Toulouse, INPT, 2020. http://www.theses.fr/2020INPT0086.
Testo completoMetasurfaces have particular electromagnetic properties such as unusually refractive index, electromagnetic band gap and high impedance surface. Also named Artificial Magnetic Conductor (AMC), they are a focus of interest in the antennas field. Indeed, greater isolation between radiating elements and miniaturization of antenna with reflective plan can be achieved with those structures. Although they suffer from poor bandwidth (less than 10%), which make them inconsistent with wideband applications. To overcome this frequency limitation, implementation of non-Foster active circuits paves the way to extend the bandwidth of high impedance surfaces. In this respect, the thesis goal is to conceive a wideband high-impedance reflector with the integration of non-Foster circuits. The aimed bandwidth is [0.5 GHz; 1.5 GHz], that is to say 100% of the relative bandwidth. In this thesis, a synthesis methodology to realize a wideband AMC is proposed: an AMC reflector under normal incidence is conceived from a metasurface connected to a non-Foster circuit. The circuit is loaded with an optimized impedance. Analytic relationships between the reflection coefficient and the load impedance of the non-Foster circuit are given. Firstly, a metasurface working with linear polarizations and where the connection of the non-Foster circuit is offset. This topology protects the circuit against the perturbations due to the incident electromagnetic waves. Moreover, a study to extend metasurface functioning to circular polarization is under way. Then, a non-Foster circuit of type Negative Impedance Converter (NIC) is designed. A particular topology of circuit is selected in order to simplify the realization. It has been conceived using only components “off-the-shelf” and potentiometers which control the input impedance. Finally, the circuits load is calculated to obtain the attended wideband AMC behavior according with the real performance of the non-Foster circuit
Darga, Arouna. "Etude des défauts électriquement actifs et des mécanismes de recombinaison des cellules solaires à base de Cu(In1-xGax)(Se1-ySy)2 co-évaporé ou électrodéposé". Paris 6, 2007. http://www.theses.fr/2007PA066413.
Testo completoBen, Naceur Walim. "Evaluation des solutions d'encapsulation quasi-hermétique pour les composants actifs hyperfréquences". Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-00991023.
Testo completoMonti, Federico. "Time sampling using four-wave mixing to measure the dynamics of semiconductor nanolasers". Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP026.
Testo completoPhC nanolasers are receiving more and more attention due to their unique capacity to manipulate and confine light at a very small scale. Their small footprint and low thresholds make them ideal candidates for realizing optical interconnects, thus addressing the increasing demands for data transmission speed and power consumption. Moreover, their singular geometry enables the control of their spontaneous emission properties. This reveals PhC nanolasers' uniqueness from a fundamental point of view, highlighting their potential to serve as candidates for novel research in light-matter interaction. Despite these advantages, a characterization of their emission and their dynamical properties is still missing, due to the current limitations of the detection capabilities at infrared wavelengths.In this thesis, I have developed a time gating detection technique based on FWM, to measure the ultra fast response of 1D nanolasers. By carefully studying the interplay between nonlinearities and dispersion, it was possible to reach a high sensitivity of a few photons and a resolution of 2 ps. Further improvements in sensitivity, down to less than a photon detection, is predicted by employing higher gate powers. This can open the way to study photon statistics and quantum effects deep in the quantum regime.The profiles of 1D nanolasers feature a very fast onset of the emission and a long decay, compatible with a β factor of 0.12 and a photon lifetime of 20 ps. A novel approach to obtaining the values of these two parameters controlling laser dynamics has been developed: they have been directly retrieved from the%The manner in which these two parameters controlling laser dynamics have been obtained constitutes a novel approach, as they have been directly retrieved from theultra-fast response of nanolasers, instead of solely relying on steady state measurements such as the S curve, which, in many cases, can lead to inaccurate estimations due to the interdependence of these parameters. The dynamical response of 1D nanolasers is compatible with a maximum modulation speed of around 30 GHz, fullfiling the requirement for low threshold ultra compact laser sources for photonic integrated circuits and optical communications.The high sensitivity and resolution of the technique allowed us to measure for the first time, to the best of our knowledge, an adiabatic wavelength conversion of photons with a wavelength shift as large as 1.2 nm. This shows the potential of the technique in studying ultra fast dynamics at NIR wavelengths
Mille, Julien. "Modèle déformables pour la segmentation et le suivi en imagerie 2D et 3D". Tours, 2007. http://www.theses.fr/2007TOUR4051.
Testo completoDeformabe models such as active contours are general and powerful tools for image segmentation, enabling to add constraints and prior knowledge about the objects to be segmented. Deformable models are geometrical structures deformed by an evolution method in order to fit the object boundaries. Segmentation is expressed as an optimization problem, which purpose is to determine the curbe of the surface minimizing an objective function (an energy), made up of internal terms related to to model's geometrical smoothness and external terms attaching the model to the image data. In this thesis, we develop an active contour model for 2D segmentation and an active surface model for 3D segmentation, both being based on a unified framework. We also extend the surface model to 3D+T segmentation and tracking. We propose several improvements on the greedy algorithm, a numerical method minimizing the objective function. We also develop an original region-based external term, referring it to as narroy band region energy. It combines local and global features about structures of interest and offers advantages relative to the computational cost and consistency with respect to data
Voutsinas, Georgios. "Optimisation of the ILC vertex detector and study of the Higgs couplings". Thesis, Strasbourg, 2012. http://www.theses.fr/2012STRAE053/document.
Testo completoThis thesis is a contribution to the " Detector Baseline Document ", describing the ILD detector which is intendedfor the International Linear Collider (ILC).The physics goals of the ILD call for a vertex detector (VXD) particularly light, rapid and very granular allowing toreach an unprecedented resolution on the impact parameter of the tracks that reconstruct the particles producedin the studied interactions. The principle goal of this thesis is to show how to optimise the parameters of the VXDin the case that is composed of Active Pixel Sensors manufactured in industrial CMOS technology (CAPS). Thiswork has been realised by studying the sensitivity of the performance of the heavy flavour tagging and theprecision on the hadronic branching fractions of the Higgs boson as a function of different sets of VXDparameters.The specifications of the VXD, particularly ambitious, call for the development of a novel silicon pixel sensorstechnology, the CAPS, which was pioneered by the PICSEL group of IPHC. The readout speed and the influenceof the fabrication parameters have been studied in this thesis, and CAPS prototypes have been characterised intest beams. Finally, the tracking performance of a CAPS based VXD has been evaluated with simulation studies
Feddi, El Mustapha. "Action d'un champ magnétique sur les trions excitoniques dans les semiconducteurs". Metz, 1987. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/1987/Feddi.El_Mustapha.SMZ8707.pdf.
Testo completoThe excitonic trions are moving bound states of an exciton and an electron or a hole in a semiconductor. Their binding energies are often small as resulting from variational calculations. Though original properties are expected due to their charge, their experimental identification may be difficult because the exciton, biexciton and trion lines are sometimes very close. We show how a constant magnetic field may be used to distinguish the trions from other excitonic complexes. Indeed, in the case of the exciton or biexciton, the motion of the centre of mass may be eliminated by means of a lamb gauge transformation because these complexes are neutral. However, in the case of the charged trions, only the motion in the direction of the field may be eliminated by means of an analog one gauge transformation. Generally speaking, the relative motion cannot be separated from the motion of the centre of mass in a plane perpendicular to the magnetic field. However, for not too high fields, htis latter is expected to be slow in comparison with the former. We therefore separate the two motion in the sense of the Born-Oppenheimer approximation. In this limit, the centre of mass of the trions behave like single charged particles so that additional Landau levels appear in the energy spectrum. Finally, we compute the relative energy by means of the variation method using a 34-term Hylleraas-type wave function and discuss the optical absorption. We show which the absorption coefficient presents a pics succession whose the maxima are in near Landau's levels. Indeed, it show a oscillatory magneto-absorption
Feddi, El-Mustapha. "Action d'un champ magnétique sur les trions excitoniques dans les semiconducteurs". Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37604989d.
Testo completoFEDDI, EL MUSTAPHA Stebe Bernard. "ACTION D'UN CHAMP MAGNETIQUE SUR LES TRIONS EXCITONIQUES DANS LES SEMICONDUCTEURS /". [S.l.] : [s.n.], 1987. ftp://ftp.scd.univ-metz.fr/pub/Theses/1987/Feddi.El_Mustapha.SMZ8707.pdf.
Testo completoMashade, Mohamed Bakry el. "Largeur spectrale du laser semiconducteur dans l'approximation d'une couche mince active". Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37607749b.
Testo completoZurletto, Claude. "Influence de recuit à 425o C sur des propriétés électriques du silicium polycristallin : action d'une interface aluminium-silicium". Aix-Marseille 3, 1988. http://www.theses.fr/1988AIX30053.
Testo completoTalib, Abdullah Saleh. "Influence du caractère semiconducteur des minéraux sur leur interaction avec les tensio-actifs en solution application au système galène-xanthate /". Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37601451m.
Testo completoMoradi, Aali. "Action d'un champ magnétique sur les trions excitoniques dans les puits quantiques de semi-conducteurs". Metz, 2001. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/2001/Moradi.Aali.SMZ0122.pdf.
Testo completoThis work is devoted to the study of the charged excitons (or trions) in semiconductor quantum wells, with or without an external magnetic field. The numerical results concern more particularly GaAS/GaAlAs and CdTe/CdZnTe compounds due to their possible in the field of optoelectronics. Charged excitons result from the binding of an exciton (electron hole pair) and an electron (negative trion) or a hole (positive trion), and may be considered as mobile as charged particles. Thus, they are expected to exhibit original properties, differentiating them from other excitonic complexes. In a first study, without any magnetic field, we have determined the binding energies of the two kinds of trions in the frame of the effective mass approximation within a two isotropic parabolic bands model. It results that in the case of the above compounds, the two kinds of trions are stable against dissociation for all values of the well widths. Moreover the optical absorption does not give rise to sharp lines, as in the cases of excitons or bound excitons, but to a main absorption threshold followed by a decreasing tail on its low energy side. We have also studied the influence of a magnetic field directed along the growth axis. It appears that the field gives rise to an increase of the energies. Moreover in the case of low magnetic fields, we have shown that the energies splits into Landau levels. This is due to the quantized motion of thein-plane motion of the center of mass of the trions. This result is original, and has not yet received experimental confirmation. Finally we have shown that the optical magnetoabsorption reduces to a serie of Dirac peaks
Kaddour, Mohsen. "Contribution à la modélisation d'un coupleur actif à onde lente en lignes de transmission à contact métal-semiconducteur". Toulouse, INPT, 1987. http://www.theses.fr/1987INPT034H.
Testo completoKaddour, Mohsen. "Contribution à la modélisation d'un coupleur actif à ondes lentes en lignes de transmission à contact métal-semiconducteur". Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37606265z.
Testo completoSuarez, Aparicio Hector. "Étude de la mise en parallèle de composants de puissance : application au parallélisme actif de modules de puissance". Aix-Marseille 3, 2004. http://www.theses.fr/2004AIX30020.
Testo completoPower electronics applications, that need high current levels, force us to develop power switches based on the parallel connexion of available standard devices. This thesis analyses the IGBT parallel connexion and studies the active control of the current imbalance. The design of the different topologies (master slave and decentralized) integrating active current balance shows that the correction action improves the current and loss distribution. The decentralized topology carries out a better current balancing than the centralized topology, due to an additional feedback loop. This loop also allows the elimination of bigger imbalance amplitude. On the other hand, in terms of total loss the master slave topology performs better because the decentralized topology slows down the switching phases. The balancing principle applied to the parallel connexion of the identical IGBTs, different IGBTs and IGBT+MOSFET confirms the interest of the active current balance. Therefore, this technique allows us to propose a new procedure of maintenance, substituting a device among others while preserving the current balance
Lavastre, Eric. "Déclenchement des microlasers solides émettant à 1,55 µm par un dispositif à semiconducteur". Université Joseph Fourier (Grenoble ; 1971-2015), 1998. http://www.theses.fr/1998GRE10173.
Testo completoDjelloul, Abdelatif. "Dépôt plasma de silicium amorphe hydrogène à partir de silane : cas des puissances élevées". Toulouse, INPT, 1997. http://www.theses.fr/1997INPT026G.
Testo completoMaës, Clément. "Plasmonique active pour l’infrarouge sur semi-conducteur fortement dopé". Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS033.
Testo completoThe context of my thesis deals with infrared (IR) multispectral imaging and in particular with plasmonics, a field of electromagnetic optics whose the aim is to study and exploit surface waves existing at the interface between a metal and a dielectric. We seek to miniaturize optical functions thanks to nanotechnologies and more precisely to perform IR spectral filtering at the detection pixel level by integrating a nano-resonator. Usually we use dielectrics and metals, but the integration is complex. I am exploring the potential offered by heavily doped semiconductors to replace metals, which could allow better integration into technological processes for fabricate a photodetector or emitter. I use III-V semiconductors, compatible with the epitaxial growth of type 2 superlattice (T2SL) of long wave infrared photodetectors (LWIR). Furthermore, working with a heavily doped semiconductor offers the possibility of modifying the resonance frequency by adjusting the density of free carriers by the action of a potential difference.I study architectures of "GMR" components (Guided-Mode Resonance), usually formed by a waveguide in dielectric, where occurs the resonance, and a grating in dielectric or metal allowing the coupling between the incident or transmitted wave and the guided mode thanks to the ±1 orders diffracted by the grating in the thin layer. The current trend is to integrate these components directly at the level of the detection pixel but at the cost of numerous fabrication steps. I am studying the possibility of using exclusively semiconductors to simplify the fabrication process and allow monolithic integration of the filter into the detector. The waveguide consists of an intrinsic semiconductor and the grating of heavily doped semiconductor. The spectral range of interest is in the far infrared (8 μm - 14 μm).First, theoretical and experimental demonstrations of an all-semiconductor nano-structured spectral filter for infrared based on guided-mode resonance were carried out. I dimensioned and then fabricated a sample where the first step consists in depositing by epitaxy a layer of GaSb and a layer of highly doped InAsSb on a GaAs substrate before a photolithography step to define the mask of the etching reactive ionic etching in order to obtain the diffraction grating. An experimental work then made it possible to characterize the component (measurement under normal incidence, angular study, measurement at low temperature) with in particular the realization of an angular characterization setup.In parallel, I studied an appropriate stack of doped materials allowing, by applying an electrical voltage, to move the free electrons from doping in the grating and the guide, which then locally modifies the refractive index and therefore directly the conditions for guiding the light by phase variation. Different approaches have been presented in an attempt to adjust the resonance wavelength of the GMR spectral filter: accumulation and depletion of charges in the diffraction grating, insertion of a PN junction in the waveguide, ...Finally, a first brick for the integration of a T2SL in an optical nano-resonator to make an all-semiconductor nano-structured photodetector was studied. I proposed the theoretical design of several nano-resonators integrating a T2SL type photodetector (InAs/GaSb). I designed three architectures with distinct spectral properties, which differ in particular in the thickness of the T2SL layer
Guillebot, de Nerville Marie Anne. "Dépôt par activation plasma de matériaux diélectriques sur substrat semi-conducteur pour les nouvelles technologies submicroniques : Optimisation d'un réacteur industriel". Montpellier 2, 1995. http://www.theses.fr/1995MON20049.
Testo completoLesecq, Marie. "Fonctionnalités actives en optique intégrée à base de fils optiques en filière InP : application à la commutation optique". Lille 1, 2007. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/2007/50376-2007-127.pdf.
Testo completoBachaalany, Mario. "Utilisation de capteurs CMOS rapides pour l'imagerie X à très haute sensibilité". Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00955895.
Testo completoNachab, Abdellatif. "Etudes expérimentales et modélisations Monte Carlo de l'auto-absorption gamma et de la dosimétrie active par capteurs CMOS". Phd thesis, Université Louis Pasteur - Strasbourg I, 2003. http://tel.archives-ouvertes.fr/in2p3-00023644.
Testo completoDelachat, Florian Brice. "Élaboration et caractérisation de nanoparticules de silicium dans du nitrure de silicium en vue d’applications photovoltaïques". Strasbourg, 2010. http://www.theses.fr/2010STRA6148.
Testo completoSilicon nanoparticles (Si-nps) embedded in a silicon nitride matrix (SiNx) are promising for photovoltaic applications. These applications require tuning the optical properties of the films by managing the quantum confinement of the Sinps. This thesis work deals with the elaboration and characterization of silicon nanostructures embedded in silicon nitride. Thin films (»100nm) of silicon rich silicon nitride (SRSN) have been deposited by PECVD and subsequently annealed at 1100°C/30min to allow the nucleation of Si-nps. We show that the control of the silicon excess generates a large diversity of nanostructures including a high density (2x1012 cm-2) of amorphous Si-nps with an average size of 3nm, percolated crystalline nanostructures or nano-columnar crystalline arrangements. However, the large size distribution of Si-nps fathered by the single layer approach limits the control of the optical properties expected by quantum confinement in Si-nps. Then, we have investigated the formation and characterization of super-lattices composed of alternative layers of SRSN and SiO2 or Si3N4 ultrathin films. These stoichiometric layers have been used to limit the Si-nps growth in order to thin down the size distribution. We have identified the experimental parameters, namely the Si excess and the thickness of the SRSN, needed for the formation of Si-nps with size small enough to be compatible with quantum confinement. Finally resistivity experiments in the system Si-nps-Si3N4 have been conducted in order to identify the electrical transport problems that should be overcome for coming application as PV tandem cell for instance
Pes, Salvatore. "Nanostructures-based 1.55 μm-emitting Vertical-(External)-Cavity Surface-Emitting Lasers for microwave photonics and coherent communications". Thesis, Rennes, INSA, 2019. https://tel.archives-ouvertes.fr/tel-02892844.
Testo completoThe work presented in this dissertation focus on the development of InP-based semiconductor vertical-cavity lasers, based on quantum nanostructures and emitting at the telecom wavelengths (1550-1600 nm). A new technological process for the realization of compact VCSELs is described. This process (named TSHEC) has been employed to realize optically-pumped VCSELs, integrated onto a host Silicon platform, with good performances. The same process has been adapted to develop an electrically-driven version of VCSELs: a preliminary study of the confinement section based on a InGaAs-BTJ is presented, together with the development of a mask set. Thanks to the development of the liquid crystals μ-cell technology (in collaboration with LAAS, IMT Atlantique et C2N), we realized a tunable photodiode at 1.55 μm, and a tunable VCSEL is currently under development. This work also presents the first realization of a 1.6 μm- emitting optically-pumped quantum dashes-based VECSELs, and its characterization in multi-mode and single-frequency regime. Finally, the realization of an experimental setup for the investigation of the coupling between two orthogonal eigenstates of a bi- frequency 1.54 μm-emitting SQW-VECSEL has been conceived and realized. This setup, which allowed the direct quantification of the coupling constant on such a device, in the near future will allow performing the same study on anisotropic structures like quantum dashes or quantum dots, with the objective of studying the inhomogeneous broadening effect observed in these gain regions
Viana, Carlos Eduardo. "Réalisation et caractérisation d'une technologie CMOS-TFT à basse température (<600° C)". Rennes 1, 2002. http://www.theses.fr/2002REN10148.
Testo completoSun, Qianying. "Conducting ceramics based on ZnO co-doped by (Al, Ti, Mg) : microstructure, electronic active defects and electrical properties". Thesis, Le Mans, 2020. http://www.theses.fr/2020LEMA1014.
Testo completoZnO based ceramics with appropriate doping elements show excellent electrical and optical properties such as high exciton binding energies, a modulated optical transparency and high electrical conductivities. Therefore, ZnO based conducting ceramics have been extensively investigated in the aim of their application as resistors, visitors, gas sensors, transparent electrodes, solar cell windows, piezoelectric, electro-optical and thermoelectric devices. The high conductivity of ZnO ceramics up to 0.1MS·m-1 is closely related to the doping elements along with the ceramic microstructure and the processing conditions with particular effects of grain boundaries, crystalline structure and structural disorder within the ceramics. Thus, the present thesis is devoted to the fabrication by sintering under defined conditions (sintering atmospheres, processes) of ZnO based ceramics co-doped by (Al, Ti, Mg) , the investigations and deep analysis of their related properties including crystalline structure, micro-structure and the electrical behavior. Exhaustive studies were developed on the doped ceramics by using structural methods (XRD, Raman), microscopy (TEM, SEM) and magnetic resonance (EPR, NMR) probing the local order and electronic active defects. The conductivity is adjusted by the nature of the structure influenced by the doping elements, the sintering atmosphere, and the sintering method. The correlation "Preparation - Structure - Conductivity" has been established to pave the way for the potential technological applications of highly conducting ZnO-based ceramics
Zhang, Liang. "Development of a CMOS pixel sensor for the outer layers of the ILC vertex detector". Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-01068494.
Testo completoKim, Ka-Hyun. "Hydrogenated polymorphous silicon : establishing the link between hydrogen microstructure and irreversible solar cell kinetics during light soaking". Phd thesis, Palaiseau, Ecole polytechnique, 2012. https://pastel.hal.science/docs/00/74/74/63/PDF/Thesis_Ka-Hyun_KIM.pdf.
Testo completoThis thesis is dedicated to hydrogenated polymorphous silicon (pm-Si:H) and solar cells based on this material. Pm-Si:H is a nanostructured thin film deposited by conventional PECVD method. The effects of various deposition parameters (gas flow ratio, pressure, RF power, Ts) on material properties were investigated in order to optimize its quality. The strategy was to combine a wide range of diagnostics (spectroscopic ellipsometry, hydrogen exodiffusion, SIMS, FTIR, AFM, etc. ). Due to the contribution of plasma synthesized silicon nanoparticles, the process condition of pm-Si:H shows the difference in contrary to a-Si:H deposition through ionized radicals. Studies on pm-Si:H deposition process allows to fabricate pm-Si:H PIN solar cells with a high initial efficiency of 9. 22 % and fill factor of 74. 1, but also demonstrate unusual light-induced effects, namely i) a rapid initial degradation, ii) an irreversible degradation, and iii) large macroscopic structural changes. Comprehensive investigation on the light-induced degradation kinetics of pm-Si:H PIN layer stacks reveals a pronounced hydrogen accumulation and delamination at the substrate/p-type layer interface under light-soaking, leading to macroscopic structural changes, e. G. , peel-off and solar cell area loss. We have found that a PIN structure leads to facilitated delamination during lightsoaking, which we attribute to hydrogen accumulation at the substrate/p-layer interface, while use of a NIP structure prevents the hydrogen accumulation and delamination. This lead us to fabricate pm-Si:H NIP solar cells showing a high stabilized efficiency of 8. 43 %, that shows a small (10 %) light-induced degradation after light-soaking for 500 hours
Labrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells". Phd thesis, Palaiseau, Ecole polytechnique, 2011. https://pastel.hal.science/docs/00/61/16/52/PDF/thesis_Martin_LABRUNE.pdf.
Testo completoCette thèse est le résultat d'un travail dédié à la croissance par PECVD de couches minces de silicium sur des substrats de silicium cristallin pour des applications photovoltaïques. L'objectif premier était d'obtenir une croissance amorphe sur toutes les orientations cristallines possibles afin de passiver efficacement les surfaces de silicium, prérequis indispensable à l'obtention de cellules solaires à hétérojonction efficaces. Nous avons en effet montré qu'une croissance épitaxiale, ou microcristalline, très faciles à obtenir sur (100) conduisait à une piètre passivation. Nous avons aussi montré que faire croître une couche de quelques nanomètres seulement d'alliage a-Si1-xCx:H permettait d'éviter, de manière robuste et reproductible la croissance épitaxiale, tout en permettant d'obtenir des passivations excellentes en déposant ensuite des couches minces d'a-Si:H. Une optimisation principalement basée sur des mesures d'ellipsométrie spectroscopique, de durée de vie effective (Sinton) et de charactéristiques courant-tension, nous ont permis d'obtenir des cellules à hétérojonctions a-Si:H/c-Si de 25 cm2 avec des VCO et des FF stables de 710 mV et 76 % respectivement sur des substrats lisses de (n) c-Si, dont les contacts étaient réalisés par sérigraphie de pâtes d'aluminium à basse température. Ce travail a aussi permis d'apporter la preuve du concept de cellules entièrement réalisées par voie sèche, i. E. Dont l'oxyde natif est gravé par un plasma de SiF4 au lieu d'une trempe HF. Enfin, la croissance épitaxiale de couches de silicium, non-dopé et dopé n et p, sur des surfaces orientées (100) a été étudiée par ellipsométrie et mesures par effet Hall. Nous avons été en mesure de produire des cellules cristallines dont l'émetteur de type P était épitaxié ainsi que des cellules de type p-i-n dont l'absorbeur était constitué par une couche non-dopée épitaxiée de silicium, déposé sur un substrat (100) très dopé au bore
Kim, Ka-Hyun. "Hydrogenated polymorphous silicon : establishing the link between hydrogen microstructure and irreversible solar cell kinetics during light soaking". Phd thesis, Ecole Polytechnique X, 2012. http://pastel.archives-ouvertes.fr/pastel-00747463.
Testo completoLabrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells". Phd thesis, Ecole Polytechnique X, 2011. http://pastel.archives-ouvertes.fr/pastel-00611652.
Testo completoBlanc, Maximin. "Optimisation d’une structure de conversion DC/DC réversible pour application aéronautique de forte puissance". Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT115.
Testo completoAvionics is intended to become more and more efficient in terms of energy saving thanks to increased efficiency of embedded system. Today, electricity is presented as the best energy vector compared to hydraulic or pneumatic. This is why current researches aim to focus on power electronic converters in order to meet the future electrical power demand in aircraft networks. This research project presents a DC/DC dual active bridge converter which is expected as the best candidate to meet the complex requirements of an aircraft environment, especially the high voltage dynamics. This persuaded us to study the structure and modulations which are explained and brought face to face with a 3,75kW demonstrator in order to validate the theoretical assumptions. Some food for thought is proposed to extend this work toward a three-port converter to interface multiple network as well as storage systems. The originality of this work is to build a new kind of active conversion system promoting break through technologies to prove it suits to aircraft specifications
Chelouche, Abdellatif. "Croissance et caractérisation de nano-cristaux fonctionnels de Si1-xGex éventuellement dopés dans diverses matrices diélectriques". Thesis, Strasbourg, 2018. http://www.theses.fr/2018STRAD019/document.
Testo completoSemiconductor nanostructures based on silicon and germanium have attracted enormous interest in the last years because of their potential applications in nanoelectronics and optoelectronics. In order to fabricate high performance devices with Si1-xGex nanocrystals, it is required to know and control their structural and electrical properties which is the aim of our study. For that, we used the ionic co-implantation of Si and Ge of different fluences in SiO2 matrices to synthesize the Si1-xGex NCx. Matrix effect on the properties of Si1-xGex NCx, have been also studied by the implantation of Ge in Si-rich SiOxNy thin films prepared by PECVD. Finally, the effect of the presence of dopants on the structural and electrical properties of Si1-xGex NCx has been studied by the co-implantation of dopants with Si and Ge in SiO2. The formation of NCx is induced by thermal annealing at 1000 or 1100 °C after the implantation of the desired elements (Si, Ge and possibly the dopant)
Marconi, Mathias. "Structures localisées temporelles dans les lasers à semi-conducteur à cavité verticale". Thesis, Nice, 2014. http://www.theses.fr/2014NICE4098/document.
Testo completoLocalized Structures (LS) appear in nonlinear dissipative media with large aspect-ratios where one or several solutions coexist in the parameters space. Although LS formation is a general phenomenon, their implementation in semiconductor lasers is of great interest due to the potential of LS for all-optical data processing. In fact, the basic idea consists in using LS as bits of information exploiting their property of addressability in a fast and small-sized medium. In this contribution, I will show the experimental and theoretical results obtained in Vertical Cavity Surface-Emitting Lasers (VCSELs). After a brief historical introduction on spatial LS emerging in the transverse profile of VCSELs, I will describe our method for the generation of temporal LS, that we observed in the frame of passive mode-locking when the VCSEL is coupled to a long external cavity closed by a fast saturable absorber, and vectorial LS, whose formation exploits the polarization degree of freedom of the VCSEL, which is submitted to the actions of a polarization-selective feedback (PSF) and a crossed-polarization reinjection (XPR)
Zhao, Wei. "Development of CMOS sensor with digital pixels for ILD vertex detector". Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAE004/document.
Testo completoThis thesis presents the development of CMOS pixel sensors (CPS) integrated with pixel-level ADCs for the outer layers of the ILD (International Large Detector) vertex detector. Driven by physics in the ILC (International Linear Collider), an unprecedented precision is required for the detectors. The priority of the sensors mounted on the outer layers is low power consumption due to the large coverage ratio of the sensitive area (~90%) in the vertex detector. The CPS integrated with ADCs is a promising candidate for this application. The architecture of column-level ADCs, exists but do not provide an optimized performance in terms of noise and power consumption. The concept of pixel-level ADCs has been proposed. Benefiting from the all-digital pixel outputs, pixel-level ADCs exhibit the obvious merits on noise, speed, insensitive area, and power consumption. In this thesis, a prototype sensor, called MIMADC, has been implemented by a 0.18 μm CIS (CMOS Image Sensor) process. The target of this sensor is to verify the feasibility of the CPS integrated with pixel-level ADCs. Three matrices are included in this prototype but with two different types of pixel-level ADCs: one with successive approximation register (SAR) ADCs, and the other two with single-slope (SS) ADCs. All of them feature a same pixel size of 35×35 μm2 and a resolution of 3-bit. In this thesis, the prototype is presented for both theoretical analyses and circuit designs. The test results of the prototype are also presented
Fu, Yunan. "Développement de capteurs à pixels CMOS pour un détecteur de vertex adapté au collisionneur ILC". Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00869940.
Testo completoSahni, Mohamed Omar. "Contribution à l'étude de techniques pour l'affinement spectral de lasers : application aux diodes à blocage de modes destinées aux télécommunications optiques cohérentes". Thesis, Rennes 1, 2018. http://www.theses.fr/2018REN1S121/document.
Testo completoOptical frequency combs obtained from mode-locked laser diodes are potential candidates for WDM networks. However, their lines exhibit usually a broad optical linewidth ( 1-100 MHz). Thus their use is incompatible for high order modulation formats WDM based systems. This thesis investigates one solution to overcome this limitation. It consists of using a feed-forward heterodyne technique to reduce the frequency noise of each comb-line and consequently their optical linewidths. In a first approach, the technique is applied to a single-mode laser. This allowed us to validate its proper working and to identify the intrinsic limits of the experimental device set up. The latter analysis enabled us to reveal that the minimum achievable frequency noise level by our system, corresponds to a 50 Hz intrinsic optical linewidth spectrum and a 1,6 kHz optical linewidth based on 10 ms observation time. This technique is then applied to an actively mode-locked laser diode demonstrating, at our system output, a 21-line optical frequency comb with intrinsic optical linewidths reduced to below 7 kHz. It is worth noting that 9 among them, exhibit sub-kHz linewidths. For an observation time of 10 ms, all lines share the same optical linewidth, almost equal to 37 kHz. We thus show that the timing jitter impacts the technique performances. We also highlight the relevance of such coherence level for coherent optical communication. Lastly, we study a laser frequency pre-stabilization technique based on a locking to an unbalanced fiber interferometer. When applied to a single-mode laser, the technique showed a reduction of its technical frequency noise, thus leading to a clear improvement of its integrated optical linewidth from 224 kHz to 37 kHz for 3 ms observation time. This first result provides a good support towards the exploration of mode-locked laser diodes potential for metrological applications
Severac, Fabrice. "Jonctions ultra-minces p+/n pour MOS "ultimes étude de l'impact des défauts sur la mobilité et l'activation du bore". Phd thesis, Université Paul Sabatier - Toulouse III, 2009. http://tel.archives-ouvertes.fr/tel-00390908.
Testo completoHamon, Gwenaëlle. "III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge)". Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLX004/document.
Testo completoCombining Silicon with III-V materials represents a promising pathway to overcome the ≈29% efficiency limit of a single c-Si solar cell. While the standard approach is to grow III-V materials on Si, this work deals with an innovative way of fabricating tandem solar cells. We use an inverted metamorphic approach in which crystalline silicon or SiGe is directly grown on III-V materials by PECVD. The low temperature of this process (<200 °C) reduces the usual thermal expansion problems, and growing the group IV material on the III-V prevents polarity issues.The realization of the final tandem solar cell made of SiGe/AlGaAs requires the development and optimization of various building blocks. First, we develop the epitaxy at 175°C of Si(Ge) on (100) Si substrates in an industrial standard RF-PECVD reactor. We prove the promising electrical performances of such grown Si(Ge) by realizing PIN heterojunction solar cells with 1.5µm epitaxial absorber leading to a Voc up to 0.57 V. We show that the incorporation of Ge in the layer increases the Jsc from 15.4 up to 16.6 A/cm2 (SiGe28%).Meanwhile, we develop the growth of AlGaAs solar cells by MOVPE and its process flow. We reach an efficiency of 17.6 % for a single Al0.22GaAs solar cell. We then develop the tunnel junction (TJ), essential part of a tandem solar cell with 2-terminal integration. We develop the growth of n-doped GaAs with DIPTe precursor to fabricate TJs with peak tunneling currents up to 3000 A/cm2, reaching state-of-the art TJs.Then, the hetero-epitaxy of Si on GaAs by PECVD is studied. c-Si exhibits excellent structural properties, and the first stages of the growth are investigated by X-ray diffraction with synchrotron beam. We find an unexpected behavior: the grown Si is fully relaxed, but tetragonal. While the GaAs lattice parameter is higher than silicon one, we find a higher out-of-plane Si parameter (a⏊) than in-plane (a//), contradicting the common rules of hetero-epitaxy. We find a strong correlation between this tetragonal behavior and the presence of hydrogen in the Si layer. We furthermore show that hydrogen also plays a strong role in GaAs: the doping level of GaAs is decreased by one order of magnitude when exposed to a H2 plasma, due to the formation of complexes between H and the dopants (C, Te, Si). This behavior can be recovered after annealing at 350°C.Finally, the last step of device fabrication is studied: the bonding. We successfully bonded an inverted AlGaAs cell, removed it from its substrate, and processed a full 2” wafer. We succeeded in growing our first tandem solar cells by growing thick layers (>1 µm) of Si on an inverted AlGaAs solar cells followed by a TJ. The bonding and process of this final device is then performed, leading, as a next step, to the electrical measurement of the very first tandem solar cell grown by inverted metamorphic growth of Si on III-V