Letteratura scientifica selezionata sul tema "Semi-conducteur à large bande"
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Articoli di riviste sul tema "Semi-conducteur à large bande"
Baili, G., M. Alouini, D. Dolfi e F. Bretenaker. "Laser semi-conducteur de classe A et de très faible bruit sur une large bande passante". Journal de Physique IV (Proceedings) 135, n. 1 (ottobre 2006): 165–66. http://dx.doi.org/10.1051/jp4:2006135042.
Testo completoNaudan, F., C. Nicolas e J. P. Huignard. "Filtrage des modes latéraux d'un laser semi-conducteur à cavité large par rétroinjection conjuguée". Annales de Physique 20, n. 5-6 (1995): 599–600. http://dx.doi.org/10.1051/anphys:199556030.
Testo completoPan, Hengxing, Danail Obreschkow, Cullan Howlett, Claudia del P. Lagos, Pascal J. Elahi, Carlton Baugh e Violeta Gonzalez-Perez. "Multiwavelength consensus of large-scale linear bias". Monthly Notices of the Royal Astronomical Society 493, n. 1 (25 gennaio 2020): 747–64. http://dx.doi.org/10.1093/mnras/staa222.
Testo completoPartamies, Noora, James M. Weygand e Liisa Juusola. "Statistical study of auroral omega bands". Annales Geophysicae 35, n. 5 (7 settembre 2017): 1069–83. http://dx.doi.org/10.5194/angeo-35-1069-2017.
Testo completoMarcati, Carmen Regina, Veronica Angyalossy e Ray Franklin Evert. "SEASONAL VARIATION IN WOOD FORMATION OF CEDRELA FISSILIS (MELIACEAE)". IAWA Journal 27, n. 2 (2006): 199–211. http://dx.doi.org/10.1163/22941932-90000149.
Testo completoLi, Zongrui, Jun Pan, Zhuoer Zhang, Mi Wang e Likun Liu. "MTCSNet: Mean Teachers Cross-Supervision Network for Semi-Supervised Cloud Detection". Remote Sensing 15, n. 8 (12 aprile 2023): 2040. http://dx.doi.org/10.3390/rs15082040.
Testo completoCabrera, Densil, Shuai Lu, Jonothan Holmes e Manuj Yadav. "Sound Reflections in Indian Stepwells: Modelling Acoustically Retroreflective Architecture". Acoustics 4, n. 1 (2 marzo 2022): 227–47. http://dx.doi.org/10.3390/acoustics4010014.
Testo completoAyres, J. F., R. D. Murison, A. D. Turner e S. Harden. "A rapid semi-quantitative procedure for screening hydrocyanic acid in white clover (Trifolium repens L.)". Australian Journal of Experimental Agriculture 41, n. 4 (2001): 515. http://dx.doi.org/10.1071/ea97069.
Testo completoDagbovie, Ayawoa S., e Jonathan A. Sherratt. "Pattern selection and hysteresis in the Rietkerk model for banded vegetation in semi-arid environments". Journal of The Royal Society Interface 11, n. 99 (6 ottobre 2014): 20140465. http://dx.doi.org/10.1098/rsif.2014.0465.
Testo completoOliveira Santos, Victor, Bruna Monallize Duarte Moura Guimarães, Iran Eduardo Lima Neto, Francisco de Assis de Souza Filho, Paulo Alexandre Costa Rocha, Jesse Van Griensven Thé e Bahram Gharabaghi. "Chlorophyll-a Estimation in 149 Tropical Semi-Arid Reservoirs Using Remote Sensing Data and Six Machine Learning Methods". Remote Sensing 16, n. 11 (24 maggio 2024): 1870. http://dx.doi.org/10.3390/rs16111870.
Testo completoTesi sul tema "Semi-conducteur à large bande"
Forster, Simon. "Nouveau matériau semi-conducteur à large bande interdite à base de carbures ternaires - Enquête sur Al4SiC4". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAI095.
Testo completoWide bandgap semiconductor materials are able to withstand harsh environments and operate over a wide range of temperatures. These make them ideal for many applications such as sensors, high-power and radio-frequencies to name a few.However, more novel materials are required to achieve significant power efficiency of various applications or to develop new applications to complement current wide bandgap semiconductors such as GaN and SiC.In this dissertation, three different methods are used to study one of these novelmaterials, aluminium silicon carbide (Al4SiC4): (1) ensemble Monte Carlo simulationsin order to study the electron transport properties of the novel ternary carbide, (2)experimental studies to determine its material properties, and (3) device simulationsof a heterostructure device made possible by this ternary carbide. All these methodsinterlink with each other. Data from each of them can feed into the other to acquire newresults or refine obtained results thus leading way to attractive electrical properties such as a bandgap of 2.78 eV or a peak drift velocity of 1.35×10 cm s .Ensemble Monte Carlo toolbox, developed in-house for simulations of Si, Ge, GaAs,AlxGa1−xAs, AlAs, and InSb; is adopted for simulations of the ternary carbide by adding anew valley transformation to account for the hexagonal structure of Al4SiC4. We predicta peak electron drift velocity of 1.35×107 cms−1 at electric field of 1400 kVcm−1 and a maximum electron mobility of 82.9 cm V s . We have seen a diffusion constant of 2.14 cm2s−1 at a low electric field and of 0.25 cm2s−1 at a high electric field. Finally, weshow that Al4SiC4 has a critical field of 1831 kVcmsemiconductor crystals are used that had previously been grown at IMGP, one by solution grown and the other by crucible melt. Three different experiments are performed on them; (1) UV, IR and Vis Spectroscopy, (2) X-ray Photo Spectroscopy, and (3) Two- and four-probe measurements where metal contact are grown on the crystals. Here we have found a bandgap of 2.78 ± 0.02 eV UV, IR and Vis Spectroscopy and a thick oxide layer on the samples using XPS. Unfortunately the Two- and four-probe measurements failed to give any results other than noise, most likely due to the thick oxide layer that was found on the samples.In the device simulations, a commercial software Atlas by Silvaco is utilized to predict performance of heterostructure devices, with gates lengths of 5 μm, 2 μm and 1 μm, made possible by the ternary carbide in a combination with SiC. The 5 μm gate length SiC/Al4SiC4 heterostructure transistor delivers a maximum drain current of 1.68×10−4 A/μm, which increases to 2.44×10−4 A/μm and 3.50×10−4 A/μm for gate lengths of 2 μm and 1 μm, respectively. The device breakdown voltage is 59.0 V which reduces to 31.0 V and to 18.0 V for the scaled 2 μm and the 1 μm gate length transistors. The scaled down 1 μm gate length device switches faster because of the higher transconductance of6.51×10−5 S/μmcomparedtoonly1.69×10−6 S/μmforthelargestdevice.Finally,a sub-threshold slope of the scaled devices is 197.3 mV/dec, 97.6 mV/dec, and 96.1 mV/dec for gate lengths of 5 μm, 2 μm, and 1 μm, respectively
Pacuski, Wojciech. "Spectroscopie optique de semi-conducteurs magnétiques dilués à large bande interdite, à base de ZnO et GaN". Phd thesis, Grenoble 1, 2007. http://www.theses.fr/2007GRE10310.
Testo completoThis work presents a magnetooptical study of diluted magnetic semiconductors (DMS) based on ZnO and GaN, doped with manganese, iron, and cobalt. Both host materials, ZnO and GaN, are wide band gap semiconductors with a wurtzite structure, a weak spin-orbit coupling and a strong electron-hole exchange interaction within the excitons. In the presence of a magnetic field, the magnetic ions induce in such materials a giant Zeeman effect with a complex behavior: excitons anti-cross, and not only the transition energies, but also the oscillator strengths are strongly affected by the giant Zeeman effect. On thin epitaxial layers grown on (0001) sapphire, we observed the giant Zeeman splitting of the A and B excitons, which are optically active in the Faraday configuration when the propagating light is parallel to the c-axis. The Zeeman splitting decreases with the temperature and increases non-linearly with the magnetic field, demonstrating a dependence on the magnetization of the localized spins. A quantitative analysis allows us to discuss the detailed behavior of the magnetization and to estimate the p-d exchange integral beta for the studied wide bandgap DMS. For the d^5 electronic configuration (Mn2+, and Fe3+) the magnetization follows a Brillouin function, whereas, for d7 or d4 of Co2+, and Mn3+, respectively, the spin orbit coupling and the trigonal crystal field lead to an anisotropic magnetization, consistent with that deduced independently from the analysis of intra-ionic optical transitions. We find a positive sign of beta for (Ga,Mn)N, and (Ga,Fe)N. In ZnO, the sign of the spin-orbit interaction, which determines the structure of the valence band, has been a matter of debate. Assuming that the valence band ordering in ZnO is Gamma_9, Gamma_7, Gamma_7 (this corresponds to usual, positive sign of the spin-orbit coupling), we find beta to be negative for (Zn,Co)O, and to be close to zero in (Zn,Mn)O. However, assuming the reversed valence band ordering, we find beta to be positive in both ZnO based DMS. The sign and the value of p-d exchange integrals determined from our magnetooptical measurements do not follow material trends in DMS and cannot be explained by models based on the virtual crystal approximation. This suggests that the p-d coupling in wide gap DMS is in the strong coupling regime, so that the nature of the observed giant Zeeman splitting is different from that in classical diluted magnetic semiconductors
Pacuski, Wojciech. "Spectroscopie optique de semi-conducteurs magnétiques dilués à large bande interdite, à base de ZnO et GaN". Phd thesis, Université Joseph Fourier (Grenoble), 2007. http://tel.archives-ouvertes.fr/tel-00296634.
Testo completoOn a mesuré expérimentalement le splitting Zeeman géant des excitons A et B avec des couches epitaxiées sur saphir (0001) et une propagation de la lumiere parallele a l'axe c du cristal et au champ magnétique (configuration Faraday). Le splitting Zeeman géant diminue avec la température et augmente non linéairement avec le champ magnétique en accord avec l'aimantation calculée des spins isolés. Une analyse quantitative nous a permis d'analyser les propriétés magnétiques et de mesurer les intégrales d'échange pour l'ensemble des matériaux étudiés. Pour des ions avec une configuration d5 (Mn2+ et Fe3+), l'aimantation suit une fonction de Brillouin, mais pour les configurations d7 et d4 (Co2+ ou Mn3+) l'interaction spin-orbite et le champ cristallin trigonal induisent une aimantation anisotrope, en accord avec l'analyse des transitions internes des ions mesurées en spectroscopie infrarouge. Pour (Ga,Mn)N, et (Ga,Fe)N, nous avons trouvé un signe positive pour l'intégrale d'échange entre trous et spins localisés (beta). En supposant une symétrie de la bande de valence dans ZnO correspondant a une interaction spin-orbite positive (Gamma_9, Gamma_7, Gamma_7), nous trouvons un signe négative de beta pour (Zn,Co)O, et beta est de pres de zéro pour (Zn,Mn)O. Toutefois, dans l'hypothese avec spin-orbite négative, nous trouvons un signe positif de beta. Les signes et les valeurs des intégrales d'échange déterminées a partir de nos mesures magnéto-optiques ne peuvent pas etre expliqués par des tendances matérielles et des modeles basés sur l'approximation de cristal virtuel. Ceci suggere que l'échange p-d en DMS a large bande interdite, soit dans le régime de couplage fort, et la nature de splitting Zeeman géant observé est différente qu'en semi-conducteurs magnétiques dilués classiques.
Fisne, Christophe. "Métasurfaces actives pour applications large bande". Thesis, Toulouse, INPT, 2020. http://www.theses.fr/2020INPT0086.
Testo completoMetasurfaces have particular electromagnetic properties such as unusually refractive index, electromagnetic band gap and high impedance surface. Also named Artificial Magnetic Conductor (AMC), they are a focus of interest in the antennas field. Indeed, greater isolation between radiating elements and miniaturization of antenna with reflective plan can be achieved with those structures. Although they suffer from poor bandwidth (less than 10%), which make them inconsistent with wideband applications. To overcome this frequency limitation, implementation of non-Foster active circuits paves the way to extend the bandwidth of high impedance surfaces. In this respect, the thesis goal is to conceive a wideband high-impedance reflector with the integration of non-Foster circuits. The aimed bandwidth is [0.5 GHz; 1.5 GHz], that is to say 100% of the relative bandwidth. In this thesis, a synthesis methodology to realize a wideband AMC is proposed: an AMC reflector under normal incidence is conceived from a metasurface connected to a non-Foster circuit. The circuit is loaded with an optimized impedance. Analytic relationships between the reflection coefficient and the load impedance of the non-Foster circuit are given. Firstly, a metasurface working with linear polarizations and where the connection of the non-Foster circuit is offset. This topology protects the circuit against the perturbations due to the incident electromagnetic waves. Moreover, a study to extend metasurface functioning to circular polarization is under way. Then, a non-Foster circuit of type Negative Impedance Converter (NIC) is designed. A particular topology of circuit is selected in order to simplify the realization. It has been conceived using only components “off-the-shelf” and potentiometers which control the input impedance. Finally, the circuits load is calculated to obtain the attended wideband AMC behavior according with the real performance of the non-Foster circuit
Bouffaron, Renaud. "Modélisation et Réalisation de Réseaux Sub-Longueur d'Onde :Application au Contrôle de la Réflectivité Large Bande, Large Incidence". Phd thesis, Université Paul Cézanne - Aix-Marseille III, 2008. http://tel.archives-ouvertes.fr/tel-00353626.
Testo completoRegnat, Guillaume. "Onduleur à forte intégration utilisant des semi-conducteurs à grand gap". Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT050/document.
Testo completoWide-band-gap (WBG) semiconductors (SiC and Gan) offer interesting characteristics to realize high density power electronics converters. Conventional packaging used for silicon devices is no more adapted for those now components. Development of dedicated packaging for WBG devices is absolutely required. This PhD thesis presents a new 3D package based on Printed Circuit Board (PCB) industrial process. The module architecture is based on “Power Chip On Chip” concept which allows reducing electromagnetic perturbations. PCB fabrication process offers high design flexibility in three dimensions and allows removing wire bonding to interconnect power die and package. The power module design process is buit on multi-physics design tools in the aim to quantify electromagnetic and thermal behavior of the module. Furthermore, several optimization parameters are highlighted. A power module prototype, with four commutation cells in parallel based on SiC MOSFET, has been produced thanks to industrial facilities. Tests realized on new power module confirm the validity of the concept but furthermore to highlight critical technological parameters to realize an industrial power module
Grelier, Michael. "Miniaturisation des antennes large bande à l'aide de matériaux artificiels". Phd thesis, Télécom ParisTech, 2011. http://pastel.archives-ouvertes.fr/pastel-00574620.
Testo completoRaboin, Jean-Christophe. "Complexes de métaux de transition pour la photosensibilisation de semi-conducteurs à large bande interdite". Metz, 1999. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/1999/Raboin.Jean_Christophe.SMZ9940.pdf.
Testo completoVigué, Florence. "Optoélectronique visible et ultraviolette à base de semi-conducteurs II-VI à large bande interdite". Nice, 2001. http://www.theses.fr/2001NICE5632.
Testo completoOver the past few years, there has been a great deal of work focused on wide bandgap semiconductors for their applications in electronics and optoelectronics. Main goals are the fabrication of ultraviolet (UV) photodetectors and blue and UV laser diodes. In this work, II-VI compounds based on zinc selenide (ZnSe) and zinc oxyde (ZnO) are studied for these purposes. UV photodetectors based on ZnSe and especially on (Zn,Mg,Be,Se) quaternary alloys are first reported. Three types of structures have been studied which are p-i-n, Schottky barrier and metal-semiconductor-metal photodiodes. With these different devices, high maximum spectral responses, important UV/visible contrasts and low noise levels are achieved. This work thus demonstrates the potential of ZnSe and (Zn,Mg,Be,Se) compounds for UV detection. Growth of ZnO on sapphire substrate has also been studied. It is demonstrated that two different growth modes can be achieved depending on experimental conditions. Two-dimensional growth mode layers exhibit a mosaic structure with columnar subgrains delineated by vertical dislocations whereas the three-dimensional growth mode generates numerous interactions between dislocations and leads to higher structural quality films. A total dislocation density of 3-5x109 cm-2 is obtained in that case
Kaddour, Darine. "Conception et réalisation de filtres RF passe-bas à structures périodiques et filtres Ultra Large Bande, semi localisés en technologie planaire". Phd thesis, Grenoble 1, 2007. http://www.theses.fr/2007GRE10095.
Testo completoLn recent years, extensive research and development efforts have been put into exploiting planar filters for their potential qualities of low cost, tiny weight and high degree of integration. The aim of the research work presented in this manuscript is the design and the realization of selective and miniaturized planar filters. A new topology of compact low-pass filter with periodic structures, constituted by a transmission line loaded by SMT capacitors, is proposed. A rigorous design method for the low-pass filter is also implemented. The measurements of the low-pass filters, realized ne al' to 1 GHz in a CPW technology, in good agreement with simulations demonstrated interesting electrical proprieties of rejection, matching and spurious suppression. The validity of this topology is also investigated for higher frequencies with the realization of a low-pass filter in the K-band. Several capacitor's characterization approaches were also investigated. The implementation of capacitors in a low pass filter with periodic structure carried out constitutes the most precise way to characterize capacitors. A new topology of Ultra Wide Band band-pass filters, based on the combination of a high pass filter with short circuited stubs and a low pass filter with capacitively loaded lines, is proposed, The measurements of the prototype filters realized in a microstrip teclmology, in good agreement with simulations, show interesting proprieties of selectivity, miniaturization and spurious suppression
Libri sul tema "Semi-conducteur à large bande"
1921-, Bhargava Rameshwar Nath, a cura di. Properties of wide bandgap II-VI semiconductors. London, U.K: INSPEC, Institute of Electrical Engineers, 1997.
Cerca il testo completoJ, Pearton S., a cura di. Wide bandgap semiconductors: Growth, processing and applications. Park Ridge, N.J: Noyes Publications, 2000.
Cerca il testo completoProperties of Wide Bandgap Ii-VI Semiconductors (E M I S Datareviews Series). Institution of Electrical Engineers, 1997.
Cerca il testo completoLitvinov, Vladimir. Wide Bandgap Semiconductor Spintronics. Jenny Stanford Publishing, 2016.
Cerca il testo completoWide Bandgap Semiconductor Spintronics. Taylor & Francis Group, 2016.
Cerca il testo completoLitvinov, Vladimir. Wide Bandgap Semiconductor Spintronics. Jenny Stanford Publishing, 2016.
Cerca il testo completoWide Bandgap Semiconductor Spintronics. Jenny Stanford Publishing, 2024.
Cerca il testo completoCharacterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.
Cerca il testo completoWang, Fei, Zheyu Zhang e Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.
Cerca il testo completoOhshima, Takeshi, Hiroshi Yano, Kazuma Eto, Shinsuke Harada e Takeshi Mitani. Silicon Carbide and Related Materials 2019. Trans Tech Publications, Limited, 2020.
Cerca il testo completoCapitoli di libri sul tema "Semi-conducteur à large bande"
Benabdelouahab, Tarik, Hayat Lionboui, Rachid Hadria, Riad Balaghi, Abdelghani Boudhar e Bernard Tychon. "Support Irrigation Water Management of Cereals Using Optical Remote Sensing and Modeling in a Semi-Arid Region". In Geospatial Technologies for Effective Land Governance, 124–45. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-5939-9.ch008.
Testo completoBrocx, Margaret, Vic Semeniuk, Tom J. Casadevall e Dan Tormey. "Volcanoes: Identifying and Evaluating Their Significant Geoheritage Features from the Large to Small Scale". In Updates in Volcanology - Transdisciplinary Nature of Volcano Science. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97928.
Testo completoOrdóñez, Diego, Carlos Dafonte, Bernardino Arcay e Minia Manteiga. "Connectionist Systems and Signal Processing Techniques Applied to the Parameterization of Stellar Spectra". In Soft Computing Methods for Practical Environment Solutions, 187–203. IGI Global, 2010. http://dx.doi.org/10.4018/978-1-61520-893-7.ch012.
Testo completoAtti di convegni sul tema "Semi-conducteur à large bande"
Partovi, Afshin, Alan Kost, Elsa m. Garmire, George C. Valley e Marvin B. Klein. "Band edge photorefractive effect in GaAs". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mcc1.
Testo completoPartovi, A., A. M. Glass, D. H. Olson, G. J. Zydzik, K. T. Short, R. D. Feldman e R. F. Austin. "High sensitivity resonant photorefractive effect in semi-insulating CdZnTe/ZnTe multiple quantum wells". In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/pmed.1991.mc1.
Testo completoChen, Cheng, e James M. Ricles. "Experimental Evaluation of an Adaptive Actuator Control Scheme for Real-Time Tests of Large-Scale Magneto-Rheological Damper Under Variable Current Inputs". In ASME 2009 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. ASMEDC, 2009. http://dx.doi.org/10.1115/smasis2009-1302.
Testo completoZhang, Qinqiang, Meng Yang, Ken Suzuki e Hideo Miura. "Highly Sensitive Strain Sensor Using Dumbbell-Shape Graphene Nanoribbon". In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-70318.
Testo completoMartinazzo, Ana, e Nina Sumiko Tomita Hirata. "Multiband image classification of astronomical objects". In XXXII Conference on Graphics, Patterns and Images. Sociedade Brasileira de Computação - SBC, 2019. http://dx.doi.org/10.5753/sibgrapi.est.2019.8314.
Testo completoSimos, Alexandre N., Joa˜o V. Sparano, Jose´ A. P. Aranha e Vini´cius L. F. Matos. "2nd Order Hydrodynamic Effects on Resonant Heave, Pitch and Roll Motions of a Large-Volume Semi-Submersible Platform". In ASME 2008 27th International Conference on Offshore Mechanics and Arctic Engineering. ASMEDC, 2008. http://dx.doi.org/10.1115/omae2008-57430.
Testo completoWatanuki, Keiichi, Tetsuhiro Suzuki, Yusuke Osawa, Kazunori Kaede e Shinsuke Kazama. "Automatic Generation of AI-based Cancer Pathology Data and Highly Accurate Colorectal Cancer Pathology Diagnosis Support". In 13th International Conference on Applied Human Factors and Ergonomics (AHFE 2022). AHFE International, 2022. http://dx.doi.org/10.54941/ahfe1001787.
Testo completoHan, Sang-Kook, Ramakant Srivastava e Ramu V. Ramaswamy. "Determination of refractive index of MBE grown InGaAlAs from composition". In Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ipr.1991.tud14.
Testo completoZiari, Mehrdad, William H. Steier, Marvin B. Klein e Sudhir Trivedi. "Photorefractive properties and alternating electric field gain enhancement of vanadium-doped cadmium telluride and related compounds". In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/pmed.1991.tua6.
Testo completoZhao, Qichao, Ran Yang, Xiaoqing Zhu, Chunxiao Li, Xin Gao, Yanan Li, Haiyang Yu et al. "Systematic Comparison of Signal Quality in Portable and Wearable Wireless EEG Devices: Methods and Standards". In 15th International Conference on Applied Human Factors and Ergonomics (AHFE 2024). AHFE International, 2024. http://dx.doi.org/10.54941/ahfe1004813.
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