Tesi sul tema "RF sputtering"
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1
Prasankumar, Rohit Prativadi 1975. "Novel saturable absorber devices grown using RF and magnetron RF sputtering". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80599.
Testo completoAbstract (sommario):
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.Includes bibliographical references (leaves 81-85).
by Rohit Prativadi Prasankumar.
S.M.
2
Subramanian, Senthilnathan. "Characterization of cadmium zinc telluride solar cells by RF sputtering". [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000429.
Testo completo
3
Silva, Adilson Oliveira da. "Estudo da obtenção de filmes de anatásio utilizando rf-magnetron sputtering". Florianópolis, SC, 2000. http://repositorio.ufsc.br/xmlui/handle/123456789/78441.
Testo completoAbstract (sommario):
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico.Made available in DSpace on 2012-10-17T14:24:13Z (GMT). No. of bitstreams: 0Bitstream added on 2014-09-25T18:14:24Z : No. of bitstreams: 1 171844.pdf: 210584418 bytes, checksum: d9e7ff65b380888e7b8f6e1f64840d9e (MD5)
Filmes finos de TiO2 foram preparados pela técnica de RF-magnetron sputtering utilizando-se um alvo de rutilo. As camadas foram depositadas sobre substratos de Silício monocristalino e sílica vítrea, mantidos a temperatura ambiente. Primeiramente foi verificado a influência da fração molar de oxigénio na formação da estrutura dos filmes de TiO2. As frações testadas foram 25, 37,5 e 50 % de O2 na mistura gasosa oxigênio/argônio. Após o processo de deposição todas as amostras tiveram suas estruturas analisadas e indicaram a formação de camadas de filmes amorfos. Entretanto as mesmas amostras, após tratamentos térmicos nas temperaturas de 400 e 1000 °C, desenvolveram filmes cristalinos com a presença unicamente da fase rutilo. Dessa forma foi observado que as variações das doações molares de oxigênio não foram determinantes para a formação de filmes com a fase anatásio. Numa segunda etapa, SiO2 foi adicionada com impurezas na camada dos filmes- de TiO2. Placas de sílica vítrea foram disposta sobre o alvo de rutilo de forma a produzirem filmes com diferentes teores de sílica. As análises químicas das superfícies indicaram a obtenção de amostras de TiO2 com 15, 33 e 49 % de SiO2. Após o processo de deposição os filmes também apresentaram a formação de uma fase amorfa, porém as camadas depositadas sobre substratos de silício desenvolveram a fase anatásio após o tratamento térmico. Nas amostras de TiO2 com 15% SiO2 a fase anatásio cresceu juntamente com a fase rutilo, mas nos filmes com teores de 33 e 49% de sílica apenas o crescimento a fase anatásio foi observado. As mesmas formações não foram identificados nos- filmes depositados sobre substratos de sílica vítrea. Nesses substratos a única fase desenvolvida foi a do rutilo. Sendo assim é possível observar que a presença sílica tem uma grande influência nas transformações de fases dos filmes de TiO2, porém somente a sua adição não é suficiente para garantir a formação da fase anatásio. A interação da camada dos filmes com o substrato é também um dos fatores determinantes da estrutura final dos filmes de TiO2. Por fim verificou-se que a formação de filmes de TiO2 com deficiência em oxigênio podem favorecer a nucleação e o crescimento da fase anatásio.
4
Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS". Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.
Testo completoAbstract (sommario):
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective coatings is of great importance. In this study we investigate some of the mechanical, chemical and physical properties of the SiCN thin films. Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a RF magnetron sputtering system using a powder pressed SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties such as hardness and reduced modulus of the SiCN films. Surface morphology of the films was characterized by using atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering. Further, the films were annealed in dry oxygen ambient in the temperature range of 400 – 900°C and characterized using XPS to investigate the chemical composition and oxidation kinetics at each annealing temperature. The surface roughness of these films was studied as a function of annealing temperature and film composition with the help of a "Veeco" optical profilometer. Nano-indentation studies indicated that the hardness and the reduced modulus of the film are sensitive to the N2/Ar ratio of gas flow during sputtering. AFM studies revealed that the films become smoother as the N2/Ar ratio is increased. XPS data indicated the existence of C-N phases in the as-deposited films. The study of oxidation kinetics of RF sputter deposited SiCN thin films, using XPS, suggest that N2 co-sputtering helps to suppress the formation of a surface oxide, by allowing un-bonded Si to bond with N and C inside the vacuum chamber as opposed to bonding with O in atmosphere.M.S.M.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Mechanical Engineering
5
Treharne, Robert E. "RF magnetron sputtering of transparent conducting oxides and CdTe/CdS solar cells". Thesis, Durham University, 2011. http://etheses.dur.ac.uk/3310/.
Testo completoAbstract (sommario):
The applicability of radio frequency magnetron sputtering (RFMS) for the development of: a) transparent conducting oxides (TCOs) and b) fully sputtered CdTe/CdS solar cells is demonstrated. TCO materials - In2O3:Sn (ITO), SnO2:F (FTO), ZnO:Al (AZO) and ZnO:F (FZO) - were investigated with respect to key deposition parameters in an attempt to generate films with low resistivities and high transmittances. Minimum resistivity values of 1.2 x 10^-4 Ohm.cm and 4.7 x 10^-4 Ohm.cm were achieved for films of ITO and AZO respectively while maintaining transmittances of > 80%. Such films are viable for incorporation into CdTe based solar cells as front contact layers. A model for the dielectric permittivity for TCO materials is presented based on classical Lorentz and Drude models of bound and free electron behaviour, and a model of inter-band transitions that describes behaviour in the vicinity of a direct band-gap. The model is successfully applied to the tting of transmittance data for TCO films and used to extract opto-electronic properties. The results of a fully-sputtered CdTe prototype device structure are presented; a maximum conversion eciency of 12.5% is achieved. Further investigations, via XRD, into the effect of sputter pressure on CdTe films indicates that a 10 mTorr Ar pressure is best for optimising device effciency. J-V-T and C-V measurements show that at room temperature, current transport in the sputtered devices is dominated by Shockley-Read-Hall recombination and that the CdTe layer, under zero applied bias, is fully depleted with a carrier concentration of 4 x 10^14 cm^-3. Cross-sectional SEM and TEM show that both CdS and CdTe layers undergo significant recrystallisation during post-deposition CdCl2 treatment. A multi-layer optical model of transmittance is developed based on a transfer matrix method and using optical data acquired from spectrophotometry and ellipsometry. The model is used to predict the fraction of transmitted light received by the CdTe absorber in a fully sputtered device and it is indicated that through further thinning of the CdS layer, to below 50 nm, significant gains in transmittance, upwards of 20%, may be achieved. It is established that the further development of sputtered CdTe/CdS solar cells requires a significant improvement in the uniformity of the current CdCl2 based post-deposition treatment.
6
Ramalhadeiro, Rui Miguel Martins. "Estudo estrutural e ótico de filmes de ZnO/MgO por RF-sputtering". Master's thesis, Universidade de Aveiro, 2012. http://hdl.handle.net/10773/9300.
Testo completoAbstract (sommario):
Mestrado em FísicaEste trabalho tem como objetivo o estudo estrutural e ótico de filmes de óxido de Zinco (ZnO) em substrato de óxido de Magnésio (MgO), em função das condições de crescimento por RF-sputtering (pulverização catódica de rádiofrequência). As condições de pressão parcial de O2 e temperatura do substrato são variáveis que influenciam bastante o crescimento de filmes finos de ZnO. A escolha do substrato cúbico de MgO, reside no facto deste material além de ser um óxido, possuir arranjo atómico não polar que poderá favorecer o crescimento de filmes finos de ZnO com orientações segundo o plano-m. Na análise estrutural foi usado difração de raio-X, mapas de espaço recíproco, figura de pólos por High Resolution X-Ray Difraction, “HRXRD” e espetroscopia de Raman permitindo observar a orientação dos planos de crescimento e a relação epitaxial entre o filme e o substrato. Na caracterização ótica é apresentada medidas de fotoluminescência em que se observa emissão excitónica para valores mais elevados de energia, assim como bandas largas não estruturadas para valores inferiores.
The aim of this work is the structural and optical characterization of samples of zinc oxide (ZnO) on substrates of magnesium oxide (MgO) in relation to growth conditions by RF-sputtering. The conditions for O2 partial pressure and substrate temperature are variables that influence the growth of ZnO thin films. The choice of cubic MgO substrates, besides being an oxide, possesses atomic non-polar arrangements that could favor the growth of ZnO thin films with m-plane orientations. In structural analysis was used X-ray diffraction, reciprocal space maps, pole figure by High Resolution X-Ray Diffraction, "HRXRD" and Raman spectroscopy allowing to observe the orientation of growth plans and the epitaxial relationship between film and substrate. In optical analyses was used photoluminescence as technique and it is observed for higher values of energy excitonic emission as well as unstructured broad bands for lower energy values.
7
Peres, Marco António Baptista. "Estudo de defeitos em filmes finos de ZnO depositados por Rf-sputtering". Doctoral thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/13983.
Testo completoAbstract (sommario):
Doutoramento em Engenharia FísicaNeste trabalho foram estudados diferentes filmes finos de ZnO depositados por Rf-Sputtering. Filmes finos de ZnO com diferentes propriedades óticas foram obtidos intencionalmente variando os parâmetros de deposição. De modo a correlacionar as propriedades óticas e estruturais com os parâmetros de deposição, foram utilizadas diferentes técnicas de caracterização avançadas, tais como, fotoluminescência, microscopia de força atómica, difração de raios- X e retrodispersão de Rutherford. Este trabalho centra-se na discussão e análise das bandas de emissão vermelha, verde e azul, comumente observadas em amostras de ZnO e cuja natureza tem sido objeto de grande controvérsia na literatura. A utilização de técnicas de caracterização estrutural revelou-se de extrema importância para correlacionar as propriedades físicas de composição e estrutura com os centros óticos observados nos filmes. Nesta base, foram propostos e discutidos diferentes modelos de recombinação ótica associados à qualidade estrutural dos filmes, considerando modelos de camadas que descrevem a heterogeneidade lateral e em profundidade. Desta análise verificou-se a presença de heterogeneidade estrutural e composicional, que aumenta a complexidade na compreensão da correlação dos parâmetros de deposição com as propriedades óticas dos filmes. Foi discutida a limitação e validade de diferentes modelos tendo em conta a presença da heterogeneidade existente nos filmes estudados. Este trabalho contribui assim para uma melhor compreensão da complexidade de interação dos diferentes defeitos e o seu efeito nas propriedades óticas, nomeadamente o papel dos defeitos de interface, na superfície, nas fronteiras de grão e junto ao substrato.
This thesis focuses on the study of different ZnO thin films deposited by Rf- Sputtering. Thin films deposited under different conditions were produced to deliberately induce distinct optical active centres. To correlate the optical and structural properties, different characterization techniques were used such as, Photoluminescence, X-ray Diffraction, Atomic Force Microscopy and Rutherford Backscattering Spectroscopy. The main purpose of this study is the investigation and discussion of the controversial red, green, and blue emission bands, often observed in ZnO samples. The structural and compositional characterization techniques showed to be of extreme importance to correlate the luminescence with the samples morphology, composition and structure. Based on temperature and excitation dependent photoluminescence models for the recombination centres were proposed and discussed. Considering layer models, the role of the samples heterogeneity in the optical properties was explored. This analysis confirms the presence of a compositional and structural heterogeneity, which increases the complexity of potential correlations between the deposition parameters, structural properties and optically active defects. The validity and limitation of the proposed models was studied and discussed. This thesis intends to contribute to a higher comprehension of the complexity of the interaction between different defects, and its effects on the optical properties.
8
Campbell, Bryce W. "Preparation and characterization of lithium thiogermanate thin films using RF magnetron sputtering". [Ames, Iowa : Iowa State University], 2006.
Cerca il testo completo
9
Bosco, Giácomo Bizinoto Ferreira 1987. "Photoluminescence of Tb3+ in a-Si3N4:H prepared by reactive RF-Sputtering and ECR PECVD = Fotoluminescência de Tb3+ em a-Si3N4:H preparado por RF-Sputtering reativo e ECR PECVD". [s.n.], 2017. http://repositorio.unicamp.br/jspui/handle/REPOSIP/322722.
Testo completoAbstract (sommario):
Orientador: Leandro Russovski TesslerTese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
Made available in DSpace on 2018-09-01T20:54:28Z (GMT). No. of bitstreams: 1 Bosco_GiacomoBizinotoFerreira_D.pdf: 9507140 bytes, checksum: 4980b29f48f98f8ff97e8a0a37b7577e (MD5) Previous issue date: 2017
Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclotrônica de elétrons (ECR PECVD) e por pulverização catódica reativa em radiofrequência (reactive RF-Sputtering) ¿ com o propósito de avançar a investigação em fabricação de novos materiais e dos mecanismos da emissão de luz de íons de Tb quando diluídos em materiais baseados em silício. A fotoluminescência (PL) atribuída aos filmes de a-SiNx:H foi investigada em termos das condições de deposição e correlacionadas com suas propriedades estruturais e de recozimento pós-deposição. Entre as propriedades caracterizadas estão: estequiometria, taxa de deposição, índice de refração, coeficiente de extinção, bandgap ótico E04, concentração de térbio e vizinhança química presente ao redor de íons Tb3+. Concentrações de Tb da ordem de 1.8 at.% ou 1.4×?10?^21 at/cm^3 foram obtidas em amostras crescidas por Sputtering enquanto que concentrações de 14.0 at.%, ou da ordem ?10?^22 at/cm^3, puderam ser obtidas em amostras crescidas por ECR PECVD. Em Sputtering, a incorporação de Tb varia linearmente com a área recoberta por pastilhas de Tb4O7 em pó, enquanto que em PECVD, a incorporação de Tb é inversamente proporcional e pode ser ajustada sensivelmente pelo fluxo de gás SiH4. Forte emissão de luz, atribuída às transições eletrônicas em Tb3+ (PL do Tb), foi obtida em filmes não-recozidos que possuíam bandgap estequiométrico (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). Espectros de PL do Tb não mostraram mudanças significativas no formato e na posição dos picos de emissão devido a alterações na temperatura de recozimento, nas condições de deposição ou entre amostras crescidas por diferentes técnicas de deposição. Entretanto, esses parâmetros influenciaram fortemente a intensidade da PL do Tb. Estudos da estrutura fina de absorção de raios-X (XAFS) em filmes crescidos por sputtering mostraram a estabilidade da vizinhança química ao redor dos íons Tb3+ mesmo em altas temperaturas (1100ºC). Investigações por sonda atômica tomográfica (APT) não encontraram formação de nanoclusters envolvendo ou não Tb, mesmo após recozimentos em altas temperaturas. Isso sugere que a excitação de Tb3+ deve ocorrer através da própria matriz hospedeira amorfa e não por mudanças no campo cristalino e, portanto, na força de oscilador das transições eletrônicas do Tb3+. Caracterização da densidade de ligações Si-H por espectroscopia infravermelha a transformada de Fourier (FTIR) em filmes recozidos em diferentes temperaturas foi relacionada com a intensidade da PL do Tb. Ela mostra que um decréscimo na densidade das ligações Si-H, que está relacionada a um aumento na concentração de ligações pendentes de Si (Si-dbs), resulta em filmes com maior intensidade na PL do Tb. Portanto, isso sugere que a excitação de Tb3+ parece acontecer através de transições envolvendo Si-dbs e estados estendidos, o que é consistente com o modelo de excitação Auger por defeitos (DRAE)
Abstract: This work offers optical and structural characterization of terbium (Tb) doped hydrogenated amorphous silicon nitrides thin films (a-SiNx:H) grown by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) and reactive RF-Sputtering with the purpose of advancing the investigation in fabrication of novel materials and the mechanisms of light emission of Tb ions when embedded in Si-based materials. Photoluminescence (PL) of a-SiNx:H films were investigated and correlated with the deposition conditions, structural properties, and post-deposition thermal treatments (isochronal annealing under flow of N2). Among the characterized properties are: film stoichiometry, deposition rate, refractive index, extinction coefficient, optical bandgap, terbium concentration, and the chemical neighborhood around Tb ions. Tb concentrations of about 1.8 at.% or 1.4×?10?^21 at/cm^3 have been achieved in Sputtering system while concentrations of 14.0 at.%, or about ?10?^22 at/cm^3, could be achieved in ECR PECVD samples. In Sputtering, Tb incorporation varies linearly with the covered area of the Si target by Tb4O7 powder pellets, while in PECVD, Tb incorporation is inversely proportional to and can be sensitively adjusted through SiH4 gas flow. Bright PL attributed to Tb3+ electronic transitions (Tb PL) were obtained in as-deposited films with stoichiometric bandgaps (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). The Tb PL spectra did not show any significant change in shape and in PL peak positions due to alterations in annealing temperature, deposition conditions or due to the used deposition method. However, these parameters strongly affected Tb PL intensity. Studies of X-ray absorption fine structure (XAFS) in Sputtering grown films show the stability of the chemical neighborhood around Tb3+ under annealing conditions even after thermal treatments at temperatures as high as 1100ºC. Atom probe tomography (APT) investigation also found no formation of nanoclusters of any type (involving Tb ions or not) after high temperature annealing treatments suggesting that Tb3+ excitation should come from the amorphous host matrix itself and not by changes in crystal field and thus in oscillator strength of Tb3+ electronic transitions. Fourier transform infrared spectroscopy (FTIR) characterization of Si-H bond density in films treated atin different annealing temperatures were crossed correlated with Tb PL intensity. It shows that a decrease in Si-H bond density, related to increase in Si dangling bonds (Si-dbs) concentration, results in greater Tb PL intensity. Thus, it suggests that excitation of Tb3+ happens through transitions involving silicon dangling bonds and extended states, consistent with the defect related Auger excitation model (DRAE)
Doutorado
Física
Doutor em Ciências
142174/2012-2
010308/2014-08
CNPQ
CAPES
10
Gignac, Lynne Marie. "Processing and characterization of RF sputtered alumina thin films". Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184611.
Testo completoAbstract (sommario):
Thin films of alumina were deposited on ferrite (NiₓZn₍₁₋ₓ₎Fe₂O₄), glass, single crystal silicon and graphite substrates by RF sputtering. Though standard, amorphous Al₂O₃ films are readily soluble in hot phosphoric acid, these sputtered films exhibited only reluctant etchability by the acid. Experiments were initially performed to understand the parameters in the sputtering process which were influential in the formation of unetchable films. The results showed that a high concentration of water vapor or oxygen molecules in the sputtering chamber during deposition was the most significant variable controlling the growth of unetchable films. The films were categorized according to their degree of solubility in H₃PO₄ and were examined using various microanalytical characterization techniques. TEM analysis directly showed the existence of crystalline γ-Al₂O₃ in the film at the film-substrate interface. The γ-Al₂O₃ phase grew with a preferred orientation coincident with the substrate orientation--as in heteroepitaxial growth. The occurrence of this film phase was related to the oxygen partial pressure, the substrate material, and the substrate temperature and was believed to be the cause of the film's incomplete etching behavior.
11
Awan, Shamshad Akhtar. "Electrical properties of RF magnetron-sputtered insulating silicon nitride thin films". Thesis, Keele University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311646.
Testo completoAbstract (sommario):
Si3N4 thin films were prepared by RF magnetron sputtering using N2 or Ar as the sputtering gas. The films were amorphous, with the deposition rate for Ar-sputtered films increasing with RF power and Ar pressure. Sandwich samples having both Al and Au electrodes were prepared. Capacitancevoltage measurements indicated that the contacts for Nj-sputtcred samples were ohmic, while Ar-sputtered samples with Al electrodes exhibited depletion regions. Values of the relative permittivity of 6.3 (AI electrodes) and 6.8 (Au electrodes) were determined from geometric capacitance variations in Ny-sputrered films. Current density-voltage characteristics normally showed ohmic and space charge limited conductivity with trap levels distributed exponentially within the insulator band gap, but exceptionally in N2-sputtered films with Au electrodes electroforming behaviour was observed, with Poole-Frenkel conductivity in the preformed region. Hopping was dominant at low temperatures. AC conductivity was higher for Ar-sputtering, and with Au electrodes. These effects were related to the possible structure of the films, and the diffusion of Au. AC conductivity increased with increasing frequency and temperature, appearing to be via a free band process at high temperatures and hopping at low temperatures. Plausible values of the density of localised states were deri ved using Elliott's model, but this could not be considered uni versally applicable. Loss tangent was also frequency and temperature dependent in Ny-sputtered films, showing a minimum value which shifted towards higher frequencies with increasing temperature. In Ar-sputtered samples minima were not observed in the frequency range covered. The model of Goswami and Goswami appears consistent with these results, particularly in the former case. Variations in the loss tangent values with the sputtering gas and electrode species were consistent with the observed conducti vity variations. Optical properties were also investigated. In Ar-sputtered films, the optical band-gap appeared narrower and the optical absorption higher than for Ny-sputtered films, and a direct transition was also identified. Values of the electrical properties determined for such sputtered films are comparable to those prepared using more sophisticated methods, particularly in the case of Nj-sputtered films. Sputtering may therefore prove useful in semiconductor processing, where a relatively inexpensive method of deposition is required.
12
Chang, Ying-Che, e 張英哲. "Study on RF Sputtering system". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/4a4792.
Testo completoAbstract (sommario):
碩士國立中山大學
電機工程學系研究所
96
In this study, the RF sputtering system has been investigated comprehensively. Firstly, the relationship among the thickness of dark space, DC bias and electrode area under RF discharge is discussed. The impedance matching network of RF sputtering system, the configuration of glow discharge and their related electrical parameters are introduced and illustrated. The network theorem is used to calculate the loading impedance of RF sputtering system and to design an impedance matching circuit. And then the equivalent circuit of sheath and plasma in parallel plate RF discharge is analyzed. The characteristics of gas discharge of RF sputtering system are discussed, which includes the capacitance, resistance and conductivity on different pressure and magnetic field. Due to RF sputtering system usually driven at 13.56 MHz (this is an open frequency), we also considered how to avoid the radio frequency interference. In addition, the electrical characteristics of parallel plate RF discharge are revealed under argon atmosphere, and some of the general relationships between the various measured and determined parameters are also described. Finally, the difference between real system and ideal system are reported, and how to design a system which is rugged and reliable and can be operated, literally, in ”push-button”fashion, has been described in detail.
13
Ang, Wie Ming. "ACTFEL phosphor deposition by RF sputtering". Thesis, 1992. http://hdl.handle.net/1957/35925.
Testo completo
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Huang, Shuei Ching, e 黃學經. "RF Magnetron Sputtering Calcium Fluoride on Si". Thesis, 1993. http://ndltd.ncl.edu.tw/handle/19259890456934243086.
Testo completo
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Wang, Horng Jwo, e 王宏灼. "Growth of ALN Films by Reactive RF Sputtering". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/69354251443050827144.
Testo completoAbstract (sommario):
碩士國立中山大學
電機工程研究所
83
C-axis oriented aluminum nitride (AlN) thin films on different substrates, such as Corning glass, Si(100), GaAs(100), LiNbO3, SiO2/Si(100), are prepared by reactive RF magnetron sputtering The dependence of highly c-axis preferred orientation and surface morphology of AlN thin films on various sputtering pressure, RF power, N2 concentration and substrate temperature for developing the acoustic-optical (AO) devices in the future. In this study, the crystallography, grain size and morphology of AlN thin films are characterized by X-ray diffraction (XRD) and scanning electron microscopy (TEM). Meanwhile,transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) are adopted to determine the films microstruture and depth-concentration profiles. The XRD patterns show that increasing N2 concentrations up to 75% , sputtering pressure of about 7.5~15 mTorr and substrate temperature of more than 350℃, colorless and transparent c-oriented AlN films can be obtained with increased RF power. Futhermore, the morphology characterizations observed by SEM and TEM show that the texture of deposited c-axis oriented AlN films are columnar structure and grain size is about 80~100 nm. The deposition rate can be estimated 1.3~1.5μm/hr. Then, SIMS mesaurements show that Ar+ will stack at the interface between film and substrate. Meanwhile, little carbon and oxgen contaminations will be found in the films layers.
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Tsou, Chu-Hua, e 鄒居樺. "Study on Impedance Matching for RF Sputtering Optimization". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/et9qmg.
Testo completoAbstract (sommario):
碩士國立中山大學
電機工程學系研究所
95
In this study, we propose to investigate the variation of impedance,energy transfer from the RF generator to the discharge is not perfect, and then to improve the sputtering efficiency. For the deposition of insulating film by sputtering technique, the external factors such as input RF power,gar pressure and gas flow rate, and the internal parts of sputtering system such as sputtering target, substrate, and the structure of internal wells of chamber, lead to deviate sputtering parameters such as the DC bias on substrate, ion density in the plasma, and the capacitance of the sheath of glow discharge. All of the factors introduce larger deviations of impedance matching into the sputtering system, that results in decrease the efficiency of film deposition and/or induce re-sputtering phenomena.Comparisons are made with various matching networks applied in real RF sputtering systems. The networks, L-type is choose as the impedance matching network of the RF sputtering system for investigation, is analytically studied in their interaction with the experimental device.From the characteristics of L-type studied, in case of numerical values are deduced and used for the optimizing control the impedance matching network. Finally, by using this technology of impedance matching network, the optimizing sputtering efficiency is achieved and that can enhance the stability of equipment and increase the sputtering rate.
17
董家慶. "Electroless Ni interlayer medified coating by rf sputtering". Thesis, 1992. http://ndltd.ncl.edu.tw/handle/57417444621947816727.
Testo completo
18
Huang, S. J., e 黃世仁. "RF-Magnetron Sputtering TiO2 and Y2O3 on Si". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/49465714579935661314.
Testo completoAbstract (sommario):
碩士國立成功大學
材料科學(工程)研究所
82
Composite dielectric thin films of various combinations of TiO2 and Y2O3 were deposited by RF-magnetron sputtering in a low pressure ambient of O2 and Ar. In this work, a magnetron sputtering system is constructed with a 13.56 MHz and 500W RF power. The properties of film including growth rate, refractive index, morphology, composition, crystallinity, microstructure, the optical and electrical properties are investigated as func- tions of RF power, substrate temperature, ambient pressure and composition of target. The experimental results show that the refractive indices of thin films are between 2.2-2.47. In the range of visible light, the transparency increases with the content of Y2O3 . The energy band of the films is about 3.73 ev. From the XRD analysis of the microstructure, the film is amorphous. After heat treament, the films become polycrystalline. However, the films doped with Y2O3 comprise very small grains without evi- dence of growth after annealing. From the MOS C-V and I-V measurements, the dielectric cons- tants are determined with values between 28 and 48,and decrease with the increase of the doping concentration of Y2O3 . The dielectric constants increase after annealing. The I-V measurements also show that the leakage electric current density of the as depsited films changes more after annealing than the films doped with Y2O3.
19
LI, PAO-SHENG, e 李寶生. "CuO Nanostructure Gas Sensor Developed By RF Sputtering". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/hbqm2u.
Testo completoAbstract (sommario):
碩士國立臺南大學
電機工程學系碩博士班
106
A large number of factories and vehicles are continuously increasing with the development of industries and cities in the world, and pollutants in the air are also increasing. Vehicle emissions, burning of waste, create construction, agricultural land cultivation and animal husbandry, etc. The main content of this study is the use of copper oxide as a sensing material, applied to MEMS gas sensors, and micro-heaters in MEMS gas sensors to measure various gases including oxidation and reduction gas. In this study, the experimental copper oxide gas sensor is a semiconductor gas sensor type , have various advantages, for example: miniaturized original size (volume reduction elements), low power consumption (energy consumption reduction), low operating temperatures , manufacturing cost is reduced, a high sensitivity. In this study the structure characteristics there of micro electromechanical system sensor element of the gas to be analyzed and measured by SEM, EDX, XRD, XPS. The research themes of this master's thesis include: (1) Copper Oxide Micro-Electro-Mechanical Gas Sensor Process (2.) Analysis of Copper Oxide Thin Films and Characteristics of Copper Oxide Gas Sensors. Keywords: copper oxide; MEMS; gas sensors
20
Zhu, Cong Ming, e 朱聰明. "Preparation of PZT thin films by magnetron RF sputtering". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/84634416191423156040.
Testo completo
21
Cho, Sheng, e 卓昇. "Manufacturing AZOY-based thin film transistors with RF-sputtering". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/97822454730458263670.
Testo completoAbstract (sommario):
碩士國立清華大學
電子工程研究所
97
The thin-film transistor (TFT) is the first field-effect transistor, and it was expected to substitute for the vacuum tube applied in the computer. But the TFT was replaced gradually by the Metal-oxide-semiconductor field-effect transistor which has superior performance. The TFT was not paid much attention until the appearance of new application, which was the switch of pixels in LCDs, it was important especially LCDs with large size. The metal-oxide-based TFT has advantages of low cost, low temperature in process, few steps in process, high transparency, and high flexibility. All the aluminum zinc oxide (AZO) reported in the oxide based TFTs literature to date are used as electrode layers. There are no reports available in the literature on AZO based TFTs. In this thesis, the low cost device of thin film transistors have been fabricated by RF sputtering. We investigate the effect of processing parameters, including channel thickness, processing O2/Ar ratio, channel length,and processing substrate temperature, on the performance of TFTs.
22
Sung, Wen-Cheng, e 宋文正. "Fabrication of LiNbO3 thin film by RF magnetron sputtering". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/18485524547870684693.
Testo completoAbstract (sommario):
碩士大同大學
光電工程研究所
97
LiNbO3 thin films were deposited on different substrate by RF magnetron Sputtering deposition technique. The substrate temperature, deposition pressure, RF power, and Ar/O2 gas ratio were varied during the deposition of LiNbO3 thin film. The distance between target and substrate was 43 mm. The microstructuce and surface morphology were examined by using α–step, scanning electron microscopy, and X-ray diffractionmetry. The LiNbO3 thin film on Si substrate with Al2O3 buffer layer substrate grown at substrate temperature of 600℃, deposition pressure of 15 mTorr, RF power of 150 W, and Ar/O2 ratio of 8:2, would have preferred orientation of (104). Post annealing in O2 atmosphere would increased the LiNbO3 preferred orientation. But the LiNbO3 on Al2O3 buffer layer transform to Li deficiencies phase. The frequency response for the SAW filter were measured on thesetwo structures using a network analyzer. We succeed in making the IDT electrode of 3 μm on it, however, the characteristic of the SAW filter were not observed. The reason why we didn’t observe the SAW propreties of the thin film is owing to the wore crystalline property of the LiNbO3 film.
23
Li, Wei-Pin, e 黎偉彬. "Photocatalytic TiO2 films deposited by RF reactive magnetron sputtering". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/63028510607121866359.
Testo completoAbstract (sommario):
碩士龍華科技大學
工程技術研究所
97
Photocatalytic TiO2 films were deposited by rf reactive magnetron sputtering on non-alkali glass at 300 ℃ under total gas pressure of 10 mtorr with various N2/O2 flow ratios. The films were characterized by X-ray diffraction (XRD),atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV-Vis spectroscopy. X-ray diffraction spectra evidenced that all the films show anatase (1 0 1) preferred orientation. The deposited TiO2 films were of the anatase phase with a (1 0 1) preferred orientation. We performed both photoinduced decomposition of methylene blue (MB) and photoinduced hydrophilicity under UV light illumination.
24
Chen, Yu-hsiang, e 陳煜祥. "Research of Si:H Thin-Film by RF Magnetron Sputtering". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/20915329113832725729.
Testo completoAbstract (sommario):
碩士雲林科技大學
光學電子工程研究所
98
The main research is fabrication of intrinsic a-Si and n-type Si on the p-type poly Si wafer for thin-film solar cell by RF magnetron sputtering. Using post deposit annealing（PDA） improves the thin film of the intinsic a-Si to form polycrystal thin film which can capture more photons. The a-Si thin film treated with PDA at 600℃ shows the largest grain size observed by FE-SEM and the minimum leakage current measured by I-V measurements. The intrinsic a-Si was deposited by sputtering at the room temperature during the sputtering H2 gas was introduced. We research the Si-H bonding structure and measure the properties of surface morphology, electrical and optical characteristics.
25
Shen, Guan-Hung, e 沈冠宏. "AZOY transparent conducting thin films prepared by RF magnetron sputtering". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/34m7a8.
Testo completoAbstract (sommario):
碩士國立高雄大學
化學工程及材料工程學系碩士班
97
As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and conductivity, can be widely applied for the industry of semiconductor and photoelectricity such as LCD, solar cells, and transparent touch panel etc. This research utilizes RF magnetron sputtering system to deposit AZOY thin films on the glass substrate. During the sputtering process, the distance between target and substrate will individually alter oxygen concentration, chamber pressure, substrate temperature, sputtering power, deposition time, and deposition parameters to proceed the deposition of thin films. Then we use Alpha-step to measure the thickness of thin films in order to estimate the deposition rate of thin films’ surface. We also use XRD, SEM, and AFM to observe the morphology and the crystalline structure of thin films. In addition, transmittance can be measured by spectrophotometer and conductivity can be measured through using four-point probe. Finally, we try to interpret all phenomena that we measured and observed above in a reasonable way and find out the optimum experiment parameter. According to the research result, adjusting the deposition parameters of thin films will affect the characteristics of AZOY transparent conducting thin films. The optimum processing parameters are 0% oxygen concentration, 3mTorr chamber pressure, 400℃ substrate temperature, 150W sputtering power, 120 mins deposition rate. In addition, the lowest resistivity is 8.437×10-4Ω-cm and the average transmittance of thin files in the region of visible is around 80%.
26
Yang, Li-Wei, e 楊立暐. "Preparation of transparent antibacterial Cu2Y2O5 thin film by RF sputtering". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/psnnuj.
Testo completoAbstract (sommario):
碩士國立臺北科技大學
材料及資源工程系研究所
101
Delafossite type of CuYO2, CuCrO2, and CuAlO2 are the potential candidates for p type transparent conducting oxide films (TCOs). Due to the wide range of applications for TCOs in electronic devices has generated interest in understanding the growth and characterization of these materials. Continue our previous research of antibacterial thin films, in order to improve the transparency and fit the RoHs guide in this work employed a radio-frequency (RF) magnetron sputtering method to prepare Cu2Y2O5 thin film on quartz substrate and followed by post-deposition annealing at 800˚C in air. The structure of the Cu2Y2O5 thin films was confirmed by X-ray diffraction. The transmittance properties were measured by a UV-Vis spectrometer. The film thickness was measured by an ellipsometer. The antibacterial property was followed the ISO 22196 method to evaluate the colony forming unit (CFU) of E. coli on the Cu2Y2O5 surface after several hours. The experimental results find the Cu2Y2O5 surface to exhibit superior antibacterial performance and an optical transparency of >80% in the visible region with a thickness of 23 nm. A novel transparent antibacterial coating has been demonstrated in the present study.
27
Lin, Chu-Jian, e 林楚健. "Investigation of Gallium Arsenide Thin Films deposited by RF Sputtering". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/48n87a.
Testo completoAbstract (sommario):
碩士國立中央大學
光電科學與工程學系
104
In this study the Gallium Arsenide thin films deposited on the Germanium wafer by using sputtering method was discussed. The advantage of sputtering method was its lower costs and nontoxic process. Firstly, the properties of the Gallium Arsenide films were analyzed with varied RF power and the substrate temperature processed .Then , the annealing were developed to optimize the Gallium Arsenide film quality . XRD , Raman , AFM and TEM to analyze the results of grown the Gallium Arsenide thin films to achieve a good crystallize GaAs film .
28
Lin, Chih-an, e 林志安. "The study of Mn doped BiFeO3 by RF magnetic sputtering". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/03591514725897348116.
Testo completoAbstract (sommario):
碩士國立成功大學
材料科學及工程學系碩博士班
96
BiFeO3(BFO) is one of the most potential multiferroic materials for new device applications. This is because BFO has high ferroelectric Curie temperature (850oC) and antiferromagnetic Neil temperature (370oC), which are both above room temperature. This research mainly investigated the effects of manganese doping, i.e. BiFe1-XMnXO3 x = 0, 0.1, 0.2, 0.3, 0.4, on the BFO properties. Because BiMnO3 (BMO) is a ferroelectric ferromagnet and also, Mn3 + ion has a similar radius to Fe3 + ion, it was expected to be able to replace some Fe3 + with Mn3 +, resulting in new magnetic properties in the mixed compound BiFe1-XMnXO3 (BFMO). This experiment utilized RF magnetic sputtering to deposit films on the Si, SrTiO3 and LaAlO3 substrates at room temperature, which were subsequently sintered at high temperatures to form the desired phase. X-rays diffraction (XRD) was used to analyze the phase purity and structures of the prepared films, X-ray photoelectron spectroscopy (XPS) was used to study the ion bonding valence, field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) was used to observe the surface morphology of the films, and finally superconducting quantum interference device (SQUID) was used to measure the magnetization-magnetic field (M-H) hysteresis loops in order to understand the magnetic properties of the films. We found that more impurity phases appeared with more addition of Mn, indicating that there was a limit for Mn doping in BFO. By the XPS analysis, it was shown that with the increased amount of Mn doping, the grain size of films became smaller . AFM showed that the more Mn addition, the rougher of the surface. It was also found by SQUID measurement that with the addition of Mn (x=0.1) , there was an increase of the saturated magnetization of the doped films.
29
Tiao, Sam, e 刁勇升. "The preparation of SrBi2Ta2O9 thin film by RF. Magnetron sputtering". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/49998636880097292944.
Testo completoAbstract (sommario):
碩士南台科技大學
電子工程系
93
The dielectric characteristics of layer structured bismuth material SrBi2Ta1.8V0.2O9 have been well developed. SrBi2Ta1.8V0.2O9 ceramic was used as the target material and SrBi2Ta1.8V0.2O9 thin film was deposited on ITO glass substrate by R.F. magnetron sputtering method at room temperature for 10~40 min. A 200-600nm thin film was obtained by rapid thermal annealing (RTA) process at 600oC with different time in oxygen using the raising temperature rate of 900oC/min. The crystallization and dielectric characteristics of SrBi2Ta1.8V0.2O9 thin film were developed with the aid of X-ray diffraction patterns, SEM, and impendence analyzer. The crystal intensities of SrBi2Ta1.8V0.2O9 thin film depends on the deposited time and annealing temperatures. The deposited SrBi2Ta1.8V0.2O9 thin film has the dielectric characteristics of dielectric constant 122~245 and dielectric loss 4.5~12.3 x 10-3. In this study, the optimum deposited and annealing condition are: Deposited time ＝ 40min, Annealing temperature ＝ 600oC, Annealing time ＝ 10 min.
30
yu-ming, Huang, e 黃裕銘. "Study of ZnO Films Process Parameter by RF Magnetron Sputtering". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/19324478790699872340.
Testo completoAbstract (sommario):
碩士南台科技大學
電子工程系
93
The R.F magnetron sputtering technique is employed in this study , ZnO thin films deposited on corning 1737F glass、 Si wafer (p-type (100)) by using ZnO target. The reaction atmosphere was mixture argon and oxygen. In the suitable controll by O2 concerntration, work pressure, R.F power and substrate, the ZnO thin film with C-axis preffered orientation was obtained. The microstructure and properties of the resulting ZnO thin films were examined by using X-ray diffractometry、SEM、α- step、TEM and AFM. The experimental result indicated that the ZnO thin films in the same sputtering condition, can obtain higher deposited rate on glass substrate. But ZnO thin films deposited on Si substrate got well C- axis crystallization on Si substrate. The best parameter of this research was 50m Torr pressure, 6% O2 concentration, R.F power 200W. SEM plane view and cross-section images shows that the morphology of ZnO thin film grows from island structure to columnar structure. The result shows that heating substrate can help thin films well crystallization and smoother better than just increasing deposited time.
31
Chi, Chu-Te, e 戚居德. "Fabrication of flexible transparent p-n heterojunction by RF sputtering". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/26723107584760951924.
Testo completoAbstract (sommario):
碩士臺灣大學
光電工程學研究所
98
This thesis reports the deposition of n⁺AZO, n-ZnO, i-ZnO, n-MgxZn1-xO and p-CuAlO2 transparent conducting thin films by RF sputtering and the fabrication of transparent p-n hetero-junction thin film diode without additional heat treatment. Both commercial ITO coated glass and PET are used as substrates. Four device structures are studied here: (1) n⁺AZO/p-CuAlO2/ITO, (2) n⁺AZO/n-ZnO/p-CuAlO2/ITO, (3) n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO, (4) n⁺AZO/i-ZnO/p-CuAlO2/ITO. The I-V characteristics and UV responsivity of the thin film diodes with p-layer, n-layer and i- layer of different thickness are compared. In the n⁺AZO/p-CuAlO2/ITO p-n⁺ hetero-junction series, the thickness of p-type is varied: =100, 200, 300nm and the thickness of n⁺-type is varied as: =100, 200, 300nm. The turn-on voltage is about 0.8V. The breakdown voltage increases with the increase of the p-layer thickness while is independent of the n⁺-layer thickness. The on -glass p-n⁺ hetero-junction ( =300nm, =200nm) shows a rectify ratio of at ±4V and UV responsivity of A/W at -6V. In the n⁺AZO/n-ZnO/p-CuAlO2/ITO p-n hetero-junction series, the thickness chosen for p-layer and n-layer are: =100, 200, 300nm and =40, 80, 120nm, respectively. The turn-on voltage is about 2.0V. The breakdown voltage increases with the increase of p-layer and n-layer thickness. The on-glass p-n hetero-junction ( =200nm, =80nm) shows a rectify ratio of at ±4V and UV responsivity of A/W at -6V. In the n⁺AZO/n-MgxZn1-xO/p-CuAlO2/ITO p-n hetero-junction series, the content of Mg in n-MgxZn1-xO is varied as: 0, 0.05, 0.1 and 0.3. The turn-on voltage and breakdown voltage increase as the content of Mg in n-MgxZn1-xO layer increases. Under the UV irradiation of 365nm, its responsivity decreases as Mg content in n-MgxZn1-xO layer increases. In the n⁺AZO/i-ZnO/p-CuAlO2/ITO p-i-n⁺ hetero-junction series, the thickness of i-type is varied as: =10, 20, 40nm. The turn-on voltage and breakdown voltage increase as the i-layer thickness increases. The on-glass p-i-n⁺ hetero-junction ( =10nm) shows a rectify ratio of at ±4V. The turn-on voltage is about 1.8V, the breakdown voltage is about -9.9V and the UV responsivity at -6V is A/W.
32
Shih, Ming-Hong, e 施明宏. "Bi1-xSbx films prepared by RF sputtering and annealing process". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/07531697163457077789.
Testo completoAbstract (sommario):
碩士國立臺灣大學
物理研究所
99
In this thesis we use RF sputtering system, preparation of Bi film on the surface of the silica substrate, then prepare different thicknesses of Sb in Bi film, the formation of varying proportions of Bi / Sb bilayers, follow-up for Bi / Sb bilayers after annealing to form different proportions of Bi1-xSbx alloy, because Bi and Sb elements in the same group V and have the same crystal structure, after X-Ray analysis and crystal planes of JCPD database show that Bi / Sb bilayers after annealing have full mutual diffusion of alloy, high-resolution field emission electron micro-probe device (FE-EPMA) measurement shows that the proportion of Bi1-xSbx alloy, we can be one of the known Bi1-xSbx alloy and crystal planes to confirm the proportion of other alloy ratio of Bi1-xSbx. In addition, Bi1-xSbx alloy semimetal-semiconductor transition characteristics depend on the Sb values of Bi1-xSbx alloy, add a small amount of Sb content will have semiconductor properties, and good at low temperature for the n-type thermoelectric cooling materials. In the annealing process use RTA (Rapid Thermal Annealing), the results showed that when reaches 573K for Bi / Sb bilayers after annealing ,the (110) crystal plane is offset, when cooled to different temperatures to annealing, with the Sb content increases, the surface of the grain will be different, the measurement of surface resistance with temperature, appear the characteristics of semiconductor.
33
Chang, Chih-Yuan, e 張智淵. "Investigation of transparent conductive ZnO:Al thinfilms deposited by RF sputtering". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/382w29.
Testo completoAbstract (sommario):
碩士國立中山大學
光電工程學系研究所
97
In this thesis, we focus on the properties of Al-doped ZnO (AZO) thin films for opto-electronic applications. AZO films were prepared by radio-frequency sputtering on silicon and optical glass substrates with 98wt% ZnO and 2wt% Al2O3 alloy target. AZO films were prepared under various deposition parameters (RF power, background pressure, Ar flow, and substrate temperature). The optimal parameters for the conductive and transparent AZO films are power = 100W, pressure = 3mTorr, Ar flow = 5sccm, and substrate temperature 250℃. The film exhibits the resistivity(ρ) of 2.5×10-3 Ω-cm and 85% transparency in the 400-1800nm range. To find out optimum substrate temperature for the AZO film on p-GaAs (p=2×1018), the samples were deposited at various temperatures followed by annealing at 400℃ for 30sec. The current-voltage (I-V) characteristics were measured. AZO films make good ohmic contact to p-GaAs to act as an electrode layer. InGaAs quantum-dot solar cells of AZO contact layers have been fabricated. A high filling factor of 52% is achieved.
34
Lu, Yung-wei, e 盧勇瑋. "Fabrication of BaNd2Ti5O14 Thin Film Capacitors by RF Magnetron Sputtering". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/7af7r8.
Testo completoAbstract (sommario):
碩士國立中山大學
電機工程學系研究所
97
The motivation of this study is based on integrated passive filter dielectric thin films with thin layers. Reducing the area of integrated passive filter in a circuit by enhancing dielectric constant with same capacitance and thickness is the purpose which has been expected. To fabricate the thin film MIM structure capacitors, RF magnetron sputtering method was selected and BaNd2Ti5O14 composed materials treated as the target to grow the thin film dielectric layer in MIM structure capacitors. In this study the MIM structure capacitors were deposited on alumina substrates with Pt electrodes. In the thin film experiments, various operation parameters of sputtering deposition and post thermal process at different temperature were used to perform the desired thin film dielectric layers. In order to obtain the optimal performance of the dielectric thin films, “Taguchi Method” was used as a experimental tool. The primary investigation focused on the electric characteristics of the thin film capacitors in this article. In the arranged ranges of the parameters, the optimal dielectric thin films were deposited under RF power 100W with deposition temperatures at 400℃, chamber pressure is 10mtorr. The dielectric constant of deposited thin films is 39.2 at 1MHz, the dissipation factor is 1.38％ at 10kHz, leakage current is 2.61X10-7A/cm2 at 5V operating voltage and breakdown electric field of 0.29MV/cm is observed. The crystalline structures of deposited thin films were characterized by XRD and found amorphous structure. Film roughness was measured by Atomic Force Microscope (AFM) with 0.263 nm.
35
Chen, Hsiao-Lun, e 陳孝綸. "Multi gas barrier film deposited by RF magnetron sputtering system". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/w545zs.
Testo completoAbstract (sommario):
碩士國立中央大學
能源工程研究所
107
In recent years, electronic digital products become lighter, the demand for flexible electronic products become higher and higher. Due to the water vapor transmission rate(WVTR) of the packaging is less than 10-3 g/m2/day, gas barriers on plastic substrates coatings are also becoming increasingly important. In this study, plasma enhance chemical vapor deposition (PECVD) was used to control oxygen and hexamethyldisiloxane (HMDSO), and organic Si-O-Si films were being coated on the plastic substrate. Changing the gas flow can coat different structures of films. Therefore, a gas barrier film is stacked by the network structure of an inorganic film and the linear and cage structure of an organic film interlaced. Besides, a calcium test system was established to measure the water vapor transmission rate of the films. The physical and optical properties of the film layers were analyzed by a-step, atomic force microscope(AFM), ultraviolet/visible spectrophotometer(UV/VIS) and radius of curvature. At the same thickness, the WVTR of the 3-Pair (substrate/buffer layer (50 nm)/barrier layer (100 nm)) is 7 x 10-3 g/ m2/day, but WVTR of the 6-Pair (substrate/buffer layer (25 nm)/barrier layer (50 nm)) reduced to less than measurement limit of 3 x 10-3 g/m2/day. Besides, the film of 4-Pair (substrate/buffer layer (50 nm)/barrier layer (100 nm)) stacking is too thick to be curved of the curvature radius of 2.43 cm. This is the reason why a crack is produced. The film can support a curvature radius of 2.43 cm and WVTR is as close to its measurement limit due to the increased bending resistance of the film layer in the 8-Pair (substrate/buffer layer (25 nm)/water blocking layer (50 nm) stack. To sum up, 6-Pair (S/Buffer (25 nm)/Barrier (50 nm)) radius of curvature increased from 2.65 cm to 2.98 cm, WVTR less than x 10-3. g/m2/day, residual stress 112 MPa, surface roughness 1.28 nm, average transmittance 91.42% and the thickness is only 450 nm.
36
"XPS study of RF-sputtered copper in silicon dioxide". 2003. http://library.cuhk.edu.hk/record=b5891761.
Testo completoAbstract (sommario):
by Leung Kit Sum = 透過X光電子譜研究射頻濺射之銅復合物石英 / 梁潔心.Thesis submitted in: August 2002.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2003.
Includes bibliographical references (leaves 77-78).
Text in English; abstracts in English and Chinese.
by Leung Kit Sum = Tou guo X guang dian zi pu yan jiu she pin jian she zhi tong fu he wu shi ying / Liang Jiexin.
Abstract --- p.i
論文摘要 --- p.iii
Acknowledgement --- p.iv
Table of Content --- p.v
List of Figures --- p.ix
List of Tables --- p.xi
Chapter CHAPTER 1 --- INTRODUCTION
Chapter 1.1 --- Nanoparticles and Nanophase Materials --- p.1
Chapter 1.2 --- Nonlinear Optical Phenomena and Their Physical Origin --- p.4
Chapter 1.2.1 --- Dielectric Confinement --- p.6
Chapter 1.2.2 --- Quantum Confinement --- p.8
Chapter 1.2.2.1 --- Intraband Transition --- p.9
Chapter 1.2.2.2 --- Interband Transition --- p.9
Chapter 1.2.2.3 --- Hot-electron Transition --- p.11
Chapter 1.3 --- Importance of Optical Nonlinearity --- p.11
Chapter 1.3.1 --- Self-Phase Modulation --- p.11
Chapter 1.3.2 --- Self-Focusing/Defocusing --- p.12
Chapter 1.4 --- Sample Preparation --- p.12
Chapter 1.4.1 --- Sputtering --- p.13
Chapter 1.5 --- Characterization of Nanocomposites --- p.15
Chapter 1.6 --- Aim of the Project --- p.15
References --- p.17
Chapter CHAPTER 2 --- INSTRUMENTATION
Chapter 2.1 --- Introduction --- p.20
Chapter 2.2 --- Sputter Deposition --- p.20
Chapter 2.2.1 --- Glow Discharge --- p.21
Chapter 2.2.2 --- Radio-Frequency Sputtering (RF Sputtering) --- p.24
Chapter 2.2.3 --- Magnetically Enhanced Sputtering --- p.24
Chapter 2.2.4 --- Instrumentation --- p.25
Chapter 2.2.4.1 --- Target Assemblies --- p.27
Chapter 2.2.4.2 --- Shutter --- p.28
Chapter 2.2.4.3 --- Substrate Holder --- p.28
Chapter 2.2.4.4 --- Power Supply --- p.28
Chapter 2.2.5 --- Experimental --- p.29
Chapter 2.3 --- X-ray Photoelectron Spectroscopy (XPS) --- p.29
Chapter 2.3.1 --- Instrumentation --- p.31
Chapter 2.3.2 --- Application to metal nanoclusters composite glass --- p.33
Chapter 2.3.2.1 --- Compositional Analysis --- p.33
Chapter 2.3.2.2 --- Depth Profiling --- p.33
Chapter 2.3.3.3 --- Auger Parameters --- p.33
Chapter 2.4 --- Transmission Electron Microscopy (TEM) --- p.34
Chapter 2.4.1 --- Sample Preparation --- p.35
Chapter 2.4.1.1 --- Sample Thickness Determination --- p.35
Chapter 2.4.1.2 --- Ion Milling --- p.36
Chapter 2.4.2 --- Instrumentation --- p.36
Chapter 2.4.3 --- Contrast and Image Formation --- p.38
Chapter 2.4.3.1 --- Bright and Dark Field Image --- p.38
Chapter 2.4.3.2 --- Mass and Thickness Contrast --- p.40
Chapter 2.4.3.3 --- Diffraction Contrast --- p.40
References --- p.42
Chapter CHAPTER 3 --- COMPOSITION AND NANUSTRUCTURE OF COPPER DOPED FUSED SILICA
Chapter 3.1 --- Introduction --- p.44
Chapter 3.2 --- Experiment --- p.45
Chapter 3.3 --- Results and Discussion --- p.47
Chapter 3.3.1 --- Effect of Input RF Power on the Growth of Film --- p.47
Chapter 3.3.2 --- Theoretical Calculation of Cluster Size by Ratio of Surface to Total Amount of Copper --- p.55
Chapter 3.3.3 --- TEM Studies of Copper Nanoclusters --- p.57
Chapter 3.3.4 --- Further Discussion: Effect of Current and Voltage on the Determination of Deposition Rate --- p.60
Chapter 3.3.5 --- Atomic Distribution and Chemical State of Copper Nanocluster --- p.60
Chapter 3.3.6 --- Effect of Pressure on the Growth of Film --- p.66
Chapter 3.3.6.1 --- How Pressure Affects Cluster Growth --- p.70
Chapter 3.3.7 --- Effect of Deposition time on the Growth of Film --- p.71
Chapter 3.3.7.1 --- How Film thickness Affects Cluster Growth --- p.75
Chapter 3.4 --- Summary --- p.75
References --- p.77
Chapter Chapter 4 --- CONCLUSION AND FUTURE DIRECTIONS
Chapter 4.1 --- Conclusion --- p.79
Chapter 4.2 --- Future Directions --- p.79
Chapter 4.2.1 --- Generation of Active Matrix Nanocomposite --- p.79
37
jared e 林榮達. "Study on the properties of small scaled magnetron RF sputtering apparatus". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/61956662601637012789.
Testo completo
38
Liu, Chu-Fang, e 劉筑芳. "Preparation and Characterization of Mn-doped BaTiO3 Films By RF Sputtering". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/66584669291830520740.
Testo completoAbstract (sommario):
碩士國立海洋大學
材料工程研究所
90
amorphous, as confirmed by XRD results, and started to crystallize at temperature of 600°C or above, depending the Mn content. The as-deposited films became generally refined as Mn content increased. Granular structures and clusters were seen in SEM micrographs of post-annealed films, and the clusters were larger and densed with increasing Mn contents. DSC results revealed that the activation energies for crystallization and cubic-to-hexagonal structure phase transformation are ~100 and ~500 kJ/mole, varying with the Mn content Effects of Mn have also been observed on film leakage current and dielectric constant.
39
Tseng, Cheau-Huey, e 曾巧慧. "Property Modification of Tantalum Pentoxide Films Prepared by RF Magnetron Sputtering". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/77526101405549055661.
Testo completoAbstract (sommario):
碩士國立交通大學
材料科學與工程研究所
86
Tantalum oxide (TaO1+x) films were prepared by radio frequency (RF) amgnetron sputtering method at different chamber opressure and Ar/O2 ratio. The film was then modified by a 800℃ heat treatment and microwave oxygen oplasma to transform to Ta2O5 The crystallinity, morphology and stoichiometric ratio of the films was investigated by x-ray diffraction, scanning electron microscope (SEM), atomic force microscope (AFM) and Auger electron spoectroscopy (AES), respectively. the electrical and optical properties of the films subjected to different treatment were also measured. the tantalum oxide films with best electrical performance was prepared at 6 mTorr sputtering pressure and 14.3% oxygen ambient followed by microwave oxygen plasma treatment. It had the breakdown current density ８×10-4 A/cm2 at the electric field 8.1 MV/cm. The capacitance of tantalum oxide films was 729 pF and dielectric constant was 30.7. Experimental results indicated taht microwave plasma treatment only modified the structure near film surface. The stochiometry fo the film remained TaO1+x regardless of the following modification process, as indicated by x-ray diffraction study.
40
Han, Jia-wei, e 韓嘉緯. "Fabrication of Hydrogenated microcrystalline Silicon Thin Films Using RF Magnetron Sputtering". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/59024892200276454847.
Testo completoAbstract (sommario):
碩士國立中央大學
光電科學研究所
95
Hydrogenated microcrystalline silicon (μc-Si:H ) thin films have attracted many attentions due to the high mobility compared with the amorphous silicon (a-Si) thin films. To fabricate μc-Si:H thin films plasma-enhance chemical vapor deposition (PECVD) is the most popular method. The disadvantages of PECVD are the high facility cost and using the toxic processing gases such as silane (SiH4). Whereas there is no these disadvantages using radio-frequency (RF) magnetron sputtering to deposit silicon thin films. Unfortunately, the silicon thin films deposited by the regular RF magnetron sputtering are a-Si. In this study, μc-Si:H thin films were fabricated using RF magnetron sputtering with argon and hydrogen as working gas at low substrate temperature (Ts=250℃). The grain sizes, crystal volume fractions and photosensitivities (ratios of dark conductivities and photo conductivities) of the μc-Si:H thin films which deposited with different hydrogen partial pressures and sputtering powers were analyzed. The results showed that the grain sizes and the crystal volume fractions were increased and the photosensitivities were decreased as the hydrogen gas flow increased. The grain sizes were between 15 to 20 nm and the crystal volume fractions were between 75 to 80% at high hydrogen gas flow .
41
Yen, Po-Fu, e 顏伯甫. "Preparation and Characteristic of AlN Thin Film by RF Magnetron Sputtering". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/89860094719100628610.
Testo completoAbstract (sommario):
碩士國立成功大學
材料科學(工程)研究所
83
The RF magnetron sputtering technique was employed in this study to obtain AlN thin films on silicon and glass substrat- es. The reaction atmosphere was a mixture of argon and nitr- ogen and the selected sputtering targets were either aluminum or AlN . By changing the RF power, the chamber pressure ,and the N2/Ar ratio , the aluminum nitride thin film that with C- axis preferred orientation was observed. This is believed to substantially benefit the futural application of this materi- al in packaging industry. The crystallography of the costed films was analyzed by x- ray diffraction (XRD) and by operating the scanning electron microscope (SEM) for film surface property and sample cross- section morphology , and by practicing the alfa-step analysis for film thickness. Besides , the composition and its depth of profile of AlN in the as- sputtered film were also investi- gated using electron probe microscope analysis (EPMA) and se- condary ion mass spectrum (SIMS) techniques.The I-V and C-V curves of the as-sputtered film are measured to clarify the electric properties. The experimental results indicated that the optimum sputte- ring conditions were chamber pressure at 3 mTorr, N2/Ar ratio at 0.15 (for AlN target) and 0.5 (for Al target), RF power at more than 400W and the substrate temperature at room temperat- ure. The AlN film was found to be with excellent surface fl- atness (Ra=20nm) , Al/N atomic ratio closed to 1 , and in the C-axis preferred orientation. The SEM observation showed the morphology of columnar grains existed in the AlN film. The deposition rate of the AlN film, when the RF power was set at 400W, was 28-32 nm/min using the Al target and 38-42 nm/min u- sing the AlN target. The electric resistivity and the specif- ic dielectric constant of the AlN thin film are 1E10-1E11 ohm- cm and 10 from I-V and C-V curves , respectively .
42
Lee, Tsung-Yu, e 李宗裕. "PMT thin films deposited on Si wafers by RF-magnetron sputtering". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/20520310780858321065.
Testo completo
43
Kuo, Yi-Nan, e 郭益男. "Photoluminescence Characteristics of ZnO Thin Films by Reactive RF Magnetron Sputtering". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/13778007541907436201.
Testo completoAbstract (sommario):
碩士國立中山大學
電機工程學系研究所
92
In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500°C and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films. The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters were obtained by the analyses of XRD and SEM. The optical properties of ZnO thin films were discussed also. Ultraviolet (UV) visible spectrometer and photoluminescence spectrometer were used to measure the visible transmission and photoluminescence characteristics (PL), respectively. According to the experimental results, it is found that under optimal sputtering parameters, the emitted UV light intensity will be increased as the FWHM in x-ray diffraction is decreased, i.e. the grain size is larger. In addition, after post-deposition annealing at 800℃, the strongest UV emission intensity was obtained in the nitrogen ambient and the strongest visible (green) emission intensity was obtained in the oxygen ambient.
44
Chien, Wei-Lun, e 簡維倫. "Deposition of AlN films by RF magnetron sputtering for SAW application". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/65230696237394796950.
Testo completoAbstract (sommario):
碩士大同大學
光電工程研究所
91
Aluminum Nitride (AlN) has excellent piezoelectric and optical properties, which made it a prime candidate for SAW and integrated optical applications. In this dissertation, the fabrication of AlN/SiO2/Si structure for SAW and optical waveguide applications is studied in detail. In SAW application, we deposited AlN thin film on p-type Silicon wafer with SiO2 Buffer layer by RF magnetron sputtering. In order to get the C-axis oriented aluminum nitride films by changing the rf power. sputtering pressure.N2 concentration and substrates temperature. Last we produced Interdigital transducers (IDTs) to discuss the SAW properties of AlN thin film. The preferred orientation of AlN(002) thin films were prepared on Si(100) with SiO2 buffer layer by RF magnetron sputtering at 200 , 450 W, 3 mTorr with sputtering gas Ar and N2. We successfully grew highly PZT AlN(002) thin films on SiO2/Si(100) substrates annealed for 30 minutes at 450 .
45
Wu, I.-Han, e 吳宜翰. "The Study of Titanium Oxide Thin Film Prepared by RF Sputtering". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/93gns7.
Testo completoAbstract (sommario):
碩士國立高雄第一科技大學
光電工程研究所
96
This thesis is to study the characteristics of the Titanium Oxide thin films deposited on Silicon Wafer substrate by Radio Frequency magnetron sputtering using Ti target in plasma of Argon and Oxygen mixtures. The experimental parameters are including chamber pressure, oxygen flow ratio, annealing temperature and thickness of titanium layer. The effects of the processing parameters on the crystal structure, surface morphology, chemical composition and other characteristics of titanium oxide thin films were investigated by different oxygen flow ratios, thickness titanium layer on substrate and thermal treatments. The titanium oxide thin films deposited by RF sputtering, will usually formed during the process under the oxygen insufficient condition behave N-type electrical conduction due to the Oxygen vacancy. In this thesis was pre-deposited a Ti layer on substrate before the deposition of the titanium oxide thin films and expect the oxygen vacancy to be occupied by the Ti atoms. The author studied this phenomenon and discussed the effect of Ti layer thickness and vacuum annealing temperature on N and P type semiconducting properties of the titanium oxide thin films. The titanium thin films of different processing recipes were characterized by Hall Effect, XRD and FE-SEM+EDS. The results indicated that the TiO2 films of N and P type are in anatase phase when annealing at 300 ~ 400 degrees. But when the annealing temperature reach 500 degree celsius both of the anatase and rutile phase coexists.
46
Chan, Po-Chun, e 詹博鈞. "Synthesis of graphene on silicon substrate by RF magnetron sputtering process". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/7mtu6a.
Testo completoAbstract (sommario):
碩士國立臺北科技大學
材料科學與工程研究所
102
Over the past decade, the characteristics of graphene with good electron mobility, excellent thermal conductivity, high electrical conductivity, a great surface area, and the optical penetration characteristics have been extensive researched. Currently, scientists have been able to synthesize single layer graphene by varieties techniques. However, it is still a big challenge to control the number of layers of graphene films. For the application of the semiconductor devices, it has to move graphene films to the substrate by transferring process and thus it increased the possibility of defects and lowered the quality of graphene films. The purpose of this study is to develop a new process that can synthesize graphene on the top of the substrate. In this study, Cu film was deposited on silicon substrate by the RF magnetron sputtering method, and the C film was deposited on the Cu/SiO2. The C/Cu/SiO2 was heat treatment in vacuum furnace at 900℃ for 5minutes . The as-grown sample was etched using solution of ferric chloride, and washed with deionized water, Graphene left on the silicon substrate. In this study, the thickness of Cu film was controlled among 100nm and 500nm. Carbon film was constantly at 3nm. In this study included three parts: (a) the continuity of C/Cu films between different substrate temperature. (b) the continuity of C/Cu film with different thickness of Cu film, (c) the effect of different substrate temperature as Cu film or C film was deposited. Firstly, we compared to the continuity of C/Cu films as Cu film was deposited between heating substrate and post annealing. The results showed that the continuity of C/Cu film with heating substrate better than post annealing after heat treatment in vacuum furnace. The thicker the copper film, the continuous was well. There was no graphene film grown as the substrate temperature of sputtering carbon was high than 400℃ and below 200℃. The main mechanisms of this study was carbon atomic could diffuse through Cu grain boundaries at high temperature. We using the wet etching method, graphene was obtained after the etching the Cu film, and was characterized by Raman spectroscopy and optical microscopy and electron microscopy. We found that in addition to the characteristic peaks appear carbon G band (1580cm-1), but in 2D band (2680cm-1) at the apparent scattering peaks, which means have a perfect six ring structure, while in the D band (1350cm-1) also appeared scattering peak, the literature shows that this structure has layers of graphene Raman peaks, the D band is still very high presence of known defects exist, we want to take advantage of this process after the semiconductor elements can be used
47
曹侯焱. "RF magnetron sputtering preparation of MgO films for gate dielectric application". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/82646401529936473457.
Testo completoAbstract (sommario):
碩士國立彰化師範大學
光電科技研究所
98
The MgO permittivity and leakage currents through Au(In)/MgO/n-type Si/In and Au(In)/MgO/p-type Si/Au structures were studied in the study. From the observed x-ray photoelectron spectroscopy,scanning electron microscopy, secondary ion mass spectrometry and ellipsometry results, it is suggested that MgSixOy formed at the MgO/Si interfaces may lead to enhancing the trapping/detrapping of charges, degrading the film capacitance characteristic. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky emission (Poole-Frenkel emission) for the gate injection (substrate injection). This is because of strong leakage current dependent on the interfacial property of devices. The discrepancy in the MgO permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of intermediate MgSixOy layer.
48
Chou, Lin-I., e 周凌毅. "Investigation on transition silicon thin film using RF reactive sputtering process". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/02811678752389400202.
Testo completoAbstract (sommario):
碩士國立中央大學
光電科學研究所
97
For mankind''s demand for the energy is greater and greater, it is necessary to develop renewable energies under limited resources. Solar energy plays an important role in the renewable energies, because it is inexhaustible. One of the most important components is hydrogenated silicon thin film solar cells. A lot of kinds of ideas for the solar cells have been proposed in recently. The commercial method to fabricate thin film solar cells is PECVD. However, the method has disadvantages such as high facility cost. In this research, a cheaper and without toxic method to produce the intrinsic layer of silicon thin film solar cell has been demonstrated. To analyze the characteristics of the different crystalline structures, high-efficiency hygrogenated microcrystalline silicon thin film solar cell can be achieved when the silicon film is transition type which photosensitivity can be larger than two order. Besides, positive bias voltage has been applied on the substrate to improve the crystallization under the same thickness. After combining the process of transition type silicon with the positive bias voltage, the crystallation fraction of the film can be increased and the photosensitivity can also higher than two order. If we applied negative bias voltage on the substrate, the films become denser and less voids to reach two order in photosensitivity for the transition type of silicon. The results show the way to fabricate silicon thin film solar cells using spattering method.
49
LIN, YING-ZHEN, e 林盈禎. "Crystallinity of ZnS:Tb, F thin film prepared by RF magnetron sputtering". Thesis, 1992. http://ndltd.ncl.edu.tw/handle/79494140152795875568.
Testo completo
50
Wu, Bing-Kun, e 吳炳琨. "Bismuth Nanowire and Nanoparticle Grown Naturally Using an RF Sputtering System". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/36447664127619478422.
Testo completoAbstract (sommario):
博士國立臺灣大學
物理研究所
101
Abstract We report the growth of Bismuth (Bi) nanowires and nanoparticles on glass substrates using a radio frequency (RF) sputtering system. The growth temperature and RF power were varied to study the growth mechanism of the nanowires or nanoparticles. The scanning electron microscope (SEM) / transmission electron microscope (TEM) images of the samples under various growth conditions were taken to reveal the morphologies of the Bi nanowires and films. We found that the optimal conditions for growing Bi nanowires were 120 ~ 160 ˚C, 0.5 W/cm2 (growth rate 40 Å/s at RT), and 240 s. The optimal conditions for growing Bi nanoparticles were above 200 ˚C, 0.12 W/cm2 (growth rate 6 Å/s at RT). A Tauc plot was used to determine the optical gap of different size nanoparticles.