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Articoli di riviste sul tema "Quantum dot"

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Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 7 luglio 2024

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1

Lavine, M. S. "From quantum dot to quantum dot". Science 353, n. 6302 (25 agosto 2016): i—884. http://dx.doi.org/10.1126/science.353.6302.882-i.

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2

Porod, Wolfgang. "Quantum-dot devices and Quantum-dot Cellular Automata". Journal of the Franklin Institute 334, n. 5-6 (settembre 1997): 1147–75. http://dx.doi.org/10.1016/s0016-0032(97)00041-0.

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3

Porod, Wolfgang. "Quantum-Dot Devices and Quantum-Dot Cellular Automata". International Journal of Bifurcation and Chaos 07, n. 10 (ottobre 1997): 2199–218. http://dx.doi.org/10.1142/s0218127497001606.

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We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of such Quantum-Dot Nonlinear Networks (Q-CNN). In addition, we discuss possible realizations of these structures in a variety of semiconductor systems (including GaAs/AlGaAs, Si/SiGe, and Si/SiO 2), rings of metallic tunnel junctions, and candidates for molecular implementations.
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4

Achermann, Marc, Sohee Jeong, Laurent Balet, Gabriel A. Montano e Jennifer A. Hollingsworth. "Efficient Quantum Dot−Quantum Dot and Quantum Dot−Dye Energy Transfer in Biotemplated Assemblies". ACS Nano 5, n. 3 (11 febbraio 2011): 1761–68. http://dx.doi.org/10.1021/nn102365v.

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5

Bryant, G. W., e W. Jask�lski. "Designing Nanocrystal Nanosystems: Quantum-Dot Quantum-Wells to Quantum-Dot Solids". physica status solidi (b) 224, n. 3 (aprile 2001): 751–55. http://dx.doi.org/10.1002/(sici)1521-3951(200104)224:3<751::aid-pssb751>3.0.co;2-l.

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6

Müller-Kirsch, L., N. N. Ledentsov, R. Sellin, U. W. Pohl, D. Bimberg, I. Häusler, H. Kirmse e W. Neumann. "GaSb quantum dot growth using InAs quantum dot stressors". Journal of Crystal Growth 248 (febbraio 2003): 333–38. http://dx.doi.org/10.1016/s0022-0248(02)01895-x.

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7

Salama, Husien, Billel Smaani, Faouzi Nasri e Alain Tshipamba. "Nanotechnology and Quantum Dot Lasers". Journal of Computer Science and Technology Studies 5, n. 1 (16 marzo 2023): 45–51. http://dx.doi.org/10.32996/jcsts.2023.5.1.6.

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In this paper, we reviewed the recent literature on quantum dot lasers. First, we started with the physics of quantum dots. These nanostructures provide limitless opportunities to create new technologies. To understand the applications of quantum dots, we talked about the quantum confinement effect versus dimensionality and different fabrication techniques of quantum dots. Secondly, we examined the physical properties of quantum dot lasers along with the history and development of quantum dot laser technology and different kinds of quantum dot lasers compared with other types of lasers. Thirdly, we made a market search on the practical usage of quantum dot lasers. Lastly, we predicted a future for quantum dot lasers.
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8

Wang, Yuhao. "CsPbX3 Perovskite Quantum Dot Laser". Highlights in Science, Engineering and Technology 27 (27 dicembre 2022): 334–42. http://dx.doi.org/10.54097/hset.v27i.3775.

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Quantum dot laser, which is well known as the 3rd generation of semiconductor laser, has attracted extensive attention of researchers in recent years. Compared with typical semiconductor laser, quantum dot exhibits the characteristics of low threshold, large laser gain, tunable bandgap, which make it promising for laser applications. Among the various quantum dot lasers, perovskite quantum dot laser is one superior type. Perovskite is a group of material with the structure of ABX3. This group of material is commonly used in solar cell and light emitting device such as perovskite quantum dot blue emitting diode, due to its excellent optical properties of narrow linewidth and high luminance. The perovskite quantum is also found to be a good material of laser gain material. Among all classes of perovskite, CsPbX3 has become an expected material for perovskite quantum dot laser. This work will conclude the theory of quantum dot laser and properties of CsPbX3 quantum dot laser based on current papers and reports.
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9

Fengjiao Wang, Fengjiao Wang, Ning Zhuo Ning Zhuo, Shuman Liu Shuman Liu, Fei Ren Fei Ren, Shenqiang Zhai Shenqiang Zhai, Junqi Liu Junqi Liu, Jinchuan Zhang Jinchuan Zhang, Fengqi Liu Fengqi Liu e Zhanguo Wang Zhanguo Wang. "Quantum dot quantum cascade photodetector using a laser structure". Chinese Optics Letters 15, n. 10 (2017): 102301. http://dx.doi.org/10.3788/col201715.102301.

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10

Weiss, Peter. "Quantum-Dot Leap". Science News 169, n. 22 (3 giugno 2006): 344. http://dx.doi.org/10.2307/4019198.

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11

Eberl, Karl. "Quantum-dot lasers". Physics World 10, n. 9 (settembre 1997): 47–52. http://dx.doi.org/10.1088/2058-7058/10/9/24.

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12

Reitzenstein, S., e A. Forchel. "Quantum dot micropillars". Journal of Physics D: Applied Physics 43, n. 3 (8 gennaio 2010): 033001. http://dx.doi.org/10.1088/0022-3727/43/3/033001.

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13

Tsuzuki, Toshimitsu. "Quantum Dot Displays". Journal of the Institute of Image Information and Television Engineers 68, n. 9 (2014): 745–47. http://dx.doi.org/10.3169/itej.68.745.

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14

Milburn, Gerard. "Quantum-dot computing". Physics World 16, n. 10 (ottobre 2003): 24. http://dx.doi.org/10.1088/2058-7058/16/10/33.

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15

Lozovik, Yu E., e N. E. Kaputkina. "Quantum Dot “Molecule”". Physica Scripta 57, n. 4 (1 aprile 1998): 542–44. http://dx.doi.org/10.1088/0031-8949/57/4/013.

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16

Horiuchi, Noriaki. "Quantum dot microlenses". Nature Photonics 10, n. 3 (26 febbraio 2016): 145. http://dx.doi.org/10.1038/nphoton.2016.33.

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17

Oraevsky, Anatolii N., M. O. Scully e Vladimir L. Velichansky. "Quantum dot laser". Quantum Electronics 28, n. 3 (31 marzo 1998): 203–8. http://dx.doi.org/10.1070/qe1998v028n03abeh001188.

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18

Branan, Nicole. "Quantum-dot aerogels". Analytical Chemistry 78, n. 17 (settembre 2006): 5975. http://dx.doi.org/10.1021/ac069453y.

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19

Henini, Mohamed. "Quantum dot nanostructures". Materials Today 5, n. 6 (giugno 2002): 48–53. http://dx.doi.org/10.1016/s1369-7021(02)00639-9.

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20

Austing, D. G., T. Honda, K. Muraki, Y. Tokura e S. Tarucha. "Quantum dot molecules". Physica B: Condensed Matter 249-251 (giugno 1998): 206–9. http://dx.doi.org/10.1016/s0921-4526(98)00099-4.

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21

Coe-Sullivan, Seth. "Quantum dot developments". Nature Photonics 3, n. 6 (giugno 2009): 315–16. http://dx.doi.org/10.1038/nphoton.2009.83.

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22

Won, Rachel. "Quantum-dot control". Nature Photonics 6, n. 4 (30 marzo 2012): 212. http://dx.doi.org/10.1038/nphoton.2012.57.

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23

Poznyak, Sergey K., Dmitri V. Talapin, Elena V. Shevchenko e Horst Weller. "Quantum Dot Chemiluminescence". Nano Letters 4, n. 4 (aprile 2004): 693–98. http://dx.doi.org/10.1021/nl049713w.

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24

Ledentsov, N. N. "Quantum dot laser". Semiconductor Science and Technology 26, n. 1 (15 novembre 2010): 014001. http://dx.doi.org/10.1088/0268-1242/26/1/014001.

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25

Rennon, S., K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. P. Reithmaier e A. Forchel. "Quantum-dot microlasers". Electronics Letters 36, n. 18 (2000): 1548. http://dx.doi.org/10.1049/el:20001084.

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26

Taylor, Robert A. "Quantum Dot 2010". Journal of Physics: Conference Series 245 (1 settembre 2010): 011001. http://dx.doi.org/10.1088/1742-6596/245/1/011001.

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27

Hoffmann, E. A., N. Nakpathomkun, A. I. Persson, H. Linke, H. A. Nilsson e L. Samuelson. "Quantum-dot thermometry". Applied Physics Letters 91, n. 25 (17 dicembre 2007): 252114. http://dx.doi.org/10.1063/1.2826268.

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28

Ustinov, Victor M., Nikolai A. Maleev, Alexey R. Kovsh e Alexey E. Zhukov. "Quantum dot VCSELs". physica status solidi (a) 202, n. 3 (febbraio 2005): 396–402. http://dx.doi.org/10.1002/pssa.200460325.

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29

Kiravittaya, S., H. Heidemeyer e O. G. Schmidt. "Lateral quantum-dot replication in three-dimensional quantum-dot crystals". Applied Physics Letters 86, n. 26 (27 giugno 2005): 263113. http://dx.doi.org/10.1063/1.1954874.

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30

Jin, Yeong Jun, Kyung Jun Jung e Jaehan Jung. "Recent Developments in Quantum Dot Patterning Technology for Quantum Dot Display". journal of Korean Powder Metallurgy Institute 31, n. 2 (30 aprile 2024): 169–79. http://dx.doi.org/10.4150/jpm.2024.00073.

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Abstract (sommario):
Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.
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31

CHEN, GOONG, ZIJIAN DIAO, JONG U. KIM, ARUP NEOGI, KERIM URTEKIN e ZHIGANG ZHANG. "QUANTUM DOT COMPUTING GATES". International Journal of Quantum Information 04, n. 02 (aprile 2006): 233–96. http://dx.doi.org/10.1142/s0219749906001761.

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Semiconductor quantum dots are a promising candidate for future quantum computer devices. Presently, there are three major proposals for designing quantum computing gates based on quantum dot technology: (i) electrons trapped in microcavity; (ii) spintronics; (iii) biexcitons. We survey these designs and show mathematically how, in principle, they will generate 1-bit rotation gates as well as 2-bit entanglement and, thus, provide a class of universal quantum gates. Some physical attributes and issues related to their limitations, decoherence and measurement are also discussed.
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32

Pelyashchak, R. M., e N. Ya Kulyk. "Influence of heterogeneously deformed quantum heterogeneity point is a matrix for quantum-dimensional states of charges". Фізика і хімія твердого тіла 16, n. 4 (15 dicembre 2015): 641–48. http://dx.doi.org/10.15330/pcss.16.4.641-648.

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Taking into account the equilibrium of mechanical equilibrium, the theory of perturbation of the form of the tensile heterogeneity "quantum dot-matrix" was developed. Within the framework of the deformation potential model, taking into account the perturbation of the surface of the quantum dot, the influence of the inhomogeneously deformed heterogeneity of the "quantum dot matrix" on the quantum states of charges localized inside the quantum dot is theoretically analyzed.
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33

Wang, Zhi Guo. "Preparation and Measurement of Quantum State between Two-Dimensional Dots in Quantum Network". Applied Mechanics and Materials 543-547 (marzo 2014): 2742–45. http://dx.doi.org/10.4028/www.scientific.net/amm.543-547.2742.

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Currently, researches on the preparation and measurement of quantum state between two-dimensional dots in quantum network are mainly dot-to-dot or dot-to-multi-dot transmission schemes. The existing experimental and theoretical work is relatively scattered, and the overall knowledge is incomplete. The article proposes the preparation of multiple quantum entanglement state, the measurement and classification of multi-state and multi-body quantum entanglement, the design of the preparation and measurement scheme of quantum state between any two one-dimensional dots and proposes the transmission scheme of quantum state between two-dimensional dots in quantum network. Theoretical guidance is provided for relevant experiments through deep study on the problem.
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34

Ablimit, Arapat, Dildar Hitjan e Ahmad Abliz. "Non-Markovian Dynamics of Geometric Quantum Discord in a Double Quantum Dot System". Journal of Low Temperature Physics 205, n. 3-4 (4 ottobre 2021): 126–34. http://dx.doi.org/10.1007/s10909-021-02621-8.

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AbstractIn this paper, we study the geometric quantum discord dynamics of the double quantum dot charge qubit in the non-Markovian environment. We apply the non-perturbative non-Markovian quantum state diffusion method to obtain the exact master equation of the double quantum dot system coupled to two independent non-zero temperature electronic baths. Then, we use this master equation to investigate the effects of non-Markovianity, inter-dot coupling strength and bath temperature on the dynamics of geometric quantum discord. Our studies show that the geometric quantum discord of a double quantum dot system can be modified and enhanced in some cases via these factors.
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35

Ablimit, Arapat, Dildar Hitjan e Ahmad Abliz. "Non-Markovian Dynamics of Geometric Quantum Discord in a Double Quantum Dot System". Journal of Low Temperature Physics 205, n. 3-4 (4 ottobre 2021): 126–34. http://dx.doi.org/10.1007/s10909-021-02621-8.

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AbstractIn this paper, we study the geometric quantum discord dynamics of the double quantum dot charge qubit in the non-Markovian environment. We apply the non-perturbative non-Markovian quantum state diffusion method to obtain the exact master equation of the double quantum dot system coupled to two independent non-zero temperature electronic baths. Then, we use this master equation to investigate the effects of non-Markovianity, inter-dot coupling strength and bath temperature on the dynamics of geometric quantum discord. Our studies show that the geometric quantum discord of a double quantum dot system can be modified and enhanced in some cases via these factors.
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36

Parthasarathy, Barath, Pial Mirdha, Jun Kondo e Faquir Jain. "Dual Quantum Dot Superlattice". International Journal of High Speed Electronics and Systems 27, n. 01n02 (marzo 2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

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In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).
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37

Dias, Eva A., Amy F. Grimes, Douglas S. English e Patanjali Kambhampati. "Single Dot Spectroscopy of Two-Color Quantum Dot/Quantum Shell Nanostructures". Journal of Physical Chemistry C 112, n. 37 (21 agosto 2008): 14229–32. http://dx.doi.org/10.1021/jp806621q.

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38

Solaimani, M. "Osscillating Binding Energy of a Donor Impurity Confined Within CdS-SiO2 Constant Total Effective Radius Multi-Shells Quantum Dots". International Journal of Nanoscience 15, n. 01n02 (febbraio 2016): 1650003. http://dx.doi.org/10.1142/s0219581x16500034.

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In this paper, we have studied the effect of a number of wells and quantum dot thickness on binding energy of a single donor impurity confined within a CdS-SiO2 constant total effective radius multi-shells quantum dot (CTER-MSQD) system. We have shown that impurity binding energy versus number of wells in a quantum dot with fixed outer radius oscillates when amplitude increases. By using well number variation, adding impurity and changing quantum dot radius as three tuning tools, localization of wave-functions in each part of the quantum dot along the radius has been now made possible. Finally, adding the impurity leads to more probability of finding the electrons in the wells near the center of the quantum dot.
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39

He, Zelong, Jiyuan Bai e Cheng Ma. "Conductance through a parallel-coupled double quantum dot with a side-coupled quantum dot system". Modern Physics Letters B 31, n. 09 (30 marzo 2017): 1750095. http://dx.doi.org/10.1142/s0217984917500956.

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Using the non-equilibrium Green’s function technique, conductance through a parallel-coupled double quantum dot (PCDQD) with a side-coupled quantum dot system is investigated. The evolution of the conductance strongly depends on the coupling between the side-coupled quantum dot and PCDQD. Moreover, the conductance as a function of the level of side-couple quantum dot is investigated. Numerical results indicate the lineshape of Fano resonance can be modulated by adjusting the interdot coupling strength.
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40

Liu, Hanwei, Baochuan Wang, Ning Wang, Zhonghai Sun, Huili Yin, Haiou Li, Gang Cao e Guoping Guo. "An automated approach for consecutive tuning of quantum dot arrays". Applied Physics Letters 121, n. 8 (22 agosto 2022): 084002. http://dx.doi.org/10.1063/5.0111128.

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Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between quantum dots and gate electrodes cause the manual tuning process to no longer be efficient. Fortunately, machine learning techniques can automate and speed up the tuning of simple quantum dot systems. In this Letter, we extend the techniques to tune multi-dot devices. We propose an automated approach that combines machine learning, virtual gates, and a local-to-global method to realize the consecutive tuning of quantum dot arrays by dividing them into subsystems. After optimizing voltage configurations and establishing virtual gates to control each subsystem independently, a quantum dot array can be efficiently tuned to the few-electron regime with appropriate interdot tunnel coupling strength. Our experimental results show that this approach can consecutively tune quantum dot arrays into an appropriate voltage range without human intervention and possesses broad application prospects in large-scale quantum dot devices.
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41

Ruitong Zhao, Ruitong Zhao, e Ruisheng Liang Ruisheng Liang. "Quantum information transfer between photonic and quantum-dot spin qubits". Chinese Optics Letters 14, n. 6 (2016): 062701–62705. http://dx.doi.org/10.3788/col201614.062701.

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42

Wang, Xue-Jiao, Shen-Qiang Zhai, Ning Zhuo, Jun-Qi Liu, Feng-Qi Liu, Shu-Man Liu e Zhan-Guo Wang. "Quantum dot quantum cascade infrared photodetector". Applied Physics Letters 104, n. 17 (28 aprile 2014): 171108. http://dx.doi.org/10.1063/1.4874802.

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43

Lodahl, Peter. "Quantum-dot based photonic quantum networks". Quantum Science and Technology 3, n. 1 (25 ottobre 2017): 013001. http://dx.doi.org/10.1088/2058-9565/aa91bb.

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44

Kamada, H., e H. Gotoh. "Quantum computation with quantum dot excitons". Semiconductor Science and Technology 19, n. 4 (12 marzo 2004): S392—S396. http://dx.doi.org/10.1088/0268-1242/19/4/129.

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45

Berrada, K. "Quantum coherence in quantum dot systems". Physica E: Low-dimensional Systems and Nanostructures 116 (febbraio 2020): 113784. http://dx.doi.org/10.1016/j.physe.2019.113784.

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46

Blood, Peter. "Quantum Efficiency of Quantum Dot Lasers". IEEE Journal of Selected Topics in Quantum Electronics 23, n. 6 (novembre 2017): 1–8. http://dx.doi.org/10.1109/jstqe.2017.2687039.

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47

Guo-Yi, Qin. "Phonons in Quantum-Dot Quantum Well". Communications in Theoretical Physics 42, n. 4 (15 ottobre 2004): 609–18. http://dx.doi.org/10.1088/0253-6102/42/4/609.

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48

Sanders, G. D., K. W. Kim e W. C. Holton. "Optically driven quantum-dot quantum computer". Physical Review A 60, n. 5 (1 novembre 1999): 4146–49. http://dx.doi.org/10.1103/physreva.60.4146.

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49

Lucignano, Procolo, Piotr Stefański, Arturo Tagliacozzo e Bogdan R. Bułka. "Quantum transport across multilevel quantum dot". Current Applied Physics 7, n. 2 (febbraio 2007): 198–204. http://dx.doi.org/10.1016/j.cap.2005.09.002.

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50

Humayun, M. A., M. A. Rashid, F. Malek, A. Yusof, F. S. Abdullah e N. B. Ahmad. "A Comparative Study of Confined Carrier Concentration of Laser Using Quantum well and Quantum Dot in Active Layer". Advanced Materials Research 701 (maggio 2013): 188–91. http://dx.doi.org/10.4028/www.scientific.net/amr.701.188.

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This paper presents a comparative analysis of some of the important characteristics of the carriers of quantum well and quantum dot based laser. Among the characteristics of the carriers, confined carrier concentrations in the gain medium as well as the carrier concentrations at the threshold have been studied extensively by using InxGa1-xN based quantum well and InxGa1-xN based quantum dot in the active layer of the laser structure. The numerical results obtained are compared to investigate the superiority of the quantum dot over quantum well. It is ascertained from the comparison results that InxGa1-xN based quantum dot provides higher density of confined carrier and lower level of carrier concentration required for lasing action. This paper reports the enhancement of confined carrier density and minimization of carrier concentration at threshold of laser using InxGa1-xN based quantum dot as the active layer material. Hence, it is revealed that better performances of lasers have been obtained using InxGa1-xN based quantum dot than that of quantum well in the active medium of the device structure.
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