Articoli di riviste sul tema "Polycrystalline semiconductors"
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Russell, G. J. "Polycrystalline semiconductors". Contemporary Physics 27, n. 5 (settembre 1986): 473–77. http://dx.doi.org/10.1080/00107518608211025.
Testo completoKim, Sunjae, Minje Kim, Jihyun Kim e Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, n. 7 (28 marzo 2023): 1199. http://dx.doi.org/10.3390/nano13071199.
Testo completoNorris, Kate J., Junce Zhang, David M. Fryauf, Elane Coleman, Gary S. Tompa e Nobuhiko P. Kobayashi. "Growth of Polycrystalline Indium Phosphide Nanowires on Copper". MRS Proceedings 1543 (2013): 131–36. http://dx.doi.org/10.1557/opl.2013.933.
Testo completoKa, O. "Electrical Transport in Polycrystalline Semiconductors". Solid State Phenomena 37-38 (marzo 1994): 201–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.201.
Testo completoSmith, David A., e C. S. Nichols. "Polycrystalline Semiconductors: Structure-Property Relationships". Solid State Phenomena 51-52 (maggio 1996): 105–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.105.
Testo completoTYAGI, B. P., e K. SEN. "Effective mobility of polycrystalline semiconductors". International Journal of Electronics 58, n. 1 (gennaio 1985): 83–89. http://dx.doi.org/10.1080/00207218508939004.
Testo completoSharma, R. P., A. K. Shukla, A. K. Kapoor, R. Srivastava e P. C. Mathur. "Hopping conduction in polycrystalline semiconductors". Journal of Applied Physics 57, n. 6 (15 marzo 1985): 2026–29. http://dx.doi.org/10.1063/1.334390.
Testo completoJones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu e S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications". Proceedings, annual meeting, Electron Microscopy Society of America 50, n. 2 (agosto 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.
Testo completoCAMPBELL, I. H., e D. L. SMITH. "ELECTRICAL TRANSPORT IN ORGANIC SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 11, n. 02 (giugno 2001): 585–615. http://dx.doi.org/10.1142/s0129156401000952.
Testo completoPavlov, A. N., e I. P. Raevskii. "Piezoresistive effect in polycrystalline ferroelectric semiconductors". Physics of the Solid State 44, n. 9 (settembre 2002): 1748–53. http://dx.doi.org/10.1134/1.1507260.
Testo completoHKH. "Polycrystalline semiconductors; physical properties and applications". Materials Research Bulletin 21, n. 5 (maggio 1986): 645–46. http://dx.doi.org/10.1016/0025-5408(86)90122-4.
Testo completoHossein-Babaei, Faramarz, Saeed Masoumi e Amirreza Noori. "Linking thermoelectric generation in polycrystalline semiconductors to grain boundary effects sets a platform for novel Seebeck effect-based sensors". Journal of Materials Chemistry A 6, n. 22 (2018): 10370–78. http://dx.doi.org/10.1039/c8ta02732c.
Testo completoLombos, B. A. "Deep levels in semiconductors". Canadian Journal of Chemistry 63, n. 7 (1 luglio 1985): 1666–71. http://dx.doi.org/10.1139/v85-279.
Testo completoMcKenan, Stuart, M. Grant Norton e C. Barry Carter. "Low-energy surfaces and interfaces in aluminum nitride". Proceedings, annual meeting, Electron Microscopy Society of America 48, n. 4 (agosto 1990): 350–51. http://dx.doi.org/10.1017/s0424820100174886.
Testo completoBuono, C., F. Schipani, M. A. Ponce e C. M. Aldao. "Intergranular barrier height fluctuations in polycrystalline semiconductors". physica status solidi c 14, n. 5 (15 marzo 2017): 1700069. http://dx.doi.org/10.1002/pssc.201700069.
Testo completoBuono, C., F. Schipani, M. A. Ponce e C. M. Aldao. "Intergranular barrier height fluctuations in polycrystalline semiconductors". physica status solidi c 14, n. 5 (15 marzo 2017): 1700069. http://dx.doi.org/10.1002/pssc.201700069.
Testo completoBuono, C., F. Schipani, M. A. Ponce e C. M. Aldao. "Intergranular barrier height fluctuations in polycrystalline semiconductors". physica status solidi c 14, n. 5 (15 marzo 2017): 1700069. http://dx.doi.org/10.1002/pssc.201700069.
Testo completoMcKernan, S., e C. B. Carter. "Structure of Grain Boundaries in Polycrystalline Semiconductors". Solid State Phenomena 37-38 (marzo 1994): 67–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.67.
Testo completoGarcia‐Cuenca, M. V., J. L. Morenza e J. M. Codina. "On the Hall effect in polycrystalline semiconductors". Journal of Applied Physics 58, n. 2 (15 luglio 1985): 1080–82. http://dx.doi.org/10.1063/1.336313.
Testo completoKesselring, R., A. W. K�lin e F. K. Kneub�hl. "Mid-infrared nonlinear phenomena in polycrystalline semiconductors". Applied Physics B Photophysics and Laser Chemistry 55, n. 5 (novembre 1992): 437–45. http://dx.doi.org/10.1007/bf00325184.
Testo completoDutta, J., D. Bhattacharyya, S. Chaudhuri e A. K. Pal. "Photoconductivity in polycrystalline semiconductors: Grain boundary effects". Solar Energy Materials and Solar Cells 36, n. 4 (aprile 1995): 357–68. http://dx.doi.org/10.1016/0927-0248(94)00187-1.
Testo completoBueno, Paulo R., José A. Varela e Elson Longo. "Admittance and dielectric spectroscopy of polycrystalline semiconductors". Journal of the European Ceramic Society 27, n. 13-15 (gennaio 2007): 4313–20. http://dx.doi.org/10.1016/j.jeurceramsoc.2007.02.155.
Testo completoWang, Yi-Fei, Hiroaki Iino e Jun-ichi Hanna. "Fabrication of planarly-oriented polycrystalline thin films of smectic liquid crystalline organic semiconductors". Soft Matter 13, n. 37 (2017): 6499–505. http://dx.doi.org/10.1039/c7sm01303e.
Testo completoMayén-Hernández, Sandra Andrea, David Santos-Cruz, Francisco de Moure-Flores, Sergio Alfonso Pérez-García, Liliana Licea-Jiménez, Ma Concepción Arenas-Arrocena, José de Jesús Coronel-Hernández e José Santos-Cruz. "Optical, Electrical and Photocatalytic Properties of the Ternary SemiconductorsZnxCd1-xS,CuxCd1-xSandCuxZn1-xS". International Journal of Photoenergy 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/158782.
Testo completoNguyen, Viet Huong, Ulrich Gottlieb, Anthony Valla, Delfina Muñoz, Daniel Bellet e David Muñoz-Rojas. "Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films". Materials Horizons 5, n. 4 (2018): 715–26. http://dx.doi.org/10.1039/c8mh00402a.
Testo completoRajbhandari, A., K. Manandhar e R. R. Pradhananga. "Mott-Schottky Analysis of Laboratory Prepared Ag2S-AgI Membrane Electrode". Journal of Nepal Chemical Society 28 (23 maggio 2013): 89–93. http://dx.doi.org/10.3126/jncs.v28i0.8113.
Testo completoDimitriadis, C. A. "The mobility of polycrystalline semiconductors under optical illumination". Journal of Physics D: Applied Physics 18, n. 11 (14 novembre 1985): 2241–46. http://dx.doi.org/10.1088/0022-3727/18/11/013.
Testo completoPalmer, Bruce J., e Roy Gordon. "Frequency-dependent conductivity in polycrystalline metals and semiconductors". Physical Review B 40, n. 17 (15 dicembre 1989): 11549–60. http://dx.doi.org/10.1103/physrevb.40.11549.
Testo completoYan, Yanfa, Wan-Jian Yin, Yelong Wu, Tingting Shi, Naba R. Paudel, Chen Li, Jonathan Poplawsky et al. "Physics of grain boundaries in polycrystalline photovoltaic semiconductors". Journal of Applied Physics 117, n. 11 (21 marzo 2015): 112807. http://dx.doi.org/10.1063/1.4913833.
Testo completoLandry, C. C., e A. R. Barron. "Synthesis of Polycrystalline Chalcopyrite Semiconductors by Microwave Irradiation". Science 260, n. 5114 (11 giugno 1993): 1653–55. http://dx.doi.org/10.1126/science.260.5114.1653.
Testo completoPavlov, A. N., e I. P. Raevski. "Nonlinear charge transport phenomena in polycrystalline ferroelectrics-semiconductors". Ferroelectrics 214, n. 1 (giugno 1998): 157–69. http://dx.doi.org/10.1080/00150199808220253.
Testo completoŠamaj, L. "Recombination processes at grain boundaries in polycrystalline semiconductors". Physica Status Solidi (a) 100, n. 1 (16 marzo 1987): 157–67. http://dx.doi.org/10.1002/pssa.2211000118.
Testo completoŠamaj, L. "The lifetime of minority carriers in polycrystalline semiconductors". Physica Status Solidi (a) 101, n. 1 (16 maggio 1987): 137–41. http://dx.doi.org/10.1002/pssa.2211010115.
Testo completoXu, Chencheng, Byungsul Min e Rolf Reineke-Koch. "Extended Tauc–Lorentz model (XTL) with log-normal distributed bandgap energies for optical permittivity in polycrystalline semiconductors". AIP Advances 12, n. 11 (1 novembre 2022): 115007. http://dx.doi.org/10.1063/5.0119256.
Testo completoMaji, Nilay, Bishnu Chakraborty e Tapan Kumar Nath. "Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector". Applied Physics Letters 122, n. 9 (27 febbraio 2023): 092404. http://dx.doi.org/10.1063/5.0133013.
Testo completoRau, U., e Jens Werner. "An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors". Solid State Phenomena 67-68 (aprile 1999): 553–58. http://dx.doi.org/10.4028/www.scientific.net/ssp.67-68.553.
Testo completoGould, R. O. "Polycrystalline semiconductors: physical properties and applicationsedited by G. Harbeke". Acta Crystallographica Section A Foundations of Crystallography 43, n. 1 (1 gennaio 1987): 160. http://dx.doi.org/10.1107/s0108767387099641.
Testo completoOZAWA, Yoshihito, Tatsuro YOSHIDA e Hisashi SATO. "709 Studies on the mechanical properties of polycrystalline semiconductors". Proceedings of Autumn Conference of Tohoku Branch 2010.46 (2010): 209–10. http://dx.doi.org/10.1299/jsmetohoku.2010.46.209.
Testo completoAntonucci, P. L., A. S. Aric�, N. Giordano e V. Antonucci. "Polycrystalline iron sulphide based semiconductors for solar energy conversion". Advanced Performance Materials 2, n. 2 (giugno 1995): 145–59. http://dx.doi.org/10.1007/bf00711268.
Testo completoGreuter, F., e G. Blatter. "Electrical properties of grain boundaries in polycrystalline compound semiconductors". Semiconductor Science and Technology 5, n. 2 (1 febbraio 1990): 111–37. http://dx.doi.org/10.1088/0268-1242/5/2/001.
Testo completoFishchuk, I. I. "Theory of the AC Hall effect in polycrystalline semiconductors". Journal of Physics: Condensed Matter 6, n. 14 (4 aprile 1994): 2747–50. http://dx.doi.org/10.1088/0953-8984/6/14/012.
Testo completoGavrilenko, V. I. "Electronic Structure and Optical Properties of Polycrystalline Cubic Semiconductors". physica status solidi (b) 139, n. 2 (1 febbraio 1987): 457–66. http://dx.doi.org/10.1002/pssb.2221390213.
Testo completoIaseniuc, O., M. Iovu, S. Rosoiu, M. Bardeanu, L. B. Enache, G. Mihai, O. Bordianu et al. "Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors". Chalcogenide Letters 19, n. 11 (30 novembre 2022): 841–46. http://dx.doi.org/10.15251/cl.2022.1911.841.
Testo completoCuervo Farfán, Javier A., Críspulo E. Deluque Toro, Carlos A. Parra Vargas, David A. Landínez Téllez e Jairo Roa-Rojas. "Experimental and theoretical determination of physical properties of Sm2Bi2Fe4O12 ferromagnetic semiconductors". Journal of Materials Chemistry C 8, n. 42 (2020): 14925–38. http://dx.doi.org/10.1039/d0tc02935a.
Testo completoAlyami, Mohammed, e Satam Alotibi. "Physical Properties of E143 Food Dye as a New Organic Semiconductor Nanomaterial". Nanomaterials 13, n. 13 (29 giugno 2023): 1974. http://dx.doi.org/10.3390/nano13131974.
Testo completoMasuda-Jindo, Kinichi, e Y. Fujita. "Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors". Solid State Phenomena 51-52 (maggio 1996): 27–32. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.27.
Testo completoMandowski, A., e J. Swiatek. "Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors". Solid State Phenomena 51-52 (maggio 1996): 367–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.367.
Testo completoPRASAD, B., e N. M. RAVINDRA. "Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations". International Journal of Electronics 60, n. 3 (marzo 1986): 381–94. http://dx.doi.org/10.1080/00207218608920794.
Testo completoMaldovan, Martin. "Thermal energy transport model for macro-to-nanograin polycrystalline semiconductors". Journal of Applied Physics 110, n. 11 (dicembre 2011): 114310. http://dx.doi.org/10.1063/1.3665211.
Testo completoLyu, Pin. "Intergrain magnetoresistance via spin-polarized tunneling in polycrystalline ferromagnetic semiconductors". Journal of Magnetism and Magnetic Materials 268, n. 1-2 (gennaio 2004): 251–56. http://dx.doi.org/10.1016/s0304-8853(03)00507-9.
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