Bibliografie tematiche / Polycrystalline semiconductors

Letteratura scientifica selezionata sul tema "Polycrystalline semiconductors"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 7 settembre 2023

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Articoli di riviste sul tema "Polycrystalline semiconductors"

Russell, G. J. "Polycrystalline semiconductors". Contemporary Physics 27, n. 5 (settembre 1986): 473–77. http://dx.doi.org/10.1080/00107518608211025.

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Kim, Sunjae, Minje Kim, Jihyun Kim e Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, n. 7 (28 marzo 2023): 1199. http://dx.doi.org/10.3390/nano13071199.

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The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

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Norris, Kate J., Junce Zhang, David M. Fryauf, Elane Coleman, Gary S. Tompa e Nobuhiko P. Kobayashi. "Growth of Polycrystalline Indium Phosphide Nanowires on Copper". MRS Proceedings 1543 (2013): 131–36. http://dx.doi.org/10.1557/opl.2013.933.

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ABSTRACTOur nation discards more than 50% of the total input energy as waste heat in various industrial processes such as metal refining, heat engines, and cooling. If we could harness a small fraction of the waste heat through the use of thermoelectric (TE) devices while satisfying the economic demands of cost versus performance, then TE power generation could bring substantial positive impacts to our society in the forms of reduced carbon emissions and additional energy. To increase the unit-less figure of merit, ZT, single-crystal semiconductor nanowires have been extensively studied as a building block for advanced TE devices because of their predicted large reduction in thermal conductivity and large increase in power factor. In contrast, polycrystalline bulk semiconductors also indicate their potential in improving overall efficiency of thermal-to-electric conversion despite their large number of grain boundaries. To further our goal of developing practical and economical TE devices, we designed a material platform that combines nanowires and polycrystalline semiconductors which are integrated on a metallic surface. We will assess the potential of polycrystalline group III-V compound semiconductor nanowires grown on low-cost copper sheets that have ideal electrical/thermal properties for TE devices. We chose indium phosphide (InP) from group III-V compound semiconductors because of its inherent characteristics of having low surface states density in comparison to others, which is expected to be important for polycrystalline nanowires that contain numerous grain boundaries. Using metal organic chemical vapor deposition (MOCVD) polycrystalline InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. We studied the growth mechanisms of polycrystalline InP nanowires on copper surfaces by analyzing their chemical, optical, and structural properties in comparison to those of single-crystal InP nanowires formed on single-crystal surfaces. We also assessed the potential of polycrystalline InP nanowires on copper surfaces as a TE material by modeling based on finite-element analysis to obtain physical insights of three-dimensional networks made of polycrystalline InP nanowires. Our discussion will focus on the synthesis of polycrystalline InP nanowires on copper surfaces and structural properties of the nanowires analyzed by transmission electron microscopy that provides insight into possible nucleation mechanisms, growth mechanisms, and the nature of grain boundaries of the nanowires.

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Ka, O. "Electrical Transport in Polycrystalline Semiconductors". Solid State Phenomena 37-38 (marzo 1994): 201–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.201.

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Smith, David A., e C. S. Nichols. "Polycrystalline Semiconductors: Structure-Property Relationships". Solid State Phenomena 51-52 (maggio 1996): 105–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.105.

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TYAGI, B. P., e K. SEN. "Effective mobility of polycrystalline semiconductors". International Journal of Electronics 58, n. 1 (gennaio 1985): 83–89. http://dx.doi.org/10.1080/00207218508939004.

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Sharma, R. P., A. K. Shukla, A. K. Kapoor, R. Srivastava e P. C. Mathur. "Hopping conduction in polycrystalline semiconductors". Journal of Applied Physics 57, n. 6 (15 marzo 1985): 2026–29. http://dx.doi.org/10.1063/1.334390.

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Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu e S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications". Proceedings, annual meeting, Electron Microscopy Society of America 50, n. 2 (agosto 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.

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CAMPBELL, I. H., e D. L. SMITH. "ELECTRICAL TRANSPORT IN ORGANIC SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 11, n. 02 (giugno 2001): 585–615. http://dx.doi.org/10.1142/s0129156401000952.

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Organic semiconductors have processing and performance advantages for low cost and/or large area applications that have led to their rapid commercialization. Organic semiconductors are π conjugated materials, either small molecules or polymers. Their electrical transport properties are fundamentally distinct from those of inorganic semiconductors. Organic semiconductor thin films are amorphous or polycrystalline and their electronic structures consist of a distribution of localized electronic states with different energies. The localized sites are either individual molecules or isolated conjugated segments of a polymer chain. Electrical transport results from carrier hopping between neighboring sites. At room temperature, equilibration between neighboring sites of different energy is fast enough that carrier transport can be described using a mobility picture. Hopping transport in these disordered systems leads to a mobility that can depend strongly on both the electric field and carrier density. This article presents experimental measurements and theoretical analysis of the electrical transport properties of representative organic semiconductors.

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Pavlov, A. N., e I. P. Raevskii. "Piezoresistive effect in polycrystalline ferroelectric semiconductors". Physics of the Solid State 44, n. 9 (settembre 2002): 1748–53. http://dx.doi.org/10.1134/1.1507260.

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Tesi sul tema "Polycrystalline semiconductors"

Burg, Tristan Kevin Materials Science &amp Engineering Faculty of Science UNSW. "Semiconducting properties of polycrystalline titanium dioxide". Publisher:University of New South Wales. Materials Science & Engineering, 2008. http://handle.unsw.edu.au/1959.4/41262.

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Titanium dioxide, TiO2, has potential applications as a photoelectrode for photoelectrochemical generation of hydrogen by splitting water using solar energy and as a photocatalyst for water purification. This study is part of the UNSW research program to process TiO2-based oxide semiconductors as high-performance photoelectrodes and photocatalysts. This study investigates the effect of defect disorder on semiconducting properties of polycrystalline TiO2. This study involved the processing of high-purity polycrystalline TiO2 and determination of its semiconducting properties through measurement of electrical conductivity and thermoelectric power at elevated temperatures (1073-1323K) in controlled oxygen activities [1x10-13 Pa < p(O2) < 75 kPa]. The study included two types of experiments: Determination of electrical properties under conditions of gas/solid equilibrium. The data obtained was used to derive defect disorder and related semiconducting properties Monitoring of electrical properties during equilibration. This data was used to determine the chemical diffusion coefficient. The data obtained under equilibrium conditions indicates that oxygen may be used as a dopant to impose controlled semiconducting properties. In reduced conditions TiO2 is an n-type semiconductor and under oxidizing conditions TiO2 is a p-type semiconductor. The n-type behaviour is associated with oxygen vacancies as the predominant defects and titanium interstitials as the minority defects. The p-type behaviour is closely related to titanium vacancies that are formed during prolonged oxidation. Charge transport at elevated temperature was shown to involve substantial contribution from ions. Analysis of electrical properties enabled determination of several defect-related quantities including the activation enthalpy for oxygen vacancy formation, and the activation energy of the electrical conductivity components related to electrons, holes and ions. The kinetic data obtained during gas/solid equilibration enabled determination of the chemical diffusion coefficient which exhibited a complex dependence on nonstoichiometry. In addition, prolonged oxidation showed that equilibration occurred in two kinetic regimes. One for highly mobile oxygen vacancies and titanium interstitials which quickly reached an ??operational equilibrium?? within hours and another slow kinetic regime for equilibration of titanium vacancies over many thousand hours. The determined chemical diffusion coefficient data may be used to select the processing conditions required to impose uniform concentration of defects within a TiO2.

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Karbasi, Hossein. "Deep level transient spectroscopy of heteroepitaxial polycrystalline diamond and aluminum nitride /". free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901245.

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Judson, Elizabeth Ann. "An analysis of preferred orientation in YBa₂ Cu₃ O₇ ₋ ₓ superconducting films deposited by CVD on single and polycrystalline substracts". Thesis, Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/8562.

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Golego, Nickolay. "Thin-film polycrystalline titanium-oxygen semiconductors prepared by spray pyrolysis". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ33300.pdf.

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Armstrong, Jeffrey Lee. "Reaction of carbonyl-and nitrogen-containing molecules on Si(100) and fluxless solder re-flow on polycrystalline Cu surfaces /". Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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Murphy, Robert Clayton. "Effects of material inhomogeneity on the terminal characteristics of polycrystalline silicon solar cells /". Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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Song, Dengyuan Centre for Photovoltaic Engineering UNSW. "Zinc oxide TCOs (Transparent Conductive Oxides) and polycrystalline silicon thin-films for photovoltaic applications". Awarded by:University of New South Wales. Centre for Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/29371.

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Transparent conductive oxides (TCOs) and polycrystalline silicon (poly-Si) thin-films are very promising for application in photovoltaics. It is extremely challenging to develop cheap TCOs and poly-Si films to make photovoltaic devices. The aim of this thesis is to study sputtered aluminum-doped ZnO TCO and poly-Si films by solid-phase crystallization (SPC) for application in low-cost photovoltaics. The investigated aspects have been (i) to develop and characterize sputtered aluminum-doped ZnO (ZnO:Al) films that can be used as a TCO material on crystalline silicon solar cells, (ii) to explore the potential of the developed ZnO:Al films for application in ZnO:Al/c-Si heterojunction solar cells, (iii) to make and characterize poly-Si thin-films on different kinds of glass substrates by SPC using electron-beam evaporated amorphous silicon (a-Si) [referred to as EVA poly-Si material (SPC of evaporated a-Si)], and (iv) to fabricate EVA poly-Si thin-film solar cells on glass and improve the energy conversion efficiency of these cells by post-crystallization treatments. The ZnO:Al work in this thesis is focused on the correlation between film characteristics and deposition parameters, such as rf sputter power (Prf), working gas pressure (Pw), and substrate temperature (Tsub), to get a clear picture of film properties in the optimized conditions for application in photovoltaic devices. Especially the laterally non-uniform film properties resulting from the laterally inhomogeneous erosion of the target material are investigated in detail. The influence of Prf, Pw and Tsub on the structural, electrical, optical and surface morphology properties of ZnO:Al films is discussed. It is found that the lateral variations of the parameters of ZnO:Al films prepared by rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. ZnO:Al/c-Si heterojunction solar cells are fabricated and characterized to demonstrate the feasibility of the fabricated ZnO:Al films for application in heterojunction solar cells. In this application, expensive indium-tin oxide (ITO) is usually used. Under the standard AM1.5G spectrum (100 mW/cm2, 25 ??C), the best fabricated cell shows an open-circuit voltage of 411 mV, a short-circuit current density of 30.0 mA/cm2, a fill factor of 66.7 %, and a conversion efficiency of 8.2 %. This is believed to be the highest stable efficiency ever reported for this type of cell. By means of dark forward current density-voltage-temperature (J-V-T) measurements, it is shown that the dominant current transport mechanism in the ZnO:Al/c-Si solar cells, in the intermediate forward bias voltage region, is trap-assisted multistep tunneling. EVA poly-Si thin-films are prepared on four types of glass substrates (planar and textured glass, both either bare or SiN-coated) based on evaporated Si, which is a cheaper Si deposition method than the existing technologies. The textured glass is realized by the UNSW-developed AIT process (AIT = aluminium-induced texture). The investigation is concentrated on finding optimized process parameters and evaluating film crystallization quality. It is found that EVA poly-Si films have a grain size in the range 0.8-1.5 ??m, and a preferential (111) orientation. UV reflectance and Raman spectroscopy measurements reveal a high crystalline material quality, both at the air-side surface and in the bulk. EVA cells are fabricated in both substrate and superstrate configuration. Special attention is paid to improving the Voc of the solar cells. For this purpose, after the SPC process, the samples receive the two post-crystallization treatments: (i) a rapid thermal anneal (RTA), and (ii) a plasma hydrogenation. It is found that two post-crystallization treatments more than double the 1-Sun Voc of the substrate-type cells. It is demonstrated that RTA improves the structural material quality of the cells. Furthermore, a hydrogenation step is shown to significantly improve the electronic material quality of the cells. Based on the RTA???d and hydrogenated EVA poly-Si material, the first mesa-type EVA cells are fabricated in substrate configuration, by using sputtered Al-doped ZnO as the transparent front contact. The investigation is focused on addressing the correlation between the type of the substrate and cell performance. Optical, electrical and photovoltaic properties of the devices are characterized. It is found that the performance of EVA cells depends on the glass substrate topography. For cells on textured glass, the AIT texture is shown to have a beneficial effect on the optical absorption of EVA films. It is demonstrated that a SiN barrier layer on the AIT-textured glass improves significantly both the crystalline quality of the poly-Si films and the energy conversion efficiency of the resulting solar cells. For cells on planar glass, a SiN film between the planar glass and the poly-Si film has no obvious effect on the cell properties. The investigations in this thesis clearly show that EVA poly-Si films are very promising for poly-Si thin-film solar cells on glass.

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Al-Ahmadi, Ahmad Aziz. "Fabrication and characterization of ZnO film by spray pyrolysis and ZnO polycrystalline sintered pellets doped with rear earth ions". Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1175017625.

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Khadilkar, Unmesh. "Modeling and Characterization of Polycrystalline Mercuric Iodide Radiation Detectors". [Tampa, Fla. : s.n.], 2003. http://purl.fcla.edu/fcla/etd/SFE0000088.

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Albin, David Scott. "Fabrication and structural, optical, and electrical characterization of multisource evaporated copper-gallium-selenide polycrystalline thin films". Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184745.

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Theoretical considerations for the use of chalcopyrite ternary I-III-VI₂ compounds in heterojunction photovoltaic conversion devices are presented, followed by an in-depth study of the structural, optical, and electrical characteristics of multi-source evaporated CuGaSe₂ thin films as determined by processing. Film composition was identified as the primary variable for affecting the microstructure and optical-electrical behavior of the films. Film composition was in turn dependent upon elemental flux rates and substrate related effects. Films deposited on glass and bare alumina substrates were richer in selenium than films deposited on molybdenum coated substrates. Cu-poor, near stoichiometeric, and Cu-rich compositions were obtained by varying the Cu/Ga flux ratio. Cu-poor films deposited on bare ceramic substrates were characterized by secondary impurity phase content and a tendency for cubic CuGaSe₂ formation. The cubic nature of optically thin films deposited on glass was substantiated by a lack of crystal field splitting of the valence band as observed by optical absorption measurements. Cubic-tetragonal phase behavior was monitored on optically opaque samples by observation of intensity-independent (112)/(111) x-ray diffraction peak shifts. Cu-poor films on glass were also characterized by surfaces pitting at substrate temperatures in excess of 450°C which may be related to the high surface energy of gallium. Cu-poor films deposited on molybdenum coated alumina substrates exhibited less impurity phase formation and were largely single-phase tetragonal CuGaSe₂. Cu-rich films on all substrates contained CuₓSe impurities and tetragonal CuGaSe₂.

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Libri sul tema "Polycrystalline semiconductors"

Möller, Hans J., Horst P. Strunk e Jürgen H. Werner, a cura di. Polycrystalline Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1.

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Harbeke, Günther, a cura di. Polycrystalline Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82441-8.

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Werner, Jürgen H., e Horst P. Strunk, a cura di. Polycrystalline Semiconductors II. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4.

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Möller, Hans J. Polycrystalline Semiconductors: Grain Boundaries and Interfaces. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989.

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Valeri, Ligatchev, a cura di. Polycrystalline and spatially non-homogenous amorphous semiconductors. Hauppauge, N.Y: Nova Science Publishers, 2008.

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Günther, Harbeke, e International School on Material Science and Technology (1984 : Erice, Italy), a cura di. Polycrystalline semiconductors: Physical properties and applications : proceedings of the International School at the Ettore Majorana Centre, Erice, Italy, July 1-15, 1984. Berlin: Springer-Verlag, 1985.

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International School of Materials Science and Technology (1984 Ettore Majorana Centre). Polycrystalline semiconductors: Physical properties and applications : proceedings of the International School of Materials Science and Technology at the Ettore Majorana Centre, Erice, Italy, July 1-15, 1984. A cura di Harbeke Günther. Berlin: Springer-Verlag, 1985.

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POLYSE 2000 (2000 Saint-Malo, France). Polycrystalline semiconductors VI: Materials, technologies, and large area electronics : proceedings of the sixth international conference, Saint Malo, September 3-7, 2000. A cura di Bonnaud O. Switzerland: Scitec Publications Ltd., 2001.

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1952-, Werner J. H., Strunk H. P. 1940- e International Conference on Polycrystalline Semiconductors: Grain Boundaries, Dislocations, and Heterointerfaces (1990 : Schwäbisch Hall, Germany), a cura di. Polycrystalline semiconductors II: Proceedings of the Second International Conference, Schwäbisch Hall, Fed. Rep. of Germany, July 30-August 3, 1990. Berlin: Springer-Verlag, 1991.

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Symposium A, "Amorphous and Polycrystalline Thin-film Silicon Science and Technology" (2006 San Francisco, Calif.). Amorphous and polycrystalline thin-film silicon science and technology, 2006: Symposium held April 18-21, 2006 San Francisco, California U.S.A. A cura di Wagner S. (Sigurd). Warrendale, Penn: Materials Research Society, 2007.

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Capitoli di libri sul tema "Polycrystalline semiconductors"

Mach, R. "Electroluminescence in Polycrystalline Semiconductors". In Springer Series in Solid-State Sciences, 186–208. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82441-8_11.

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Hu, Hao, Jun Liu e Guangda Niu. "Perovskite Polycrystalline Film for X-Ray Imaging". In Metal-Halide Perovskite Semiconductors, 323–43. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26892-2_15.

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Grätzel, M. "Photocatalysis with Colloidal Semiconductors and Polycrystalline Films". In Photocatalysis and Environment, 367–98. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3015-5_13.

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Donolato, C. "Beam Induced Current Characterization in Polycrystalline Semiconductors". In Springer Series in Solid-State Sciences, 138–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82441-8_8.

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Borisenko, Victor E., e Peter J. Hesketh. "Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon". In Rapid Thermal Processing of Semiconductors, 93–111. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4899-1804-8_3.

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Pizzini, S., N. Buttà e M. Acciarri. "Surface and Internal Surface Effects in Polycrystalline Semiconductors". In Springer Proceedings in Physics, 178–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_24.

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Spachmann, J., E. Lüder, T. Kallfaß e W. Otterbach. "Thin Film Transistors and Light Sensors with Polycrystalline CdSe-Semiconductors". In Springer Proceedings in Physics, 262–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_36.

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Pizzini, S., F. Borsani, A. Sandrinelli, D. Narducci e F. Allegretti. "Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon". In Point and Extended Defects in Semiconductors, 105–21. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_8.

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Kazmerski, L. L. "Atomic-Level Imaging and Microanalysis of Grain Boundaries in Polycrystalline Semiconductors". In Springer Proceedings in Physics, 96–107. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_13.

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Schock, H. W. "Polycrystalline Compound Semiconductor Thin Films in Solar Cells". In Springer Proceedings in Physics, 246–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_34.

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Atti di convegni sul tema "Polycrystalline semiconductors"

Keyes, B. M., K. A. Emery e R. K. Ahrenkiel. "Minority-carrier lifetime of compound semiconductors: Polycrystalline CdTe". In Photovoltaic advanced research and development project. AIP, 1992. http://dx.doi.org/10.1063/1.42907.

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Mohaidat, J. M. "Inter-granular electrical transport in polycrystalline semiconductors via tunneling mechanism". In Proceedings of International Conference on Microelectronics (ICM'99). IEEE, 2000. http://dx.doi.org/10.1109/icm.2000.884853.

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Hu, B. B., J. T. Darrow, N. M. Froberg, X. C. Zhang e D. H. Auston. "Generation of ultrafast electromagnetic radiation". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fn1.

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A large variety of semiconductor samples have been used to generate highly directional, optically steerable, and diffraction-limited ultrafast electromagnetic radiation. Samples have been selected from III-V, II-VI, and group IV semiconductors, including single-crystal, polycrystalline, and amorphous structures. We have compared the optically induced radiated fields from different semiconductor surfaces (interfaces), including an air/semiconductor interface, a metal/semiconductor interface, a p-n junction (solar cell), and a strain-induced piezoelectric layer. In addition, we report the temperature dependence of optically induced electromagnetic pulses. When the surface depletion width was tuned to cross the optical absorption length by varying the sample temperature, a dramatic change of the radiation waveform from the narrow-bandgap semiconductors was observed. We also observed a three-fold rotation symmetry of the radiation from (111)-oriented samples. Finally, we describe the conversion efficiency of optically induced electromagnetic radiation from these samples.

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Sheik-Bahae, M., J. Wang, E. J. Canto-Said, R. De Salvo, D. J. Hagan e E. W. Van Stryland. "Four-wave-mixing two-photon coherence in semiconductors". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/oam.1993.fh.4.

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Using a standard backward phase-conjugate degenerate four-wave-mixing (DFWM) geometry, we have measured the dependence of the DFWM signal on the polarization of the interacting fields for a number of polycrystalline (i.e. isotropic) semiconductors and dielectrics within their transparency region.

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Alegre, M. P., M. P. Villar, D. Araújo, E. Bustarret, T. Capron, O. A. Williams, Gabriel Ferro e Paul Siffert. "TEM study of superconducting polycrystalline diamond". In 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518279.

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Kosel, Peter B., D. Wu, A. M. Dalton, Amir A. Hanjani, S. F. Carr, P. R. Emmert e R. L. C. Wu. "UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond". In Photonics West '96, a cura di Gail J. Brown e Manijeh Razeghi. SPIE, 1996. http://dx.doi.org/10.1117/12.237698.

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Jeong, K. S., Y. M. Kim, J. G. Park, S. D. Yang, Y. S. Kim, G. W. Lee, Jisoon Ihm e Hyeonsik Cheong. "Active-layer thickness effects related with microstructure, electrical properties and flicker noise in polycrystalline ZnO thin film transistors". In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666662.

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Corrales-Mendoza, I., Victor-Tapio Rangel-Kuoppa e A. Conde-Gallardo. "Transport properties of Nd[sub 1−x]Fe[sub x]OF polycrystalline films". In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848274.

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Vasilyev, S., V. Smolski, I. Moskalev, J. Peppers, M. Mirov, Y. Barnakov, D. Martyshkin, V. Fedorov, S. Mirov e V. Gapontsev. "Frontiers of Ultrafast Mid-IR Lasers Based on Polycrystalline TM:II-VI Semiconductors". In Advanced Solid State Lasers. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/assl.2020.aw4a.1.

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Kobori, H., A. Hoshino, T. Taniguchi, T. Horie, Y. Naitoh e T. Shimizu. "Two-current spin-dependent conduction in polycrystalline LaMnO[sub 3] produced under oxygen gas flow". In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848421.

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