Articoli di riviste sul tema "Poly-Si"
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Geng, X. H., J. M. Xue, H. C. Ge, H. B. Li, Z. P. Wang, Q. Z. Wang e H. Z. Ren. "Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells". Solar Energy Materials and Solar Cells 75, n. 3-4 (febbraio 2003): 489–95. http://dx.doi.org/10.1016/s0927-0248(02)00200-3.
Testo completoChao, T. S., C. L. Lee e T. F. Lei. "Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer". Electronics Letters 29, n. 13 (1993): 1157. http://dx.doi.org/10.1049/el:19930774.
Testo completoChao, T. S., C. L. Lee, T. F. Lei e Y. T. Yen. "Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement". Electronics Letters 28, n. 12 (1992): 1144. http://dx.doi.org/10.1049/el:19920722.
Testo completoKee-Chan Park, Kwon-Young Choi, Juhn-Suk Yoo e Min-Koo Han. "A new poly-Si thin-film transistor with poly-Si/a-Si double active layer". IEEE Electron Device Letters 21, n. 10 (ottobre 2000): 488–90. http://dx.doi.org/10.1109/55.870610.
Testo completoMin, Byung-Hyuk, Cheol-Min Park, Juhn-Suk Yoo e Min-Koo Han. "A new poly-Si TFT to improve surface roughness at poly-oxide/poly-Si interface". Physica Scripta T69 (1 gennaio 1997): 229–32. http://dx.doi.org/10.1088/0031-8949/1997/t69/047.
Testo completoMaksimov, S. K. "HREM investigations of Si/SiO2/poly-si compositions". Proceedings, annual meeting, Electron Microscopy Society of America 48, n. 4 (agosto 1990): 580–81. http://dx.doi.org/10.1017/s0424820100176034.
Testo completoBoehringer, M., J. E. Pillion, V. Erdmann, M. Rygula, K. Winz, P. Brauchle, D. Aquino et al. "Effect of Copper on the Breakthrough Voltage of Poly-Si - Poly-Si Capacitors". Solid State Phenomena 76-77 (gennaio 2001): 279–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.279.
Testo completoChang, C. Y., Y. D. Wang, F. C. Tzeng, C. T. Chen e S. J. Wang. "An isolated Al-poly Si-(p)Si-(n+)Si switching device". Solid-State Electronics 29, n. 7 (luglio 1986): 735–37. http://dx.doi.org/10.1016/0038-1101(86)90159-0.
Testo completoLin, Horng-Chih. "Poly-Si Nanowire Device Technology". Nanoscience &Nanotechnology-Asia 1, n. 2 (1 dicembre 2011): 109–22. http://dx.doi.org/10.2174/2210681211101020109.
Testo completoLin, Horng-Chih. "Poly-Si Nanowire Device Technology". Nanoscience & Nanotechnology-Asiae 1, n. 2 (1 dicembre 2011): 109–22. http://dx.doi.org/10.2174/2210682011101020109.
Testo completoAyres, J. R., S. D. Brotherton, I. R. Clarence e P. J. Dobson. "Photocurrents in poly-Si TFTs". IEE Proceedings - Circuits, Devices and Systems 141, n. 1 (1994): 27. http://dx.doi.org/10.1049/ip-cds:19949952.
Testo completoKim, I. G., H. H. Lee, D. H. Kim, W. Y. Park, B. H. Min, J. H. Souk e B. H. Jung. "53.3: Multisync Poly-Si AMLCD". SID Symposium Digest of Technical Papers 31, n. 1 (2000): 1199. http://dx.doi.org/10.1889/1.1832879.
Testo completoWon, Sunghwan. "Poly Si TFT on Microsheet". ECS Transactions 25, n. 3 (17 dicembre 2019): 255–58. http://dx.doi.org/10.1149/1.3204413.
Testo completoBrotherton, SD, DJ McCulloch, JP Gowers e A. Gill. "Laser crystallised poly-Si TFTs". Microelectronic Engineering 19, n. 1-4 (settembre 1992): 101–4. http://dx.doi.org/10.1016/0167-9317(92)90401-c.
Testo completoGudmundsson, V., P.-E. Hellström, S.-L. Zhang e M. Östling. "Direct measurement of sidewall roughness on Si, poly-Si and poly-SiGe by AFM". Journal of Physics: Conference Series 100, n. 6 (1 marzo 2008): 062021. http://dx.doi.org/10.1088/1742-6596/100/6/062021.
Testo completoHoriuchi, Toshikazu, Wen Ma, Chin Chou Lim, Masashi Yoshimi, Kiminori Hattori, Chitose Sada, Hiroaki Okamoto e Yoshihiro Hamakawa. "High Efficiency a-Si//poly-Si Tandem Solar Cell". IEEJ Transactions on Power and Energy 113, n. 9 (1993): 1046–52. http://dx.doi.org/10.1541/ieejpes1990.113.9_1046.
Testo completoHoriuchi, Toshikazu, Wen Ma, C. C. Lim, Masashi Yoshimi, Kiminori Hattori, Chitose Sada, Hiroaki Okamoto e Yoshihiro Hamakawa. "High efficiency a-Si//poly-Si tandem solar cell". Electrical Engineering in Japan 114, n. 5 (1994): 75–81. http://dx.doi.org/10.1002/eej.4391140509.
Testo completoPark, Taegun, e Sangwoo Lim. "Reaction Kinetics of Poly-Si Etching in TMAH Solution". Solid State Phenomena 314 (febbraio 2021): 60–65. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.60.
Testo completoEmori, Kenta, Toshiharu Marui, Yuji Saito, Wei Ni, Yasushi Nakajima, Tetsuya Hayashi e Masakatsu Hoshi. "Novel Poly-Si/GaN Vertical Heterojunction Diode". Materials Science Forum 821-823 (giugno 2015): 1015–18. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.1015.
Testo completoByung-Hyuk Min, Cheol-Min Park e Min-Koo Han. "Electrical characteristics of poly-Si TFT's with smooth surface roughness at oxide/poly-Si interface". IEEE Transactions on Electron Devices 44, n. 11 (1997): 2036–38. http://dx.doi.org/10.1109/16.641379.
Testo completoLee, Seung Ryul, Kyung Min Ahn e Byung Tae Ahn. "Silicon Epitaxial Growth on Poly-Si Film by HWCVD for Low-Temperature Poly-Si TFTs". Journal of The Electrochemical Society 154, n. 9 (2007): H778. http://dx.doi.org/10.1149/1.2752030.
Testo completoAkimoto, H., M. Hatano e T. Sakai. "30.4: Short-Channel Effect of Sub-Micron Poly-Si TFTs with Large Poly-Si Grains". SID Symposium Digest of Technical Papers 29, n. 1 (1998): 891. http://dx.doi.org/10.1889/1.1833907.
Testo completoChoi, Y. J., W. K. Kwak, S. J. Park, S. Y. Yoon, C. O. Kim e J. Jang. "A Low Temperature Poly-Si TFT with a SMC Poly-Si Crystallized at 420 °C". SID Symposium Digest of Technical Papers 30, n. 1 (1999): 508. http://dx.doi.org/10.1889/1.1834069.
Testo completoMaegawa, S., T. Ipposhi, S. Maeda, H. Nishimura, T. Ichiki, M. Ashida, O. Tanina, Y. Inoue, T. Nishimura e N. Tsubouchi. "Performance and reliability improvements in poly-Si TFT's by fluorine implantation into gate poly-Si". IEEE Transactions on Electron Devices 42, n. 6 (giugno 1995): 1106–12. http://dx.doi.org/10.1109/16.387244.
Testo completoPyo, Jeongsang, Bohae Lee e Han-Youl Ryu. "Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry". Micromachines 12, n. 8 (22 agosto 2021): 999. http://dx.doi.org/10.3390/mi12080999.
Testo completoKang, Seung Oh, Uk June Lee, Seung Hyun Kim, Ho Jung You, Kun Park, Sung Eun Park e Jong Hoon Park. "Gas Nozzle Effect on the Deposition of Polysilicon by Monosilane Siemens Reactor". International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/697653.
Testo completoParizotto, R., e H. Boudinov. "Irradiation effects of proton bombarded poly-Si/SiO2/Si structure". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 218 (giugno 2004): 362–67. http://dx.doi.org/10.1016/j.nimb.2003.12.060.
Testo completoLyou, Jonghun, Kyung-Sik Yoon, Eun Kyu Kim e Suk-Ki Min. "Structural change and photo-response in porous poly-Si/Si". Thin Solid Films 358, n. 1-2 (gennaio 2000): 259–63. http://dx.doi.org/10.1016/s0040-6090(99)00715-4.
Testo completoFocsa, A., I. Gordon, G. Beaucarne, O. Tuzun, A. Slaoui e J. Poortmans. "Heterojunction a-Si/poly-Si solar cells on mullite substrates". Thin Solid Films 516, n. 20 (agosto 2008): 6896–901. http://dx.doi.org/10.1016/j.tsf.2007.12.097.
Testo completoLih, Jiin-Jou, Chih-Feng Sung, Chun-Huai Li, Tiao-Hung Hsiao e Hsin-Hung Lee. "Comparison of a-Si and Poly-Si for AMOLED displays". Journal of the Society for Information Display 12, n. 4 (2004): 367. http://dx.doi.org/10.1889/1.1847734.
Testo completoKwon, Kijin, Yoshinori Matsumoto, Makoto Ishida e Sekwang Park. "Three Dimensional Polysilicon Type Accelerometer Using Poly-Si/SiO2/Si/SiO2/Si Structure." IEEJ Transactions on Sensors and Micromachines 117, n. 7 (1997): 384–90. http://dx.doi.org/10.1541/ieejsmas.117.384.
Testo completoIbaraki, N. "Low Temperature Poly-Si TFT Technology". SID Symposium Digest of Technical Papers 30, n. 1 (1999): 172. http://dx.doi.org/10.1889/1.1833987.
Testo completoWatanabe, H. "Depletion Layer of Gate Poly-Si". IEEE Transactions on Electron Devices 52, n. 10 (ottobre 2005): 2265–71. http://dx.doi.org/10.1109/ted.2005.856791.
Testo completoShen, Haoting, Fahim Rahman, Bicky Shakya, Xiaolin Xu, Mark Tehranipoor e Domenic Forte. "Poly-Si-Based Physical Unclonable Functions". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25, n. 11 (novembre 2017): 3207–17. http://dx.doi.org/10.1109/tvlsi.2017.2733531.
Testo completoChung, Hoon-Ju, Seung-Woo Lee e Chul-Hi Han. "Poly-Si TFT push-pull analogue buffer for integrated data drivers of poly-Si TFT-LCDs". Electronics Letters 37, n. 17 (2001): 1093. http://dx.doi.org/10.1049/el:20010710.
Testo completoKwangsoo Choi e M. Matsumura. "Poly-Si/poly-SiC/sub x/ heterojunction thin-film transistors". IEEE Transactions on Electron Devices 45, n. 2 (1998): 401–5. http://dx.doi.org/10.1109/16.658673.
Testo completoNakabayashi, N., H. Ohyama, E. Simoen, M. Ikegami, C. Claeys, K. Kobayashi, M. Yoneoka e K. Miyahara. "Mechanical stress of the electrical performance of polycrystalline-silicon resistors". Journal of Materials Research 16, n. 9 (settembre 2001): 2579–82. http://dx.doi.org/10.1557/jmr.2001.0354.
Testo completoStepina, N. P., V. V. Kirienko, A. V. Dvurechenskii, S. A. Alyamkin, V. A. Armbrister e A. V. Nenashev. "Selective oxidation of poly-Si with embedded Ge nanocrystals in Si/SiO2/Ge(NCs)/poly-Si structure for memory device fabrication". Semiconductor Science and Technology 24, n. 2 (9 gennaio 2009): 025015. http://dx.doi.org/10.1088/0268-1242/24/2/025015.
Testo completoMuhida, Riza, Toshihiko Toyama e Hiroaki Okamoto. "Influence of Surface Morphology of Textured Substrate against Poly-Si Thin Film Solar Cells Performance". Materials Science Forum 737 (gennaio 2013): 105–9. http://dx.doi.org/10.4028/www.scientific.net/msf.737.105.
Testo completoKim, Hyeonjeong, Songyi Yoo, In-Man Kang, Seongjae Cho, Wookyung Sun e Hyungsoon Shin. "Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM". Micromachines 11, n. 2 (23 febbraio 2020): 228. http://dx.doi.org/10.3390/mi11020228.
Testo completoMoser, M., L. P. Scheller e N. H. Nickel. "Charge carrier transport in boron doped poly-Si". Canadian Journal of Physics 92, n. 7/8 (luglio 2014): 705–8. http://dx.doi.org/10.1139/cjp-2013-0563.
Testo completoToko, Kaoru, Mitsuki Nakata, Atsushi Okada, Masato Sasase, Noritaka Usami e Takashi Suemasu. "Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization". International Journal of Photoenergy 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/790242.
Testo completoJun, M. C., J. W. Kim, K. B. Kim, B. C. Ahn e M. K. Han. "Improved Surface Roughness at Poly-Oxide/Poly-Si Interface by a Novel Oxidation Method". MRS Proceedings 343 (1994). http://dx.doi.org/10.1557/proc-343-505.
Testo completoSakamoto, T., H. Tokioka, S. Takanabe, T. Kubota, Y. Niwano, Y. Goto, H. Namizaki, O. Wada e H. Kurokawa. "Structural and Electrical Characterization of Undoped Poly-Si Oxides". MRS Proceedings 358 (1994). http://dx.doi.org/10.1557/proc-358-933.
Testo completo"Poly Si TFT on Microsheet". ECS Meeting Abstracts, 2009. http://dx.doi.org/10.1149/ma2009-02/22/1985.
Testo completoKim, Y. W., I. K. Kim, N. I. Lee, J. W. Ko, S. T. Ahn, M. Y. Lee e J. G. Lee. "Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film". MRS Proceedings 280 (1992). http://dx.doi.org/10.1557/proc-280-599.
Testo completoPark, Kee-Chan, In-Hyuk Song, Sang-Hoon Jung e Min-Koo Han. "Excimer Laser Annealing Effect on MILC Polycrystalline Silicon Film". MRS Proceedings 685 (2001). http://dx.doi.org/10.1557/proc-685-d3.5.1.
Testo completoPark, C.-M., J.-S. Yoo, B.-H. Min e M.-K. Han. "The Poly-Si Tfts Fabricated by Novel Oxidation Method with Intermediate Oxide". MRS Proceedings 424 (1996). http://dx.doi.org/10.1557/proc-424-183.
Testo completoChen, Shih-Chang, Akihiro Sakamoto, Hiroyuki Tamura, Masaki Yoshimaru e Masayoshi Ino. "The Effect of Amorphous Silicon Layer in Pe-Cvd Titanium Polycide Gate Dielectrics". MRS Proceedings 181 (1990). http://dx.doi.org/10.1557/proc-181-179.
Testo completoChen, Shih-Chang, Akihiro Sakamoto, Hiroyuki Tamura, Masaki Yoshimaru e Masayoshi Ino. "The Effect of Amorphous Silicon Layer in PE-CVD Titanium Polycide Gate Dielectrics". MRS Proceedings 182 (1990). http://dx.doi.org/10.1557/proc-182-77.
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