Bibliografie tematiche / Photon assisted carrier generation

Letteratura scientifica selezionata sul tema "Photon assisted carrier generation"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 12 febbraio 2022

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Articoli di riviste sul tema "Photon assisted carrier generation"

Wang, Muguang, Yu Tang, Jian Sun, Jing Zhang, Qi Ding, Beilei Wu e Fengping Yan. "Photonic-assisted FSK signal generation based on carrier phase-shifted double sideband modulation". Chinese Optics Letters 19, n. 10 (2021): 103901. http://dx.doi.org/10.3788/col202119.103901.

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Hattori, Yocefu, Jie Meng, Kaibo Zheng, Ageo Meier de Andrade, Jolla Kullgren, Peter Broqvist, Peter Nordlander e Jacinto Sá. "Phonon-Assisted Hot Carrier Generation in Plasmonic Semiconductor Systems". Nano Letters 21, n. 2 (8 gennaio 2021): 1083–89. http://dx.doi.org/10.1021/acs.nanolett.0c04419.

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Storasta, L., R. Aleksiejūnas, M. Sūdžius, Arunas Kadys, T. Malinauskas, Kęstutis Jarašiūnas, Björn Magnusson e Erik Janzén. "Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals". Materials Science Forum 483-485 (maggio 2005): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.409.

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We applied four-wave mixing (FWM) technique for investigation of high temperaturechemical vapour deposition (HTCVD) grown 4H-SiC samples with different doping levels. The determined minority electron and hole mobilities in heavily doped crystals at doping densities of 1019 cm-3 were found to be equal to 116 and 52 cm2/Vs. In semi-insulating (SI) crystals, the ambipolar diffusion coefficient Da = 2.6 − 3.3 cm2/s and carrier lifetimes of 1.5 – 2.5 ns have been measured. Irradiation of SI crystals by 6 MeV electrons resulted in essential decrease of carrier lifetime down to ~ 100 ps and clearly revealed the defect-assisted carrier generation with respect to two-photon interband transitions before irradiation.

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Feng, M., E. W. Iverson, C. Y. Wang e N. Holonyak. "Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution". Applied Physics Letters 107, n. 18 (2 novembre 2015): 181108. http://dx.doi.org/10.1063/1.4935121.

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Ramazani, Ali, Farzaneh Shayeganfar, Jaafar Jalilian e Nicholas X. Fang. "Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study". Nanophotonics 9, n. 2 (25 febbraio 2020): 337–49. http://dx.doi.org/10.1515/nanoph-2019-0363.

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AbstractExciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron–phonon and electron–electron (e–e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information.

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Davids, Paul S., Jared Kirsch, Andrew Starbuck, Robert Jarecki, Joshua Shank e David Peters. "Electrical power generation from moderate-temperature radiative thermal sources". Science 367, n. 6484 (20 febbraio 2020): 1341–45. http://dx.doi.org/10.1126/science.aba2089.

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Moderate-temperature thermal sources (100° to 400°C) that radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.

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Boltersdorf, Jonathan, Asher C. Leff, Gregory T. Forcherio e David R. Baker. "Plasmonic Au–Pd Bimetallic Nanocatalysts for Hot-Carrier-Enhanced Photocatalytic and Electrochemical Ethanol Oxidation". Crystals 11, n. 3 (25 febbraio 2021): 226. http://dx.doi.org/10.3390/cryst11030226.

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Gold–palladium (Au–Pd) bimetallic nanostructures with engineered plasmon-enhanced activity sustainably drive energy-intensive chemical reactions at low temperatures with solar simulated light. A series of alloy and core–shell Au–Pd nanoparticles (NPs) were prepared to synergistically couple plasmonic (Au) and catalytic (Pd) metals to tailor their optical and catalytic properties. Metal-based catalysts supporting a localized surface plasmon resonance (SPR) can enhance energy-intensive chemical reactions via augmented carrier generation/separation and photothermal conversion. Titania-supported Au–Pd bimetallic (i) alloys and (ii) core–shell NPs initiated the ethanol (EtOH) oxidation reaction under solar-simulated irradiation, with emphasis toward driving carbon–carbon (C–C) bond cleavage at low temperatures. Plasmon-assisted complete oxidation of EtOH to CO2, as well as intermediary acetaldehyde, was examined by monitoring the yield of gaseous products from suspended particle photocatalysis. Photocatalytic, electrochemical, and photoelectrochemical (PEC) results are correlated with Au–Pd composition and homogeneity to maintain SPR-induced charge separation and mitigate the carbon monoxide poisoning effects on Pd. Photogenerated holes drive the photo-oxidation of EtOH primarily on the Au-Pd bimetallic nanocatalysts and photothermal effects improve intermediate desorption from the catalyst surface, providing a method to selectively cleave C–C bonds.

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Rana, Abu ul Hassan Sarwar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Daniel Adjei Agyeman, Faizan Ghani, In Wook Nah e Areej Shahid. "Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance". Nanomaterials 10, n. 1 (13 gennaio 2020): 142. http://dx.doi.org/10.3390/nano10010142.

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Hitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV sensor efficiency. In this study, we undertake this task by fabricating an intrinsic defect-prone hydrothermally grown ZNRs (S1), Ga-doped ZNRs (S2), and defect-free microwave-assisted grown ZNRs (S3). The defect states were recognized by studying X-ray diffraction and photoluminescence characteristics. The large number of crystal defects in S1 and S2 had two pronged disadvantages. (1) Most of the UV light was absorbed by the defect traps and the e–h pair generation was compromised. (2) Mobility was directly affected by the carrier–carrier scattering and phonon scattering processes. Hence, the overall UV sensor efficiency was compromised based on the defect-induced mobility-response model. Considering the facts, defect-free S3 exhibited the best UV sensor performance with the highest on/off ratio, the least impulse response time, the highest recombination time, and highest gain-induced responsivity to 368 nm UV light, which was desired of an efficient passive metal oxide-based UV sensor. Our results were compared with the recently published results.

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Wang, Ji-Chao, Weina Shi, Xue-Qin Sun, Fang-Yan Wu, Yu Li e Yuxia Hou. "Enhanced Photo-Assisted Acetone Gas Sensor and Efficient Photocatalytic Degradation Using Fe-Doped Hexagonal and Monoclinic WO3 Phase−Junction". Nanomaterials 10, n. 2 (24 febbraio 2020): 398. http://dx.doi.org/10.3390/nano10020398.

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The development of WO3-based gas sensors for analysis of acetone in exhaled breath is significant for noninvasive diagnosis of diabetes. A series of Fe-doped hexagonal and monoclinic WO3 phase−junction (Fe−h/m−WO3) sensors were synthesized by the hydrothermal calcination method, and the influences of operating temperature and light irradiation on the response were studied. Under light emitting diode (LED) illumination, Fe−h/m−WO3 exhibited higher responses to acetone than those of the undoped WO3-based sensors at an operating temperature of 260 °C with 90% relative humidity, and good linearity between response and acetone concentration (0.5 to 2.5 ppm) was achieved under the 90% relative humidity condition. Meanwhile, the optimal Fe−h/m−WO3 sensor exhibited high selectivity and stability for a duration of three months. The excellent sensing performance of Fe−h/m−WO3 was attributed to the formation of phase−junction and Fe doping, and these were beneficial for the separation of photon−generated carriers and oxygen adsorption on the WO3 surface, promoting the generation of superoxide radicals, which was demonstrated by electron paramagnetic resonance and photocurrent tests. Additionally, the Fe−doped WO3 phase−junction sample also showed good photocatalytic performance for rhodamine B degradation. This study may provide some insights into rational design of new types of gas sensors and offer an alternative for noninvasive diagnosis of diabetes.

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Ščajev, Patrik, Vytautas Gudelis, Eugeny Ivakin e Kęstutis Jarašiūnas. "Nonequilibrium carrier dynamics in bulk HPHT diamond at two-photon carrier generation". physica status solidi (a) 208, n. 9 (10 agosto 2011): 2067–72. http://dx.doi.org/10.1002/pssa.201100006.

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Più fonti

Tesi sul tema "Photon assisted carrier generation"

Meitzner, Karl. "Heterojunction-Assisted Impact Ionization and Other Free Carrier Dynamics in Si, ZnS/Si, and ZnSe/Si". Thesis, University of Oregon, 2015. http://hdl.handle.net/1794/19294.

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With increasing global energy demand and diminishing fossil fuel supplies, the development of clean and affordable renewable energy technology is more important than ever. Photovoltaic devices harvest the sun’s energy to produce electricity and produce very little pollution compared to nonrenewable sources. In order to make these devices affordable, however, technological advances are required. In this dissertation a novel photovoltaic device architecture that is designed to enhance sunlight-to-electricity conversion efficiency of photovoltaics is proposed and demonstrated. The increase in efficiency arises due to enhancement of the internal quantum efficiency of photoexcitation in the semiconductor absorber. In other words, the probability that the absorption of a single photon will produce two or more electron-hole pairs, instead of just one, is increased. This occurs through the process of impact ionization, by which a highly excited charge carrier (via absorption of a high energy photon) relaxes by excitation of a second electron-hole pair. The result is an increased photocurrent, and efficiency, of the photovoltaic device. Using thin films of ZnS on Si substrates, we demonstrate that the probability of impact ionization is enhanced at the (unbiased) heterojunction between these layers. The magnitude of enhancement depends on material properties, including crystallinity of the ZnS film as well as concentration of oxygen (impurity) at the interface. Thin films of ZnSe on Si substrates do not exhibit heterojunction-assisted impact ionization, but they do display promising characteristics that make them an intriguing system for future work. The same is true for ZnS/Si materials fabricated by O2-free chemical bath deposition. For the analysis of plain Si as well as ZnS/Si and ZnSe/Si heterostructures, we employ a novel pump-probe transient transmission and reflection spectroscopy technique. A method is demonstrated for using this technique to quantify internal quantum efficiency as well as interface recombination velocity in each of these materials. In bulk silicon, a free carrier absorption cross section that depends on free carrier concentration (above 1018 cm-3) is observed and the relationship is quantified. This dissertation includes unpublished and previously published co-authored material.

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Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM". Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.

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We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

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Hamad, Hassan. "Détermination des coefficients d'ionisation de matériaux à grand gap par génération multi-photonique". Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0017/document.

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L’utilisation des semi-conducteurs à large bande interdite (wide bandgap ou WBG) tels que le carbure de silicium SiC, le nitrure de gallium GaN, le diamant, etc… s’est répandue dans le domaine de l’électronique de puissance ces dernières décennies. Leurs caractéristiques électroniques et mécaniques font des WBGs des solutions alternatives pour remplacer le traditionnel silicium. Cependant, des études supplémentaires sont indispensables pour améliorer la tenue en tension, les pertes statiques et dynamiques et les performances en fonctionnement à haute température des composants WBGs. Dans ce cadre, deux bancs expérimentaux OBIC (Optical Beam Induced Current) spécifiques « en cours de développement » sont mis en place pendant cette thèse. L’OBIC consiste à éclairer avec un faisceau laser de longueur d’onde appropriée une jonction polarisée en inverse, des porteurs de charge sont alors créés par absorption photonique. On peut alors mesurer un courant induit par faisceau optique (OBIC) lorsque les porteurs sont générés dans la zone de charge d’espace. Après une première phase de préparation et d’adaptation de l’environnement expérimental, des essais ont mené à la démonstration du principe de génération multi-photonique en éclairant une jonction SiC avec un faisceau vert (532 nm). L’analyse des différentes mesures OBIC nous a permis de construire une image du champ électrique à la surface de la diode : une analyse non destructive pour étudier l’efficacité des protections périphériques des jonctions et pour détecter les défauts dans la structure cristalline. Egalement, la durée de vie des porteurs minoritaires a été déduite par l’analyse de la décroissance du courant OBIC au bord de la jonction. Les coefficients d’ionisation sont également déterminés par la méthode OBIC, ces coefficients sont des paramètres clés pour la prévision de la tension de claquage des composants. Nous avons réalisé des mesures OBIC dans le GaN, et nous avons observé un effet d’absorption bi-photonique dans le diamant avec un faisceau UV (349 nm)
In the last few decades, the use of wide bandgap (WBG) semiconductors (silicon carbide SiC, gallium nitride GaN, diamond, etc…) has become popular in the domain of power electronics. Their electronic and mechanical characteristics made of the WBGs a good alternative to the traditional silicon. However, additional studies are mandatory to improve the breakdown voltage, static and dynamic losses, and the performance at high temperature of the WBG devices. In this context, two specific experimental benches OBIC (Optical Beam Induced Current) -under development- are set up during this thesis. OBIC method consists to generate free charge carriers in a reverse biased junction by illuminating the device with an appropriate wavelength. An OBIC signal is measured if the charge carriers are generated in the space charge region. After a first phase of preparation and adaptation of the experimental environment, OBIC measurements led to demonstrate the multi-photonic generation by illuminating a SiC junction with a green laser (532 nm). OBIC measurements allowed giving an image of the electric field at the surface of the diode: OBIC presents a non-destructive analysis to study the efficiency of the peripheral protection and to detect the defects in the semi-conductor. Minority carrier lifetime was also deduced by studying the OBIC decrease at the edge of the space charge region. Ionization rates were extracted using OBIC method; these coefficients are key parameters to predict the breakdown voltage of the devices. OBIC measurements were also realized on the GaN, and two-photon generation was highlighted by measuring an OBIC current in the diamond when illuminating it with a UV laser beam (349 nm)

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Tritsch, John Russell. "Electron dynamics in nanomaterials for photovoltaic applications by time-resolved two-photon photoemission". 2013. http://hdl.handle.net/2152/21695.

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The impetus of unsustainable consumption coupled with major environmental concerns has renewed our society's investment in new energy production methods. Solar energy is the poster child of clean, renewable energy. Its favorable environmental attributes have greatly enhanced demand resulting in a spur of development and innovation. Photovoltaics, which convert light directly into usable electrical energy, have the potential to transform future energy production. The benefit of direct conversion is nearly maintenance free operation enabling deployment directly within urban centers. The greatest challenge for photovoltaics is competing economically with current energy production methods. Lowering the cost of photovoltaics, specifically through increasing the conversion efficiency of the active absorbing layer, may enable the invisible hand to bypass bureaucracy. To accomplish the ultimate goal of increased efficiency and lowered cost, it is essential to develop new material systems that provide enhanced output or lowered cost with respect to current technologies. However, new materials require new understanding of the physical principles governing device operation. It is my hope that elucidating the dynamics and charge transfer mechanisms in novel photovoltaic material systems will lead to enhanced design principles and improved material selection. Presented is the investigation of electron dynamics in two materials systems that show great promise as active absorbers for photovoltaic applications: inorganic semiconductor quantum dots and organic semiconductors. Common to both materials is the strong Coulomb interaction due to quantum confinement in the former and the low dielectric constant in the latter. The perceived enhancement in Coulomb interaction in quantum dots is believed to result in efficient multiexciton generation (MEG), while discretization of electronic states is proposed to slow hot carrier cooling. Time-resolved two-photon photoemission (TR2PPE) is utilized to directly map out the hot electron cooling and multiplication dynamics in PbSe quantum dots. Hot electron cooling is found to proceed on ultrafast time scales (< 2ps) and carrier multiplication proceeds through an inefficient bulk-like interband scattering. In organic semiconductors, the strong Coulomb interaction leads to bound electron-hole pairs called excitons. TR2PPE is used to monitor the separation of excitons at the model CuPc/C₆₀ interface. Exciton dissociation is determined to proceed through "hot" charge transfer states that set a fundamental time limit on charge separation. TR2PPE is used to investigate charge and energy transfer from organic semiconductors undergoing singlet fission, an analog of multiple exciton generation. The dynamic competition between one and two-electron transfer is determined for the tetracene/C₆₀ and tetracene/CuPc interfaces. These findings allow for the formulation of design principles for the successful harvesting of hot or multiple carriers for solar energy conversion.
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Capitoli di libri sul tema "Photon assisted carrier generation"

Pevzner, V. B., V. L. Gurevich, K. Hess e G. J. Iafrate. "Phonon Generation in Nanowires and Non-ohmic Phonon-Assisted Landauer Resistance". In Hot Carriers in Semiconductors, 239–42. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_55.

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Nozik, Arthur J., e Olga I. Mićić*. "Quantum Dots and Quantum Dot Arrays: Synthesis, Optical Properties, Photogenerated Carrier Dynamics, Multiple Exciton Generation, and Applications to Solar Photon Conversion". In Nanocrystal Quantum Dots, 311–68. CRC Press, 2017. http://dx.doi.org/10.1201/9781420079272-9.

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Tiwari, Sandip. "Light interactions with semiconductors". In Semiconductor Physics, 454–92. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0012.

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This chapter examines how electromagnetic waves—light, photons—interact with semiconductors through coupling between the electromagnetic wave and dipoles of various kinds and analyzed via a dipole interaction Hamiltonian. Phenomena in the energy range of micro eV to several eVs are explored, stressing surface interactions, absorption, emission and luminescence. The first involves coupled plasmon interactions. Absorption and emission arise across energy and through multiple mechanisms. Free carrier processes are pronounced for low energy. Direct electron-photon interactions—a direct transition—can involve allowed transitions and forbidden transitions across the gap. Indirect transitions of both these varieties can arise in phonon-assisted processes. Oscillator strength is fleshed out. Field dependence, doping dependence and temperature dependence are analyzed, broadening the discussion to the Franz-Keldysh effect as well as dependence due to impurities, excitons, plasmons and crystal oscillations, to unravel the dielectric function and reflectivity’s behavior at high frequencies and restrahlen often observed.

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Lee, Byunghong, e Robert Bob Chang. "A New Generation of Energy Harvesting Devices". In Solar Cells [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.94291.

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This chapter has been mainly focused on the development and fabrication of various nanostructured materials for electrochemical energy conversion, specially, third generation (3rd) thin film photovoltaic system such as organic dye or perovskite -sensitized Solar Cells. Enormous efforts have been dedicated to the development of a variety of clean energy, capable of harvesting energy of various forms. Among the various energy forms, electrochemical devices that produce electric energy from chemical energy have received the most attention as the most promising power sources. In the majority of cases, researchers who come from the different background could engage on certain aspects of the components to improve the photovoltaic performances from different disciplines: (i) chemists to design and synthesize suitable donor–acceptor dyes and study structure–property relationships; (ii) physicists to build solar cell devices with the novel materials, to characterize and optimize their performances, and to understand the fundamental photophysical processes; and (iii) engineers to develop new device architectures. The synergy between all the disciplines will play a major role for future advancements in this area. However, the simultaneous development of all components such as photosensitizers, hole transport layer, photoanodes and cost effective cathode, combined with further investigation of transport dynamics, will lead to Photovoltaic cells, 30%. Herein, in this book, with taking optimized processing recipe as the standard cell fabrication procedure, imporant breakthough for each components is achieved by developing or designing new materials, concepts, and fabrication technique. This book report the following studies: (i) a brief introduction of the working principle, (ii) the detailed study of the each component materials, mainly including TiO2 photoanode under the category of 0D and 3D structures, strategies for co-sensitization with porphyrin and organic photosensitizers, and carbon catalytic material via controlled fabrication protocols and fundamental understanding of the working principles of electrochemical photovoltaic cell has been gained by means of electrical and optical modelling and advanced characterization techniques and (iii) new desgined stratages such as the optimization of photon confinement (iv) future prospects and survival stratagies for sensitizer assisted solar cell (especially, DSSC).

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Atti di convegni sul tema "Photon assisted carrier generation"

Glowacki, Arkadiusz, Carlo Pagano, Christian Boit, Yoshiyuki Yokoyama, Arkadiusz Jankowski e Philippe Perdu. "Photon Emission Spectra through Silicon of Various Thicknesses". In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0164.

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Abstract In this work we present spectrally resolved photon emission microscopy (SPEM) measurements originating from short-channel MOSFETs acquired through the backside of the silicon substrate. Two commonly used detectors have been chosen for the detection of electroluminescence (EL) in the visible and near-infrared spectral regime, namely Si-CCD and InGaAs. As the backside photon emission (PE) inspection is strongly influenced by the absorption of light in a substrate material, the SPEM experiments have been carried out through thinned silicon layers as obtained by mechanical grinding and local focused-ion-beam (FIB) assisted Si material removal. Intrinsic Si absorption (generation of electron-hole pairs) and absorption on free carriers have been modeled to be able to calibrate experimental results and obtain devicerelated PE spectra. The results show no evidences of specific transitions and lead to a conclusion that photon emission from MOSFETs is fully electrical field related.

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Siregar, Masbah R. T., e Lamhot Hutagalung. "Dynamics of carrier generation by photon absorption in semiconductor gallium arsenide". In INTERNATIONAL CONFERENCE ON THEORETICAL AND APPLIED PHYSICS (LCTAP 2012). AIP, 2013. http://dx.doi.org/10.1063/1.4820984.

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Klimentov, Sergei M., Serge V. Garnov, Alexander S. Epifanov, Alexander A. Manenkov e D. M. Sagatelyan. "Two-photon spectroscopy of free-carrier generation in wide-band gap crystals". In Laser-Induced Damage in Optical Materials: 1996, a cura di Harold E. Bennett, Arthur H. Guenther, Mark R. Kozlowski, Brian E. Newnam e M. J. Soileau. SPIE, 1997. http://dx.doi.org/10.1117/12.274252.

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Alvarez Ocampo, C. A., e Rodrigo Acuna Herrera. "Nondegenerate Two Photon Carrier Generation in Multiple Quantum Well for the C-Band Telecommunication". In Frontiers in Optics. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/fio.2017.jw3a.17.

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Vidavskii, A. E., Valeri I. Kovalev e V. M. Raukhman. "DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range". In Laser Optics '95, a cura di Vladimir E. Sherstobitov. SPIE, 1996. http://dx.doi.org/10.1117/12.238051.

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Völk, Stefan, Florian J. R. Schülein, Florian Knall, Achim Wixforth, Hubert J. Krenner, Arne Laucht, Jonathan J. Finley et al. "Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation". In OPTO, a cura di Kurt G. Eyink, Frank Szmulowicz e Diana L. Huffaker. SPIE, 2010. http://dx.doi.org/10.1117/12.842511.

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Huang, Chun-Yuan, e Yi-Hsiu Hsieh. "Tunneling-assisted carrier transfer in pentacene-based thin-film transistors with a MoO3 buffer layer". In 2018 7th International Symposium on Next Generation Electronics (ISNE). IEEE, 2018. http://dx.doi.org/10.1109/isne.2018.8394623.

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Chekalin, Sergey V., M. S. Kurdoglyan, Anatoly N. Oraevsky, N. F. Starodubtsev, Arkady P. Yartsev e Villy Sundstrom. "Femtosecond pump-probe investigation of primary stages of charge carrier generation in pure and Sn- and Ti- doped C60 films". In PECS'2001: Photon Echo and Coherent Spectroscopy, a cura di Vitaly V. Samartsev. SPIE, 2001. http://dx.doi.org/10.1117/12.447961.

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Mehrotra, Akhil, Gopi K. Vijaya e Alex Freundlich. "Drift-diffusion modeling of a superlattice p-i-n device with resonant conduction-band assisted photon absorption and carrier". In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925102.

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House, Ralph L., Brian P. Mehl, Chuan Zhang, Justin R. Kirschbrown, Scott C. Barnes e John M. Papanikolas. "Investigation of ultrafast carrier dynamics in ZnO rods using two-photon emission and second harmonic generation microscopy". In SPIE NanoScience + Engineering, a cura di Oliver L. A. Monti e Oleg V. Prezhdo. SPIE, 2009. http://dx.doi.org/10.1117/12.826064.

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