Bibliografie tematiche / P-type GaAs

Letteratura scientifica selezionata sul tema "P-type GaAs"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 1 febbraio 2022

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Articoli di riviste sul tema "P-type GaAs"

1

Fuyuki, Takuma, Shota Kashiyama, Kunishige Oe e Masahiro Yoshimoto. "Interface States in p-Type GaAs/GaAs1-xBixHeterostructure". Japanese Journal of Applied Physics 51, n. 11S (1 novembre 2012): 11PC02. http://dx.doi.org/10.7567/jjap.51.11pc02.

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Stichtenoth, D., K. Wegener, C. Gutsche, I. Regolin, F. J. Tegude, W. Prost, M. Seibt e C. Ronning. "P-type doping of GaAs nanowires". Applied Physics Letters 92, n. 16 (21 aprile 2008): 163107. http://dx.doi.org/10.1063/1.2912129.

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Xie, Zhijian, e S. A. Lyon. "Ballistic transport in p-type GaAs". Applied Physics Letters 75, n. 14 (4 ottobre 1999): 2085–87. http://dx.doi.org/10.1063/1.124924.

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Nathan, M. I., W. P. Dumke, K. Wrenner, S. Tiwari, S. L. Wright e K. A. Jenkins. "Electron mobility in p‐type GaAs". Applied Physics Letters 52, n. 8 (22 febbraio 1988): 654–56. http://dx.doi.org/10.1063/1.99395.

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Moutonnet, D. "Photochemical pattern on p-type GaAs". Materials Letters 6, n. 1-2 (novembre 1987): 34–36. http://dx.doi.org/10.1016/0167-577x(87)90097-8.

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Dong, Boqun, Andrei Afanasev, Rolland Johnson e Mona Zaghloul. "Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves". Sensors 20, n. 8 (24 aprile 2020): 2419. http://dx.doi.org/10.3390/s20082419.

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Abstract (sommario):
We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.
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Bagraev, Nikolai T. "Metastable Surface Defects in p-Type GaAs". Materials Science Forum 143-147 (ottobre 1993): 543–48. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.543.

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Ito, Hiroshi, e Tadao Ishibashi. "Surface Recombination Velocity in p-Type GaAs". Japanese Journal of Applied Physics 33, Part 1, No.1A (15 gennaio 1994): 88–89. http://dx.doi.org/10.1143/jjap.33.88.

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Lodha, Saurabh, e David B. Janes. "Metal/molecule/p-type GaAs heterostructure devices". Journal of Applied Physics 100, n. 2 (15 luglio 2006): 024503. http://dx.doi.org/10.1063/1.2210569.

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Kidalov, V. V. "Optical properties of p-type porous GaAs". Semiconductor physics, quantum electronics and optoelectronics 8, n. 4 (15 dicembre 2005): 118–20. http://dx.doi.org/10.15407/spqeo8.04.118.

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Tesi sul tema "P-type GaAs"

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Klochan, Oleh V. Physics Faculty of Science UNSW. "Ballistic transport in one-dimensional p-type GaAs devices". Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/35186.

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In this thesis we study GaAs one dimensional hole systems with strong spin-orbit interaction effects. The primary focus is the Zeeman splitting of 1D subbands in the two orthogonal in-plane magnetic field directions. We study two types of 1D hole systems based on different (311)A grown heterostructures: a modulation doped GaAs/AlGaAs square quantum well and an undoped induced GaAs/AlGaAs triangular quantum well. The results from the modulation doped 1D wire show enhanced anisotropy of the effective Lande g-factor for the two in-plane field directions (parallel and perpendicular to the wire), compared to that in 2D hole systems. This enhancement is explained by the confinement induced reorientation of the total angular momentum ^ J from perpendicular to the 2D plane to in-plane and parallel to the wire. We use the intrinsic anisotropy of the in-plane g-factors to probe the 0:7 structure and the zero bias anomaly in 1D hole wires. We find that the behaviour of the 0:7 structure and the ZBA are correlated and depend strongly on the orientation of the in-plane field. This result proves the connection between the 0:7 and the ZBA and their relation to spin. We fabricate the first induced hole 1D wire with extremely stable gate characteristics and characterize this device. We also fabricate devices with two orthogonal induced hole wires on one chip, to study the interplay between the confinement, crystallographic anisotropy and spin-orbit coupling and their effect on the Zeeman splitting. We find that the ratios of the g-factors in the two orthogonal field directions for the two wires show opposite behaviour. We compare absolute values of the g-factors relative to the magnetic field direction. For B || [011] the g-factor is large for the wire along [011] and small for the wire along [233]. Whereas for B || [233], the g-factors are large irrespective of the wire direction. The former result can be explained by reorientation of ^ J along the wire, and the latter by an additional off-diagonal Zeeman term, which leads to the out-of-plane component of ^ J when B || [233], and as a result, to enhanced g-factors via increased exchange interactions.
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Grbić, Boris. "Hole transport and spin-orbit coupling in p-type GaAs nanostructures". kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29710.

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Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices". Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five experimental studies aimed at either directly exploring the properties of the above three interaction phenomena or the development of novel device structures that exploit the strong particle-particle interactions found in p-GaAs for the study of many body phenomena. Firstly, we demonstrate a novel semiconductor-insulator-semiconductor field effect transistor (SISFET), designed specifically to induced 2D hole systems at a ????normal???? AlGaAs-on-GaAs heterojunction. The novel SISFETs feature in our studies of the metallic behavior in 2D systems in which we examine temperature corrections to ????xx(T) and ????xy(T) in short- and long-range disorder potentials. Next, we shift focus to bilayer hole systems and the many body quantum Hall states that form a nu = 1 in the presence of strong interlayer interactions. We explore the evolution of this quantum Hall state as the relative densities in the layers is imbalanced while the total density is kept constant. Finally, we demonstrate a novel p-type quantum point contact device that produce the most stable and robust current quantization in a p-type 1D systems to date, allowing us to observed for the first time the 0.7 structure in a p-type device.
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Saha, Uttam Kumar. "Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs". Ohio University / OhioLINK, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230.

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Liu, Gordon Gang. "Electrochemical behaviour of gallium arsenide". Thesis, University of British Columbia, 1991. http://hdl.handle.net/2429/30080.

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Polarization behaviours of copper diffused p-type GaAs was studied in 1. 0M NaCl and 1. 0M NaNO₃ by means of pitting scan and linear sweep potentiodynamic polarization techniques. The thermodynamic potential-pH diagram of the GaAs-H₂O system was constructed. The observed electrode behaviours of GaAs were compared and correlated to the potential-pH diagram. Freely corroding potential, passivation behaviour and pitting potential were examined as a function of a number of factors. These included the effects of different annealing and polishing pretreatments, the bulk solution pH and polarization methods. The corrosion potential (Ecorr) , pitting potential (Epit) and passivation behaviour were affected by the different pretreatments which changed the surface condition of GaAs. For mechanically polished samples, pitting corrosion was found in pH 7.0 solution only. The Ecorr and Eplt were independent of NO₃⁻ and Cl⁻ at pH 7.0. Initial polarization behaviour of p-GaAs at pH 2.0 and 12.0 followed the Tafel Law for semiconductors quite well. There was a reasonable correlation between the experimental observations and the potential-pH diagram of GaAs-H₂O system. SEM images of polarized samples showed that pits formed in NaCl and NaNO₃ had a different shape, being more elongated in NaCl. However, the walls of all pits appeared to be composed of {111} planes. In general, the pit distribution appeared to be similar to the dislocation distribution. A model of pitting corrosion of GaAs was proposed based on strain induced breakdown of the oxide film, localized changes in solution chemistry and the structure of the compound semiconductor.
Applied Science, Faculty of
Materials Engineering, Department of
Graduate
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Rahbi, Rania. "Etude de la diffusion de l'hydrogène et des interactions hydrogène accepteur dans gaas de type p". Paris 7, 1991. http://www.theses.fr/1991PA077075.

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L'exposition de semi-conducteurs gaas de type p à un plasma radio fréquence d'hydrogène entraîne une diffusion d'hydrogène dans le matériau. L'analyse qualitative des profils de diffusion du deutérium conduit à la conclusion que l'hydrogène diffuse relativement librement dans les matériaux peu dopés et interagit fortement avec les accepteurs lorsque le taux de dopage est élevé. Ceci est valable aussi bien pour les accepteurs de la colonne 2 que pour ceux de la colonne 4. La diffusion de l'hydrogène dans les matériaux gaas dopés zinc, silicium et germanium entraîne une diminution de la concentration de trous libres et une augmentation de leur mobilité. Cette augmentation est le signe d'une neutralisation des accepteurs actifs par transformation de ces accepteurs en entités neutres. Le modèle proposé décrit ces entités neutres comme des complexes hydrogène dopants. Cet effet de neutralisation persiste lors de recuits thermiques jusqu'à des températures critiques dépendant de la nature de l'accepteur. La neutralisation la plus stable est obtenue dans le cas de gaas dope carbone. Par spectroscopie d'absorption infrarouge, nous avons mis en évidence des raies d'absorption associées au mode de vibration de l'hydrogène lie présent dans les complexes hydrogène accepteur. Nous avons montré que la structure microscopique des complexes dépendait du site de l'accepteur dans le réseau. Compte tenu que l'hydrogène diffusé sous une forme chargée positive, nous avons supposé que l'hydrogène introduisait un niveau donneur dans la bande interdite de gaas de type p et que le proton subissait des phénomènes de piégeages et de dé piégeages au cours de sa diffusion. A partir d'un modèle qui utilise ces hypothèses nous avons modélisé les profils de diffusion du deutérium dans gaas dope zinc. Nous avons montré, pour la première fois, que l'effet de neutralisation des accepteurs par l'hydrogène pouvait être utilisé pour réaliser des guides d'ondes optiques à base de gaas hydrogène. Les caractéristiques de ces guides d'ondes sont tout à fait encourageantes
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JOURDAN, NICOLAS. "Etude des dopants de type p pour l'epitaxie par jets moleculaires de transistors bipolaires a heterostructure gaas/gaa1as". Paris 7, 1991. http://www.theses.fr/1991PA077047.

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Ce travail presente l'etude des dopants de type-p (be,c) pour l'epitaxie par jets moleculaires afin de fabriquer des transistors bipolaires a heterostructure gaas/ga#1#-#xal#xas tres performants. En ce qui concerne le dopant be, une etude des differents mecanismes de redistribution de l'impurete a ete entreprise. L'optimisation des parametres de croissance (temperature de croissance, rapport des flux v/iii, vitesse de croissance) a permis: 1) une augmentation de la longueur de diffusion des porteurs minoritaires dans la base associee a une amelioration de la qualite de la couche et 2) une importante minimisation de la diffusion du dopant durant des recuits a haute temperature (800c) apres croissance. Dans la seconde partie de ce travail, nous avons mis au point une cellule permettant d'evaporer du c a partir d'une source solide de graphite chauffee par effet joule direct. Des niveaux de dopages de type p jusqu'a 8 10#1#9 cm#-#3 ont ete obtenus. Cette etude a confirme le tres faible coefficient de diffusion du c comparativement aux impuretes conventionnelles ce type p (zn, be). Les proprietes de transport des porteurs minoritaires dans les couches dopees c epitaxiees par jets moleculaires classiques sont malgre tout restees tres faibles et n'ont pas permis d'obtenir dans l'etat actuel des composants performants. Nous pensons que ceci est du a la presence d'impuretes etrangeres, en particulier le fe, le cr et le cu dans la source de graphite, qui viennent s'incorporer dans la couche durant la croissance. Ces impuretes sont des centres profonds dans gaas. Des traitements specifiques de la source de graphite ont ete mis au point de facon a reduire la concentration de ces impuretes
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Benarfa, Houria. "Proprietes de photoluminescence de gaas : contribution a l'etude de gaas heteroepitaxie sur (ca,sr)f2 par la technique des jets moleculaires". Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0019.

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ANALYSE DE LA PHOTOLUMINESCENCE DE STRUCTURES GaAs/(Ca,Sr))F2/GaAs, A FLUORURE ACCORDE EN MAILLE AU GAAS; INFLUENCE DES PARAMETRES DE CROISSANCE ET DE LA DISTANCE A L'INTERFACE. COMPARAISON DES PERFORMANCES DE SEMICONDUCTEUR HETEROEPITAXIE A CELLES DE GAAS EPITAXIE; ETUDE DE COUCHES DE GAAS EPITAXIE SUR CAF2 MASSIF
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Pant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications". University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures". Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and complicated valence band structure involved. Germanium is known to have the largest hole mobility of all the known semiconductors and is considered most suitable to fabricate high speed p-type devices. Moreover, it is also possible to integrate germanium and its alloy (Si1_zGex ) into the existing silicon technology. With the use of sophisticated growth techniques it has been possible to grow epitaxial layers of silicon and germanium on Si1_zGex alloy layers grown on silicon substrates. In tills thesis we investigate in detail the electrical properties of p-type germanium and n-type silicon thin films grown by these techniques. It is important to do a comparative study of transport in these two systems not only to understand the physics involved but also to study their compatibility in complementary field effect devices (cMODFET). The studies reported in this thesis lay emphasis both on the low and high field transport properties of these systems. We report experimental data for the maximum room temperature mobility of holes achieved m germanium thin films grown on Si1_zGex layers that is comparable to the mobility of electrons in silicon films. We also report experiments performed to study the high field degradation of carrier mobility due to "carrier heating" in these systems. We also report studies on the effect of lattice heating on mobility of carriers as a function of applied electric field. To understand the physics behind the observed phenomenon, we model our data based on the existing theories for low and high field transport. We report complete numerical calculations based on these theories to explain the observed qualitative difference in the transport properties of p-type germanium and ii-type silicon systems. The consistency between the experimental data and theoretical modeling reported in this work is very satisfactory.
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Capitoli di libri sul tema "P-type GaAs"

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Heuring, W., E. Bangert, G. Landwehr, G. Weimann e W. Schlapp. "p-Type GaAs-(GaAI)As Heterostructures in Tilted Magnetic Fields: Theory and Experiments". In High Magnetic Fields in Semiconductor Physics II, 190–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_30.

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Landwehr, G. "Transport Properties of p-Type GaAs-(GaAl)As Heterojunctions in High Magnetic Fields". In Springer Series in Solid-State Sciences, 295–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_44.

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Perraud, S., C. David e Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces". In Solid State Phenomena, 835–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.835.

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Ossau, W., T. L. Kuhn, E. Bangert e G. Weimann. "The H-Band Luminescence of p-Type GaAs-(GaAl)As Heterostructures in High Magnetic Fields". In High Magnetic Fields in Semiconductor Physics II, 268–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_41.

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Reményi, G., G. Landwehr, W. Heuring, G. Weimann e W. Schlapp. "Fractional Quantum Hall Effect of p-Type GaAs-(GaAl)As Heterostructures in the Millikelvin Range". In Springer Series in Solid-State Sciences, 166–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_25.

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Iwasa, Y., N. Miura, S. Takeyama e T. Ando. "Hole Cyclotron Resonance in p-Type GaAs-AlGaAs Superlattices in High Magnetic Fields". In Springer Series in Solid-State Sciences, 274–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_40.

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Lohner, A., M. Woerner, T. Elsaesser e W. Kaiser. "Hot Hole Capture by Shallow Acceptors in p-Type GaAs Studied by Picosecond Infrared Spectroscopy". In Ultrafast Phenomena VIII, 416–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84910-7_131.

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Ono, M., N. Nishioka, M. Morifuji e C. Hamaguchi. "Temperature Dependence of Resonant Tunneling Characteristics in a p-type GaAs/AlAs Double-Barrier Structure". In Springer Proceedings in Physics, 835–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_396.

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Szmulowicz, Frank, Gail J. Brown, William C. Mitchel, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski e C. H. Lin. "Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices". In Intersubband Transitions in Quantum Wells: Physics and Devices, 76–83. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_11.

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Mal, Indranil, Asish Hazra, D. P. Samajdar e T. D. Das. "Investigation of Electronic and Optical Properties of GaSbBi/GaAs Type-II Quantum Wells Using 14-Band k · p Hamiltonian". In Springer Proceedings in Physics, 1013–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_155.

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Atti di convegni sul tema "P-type GaAs"

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Barnes, Peter A., Joongseo Park e John B. Crofton. "Nonalloyed contacts to p-type GaAs". In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, a cura di R. Aaron Falk. SPIE, 1993. http://dx.doi.org/10.1117/12.146540.

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Szmulowicz, Frank, e Gail J. Brown. "Whither P-type GaAs/AlGaAs QWIP?" In Symposium on Integrated Optoelectronic Devices, a cura di Gail J. Brown e Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467659.

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Cifuentes, N., H. Limborco, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira, M. I. N. da Silva, J. C. Gonzalez, Daniel B. Roa, Emilson R. Viana e A. Abelenda. "Electronic transport in p-type doped GaAs nanowires". In 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2016. http://dx.doi.org/10.1109/sbmicro.2016.7731333.

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Xu, Zhiwei, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella e H. Alan Schwettman. "Second harmonic generation in p-type GaAs quantum wells". In OE/LASE '94, a cura di Gottfried H. Doehler e Emil S. Koteles. SPIE, 1994. http://dx.doi.org/10.1117/12.175709.

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Majid, A. "Deep levels in Ruthenium doped p-type MOCVD GaAs". In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994034.

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Missaoui, A., L. Beji e A. Bouazizi. "Optical Study of Porous p-type GaAs by Spectroscopic Ellipsometry". In 2nd International Conference on Transparent Optical Networks "Mediterranean Winter" 2008. ICTON-MW'08. IEEE, 2008. http://dx.doi.org/10.1109/ictonmw.2008.4773114.

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Boland, Jessica L., A. Casadei, G. Tutuncouglu, F. Matteini, C. Davies, F. Gaveen, F. Amaduzzi et al. "Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping". In 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2016. http://dx.doi.org/10.1109/irmmw-thz.2016.7758574.

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Cho, Taehee, Hyungsuk Kim, Songcheol Hong e Youngse Kwon. "Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector". In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pd-5-6.

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BOGDANOV, E. V., A. A. ILIEVSKY, N. YA. MININA, A. M. SAVIN, O. P. HANSEN, C. B. SORENSEN e W. KRAAK. "NEGATIVE AND PERSISTENT POSITIVE PHOTOCONDUCTIVITY IN P-TYPE Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As". In Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0019.

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Grbić, B., R. Leturcq, T. Ihn, K. Ensslin, D. Reuter e A. D. Wieck. "Hole transport in p-type GaAs quantum dots and point contacts". In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730121.

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Rapporti di organizzazioni sul tema "P-type GaAs"

1

McCormick, Larry D. Scanning Tunneling Microscopy Etching of Micrometer Level Features on P-Type GaAs. Fort Belvoir, VA: Defense Technical Information Center, marzo 1989. http://dx.doi.org/10.21236/ada209216.

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2

Tracy, Lisa A., John L. Reno e Terry W. Hargett. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures. Office of Scientific and Technical Information (OSTI), settembre 2015. http://dx.doi.org/10.2172/1221866.

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3

Chu, Jerome T., e Sheng S. Li. Investigation of Normal Incidence High Performance P-Type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, giugno 1997. http://dx.doi.org/10.21236/ada325634.

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4

Dutra, Lauren M., James Nonnemaker, Nathaniel Taylor, Ashley Feld, Brian Bradfield, John Holloway, Edward (Chip) Hill e Annice Kim. Visual Attention to Tobacco-Related Stimuli in a 3D Virtual Store. RTI Press, maggio 2020. http://dx.doi.org/10.3768/rtipress.2020.rr.0036.2005.

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Abstract (sommario):
We used eye tracking to measure visual attention to tobacco products and pro- and anti-tobacco advertisements (pro-ads and anti-ads) during a shopping task in a three-dimensional virtual convenience store. We used eye-tracking hardware to track the percentage of fixations (number of times the eye was essentially stationary; F) and dwell time (time spent looking at an object; DT) for several categories of objects and ads for 30 adult current cigarette smokers. We used Wald F-tests to compare fixations and dwell time across categories, adjusting comparisons of ads by the number of each type of ad. Overall, unadjusted for the number of each object, participants focused significantly greater attention on snacks and drinks and tobacco products than ads (all P<0.005). Adjusting for the number of each type of ad viewed, participants devoted significantly greater visual attention to pro-ads than anti-ads or ads unrelated to tobacco (P<0.001). Visual attention for anti-ads was significantly greater when the ads were placed on the store’s external walls or hung from the ceiling than when placed on the gas pump or floor (P<0.005). In a cluttered convenience store environment, anti-ads at the point of sale have to compete with many other stimuli. Restrictions on tobacco product displays and advertisements at the point of sale could reduce the stimuli that attract smokers’ attention away from anti-ads.
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5

Awschalom, M., e R. K. T. Haken. Dependence of charge collection distributions and dose on the gas type filling the ionization chamber for a p(66)Be(49) clinical neutron beam. Office of Scientific and Technical Information (OSTI), gennaio 1985. http://dx.doi.org/10.2172/5345986.

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6

Awschalom, Miguel, e R. Ten Haken. Dependence of Charge Collection Distributions and Dose of the Gas Type Filling the Ionization Chamber for a p(66)-Be(49) Clinical Neutron Beam. Office of Scientific and Technical Information (OSTI), gennaio 1985. http://dx.doi.org/10.2172/1156255.

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