Articoli di riviste sul tema "Mott materials"
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Kiffner, Martin, Jonathan Coulthard, Frank Schlawin, Arzhang Ardavan e Dieter Jaksch. "Mott polaritons in cavity-coupled quantum materials". New Journal of Physics 21, n. 7 (31 luglio 2019): 073066. http://dx.doi.org/10.1088/1367-2630/ab31c7.
Testo completoFurukawa, Tetsuya, Kazuya Miyagawa, Hiromi Taniguchi, Reizo Kato e Kazushi Kanoda. "Quantum criticality of Mott transition in organic materials". Nature Physics 11, n. 3 (9 febbraio 2015): 221–24. http://dx.doi.org/10.1038/nphys3235.
Testo completoFeng, Dong-Lai. "Mott physics — one of main themes in quantum materials". Acta Physica Sinica 72, n. 23 (2023): 237101. http://dx.doi.org/10.7498/aps.72.20231508.
Testo completoWang, Yue, Kyung-Mun Kang, Minjae Kim, Hong-Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang e Hyung-Ho Park. "Mott-transition-based RRAM". Materials Today 28 (settembre 2019): 63–80. http://dx.doi.org/10.1016/j.mattod.2019.06.006.
Testo completoInoue, Isao H., e Marcelo J. Rozenberg. "Taming the Mott Transition for a Novel Mott Transistor". Advanced Functional Materials 18, n. 16 (22 agosto 2008): 2289–92. http://dx.doi.org/10.1002/adfm.200800558.
Testo completoGavrichkov, Vladimir A. "A simple metal–insulator criterion for the doped Mott–Hubbard materials". Solid State Communications 208 (aprile 2015): 11–14. http://dx.doi.org/10.1016/j.ssc.2015.02.014.
Testo completoTan, Yuting, Vladimir Dobrosavljević e Louk Rademaker. "How to Recognize the Universal Aspects of Mott Criticality?" Crystals 12, n. 7 (30 giugno 2022): 932. http://dx.doi.org/10.3390/cryst12070932.
Testo completoBrandow, Baird. "The physics of Mott electron localization". Journal of Alloys and Compounds 181, n. 1-2 (aprile 1992): 377–96. http://dx.doi.org/10.1016/0925-8388(92)90334-6.
Testo completoLaGasse, Samuel W., Prathamesh Dhakras, Kenji Watanabe, Takashi Taniguchi e Ji Ung Lee. "Schottky-Mott Limit: Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit (Adv. Mater. 24/2019)". Advanced Materials 31, n. 24 (giugno 2019): 1970169. http://dx.doi.org/10.1002/adma.201970169.
Testo completoH�fner, S. "Mott insulation in transition metal compounds". Zeitschrift f�r Physik B Condensed Matter 61, n. 2 (giugno 1985): 135–38. http://dx.doi.org/10.1007/bf01307767.
Testo completoCuono, Giuseppe, e Carmine Autieri. "Mott Insulator Ca2RuO4 under External Electric Field". Materials 15, n. 19 (26 settembre 2022): 6657. http://dx.doi.org/10.3390/ma15196657.
Testo completoPorai-Koshits, E. A. "Recipient of the 1988 Mott Award". Journal of Non-Crystalline Solids 111, n. 1 (settembre 1989): v. http://dx.doi.org/10.1016/0022-3093(89)90413-4.
Testo completoEric Spear, Walter, e Robert A. Weeks. "Recipient of the 1989 Mott award". Journal of Non-Crystalline Solids 124, n. 2-3 (ottobre 1990): i. http://dx.doi.org/10.1016/0022-3093(90)90250-p.
Testo completoLashley, J. C., K. Gofryk, B. Mihaila, J. L. Smith e E. K. H. Salje. "Thermal avalanches near a Mott transition". Journal of Physics: Condensed Matter 26, n. 3 (18 dicembre 2013): 035701. http://dx.doi.org/10.1088/0953-8984/26/3/035701.
Testo completoHuda, Muhammad N., Mowafak M. Al-Jassim e John A. Turner. "Mott insulators: An early selection criterion for materials for photoelectrochemical H2 production". Journal of Renewable and Sustainable Energy 3, n. 5 (settembre 2011): 053101. http://dx.doi.org/10.1063/1.3637367.
Testo completoPesin, Dmytro, e Leon Balents. "Mott physics and band topology in materials with strong spin–orbit interaction". Nature Physics 6, n. 5 (21 marzo 2010): 376–81. http://dx.doi.org/10.1038/nphys1606.
Testo completoScheiderer, Philipp, Matthias Schmitt, Judith Gabel, Michael Zapf, Martin Stübinger, Philipp Schütz, Lenart Dudy et al. "Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator". Advanced Materials 30, n. 25 (7 maggio 2018): 1706708. http://dx.doi.org/10.1002/adma.201706708.
Testo completoPollak, Michael. "Electrons in Anderson–Mott insulators". European Physical Journal Special Topics 227, n. 15-16 (28 gennaio 2019): 2221–40. http://dx.doi.org/10.1140/epjst/e2018-800055-9.
Testo completoNichols, Matthew A., Lawrence W. Cheuk, Melih Okan, Thomas R. Hartke, Enrique Mendez, T. Senthil, Ehsan Khatami, Hao Zhang e Martin W. Zwierlein. "Spin transport in a Mott insulator of ultracold fermions". Science 363, n. 6425 (6 dicembre 2018): 383–87. http://dx.doi.org/10.1126/science.aat4387.
Testo completoRajbhandari, A., K. Manandhar e R. R. Pradhananga. "Mott-Schottky Analysis of Laboratory Prepared Ag2S-AgI Membrane Electrode". Journal of Nepal Chemical Society 28 (23 maggio 2013): 89–93. http://dx.doi.org/10.3126/jncs.v28i0.8113.
Testo completoZheng, Ming, e Pengfei Guan. "Coupled straintronic–optoelectronic effect in Mott oxide films". Nanoscale 14, n. 14 (2022): 5545–50. http://dx.doi.org/10.1039/d2nr01099b.
Testo completoMarianetti, C. A., G. Kotliar e G. Ceder. "A first-order Mott transition in LixCoO2". Nature Materials 3, n. 9 (22 agosto 2004): 627–31. http://dx.doi.org/10.1038/nmat1178.
Testo completoManuel, L. O., C. J. Gazza, A. E. Feiguin e A. E. Trumper. "The spectral function for Mott insulating surfaces". Journal of Physics: Condensed Matter 15, n. 17 (22 aprile 2003): 2435–40. http://dx.doi.org/10.1088/0953-8984/15/17/301.
Testo completoCasado, J. M., J. H. Harding e G. J. Hyland. "Small-polaron hopping in Mott-insulating UO2". Journal of Physics: Condensed Matter 6, n. 25 (20 giugno 1994): 4685–98. http://dx.doi.org/10.1088/0953-8984/6/25/007.
Testo completoStefanovich, G., A. Pergament e D. Stefanovich. "Electrical switching and Mott transition in VO2". Journal of Physics: Condensed Matter 12, n. 41 (26 settembre 2000): 8837–45. http://dx.doi.org/10.1088/0953-8984/12/41/310.
Testo completoLogan, David E., Martin R. Galpin e Jonathan Mannouch. "Mott transitions in the periodic Anderson model". Journal of Physics: Condensed Matter 28, n. 45 (12 settembre 2016): 455601. http://dx.doi.org/10.1088/0953-8984/28/45/455601.
Testo completoLogan, David E., e Martin R. Galpin. "Mott insulators and the doping-induced Mott transition within DMFT: exact results for the one-band Hubbard model". Journal of Physics: Condensed Matter 28, n. 2 (11 dicembre 2015): 025601. http://dx.doi.org/10.1088/0953-8984/28/2/025601.
Testo completoCiorciaro, L., T. Smoleński, I. Morera, N. Kiper, S. Hiestand, M. Kroner, Y. Zhang et al. "Kinetic magnetism in triangular moiré materials". Nature 623, n. 7987 (15 novembre 2023): 509–13. http://dx.doi.org/10.1038/s41586-023-06633-0.
Testo completoBelitz, D., e T. R. Kirkpatrick. "Order parameter description of the Anderson-Mott transition". Zeitschrift f�r Physik B Condensed Matter 98, n. 4 (dicembre 1995): 513–26. http://dx.doi.org/10.1007/bf01320853.
Testo completoBrazovskii, S., P. Monceau e F. Nad. "The ferroelectric Mott-Hubbard phase in organic conductors". Synthetic Metals 137, n. 1-3 (aprile 2003): 1331–33. http://dx.doi.org/10.1016/s0379-6779(02)01076-7.
Testo completoKawasugi, Yoshitaka, Kazuhiro Seki, Satoshi Tajima, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto e Reizo Kato. "Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device". Science Advances 5, n. 5 (maggio 2019): eaav7282. http://dx.doi.org/10.1126/sciadv.aav7282.
Testo completoIoffe, L. B., e A. J. Millis. "D-wave superconductivity in doped Mott insulators". Journal of Physics and Chemistry of Solids 63, n. 12 (dicembre 2002): 2259–68. http://dx.doi.org/10.1016/s0022-3697(02)00254-8.
Testo completoGrzybowski, Przemysław R., e Ravindra W. Chhajlany. "Hubbard-I approach to the Mott transition". physica status solidi (b) 249, n. 11 (6 agosto 2012): 2231–38. http://dx.doi.org/10.1002/pssb.201248194.
Testo completoHansmann, P., A. Toschi, G. Sangiovanni, T. Saha-Dasgupta, S. Lupi, M. Marsi e K. Held. "Mott-Hubbard transition in V2 O3 revisited". physica status solidi (b) 250, n. 7 (20 marzo 2013): 1251–64. http://dx.doi.org/10.1002/pssb.201248476.
Testo completoBaskaran, Ganapathy. "Impurity band Mott insulators: a new route to highTcsuperconductivity". Science and Technology of Advanced Materials 9, n. 4 (dicembre 2008): 044104. http://dx.doi.org/10.1088/1468-6996/9/4/044104.
Testo completoMartelo, L. M., M. Dzierzawa, L. Siffert e D. Baeriswyl. "Mott-Hubbard transition and antiferromagnetism on the honeycomb lattice". Zeitschrift für Physik B Condensed Matter 103, n. 2 (giugno 1996): 335–38. http://dx.doi.org/10.1007/s002570050384.
Testo completoPustogow, A., M. Bories, A. Löhle, R. Rösslhuber, E. Zhukova, B. Gorshunov, S. Tomić et al. "Quantum spin liquids unveil the genuine Mott state". Nature Materials 17, n. 9 (6 agosto 2018): 773–77. http://dx.doi.org/10.1038/s41563-018-0140-3.
Testo completoSipos, B., A. F. Kusmartseva, A. Akrap, H. Berger, L. Forró e E. Tutiš. "From Mott state to superconductivity in 1T-TaS2". Nature Materials 7, n. 12 (9 novembre 2008): 960–65. http://dx.doi.org/10.1038/nmat2318.
Testo completoNAYAK, CHETAN, e FRANK WILCZEK. "POSSIBLE ELECTRONIC STRUCTURE OF DOMAIN WALLS IN MOTT INSULATORS". International Journal of Modern Physics B 10, n. 17 (30 luglio 1996): 2125–36. http://dx.doi.org/10.1142/s0217979296000970.
Testo completoCraco, L., M. S. Laad e E. Müller-Hartmann. "Metallizing the Mott insulator TiOCl by electron doping". Journal of Physics: Condensed Matter 18, n. 48 (17 novembre 2006): 10943–53. http://dx.doi.org/10.1088/0953-8984/18/48/021.
Testo completoSaket, Abhinav, e Rajarshi Tiwari. "Orbital Mott transition in two dimensional pyrochlore lattice". Journal of Physics: Condensed Matter 32, n. 25 (30 marzo 2020): 255601. http://dx.doi.org/10.1088/1361-648x/ab7a4b.
Testo completoSuzuki, Yuta, Seiji Shibasaki, Yoshihiro Kubozono e Takashi Kambe. "Antiferromagnetic resonance in the Mott insulator fcc-Cs3C60". Journal of Physics: Condensed Matter 25, n. 36 (8 agosto 2013): 366001. http://dx.doi.org/10.1088/0953-8984/25/36/366001.
Testo completoJanotti, A., L. Bjaalie, B. Himmetoglu e C. G. Van de Walle. "Band alignment at band-insulator/Mott-insulator interfaces". physica status solidi (RRL) - Rapid Research Letters 8, n. 6 (14 maggio 2014): 577–82. http://dx.doi.org/10.1002/pssr.201409088.
Testo completoMitra, Sanchali, e Santanu Mahapatra. "Schottky–Mott limit in graphene inserted 2D semiconductor–metal interfaces". Journal of Applied Physics 132, n. 14 (14 ottobre 2022): 145301. http://dx.doi.org/10.1063/5.0106620.
Testo completoGrimes, Robin W., e C. Richard A. Catlow. "Modeling Localized Defects in Ionic Materials Using Mott-Littleton and Embedded Quantum Cluster Methodology". Journal of the American Ceramic Society 73, n. 11 (novembre 1990): 3251–56. http://dx.doi.org/10.1111/j.1151-2916.1990.tb06446.x.
Testo completoHo, Chang-Ming, V. N. Muthukumar, Masao Ogata e P. W. Anderson. "Nature of Spin Excitations in Two-Dimensional Mott Insulators: Undoped Cuprates and Other Materials". Physical Review Letters 86, n. 8 (19 febbraio 2001): 1626–29. http://dx.doi.org/10.1103/physrevlett.86.1626.
Testo completoShore, K. Alan. "Electronic Processes in Non-crystalline Materials (Second Edition), by N.F. Mott and E.A. Davis". Contemporary Physics 55, n. 4 (25 giugno 2014): 337. http://dx.doi.org/10.1080/00107514.2014.933254.
Testo completoNagaosa, N., T. K. Lee, C. M. Ho, T. Tohyama e S. Maekawa. "Theory of slightly doped Mott insulator". Physica C: Superconductivity 388-389 (maggio 2003): 15–18. http://dx.doi.org/10.1016/s0921-4534(02)02604-7.
Testo completoKohno, Masanori, Xiao Hu e Masashi Tachiki. "Charge dynamics in doped Mott insulators". Physica C: Superconductivity 412-414 (ottobre 2004): 82–85. http://dx.doi.org/10.1016/j.physc.2003.11.077.
Testo completovan Loon, Erik G. C. P., Malte Schüler, Daniel Springer, Giorgio Sangiovanni, Jan M. Tomczak e Tim O. Wehling. "Coulomb engineering of two-dimensional Mott materials". npj 2D Materials and Applications 7, n. 1 (6 luglio 2023). http://dx.doi.org/10.1038/s41699-023-00408-x.
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