Articoli di riviste sul tema "MIS devices"
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Hawasli, Ammar H., Jawad M. Khalifeh, Ajay Chatrath, Chester K. Yarbrough e Wilson Z. Ray. "Minimally invasive transforaminal lumbar interbody fusion with expandable versus static interbody devices: radiographic assessment of sagittal segmental and pelvic parameters". Neurosurgical Focus 43, n. 2 (agosto 2017): E10. http://dx.doi.org/10.3171/2017.5.focus17197.
Testo completoAl-Begg, S. M., S. H. Saeed e A. S. Al-Rawas. "Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs". Journal of Ovonic Research 19, n. 4 (luglio 2023): 359–67. http://dx.doi.org/10.15251/jor.2023.194.359.
Testo completoZhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan et al. "Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric". Electronics 11, n. 6 (13 marzo 2022): 895. http://dx.doi.org/10.3390/electronics11060895.
Testo completoEngstrom, O., e A. Carlsson-Gylemo. "MIS Devices for optical information processing". IEEE Transactions on Electron Devices 32, n. 11 (novembre 1985): 2438–40. http://dx.doi.org/10.1109/t-ed.1985.22292.
Testo completoMoriwaki, M. M., J. R. Srour, L. F. Lou e J. R. Waterman. "Ionizing radiation effects on HgCdTe MIS devices". IEEE Transactions on Nuclear Science 37, n. 6 (1990): 2034–41. http://dx.doi.org/10.1109/23.101226.
Testo completoTardy, J., I. Thomas, P. Viktorovitch, M. Gendry, J. L. Perrossier, C. Santinelli, M. P. Besland, P. Louis e G. Post. "Long-term stability of InP MIS devices". Applied Surface Science 50, n. 1-4 (giugno 1991): 383–89. http://dx.doi.org/10.1016/0169-4332(91)90203-v.
Testo completoHynecek, Jaroslav. "4455739 Process protection for individual device gates on large area MIS devices". Microelectronics Reliability 25, n. 1 (gennaio 1985): 204. http://dx.doi.org/10.1016/0026-2714(85)90469-x.
Testo completoPreuveneers, D., e Y. Berbers. "Encoding Semantic Awareness in Resource-Constrained Devices". IEEE Intelligent Systems 23, n. 2 (marzo 2008): 26–33. http://dx.doi.org/10.1109/mis.2008.25.
Testo completoRagusa, Edoardo, Christian Gianoglio, Rodolfo Zunino e Paolo Gastaldo. "Image Polarity Detection on Resource-Constrained Devices". IEEE Intelligent Systems 35, n. 6 (1 novembre 2020): 50–57. http://dx.doi.org/10.1109/mis.2020.3011586.
Testo completoHsu, Che-Ching, Pei-Chien Shen, Yi-Nan Zhong e Yue-Ming Hsin. "AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer". MRS Advances 3, n. 3 (28 dicembre 2017): 143–46. http://dx.doi.org/10.1557/adv.2017.626.
Testo completoAlhalafi, Z. H., e Shashi Paul. "Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture". Advances in Science and Technology 95 (ottobre 2014): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ast.95.107.
Testo completoMabrook, Mohammed Fadhil, Daniel Kolb, Christopher Pearson, D. A. Zeze e M. C. Petty. "Fabrication and Characterisation of MIS Organic Memory Devices". Advances in Science and Technology 54 (settembre 2008): 474–79. http://dx.doi.org/10.4028/www.scientific.net/ast.54.474.
Testo completoZayats, Galina. "Modeling of Radiation Effects in the MIS Devices". American Journal of Nano Research and Applications 5, n. 1 (2017): 7. http://dx.doi.org/10.11648/j.nano.20170501.12.
Testo completoMoriwaki, M. M., J. R. Srour e R. L. Strong. "Charge transport and trapping in HgCdTe MIS devices". IEEE Transactions on Nuclear Science 39, n. 6 (1992): 2265–72. http://dx.doi.org/10.1109/23.211432.
Testo completoYoo, Jae-Hoon, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm e Hee-Chul Lee. "Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices". Nanomaterials 13, n. 11 (1 giugno 2023): 1785. http://dx.doi.org/10.3390/nano13111785.
Testo completoLee, Chwan Ying, Yung Hsiang Chen, Lurng Shehng Lee, Chien Chung Hung, Cheng Tyng Yen, Suh Fang Lin, Rong Xuan, Wei Hung Kuo, Tzu Kun Ku e Ming Jinn Tsai. "Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues". Materials Science Forum 717-720 (maggio 2012): 1303–6. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1303.
Testo completoSpirrov, Dimitar, Eugen Kludt, Eline Verschueren, Andreas Büchner e Tom Francart. "Effect of (Mis)Matched Compression Speed on Speech Recognition in Bimodal Listeners". Trends in Hearing 24 (gennaio 2020): 233121652094897. http://dx.doi.org/10.1177/2331216520948974.
Testo completoChakraborty, B. R., Nita Dilawar, S. Pal e D. N. Bose. "SIMS characterization of GaAs MIS devices at the interface". Thin Solid Films 411, n. 2 (maggio 2002): 240–46. http://dx.doi.org/10.1016/s0040-6090(02)00277-8.
Testo completoHordequin, C., A. Brambilla, P. Bergonzo e F. Foulon. "Nuclear radiation detectors using thick amorphous-silicon MIS devices". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 456, n. 3 (gennaio 2001): 284–89. http://dx.doi.org/10.1016/s0168-9002(00)00575-1.
Testo completoKim, Seong-Il, Ho-Kyun Ahn, Jong-Won Lim e Kijun Lee. "GaN MIS-HEMT PA MMICs for 5G Mobile Devices". Journal of the Korean Physical Society 74, n. 2 (gennaio 2019): 196–200. http://dx.doi.org/10.3938/jkps.74.196.
Testo completoAndreev, D. V., G. G. Bondarenko, V. V. Andreev, V. M. Maslovsky e A. A. Stolyarov. "Modification of MIS Devices by Radio-Frequency Plasma Treatment". Acta Physica Polonica A 136, n. 2 (agosto 2019): 263–66. http://dx.doi.org/10.12693/aphyspola.136.263.
Testo completoRuff, Katherine. "How impact measurement devices act: the performativity of theory of change, SROI and dashboards". Qualitative Research in Accounting & Management 18, n. 3 (22 gennaio 2021): 332–60. http://dx.doi.org/10.1108/qram-02-2019-0041.
Testo completoYo-Ping Huang e Tienwei Tsai. "A Fuzzy Semantic Approach to Retrieving Bird Information Using Handheld Devices". IEEE Intelligent Systems 20, n. 1 (gennaio 2005): 16–23. http://dx.doi.org/10.1109/mis.2005.1.
Testo completoHerrero, Jose Luis, Jesus Lozano, Jose Pedro Santos, J. Alvaro Fernandez e Jose Ignacio Suarez Marcelo. "A Web-Based Approach for Classifying Environmental Pollutants Using Portable E-nose Devices". IEEE Intelligent Systems 31, n. 3 (maggio 2016): 108–12. http://dx.doi.org/10.1109/mis.2016.48.
Testo completoDoghish, M. Y., e F. D. Ho. "A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices". IEEE Transactions on Electron Devices 39, n. 12 (1992): 2771–80. http://dx.doi.org/10.1109/16.168723.
Testo completoBenamara, Z., e B. Gruzza. "Preparation and characterization of germanium substrates for MIS electronic devices". Vacuum 46, n. 5-6 (maggio 1995): 477–80. http://dx.doi.org/10.1016/0042-207x(94)00110-3.
Testo completoPerina, Welder, Joao Martino e Paula Agopian. "(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region". ECS Meeting Abstracts MA2023-01, n. 33 (28 agosto 2023): 1873. http://dx.doi.org/10.1149/ma2023-01331873mtgabs.
Testo completoŤapajna, Milan. "Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications". Crystals 10, n. 12 (18 dicembre 2020): 1153. http://dx.doi.org/10.3390/cryst10121153.
Testo completoВойцеховский, А. В., С. Н. Несмелов, С. М. Дзядух, С. А. Дворецкий, Н. Н. Михайлов, Г. Ю. Сидоров e М. В. Якушев. "Aдмиттанс МДП-структур на основе nBn-систем из эпитаксиального HgCdTe, разработанных для детектирования в спектральном диапазоне 3-5 μm". Письма в журнал технической физики 47, n. 12 (2021): 34. http://dx.doi.org/10.21883/pjtf.2021.12.51065.18760.
Testo completoNoborio, Masato, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda e Tsunenobu Kimoto. "Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices". Materials Science Forum 645-648 (aprile 2010): 825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.825.
Testo completoVispute, R. D., A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva e K. A. Jones. "Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 591–97. http://dx.doi.org/10.1557/s1092578300004804.
Testo completoSaranti, Konstantina, e Shashi Paul. "Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium". Advances in Science and Technology 95 (ottobre 2014): 78–83. http://dx.doi.org/10.4028/www.scientific.net/ast.95.78.
Testo completoKhosa, R. Y., J. T. Chen, M. Winters, K. Pálsson, R. Karhu, J. Hassan, N. Rorsman e E. Ö. Sveinbjӧrnsson. "Electrical characterization of high k-dielectrics for 4H-SiC MIS devices". Materials Science in Semiconductor Processing 98 (agosto 2019): 55–58. http://dx.doi.org/10.1016/j.mssp.2019.03.025.
Testo completoRouag, N., Z. Ouennoughi, M. Rommel, K. Murakami e L. Frey. "Current conduction mechanism of MIS devices using multidimensional minimization system program". Microelectronics Reliability 55, n. 7 (giugno 2015): 1028–34. http://dx.doi.org/10.1016/j.microrel.2015.05.001.
Testo completoMohanbabu, A., R. Saravana Kumar e N. Mohankumar. "Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices". Superlattices and Microstructures 112 (dicembre 2017): 604–18. http://dx.doi.org/10.1016/j.spmi.2017.10.020.
Testo completoLichtenwalner, Daniel J., Jesse Jur, Naoya Inoue e Angus Kingon. "High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices". ECS Transactions 1, n. 5 (21 dicembre 2019): 227–38. http://dx.doi.org/10.1149/1.2209272.
Testo completoXia, Yongwei, Georges Pananakakis e Georges Kamarinos. "Numerical simulation of the current-voltage characteristics of MIS tunnel devices". Journal of Computational Physics 91, n. 2 (dicembre 1990): 478–85. http://dx.doi.org/10.1016/0021-9991(90)90049-7.
Testo completoEvans, N. J., G. G. Roberts e M. C. Petty. "Effects of hydrogen gas on palladium/LB film/silicon MIS devices". Sensors and Actuators 16, n. 3 (marzo 1989): 255–61. http://dx.doi.org/10.1016/0250-6874(89)87007-6.
Testo completoCheng, Wei-Chih, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang e Hongyu Yu. "Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications". Journal of Vacuum Science & Technology B 40, n. 2 (marzo 2022): 022212. http://dx.doi.org/10.1116/6.0001654.
Testo completoLin, Shawn R., e Kevin M. Miller. "Lessons Learned from Implantation of Morcher 50D and 96S Artificial Iris Diaphragms". Case Reports in Ophthalmology 8, n. 3 (23 novembre 2017): 527–34. http://dx.doi.org/10.1159/000484128.
Testo completoYoon, Young Jun, Jae Sang Lee, Jae Kwon Suk, In Man Kang, Jung Hee Lee, Eun Je Lee e Dong Seok Kim. "Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment". Micromachines 12, n. 8 (23 luglio 2021): 864. http://dx.doi.org/10.3390/mi12080864.
Testo completoHosoi, Takuji, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura e Heiji Watanabe. "Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices". Materials Science Forum 679-680 (marzo 2011): 496–99. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.496.
Testo completoCalzolaro, Anthony, Thomas Mikolajick e Andre Wachowiak. "Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices". Materials 15, n. 3 (21 gennaio 2022): 791. http://dx.doi.org/10.3390/ma15030791.
Testo completoTyan, Shing-Long, Hsiang-Chi Tang, Zhang-Wei Wu e Ting-Shan Mo. "Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications". Modern Physics Letters B 33, n. 34 (10 dicembre 2019): 1950423. http://dx.doi.org/10.1142/s0217984919504232.
Testo completoFerguson, P. P., S. Gauvin e N. Beaudoin. "On the importance of the MIS junction to the photovoltaic properties of ITO/TPD/Alq3/Al electroluminescent devices". Canadian Journal of Physics 91, n. 1 (gennaio 2013): 60–63. http://dx.doi.org/10.1139/cjp-2012-0113.
Testo completoKeymel, Stefanie. "COVID-19: Wann muss ich an MIS-A denken?" Kompass Pneumologie 10, n. 1 (30 novembre 2021): 15–16. http://dx.doi.org/10.1159/000521061.
Testo completoAddepalli, Suresh. "Annealing temperature influenced physical properties of Al2TiO5 thin films for MIS devices". Advanced Materials Proceedings 2, n. 3 (1 marzo 2017): 189–93. http://dx.doi.org/10.5185/amp.2017/3011.
Testo completoVoitsekhovskii, A. V., e et al. "Impedance of MIS devices based on nBn structures from mercury cadmium telluride". Izvestiya vysshikh uchebnykh zavedenii. Fizika 63, n. 6 (1 giugno 2020): 8–15. http://dx.doi.org/10.17223/00213411/63/6/8.
Testo completoAndreev, D. V., G. G. Bondarenko, V. V. Andreev, V. M. Maslovsky e A. A. Stolyarov. "Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments". Acta Physica Polonica A 132, n. 2 (agosto 2017): 245–48. http://dx.doi.org/10.12693/aphyspola.132.245.
Testo completoVuillaume, D., P. Fontaine, J. Collet, D. Deresmes, M. Garet e F. Rondelez. "Alkyl-trichlorosilane monolayer as ultra-thin insulating film for silicon MIS devices". Microelectronic Engineering 22, n. 1-4 (agosto 1993): 101–4. http://dx.doi.org/10.1016/0167-9317(93)90140-z.
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