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Tesi sul tema "Millimeter wave design"
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1
Kotronis, Anastasios K. "Millimeter-wave filter design with Suspended Stripline". Thesis, Monterey, California. Naval Postgraduate School, 1989. http://hdl.handle.net/10945/26073.
Testo completo
2
Luy, Ulku. "Millimeter Wave Gunn Diode Oscillators". Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/2/12608759/index.pdf.
Testo completoAbstract (sommario):
This thesis presents the design and implementation of a millimeter-wave Gunn
diode oscillator operating at 35 GHz (Ka (R) 26.5-40 GHz Band). The aim of the
study is to produce a high frequency, high power signal from a negative resistance
device situated in a waveguide cavity by applying a direct current bias. First the
physics of Gunn diodes is studied and the requirements that Gunn diode operates
within the negative differential resistance region is obtained. Then the best design
configuration is selected. The design of the oscillator includes the design of the
waveguide housing, diode mounting and the bias insertion network. Some
simulation tools are used to predict, approximately, the behaviour of the oscillator
and the bias coupling circuit. For tuning purposes, a sliding backshort and a triplescrew-
tuner system is used. For different bias values and different positions of the
tuning elements oscillations are observed. A much more stable and higher
magnitude oscillations were obtained with the inclusion of &ldquoresonant disc&rdquo
placed on top of the diode. 15 dBm power was measured at a frequency of 28 GHz. Laboratory measurements have been carried out to determine the oscillator frequency, power output and stability for different bias conditions.
3
Stein, Edwin Lee Jr. "Design and development of passive millimeter-wave imaging systems". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 123 p, 2009. http://proquest.umi.com/pqdweb?did=1885755721&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Testo completo
4
Zhang, Deyou. "Training Beam Sequence Design for Millimeter Wave Tracking Systems". Thesis, The University of Sydney, 2020. https://hdl.handle.net/2123/22479.
Testo completoAbstract (sommario):
In this thesis, the researcher considers a time-varying millimeter wave multiple-input single-output system, where several different training beam sequence designs that are suitable for different beam tracking scenarios have been proposed. In the case where the codebook-based training beams are used, the researcher firstly introduces a power-based estimator to update the stale angle-of-departure (AoD) in each beam tracking period when the beam codebook is a unitary matrix. Moreover, the power-based estimator is also extended to the case where the codewords constituting the beam codebook are not orthogonal to each other. In this scenario, to leverage the inter-beam interference and improve the beam tracking performance, the researcher modifies the power-based estimator and proposes to track the time-varying AoD via the orthogonal matching pursuit. When the codebook-based training beams with the maximum a posteriori (MAP) criterion are used to track the time-varying AoD, a closed-form upper bound for the average tracking error probability is derived and further optimized. The researcher firstly considers an AoD slow-changing scenario where narrow training beams implemented by single radio-frequency (RF) chain are employed, followed by the fast-changing scenario where multiple RF chains generating wide beams are used. As a further step to reduce the training overhead, the researcher redesigns the training beam sequence without using the beam codebook. A single-path channel model is firstly investigated, where the aforementioned MAP criterion continues to be used to track the time-varying AoD, followed by an extended Kalman filter to update the stale complex path gain, which was not considered before. The researcher then investigates the employed training beam sequence design to minimize the estimated AoD's average mean squared error. The proposed MAP criterion and its associated non-codebook based training beam sequence design are also extended to multi-path scenarios.
5
Duong, Ninh T. "Analysis and design of millimetre wave antenna array power combines /". Title page, table of contents and abstract only, 1998. http://web4.library.adelaide.edu.au/theses/09PH/09phd925.pdf.
Testo completo
6
Hwang, Timothy H. "Design, characterization, and fabrication of microwave and millimeter-wave antennas". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 85 p, 2007. http://proquest.umi.com/pqdweb?did=1280156151&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Testo completo
7
Vanhille, Kenneth J. "Design and characterization of microfabricated three-dimensional millimeter-wave components". Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3256460.
Testo completo
8
Ahmad, Ghulam. "Novel design and measurement methodologies of millimeter wave smart antennas". Thesis, University of Surrey, 2018. http://epubs.surrey.ac.uk/848759/.
Testo completoAbstract (sommario):
Next generation wireless communication systems are expected to support unprecedented extremely high data transfer rates. This objective requires wider bandwidths which are presently only available at the millimeter waves (mm-waves) spectrum (30-300 GHz). Due to stringent propagation impairments, mm-waves mainly rely on the line of sight communication links which require high gain and wide angle beamsteeering smart antennas to maintain their performance. Owing to the complexity and losses in array beamformers, the realization of a high gain wide angle electronic beamsteering antenna solution at mm-waves becomes a key challenge. This research provides a potentially competing novel high gain electronic beamsteering antenna solution for mm-waves in the form of a phase quantized smart reflectarray consisting of high performance reconfigurable unit cells. Novel contributions of this research are: (a) Analysis of mm-wave reflectarray unit cells including the effects of fringing fields, surface waves, finite metal conductivity and metal surface roughness. (b) New measurement techniques for mm-wave reflectarray unit cells to ease the alignment, orientation, and DC biasing issues. (c) Characterization of PIN diodes at 10 GHz and 60 GHz for their ON/OFF state models extraction from measurements. (d) Design of three state implicit phase shifter reflectarray unit cell at 60 GHz, reduction in its DC bias lines, and an optimization technique to improve polarization purity of a multi-state reconfigurable unit cell. (e) A fast algorithm to prepare the electromagnetic simulation model of large reflectarrays. (f) Conception and measurement based validation of phase quantized reflecarrays and their performance matrix. (g) Conception and measurement based analytical solution of low DC power consuming smart reflectarrays. The resulting solution is agile, simple to implement, do not necessarily require multiple RF chains, enables wide angle electronic beamsteering (+-78 degree), is scalable for any gain/frequency requirements, can be made foldable for smaller satellite platforms, is very reliable, and consumes low DC power. This smart reflectarray platform can implement any phase only synthesis technique for radiation pattern control including single/multiple pencil beams, contoured beams, and their scanning over wider angles. Findings of this research would potentially benefit next generation terrestrial/air/space communication systems and radars.
9
Shokri, Hossein. "Fundamentals of Medium Access Control Design for Millimeter Wave Networks". Licentiate thesis, KTH, Reglerteknik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-173231.
Testo completoAbstract (sommario):
In current wireless communication systems, demands for extremely high data rates, along with spectrum scarcity at the microwave bands, make the millimeter wave (mmWave) band very appealing to provide these extremely high data rates even for a massive number of wireless devices. MmWave communications exhibit severe attenuation, vulnerability to obstacles (called blockage), and sparse-scattering environments. Moreover, mmWave signals have small wavelengths that allow the incorporation of many antenna elements at the current size of radio chips. This leads to high directivity gains both at the transmitter and at the receiver, directional communications, and, more importantly, possible noise-limited operations as opposed to microwave networks that are mostly interference-limited. These fundamental differences between mmWave networks and legacy communication technologies challenge the classical design constraints, objectives, and available degrees of freedom. The natural consequence is the necessity of revisiting most of the medium access control (MAC) layer design principles for mmWave networks, which have so far received less attention in the literature than physical layer and propagation issues. To address this important research gap, this thesis investigates the fundamental MAC layer performance metrics, including coverage, fairness, connection robustness, collision probability, per-link throughput, area spectral efficiency, and delay. The original analysis proposed in this thesis suggests novel insights as to the solutions for many MAC layer issues such as resource allocation, interference management, random access, mobility management, and synchronization in future mmWave networks. A first thread of the thesis focuses on the fundamental performance analysis and mathematical abstraction of mmWave wireless networks to characterize their differences from conventional wireless networks, i.e., high directivity, line-of-sight communications, and occurrence of deafness (misalignment between transmitters and receivers). A mathematical framework to investigate the impact of beam training (alignment) overhead on the throughput is established, which leads to identify a new alignment-throughput tradeoff in mmWave networks. A novel blockage model that captures the angular correlation of line-of-sight conditions using a new notion of "coherence angle" is proposed. The coverage and delay of directional cell discovery are evaluated, and an optimization approach to maximize long-term throughput of users with fairness guarantees is proposed. In addition, this thesis develops a tractable approach to derive the collision probability, as a function of density of the transmitters, transmission power, density and size of the obstacles, operating beamwidth, and sensitivity of the receiver, among the main parameters. The collision probability allows deriving closed-form expressions for the per-link and network throughput of mmWave networks, and thereby identifying that, contrary to mainstream belief, these networks may exhibit a non-negligible transitional behavior of interference from a noise-limited to an interference-limited regime. The second thread of the thesis builds on the previous fundamental performance analysis and modeling to establish new, efficient MAC protocols. The derived collision probability is used to evaluate per-link throughput, area spectral efficiency, and delay performance of common MAC protocols such as TDMA and slotted ALOHA, and to provide a fundamental comparison between pros and cons of contention-free and contention-based MAC protocols. The results suggest the use of on-demand interference management strategy for future mmWave cellular networks and collision-aware hybrid MAC protocols for mmWave ad hoc networks to reliably deliver messages without sacrificing throughput and delay performance. Moreover, the transitional behavior, together with significant mismatch between transmission rates of control and data messages, imposes the development of new hybrid proactive and reactive control plane architecture. This thesis identifies the prolonged backoff time problem, which happens in mmWave networks due to blockage and deafness, and proposes a new collision notification signal to solve this problem. Motivated by the significant mismatch between coverage of the control and data planes along with delay analysis of directional cell search, a novel two-step synchronization procedure is proposed for mmWave cellular networks. Also, the impact of relaying and multi-hop communication to provide reliable mmWave connections, to alleviate frequent handovers, and to reduce the beam training overhead is investigated. The investigations of this thesis aim to demystify MAC layer performance of mmWave networks and to show the availability of many new degrees of freedom to improve the network performance, e.g., in terms of area spectral efficiency, energy efficiency, robustness, delay, coverage, and uniform quality of service provisioning. The results reveal many special behaviors of mmWave networks that are largely ignored in design approach of the current mmWave networks. Given that the standardization of mmWave wireless cellular networks has not started as yet, and that existing standards of mmWave ad hoc networks are highly sub-optimal, the results of this thesis will provide fundamental design guidelines that have the potential to be very useful for future mmWave standardizations.QC 20150907
10
Shokri-Ghadikolaei, Hossein. "Millimeter-wave Networking : Fundamental Limits, Scalable Algorithms, and Design Insights". Doctoral thesis, KTH, Nätverk och systemteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207760.
Testo completoAbstract (sommario):
The current demands for extremely high data rate wireless services and the spectrum scarcity at the sub-6 GHz bands are forcefully motivating the use of the millimeter-wave (mmWave) frequencies. The main characteristics of mmWave communications are severe attenuation, sparse-scattering environment, huge bandwidth, vulnerability to obstacles and antenna misalignment, massive beamforming, and possible noise-limited operation. These characteristics constitute a major difference with respect to legacy communication technologies, primarily designed for the sub-6 GHz bands, and are posing major theoretical design challenges that have not been sufficiently addressed so far. Motivated by these challenges, this doctoral thesis considers mmWave communications and investigates medium access control (MAC) layer design principles and performance analysis. Specifically, we focus on fundamental performance metrics, including coverage, fairness, robustness, throughput, and delay, which we address by three main research threads of increasing complexity. The first thread of the thesis analyzes the interference behavior in mmWave networks.We first propose a new index for assessing the accuracy of any interference model under any network scenario, which helps us develop a simple interference model of adequate accuracy. We then derive closed-form expressions for the throughput of mmWave ad hoc networks. The new analysis reveals that mmWave networks may exhibit a non-negligible transitional behavior from a noise-limited to an interference-limited behavior, depending on the system parameters such as density of transmitters, transmission power, and operating beamwidth. The second thread of this thesis builds on the previous one and addresses resource allocation in mmWave networks. For the short-term resource allocation, we establish a mathematical framework to investigate the impact of beam training (alignment) overhead on the network throughput. For the long-term resource allocation, we formulate a series of optimization problems that address relaying capability, frequent handovers, small multiuser interference, and load balancing. The third thread of this thesis extends the second one toward spectrum sharing in mmWave networks and characterizes the gains of beamforming and coordination in spectrum sharing via several optimization problems. We analyze these problems in the asymptotic regimes when the number of antennas becomes large and conclude that spectrum sharing with light on-demand coordination is feasible, especially at higher mmWave frequencies (for example, 73 GHz). The original analysis proposed in this thesis gives novel insights into many MAC layer issues such as resource allocation, interference management, random access, mobility management, and synchronization in future mmWave networks. The thesis also highlights that the design of mmWave networks poses open problems at the intersection of optimization and learning theories. Given the recent interest in the standardization of mmWave cellular networks and the highly sub-optimal nature of the existing standards for mmWave short-range networks, the results of this thesis may have the potential to substantially steer future standardizations.QC 20170523
11
Emrick, Rudy M. "On-chip antenna element and array design for short range millimeter-wave communications". Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1195741138.
Testo completo
12
Choi, Man Soo. "Computer-aided design models for millimeter-wave suspended-substrate microstrip line". Thesis, Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA227259.
Testo completoAbstract (sommario):
Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, March 1990.Thesis Advisor(s): Atwater, H.A. Second Reader: Lee, H. M. "March 1990." Description based on signature page as viewed on August 26, 2009. DTIC Descriptor(s): Strip Transmission Lines, Computer Aided Design, Computerized Simulation, Parameters, Microwave Equipment, Radar, Full Wave Rectifiers, Transmittance, Resonant Frequency, Construction, Wave Propagation, Coefficients, Boundary Value Problems, Resonators, Circuits, Discontinuities, Ka Band, Models, Scattering, Equivalent Circuits, Frequency. Author(s) subject terms: Millimeter wave, suspended substrate, design model. Includes bibliographical references (p. 78-79). Also available online.
13
Zhang, Qianqian. "Machine Learning for Millimeter Wave Wireless Systems: Network Design and Optimization". Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103893.
Testo completoAbstract (sommario):
Next-generation cellular systems will rely on millimeter wave (mmWave) bands to meet the increasing demand for wireless connectivity from end user equipment. Given large available bandwidth and small-sized antenna elements, mmWave frequencies can support high communication rates and facilitate the use of multiple-input-multiple-output (MIMO) techniques to increase the wireless capacity. However, the small wavelength of mmWave yields severe path loss and high channel uncertainty. Meanwhile, using a large number of antenna elements requires a high energy consumption and heavy communication overhead for MIMO transmissions and channel measurement. To facilitate efficient mmWave communications, in this dissertation, the challenges of energy efficiency and communication overhead are addressed. First, the use of unmanned aerial vehicle (UAV), intelligent signal reflector, and device-to-device (D2D) communications are investigated to improve the reliability and energy efficiency of mmWave communications in face of blockage. Next, to reduce the communication overhead, new channel modeling and user localization approaches are developed to facilitate MIMO channel estimation by providing prior knowledge of mmWave links. Using advance mathematical tools from machine learning (ML), game theory, and communication theory, this dissertation develops a suite of novel frameworks using which mmWave communication networks can be reliably deployed and operated in wireless cellular systems, UAV networks, and wearable device networks. For UAV-based wireless communications, a learning framework is developed to predict the cellular data traffic during congestion events, and a new framework for the on-demand deployment of UAVs is proposed to offload the excessive traffic from the ground base stations (BSs) to the UAVs. The results show that the proposed approach enables a dynamical and optimal deployment of UAVs that alleviates the cellular traffic congestion. Subsequently, a novel energy-efficient framework is developed to reflect mmWave signals from a BS towards mobile users using a UAV-carried intelligent reflector (IR). To optimize the location and reflection coefficient of the UAV-carried IR, a deep reinforcement learning (RL) approach is proposed to maximize the downlink transmission capacity. The results show that the RL-based approach significantly improves the downlink line-of-sight probability and increases the achievable data rate. Moreover, the channel estimation challenge for MIMO communications is addressed using a distributional RL approach, while optimizing an IR-aided downlink multi-user communication. The results show that the proposed method captures the statistic feature of MIMO channels, and significantly increases the downlink sum-rate. Moreover, in order to capture the characteristics of air-to-ground channels, a data-driven approach is developed, based on a distributed framework of generative adversarial networks, so that each UAV collects and shares mmWave channel state information (CSI) for cooperative channel modeling. The results show that the proposed algorithm enables an accurate channel modeling for mmWave MIMO communications over a large temporal-spatial domain. Furthermore, the CSI pattern is analyzed via semi-supervised ML tools to localize the wireless devices in the mmWave networks. Finally, to support D2D communications, a novel framework for mmWave multi-hop transmissions is investigated to improve the performance of the high-rate low-latency transmissions between wearable devices. In a nutshell, this dissertation provides analytical foundations on the ML-based performance optimization of mmWave communication systems, and the anticipated results provide rigorous guidelines for effective deployment of mmWave frequency bands into next-generation wireless systems (e.g., 6G).Doctor of Philosophy
Different kinds of new smart devices are invented and deployed every year. Emerging smart city applications, including autonomous vehicles, virtual reality, drones, and Internet-of-things, will require the wireless communication system to support more data transmissions and connectivity. However, existing wireless network (e.g., 5G and Wi-Fi) operates at congested microwave frequency bands and cannot satisfy needs of these applications due to limited resources. Therefore, a different, very high frequency band at the millimeter wave (mmWave) spectrum becomes an inevitable choice to manage the exponential growth in wireless traffic for next-generation communication systems. With abundant bandwidth resources, mmWave frequencies can provide the high transmission rate and support the wireless connectivity for the massive number of devices in a smart city. Despite the advantages of communications at the mmWave bands, it is necessary to address the challenges related to high-frequency transmissions, such as low energy efficiency and unpredictable link states. To this end, this dissertation develops a set of novel network frameworks to facilitate the service deployment, performance analysis, and network optimization for mmWave communications. In particular, the proposed frameworks and efficient algorithms are tailored to the characteristics of mmWave propagation and satisfy the communication requirements of emerging smart city applications. Using advanced mathematical tools from machine learning, game theory, and wireless communications, this dissertation provides a comprehensive understanding of the communication performance over mmWave frequencies in the cellular systems, wireless local area networks, and drone networks. The anticipated results will promote the deployment of mmWave frequencies in next-generation communication systems.
14
O'Sullivan, Tomás. "Design of millimeter-wave power amplifiers using InP heterojunction bipolar transistors". Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p3368992.
Testo completoAbstract (sommario):
Thesis (Ph. D.)--University of California, San Diego, 2009.Title from first page of PDF file (viewed September 17, 2009). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 118-123).
15
Ko, Chun-Lin, e 柯鈞琳. "CMOS Millimeter-Wave Amplifier Design". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/21903951042463935536.
Testo completoAbstract (sommario):
博士國立交通大學
電子工程學系 電子研究所
102
This dissertation is focused on the design methodology for CMOS millimeter-wave amplifiers. Millimeter-wave amplifier design heavily involves optimization of active devices and consideration of the distributed transmission line effect. CMOS technology scaling greatly benefits in high-frequency amplifier design. However, lacking of appropriate transmission line models in the design kit provided by foundries makes it hard to design and optimize circuits. In addition, as the geometry of on-chip transmission line differs from the modeled one, a novel model was developed to account for the geometric difference. Based on the built transmission line models, four amplifiers were designed in advanced CMOS technologies. Their operation frequencies are in the range from 60 GHz to 210 GHz. The first low-noise amplifier (LNA) was designed and implemented in 0.13 μm CMOS technology. The circuit was simulated by using software built-in microstrip model with two modified parameters. The LNA takes the supply voltage and dc current of 1.4 V and 10 mA. A gain of 3.8dB and an input/output return loss of 8.5/7.0 dB are measured at 60.3 GHz. The simulation results are in good agreement with the measured data, which shows the model is applicable to mm-wave circuit design for quick circuit evaluation. The second V-band LNA has been demonstrated in 90 nm CMOS. Low-loss microstrip lines were designed and optimized by a closed-from expression of the integrated microstrip line to realize all matching networks. Because of the proposed low-loss microstrip lines, the LNA exhibited a low noise figure of 5.6 dB and a gain of 10.8 dB at 60 GHz with only 5.5 mW from a 1.0 V power supply. The third LNA was implemented at W-band in 90 nm CMOS. In the design, the source inductive degeneration technique was used and optimized for multistage cascaded amplifiers. The LNA exhibited a noise figure of 5.1 dB and a gain of 18.1 dB at 78.5 GHz with only 8 mW from a 1 V power supply. The LNA shows better performance of noise and power with the proposed design principle than the other open literature even with better technologies. The last work presents a 210 GHz amplifier design in 40 nm digital bulk CMOS technology. The theoretical maximum voltage gain that an amplifier can achieve and the loss of a matching network are derived for the optimization of a hundred GHz amplifier. Accordingly, the bias and the size of transistors, the circuit topology, and the interstage coupling method can be determined methodically to maximize the amplifier gain. The measured results show that the amplifier exhibits a peak power gain of 10.5 dB at 213.5 GHz and an estimated 3-dB bandwidth of 13 GHz. The power consumption is 42.3 mW under a 0.8 V supply. To the best of the authors’ knowledge, this chip demonstrates the CMOS amplifier of 10 dB gain with highest operation frequency reported so far.
16
Hsieh, Cuei-Ling, e 謝翠玲. "Design of Millimeter-Wave Oscillators". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/khw9s3.
Testo completo
17
"Millimeter-wave CMOS power amplifiers design". UNIVERSITY OF CALIFORNIA, BERKELEY, 2009. http://pqdtopen.proquest.com/#viewpdf?dispub=3353454.
Testo completo
18
曾柏森. "Design of millimeter-wave mixer circuits". Thesis, 2001. http://ndltd.ncl.edu.tw/handle/50456307430526940298.
Testo completo
19
Lin, Ta-Yeh, e 林大業. "Millimeter-Wave On-Chip Antenna Design". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/spfj2j.
Testo completoAbstract (sommario):
博士國立中央大學
電機工程學系
106
In this dissertation, three type millimeter-wave on-chip antennas based on Integrated Passive Device (IPD) technology are presented. The first part of the dissertation focuses on using CMOS/IPD flip-chip cavity to achieve dual-band operation. In Chapter II, a dual-band antenna-in-package for millimeter-wave applications is presented. The proposed antenna, which consists of a radiating slot and an air-filled cavity, is fed by a microstrip loaded with two tuning open-circuited stubs through a coupling C-shape aperture to achieve dual-band characteristics. The air-filled cavity, which is formed by the space between CMOS chip and IPD substrate after flip-chip assembly process, can reduce loss and improve antenna gain. Simulation and measurement regarding antenna reflection coefficient, radiation pattern, and peak gain are conducted for design validation. The measured results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with the reflection coefficient less than -10 dB are 6.1 % and 5.8 %, respectively. The measured gains are -2 dBi at 58 GHz and 0.3 dBi at 77 GHz, respectively. The proposed antenna is well suited for dual-band millimeter-wave high data rate wireless communication systems. The second part of the dissertation focuses on millimeter-wave circularly polarization antenna designs using bond-wire radiators. In Chapter III, a V-band wide-beamwidth left-handed circularly polarized wire-bond antenna is presented. The proposed design, which is implemented by using Integrated Passive Device (IPD) process, consists of a 1-to-4 series-type ring-shape microstrip power divider and four bond-wire radiators. The design of bond-wire radiator with wide-beamwidth characteristic is described. The design method of power divider is also explained in details. The proposed antenna has been fabricated and measured. The area of the fabricated antenna is of 2.2 x 2.2 . The simulation and measurement regarding antenna reflection coefficient, radiation pattern, peak gain, and axial ratio are conducted for design validation. The measured results show that the antenna can operate in V-band and the impedance bandwidth with less than -10 dB is from 51 GHz to 67 GHz or more ( > 28% ). The measured peak gain is -0.8 dBi at 58 GHz. The measured axial ratio is less than 3 dB from 55 GHz to 65 GHz. The simulated 3-dB antenna beamwidth is more than 180 degrees. The last part of the dissertation focuses on millimeter-wave IPD dielectric resonator antenna design using bond-wire feeding structures. In Chapter IV, a V-band chip-level dual-polarized dielectric resonator antenna (DRA) implemented by using bondwires and silicon-based integrated passive device (IPD) technology is proposed. The square-shaped resonator is fed by two bondwire coupling structures which excite two degenerate modes orthogonal to each other. The resonance of bondwire itself is also found to enhance the antenna bandwidth to cover the 60-GHz band. Reasonable agreement between the simulation and measurement is obtained. The measured antenna bandwidth is from 52.8 GHz to 65 GHz. The measured isolation is better than 20 dB at frequencies of interest. The measured antenna gain is 4.5 dBi at 60 GHz. The proposed design can provide further applications for circularly polarized systems. Finally, a summary of the research results and future work are concluded in Chapter V.
20
Chan, Chin-Yan, e 詹清硯. "Design of Microwave and Millimeter-Wave Traveling Wave Switch". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/05066027040729725220.
Testo completoAbstract (sommario):
碩士國立中央大學
電機工程研究所
97
In a wireless communication system, a high performance switch is an important building block of RF front-end system. In order to achieve a broadband switch, a traveling-wave topology is applied to the circuit design. Also, the improvement and applications of the traveling-wave switch are included in the thesis. Introduction is given in chapter 1.The switch involved in the thesis are mainly based on the traveling-wave topology. The topology is described by two circuit designs with different processes and specifications in chapter 2: one traveling-wave T/R switch with a 50-Ω, λ/4 impedance transformer is designed using CMOS process, and the operating frequency is from 30 to 70 GHz. The other switch with a series transistor is designed using PHEMT process, and the operating frequency is from DC to 44 GHz. Furthermore, a technique of negative body bias is proposed to improve ciucuit performance in chapter 3. Based on the theory calculation and the experimental results, the insertion loss and power handling capability of the swiches are improved. In addition, a double-pole double-throw (DPDT) traveling-wave switch using a ring structurce is presented in chapter 4, and the operating frequency is from DC to 20 GHz. Finally, the conclusion is given in chapter 5.
21
Ping-Chen, Huang. "Design of Millimeter-Wave VCOs and Mixer". 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2307200623350400.
Testo completo
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Huang, Ping-Chen, e 黃品甄. "Design of Millimeter-Wave VCOs and Mixer". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/05931598187484568149.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
94
This thesis presents two major building blocks in wireless transceivers: the VCO and the mixer. They are both highlighted with its high-frequency performance in CMOS or SiGe technology. Due to the inherently lower unit current-gain frequency (fT) and maximum oscillation frequency (fmax) of CMOS devices as compared to III-V compound devices or SiGe HBT, it is crucial to investigate the high frequency behaviors of negative resistance cells when designing MMW CMOS VCOs. Several VCO topologies are analyzed and compared in this thesis. And it is concluded that the LC source degenerated negative-resistance cell can be a better candidate for MMW CMOS VCOs because of its better frequency behavior and the multiple dimension of design parameters that shape the frequency response of the negative resistance. The design and implementation of a 131-GHz push-push cross-coupled VCO in 90-nm CMOS technology will be described. It can be tuned from 129.8 to 132 GHz, with an estimated phase noise of -108.4 dBc/Hz at 10 MHz offset. The oscillator provides a push-push output power of -15.2 dBm and a fundamental output power of +0.33 dBm, under core current of 20 mA from a 1-V supply voltage. Maximum push-push and fundamental output powers are -11.4 dBm and +2.1 dBm, respectively. This VCO is the one with highest output frequency among CMOS VCOs. Then the LC source degenerated VCO will be demonstrated through a 114-GHz VCO in 0.13-μm CMOS technology. With core power consumption of 8.4 mW, the tuning range at the fundamental port is from 56.4 GHz to 57.6 GHz, and at the push-push port is from 112.8 GHz to 115.2 GHz. The measured phase noise at the fundamental port is -113.6 dBc/Hz at 10-MHz offset. This VCO is the first CMOS VCO beyond 100 GHz and is believed to have the best figure of merit (FOM) among millimeter-wave (MMW) VCOs using bulk CMOS processes. An 85-GHz push-push VCO in 0.15-μm GaAs pHEMT technology shows that the LC source degeneration can also be applied to a cross-coupled pair to increase the operation frequency. Under total bias current of 52 mA from a 3-V supply, the output power of this VCO is -12 dBm at 85.7 GHz, and the phase noise at 1-MHz offset is -92.33 dBc/Hz. Finally, the design of a broadband Gilbert-cell up-conversion mixer in 0.18-μm SiGe BiCMOS technology is presented. The compact MMIC has a flat measured conversion loss of 7 ± 1.5 dB and LO suppression of more than 40 dB at the RF port from 35 to 65 GHz. The power consumption is 14 mW from a 4-V supply. With chip size of 0.6 mm × 0.45 mm, this mixer has the smallest chip area ever reported, and also the highest operation frequency among up-conversion mixers using silicon-based technology.
23
Chen, Jian-Yu, e 陳建宇. "Design of broad band millimeter-wave switches". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/99160456304101597805.
Testo completoAbstract (sommario):
碩士國立交通大學
電信工程研究所
103
This thesis presents two millimeter-wave circuits. Both of the proposed circuits are fabricated by Win 0.15μm InGaAs pseudomorphic high electron mobility transistor (pHEMT) MMIC process. First, we present a 60GHz SPDT T/R switch in shunt configuration and reduce the parasitic components by FET-integrated line structure and connecting three via-holes in parallel. The SPDT switch shows low insertion loss less than 3 dB and isolation greater than 32 dB from 40 to 70 GHz. The highest isolation is achieved at 60 GHz with a low insertion loss of 2.05 dB. Second, we present a broad band millimeter-wave SPDT switch by utilizing the traveling-wave concept. The traveling-wave uses the small signal models of off-state pHEMTs and short transmission lines to form an artificial transmission line that has a low insertion loss over a broad frequency range. The SPDT switch has low insertion loss less than 5 dB and isolation greater than 20 dB from 30 to 123 GHz.
24
Chang, Shuo-Hsuang, e 張碩軒. "Design for Millimeter-Wave System Power Amplifier". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/468377.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
106
In this thesis, three amplifiers designed at millimeter-wave are demonstrated. A Q-band amplifier with the low noise and a Q-band power amplifier with broadband performance are presented. At the end, a Ka-band dual-mode power amplifier is pre-sented. The first part is an amplifier with low noise figure and medium output power ca-pability using 0.1-μm GaAs pHEMT. To minimize the noise attribution from the Warm Cartridge Assembly (WCA), the amplifier with high gain and low NF is required to suppress the noise at the input of the mixer. Measurements on the amplifier verify its OP1dB is better than 7.6 dBm from 35 GHz to 50 GHz, achieving minimum noise figure (NF) of 3.2 dB at 41GHz, with maximum power-added efficiency (PAE) of 17.9% at 35GHz. The next is a Q-band power amplifier, which is fabricated in 0.1-μm GaAs pHEMT. The power amplifier utilizes the three-stage common source and compensated matching networks to achieve broadband performance. The power amplifier with flat gain and OP1dB is required for the calibration accuracy of the ALMA Band-1 Receiver. Measurements on the power amplifier verify its OP1dB is better than 19.6 dBm from 35 GHz to 50 GHz, achieving maximum power-added efficiency (PAE) of 27.2% at 40 GHz. Lastly, a Ka-band dual-mode power amplifier in 65-nm CMOS is presented. The PA provides the capability of dual mode operation, higher-power (HP) and low-power (LP), and each mode is optimally matched by using the switched-capacitor. A switched-capacitor is fully considered to implement a tunable matching network in terms of power-handling capability, insertion loss. In the HP/LP mode, the presented PA achieves a measured small-signal gain of 13.8/10.5 dB, a saturated output power value of 19.9/17 dBm, a 1-dB output power value of 17/14 dBm, a peak power-added efficiency (PAE) value of 25.8/22.8 %, a power-added-efficiency at OP1dB value of 14.5/17.4 % at 34 GHz, respectively. The PAE at 17-dBm output power of the PA var-ies from 14.5% to 22.8% based on the LP mode of operation at 34 GHz.
25
Liu, Che-Wei, e 劉哲維. "Design of Millimeter-Wave Triple-Push Oscillators". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9pkd7a.
Testo completoAbstract (sommario):
碩士國立清華大學
電機工程學系所
106
In recent years, as semi-conductor manufacturing technology becomes more and more mature, the researches of wireless communication systems increase significantly. The demands of high performance electronic products grow day by day. Therefore, circuits with high data rate, low costs and low power consumption become very popular. Furthermore, as the frequency bands being widely used saturates, desired frequency targets to higher bands and occupies a wider bandwidth to achieve high speed operation. As a result, radio frequency (RF) transceiver system becomes very important. Typical RF transceiver front-ends include power amplifier (PA), voltage-controlled oscillator (VCO), low-noise amplifier (LNA), mixer and antenna. This thesis focuses on the features and designs of millimeter-wave triple-push oscillators. In this thesis, three triple-push oscillators are proposed in 90-nm CMOS process. In work I, a triple push oscillator is realized with 60 degree wires and capacitance-splitting technique to reach better symmetry and higher negative transconductance. The oscillation frequency is 215.4 GHz, the output power is -16.28 dBm and the phase noise is -88.5 dBc/Hz at 1-MHz. The second work uses three unbalanced MOSFET pairs to achieve higher performance of the third harmonic. It has -13.8 dBm output power at 201.2 GHz, and the phase noise is -80.6 dBc/Hz at 1-MHz. Work III uses self-mixing technique to have better symmetry and PMOS push-push frequency doubler to enlarge second harmonic signal. It oscillates at 92.2 GHz with 8.4% frequency tuning range. The output power is -18.2 dBm, and the phase noise is -82.8 dBc/Hz at 1-MHz.
26
HSIEH, YI-CHE, e 謝宜哲. "Design of Millimeter-Wave CMOS Butler Matrix". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/9s87sy.
Testo completo
27
Mei-Chao, Yeh. "Design of CMOS Microwave and Millimeter-Wave Switches". 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1507200515572600.
Testo completo
28
Yi-Hsien, Cho. "Design of Microwave and Millimeter-wave CMOS VCOs". 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2207200519074500.
Testo completo
29
Wu, Pei-Si. "Microwave and Millimeter-Wave Balun Design and Applications". 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200622211700.
Testo completo
30
Gordon, Michael. "Design methodology for millimeter-wave low-noise amplifiers". 2006. http://link.library.utoronto.ca/eir/EIRdetail.cfm?Resources__ID=450399&T=F.
Testo completo
31
Lai, Kuan-Ting, e 賴冠婷. "Millimeter-Wave CMOS and GaAs Power Amplifier Design". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/952xfv.
Testo completoAbstract (sommario):
碩士國立交通大學
電子工程學系 電子研究所
102
The thesis will propose three circuits which are designed in CMOS and GaAs technology, including a 90nm 77 GHz narrow band, a 65nm 77-110 GHz wide band Ｐower Amplifier and a 0.1 um GaAs 77 GHz narrowband power amplifier. The 90nm CMOS 77 GHz narrow band amplifier has four stages with 1:2:4:8 configuration and a eight-way in-phased combiner at the output stage. There are three stages with 1:2:4 configuration and a four-way in-phased combiner at the output stage in the 65nm CMOS 77-110 GHz wideband amplifier. The 0.1 um GaAs 77 GHz narrow band power amplifier has three stages with 1:2:4 configuration. The input DC-blocking is used by a couple line instead of a capacitance, and the output stage is used a four-way in-phased combiner. The design approach and the behavior of these circuits will be well discussed and clearly illustrated.
32
Liang, Yun-Ge, e 梁芸閤. "Millimeter Wave Communication: Cellular System Characteristics and Design". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/m7vtth.
Testo completoAbstract (sommario):
碩士國立交通大學
電信工程研究所
104
The large available bandwidth of millimeter-wave (mmWave) bands make it an attractive candidate band for next generation cellular communication systems. To overcome the associated severe path loss, directional antennas have to be employed at both sides of a link. Unlike conventional cellular systems in which UEs use omni antennas and the base stations (eNBs) use either omni or sector (low gain) antennas, an mmWave based system requires high pointing accuracy. In this thesis we consider the system in which both sides employ switch beam array antennas and the beam directions rotate synchronously and periodically. The signal-to-noise-plus-interference ratio (SINR) coverage probability performance has been analyzed for such a scenario before. The resulting analytic expressions are complicated and the relations among various system and channel parameters are far from clear. Through many simulation eorts we analyze conditions in which channel fading and/or interference can be neglected. The simplication allows us to analyze and interpret the the eects of other (major) system and channel parameters on the coverage probability and the optimal eNB density. It also enable one to predict performance in dierent operating environments. As the SINR (SNR) coverage analysis assumes that an UE is always served by the eNB with smallest link (path) loss and no pointing error. We modify this assumption to analyze the cell search statistics in a more realistic condition where cell search is achieved only when both sides are able to synchronize and decode each other's ID, including those of the eNB, UE and beam position.
33
Tseng, Jeffrey Ronald, e 鄭伊佐. "Design of Millimeter-wave CMOS LNA and VCO". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/02486733196879657894.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
98
Due to the increasing demand of higher data rate of the modern communication system, wireless communication system in millimeter-wave has become an important topic of interest. Recently, due to the rapid growth of the foundry process, it’s an essential topic to utilize sub-micron process to realize the high frequency essential element of the wireless communication system. Complementary metal-oxide-silicon field-effect transistors (CMOS) is the most attractive process because of its advantages as low cost and high integrity. The goal of the thesis is to utilize 65-nm CMOS process to design and realize the two essential elements of the wireless communication system, low noise amplifier and voltage control oscillator. Firstly, the basic of the wireless communication system is introduced. Secondly, the basic principle and circuit design of each essential element are introduced. The thesis proposes a low noise amplifier and a voltage control oscillator as the structure and design method. The first circuit utilizes TSMC 65-nm CMOS process to realize a low noise amplifier in 68-75 GHz, with a gain of 17 dB, and a noise figure of 7.4 dB. The second circuit also utilizes TSMC 65-nm CMOS process to realize a voltage control oscillator. In order to reach a better phase noise performance, conventional LC resonator is transformed to improve its quality factor. An oscillator, operating at 55.6 GHz, with a tuning range of 2%, is realized. Under 5 mW DC power consumption, it reaches a phase noise performance as -97 dBc/Hz at 1-MHz offset.
34
Li, Chao-Chieh, e 黎兆杰. "Design of Microwave and Millimeter-wave CMOS VCOs". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/48641582628653812251.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
95
A low phase noise VCO is indispensable in modern communication system. The portable and universal wireless applications drive us to investigate low power consumption and low cost system. Therefore, to design a low phase noise VCO with low power consumption and low cost is always a challenge. The goal of the thesis is to design and implement VCOs in microwave and millimeter-wave region using CMOS technology. The thesis consists of three parts. The first part introduces the basic of phase noise and discusses the theory of transformer-based LC-tank VCOs. A new topology of transformer-based complementary VCO which achieve a phase noise of -106 dBc/Hz at 1-MHz offset at 21 GHz with a low power consumption of 9.6 mW and a compact chip size of 0.164 mm2 is designed and implemented in this part. In the next part, the theory and advantages of ring oscillator and multi-push VCO are introduced, respectively, and a ring-based triple-push VCO with extremely wide tuning range is proposed. A tradition ring oscillator and triple-push topology are combined to extend the tuning range. The oscillation frequency can be reached from 0.2 GHz to 32.8 GHz with a miniature chip size of 0.095 mm2. Another transformer-based topology, transformer feedback, is analyzed and implemented in 20 GHz in the third part. The transformer feedback VCO achieves a phase noise of -107 dBc/Hz at 1-MHz offset with a power consumption of 16 mW and a compact chip size of 0.154 mm2. The basics and application of QVCO is discussed later. Then a transformer feedback QVCO is designed and fabricated by TSMC 0.18-
35
Wu, Pei-Si, e 吳佩憙. "Microwave and Millimeter-Wave Balun Design and Applications". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/46964944538785785251.
Testo completoAbstract (sommario):
博士國立臺灣大學
電信工程學研究所
94
The purpose of this dissertation is to develop microwave and millimeter-wave baluns and their applications using commercial standard GaAs based HEMT and Si based CMOS MMIC processes. Four planar and five multi-layer transformer baluns are presented in this dissertation. The coupled-line equivalent models are used to synthesis the initial design of the planar transformer baluns up to 50 GHz. Four singly balanced diode mixers using these for planar transformer baluns are implemented using commercial GaAs 0.15 um HEMT processes. The chip sizes of these MMICs are all within 0.3 mm2 and two of these circuits achieve bandwidths of 100% and 105% between 10 to 45 GHz. Two new phase/amplitude control MMICs using vector sum method are proposed and implemented employing 0.18 um CMOS technology. The analysis, design equations, and building blocks of these two circuits are developed. These two MMICs demonstrate 360° continuous phase and amplitude control with 37 dB dynamic ranges from 15 to 20 GHz, the chip sizes are 0.72 and 0.58 mm2. A modified Marchand balun is designed using multiple air-bridges, and used in a singly balanced diode mixer and 77 GHz automotive radar system at last. These two circuits are implemented using GaAs 0.15-um HEMT process. The broadband diode mixer achieves conversion loss of better than 10 dB from 46 to 78 GHz and the chip size is only 0.57 mm × 0.52 mm. The single 77 GHz transceiver chip with 3 × 2 mm chip size combines a 19.25 to 77 GHz quadrupler, a buffer amplifier, two medium power amplifiers, two switches, a low noise amplifier, and a fundamental mixer. It features a 7.9-dBm RF output power at 77 GHz in the transmitting mode, and the receiver has a conversion loss of 0.7 dB with RF frequency of 77.05 GHz and IF frequency of 50 MHz.
36
Yeh, Mei-Chao, e 葉梅昭. "Design of CMOS Microwave and Millimeter-Wave Switches". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/03409762334700837179.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
93
This purpose of the thesis is to develop the CMOS switches in microwave and millimeter wave frequency range. Two types of the switch topologies are investigated. The simplified small-signal model of passive FET is developed to simulate the insertion loss and isolation; while the nonlinear model which consists of capacitance and voltage-dependent current source is used to predict the power handling capability of the switch. The first method to implement CMOS switch in wireless communication applications is the series-shunt topology. In order to reduce the insertion loss and increase the P1dB, the floating-body technique is used. The series-shunt switch in standard bulk 0.18-um CMOS process achieves a measured P1dB of 20 dBm, an insertion loss of 1.1 dB, and an isolation of 27 dB at 5.8 GHz. It also achieves a measured insertion loss of 0.65 dB and an isolation of 35 dB at 2.4 GHz. The effective chip size is only 0.03 mm2. The measured data agree with the simulation results well, including the power handling capability. The second method to implement the CMOS switch is using traveling-wave concept. A wideband SPDT switch in standard bulk 0.13-um CMOS process is demonstrated. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. Due to the different requirements in the transmit and receive paths, the switch is designed to be asymmetric. In the receive path, the switch achieves a measured insertion loss less than 2.7 dB, a measured isolation better than 26 dB from 27 to 50 GHz. On the other hand, for the transmit path, the switch also achieves a measured insertion loss less than 4.4 dB, and an isolation better than 14 dB from 30 to 63 GHz. At 40 GHz, a measured input P1dB of 13.8 dBm is attained. The chip size is only 0.8 x 0.5 mm2. The measured data agree with the simulation results well. This work is the first CMOS switch in millimeter-wave frequency range. A dc-to-50-GHz SPDT switch using traveling-wave concept in standard bulk 0.18-um CMOS process is also implemented. Instead of the quarter wave length transmission lines, a series transistor can be used for the wide bandwidth operation. The switch achieves a measured insertion loss of less than 6 dB, a measured isolation of better than 38 dB from dc to 50 GHz. The measured input P1dB of 17.4 dBm at 5.8 GHz and 19.6 dBm at 40 GHz is attained. The chip size is only 0.5 x 0.5 mm2. This work is the first CMOS switch from dc to millimeter-wave frequency with a miniature chip size.
37
Cho, Yi-Hsien, e 卓宜賢. "Design of Microwave and Millimeter-wave CMOS VCOs". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/54061091113754167310.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
93
A low phase noise VCO is indispensable in modern communication systems. The demand for high data transmission drives us to investigate high frequency systems. Therefore, to design a high frequency oscillator with low phase noise is important. The goal of the thesis is to design and implement VCOs in microwave and millimeter-wave region using CMOS technology. This research focuses on millimeter-wave oscillators and quadrature VCO (QVCO) in the 5-GHz band. The thesis can be divided into three parts. The first part introduces the application of oscillators and discusses the theory of LC-VCO. A complementary LC-tank VCO is designed and implemented in this part. The theory and advantages of push-push VCO are introduced, next, and a new low phase noise push-push VCO is implemented. The last part of this thesis discusses the basics and application of QVCO. Three new QVCOs are proposed and implemented. The design concepts together with their advantages are also discussed. In the thesis, a VCO combining complementary cross-coupled and push-push topology is proposed. The circuit is fabricated by TSMC 0.18-μm CMOS process and it achieved a phase noise of -97 dBc/Hz at 1-MHz offset at 52 GHz with a miniature chip size of 0.2-mm2 area. Besides high frequency oscillators, QVCOs applied to the 5-GHz band is also covered. Firstly, a switchable QVCO with wide tuning range is designed and fabricated by TSMC 0.18-μm CMOS process. The circuit is realized by using serial coupled techniques to combine two complementary cross-coupled VCOs. From the measurement results, the circuit achieves a phase noise of -120 dBc/Hz at 1-MHz offset at 5.5 GHz with 20% tuning range. Next, a QVCO is implemented by Colpitts oscillator because Colpitts oscillator shows better phase noise than cross-coupled topology. The quadrature phase is realized by using parallel coupling techniques. However, the parallel coupling methods degrade the phase noise performance and increase power consumption. Therefore, the parallel coupled Colpitts QVCO does not show lower phase noise than serial coupled complementary QVCO. Finally, a Colpitts QVCO with a new coupling approach is presented. The circuit has the advantages of low power consumption and low phase noise. From simulations, the QVCO achieves a phase noise of -123 dBc/Hz at 1-MHz offset at 5 GHz with 6-mW dc power consumption.
38
Hsieh, Chi-Kai, e 謝繼開. "Design of Microwave and Millimeter-wave CMOS VCOs". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/96419852975357028529.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
96
A low phase noise and low DC power consumption VCO is indispensable in modern communication systems. Due to the demand for high data transmission drives in high frequency systems, a high frequency oscillator with low phase noise and low DC power consumption is important. The goal of the thesis is to design and implement VCOs in microwave and millimeter-wave region using CMOS technology. This research focuses on low phase noise and low DC power consumption oscillators. The thesis can be divided into three parts. The first part introduces the application of oscillators and discusses the theory of LC-VCO. Next, we discuss the basics and application of Colpitts VCO and two modified Colpitts VCO are proposed for low phase noise or low DC power consumption. In the last part of this thesis, the complementary VCO using transformer feedback is proposed. The VCO maintain the low phase noise while low DC power consumption is considered. Firstly, a modified Colpitts VCO for low phase noise is implemented. The VCO combine a transformer in the conventional Colpitts to improve the phase noise in the high frequency. The VCO operates at 23.5 GHz with phase noise about -115 dBc/Hz at 1-MHz offset. Second modified Colpitts VCO is implemented for low DC power consumption. The VCO use the transformer which replace the inductor and the cross-coupled pair in the conventional Colpitts to lower DC power consumption. The VCO operates at 23 GHz with phase noise about -100 dBc/Hz at 1 MHz offset and only consumes 4 mW. Besides, the VCO has phase noise about -109 dBc/Hz at 1 MHz offset while consumes 10 mW. Finally, the complementary structure with transformer is proposed for ultra low power consumption. The VCO is fabricated by TSMC 0.18-μm CMOS process. From the measurement results, the VCO achieves a phase noise of -118.5 dBc/Hz at 1-MHz offset at 8.2 GHz with 11.7% tuning range and the VCO only consumes 0.66 mW.
39
Lin, Kun-You, e 林坤佑. "Design of Millimeter-Wave Switches Using GaAs HEMT". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/37233986139660319061.
Testo completoAbstract (sommario):
博士國立臺灣大學
電信工程學研究所
91
The purpose of this dissertation is to develop millimeter-wave switches employing commercial standard GaAs HEMT MMIC processes to achieve better performance. Two methods to improve the switching characteristics of the transistors were used to design the millimeter-wave MMIC passive HEMT switches. The small-signal and nonlinear models for passive FET switch design were investigated in this dissertation. The nonlinear model consists of resistive HEMT model and voltage-dependent current sources is developed, which can be used to simulate the power saturation of the passive FET (or HEMT) switches. The first method for improving switching characteristics of the passive FET is using the impedance transformation network. By using the impedance transformation network, the on- and off-state impedances of a passive FET are transformed to near open and near short simultaneously, and a Q-band and a V-band MMIC SPDT switches are designed via this concept using GaAs PHEMT process. The device selection in circuit design using the simplified models of the passive FET is also discussed. The Q-band switch has a measured isolation better than 30 dB for the off-state and 2-dB insertion loss for the on-state from 38 GHz to 45 GHz, while the V-band switch demonstrates a measured isolation better than 30 dB for the off-state and 4-dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation of the switches using impedance transformation network outperforms the conventional resonant-type designs in millimeter-wave frequency range. Wideband passive FET switches using traveling wave concept are also presented in this dissertation. The traveling-wave switch combines the shunt off-state transistors and series microstrip lines to form an artificial transmission line with 50- characteristic impedance. The design method and design parameters of the traveling-wave switches are discussed by using the simplified models of the passive FET. A 15-80 GHz SPDT switch in conjunction with quarter-wavelength impedance transformers demonstrates an insertion loss of less than 3.6 dB and an isolation of better than 25 dB. Another type of wideband switches were designed by using series HEMT switch and traveling-wave concept, and the operating band can be extended to dc. A dc-80 GHz SPST and a dc-60 GHz SPDT switches are also developed with compact chip size. From dc to 80 GHz, the insertion loss and isolation of the SPST switch are better than 3 dB and 24 dB, respectively. The SPDT switch has an insertion loss of better than 3 dB and an isolation of better than 25 dB from dc to 60 GHz.
40
Wei, Shufen, e 魏淑芬. "Design of MMIC Components for Millimeter-Wave Receivers". Thesis, 2001. http://ndltd.ncl.edu.tw/handle/88196637527435525433.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
89
Low noise amplifiers and mixers are essential components in communication system front end in wireless local area networks, satellite links, and radiometric sensors. The LNA dominates the noise figure and input VSWR of the overall system because it is the first component received the signal from the antenna. Mixer performs the frequency transformation of the communication link. This thesis is divided into three main parts. The first part briefly introduces the basics of the mixers and the analysis of the anti-parallel diode pair mixing structure. The second part is the design of W-band and Q-band MMIC sub-harmonically pumped (SHP) mixers. The third part is the design of a K-band and a Q-band LNA. The W-band SHP mixer utilizes the second harmonic of the local oscillation signal (LO at 42.5GHz) to perform the mixing with the RF signal. The measurement results showed a conversion loss of 21 dB with IF from 10-15 GHz at 42.5 GHz LO drive of 13 dBm. The model of the Schottky diode used in the mixer design is also discussed. The equivalent circuit model is modified by curve-fitting the measured results. To obtain a design with larger bandwidth, the W-band SHP mixer is redesigned according to the refined model. The measured results showed a conversion loss of 17 dB with IF from 1-20 GHz at 42.5 GHz LO drive of 10 dBm. The Q-band SHP mixer uses the GCPW (Grounded Coplanar Waveguide) as the transmission line. It utilizes the 8th harmonic of the local oscillation signal (LO at 4.25GHz) to mix with the RF signal. The simulated results showed a conversion loss of 20 dB with IF around dc at 4.25 GHz LO drive of 15 dBm. Since the design is still in fabrication, only the simulated results are shown in this thesis. The K-band two-stage LNA achieved a small signal gain of 22.5dB at 24GHz, and the Q-band three-stage LNA achieved 24dB at 40GHz.
41
Li, Chao-Chieh. "Design of Microwave and Millimeter-wave CMOS VCOs". 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1907200721315100.
Testo completo
42
Hsieh, Chi-Kai. "Design of Microwave and Millimeter-wave CMOS VCOs". 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200800275000.
Testo completo
43
Kuo, Shun-Chung, e 郭瞬仲. "Design of Millimeter Wave Uniplanar Combline and Interdigital". Thesis, 1997. http://ndltd.ncl.edu.tw/handle/17546361598414964689.
Testo completoAbstract (sommario):
碩士國立交通大學
電信研究所
85
The combline and interdigital filter are two of the smallest size in those of microwave and millimeter wave filters. Usually, most of these filters are realized in strip line or microstrip line circuit type. However, when the frequency goes up to millimeter wave frequency range, these filter using above mentioned lines becomes very difficult or even impossible to realize. This is mainly due to the strong parasitic effects such as wraparound inductance, open end fringing capacitance, etc. All these parasitics were greatly reduced if uniplanar circuit was chosen. Without these parasitics to build a combline or interdigital filter in millimeter wave frequency range will be possible. These type of filters conventionally consist of multi- coupled lines will have big problem when using uniplanar line structure. Lack of accurate circuit model, and easy excite of unwanted modes make this uniplanar multi-compled line structure unusable. In this thesis, we plan to develop a novel circuit structure which uses at most two coupled uniplanar lines. The configuration is still similar to that of combline and interdigital filter. This method eliminates the multi-coupled lines problem. How to build an accurate equivalent circuit model is the main purpose of this thesis. It is believed that after finishing the thesis, an effective method to analyze and synthesize the circuit will be developed. Some prototype circuits will be built to verify the effectiveness of this method.
44
Liao, Yenning, e 廖彥寧. "Design of Millimeter-Wave CMOS Balanced Bandpass Filters". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/41762220939291589786.
Testo completoAbstract (sommario):
碩士國立中正大學
電機工程研究所
100
This thesis investigated V-band single-ended-to-balanced and fully-balanced bandpass filters in CMOS technology. These balanced bandpass filters were designed based on three-line stepped-impedance resonator to obtain differential output phases and were incorporated with the ground plane reformation to minimize the circuit size. A transmission zero near passband was generated to enhance stopband suppression and common-mode rejection ratio. Three CMOS V-band filters were designed. First, the CMOS 0.18-m single-ended-to-balanced bandpass has a measured insertion loss less than 4 dB and the return loss better than 14 dB in 55-65 GHz. The power imbalance is less than 0.5 dB and the phase imbalance is less than 3˚. The common mode rejection ratio (CMRR) is better than 25 dB. The chip size, without input and output GSG pads, is 0.171 mm2. Second, the 90-nm single-ended-to-balanced bandpass filter has a simulated insertion loss less than 3.7 dB and the return loss is larger than 14 dB in 55-65 GHz. The power imbalance is less than 0.3dB, and the phase imbalance is less than 2˚. The CMRR is better than 35 dB. The chip size, without input and output GSG pads, is 0.0398 mm2. The CMOS 90-nm fully-balanced bandpass filter has a simulated insertion loss less than 4.4 dB and the return loss better than 14 dB in 55-65 GHz. Third, the common mode rejection ratio is better than 25 dB. The chip size, without input and output GSG pads, is 0.132 mm2. These results demonstrate the proposed differential bandpass filtering configuration with ground plane reformation achieve high performances and a compact chip size.
45
KUO, YEN-ZHIH, e 郭彥智. "Optimal Beam Sweeping Design for Millimeter-Wave Communication". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/936wqj.
Testo completoAbstract (sommario):
碩士國立虎尾科技大學
電子工程系碩士班
106
To achieve high transmission rates, in the mobile networks, exploiting spectrum above 6 GHz (i.e., millimeterwave, mmWave) in construct to spectrum below 6 GHz of crowded arrangement has been regarded as a promising and inevitable feature. However, suffering from severe signal attenuation, transmission range using mmWave could be limited. To provide seamless services in mobile networks, short transmission range however may increase the number of handovers. To conquer this issue, the beamforming technology has been mandatorily adopted for mmWave communications. With the beamforming, a transmitter and a receiver may concentrate the transmission power (resp. reception power) on a certain beam direction, and therefore the transmission range could be further extended. For this goal, a transmitter (and a receiver) may divide its transmission (reception) area into a certain number of beam directions. A link between a transmitter and a receiver can be created only if the transmission beam direction and reception beam direction are arranged toward each other at the same time, and this case is referred as beam alignment. Due to the inherent mobility of each user equipment (UE), continuous beam sweeping may be inevitable. This operation could be a dominating factor to invoke unacceptable access latency nullifying engineering merits of mmWave. In this thesis, foundations of the latency-optimal beam sweeping scheme is derived, which is composed of two stages : initial access and subsequent access. For initial access without prior mobility knowledge, a two-prime modular clock based beam sweeping scheme is proposed to generate beam sweeping sequences which guarantee bean alignment with the theoretically optimum latency performance. For subsequent access with mobility knowledge, we further derive the beam sweeping scheme to achieve the theoretically optimum performance. The provided design consequently offers inevitable principles to practice mmWave based mobile networks.
46
Chao, Wei-Pang, e 趙維邦. "Design and Analysis of Millimeter-Wave Power Amplifier". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/2juqh7.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
106
As the increase of the demands of wider bandwidth and faster data rate nowadays in the transmission communication, the 38GHz frequency is regarded as one of the candi-dates of the 5G communication network. This thesis is divided into two parts. In the first part, three broad band 38GHz Power Amplifiers fabricated in 0.15-µm enhancement mode (E-mode) GaAs PHEMT are pre-sented. The power amplifiers are with different output stage matching design and one of the power amplifier is designed with two versions, with and without gate bias and ESD protection circuit. The proposed power amplifiers can achieve OP1dB of 21.7 dBm "±" 2 dB / 22 dBm "±" 2 dB, Psat of 23.6 dBm "±" 0.6 dB / 24 dBm "±" 2 dB with 20.1 "±" 4% / 21.7 "±" 4%PAEmax in the frequency range of 36 to 40 GHz and provides small signal gain of 19.8 dB / 17.6 dB. The second part shows the power amplifier operated at 38 GHz with diode linearizer which is fabricated in 0.15-µm enhance mode (E-mode) GaAs PHEMT process. This proposed PA utilizes a parallel diode to reduce third-order intermodulation for the im-provement of linearity. The proposed power amplifier achieves OP1dB of 22.8 dBm "±" 0.5 dB, Psat of 23.9 dBm "±" 0.5 dB with 22 "±" 6% PAEmax in the frequency range of 36 to 40 GHz and provides small signal gain of 19.3 dB. When linearizer turns on, it achieves linear output power of 15 dBm and reduces IMD3 to -45 dBc with two tone test signals.
47
Xu, Simin. "Analysis and Design of Millimeter Wave Cellular Networks". Master's thesis, 2021. http://hdl.handle.net/1885/224530.
Testo completoAbstract (sommario):
Millimeter wave (mmWave) communications has been widely acknowledged as an attractive strategy for the rapidly growing data rate requirements of cellular user equipments (UEs), due to the vast amounts of available frequencies at the mmWave band. However, the unique propagation characteristics of mmWave, including 1) high path loss, 2) extreme sensitivity to blockage, and 3) rapid channel fluctuations, bring serious challenges to the deployment of mmWave cellular networks. Against this background, this thesis focuses on the analysis and design of mmWave cellular networks.
In Chapter 1, the motivation of the studies presented in this thesis is described. Moreover, a literature review of several key research topics is presented, including mmWave channel models, mmWave-enabled heterogeneous networks (HetNets), mmWave precoding, mmWave-based non-orthogonal multiple access (NOMA), and mmWave prototypes. Furthermore, an overview of this thesis is provided.
In Chapter 2, a two-tier mmWave cellular HetNet is considered. As pointed out by the 3rd Generation Partnership Project (3GPP), a major issue in the HetNet is that high-power BSs are often heavily loaded, while low-power BSs are always lightly loaded and therefore not fully exploited. This load disparity inevitably leads to suboptimal resource allocation across the network, where a large number of UEs may be associated with one high-power BS but experience poor date rates. To increase the load of low-power BSs and strike a load balance between high-power BSs and low-power BSs, an association bias factor needs to be added to increase the possibility that UEs are associated with low-power BSs. In this chapter, we conduct novel analysis to assess the impact of the bias factor on the rate coverage performance of the considered network. In order to obtain tractable analytical results on the rate coverage probability, we model the considered network using a stochastic geometry based approach.
We first analyze the loads of high-power BSs and low-power BSs, based on which we derive a new expression for the rate coverage probability of the network.
Through numerical results, we demonstrate the correctness of our analysis. In addition, we thoroughly examine the impact of load balancing and various network parameters on the rate coverage probability, offering valuable guidelines on the design of practical mmWave HetNets.
In Chapter 3, a relay assisted mmWave cellular network is considered. In this network, the BS adopts either the direct mode to transmit to the destination UE, or the relay mode if the direct mode fails, where the BS transmits to the relay and then the relay transmits to the destination UE. To address the drastic rotational movements of destination UEs in practice, we propose to adopt selection combining at destination UEs. Similar to Chapter 2, in order to obtain tractable analytical results on the system-level coverage probability, we model the system using a stochastic geometry based approach. New expression is derived for the signal-to-interference-plus-noise ratio (SINR) coverage probability of the network. Using numerical results, we first demonstrate the accuracy of our new expression. Then we show that ignoring spatial correlation, which has been commonly adopted in the literature, leads to severe overestimation of the SINR coverage probability. Furthermore, we show that introducing relays into a mmWave cellular network vastly improves the coverage performance. In addition, we show that the optimal BS density maximizing the SINR coverage probability can be determined by using our analysis.
In Chapter 4, a summary of the conclusions drawn from this thesis is presented. Moreover, a number of future research directions are identified, including integrated mmWave/sub-6 GHz cellular networks, the mobility support in mmWave cellular networks, ultra-low latency mmWave cellular networks, and the transport layer design of mmWave cellular networks.
48
Huang, Jhih-Yu, e 黃智宇. "Design of Doubler for Microwave and Millimeter-wave Applications". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/72362821589167333317.
Testo completo
49
Peng, Chung-Te, e 彭宗德. "Design of Microwave and Millimeter-wave Wideband CMOS VCOs". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/65784999365522336276.
Testo completoAbstract (sommario):
碩士國立臺灣大學
電信工程學研究所
96
In the last few years, the explosive development in wireless communication has resulted in increasing demands for transceivers operating in multi-standard and multi-band communication systems. The emerging wireless standards have pushed researchers to look for low phase noise and wideband VCO capable of operating at several frequency bands. Therefore, to design a wide tuning range VCO with low phase noise is challenging in CMOS technology. The goal of the thesis is to design and implement wideband VCOs in microwave and millimeter-wave region using CMOS technology. This research focuses on the LC-VCO with switched coupled inductors. The thesis can be divided into three parts. The first part introduces the application of oscillators and discusses the theory of LC-VCO. In the next part, two wideband VCO designs are presented. The first one is a NMOS-only cross-coupled VCO using the switched coupled inductor with terminated capacitor. However, the chip is just a function work due to underestimating the loss of the switches. The VCO only has the oscillation frequency from 8.42 GHz to 11.24 GHz. The other one is also designed for wide tuning range using complementary cross-coupled topology but in high frequency. The VCO operates from 31.86 GHz to 35.26 GHz with phase noise about -89 dBc/Hz at 1 MHz. At the last part, a wideband VCO with 88.6% tuning range is demonstrated. The VCO modifies the drawback in the first chip with accurately estimating the totally loss. In this circuit, a novel switched coupled and varactor-tuned inductor is used. This VCO demonstrates a continues tuning range from 7.82 GHz to 20.27 GHz. The measured phase noise are -106.6 dBc/Hz when center frequency is 7.82 GHz at 1 MHz offset frequency and -85.11 dBc/Hz when center frequency is 20.27 GHz at 1 MHz offset frequency. The measured Vdd is 1.3 V with a core current 6 mA, and the chip size is 0.325mm2.
50
WANG, CHUN-LONG, e 王蒼容. "Modeling and Design for Millimeter-wave Flip-chip Transitions". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/77882172209538503076.
Testo completoAbstract (sommario):
博士國立臺灣大學
電信工程學研究所
91
To improve the electrical performance of the flip-chip transition, a step by step procedure is proposed in this thesis. To begin with, the equivalent circuit of the transition is extracted from the full-wave simulation result, which shows an overall capacitive effect. Then, a matching circuit which resembles a resonant phenomenon is proposed to achieve minimum reflection in the desired frequency band by simply changing the length of the resonance section. The bandwidth over which the return loss is greater than 20dB is 17.5~26% for single resonance design and 11.5% for transformer design. The corresponding insertion loss in the pass band is less than 1.5dB and 0.05dB, respectively. Also, to enhance the low frequency response of the resonant structure, a discrete equivalent circuit is derived. Based on the equivalent circuit, the transition could be optimized to result in a return loss level lower than 20 dB up to 45.5, 36.3 and 34.3 GHz for the cases of resonance length Lstg=0.24, 0.48 and 0.96 mm, respectively, for the single resonant design. Also, the return losses for the transformer design is optimized to have a return loss level lower than 20 dB up to 49.6, 33.4, 25.3 and 18.2 GHz for the cases of resonance length Lstg=0.12, 0.24, 0.48 and 0.96 mm, respectively. Although the matching circuit designed via the resonant idea is good, it will sacrifice the chip areas in the longitudinal direction. To save the chip areas, a high impedance transmission line fabricated on the mother board was proposed for compensating the capacitive effect of the conventional flip-chip transition. It can be shown that the ideal transmission line of a higher impedance value may represent the inductor more suitably because it has a stronger inductive effect. Also, the transition implemented with a thinner strip performs better than the one with wider slot since the step discontinuity is small. Hence, the high impedance compensation adopting the higher value of ZH and thinner value of strip has the best performance and smallest size. Even the chip areas are saved by adopting the high impedance transmission line on the mother board, the improvement is remarkable in the low frequency range only because the equivalent circuit of the structure resembles a prototype of the low pass filter. Thus, to enhance the high frequency response and save areas in the longitudinal direction, a local compensation design is proposed. By properly choosing a suitable ground retreat to control the zero frequency, the flip-chip transition can be designed to achieve an optimal performance over a wide frequency band of interest with some occupied area on the transverse direction of the chip as trade off. The applicability of the design idea from DC up to 60 GHz has been strongly supported by the measurement data in a scaled structure, which approves the feasibility of this technique. For realistic implementation of the flip-chip transition, the conductor thickness, which is comparable to the strip and slot width of the coplanar waveguide, should be considered in the transition design. Ignoring the conductor thickness will result in a 2 difference in the feedline impedance for the case we are discussing. Also, a procedure for acquiring the correct value of feedline impedance Zf is derived in order to have an accurate calibration of the measurement data. When the impedance is carelessly chosen in the measurement, there would be 4~5 dB differences between the measurement and simulation data for the case with ground retreat on the mother board and 10 dB difference for the one with retreats on both sides.