Articoli di riviste: "Microelectronic devices"

1

Brodie, I., e P. R. Schwoebel. "Vacuum microelectronic devices". Proceedings of the IEEE 82, n. 7 (luglio 1994): 1006–34. http://dx.doi.org/10.1109/5.293159.

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von Windheim, Tasso, Kristin H. Gilchrist, Charles B. Parker, Stephen Hall, James B. Carlson, David Stokes, Nicholas G. Baldasaro et al. "Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters". Micromachines 14, n. 5 (29 aprile 2023): 973. http://dx.doi.org/10.3390/mi14050973.

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This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10−9 S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments.

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Srivastava, V. "THz vacuum microelectronic devices". Journal of Physics: Conference Series 114 (1 maggio 2008): 012015. http://dx.doi.org/10.1088/1742-6596/114/1/012015.

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MANUSHIN, Dmitrii V., Guzel' R. TAISHEVA e Shamil' I. ENIKEEV. "Russian microelectronics: Current state-of-the-art, logistics, management issues, crisis response measures". National Interests: Priorities and Security 19, n. 5 (16 maggio 2023): 808–42. http://dx.doi.org/10.24891/ni.19.5.808.

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Subject. This article discusses the prospects for the development of Russian microelectronics and import substitution issues. Objectives. The article aims to develop measures to support Russian developers of microelectronic devices. Methods. For the study, we used the abstract-logical, computational-constructive, and case study methods. Results. The article proposes certain measures to support the microelectronics industry in Russia. Conclusions. The proposed measures can help prevent a crisis in the microelectronics industry in the face of sanctions imposed against Russia.

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Chen, Yuan, e Xiao Wen Zhang. "Applications of Focused Ion Beam Technology in Bonding Failure Analysis for Microelectronic Devices". Applied Mechanics and Materials 58-60 (giugno 2011): 2171–76. http://dx.doi.org/10.4028/www.scientific.net/amm.58-60.2171.

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Focused ion beam (FIB) system is a powerful microfabrication tool which uses electronic lenses to focus the ion beam even up to nanometer level. The FIB technology has become one of the most necessary failure analysis and failure mechanism study tools for microelectronic device in the past several years. Bonding failure is one of the most common failure mechanisms for microelectronic devices. But because of the invisibility of the bonding interface, it is difficult to analyze this kind of failure. The paper introduced the basic principles of FIB technology. And two cases for microelectronic devices bonding failure were analyzed successfully by FIB technology in this paper.

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Min, K. H., e J. Mardinly. "Electron Tomography of Microelectronic Devices". Microscopy and Microanalysis 9, S02 (22 luglio 2003): 502–3. http://dx.doi.org/10.1017/s1431927603442517.

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Ekpu, M., R. Bhatti, M. I. Okereke e K. C. Otiaba. "Fatigue life analysis of Sn96.5Ag3.0Cu0.5 solder thermal interface material of a chip-heat sink assembly in microelectronic applications". International Symposium on Microelectronics 2013, n. 1 (1 gennaio 2013): 000473–77. http://dx.doi.org/10.4071/isom-2013-wa23.

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The reliability of microelectronic devices during operation has been a major challenge in recent years. Microelectronics devices will fail if one or more components do not function properly. Thermal interface materials are more likely to fail because of the role they play in heat management. Lead free solders such as SAC305 solder (Sn96.5Ag3.0Cu0.5) have become the thermal materials of interest because of their high thermal conductivity and government legislations on the ban of lead. Ansys finite element software was used for the design and analysis of the microelectronic device studied. The bond line thicknesses of the SAC305 solder thermal interface material were varied from 0.035 mm to 0.175 mm and a thermal load was applied using commercial thermal cycle profile of −40°C to 80°C. The results obtained showed that stresses and strains reduce as the lead free solder thickness increases. The number of cycles to failure and plastic work density increased as the SAC305 solder thickness is increased. This research showed that an increase in SAC305 solder thickness will improve thermal conduction and reliability. However, the solder thickness is limited to the gap between the chip-heat sink surfaces in contact.

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OSADCHUK, Iaroslav. "MICROELECTRONIC AUTOGENERATOR TEMPERATURE SENSORS". Herald of Khmelnytskyi National University. Technical sciences 317, n. 1 (23 febbraio 2023): 237–47. http://dx.doi.org/10.31891/2307-5732-2023-317-1-237-247.

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Microelectronic autogenerator temperature sensors based on transistor structures with differential negative resistance with primary parametric thermosensitive elements based on bipolar and field-effect transistors are proposed, moreover, primary parametric thermosensitive elements are active components of the circuits of parametric autogenerator temperature sensors, which greatly simplifies the design of the device. Based on the consideration of physical processes in primary parametric temperature-sensitive components and autogenerators of temperature sensors, mathematical models of autogenerator temperature sensors were developed, on the basis of which analytical expressions were obtained to determine the parametric dependences of sensitivity functions and transformation functions. It is shown that the main contribution to the conversion and sensitivity functions is made by a change in the ambient temperature, which causes a change in the equivalent capacitance and negative differential resistance of parametric autogenerator temperature sensors, which, accordingly, changes the output frequency of the device. The sensitivity of the sensor with a thermally sensitive bipolar transistor is from 11.25 kHz/°C to 21.5 kHz/°C, and the sensor with a thermally sensitive field-effect transistor is from 2.77 kHz /°C to 4.25 kHz/°C in the range of ambient temperature change 0 оС up to 100 оС. The obtained parametric dependences of the sensitivity and conversion functions show the possibility of easier calculation of the main characteristics of parametric autogenerator sensors, and also clearly demonstrate the influence of each component of parametric transducers and elements of parametric self-oscillating sensors on the output frequency of devices in comparison with the calculations of sensitivity and conversion functions from nonlinear equivalent circuits basis for solving the Kirchhoff equations.

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Криштоп, В. Г., Д. А. Жевненко, П. В. Дудкин, Е. С. Горнев, В. Г. Попов, С. С. Вергелес e Т. В. Криштоп. "ТЕХНОЛОГИЯ И ПРИМЕНЕНИЕ ЭЛЕКТРОХИМИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЕЙ". NANOINDUSTRY Russia 96, n. 3s (15 giugno 2020): 450–55. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.450.455.

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Электрохимические системы очень перспективны для разработки новой элементной базы для микроэлектроники и для использования в широком спектре инженерных задач. Мы разработали новую микроэлектронную технологию для изготовления электрохимических преобразователей (ЭХП) и новые приборы на основе новых электрохимических микроэлектронных чипов. Планарные электрохимические преобразователи могут использоваться в акселерометрах, сейсмических датчиках, датчиках вращения, гидрофонах и датчиках давления. Electrochemical systems are very promising for the development of a new element base for microelectronics, and for use in a wide range of engineering applications. We have developed a new microelectronic technology for manufacturing electrochemical transducers (ECP) and new devices based on new electrochemical microelectronic chips. Planar electrochemical transducers are used in accelerometers, seismic sensors, rotation sensors, hydrophones and pressure sensors.

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10

Northrop, D. C. "Book Review: Introduction to Microelectronic Devices". International Journal of Electrical Engineering & Education 27, n. 1 (gennaio 1990): 93. http://dx.doi.org/10.1177/002072099002700139.

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Baikerikar, K. K., e A. B. Scranton. "Photopolymerizable liquid encapsulants for microelectronic devices". Polymer 42, n. 2 (gennaio 2001): 431–41. http://dx.doi.org/10.1016/s0032-3861(00)00388-8.

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Osenbach, John W. "Corrosion-induced degradation of microelectronic devices". Semiconductor Science and Technology 11, n. 2 (1 febbraio 1996): 155–62. http://dx.doi.org/10.1088/0268-1242/11/2/002.

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13

Gorham, D. A. "Analysis of microelectronic materials and devices". Microelectronics Journal 24, n. 5 (agosto 1993): 594. http://dx.doi.org/10.1016/0026-2692(93)90143-3.

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14

Blackmore, G. W. "Analysis of Microelectronic Materials and Devices". Journal of Electroanalytical Chemistry 326, n. 1-2 (maggio 1992): 363–64. http://dx.doi.org/10.1016/0022-0728(92)80525-9.

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15

Tyler, Talmage, Olga A. Shenderova e Gary E. McGuire. "Vacuum microelectronic devices and vacuum requirements". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, n. 4 (luglio 2005): 1260–66. http://dx.doi.org/10.1116/1.1885019.

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16

Gray, H. F. "The physics of vacuum microelectronic devices". IEEE Transactions on Electron Devices 36, n. 11 (novembre 1989): 2599. http://dx.doi.org/10.1109/16.43690.

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Schreutelkamp, R. J. "Analysis of microelectronic materials and devices". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 72, n. 1 (ottobre 1992): 143. http://dx.doi.org/10.1016/0168-583x(92)95294-2.

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18

Adams, F. "Analysis of Microelectronic Materials and Devices". Analytica Chimica Acta 268, n. 1 (ottobre 1992): 189. http://dx.doi.org/10.1016/0003-2670(92)85264-7.

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Fowler, Michelle, Dongshun Bai, Curt Planje e Xie Shao. "High-Aspect Ratio Planarization using Self-Leveling Materials". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (1 gennaio 2012): 002567–86. http://dx.doi.org/10.4071/2012dpc-tha35.

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There are an increasing number of applications in the microelectronics industry that require materials that can fill and planarize high-aspect ratio topography. These applications call for the formation of a flat coating surface without the use of high bake temperatures or high-pressure processes. Potential device markets include MEMS, 3D-ICs, LEDs, semiconductors, flat panel displays and related microelectronic and optoelectronic devices. Various polymeric coating materials have been developed that have intrinsic self-leveling properties and are able to fill deep trenches and holes found on microelectronic substrates without forming voids. These new materials are able to reflow at modest baking temperatures (50–100 °C) and can fill high-aspect ratio features (10:1) by spin coating single or multiple layers of material over the topography. Several of these polymeric materials remain soluble in TMAH (and other aqueous bases), some are photosensitive, and all materials are compatible with industry-accepted solvents. Results from extended process development work on self-leveling polymeric materials will be discussed and comparisons made to industry-accepted practices.

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Azizov, Asadulla, Elnora Ametova e Feruza Shakirova. "Integrated microelectronic pulse shaper for automation and telemechanic systems in railway transport". E3S Web of Conferences 402 (2023): 03005. http://dx.doi.org/10.1051/e3sconf/202340203005.

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The significance of the production of the integrated microelectronic pulse shaper, which is used in railway automation and telemechanics systems, plays an important role in ensuring the safety of train traffic, and can completely replace track and pendulum transmitters, and the electrical circuits of the device are presented based on research and the principles of using microelectronic devices in the production process. It has been experimentally proven that the integrated microelectronic pulse shaper works without interfering with each other in the production of parallel codes. Values calculated on the basis of the Bayesian method of diagnosing the reliable operation of the device are presented. These values were verified in the experiment by connecting the device to the actual operating system at a real station.

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Hawker, Craig J., James L. Hedrick, Robert D. Miller e Willi Volksen. "Supramolecular Approaches to Nanoscale Dielectric Foams for Advanced Microelectronic Devices". MRS Bulletin 25, n. 4 (aprile 2000): 54–58. http://dx.doi.org/10.1557/mrs2000.30.

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The increasing demands of miniaturization in the microelectronics industry has forced continual improvement in the materials that are used in the fabrication of semiconductor devices. Advances in photoresists for microlithographic applications have reduced the feature size to 0.25 µm and below, and this drive to eversmaller features, coupled with the introduction of copper, has placed increasing demands on the dielectric material. Materials with lower dielectric constants (depicted in dark gray in Figure 1) are therefore required to more efficiently insulate these submicron features, such as the copper interconnect lines used to connect the transistors and memory cells in these advanced multilevel devices (Figure 1). This allows the minimization of crosstalk, signal delays, and power consumption. While vapor-deposited silicon dioxide and other derivatives are currently being employed, they suffer from unacceptably high dielectric constants (ε > 3.6) and are unacceptable for future generations of microelectronic devices.

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Liu, Shiqian, Keith Sweatman, Stuart McDonald e Kazuhiro Nogita. "Ga-Based Alloys in Microelectronic Interconnects: A Review". Materials 11, n. 8 (8 agosto 2018): 1384. http://dx.doi.org/10.3390/ma11081384.

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Gallium (Ga) and some of its alloys have a range of properties that make them an attractive option for microelectronic interconnects, including low melting point, non-toxicity, and the ability to wet without fluxing most materials—including oxides—found in microelectronics. Some of these properties result from their ability to form stable high melting temperature solid solutions and intermetallic compounds with other metals, such as copper, nickel, and aluminium. Ga and Ga-based alloys have already received significant attention in the scientific literature given their potential for use in the liquid state. Their potential for enabling the miniaturisation and deformability of microelectronic devices has also been demonstrated. The low process temperatures, made possible by their low melting points, produce significant energy savings. However, there are still some issues that need to be addressed before their potential can be fully realised. Characterising Ga and Ga-based alloys, and their reactions with materials commonly used in the microelectronic industry, are thus a priority for the electronics industry. This review provides a summary of research related to the applications and characterisation of Ga-based alloys. If the potential of Ga-based alloys for low temperature bonding in microelectronics manufacturing is to be realised, more work needs to be done on their interactions with the wide range of substrate materials now being used in electronic circuitry.

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Ahmed, Wase U. "Metallography of Microelectronic Devices / Metallographie mikroelektronischer Bauteile". Practical Metallography 39, n. 8 (1 agosto 2002): 437–48. http://dx.doi.org/10.1515/pm-2002-390807.

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Ruhl, Guenther, Sebastian Wittmann, Matthias Koenig e Daniel Neumaier. "The integration of graphene into microelectronic devices". Beilstein Journal of Nanotechnology 8 (15 maggio 2017): 1056–64. http://dx.doi.org/10.3762/bjnano.8.107.

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Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.

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Larson, D. J., D. Lawrence, W. Lefebvre, D. Olson, T. J. Prosa, D. A. Reinhard, R. M. Ulfig et al. "Toward atom probe tomography of microelectronic devices". Journal of Physics: Conference Series 326 (9 novembre 2011): 012030. http://dx.doi.org/10.1088/1742-6596/326/1/012030.

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Mecklenburg, Matthew, William A. Hubbard, E. R. White, Rohan Dhall, Stephen B. Cronin, Shaul Aloni e B. C. Regan. "Nanoscale temperature mapping in operating microelectronic devices". Science 347, n. 6222 (5 febbraio 2015): 629–32. http://dx.doi.org/10.1126/science.aaa2433.

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Modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope and electron energy loss spectroscopy, we quantified the local density via the energy of aluminum’s bulk plasmon. Rescaling density to temperature yields maps with a statistical precision of 3 kelvin/hertz−1/2, an accuracy of 10%, and nanometer-scale resolution. Many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.

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Chin, K. Ken, e R. B. Marcus. "Field emitter tips for vacuum microelectronic devices". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, n. 4 (luglio 1990): 3586–90. http://dx.doi.org/10.1116/1.576511.

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Würfl, Joachim, Vera Abrosimova, Jochen Hilsenbeck, Erich Nebauer, Walter Rieger e Günther Tränkle. "Reliability considerations of III-nitride microelectronic devices". Microelectronics Reliability 39, n. 12 (dicembre 1999): 1737–57. http://dx.doi.org/10.1016/s0026-2714(99)00181-x.

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Berbezier, I., e A. Ronda. "Si/SiGe heterostructures for advanced microelectronic devices". Phase Transitions 81, n. 7-8 (luglio 2008): 751–72. http://dx.doi.org/10.1080/01411590802130576.

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Liechti, K. M. "Residual stresses in plastically encapsulated microelectronic devices". Experimental Mechanics 25, n. 3 (settembre 1985): 226–31. http://dx.doi.org/10.1007/bf02325091.

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Hersee, S. D., L. Yang, M. Kao, P. Martin, J. Mazurowski, A. Chin e J. Ballingall. "MOMBE GaAs and AlGaAs for microelectronic devices". Journal of Crystal Growth 120, n. 1-4 (maggio 1992): 218–27. http://dx.doi.org/10.1016/0022-0248(92)90394-x.

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Mizoguchi, Katsuhiro, e Etsuo Hasegawa. "Photoactive Polymers Applied to Advanced Microelectronic Devices". Polymers for Advanced Technologies 7, n. 5-6 (maggio 1996): 471–77. http://dx.doi.org/10.1002/(sici)1099-1581(199605)7:5/6<471::aid-pat534>3.0.co;2-r.

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Wietrzak, A., e D. Poulikakos. "Turbulent forced convective cooling of microelectronic devices". International Journal of Heat and Fluid Flow 11, n. 2 (giugno 1990): 105–13. http://dx.doi.org/10.1016/0142-727x(90)90003-t.

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Karnaushenko, Daniil, Tong Kang, Vineeth K. Bandari, Feng Zhu e Oliver G. Schmidt. "3D Microelectronics: 3D Self‐Assembled Microelectronic Devices: Concepts, Materials, Applications (Adv. Mater. 15/2020)". Advanced Materials 32, n. 15 (aprile 2020): 2070120. http://dx.doi.org/10.1002/adma.202070120.

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Yang, Qing, John Mardinly, Christian Kübel, Chris Nelson e Christian Kisielowski. "Electron tomography of microelectronic device interconnects". International Journal of Materials Research 97, n. 7 (1 luglio 2006): 880–84. http://dx.doi.org/10.1515/ijmr-2006-0142.

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Abstract As the dimensions of microelectronic devices continue to decrease, single transmission electron microscopy images are not able to properly represent the 3D structures when the structure’s curvature is comparable to the sample thickness. Electron tomography was used to study cylindrical vias coated with Ta-barrier layers and Cu-seed layers in 3D. Tomography reconstructions from both bright field images and high angle annular dark field images are presented. Fidelity of the reconstruction from single-axis and dual-axis tilt series is compared. Strategies for improving the fidelity of the reconstruction and making electron tomography practically applicable for device failure analysis of microelectronic industry are discussed.

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Wong Mian Sheng, Abdulhafid M Elfaghi e Lukmon Owolabi Afolabi. "Numerical Study on Heat Propagation in Laptop Cooling System". Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 99, n. 1 (17 ottobre 2022): 58–65. http://dx.doi.org/10.37934/arfmts.99.1.5865.

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Thermal management of microelectronic devices has become increasingly important to maintain their performance and prolonging the lifespan of the devices. In this study, numerical simulation has been conducted to investigate the heat propagation for high performance microelectronic device of laptop. Two models are constructed and Ansys Fluent is used for the Computational Fluid Dynamics (CFD) simulation, source term is applied at the heat source, heat sink and two different material heat pipes are the main cooling components in the system. The results show that the improved design model is a better design for laptop cooling systems, and the increasing number of air vents, thermal conductivity, and length of heat pipes can effectively cool the high-powered microchip effectively. Transient simulation, considering the wick structure and working fluid in the simulation, is suggested for future work.

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Wang, Guang Yin. "Investigation Progress on Microelectronic Materials: Carbon Nanotube and Graphene". Advanced Materials Research 531 (giugno 2012): 165–67. http://dx.doi.org/10.4028/www.scientific.net/amr.531.165.

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In this paper, the structures and electrical properties of carbon nanotube and graphene were introduced, which have advantage in making microelectronic materials. The achievements and methods in construction of microelectronic devices were also discussed. In the last, how to make carbon nanotube and graphene were elaborated.

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Gavrysh, V. I. "Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices". Semiconductor Physics Quantum Electronics and Optoelectronics 14, n. 4 (5 dicembre 2011): 478–81. http://dx.doi.org/10.15407/spqeo14.04.478.

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Moon, F. C. "Mechanics of Electronic and Electromechanical Devices". Applied Mechanics Reviews 38, n. 10 (1 ottobre 1985): 1294–96. http://dx.doi.org/10.1115/1.3143696.

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Problems involving the interaction of electromagnetic material effects and forces with stresses, deformations, and dynamics span a wide spectrum from thermal strain problems in microelectronic chips to stresses in large superconducting magnets for fusion reactors, NMR scanners, and levitated trains. An important class of problems that merits increased research effort are the mechanics problems associated with transducers or sensors based on ferroelectric, ferromagnetic, semiconductor, or microelectronic materials. Another area which may have technological payoff is that of electromechanical actuators. Further work is also required on numerical methods for calculating electromagnetic fields, forces, torques, and currents in order to allow engineers to better design and optimize electromagnetic devices. Interaction of laser radiation and high energy particles with solids is another area for new research. Progress in this field has not been steady. The interdisciplinary nature of these problems has meant that the field has no natural home for funding. This will present a problem for future progress in this field.

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Ruggles, T. J. "Local Stress Measurements in Microelectronic Devices Using HREBSD". Microscopy and Microanalysis 28, S1 (22 luglio 2022): 578–79. http://dx.doi.org/10.1017/s1431927622002896.

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Liang, Cai, e Pierino Zappella. "Advanced Packaging Solution to Hermetically Packaging Microelectronic Devices". IEEE Transactions on Components, Packaging and Manufacturing Technology 11, n. 7 (luglio 2021): 1055–62. http://dx.doi.org/10.1109/tcpmt.2021.3091593.

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W., TAZBIT, e MIALHE P. "RELIABILITY OF MICROELECTRONIC DEVICES FROM EMITTERBASE JUNCTION CHARACTERIZATION". International Conference on Applied Mechanics and Mechanical Engineering 13, n. 13 (1 maggio 2008): 29–37. http://dx.doi.org/10.21608/amme.2008.39820.

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Cruz Duarte, Jorge Mario, Iván Mauricio Amaya Contreras e Carlos Rodrigo Correa Cely. "COOLING MICROELECTRONIC DEVICES USING OPTIMAL MICROCHANNEL HEAT SINKS". Revista EIA 12, n. 24 (30 novembre 2015): 151–66. http://dx.doi.org/10.24050/reia.v12i24.880.

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This article deals with the design of optimum microchannel heat sinks through Unified Particle Swarm Optimisation (UPSO) and Harmony Search (HS). These heat sinks are used for the thermal management of electronic devices, and we analyse the performance of UPSO and HS in their design, both, systematically and thoroughly. The objective function was created using the entropy generation minimisation criterion. In this study, we fixed the geometry of the microchannel, the amount of heat to be removed, and the properties of the cooling fluid. Moreover, we calculated the entropy generation rate, the volume flow rate of air, the channel width, the channel height, and the Knudsen number. The results of several simulation optimizations indicate that both global optimisation strategies yielded similar results, about 0.032 W/K, and that HS required five times more iterations than UPSO, but only about a nineteenth of its computation time. In addition, HS revealed a greater chance (about three times) of finding a better solution than UPSO, but with a higher dispersion rate (about five times). Nonetheless, both algorithms successfully optimised the design for different scenarios, even when varying the material of the heat sink, and for different heat transfer rates.

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Bonera, Emiliano, Marco Fanciulli e Marcello Mariani. "Raman spectroscopy of strain in subwavelength microelectronic devices". Applied Physics Letters 87, n. 11 (12 settembre 2005): 111913. http://dx.doi.org/10.1063/1.2045545.

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45

Owen, G. "Electron lithography for the fabrication of microelectronic devices". Reports on Progress in Physics 48, n. 6 (1 giugno 1985): 795–851. http://dx.doi.org/10.1088/0034-4885/48/6/002.

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46

Scott, J. F., C. A. Paz de Araujo, L. D. McMillan, H. Yoshimori, H. Watanabe, T. Mihara, M. Azuma et al. "TdI10: Ferroelectric thin films in integrated microelectronic devices". Ferroelectrics 133, n. 1 (agosto 1992): 47–60. http://dx.doi.org/10.1080/00150199208217976.

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Jung, Yei Hwan, Huilong Zhang, Sang June Cho e Zhenqiang Ma. "Flexible and Stretchable Microwave Microelectronic Devices and Circuits". IEEE Transactions on Electron Devices 64, n. 5 (maggio 2017): 1881–93. http://dx.doi.org/10.1109/ted.2016.2646361.

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48

Grasserbauer, M., G. Stingeder, H. Pötzl e E. Guerrero. "Analytical science for the development of microelectronic devices". Fresenius' Zeitschrift für analytische Chemie 323, n. 5 (gennaio 1986): 421–49. http://dx.doi.org/10.1007/bf00470757.

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49

McCracken, Michael, Michael Mayer, Isaac Jourard, Jeong-Tak Moon e John Persic. "Symmetric miniaturized heating system for active microelectronic devices". Review of Scientific Instruments 81, n. 7 (luglio 2010): 075112. http://dx.doi.org/10.1063/1.3469794.

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Sudarshan, T. S., Xianyun Ma e P. G. Muzykov. "High field insulation relevant to vacuum microelectronic devices". IEEE Transactions on Dielectrics and Electrical Insulation 9, n. 2 (aprile 2002): 216–25. http://dx.doi.org/10.1109/94.993738.

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