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Letteratura scientifica selezionata sul tema "Microelectronic devices"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 7 settembre 2023

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Articoli di riviste sul tema "Microelectronic devices"

Brodie, I., e P. R. Schwoebel. "Vacuum microelectronic devices". Proceedings of the IEEE 82, n. 7 (luglio 1994): 1006–34. http://dx.doi.org/10.1109/5.293159.

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von Windheim, Tasso, Kristin H. Gilchrist, Charles B. Parker, Stephen Hall, James B. Carlson, David Stokes, Nicholas G. Baldasaro et al. "Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters". Micromachines 14, n. 5 (29 aprile 2023): 973. http://dx.doi.org/10.3390/mi14050973.

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This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10−9 S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments.

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Srivastava, V. "THz vacuum microelectronic devices". Journal of Physics: Conference Series 114 (1 maggio 2008): 012015. http://dx.doi.org/10.1088/1742-6596/114/1/012015.

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MANUSHIN, Dmitrii V., Guzel' R. TAISHEVA e Shamil' I. ENIKEEV. "Russian microelectronics: Current state-of-the-art, logistics, management issues, crisis response measures". National Interests: Priorities and Security 19, n. 5 (16 maggio 2023): 808–42. http://dx.doi.org/10.24891/ni.19.5.808.

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Subject. This article discusses the prospects for the development of Russian microelectronics and import substitution issues. Objectives. The article aims to develop measures to support Russian developers of microelectronic devices. Methods. For the study, we used the abstract-logical, computational-constructive, and case study methods. Results. The article proposes certain measures to support the microelectronics industry in Russia. Conclusions. The proposed measures can help prevent a crisis in the microelectronics industry in the face of sanctions imposed against Russia.

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Chen, Yuan, e Xiao Wen Zhang. "Applications of Focused Ion Beam Technology in Bonding Failure Analysis for Microelectronic Devices". Applied Mechanics and Materials 58-60 (giugno 2011): 2171–76. http://dx.doi.org/10.4028/www.scientific.net/amm.58-60.2171.

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Focused ion beam (FIB) system is a powerful microfabrication tool which uses electronic lenses to focus the ion beam even up to nanometer level. The FIB technology has become one of the most necessary failure analysis and failure mechanism study tools for microelectronic device in the past several years. Bonding failure is one of the most common failure mechanisms for microelectronic devices. But because of the invisibility of the bonding interface, it is difficult to analyze this kind of failure. The paper introduced the basic principles of FIB technology. And two cases for microelectronic devices bonding failure were analyzed successfully by FIB technology in this paper.

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Min, K. H., e J. Mardinly. "Electron Tomography of Microelectronic Devices". Microscopy and Microanalysis 9, S02 (22 luglio 2003): 502–3. http://dx.doi.org/10.1017/s1431927603442517.

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Ekpu, M., R. Bhatti, M. I. Okereke e K. C. Otiaba. "Fatigue life analysis of Sn96.5Ag3.0Cu0.5 solder thermal interface material of a chip-heat sink assembly in microelectronic applications". International Symposium on Microelectronics 2013, n. 1 (1 gennaio 2013): 000473–77. http://dx.doi.org/10.4071/isom-2013-wa23.

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The reliability of microelectronic devices during operation has been a major challenge in recent years. Microelectronics devices will fail if one or more components do not function properly. Thermal interface materials are more likely to fail because of the role they play in heat management. Lead free solders such as SAC305 solder (Sn96.5Ag3.0Cu0.5) have become the thermal materials of interest because of their high thermal conductivity and government legislations on the ban of lead. Ansys finite element software was used for the design and analysis of the microelectronic device studied. The bond line thicknesses of the SAC305 solder thermal interface material were varied from 0.035 mm to 0.175 mm and a thermal load was applied using commercial thermal cycle profile of −40°C to 80°C. The results obtained showed that stresses and strains reduce as the lead free solder thickness increases. The number of cycles to failure and plastic work density increased as the SAC305 solder thickness is increased. This research showed that an increase in SAC305 solder thickness will improve thermal conduction and reliability. However, the solder thickness is limited to the gap between the chip-heat sink surfaces in contact.

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OSADCHUK, Iaroslav. "MICROELECTRONIC AUTOGENERATOR TEMPERATURE SENSORS". Herald of Khmelnytskyi National University. Technical sciences 317, n. 1 (23 febbraio 2023): 237–47. http://dx.doi.org/10.31891/2307-5732-2023-317-1-237-247.

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Microelectronic autogenerator temperature sensors based on transistor structures with differential negative resistance with primary parametric thermosensitive elements based on bipolar and field-effect transistors are proposed, moreover, primary parametric thermosensitive elements are active components of the circuits of parametric autogenerator temperature sensors, which greatly simplifies the design of the device. Based on the consideration of physical processes in primary parametric temperature-sensitive components and autogenerators of temperature sensors, mathematical models of autogenerator temperature sensors were developed, on the basis of which analytical expressions were obtained to determine the parametric dependences of sensitivity functions and transformation functions. It is shown that the main contribution to the conversion and sensitivity functions is made by a change in the ambient temperature, which causes a change in the equivalent capacitance and negative differential resistance of parametric autogenerator temperature sensors, which, accordingly, changes the output frequency of the device. The sensitivity of the sensor with a thermally sensitive bipolar transistor is from 11.25 kHz/°C to 21.5 kHz/°C, and the sensor with a thermally sensitive field-effect transistor is from 2.77 kHz /°C to 4.25 kHz/°C in the range of ambient temperature change 0 оС up to 100 оС. The obtained parametric dependences of the sensitivity and conversion functions show the possibility of easier calculation of the main characteristics of parametric autogenerator sensors, and also clearly demonstrate the influence of each component of parametric transducers and elements of parametric self-oscillating sensors on the output frequency of devices in comparison with the calculations of sensitivity and conversion functions from nonlinear equivalent circuits basis for solving the Kirchhoff equations.

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Криштоп, В. Г., Д. А. Жевненко, П. В. Дудкин, Е. С. Горнев, В. Г. Попов, С. С. Вергелес e Т. В. Криштоп. "ТЕХНОЛОГИЯ И ПРИМЕНЕНИЕ ЭЛЕКТРОХИМИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЕЙ". NANOINDUSTRY Russia 96, n. 3s (15 giugno 2020): 450–55. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.450.455.

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Электрохимические системы очень перспективны для разработки новой элементной базы для микроэлектроники и для использования в широком спектре инженерных задач. Мы разработали новую микроэлектронную технологию для изготовления электрохимических преобразователей (ЭХП) и новые приборы на основе новых электрохимических микроэлектронных чипов. Планарные электрохимические преобразователи могут использоваться в акселерометрах, сейсмических датчиках, датчиках вращения, гидрофонах и датчиках давления. Electrochemical systems are very promising for the development of a new element base for microelectronics, and for use in a wide range of engineering applications. We have developed a new microelectronic technology for manufacturing electrochemical transducers (ECP) and new devices based on new electrochemical microelectronic chips. Planar electrochemical transducers are used in accelerometers, seismic sensors, rotation sensors, hydrophones and pressure sensors.

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Northrop, D. C. "Book Review: Introduction to Microelectronic Devices". International Journal of Electrical Engineering & Education 27, n. 1 (gennaio 1990): 93. http://dx.doi.org/10.1177/002072099002700139.

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Tesi sul tema "Microelectronic devices"

Al-Amin, Chowdhury G. "Advanced Graphene Microelectronic Devices". FIU Digital Commons, 2016. http://digitalcommons.fiu.edu/etd/2512.

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The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap precludes its application in digital and logic devices. With its remarkably high electron mobility at room temperature, Graphene also has strong potential for terahertz (THz) plasmonic devices. However there still are challenges to be solved to realize Graphene’s full potential for practical applications. In this dissertation, we investigate solutions for some of these challenges. First, to reduce the access resistances which significantly reduces the radio frequency (RF) performance of Graphene field effect transistors (GFETs), a novel device structure consisting of two additional contacts at the access region has been successfully modeled, designed, microfabicated/integrated, and characterized. The additional contacts of the proposed device are capacitively coupled to the device channel and independently biased, that induce more carriers and effectively reduce access resistance. In addition to that, in this dissertation, bandgap has been experimentally introduced to semi-metallic Graphene, by decorating with randomly distributed gold nano-particles and zinc oxide (ZnO) nano-seeds, where their interaction breaks its sublattice symmetry and opens up bandgap. The engineered bandgap was extracted from its temperature dependent conductivity characteristics and compared with reported theoretical estimation. The proposed method of device engineering combined with material bandgap engineering, on a single device, introduces a gateway towards high speed Graphene logic devices. Finally, THz plasmon generation and propagation in Graphene grating gate field effect transistors and Graphene plasmonic ring resonators have been investigated analytically and numerically to explore their potential use for compact, solid state tunable THz detectors.

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Burrows, Susan Elizabeth. "Silicone encapsulants for microelectronic devices". Thesis, University of Warwick, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319702.

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Ramon, i. Garcia Eloi. "Inkjet printed microelectronic devices and circuits". Doctoral thesis, Universitat Autònoma de Barcelona, 2014. http://hdl.handle.net/10803/285078.

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En els darrers anys ha anat creixent l’interès per la fabricació de sistemes de baix cost, flexibles i sobre gran àrea com, per exemple, les etiquetes RFID per a identificació de productes, les pantalles flexibles o les etiquetes intel•ligents entre d’altres. La tecnologia d’impressió electrònica (Printed Electronics) s’ha posicionat com una de les tecnologies alternatives de fabricació més prometedores pel fet de no utilitzar tècniques fotolitogràfiques i de buit. Alhora, la millora en materials orgànics i inorgànics ha provocat un increment en les prestacions dels dispositius impresos. Tot i això, la fabricació de transistors orgànics, element clau per a construir circuits electrònics d’adquisició o processament, es veu afectada per la poca resolució i registre entre capes de les tecnologies d’impressió actuals com inkjet o gravat. Per compensar-ho, els transistors implementats utilitzant aquestes tecnologies tenen llargades de canal molt grans i grans solapaments entre porta i font/drenador. Aquestes grans dimensions limiten les prestacions dels transistors impresos, tot i les millores obtingudes en els materials. Aquesta tesi està enfocada en contrarestar els problemes provocats per la poca resolució en impressió utilitzant tècniques de compensació i noves geometries de dispositius mantenint el procés completament inkjet. Aquest treball s’enfoca en el desenvolupament de dispositius microelectrònics passius i actius implementats amb maquinària inkjet de baix cost. He enfocat el meu esforç en el disseny, la fabricació i la caracterització (elèctrica i morfològica) amb l’objectiu de fer possible la fabricació de circuits integrats orgànics. En el marc de la tesi, s’han fabricat varis milers de transistors, capacitats i resistències exclusivament amb tecnologia inkjet. Tots els dispositius s’han caracteritzat tant elèctrica com morfològicament. S’ha dut a terme un gran número d’experiments per assegurar una fabricació eficient, estudiar la variabilitat dels paràmetres i obtenir dades estadísticament significatives. La variació en els processos de fabricació de transistors porta a una important variabilitat en els paràmetres dels dispositius impresos fins ara poc estudiada. Escalabilitat, variabilitat i rendiment s’han analitzat utilitzant diferents estratègies. S’han obtingut circuits digitals amb un comportament adient, demostrant l’estat actual de la tecnologia inkjet per a integrar dispositius impresos en circuits. Aquest és un primer pas en el camí per fabricar circuits més complexes amb tecnologia d’impressió inkjet. La quantitat de mostres fabricades amb tecnologia inkjet es pot considerar com un assoliment important i contribueix a millorar el coneixement del comportament i els orígens de fallades dels dispositius orgànics i impresos.
In the last years there has been a growing interest in the realization of low-cost, flexible and large area electronic systems such as item-level RFID tags, flexible displays or smart labels, among others. Printed Electronics has emerged as one of the most promising alternative manufacturing technologies due to its lithography- and vacuum-free processing. Related to this, organic and inorganic solution processed materials advanced rapidly improving the performance of printed devices. However, the fabrication of organic transistors, key element to build circuits for acquisition and processing, suffers from the poor resolution and layer-to-layer registration of current printing techniques such as inkjet and gravure printing. To compensate that transistors implemented in those technologies have large channel lengths and large gate to source/drain overlaps. These large dimensions limit the performance of the printed transistors, despite the improvements in materials. This thesis focuses on circumventing the printing resolution challenges using compensation techniques and new layout geometries while keeping an all-inkjet purely printing process. The dissertation deals with the development of microelectronic passive and active devices implemented using low-cost inkjet printing machinery. I focussed my effort in the design, manufacturing & characterization (electrical and morphological) points of view in order to allow the fabrication of organic integrated circuits. Several thousands of resistors, capacitors and transistors were fabricated, all of them fully inkjet-printed. All devices were morphologically and electrically characterized. A high number of experiments were developed to ensure efficient manufacturing and report on parameter variation, thus obtaining statistically significant data. Process variations present in transistor fabrication lead to a certain variability on the resulting transistor parameters that need to be taken in account. Scalability, variability and yield were analysed by using different strategies. Fabricated inverters show a clear inversion behaviour demonstrating the state of the inkjet fabrication process to integrate printed devices in circuits. This is a first step in the way to fabricate all-inkjet complex circuits. The amount of samples manufactured by the fully inkjet printing approach can be considered an outstanding achievement and contributes to a better knowledge of the behaviour and failure origins of organic and printed devices.

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Solis, Adrian (Adrian Orbita). "MIT Device Simulation WebLab : an online simulator for microelectronic devices". Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/33364.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2005.
Includes bibliographical references (p. 149-157).
In the field of microelectronics, a device simulator is an important engineering tool with tremendous educational value. With a device simulator, a student can examine the characteristics of a microelectronic device described by a particular model. This makes it easier to develop an intuition for the general behavior of that device and examine the impact of particular device parameters on device characteristics. In this thesis, we designed and implemented the MIT Device Simulation WebLab ("WeblabSim"), an online simulator for exploring the behavior of microelectronic devices. WeblabSim makes a device simulator readily available to users on the web anywhere, and at any time. Through a Java applet interface, a user connected to the Internet specifies and submits a simulation to the system. A program performs the simulation on a computer that can be located anywhere else on the Internet. The results are then sent back to the user's applet for graphing and further analysis. The WeblabSim system uses a three-tier design based on the iLab Batched Experiment Architecture. It consists of a client applet that lets users configure simulations, a laboratory server that runs them, and a generic service broker that mediates between the two through SOAP-based web services. We have implemented a graphical client applet, based on the client used by the MIT Microelectronics WebLab.
(cont.) Our laboratory server has a distributed, modular design consisting of a data store, several worker servers that run simulations, and a master server that acts as a coordinator. On this system, we have successfully deployed WinSpice, a circuit simulator based on Berkeley Spice3F4. Our initial experiences with WeblabSim indicate that it is feature-complete, reliable and efficient. We are satisfied that it is ready for beta deployment in a classroom setting, which we hope to do in Fall 2004.
by Adrian Solis.
M.Eng.

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Reska, Anna. "Interfacing insect neuronal neutworks with microelectronic devices". Jülich Forschungszentrum, Zentralbibliothek, 2009. http://d-nb.info/1000321983/34.

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Sanderson, Lisa. "Nanoscale strain characterisation of modern microelectronic devices". Thesis, University of Newcastle upon Tyne, 2012. http://hdl.handle.net/10443/1541.

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Sources of stress and strain in modern microelectronics can be either beneficial to the electrical performance or detrimental to the mechanical integrity and ultimately lifetime of the device. Strain engineering is commonplace in state-of-the-art device fabrication as a means to boost performance in the face of device scaling limitation. The strain present in the device is directly related to the improvement factor and as such precise measurements and good understanding are of utmost importance due to the many thermal processing steps that can induce or cause relaxation of the strain. Front-end-of-line (FEOL) strain characterisation is becoming increasingly challenging due to the small volumes of material and nanoscale feature sizes being analysed. In this work, an extensive survey of strain characterisation techniques was undertaken. Narrow sSOI stripes were profiled using conventional Raman spectroscopy. Unlike with previous studies, it was shown that it is possible to achieve nanoscale measurements using current techniques. This study was supported by ANSYS FE simulation. The review of the literature briefly investigates the possibility of EBSD as a strain measurement tool. It is possible to calculate not just an absolute strain value as achievable with Raman spectroscopy, but the strain tensor. However, this is a difficult and complex process and not necessary for use in industry. This study proposes the possibility of a more simple method that would provide a good calibration technique to confirm Raman measurements. SERS and TERS are explored in detail as the most promising techniques when dealing with device scaling. Currently, SERS is a destructive technique not suitable for use in a highly cost driven industry such as semiconductor manufacturing. While it theoretically gives improved surface selectivity over conventional Raman spectroscopy, there is no improvement to the xy spatial resolution. With Si and SiGe samples, this study concludes there is also often no surface selectivity with either technique and the mechanisms behind the enhancement are not understood to the point of being able to implement the techniques in a process line. However, where a non-destructive technique is desired, outlined in this study is a method of achieving the SERS effect without sacrificing the sample. Aggressive scaling has forced the dimensions of the interconnecting wires that give the devices functionality to the deep submicron range. Copper, Cu has been introduced as a replacement to the traditionally used aluminium, Al because of its superior electrical and mechanical properties and scalability. However, as these wires begin to approach the dimensions of thin foils, the microtexture of the wires becomes significantly different from their bulk counterparts. This can affect the mechanical integrity of the interconnects and this has an impact on the reliability of the device. Failure mechanisms such as blistering, cracking and peeling caused by stress and strain are not uncommon and traditional methods of characterising residual stress in the thin films is no longer applicable to these narrow wires. The mechanical properties and microtexture of thin copper films annealed at temperatures comparative to those found in device manufacturing were characterised in some detail. EBSD was used to determine the grain size and structure of the films before nanoindentation confirmed properties such as hardness and elastic modulus. These results pave the way for investigation of strain applied along deep-submicron interconnects to lead to further understanding of what causes failure mechanisms from interconnecting wires.

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Limpaphayom, Koranan. "Microelectronic circuits for noninvasive ear type assistive devices". College Park, Md.: University of Maryland, 2009. http://hdl.handle.net/1903/9887.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2009.
Thesis research directed by: Reliability Engineering Program. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices". Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five experimental studies aimed at either directly exploring the properties of the above three interaction phenomena or the development of novel device structures that exploit the strong particle-particle interactions found in p-GaAs for the study of many body phenomena. Firstly, we demonstrate a novel semiconductor-insulator-semiconductor field effect transistor (SISFET), designed specifically to induced 2D hole systems at a ????normal???? AlGaAs-on-GaAs heterojunction. The novel SISFETs feature in our studies of the metallic behavior in 2D systems in which we examine temperature corrections to ????xx(T) and ????xy(T) in short- and long-range disorder potentials. Next, we shift focus to bilayer hole systems and the many body quantum Hall states that form a nu = 1 in the presence of strong interlayer interactions. We explore the evolution of this quantum Hall state as the relative densities in the layers is imbalanced while the total density is kept constant. Finally, we demonstrate a novel p-type quantum point contact device that produce the most stable and robust current quantization in a p-type 1D systems to date, allowing us to observed for the first time the 0.7 structure in a p-type device.

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Heng, Stephen Fook-Geow. "Experimental and theoretical thermal analysis of microelectronic devices". Diss., Georgia Institute of Technology, 1988. http://hdl.handle.net/1853/16694.

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Thongpang, Sanitta. "Vacuum field emission microelectronic devices based on silicon nanowhiskers". Thesis, University of Canterbury. Electrical and Computer Engineering, 2007. http://hdl.handle.net/10092/1141.

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Vacuum field emission devices have become a promising candidate for emerging display technology due to their interesting properties compared to conventional thermionic emission devices that require high temperature and power to operate. Unlike thermionic emission, field emission devices can induce the electrons to emit at low temperature; sharp and thin emitters on the cathode are desired in order to increase the field emission. Many candidates from other research groups, such as Carbon Nanotubes (CNTs), SiC and ZnO, appear to have high field emission, but their complicated fabrication processes are the drawback. The silicon nanowhiskers produced by Geological & Nuclear Sciences (GNS) using Electron-Beam Rapid Thermal Annealing (EB-RTA) are an alternative material that is fast, inexpensive and uncomplicated to produce. They are based on the thermal desorption of silicon oxide, which forms silicon nanowhiskers on the silicon wafer in a short duration. Field emission diode structures on Silicon on Insulator (SOI) wafers were fabricated in order to investigate the field emission due to these GNS silicon nanowhiskers. An uncomplicated fabrication process using photolithography and etching process was developed. Electron beam lithography (EBL) was also used to create the different feature sizes directly onto the SOI wafer. The silicon nanowhiskers grown on these structures are as high as 35 nm with density distribution up to 30 µm⁻¹. The electrical characteristics of these devices are diode-like when the voltage range from -40 V to 40 V is applied. The best samples produced an emitted current as high as 2 mA, which is suitable for many applications, such as flat panel displays, x-ray sources and high frequency devices. However, in some cases, the diode structures failed to show the diode-like characteristics, perhaps as a result of bad contact connections or the emitters have been worn out after applying high voltage for some time. Device life time and stability were also considered and investigated via a number of electrical measurements for a period of time as long as one hour in this study. Even though these nanowhiskers have shown promising results, there are still many aspects to be considered to improve the experiments, such as the vacuum system and better contacts.

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Più fonti

Libri sul tema "Microelectronic devices"

Yang, Edward S. Microelectronic devices. New York: McGraw-Hill, 1988.

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Yang, Edward S. Microelectronic devices. New York: McGraw-Hill, 1988.

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Microelectronic devices. 2^a ed. London: Imperial College Press, 1997.

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Leaver, K. D. Microelectronic devices. Harlow, Essex, England: Longman Scientific & Technical, 1989.

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Fonstad, Clifton G. Microelectronic devices and circuits. New York: McGraw-Hill, 1994.

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Microelectronic circuits and devices. 2^a ed. London: Prentice Hall International, 1996.

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Fonstad, Clifton. Microelectronic devices and circuits. Maidenhead: McGraw-Hill, 1994.

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Microelectronic circuits and devices. 2^a ed. Englewood Cliffs, N.J: Prentice Hall, 1996.

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1956-, Tarr N. Garry, a cura di. Introduction to microelectronic devices. Englewood Cliffs, N.J: Prentice Hall, 1989.

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Pulfrey, David L. Introduction to microelectronic devices. Englewood Cliffs, N.J: Prentice-Hall International, 1989.

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Capitoli di libri sul tema "Microelectronic devices"

Gardner, Julian W., Vijay K. Varadan e Osama O. Awadelkarim. "Standard Microelectronic Technologies". In Microsensors, MEMS, and Smart Devices, 61–116. West Sussex, England: John Wiley & Sons, Ltd,., 2013. http://dx.doi.org/10.1002/9780470846087.ch4.

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Föll, H., e B. Wild. "Polysilicon Layers in Modern Microelectronic Devices". In Springer Proceedings in Physics, 274–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_39.

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Wang, Biao. "Dielectric Breakdown of Microelectronic and Nanoelectronic Devices". In Advanced Topics in Science and Technology in China, 443–524. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-33596-9_9.

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Lebedev, A. A., e V. E. Chelnokov. "Future Trends in SiC-Based Microelectronic Devices". In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, 431–45. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_33.

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Nair, Anju K., Paulose Thomas, Kala M. S e Nandakumar Kalarikkal. "Carbon Nanotubes for Nanoelectronics and Microelectronic Devices". In Handbook of Carbon Nanotubes, 1533–55. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-91346-5_33.

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Nair, Anju K., Paulose Thomas, Kala M. S e Nandakumar Kalarikkal. "Carbon Nanotubes for Nanoelectronics and Microelectronic Devices". In Handbook of Carbon Nanotubes, 1–23. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-319-70614-6_33-1.

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Siah, L. F. "Moisture-Driven Electromigrative Degradation in Microelectronic Packages". In Moisture Sensitivity of Plastic Packages of IC Devices, 503–22. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-5719-1_20.

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Ruybalid, A. P., J. P. M. Hoefnagels, O. van der Sluis e M. G. D. Geers. "Full-Field Identification of Interfaces in Microelectronic Devices". In Micro and Nanomechanics, Volume 5, 9–13. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-42228-2_2.

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Di Paolo Emilio, Maurizio. "Low-Power Solutions for Biomedical/Mobile Devices". In Microelectronic Circuit Design for Energy Harvesting Systems, 143–54. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47587-5_10.

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Kinjo, Noriyuki, Masatsugu Ogata, Kunihiko Nishi, Aizou Kaneda e K. Dušek. "Epoxy Molding Compounds as Encapsulation Materials for Microelectronic Devices". In Speciality Polymers/Polymer Physics, 1–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/bfb0017963.

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Atti di convegni sul tema "Microelectronic devices"

Ivchuk, Sergiy, Vasyl Kogut e Volodymyr Karkulyovskyy. "The Microelectronic Devices Failure Diagnostics". In 2007 International Conference on Perspective Technologies and Methods in MEMS Design. IEEE, 2007. http://dx.doi.org/10.1109/memstech.2007.4283448.

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Brahma, Mettle, Neetu Kumari, Raju Bura e Mulaka Maruthi. "Microelectronic Devices and Human Health". In 2022 International Conference on Smart and Sustainable Technologies in Energy and Power Sectors (SSTEPS). IEEE, 2022. http://dx.doi.org/10.1109/ssteps57475.2022.00089.

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Friend, R. H. "Conducting polymers in microelectronic devices". In IEE Colloquium on Conducting Polymers and Their Applications in Transducers and Instrumentation. IEE, 1996. http://dx.doi.org/10.1049/ic:19961288.

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Drouin, D., M. A-Bounouar, G. Droulers, M. Labalette, M. Pioro-Ladriere, A. Souifi e S. Ecoffey. "3D microelectronic with BEOL compatible devices". In 2015 IEEE 33rd VLSI Test Symposium (VTS). IEEE, 2015. http://dx.doi.org/10.1109/vts.2015.7116262.

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Sverdlov, Viktor, Hans Kosina e Siegfried Selberherr. "Current Flow in Upcoming Microelectronic Devices". In 2006 International Caribbean Conference on Devices, Circuits and Systems. IEEE, 2006. http://dx.doi.org/10.1109/iccdcs.2006.250826.

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Xu, Zheng, Ken Ngan, Jim VanGogh, Rod Mosely, Yoichiro Tanaka, H. Kieu, Fusen E. Chen e Ivo J. Raaijmakers. "Planar multilevel metallization technologies for ULSI devices". In Microelectronic Manufacturing, a cura di Fusen E. Chen e Shyam P. Murarka. SPIE, 1994. http://dx.doi.org/10.1117/12.186046.

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Schulze, H. J., e G. Deboy. "Optical characterization of power devices". In Microelectronic Manufacturing '95, a cura di John K. Lowell, Ray T. Chen e Jagdish P. Mathur. SPIE, 1995. http://dx.doi.org/10.1117/12.221201.

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Baicu, Floarea, Sever I. Spanulescu e Anca E. Gheorghiu. "Reliability certification of semiconductor devices using Goldthwaite diagrams". In Microelectronic Manufacturing, a cura di Michael L. Miller e Kaihan A. Ashtiani. SPIE, 2000. http://dx.doi.org/10.1117/12.410077.

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Pecht, Michael, Elviz George, Arvind Vasan e Preeti Chauhan. "Fusion prognostics-based qualification of microelectronic devices". In 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2014. http://dx.doi.org/10.1109/ipfa.2014.6898209.

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Grauby, S., A. Salhi, J.-M. Rampnoux, W. Claeys e S. Dilhaire. "Laser scanning thermomechanical imaging of microelectronic devices". In 2008 14th International Workshop on Thermal Inveatigation of ICs and Systems (THERMINIC). IEEE, 2008. http://dx.doi.org/10.1109/therminic.2008.4669905.

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Rapporti di organizzazioni sul tema "Microelectronic devices"

Grunze, M. Properties and Adhesion of Polyimides in Microelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, maggio 1991. http://dx.doi.org/10.21236/ada238204.

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Leung, M. S., e G. W. Stupian. Special Techniques for the Auger Analysis of Microelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, luglio 1986. http://dx.doi.org/10.21236/ada171631.

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Vizkelethy, Gyorgy. Simulation of ion beam induced current in radiation detectors and microelectronic devices. Office of Scientific and Technical Information (OSTI), ottobre 2009. http://dx.doi.org/10.2172/974877.

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Bates, J. B., e E. Saaski. Development of a thin-film battery powered hazard card and other microelectronic devices. CRADA final report. Office of Scientific and Technical Information (OSTI), dicembre 1997. http://dx.doi.org/10.2172/10115282.

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Siegmund, Thomas H. Numerical Simulation and Experiments of Fatigue Crack Growth in Multi-Layer Structures of MEMS and Microelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, dicembre 2006. http://dx.doi.org/10.21236/ada464298.

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Harrison, Jr, e James W. Microelectronic Device Reliability. Fort Belvoir, VA: Defense Technical Information Center, gennaio 1990. http://dx.doi.org/10.21236/ada218774.

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Belenky, Gregory. Equipment for Optoelectronic and Microelectronic Deviceb Fabrication. Fort Belvoir, VA: Defense Technical Information Center, marzo 2001. http://dx.doi.org/10.21236/ada389065.

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Guha, Supratik, H. S. Philip Wong, Jean Anne Incorvia e Srabanti Chowdhury. Future Directions Workshop: Materials, Processes, and R&D Challenges in Microelectronics. Defense Technical Information Center, giugno 2022. http://dx.doi.org/10.21236/ad1188476.

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Abstract (sommario):

Microelectronics is a complex field with ever-evolving technologies and business needs, fueled by decades of continued fundamental materials science and engineering advancement. Decades of dimensional scaling have led to the point where even the name microelectronics inadequately describes the field, as most modern devices operate on the nanometer scale. As we reach physical limits and seek more efficient ways for computing, research in new materials may offer alternative design approaches that involve much more than electron transport e.g. photonics, spintronics, topological materials, and a variety of exotic quasi-particles. New engineering processes and capabilities offer the means to take advantage of new materials designs e.g. 3D integration, atomic scale fabrication processes and metrologies, digital twins for semiconductor processes and microarchitectures. The wide range of potential technological approaches provides both opportunities and challenges. The Materials, Processes, and R and D Challenges in Microelectronics Future Directions workshop was held June 23-24, 2022, at the Basic Research Innovation Collaboration Center in Arlington, VA, to examine these opportunities and challenges. Sponsored by the Basic Research Directorate of the Office of the Under Secretary of Defense for Research and Engineering, it is intended as a resource for the S and T community including the broader federal funding community, federal laboratories, domestic industrial base, and academia.

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Pecht, Michael. The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2. Fort Belvoir, VA: Defense Technical Information Center, settembre 1993. http://dx.doi.org/10.21236/ada275029.

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Brosh, Arieh, David Robertshaw, Yoav Aharoni, Zvi Holzer, Mario Gutman e Amichai Arieli. Estimation of Energy Expenditure of Free Living and Growing Domesticated Ruminants by Heart Rate Measurement. United States Department of Agriculture, aprile 2002. http://dx.doi.org/10.32747/2002.7580685.bard.

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Research objectives were: 1) To study the effect of diet energy density, level of exercise, thermal conditions and reproductive state on cardiovascular function as it relates to oxygen (O2) mobilization. 2) To validate the use of heart rate (HR) to predict energy expenditure (EE) of ruminants, by measuring and calculating the energy balance components at different productive and reproductive states. 3) To validate the use of HR to identify changes in the metabolizable energy (ME) and ME intake (MEI) of grazing ruminants. Background: The development of an effective method for the measurement of EE is essential for understanding the management of both grazing and confined feedlot animals. The use of HR as a method of estimating EE in free-ranging large ruminants has been limited by the availability of suitable field monitoring equipment and by the absence of empirical understanding of the relationship between cardiac function and metabolic rate. Recent developments in microelectronics provide a good opportunity to use small HR devices to monitor free-range animals. The estimation of O2 uptake (VO2) of animals from their HR has to be based upon a consistent relationship between HR and VO2. The question as to whether, or to what extent, feeding level, environmental conditions and reproductive state affect such a relationship is still unanswered. Studies on the basic physiology of O2 mobilization (in USA) and field and feedlot-based investigations (in Israel) covered a , variety of conditions in order to investigate the possibilities of using HR to estimate EE. In USA the physiological studies conducted using animals with implanted flow probes, show that: I) although stroke volume decreases during intense exercise, VO2 per one heart beat per kgBW0.75 (O2 Pulse, O2P) actually increases and measurement of EE by HR and constant O2P may underestimate VO2unless the slope of the regression relating to heart rate and VO2 is also determined, 2) alterations in VO2 associated with the level of feeding and the effects of feeding itself have no effect on O2P, 3) both pregnancy and lactation may increase blood volume, especially lactation; but they have no effect on O2P, 4) ambient temperature in the range of 15 to 25°C in the resting animal has no effect on O2P, and 5) severe heat stress, induced by exercise, elevates body temperature to a sufficient extent that 14% of cardiac output may be required to dissipate the heat generated by exercise rather than for O2 transport. However, this is an unusual situation and its affect on EE estimation in a freely grazing animal, especially when heart rate is monitored over several days, is minor. In Israel three experiments were carried out in the hot summer to define changes in O2P attributable to changes in the time of day or In the heat load. The animals used were lambs and young calves in the growing phase and highly yielding dairy cows. In the growing animals the time of day, or the heat load, affected HR and VO2, but had no effect on O2P. On the other hand, the O2P measured in lactating cows was affected by the heat load; this is similar to the finding in the USA study of sheep. Energy balance trials were conducted to compare MEI recovery by the retained energy (RE) and by EE as measured by HR and O2P. The trial hypothesis was that if HR reliably estimated EE, the MEI proportion to (EE+RE) would not be significantly different from 1.0. Beef cows along a year of their reproductive cycle and growing lambs were used. The MEI recoveries of both trials were not significantly different from 1.0, 1.062+0.026 and 0.957+0.024 respectively. The cows' reproductive state did not affect the O2P, which is similar to the finding in the USA study. Pasture ME content and animal variables such as HR, VO2, O2P and EE of cows on grazing and in confinement were measured throughout three years under twenty-nine combinations of herbage quality and cows' reproductive state. In twelve grazing states, individual faecal output (FO) was measured and MEI was calculated. Regression analyses of the EE and RE dependent on MEI were highly significant (P<0.001). The predicted values of EE at zero intake (78 kcal/kgBW0.75), were similar to those estimated by NRC (1984). The EE at maintenance condition of the grazing cows (EE=MEI, 125 kcal/kgBW0.75) which are in the range of 96.1 to 125.5 as presented by NRC (1996 pp 6-7) for beef cows. Average daily HR and EE were significantly increased by lactation, P<0.001 and P<0.02 respectively. Grazing ME significantly increased HR and EE, P<0.001 and P<0.00l respectively. In contradiction to the finding in confined ewes and cows, the O2P of the grazing cows was significantly affected by the combined treatments (P<0.00l ); this effect was significantly related to the diet ME (P<0.00l ) and consequently to the MEI (P<0.03). Grazing significantly increased O2P compared to confinement. So, when EE of grazing animals during a certain season of the year is estimated using the HR method, the O2P must be re measured whenever grazing ME changes. A high correlation (R2>0.96) of group average EE and of HR dependency on MEI was also found in confined cows, which were fed six different diets and in growing lambs on three diets. In conclusion, the studies conducted in USA and in Israel investigated in depth the physiological mechanisms of cardiovascular and O2 mobilization, and went on to investigate a wide variety of ruminant species, ages, reproductive states, diets ME, time of intake and time of day, and compared these variables under grazing and confinement conditions. From these combined studies we can conclude that EE can be determined from HR measurements during several days, multiplied by O2P measured over a short period of time (10-15 min). The study showed that RE could be determined during the growing phase without slaughtering. In the near future the development microelectronic devices will enable wide use of the HR method to determine EE and energy balance. It will open new scopes of physiological and agricultural research with minimizes strain on animals. The method also has a high potential as a tool for herd management.

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