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Tesi sul tema "Metal insulator transition"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 1 febbraio 2025

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1

Mottaghizadeh, Alireza. "Non-conventional insulators : metal-insulator transition and topological protection." Electronic Thesis or Diss., Paris 6, 2014. http://www.theses.fr/2014PA066652.

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Ce manuscrit présente une étude expérimentale de phase isolante non-conventionnelle, l'isolant d'Anderson, induit par le désordre, l'isolant de Mott, induit par les interactions de Coulomb, et les isolants topologiques.Dans une première partie du manuscrit, je décrirais le développement d'une méthode pour étudier la réponse de charge de nanoparticules par Microscopie à Force Electrostatique (EFM). Cette méthode a été appliquée à des nanoparticules de magnétite (Fe3O4), un matériau qui présente une transition métal-isolant, i.e. la transition de Verwey, lors de son refroidissement en dessous d'

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2

Mottaghizadeh, Alireza. "Non-conventional insulators : metal-insulator transition and topological protection." Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066652/document.

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Ce manuscrit présente une étude expérimentale de phase isolante non-conventionnelle, l'isolant d'Anderson, induit par le désordre, l'isolant de Mott, induit par les interactions de Coulomb, et les isolants topologiques.Dans une première partie du manuscrit, je décrirais le développement d'une méthode pour étudier la réponse de charge de nanoparticules par Microscopie à Force Electrostatique (EFM). Cette méthode a été appliquée à des nanoparticules de magnétite (Fe3O4), un matériau qui présente une transition métal-isolant, i.e. la transition de Verwey, lors de son refroidissement en dessous d'

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3

Vale, J. G. "The nature of the metal-insulator transition in 5d transition metal oxides." Thesis, University College London (University of London), 2017. http://discovery.ucl.ac.uk/1538695/.

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A number of 5d transition metal oxides (TMOs) either undergo, or lie proximate to, a metal-insulator transition (MIT). However these MITs frequently depart from a Mott-Hubbard picture, in which the interactions are dominated by the interplay between the on-site Coulomb repulsion and electronic bandwidth. In 5d TMOs the sizeable intrinsic spin-orbit coupling plays an important role, and gives rise to electronic and magnetic ground states -- at both sides of the MIT -- that cannot be adequately described within a purely L-S coupling scenario. In this thesis the aim is to understand the role of s

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4

Milde, Frank. "Disorder induced metal insulator transition in anisotropic systems." Doctoral thesis, [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=963658441.

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5

Villagonzalo, Cristine. "Thermoelectric Transport at the Metal-Insulator Transition in Disordered Systems." Doctoral thesis, Universitätsbibliothek Chemnitz, 2001. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200100602.

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This dissertation demonstrates the behavior of the electronic transport properties in the presence of a temperature gradient in disordered systems near the metal-insulator transition. In particular, we first determine the d.c. conductivity, the thermopower, the thermal conductivity, the Lorenz number, the figure of merit, and the specific heat of a three-dimensional Anderson model of localization by two phenomenological approaches. Then we also compute the d.c. conductivity, the localization length and the Peltier coefficient in one dimension by a new microscopic approach based on the recursi

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6

Asal, Rasool Abid. "The metal-insulator transition in the amorphous silicon-nickel system." Thesis, University of Leicester, 1993. http://hdl.handle.net/2381/35586.

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Amorphous thin films of Si1-yNiy:H have been prepared over a wide range of compositions by radio-frequency sputtering in an argon/hydrogen plasma and their properties studied by various techniques. Transmission electron microscope investigations confirmed that the films were amorphous and the composition of the films was determined by EDAX. The principal object of the study is to investigate the nature of the semiconductor-metal transition in the a-Si1-yNiy:H system. The system has been shown to exhibit a semiconductor-to-metal transition as a function of concentration at approximately y = 0.2

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7

Madaras, Scott. "Insulator To Metal Transition Dynamics Of Vanadium Dioxide Thin Films." W&M ScholarWorks, 2020. https://scholarworks.wm.edu/etd/1616444322.

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Vanadium Dioxide (VO2) is a strongly correlated material which has been studied for many decades. VO2 has been proposed for uses in technologies such as optical modulators, IR modulators, optical switches and Mott memory devices. These technologies are taking advantage of VO2’s insulator to metal transition (IMT) and the corresponding changes to the optical and material properties. The insulator to metal transition in VO2 can be accessed by thermal heating, applied electric field, or ultra-fast photo induced processes. Recently, thin films of VO2 grown on Titanium Dioxide doped with Niobium (T

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8

Collins-McIntyre, Liam James. "Transition-metal doped Bi2Se3 and Bi2Te3 topological insulator thin films." Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:480ea55a-5cac-4bab-a992-a3201f10f4c5.

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Topological insulators (TIs) are recently predicted, and much studied, new quantum materials. These materials are characterised by their unique surface electronic properties; namely, behaving as band insulators within their bulk, but with spin-momentum locked surface or edge states at their interface. These surface/edge crossing states are protected by the underlying time-reversal symmetry (TRS) of the bulk band structure, leading to a robust topological surface state (TSS) that is resistant to scattering from impurities which do not break TRS. Their surface band dispersion has a characteristi

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9

Ho, Kai-Chung. "Monte carlo studies of metal-insulator transition in granular system /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20HO.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2002.<br>Includes bibliographical references (leaves 47-48). Also available in electronic version. Access restricted to campus users.

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10

Lam, Jennifer. "The nature of the metal-insulator transition in SiGe quantum wells." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq20977.pdf.

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11

Carnio, Edoardo. "The metal-insulator transition in doped semiconductors : an ab initio approach." Thesis, University of Warwick, 2018. http://wrap.warwick.ac.uk/106449/.

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In this thesis we study the Anderson metal-insulator transition starting from an atomistically correct ab initio description of a doped semiconductor. In particular, we use density functional theory to simulate model systems of sulphur-doped silicon (Si:S) with few impurities in a large cell. From the resulting Kohn-Sham Hamiltonian, we build an effective tight-binding Hamiltonian for larger systems with an arbitrary number of dopants. Our effective model assumes the same potential around single and paired impurities, for up to ten nearest neighbours and disregarding configurations of three an

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12

Lewalle, Alexandre. "Metallic behaviour and the metal-insulator transition in two-dimensional systems." Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.619842.

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13

Pounder, Neill Malcolm. "The electrical transport properties of niobium-silicon amorphous alloys." Thesis, University of Leeds, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305616.

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14

Lam, Jennifer Eleanor. "The nature of the metal-insulator transition in silicon germanide quantum wells." Thesis, University of Ottawa (Canada), 1997. http://hdl.handle.net/10393/4399.

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A study of the temperature dependence of the resistivity of gated SiGe quantum well structures has revealed a metal-insulator transition as a function of carrier density at zero magnetic field. Although early scaling theories (Abrahams et al., 1979) have argued against the existence of a metal-insulator transition at zero temperature in infinite 2D and 1D systems, more recent theoretical results using a random set of two-dimensional point potentials have shown that such a transition is allowed in two dimensions (Az'bel, 1992). Mounting experimental evidence for such a transition in 2D systems

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15

Bilewska, Katarzyna. "Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films." Doctoral thesis, Katowice : Uniwersytet Śląski, 2019. http://hdl.handle.net/20.500.12128/12529.

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Przejście metal-izolator jest jednym z najciekawszych zjawisk, którymi zajmuje się fizyka ciała stałego. Nie tylko ze względu na możliwe zastosowania tego zjawiska, ale przede wszystkim ze względu na samą jego fizykę, ogromna ilość prac jest poświęcona badaniu go. Geneza i kluczowe czynniki jego występowania takie jak odpychanie kulombowskie, rozszczepienie spin-orbita czy inne, różnią się znacznie w zależności od rozważanego materiału. Pośród dużej grupy materiałów nikielaty ziem rzadkich, obiekt badań tej pracy, reprezentują tylko jeden rodzaj przejścia. W tych materiałach przejście metal-i

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16

Gonzalez, Rosillo Juan Carlos. "Volume resistive switching in metallic perovskite oxides driven by the metal-Insulator transition." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/405305.

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Los óxidos de perovskita fuertemente correlacionados son una clase de materials con fascinantes propiedades físicas intrínsecas debido a la interacción de efectos de carga, spin, órbita y cristalinos. Efectos exóticos, como superconductividad, ferromagnetismo, ferroelectricidad o transiciones metal-aislante se producen gracias a la competición de los diferentes grados de libertad del sistema. El uso de estos efectos en una nueva generación de dispositivos es una fuente de inspiración continua para la comunidad científica. Los dispositivos de Memoria Resistiva de Acceso aleatorio (RRAM) son

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17

Blümer, Nils [Verfasser]. "Mott-Hubbard Metal-Insulator Transition and Optical Conductivity in High Dimensions / Nils Blümer." Aachen : Shaker, 2003. http://d-nb.info/1172609020/34.

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18

Proskuryakov, Yuri. "Interactions, localisation and the metal to insulator transition in two-dimensional semiconductor systems." Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288367.

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19

Qiu, Lei. "Exploring 2D Metal-Insulator Transition in p-GaAs Quantum Well with High rs." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1386337954.

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20

Che, Lah Nurul Akmal. "Conductivity studies of the size-induced metal-insulator transition (SIMIT) in silver nanoparticles." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:a2337bd5-0502-4bc0-a565-971e0fa8f6fc.

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In his tenth decade, Professor Sir Nevill Mott, in a letter to Professor Peter P. Edwards, reminiscenced about the fundamental difference between metals and non-metals; thus he wrote of the situation at the absolute zero of temperature (T = 0 K) '... there a metal conducts, and a non-metal doesn't'. This simple but amazingly powerful commentary stands as a powerful abiding description of the challenge of the fascinating question as to what makes a metal conduct. Many years of experimental studies of metals and nonmetals, targeted at the experimental verification in divided-metal systems rangin

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21

Nájera, Ocampo Oscar. "Study of the dimer Hubbard Model within Dynamical Mean Field Theory and its application to VO₂." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS462/document.

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J'étudie en détail la solution d'un modèle simplifié d'électrons fortement corrélés, à savoir le modèle de Hubbard dimérisé. Ce modèle est la réalisation la plus simple d'un problème de cluster DMFT. Je fournis une description détaillée des solutions dans une région de coexistence où l'on trouve deux états (méta) stables des équations DMFT, l'un métallique et l'autre isolant. De plus, je décris en détail comment ces états disparaissent à leurs lignes critiques respectives. Je clarifie le rôle clé joué par la corrélation intra-dimère, qui agit ici en complément des corrélations de Coulomb.Je pa

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22

Capone, Massimo. "The Mott Transition: Role of Frustration and Orbital Degeneracy." Doctoral thesis, SISSA, 2000. http://hdl.handle.net/20.500.11767/4230.

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23

Zhu, Zhi Huai. "The metal-insulator transition in Mn-substituted Sr₃Ru₂O₇ by a photoemission study." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/13906.

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We have studied the metal-insulator transition (MIT) in Mn-substituted Sr₃Ru₂O₇ by x-ray photoemission (XPS) and angle-resolved photoemission spectroscopy (ARPES). In XPS, both the surface- and bulk-sensitive spectra show a two-peak structure, corresponding to the well screened and the unscreened excitations. The evolution of the well screened peak with Mn is that the higher the concentration of Mn impurities, the lower the intensity of the peak, indicating that the screening channels are determined by the metallic property of a system. In ARPES, a strong doping dependence is also observe

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24

Hossain, M. A. "Metal-insulator transition, orbital symmetries and gaps in correlated oxides : an impurity control approach." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/16753.

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The primary objective of this research is to develop and study newer ways to control electronic properties of correlated oxide systems using impurities. This goal has been achieved by introducing dilute localized 3d Mn impurities in place of a delocalized 4d Ru sites in a 2-dimensional Ru-O matrix and doping an electronically reconstructed polar surface of YBCO via surface impurities. The first part of the work concentrates on X-ray Absorption Spectroscopy (XAS) and Resonant Soft X-ray Scattering (RSXS) studies on lightly Mn doped Sr₃Ru₂O₇ . Our goal is to understand the electronic structure o

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25

Leighton, Christopher. "Persistent photoconductivity and the metal-insulator transition in Cd(_1-x)Mn(_x)Te:In." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/5008/.

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The persistent photoconductivity (PPC) effect in the diluted magnetic semiconductor Cd(_1-x)Mn(_x)Te:In has been studied in detail. Electrical transport measurements have been made on a large number of samples to build up an understanding of the phototransport properties of this material. In particular, the compositional dependence of the phototransport parameters has been measured up to x ≈ 0.2. Several samples exhibit an elevated temperature PPC effect which has been interpreted in terms of the formation of multiple DX centres. These samples can have a quenching temperature of up to 190 K, s

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26

Rodríguez, Domínguez Laura. "Implications of phase coexistence in VO(2) thin-films across the metal-insulator transition." Doctoral thesis, Universitat de Barcelona, 2021. http://hdl.handle.net/10803/673256.

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A Metal-insulator transition (MIT) is the ability of some materials to change between metal and insulator electric behaviours as a function of some external stimuli such as temperature, stress, voltage, magnetic field or light. The Fermi level position with respect to the band structure determines one character or the other, and in some materials this band structure is very sensitive to electron-electron correlations. This is the case of some transition metal oxides, which despite having partially filled bands allowing, in theory, metallic conduction, electron- electron interactions split the

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27

Liu, Mengkun. "Ultrafast far-infrared studies of Vanadates - multiple routes for an insulator to metal transition." Thesis, Boston University, 2012. https://hdl.handle.net/2144/12484.

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Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis or dissertation. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.<br>The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V2

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28

Neupane, Krishna Prasad. "Studies of the Insulator-Metal Transition in La1-xCaxMnO3 and Thin Film Growth of Nd0.2Sr0.8MnO3." Scholarly Repository, 2009. http://scholarlyrepository.miami.edu/oa_dissertations/231.

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Two experimental projects involving perovskite manganese oxide compounds are presented. The first involved dielectric and transport studies of the insulator-metal transition as a function of charge-carrier doping in La1-xCaxMnO3 (0 < x < 0.15) bulk samples. The results provide new insight into the role of competing magnetic, lattice and Coulomb energies in determining the insulator-metal transition near x=0.22. The second project involved the growth, structural characterization, and resistive anisotropy of a-axis oriented Nd0.2Sr0.8MnO3 thin films with thicknesses t in the range 10 nm< t < 150

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29

Spitzig, Alyson. "The importance of Joule heating on the voltage-triggered insulator-to-metal transition in VO₂." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62808.

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The large change in resistivity in the material VO₂ has attracted considerable attention since it was first discovered in 1959. Recently, the ability to trigger the insulator-to-metal transition (IMT) with a strong electric field has been observed, but there has been debate about whether the transition is due to field-effects. We apply a voltage bias across a VO₂ thin film via a conductive atomic force microscope (CAFM) tip and measure the resultant current. We observe the IMT as a jump in the measured current in the IV curves. We fit the IV curves to the Poole-Frenkel (PF) conduction mechanis

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30

Weerasinghe, Hasitha C. "Electrical characterization of metal-to-insulator transition in iron silicide thin films on sillicone substrates." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001677.

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31

Watson, Deborah Lee. "Quantum interference effects in the magnetoresistance of semiconductor structures near the metal to insulator transition." Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286547.

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32

Wei, Haoming, Marcus Jenderka, Michael Bonholzer, Marius Grundmann, and Michael Lorenz. "Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices." American Institute of Physics, 2015. https://ul.qucosa.de/id/qucosa%3A23552.

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A dimensionality controlled metal insulator transition in epitaxial [LaNiO3 (d nm)/LaAlO3(2nm)]10 (100) superlattices (thereafter [d/2]10 SLs) is demonstrated for decreasing LaNiO3 single layer thickness from 4nm down to 1.2 nm. The [4/2]10 SL shows metallic behavior with positive resistivity temperature coefficient, while the [2/2]10 SL shows a metal-insulator transition with crossover from 3D to two-dimensional single-layer dimensionality. Strong localization appears for the [1.2/2]10 SL with the resistivity being dominated by two-dimensional variable range hopping with a localization length

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Wei, Haoming, Marius Grundmann, and Michael Lorenz. "Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices." American Institute of Physics, 2016. https://ul.qucosa.de/id/qucosa%3A23553.

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Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by twodimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNi

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34

Meetei, Oinam Nganba. "Metal-Insulator Transition and Novel Magnetism Driven by Coulomb Interactions, Spin-Orbit Coupling and Disorder." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1405698402.

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O'Neal, Jared. "A Numerical Study of a Disorder-driven 2D Mott Insulator-to-Metal Quantum Phase Transition." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492701913534985.

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36

Vidas, Luciana. "The insulator-metal phase transition in VO2 measured at nanometer length scales and femtosecond time scales." Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/666959.

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The physics of transition-metal oxides presents a challenge to our current understanding of condensed matter physics. The main difficulty arises from a competition between electron-electron and electron-phonon interactions to dictate the properties of these complex materials. This issue is particularly apparent in vanadium dioxide, which undergoes an electronic and structural phase transition close to room temperature. Despite more than 50 years of research, the origin of the transformation is still actively debated, with contradictory interpretations often reported. The main goal of this thes

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37

Maliepaard, Michael Cornelis. "The metal-insulator transition in GaAs and Inâ†0â†.â†5â†3Gaâ†0â†.â†4â†7As." Thesis, University of Cambridge, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303254.

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D'ELIA, ALESSANDRO. "VO2 a prototypical Phase Change Material: spectroscopic study of the orbital contribution across the Metal Insulator Transition." Doctoral thesis, Università degli Studi di Trieste, 2020. http://hdl.handle.net/11368/2967985.

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Il VO2 è un affascinante sistema con configurazione 3d1 che esibisce una transizione metallo isolane (MIT) a 67°C accompagnata da una transizione strutturale, passando da una fase monoclina isolante a bassa temperatura ad una metallica tetragonale ad alta temperatura. Dalla sua scoperta, la MIT è stata ampiamente studiata sia per il suo potenziale applicativo che per investigarne la natura. Diversi modelli teorici sono stati proposti in letteratura per spiegare la natura della MIT come una transizione strutturale di Peierls o una transizione Mott-Hubbard innescata dalla repulsione Coulombian

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39

Durandurdu, Murat. "Polyamorphism in Semiconductors." Ohio University / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1040060243.

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40

Zhou, Wei. "Oblique Angle Deposition Effects on Magnetron-Sputtered Metal Films." Miami University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=miami1501067883261477.

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41

Heidkamp, Marcus. "Spin coherence and -dephasing of donor and free conduction band electrons across the metal-insulator transition in Si:GaAs." kostenfrei, 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=977727149.

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42

Read, Daniel Edward. "Electrical and magnetic properties of n-Cd(_1-x)Mn(_x) Te close to the metal-insulator transition." Thesis, Durham University, 2001. http://etheses.dur.ac.uk/3783/.

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Electrical transport and magnetic measurements have been made on n-Cd(_1-x)Mn(_x) Te (0.047 < X < 0.197) for samples doped with hi or In,Al. Results are presented for measurements made as a function of temperature (40 mK < T < 300 K), applied magnetic field (0 T < B < 6 T) and photogenerated carrier density. Low field magnetic susceptibility measurements have identified a transition from a paramagnetic phase to a spin glass phase at low temperatures. The measured temperature dependence of the magnetic susceptibility is consistent with a cluster glass model. Measurements of the spin glass freez

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43

Wilkinson, Aidan. "Transport phenomena in two-phase systems." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/25574.

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The physics of two-phase systems is explored here, particularly magneto-transport and low temperature d.c. conductivity in thin films. The extraordinary magnetoresistance (EMR) effect was analysed in the context of previous experimental and theoretical considerations. The magnetoresistance (MR) may be enhanced by up to two orders of magnitude by changing the geometry. This was investigated using finite element analysis. Thin film samples consisting of a layered structure of Germanium-Tin-Germanium (Ge-Sn-Ge) were created in collaboration with Shandong University in China. Ge layers were kept a

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Butrouna, Kamal H. "A Systematic Transport and Thermodynamic Study of Heavy Transition Metal Oxides with Hexagonal Structure." UKnowledge, 2014. http://uknowledge.uky.edu/physastron_etds/24.

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Abstract (sommario):

There is no apparent, dominant interaction in heavy transition metal oxides (TMO), especially in 5d-TMO, where all relevant interactions are of comparable energy scales, and therefore strongly compete. In particular, the spin-orbit interaction (SOI) strongly competes with the electron-lattice and on-site Coulomb interaction (U). Therefore, any tool that allows one to tune the relative strengths of SOI and U is expected to offer an opportunity for the discovery and study of novel materials. BaIrO3 is a magnetic insulator driven by SOI whereas the isostructural BaRuO3 is a paramagnetic metal. Th

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45

Herwadkar, Aditi A. "Electronic structure and magnetism in some transition metal nitrides Mn-doped ScN, dilute magnetic semiconductor and CrN, Mott insulator /." online version, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=case1164816868.

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46

Herwadkar, Aditi Dr. "Electronic structure and magnetism in some transition metal nitrides: MN-doped ScN, dilute magnetic semiconductor and CrN, Mott insulator." Case Western Reserve University School of Graduate Studies / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=case1164816868.

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47

Schütz, Philipp [Verfasser], Ralph [Gutachter] Claessen, Matthias [Gutachter] Bode, and Andrea [Gutachter] Caviglia. "Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO\(_3\) / Philipp Schütz ; Gutachter: Ralph Claessen, Matthias Bode, Andrea Caviglia." Würzburg : Universität Würzburg, 2020. http://d-nb.info/1219430102/34.

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48

Peres, Marcelos Lima. "Localização de Anderson e transição metal-isolante em filmes de Pb1-xEuxTe do tipo p." Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-29082008-081824/.

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Neste trabalho, realizamos o estudo da transição metal-isolante e da localização de Anderson na liga de Pb1-xEuxTe do tipo p para x variando de 0 até 0.1. As propriedades de transporte nessa liga (mobilidade, concentração de portadores e resistividade elétrica) foram obtidas utilizando o método de caracterização elétrica por efeito Hall entre as temperaturas de 300 K e 10 K. Nessa região de temperatura, foi possível observar uma transição metal-isolante para x > 0.05. Verificamos que a transição é do tipo Anderson e ocorre devido à desordem presente na liga. Para baixas temperaturas (T < 10 K)

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49

Tshepe, Tshakane. "Metal-insulator transition in boron-ion implanted type IIa diamond." Thesis, 2000. https://hdl.handle.net/10539/26301.

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A thesis submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in fulfillment of the requirements for the degree of Doctor of Philosophy.<br>High purity natural type Il a diamond specimens were used in this study. Conducting layers in the surfaces of these diamonds were generated using low-ion dose multiple implantation-annealing steps. The implantation energies and the ion-doses were spread evenly to intermix the point-defects, thereby increasing the probability of interstitialvacancy recombinations and promoting dopant-interstitial-vacancy combination resul

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50

Luo, Ji-Chang, and 羅際昌. "Metal-insulator transition in few-layer MoS2." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/13014086139344380438.

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碩士<br>國立交通大學<br>電子物理系所<br>103<br>Comparing to three-dimensional bulks, two-dimensional materials exhibit many novel physical properties and show excellently their applications in nano- and opto-electronics. In addition to graphene, other two-dimensional materials, having layered structure of semiconductor material such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), draw much attention because of the presence of indirect bandgap. The MoS2 can be used for making field-effect transistors (FETs) to give a high on/off ratio of above 106. In this work, the electron transport in MoS2

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