Bibliografie tematiche / Metal insulator transition

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Letteratura scientifica selezionata sul tema "Metal insulator transition"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 25 maggio 2024

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Articoli di riviste sul tema "Metal insulator transition"

Schlottmann, P., e C. S. Hellberg. "Metal-insulator transition in dirty Kondo insulators". Journal of Applied Physics 79, n. 8 (1996): 6414. http://dx.doi.org/10.1063/1.362014.

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Malinenko, V. P., L. A. Aleshina, A. L. Pergament e G. V. Germak. "Switching Effects and Metal−Insulator Transition in Manganese Oxide". Journal on Selected Topics in Nano Electronics and Computing 1, n. 1 (dicembre 2013): 44–50. http://dx.doi.org/10.15393/j8.art.2013.3005.

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CHEN, DONG-MENG, e LIANG-JIAN ZOU. "ORBITAL INSULATORS AND ORBITAL ORDER–DISORDER INDUCED METAL–INSULATOR TRANSITION IN TRANSITION-METAL OXIDES". International Journal of Modern Physics B 21, n. 05 (20 febbraio 2007): 691–706. http://dx.doi.org/10.1142/s0217979207036618.

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The role of orbital ordering on metal–insulator transition in transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap of single-particle excitation spectra on the orbital order parameter is found. The thermal fluctuation drives the orbital order–disorder transition, diminishes the gap and leads to the metal–insulator transition. The unusual temperature dependence of the orbital polarization in the orbital insulator is also manifested in the resonant X-ray scattering intensity.

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Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song et al. "Isostructural metal-insulator transition in VO2". Science 362, n. 6418 (29 novembre 2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.

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The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

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Milligan, R. F., e G. A. Thomas. "The Metal-Insulator Transition". Annual Review of Physical Chemistry 36, n. 1 (ottobre 1985): 139–58. http://dx.doi.org/10.1146/annurev.pc.36.100185.001035.

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Wang, Hangdong, Jinhu Yang, Qi Li, Zhuan Xu e Minghu Fang. "Metal–insulator transition in". Physica B: Condensed Matter 404, n. 1 (gennaio 2009): 52–54. http://dx.doi.org/10.1016/j.physb.2008.10.005.

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Harigaya, Kikuo. "Metal-insulator transition inC60polymers". Physical Review B 52, n. 11 (15 settembre 1995): 7968–71. http://dx.doi.org/10.1103/physrevb.52.7968.

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Tsurubayashi, M., K. Kodama, M. Kano, K. Ishigaki, Y. Uwatoko, T. Watanabe, K. Takase e Y. Takano. "Metal-insulator transition in Mott-insulator FePS3". AIP Advances 8, n. 10 (ottobre 2018): 101307. http://dx.doi.org/10.1063/1.5043121.

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Weidemann, Sebastian, Mark Kremer, Stefano Longhi e Alexander Szameit. "Topological triple phase transition in non-Hermitian Floquet quasicrystals". Nature 601, n. 7893 (19 gennaio 2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.

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AbstractPhase transitions connect different states of matter and are often concomitant with the spontaneous breaking of symmetries. An important category of phase transitions is mobility transitions, among which is the well known Anderson localization1, where increasing the randomness induces a metal–insulator transition. The introduction of topology in condensed-matter physics2–4 lead to the discovery of topological phase transitions and materials as topological insulators5. Phase transitions in the symmetry of non-Hermitian systems describe the transition to on-average conserved energy6 and new topological phases7–9. Bulk conductivity, topology and non-Hermitian symmetry breaking seemingly emerge from different physics and, thus, may appear as separable phenomena. However, in non-Hermitian quasicrystals, such transitions can be mutually interlinked by forming a triple phase transition10. Here we report the experimental observation of a triple phase transition, where changing a single parameter simultaneously gives rise to a localization (metal–insulator), a topological and parity–time symmetry-breaking (energy) phase transition. The physics is manifested in a temporally driven (Floquet) dissipative quasicrystal. We implement our ideas via photonic quantum walks in coupled optical fibre loops11. Our study highlights the intertwinement of topology, symmetry breaking and mobility phase transitions in non-Hermitian quasicrystalline synthetic matter. Our results may be applied in phase-change devices, in which the bulk and edge transport and the energy or particle exchange with the environment can be predicted and controlled.

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Ling, Yi. "Holographic lattices and metal–insulator transition". International Journal of Modern Physics A 30, n. 28n29 (20 ottobre 2015): 1545013. http://dx.doi.org/10.1142/s0217751x1545013x.

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This paper is an extension of the talk given at the conference on Gravitation and Cosmology/The Fourth Galileo-Xu Guangqi Meeting. We intend to present a short review on recent progress on the construction of holographic lattices and its application to metal–insulator transition (MIT), which is a fundamentally important phenomenon in condensed matter physics. We will firstly implement the Peierls phase transition by constructing holographic charge density waves which are induced by the spontaneous breaking of translational symmetry. Then we turn to the holographic realization of metal–insulator transition as a quantum critical phenomenon with many strongly correlated electrons involved. The holographic entanglement entropy as a diagnostic for such quantum phase transitions will be briefly mentioned.

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Tesi sul tema "Metal insulator transition"

Mottaghizadeh, Alireza. "Non-conventional insulators : metal-insulator transition and topological protection". Electronic Thesis or Diss., Paris 6, 2014. http://www.theses.fr/2014PA066652.

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Ce manuscrit présente une étude expérimentale de phase isolante non-conventionnelle, l'isolant d'Anderson, induit par le désordre, l'isolant de Mott, induit par les interactions de Coulomb, et les isolants topologiques.Dans une première partie du manuscrit, je décrirais le développement d'une méthode pour étudier la réponse de charge de nanoparticules par Microscopie à Force Electrostatique (EFM). Cette méthode a été appliquée à des nanoparticules de magnétite (Fe3O4), un matériau qui présente une transition métal-isolant, i.e. la transition de Verwey, lors de son refroidissement en dessous d'une température TV~120 K.Dans une seconde partie, ce manuscrit présente une étude détaillée de l'évolution de la densité d'états au travers de la transition métal-isolant entre un isolant de type Anderson-Mott et une phase métallique dans le matériau SrTiO3, et ceci, en fonction de la concentration de dopants, les lacunes d'oxygènes. Nous avons trouvé que dans un dispositif memoresistif de type Au-SrTiO3-Au, la concentration de dopants pouvait être ajustée par migration des lacunes d'oxygènes à l'aide d'un champ. Dans cette jonction tunnel, l'évolution de la densités d'états au travers de la transition métal-isolant peut être étudiée de façon continue. Finalement, dans une troisième partie, le manuscrit présente le développement d'une méthode pour la microfabrication d'anneaux de Aharonov-Bohm avec l'isolant topologique, Bi2Se3, déposée par épitaxie à jet moléculaire. Des résultats préliminaires sur les propriétés de transport quantique de ces dispositifs seront présentés
This manuscript presents an experimental study of unconventional insulating phases, which are the Anderson insulator, induced by disorder, the Mott insulator, induced by Coulomb interactions, and topological insulators.In a first part of the manuscript, I will describe the development of a method to study the charge response of nanoparticles through Electrostatic Force Microscopy (EFM). This method has been applied to magnetite Fe3O4 nanoparticles, a material that presents a metal-insulator transition, i.e. the Verwey transition, upon cooling the system below a temperature Tv=120K. In a second part, this manuscript presents a detailed study of the evolution of the Density Of States (DOS) across the metal-insulator transition between an Anderson-Mott insulator and a metallic phase in the material SrTiO3 and this, as function of dopant concentration, i.e. oxygen vacancies. We found that in this memristive type device Au-SrTiO3-Au, the dopant concentration could be fine-tuned through electric-field migration of oxygen vacancies. In this tunnel junction device, the evolution of the DOS can be followed continuously across the metal-insulator transition. Finally, in a third part, the manuscript presents the development of a method for the microfabrication of Aharonov-Bohm rings with the topological insulator material, Bi2Se3, grown by molecular beam epitaxy. Preliminary results on the quantum transport properties of these devices will be presented

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Mottaghizadeh, Alireza. "Non-conventional insulators : metal-insulator transition and topological protection". Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066652/document.

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Vale, J. G. "The nature of the metal-insulator transition in 5d transition metal oxides". Thesis, University College London (University of London), 2017. http://discovery.ucl.ac.uk/1538695/.

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A number of 5d transition metal oxides (TMOs) either undergo, or lie proximate to, a metal-insulator transition (MIT). However these MITs frequently depart from a Mott-Hubbard picture, in which the interactions are dominated by the interplay between the on-site Coulomb repulsion and electronic bandwidth. In 5d TMOs the sizeable intrinsic spin-orbit coupling plays an important role, and gives rise to electronic and magnetic ground states -- at both sides of the MIT -- that cannot be adequately described within a purely L-S coupling scenario. In this thesis the aim is to understand the role of spin-orbit coupling in determining the electronic and magnetic properties of 5d TMOs. There has been a large amount of recent interest within this field (both experimentally and theoretically), however thus far has mostly been limited to the 5d5, j =1/2 limit. The perovskite iridates Sr2IrO4 and Sr3Ir2O7 lie within this limit. Theoretical predictions suggest a significant easy-plane anisotropy is present for the single layer Sr2IrO4. I show that this anisotropy can be observed and quantified, using magnetic critical scattering and previously published resonant inelastic X-ray scattering (RIXS) data. This differs from previous results that suggest purely 2D Heisenberg behaviour. Meanwhile the critical fluctuations in bilayer Sr3Ir2O7 have a three-dimensional nature, which can be directly related to the intra-bilayer coupling and significant anisotropy previously probed by RIXS. I also demonstrate that resonant X-ray scattering techniques can be successfully applied to other 5d systems, especially the d3 osmates. Both NaOsO3 and Cd2Os2O7 undergo MITs directly linked to the onset of antiferromagnetic order (Slater or Lifshitz mechanisms). The first ever high-resolution RIXS measurements at the Os L3 absorption edge reveal that there is a correlated evolution of the electronic and magnetic excitations through the respective MITs. The behaviour is consistent with a scenario in which the effect of spin-orbit coupling and electron correlations are reduced with respect to the iridates, yet still manifests through a strong spin wave anisotropy. Finally I show that the study of 5d TMOs can be extended into the time domain. Through the development of new instrumentation, the transient dynamics of photo-doped Sr2IrO4 were probed by time-resolved resonant (in)elastic X-ray scattering. The relevant time scales can be directly compared to the interaction strengths and anisotropies in the undoped state. Moreover, there seems to be an effective mapping of the transient behaviour in the photo-doped state to an equivalent level of bulk electron doping in (Sr_{1-x}La_x)2IrO4.

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Milde, Frank. "Disorder induced metal insulator transition in anisotropic systems". Doctoral thesis, [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=963658441.

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Villagonzalo, Cristine. "Thermoelectric Transport at the Metal-Insulator Transition in Disordered Systems". Doctoral thesis, Universitätsbibliothek Chemnitz, 2001. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200100602.

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This dissertation demonstrates the behavior of the electronic transport properties in the presence of a temperature gradient in disordered systems near the metal-insulator transition. In particular, we first determine the d.c. conductivity, the thermopower, the thermal conductivity, the Lorenz number, the figure of merit, and the specific heat of a three-dimensional Anderson model of localization by two phenomenological approaches. Then we also compute the d.c. conductivity, the localization length and the Peltier coefficient in one dimension by a new microscopic approach based on the recursive Green's functions method. A fully analytic study is difficult, if not impossible, due to the problem of treating the intrinsic disorder in the model, as well as, incorporating a temperature gradient in the Hamiltonian. Therefore, we resort to various numerical methods to investigate the problem.

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Asal, Rasool Abid. "The metal-insulator transition in the amorphous silicon-nickel system". Thesis, University of Leicester, 1993. http://hdl.handle.net/2381/35586.

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Amorphous thin films of Si1-yNiy:H have been prepared over a wide range of compositions by radio-frequency sputtering in an argon/hydrogen plasma and their properties studied by various techniques. Transmission electron microscope investigations confirmed that the films were amorphous and the composition of the films was determined by EDAX. The principal object of the study is to investigate the nature of the semiconductor-metal transition in the a-Si1-yNiy:H system. The system has been shown to exhibit a semiconductor-to-metal transition as a function of concentration at approximately y = 0.26 at which value the optical gap shrinks to zero and beyond which the reflectivity falls with increasing photon energy in the region 0.5 - 2 eV, i.e becomes Drude-like. D.C. electrical conductivity measurements as a function of temperature show an increase in conductivity and a decrease in activation energy with increasing nickel content which is close to zero for y 0.26. The optical joint density of states (OJDOS) is finite at all energies for y ~ 0.26, confirming the existence of overlap between the conduction and valence bands. Pressure-induced transitions from semiconductor-to-metallic behaviour of the a-Si1-yNiy:H films have been investigated by measurements of the optical absorption edge as a function of pressure in a diamond anvil cell and by measurements of the electrical conductivity in a Bridgman opposed-anvil apparatus, both at room temperature. The optical gap decreases with increasing pressure, becoming zero at pressures that are lower the higher the nickel content. The electrical conductivity increases with applied pressure for all samples studied, reaching a saturation value close to the Mott's minimum metallic conductivity; this also occurs at lower values of the pressure for films with higher nickel content. Information on the structure and the local bonding configurations for the a-Si1-yNiy:H films was obtained from EXAFS and IR measurements. The results indicate that there is a significant change in the local environment of the Ni atoms as their concentration is changed but the system appears to favour chemical ordering.

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Madaras, Scott. "Insulator To Metal Transition Dynamics Of Vanadium Dioxide Thin Films". W&M ScholarWorks, 2020. https://scholarworks.wm.edu/etd/1616444322.

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Vanadium Dioxide (VO2) is a strongly correlated material which has been studied for many decades. VO2 has been proposed for uses in technologies such as optical modulators, IR modulators, optical switches and Mott memory devices. These technologies are taking advantage of VO2’s insulator to metal transition (IMT) and the corresponding changes to the optical and material properties. The insulator to metal transition in VO2 can be accessed by thermal heating, applied electric field, or ultra-fast photo induced processes. Recently, thin films of VO2 grown on Titanium Dioxide doped with Niobium (TiO2:Nb), have shown promise as a possible UV photo detector with high quantum efficiency which utilizes a heterostructure between these two materials. In this work, the dynamics of the IMT on thin films of VO2 is explored. We show that surface plasmons generated in an Au thin film can induce the insulator to metal transition in a thin film of VO2 due to the enhanced electric field as well as help detect the IMT via changes in its resonance condition. Time resolved pump probe studies were also done on thin films of VO2 grown on TiO2 and TiO2:Nb, using UV photon energy of 3.1 eV (400nm wavelength). The fluence threshold of the IMT at 3.1 eV was significantly lower than published values for the 1.55 eV pump fluence. The time response of the IMT shows uncommon reflectivity dynamics in these samples. The response was partially attributed to internal interference of the reflected probe beam from the inhomogeneous layers formed inside the film by different phases of VO2, and can be elucidated by a diffusion model with respect to its optical properties. Finally, the photocurrent generation time constants for the sample with highest quantum efficiency are given and compared to its ultrafast photo induced IMT time constants.

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Collins-McIntyre, Liam James. "Transition-metal doped Bi2Se3 and Bi2Te3 topological insulator thin films". Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:480ea55a-5cac-4bab-a992-a3201f10f4c5.

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Topological insulators (TIs) are recently predicted, and much studied, new quantum materials. These materials are characterised by their unique surface electronic properties; namely, behaving as band insulators within their bulk, but with spin-momentum locked surface or edge states at their interface. These surface/edge crossing states are protected by the underlying time-reversal symmetry (TRS) of the bulk band structure, leading to a robust topological surface state (TSS) that is resistant to scattering from impurities which do not break TRS. Their surface band dispersion has a characteristic crossing at time reversal invariant momenta (TRIM) called a Dirac cone. It has been predicted that the introduction of a TRS breaking effect, through ferromagnetic order for instance, will open a band-gap in this Dirac cone. It can be seen that magnetic fields are not time reversal invariant by considering a solenoid. If time is reversed, the current will also reverse in the solenoid and so the magnetic field will also be reversed. So it can be seen that magnetic fields transform as odd under time reversal, the same will be true of internal magnetisation. By manipulating this gapped surface state a wide range of new physical phenomena are predicted, or in some cases, already experimentally observed. Of particular interest is the recently observed quantum anomalous Hall effect (QAHE) as well as, e.g., topological magneto-electric effect, surface Majorana Fermions and image magnetic monopoles. Building on these novel physical effects, it is hoped to open new pathways and device applications within the emerging fields of spintronics and quantum computation. This thesis presents an investigation of the nature of magnetic doping of the chalcogenide TIs Bi₂Se₃ and Bi₂Te₃ using 3d transition-metal dopants (Mn and Cr). Samples were grown by molecular beam epitaxy (MBE), an ideal growth method for the creation of high-quality thin film TI samples with very low defect densities. The grown films were investigated using a range of complementary lab-based and synchrotron-based techniques to fully resolve their physical structure, as well as their magnetic and electronic properties. The ultimate aim being to form a ferromagnetic ground state in the insulating material, which may be expanded into device applications. Samples of bulk Mn-doped Bi₂Te₃ are presented and it is shown that a ferromagnetic ground state is formed below a measured T_C of 9-13 K as determined by a range of experimental methodologies. These samples are found to have significant inhomogeneities within the crystal, a problem that is reduced in MBE-grown crystals. Mn-doped Bi₂Se₃ thin films were grown by MBE and their magnetic properties investigated by superconducting quantum interference device (SQUID) magnetometry and x-ray magnetic circular dichroism (XMCD). These reveal a saturation magnetisation of 5.1 μ_B/Mn and show the formation of short-range magnetic order at 2.5 K (from XMCD) with indication of a ferromagnetic ground state forming below 1.5 K. Thin films of Cr-doped Bi₂Se₃ were grown by MBE, driven by the recent observation of the QAHE in Cr-doped (Bi_1−xSb_x)₂Te₃. Investigation by SQUID shows a ferromagnetic ground state below 8.5 K with a saturation magnetisation of 2.1 μ_B/Cr. Polarised neutron reflectometry shows a uniform magnetisation profile with no indication of surface enhancement or of a magnetic dead layer. Further studies by extended x-ray absorption fine structure (EXAFS) and XMCD elucidate the electronic nature of the magnetic ground state of these materials. It is found that hybridisation between the Cr d and Se p orbitals leads to the Cr being divalent when doping on the Bi³⁺ site. This covalent character to the electronic structure runs counter to the previously held belief that divalent Cr would originate from Cr clusters within the van der Waals gap of this material. The work overall demonstrates the formation of a ferromagnetic ground state for both Cr and Mn doped material. The transition temperature, below which ferromagnetic order is achieved, is currently too low for usable device applications. However, these materials provide a promising test bed for new physics and prototype devices.

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Ho, Kai-Chung. "Monte carlo studies of metal-insulator transition in granular system /". View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20HO.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2002.
Includes bibliographical references (leaves 47-48). Also available in electronic version. Access restricted to campus users.

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Lam, Jennifer. "The nature of the metal-insulator transition in SiGe quantum wells". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq20977.pdf.

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Più fonti

Libri sul tema "Metal insulator transition"

Gebhard, Florian. The Mott Metal-Insulator Transition. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/3-540-14858-2.

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Gebhard, Florian. The mott metal-insulator transition: Models and methods. New York: Springer, 1997.

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mer, Nils Blu. Mott-Hubbard metal-insulator transition and optical conductivity in high dimensions. Aachen: Shaker, 2003.

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Cheng, Minghao. Spectroscopy of the Temperature and Current Driven Metal-Insulator Transition in Ca₂RuO₄. [New York, N.Y.?]: [publisher not identified], 2020.

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F, Mott N. Metal-insulator transitions. 2^a ed. London: Taylor & Francis, 1990.

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International Conference on Heavy Doping and the Metal-Insulator Transition in Semiconductors (1984 Santa Cruz). Heavy doping and the metal-insulator transition in semiconductors: International conference, University of California at Santa Cruz, California, U.S.A., 30 July-3 August 1984. A cura di Landsberg P. T. 1922-. New York: Pergamon Press, 1985.

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Rao, C. N. R. 1934- e Mott, N. F. Sir, 1905-, a cura di. Metal-insulator transitions revisited. London, UK: Taylor & Francis, 1995.

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Fritzsche, Hellmut. Localization and Metal-Insulator Transitions. Boston, MA: Springer US, 1985.

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Fritzsche, Hellmut, e David Adler, a cura di. Localization and Metal-Insulator Transitions. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8.

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Hellmut, Fritzsche, Adler David 1935-1987 e Mott, N. F. Sir, 1905-, a cura di. Localization and metal-insulator transitions. New York: Plenum Press, 1985.

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Capitoli di libri sul tema "Metal insulator transition"

Kramer, Bernhard, Gerd Bergmann e Yvan Bruynseraede. "Metal-Insulator Transition". In Springer Series in Solid-State Sciences, 257–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82516-3_30.

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Minomura, Shigeru. "Pressure-Induced Insulator-Metal Transition". In Localization and Metal-Insulator Transitions, 63–76. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_6.

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Okuma, S., F. Komori e S. Kobayashi. "The Metal-Insulator Transition in Disordered Metals". In Springer Proceedings in Physics, 78–82. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73554-7_14.

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Hensel, F., S. Jüngst, F. Noll e R. Winter. "Metal-Nonmetal Transition and the Critical Point Phase Transition in Fluid Cesium". In Localization and Metal-Insulator Transitions, 109–17. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_10.

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Redmer, Ronald, e Bastian Holst. "Metal–Insulator Transition in Dense Hydrogen". In Metal-to-Nonmetal Transitions, 63–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-03953-9_4.

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Turkevich, Leonid A. "Exciton Condensation and the Mott Transition". In Localization and Metal-Insulator Transitions, 259–68. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_20.

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Economou, E. N., e A. C. Fertis. "Metal — Insulator Transition in Doped Semiconductors". In Localization and Metal-Insulator Transitions, 269–80. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_21.

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Itoh, Kohei M. "Metal-Insulator Transition in Doped Semiconductors". In Springer Proceedings in Physics, 128–31. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_54.

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Milde, F., R. A. Römer e M. Schreiber. "Metal-insulator transition in anisotropic systems". In Springer Proceedings in Physics, 148–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_63.

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Markoš, P. "Universality of the Metal-Insulator Transition". In Quantum Dynamics of Submicron Structures, 99–102. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0019-9_8.

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Atti di convegni sul tema "Metal insulator transition"

GRENET, T. "METAL-INSULATOR TRANSITION IN QUASICRYSTALS". In Proceedings of the Spring School on Quasicrystals. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812793201_0015.

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Gorelov, B. M., V. V. Dyakin, K. P. Konin e D. V. Morozovska. "Metal-insulator transition in barium dioxide". In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.835926.

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Kim, Inho, Deok-Kyu Kim e Eun Soo Lee. "Insulator-Metal Transition Simulation of Nonideal Plasmas". In IEEE Conference Record - Abstracts. 2005 IEEE International Conference on Plasma Science. IEEE, 2005. http://dx.doi.org/10.1109/plasma.2005.359079.

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Sachdev, Subir. "Local moments near the metal-insulator transition". In Frontiers in condensed matter theory. AIP, 1990. http://dx.doi.org/10.1063/1.39735.

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SHIMA, HIROYUKI, e TSUNEYOSHI NAKAYAMA. "METAL-INSULATOR TRANSITION IN 1D CORRELATED DISORDER". In Proceedings of the 1st International Symposium on TOP2005. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812772879_0043.

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Mandrus, D., L. Forro, C. Kendziora e L. Mihaly. "Metal-insulator transition in doped Bi2Sr2Ca1−xYxCu2O8". In Superconductivity and its applications. AIP, 1992. http://dx.doi.org/10.1063/1.42112.

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Krishnan, M., Ashish Mishra, Durgesh Singh, Venkatesh R., Mohan Gangrade e V. Ganesan. "Metal insulator transition in nickel substituted FeSi". In DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5029005.

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Osofsky, Michael S., Robert J. Soulen, Jr., J. H. Claassen, Huengsoo J. Kim e James S. Horwitz. "Enhanced superconductivity near the metal-insulator transition". In International Symposium on Optical Science and Technology, a cura di Ivan Bozovic e Davor Pavuna. SPIE, 2002. http://dx.doi.org/10.1117/12.455491.

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Qu, Luman, Marton Voros e Gergely T. Zimanyi. "Metal-insulator transition in nanoparticle solar cells". In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7750004.

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Charipar, Nicholas A., Heungsoo Kim, Nicholas Bingham, Ryan Suess, Kristin M. Charipar, Scott A. Mathews, Raymond C. Y. Auyeung e Alberto Piqué. "Harnessing the metal-insulator transition for tunable metamaterials". In Metamaterials, Metadevices, and Metasystems 2017, a cura di Nader Engheta, Mikhail A. Noginov e Nikolay I. Zheludev. SPIE, 2017. http://dx.doi.org/10.1117/12.2275864.

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Rapporti di organizzazioni sul tema "Metal insulator transition"

Hood, R. Q., e G. Galli. Insulator to Metal Transition in Fluid Hydrogen. Office of Scientific and Technical Information (OSTI), giugno 2003. http://dx.doi.org/10.2172/15003860.

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Bastea, M., e R. Cauble. Metal-Insulator Transition in Li and LiH - Final Report. Office of Scientific and Technical Information (OSTI), gennaio 2002. http://dx.doi.org/10.2172/15008095.

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Kohlman, R. S., e A. J. Epstein. Insulator-Metal Transition and Inhomogeneous Metallic State in Conducting Polymers. Fort Belvoir, VA: Defense Technical Information Center, settembre 1997. http://dx.doi.org/10.21236/ada330213.

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Cobden, David H. Mesoscopic Effects and Metal-Insulator Transition in Vanadium Oxide Nanowires. Fort Belvoir, VA: Defense Technical Information Center, luglio 2012. http://dx.doi.org/10.21236/ada579160.

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Neumeier, J. J., M. F. Hundley, A. L. Cornelius e K. Andres. Volume-based considerations for the metal-insulator transition of CMR oxides. Office of Scientific and Technical Information (OSTI), marzo 1998. http://dx.doi.org/10.2172/658143.

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Averitt, Richard D. Conductivity Dynamics of the Metal to Insulator Transition in EuNiO3/LANiO3 Superlattices. Fort Belvoir, VA: Defense Technical Information Center, gennaio 2016. http://dx.doi.org/10.21236/ad1008800.

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Sarachik, Myriam P. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report. Office of Scientific and Technical Information (OSTI), febbraio 2015. http://dx.doi.org/10.2172/1170416.

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Derakhshan, Shahab, e Yohannes Abate. Near-Field Nanoscopy of Metal-Insulator Phase Transitions Towards Synthesis of Novel Correlated Transition Metal Oxides and Their Interaction with Plasmon Resonances. Fort Belvoir, VA: Defense Technical Information Center, gennaio 2016. http://dx.doi.org/10.21236/ad1007386.

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Medarde, M., F. Fauth, A. Furrer, P. Lacorre e K. Conder. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites. Office of Scientific and Technical Information (OSTI), agosto 1998. http://dx.doi.org/10.2172/290921.

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Regan, Michael J. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys. Office of Scientific and Technical Information (OSTI), dicembre 1993. http://dx.doi.org/10.2172/10127772.

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