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Articoli di riviste sul tema "Metal-Assisted chemical etching of silicon"
Li, Yu Ping, Xiu Hua Chen, Wen Hui Ma, Shao Yuan Li, Ping Bi, Xue Mei Liu e Fu Wei Xiang. "Research on Preparation of Porous Silicon Powders from Metallurgical Silicon Material". Materials Science Forum 847 (marzo 2016): 97–102. http://dx.doi.org/10.4028/www.scientific.net/msf.847.97.
Testo completoCao, Dao Tran, Cao Tuan Anh e Luong Truc Quynh Ngan. "Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching". Journal of Nanoelectronics and Optoelectronics 15, n. 1 (1 gennaio 2020): 127–35. http://dx.doi.org/10.1166/jno.2020.2684.
Testo completoSt John, Christopher, Christian L. Arrington, Jonathan Coleman, Mason Risley e David Bruce Burckel. "Metasurface Optic Features Using Metal-Assisted Chemical Etching (MACE)". ECS Meeting Abstracts MA2024-02, n. 16 (22 novembre 2024): 1652. https://doi.org/10.1149/ma2024-02161652mtgabs.
Testo completoZhang, Lansheng, Xiaoyang Chu, Feng Tian, Yang Xu e Huan Hu. "Bio-Inspired Hierarchical Micro-/Nanostructures for Anti-Icing Solely Fabricated by Metal-Assisted Chemical Etching". Micromachines 13, n. 7 (7 luglio 2022): 1077. http://dx.doi.org/10.3390/mi13071077.
Testo completoChoi, Keorock, Yunwon Song, Ilwhan Oh e Jungwoo Oh. "Catalyst feature independent metal-assisted chemical etching of silicon". RSC Advances 5, n. 93 (2015): 76128–32. http://dx.doi.org/10.1039/c5ra15745e.
Testo completoLi, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth e Ching P. Wong. "Uniform Metal-assisted Chemical Etching and the Stability of Catalysts". MRS Proceedings 1801 (2015): 1–8. http://dx.doi.org/10.1557/opl.2015.574.
Testo completoBerezhanskyi, Ye I., S. I. Nichkalo, V. Yu Yerokhov e A. A. Druzhynin. "Nanotexturing of Silicon by Metal-Assisted Chemical Etching". Фізика і хімія твердого тіла 16, n. 1 (15 marzo 2015): 140–44. http://dx.doi.org/10.15330/pcss.16.1.140-144.
Testo completoYang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu e Ya Hu. "Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells". Journal of Physics: Conference Series 2076, n. 1 (1 novembre 2021): 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.
Testo completoLai, Chang Quan, Wen Zheng, W. K. Choi e Carl V. Thompson. "Metal assisted anodic etching of silicon". Nanoscale 7, n. 25 (2015): 11123–34. http://dx.doi.org/10.1039/c5nr01916h.
Testo completoIatsunskyi, Igor, Valentin Smyntyna, Nykolai Pavlenko e Olga Sviridova. "Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching". ISRN Optics 2012 (1 novembre 2012): 1–6. http://dx.doi.org/10.5402/2012/958412.
Testo completoTesi sul tema "Metal-Assisted chemical etching of silicon"
MAGAGNA, STEFANO. "Thermoelectric nanostructured silicon obtained by Metal-assisted Chemical Etching". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/312087.
Testo completoThe necessity of sustainability in energy production and the continuous increasing of global warming, which leads to tremendous consequences, are among the most complicated challenges facedby humanity along its history. Reduction of the energy wastes anda strong energetic efficiency improvement are the most relevant solutions proposed, since nearly the 60 % of the energy generated around the world is wasted as heat. The possibility to recover even a small amount of this wasted energy could lead to a significant decrease of CO2 emission. Thermoelectric devices can actively contribute to this cause sincethey allow to generate electrical power even with small temperature gradients and without moving parts. Their efficiency is described by the figure of merit zT. Therefore, an ideal thermoelectric material should have, at the same time,good electrical properties combined to a low thermal conductivity ,a difficult challenge considering that, normally, a good electrical conductor is also a good thermal conductor. However, property modification at nanoscale opened a new pathway in thermoelectric materials research. The work of this PhD thesis is focused on the nanostructuration of a non-toxic, earth-abundant material such as Silicon. Due to the high thermal conductivity, bulk silicon is not suitable for thermoelectric application. Anyway, nanostructuration offers efficient and innovative ways to lower silicon thermal conductivity and to open novel opportunities to its usage as thermoelectric material. In the first part, the mechanism of Silver-assisted Chemical etching (SaCE), a one-step method chosen for the production of silicon NW will be presented. Particularly, the results of anextended analysis of the interplay among doping level and type of silicon, nanowire morphology and the parameters controlling thechemistry of SaCE will be shown. SaCE occurs at the outer substrate surface as a result of Si extrusion by sinking self-propelled Ag particles which causes Si flakes to be exposed at the outer solution-substrate. Here, the etching actually occurs through either 2- or 4-electron electrochemical oxidation of Si. NW surface is found to be either porous (potholed) or crystalline depending on the predominant electrochemical process. The prevalence of either 2- or4-electron processes is controlled by the material resistivity andtherefore by the voltage sensed by silicon. Two-electron processes occur at low voltages for conductive, heavily doped Si,and causes the formation of superficially potholed NWs. Four-electron processes occur for weakly doped Si and lead to fully crystalline NWs.Secondly, the production, by means of SaCE, and the characterization of a recently introduced category of material, the so-called Nanophononic Metamaterial (NPM), will be presented. This material is composed by an array of silicon nanopillars on top of a silicon thin film. The hybridization of the locally-resonant phonon modes introduced by the NWs with membrane phonon modes leads to a thermal conductivity reduction. NPM demonstrates to retain electrical and thermal conductivity of the wafer from which it is etched. Preliminary thermal measurements showed a thermal conductivity reduction of 2/3 with respect of bulk silicon. In the third part, the characterization of heavily doped Si NWs arrays, produced by SaCE, will be presented. This kind of arrays shows very low thermal conductivity (around 2 W/ (m K)) and a Seebeck coefficient comparable with that of heavily doped bulk silicon. Anyway, due to the presence of the substrate (very thick if compared with NWs length), it is complicated to have a precise measurement of NW resistivity. To overcome this issue, a new structure exclusively made of NWs and free from any substrate contribution will be presented.
Magagna, Stefano. "Thermoelectric nanostructured silicon obtained by metal-assisted chemical etching". Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0166.
Testo completoMy thesis project involves the preparation of materials based on silicon nanowires, synthetically exploiting solution: metal-assisted chemical etching (MaCE). I have been able to fully characterize sinc emorphological point of view the different nanowires obtained from substrates at different dopant concentrations, different dopant species. The temperature of attack, as well as the concentration of Ag + in the solution. The results allowed to open a reflection and an advanced theory on different aspects engraving, from electronic transfer to localization of the attack. MaCE allows the synthesis of ametamaterial, introduced in 2014 by Davis et al, consisting of from a silicon membrane on which a network of silicon nanowires and definition of "nanophononic metamaterial (NPM) ". NPM with different membrane thicknesses were produced from a 200 micron thick double-sided polished wafer, on which they were produced the nanowires by MaCE, on both sides. By choosing the length of the nanowires, it was possible to adjust the thickness of the residual membrane. Characterizations electric and thermoelectric have shown how the electronic compartment of the NPM is maintained. The thermal characterization of a membrane with a thickness of 62 micron has obtained a thermal conductivity equal to 36% of that of bulk silicon. This material therefore allows you to decouple the electrical conductivity (regulated bymembrane characteristics) thermal conductivity (controlled by the presence of nanowires), which makes it ideal for thermoelectric applications
Ngqoloda, Siphelo. "Vertically aligned silicon nanowires synthesised by metal assisted chemical etching for photovoltaic applications". University of the Western Cape, 2015. http://hdl.handle.net/11394/4872.
Testo completoOne-dimensional silicon nanowires (SiNWs) are promising building blocks for solar cells as they provide a controlled, vectorial transport route for photo-generated charge carriers in the device as well as providing anti-reflection for incoming light. Two major approaches are followed to synthesise SiNWs, namely the bottom-up approach during vapour-liquid-solid mechanism which employs chemical vapour deposition techniques. The other method is the top-down approach via metal assisted chemical etching (MaCE). MaCE provides a simple, inexpensive and repeatable process that yields radially and vertically aligned SiNWs in which the structure is easily controlled by changing the etching time or chemical concentrations. During MaCE synthesis, a crystalline silicon (c-Si) substrate covered with metal nanoparticles (catalyst) is etched in a diluted hydrofluoric acid solution containing oxidising agents. Since the first report on SiNWs synthesised via MaCE, various publications have described the growth during the MaCE process. However lingering questions around the role of the catalyst during formation, dispersion and the eventual diameter of the nanowires remain. In addition, very little information pertaining to the changes in crystallinity and atomic bonding properties of the nanowires post synthesis is known. As such, this study investigates the evolution of vertical SiNWs from deposited silver nanoparticles by means of in-depth electron microscopy analyses. Changes in crystallinity during synthesis of the nanowires are probed using x-ray diffraction (XRD) and transmission electron microscopy (TEM). Deviations in the optical properties are quantified using optical reflectivity measurements by employing ultraviolet-visible (UV-Vis) spectroscopy, whereas the bonding configurations of the nanowires are probed by Raman and Fourier transforms infrared spectroscopy. Diameters of 50 – 200 nm vertical SiNWs were obtained from scanning electron micrographs and nanowires lengths linearly increased with etching time duration from about 130 nm after 30 seconds to over 15 μm after 80 minutes. No diameter modulations along nanowires axial direction and rough nanowires apexes were observed for nanowires obtained at longer etching times. These SiNWs remained crystalline as their bulk single crystalline Si wafers but had a thin amorphous layer on the surface, findings confirmed by TEM, XRD and Raman analysis. Nanowires were found to be partially passivated with oxygen with small traces of hydrogen termination, confirmed with infrared absorption studies. Finally, low optical reflection of less than 10% over visible range compared to an average of 30% for bulk Si were measured depicting an antireflective ability required in silicon solar cells.
Hildreth, Owen James. "Development of metal-assisted chemical etching as a 3D nanofabrication platform". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/49011.
Testo completoKhanyile, Sfiso Zwelisha. "Silicon nanowires by metal-assisted chemical etching and its incorporation into hybrid solar cells". University of Western Cape, 2021. http://hdl.handle.net/11394/8340.
Testo completoThe rapid increase in global energy demand in recent decades coupled with the adverse environmental impact of conventional fuels has led to a high demand for alternative energy sources that are sustainable and efficient. Renewable solar energy technologies have received huge attention in recent decades with the aim of producing highly efficient, safe, flexible and robust solar cells to withstand harsh weather conditions. c-Si has been the material of choice in the development of conventional inorganic solar cells owing to it superior properties, abundance and higher efficiencies. However, the associated high costs of Si processing for solar cells have led to a gravitation towards alternative organic solar cells which are cheaper and easy to process even though they suffer from stability and durability challenges. In this work, combination of both inorganic and organic materials to form hybrid solar cells is one of the approaches adopted in order to address the challenges faced by solar cell development.
Zheng, Wen Ph D. Massachusetts Institute of Technology. "Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching". Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104114.
Testo completoThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 170-177).
Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates. Use of high surface-to-volume ratio structures has been demonstrated as an effective way to increase the electrode area, and therefore to improve the capacitance density, while still keeping the footprint area low. The goal of this thesis was to first develop an understanding of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and efficient energy delivery. Two types of capacitors were investigated: electrostatic metal-oxide-semiconductor (MOS) capacitors for power management, and supercapacitors for energy storage purposes. For both types of devices, enlarged surface area per footprint was achieved by utilizing the arrays of silicon nanowires. Fundamental studies of the roles of metals in metal-assisted chemical etching (MACE) of silicon were conducted. Lithography techniques were used to generate patterns in metal films which when subjected to MACE resulted in formation of ordered arrays of silicon nanowires. Investigation of various metal catalysts showed that Pt is a more active catalyst than Au, while Cu is not stable in the etchant. Tapered silicon nanowires can be generated by adding a layer of Cu between two Au layers, and etching occurs much faster than when a pure Au catalyst is used. While carrying out research on the mechanisms of MACE, we developed a new electrochemical method for formation of arrays of silicon nanowires, metal-assisted anodic etching (MAAE). In this process, the etchant consists of HF alone, and does not include an oxidant. In both processes, HF is used as an etchant. However, in MACE, electronic holes are supplied through reduction of an oxidant (e.g. H₂O₂), while in MAAE, electronic holes are supplied through an external circuit, with anodic contact to either the metal or the silicon. In both contact cases for MAAE, the metal catalyzes the etching process and leads to controlled formation of silicon nanowires, without the need for an oxidant. This discovery, and its analysis, provided new insights into the mechanisms of both MAAE and MACE, and also opened the possibility for use of metal catalyzed electrochemical etching of other materials that cannot survive the HF/oxidant mixture. Processes for fabrication of on-chip capacitors based on silicon nanowires were next developed. We first fabricated on-chip MOS capacitors with nanowire arrays etched using MACE with both single crystal silicon substrates and polycrystalline silicon films. For wires made in both cases, the capacitance density followed a same scaling trend related to their geometries. Epitaxial wafers were used with a post-etch doping process to reduce the series resistance in the devices in order to obtain a better frequency response, as desired for high frequency circuits. To achieve higher capacitance densities for energy storage purposes, we also designed a solid state supercapacitor device based on nanowires etched using MAAE with heavily doped n-type silicon substrates. The silicon nanowires were coated with RuO₂ using atomic layer deposition (ALD) to achieve a high capacitance. In this case, charge is stored through the formation of an electrical double layer and through reversible redox reactions. We showed that the capacitance density of these devices roughly scaled with the increased surface area of silicon nanowire arrays. The solid state supercapacitor achieved a capacitance density of 6.5mF/cm², which is comparable to the best results achieved with other types of on-chip supercapacitors. In contrast with other processes for forming on-chip supercapacitors, the supercapacitors we demonstrated were fabricated using a fully complementary metal-oxide-semiconductor (CMOS) technology compatible process. Moreover, the Si nanowire-based device achieved this high capacitance density without sacrificing power performance compared to the planar device.
by Wen Zheng.
Ph. D.
Xu, Ying. "Fabrication and Characterization of Photodiodes for Silicon Nanowire Applications and Backside Illumination". University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1446313926.
Testo completoМадан, Роман Григорович. "Фотоперетворювачі на основі наноструктурованого кремнію". Bachelor's thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/28855.
Testo completoThe work consists of 55 pages, 4 sections and contains 35 illustrations, 24 tables and 19 sources in the list of references. The actuality of the topic is the interest in the creation of hybrid organic and inorganic photoconductors that have a lower cost than traditional ones. The purpose of the work is to study the volt-ampere characteristics of nanostructured silicon solar cells. Comparison of the characteristics of porous silicon obtained at different times of etching. The object of research is nanostructured silicon solar cells. Subject of research - methods of obtaining and morphology of nanostructured layer of indium and tin oxide, as well as melanine films.
Togonal, Alienor. "Silicon Nanowires for Photovoltaics : from the Material to the Device". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX032/document.
Testo completoSilicon Nanowire (SiNW) based solar cells offer an interesting choice towards low-cost and highly efficient solar cells. Indeed solar cells based on SiNWs benefit from their outstanding optical properties such as extreme light trapping and very low reflectance. In this research project, we have fabricated disordered SiNWs using a low-cost top-down approach named the Metal-Assisted-Chemical-Etching process (MACE). The MACE process was first optimized to reduce the strong agglomeration observed at the top-end of the SiNWs by tuning the wettability properties of both the initial substrate and the SiNWs surface. By combining the MACE process with the nanosphere lithography, we have also produced ordered SiNW arrays with an accurate control over the pitch, diameter and length. The optical properties of these SiNW arrays were then investigated both theoretically and experimentally in order to identify the geometrical configuration giving the best optical performance. Disordered and ordered SiNW arrays have been integrated into two types of solar cells: heterojunction with intrinsic thin layer (HIT) and hybrid devices. SiNW based HIT devices were fabricated by RF-PECVD and the optimization of the process conditions has allowed us to reach efficiency as high as 12.9% with excellent fill factor above 80%. Hybrid solar cells based on the combination of SiNWs with an organic layer have also been studied and characterized. The possible transfer of this concept to the thin film technology is finally explored
Мадан, Роман Григорович. "Органо-неорганічні гібриди на основі меланіну". Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/38762.
Testo completoThe relevance of the topic is the interest in creating hybrid organic and inorganic thin-film solar cells, which have a lower cost than traditional solar cells. The aim of the work is to determine the optimal technological conditions for the creation of organic-inorganic structures for photovoltaic applications. The subject of research - organo-inorganic structures based on silicon and melanin.
Libri sul tema "Metal-Assisted chemical etching of silicon"
Micro- and Nano-Fabrication by Metal Assisted Chemical Etching. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-03943-846-4.
Testo completoMicro- and Nano-Fabrication by Metal Assisted Chemical Etching. Mdpi AG, 2021.
Cerca il testo completoMicromachining using electrochemical discharge phenomenon: Fundamentals and application of spark assisted chemical engraving. Norwich, NY, USA: W. Andrew, 2009.
Cerca il testo completoCapitoli di libri sul tema "Metal-Assisted chemical etching of silicon"
Lee, Seyeong, Dong-Hee Kang, Seong-Min Kim e Myung-Han Yoon. "Vertical silicon nanostructures via metal-assisted chemical etching". In Silicon Nanomaterials Sourcebook, 169–92. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-8.
Testo completoToan, Nguyen Van, e Takahito Ono. "Capacitive Silicon Resonators with Narrow Gaps Formed by Metal-Assisted Chemical Etching". In Capacitive Silicon Resonators, 82–98. Boca Raton, FL : CRC Press/Taylor & Francis Group, [2020]: CRC Press, 2019. http://dx.doi.org/10.1201/9780429266010-7.
Testo completoIvanov, B., D. Philipov, V. Shanov e G. Peev. "Laser Induced Chemical Etching of Silicon with SF6 Using a Copper Bromide Vapour Laser". In Pulsed Metal Vapour Lasers, 383–88. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_41.
Testo completoSharma, Virender, Abhishek Verma, Vinod Kumar Jain e Daisy Verma. "Antireflection Properties of Multi-crystalline Black Silicon with Acid Textured Surfaces Using Two Step Metal Assisted Chemical Etching". In Springer Proceedings in Physics, 23–28. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_3.
Testo completoHadjersi, T., N. Gabouze, A. Ababou, M. Boumaour, W. Chergui, H. Cheraga, S. Belhouse e A. Djeghri. "Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon". In Materials Science Forum, 139–44. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-962-8.139.
Testo completoLévy-Clément, Claude. "Porous Silicon Formation by Metal Nanoparticle-Assisted Etching". In Handbook of Porous Silicon, 1–16. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04508-5_5-1.
Testo completoLévy-Clément, Claude. "Porous Silicon Formation by Metal Nanoparticle-Assisted Etching". In Handbook of Porous Silicon, 49–66. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05744-6_5.
Testo completoLévy-Clément, Claude. "Porous Silicon Formation by Metal Nanoparticle-Assisted Etching". In Handbook of Porous Silicon, 61–78. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_5.
Testo completoHildreth, Owen, e C. P. Wong. "Nano-metal-Assisted Chemical Etching for Fabricating Semiconductor and Optoelectronic Devices". In Materials for Advanced Packaging, 879–922. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45098-8_21.
Testo completoIrreraa, Alessia, Giorgia Franzòb, Barbara Fazioa, Simona Boninellib, Paolo Musumecic, Francesco Priolob, c, d e Fabio Iaconab. "Chapter 6 Room Temperature Light Emission from Silicon Nanowires Fabricated by a Metal-Assisted Wet Etching Process". In Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed, 161–90. Penthouse Level, Suntec Tower 3, 8 Temasek Boulevard, Singapore 038988: Pan Stanford Publishing Pte. Ltd., 2016. http://dx.doi.org/10.1201/9781315364797-7.
Testo completoAtti di convegni sul tema "Metal-Assisted chemical etching of silicon"
Cho, Hyein, Yebin Ahn, Sang Beom Hong, Soohyeok Park, Yejin Han, Geonhwi Kim, Eunjeong Song et al. "Advanced Metal-Assisted Chemical Etching Using HF Vapor and Ozone for MEMS Process". In 2024 IEEE International Electron Devices Meeting (IEDM), 1–4. IEEE, 2024. https://doi.org/10.1109/iedm50854.2024.10873380.
Testo completoXu, Hongbo, Jianqiang Wang, Hongyun Zhao e Mingyu Li. "Silicon Vias Fabricatied by Metal-Assisted Chemical Etching". In 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202901.
Testo completoKoval, Viktoriia, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada e Dmytro Kulish. "Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application". In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783506.
Testo completoToan, N. V., M. Toda e T. Ono. "High aspect silicon structures using metal assisted chemical etching". In 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2016. http://dx.doi.org/10.1109/nano.2016.7751348.
Testo completoXu, Ying, Chuan Ni e Andrew Sarangan. "Silicon nanowire photodetectors made by metal-assisted chemical etching". In SPIE Nanoscience + Engineering, a cura di Eva M. Campo, Elizabeth A. Dobisz e Louay A. Eldada. SPIE, 2016. http://dx.doi.org/10.1117/12.2238480.
Testo completoJana, S., e S. R. Bhattacharyya. "Metal assisted chemical etching for light emitting silicon nanowires". In PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810212.
Testo completoSong-Ting Yang, Chien-Ting Liu, Subramani Thiyagu, Chen-Chih Hsueh e Ching-Fuh Lin. "Fabrication of Silicon thin film by metal-assisted chemical etching". In 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2014. http://dx.doi.org/10.1109/nano.2014.6967974.
Testo completoLi, Xiaopeng, Alexander Sprafke, Stefan Schweizer e Ralf B. Wehrspohn. "Purifying metallurgical silicon to solar grade silicon by metal-assisted chemical etching". In Freeform Optics. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/freeform.2013.jm3a.8.
Testo completoIatsunskyi, Igor, Stefan Jurga, Valentyn Smyntyna, Mykolai Pavlenko, Valeriy Myndrul e Anastasia Zaleska. "Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching". In SPIE Photonics Europe, a cura di Christophe Gorecki, Anand K. Asundi e Wolfgang Osten. SPIE, 2014. http://dx.doi.org/10.1117/12.2051489.
Testo completoSmyntyna, V. A., I. R. Iatsunskyi, O. V. Sviridova e N. N. Pavlenko. "Photoluminescence Properties of Nanostructured Silicon Fabricated by Metal-assisted Chemical Etching". In Frontiers in Optics. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/fio.2012.ftu1a.6.
Testo completoRapporti di organizzazioni sul tema "Metal-Assisted chemical etching of silicon"
Ervin, Matthew H., e Brian Isaacson. Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon. Fort Belvoir, VA: Defense Technical Information Center, novembre 2015. http://dx.doi.org/10.21236/ada623559.
Testo completo