Letteratura scientifica selezionata sul tema "Matériaux de Van der Waals"
Cita una fonte nei formati APA, MLA, Chicago, Harvard e in molti altri stili
Consulta la lista di attuali articoli, libri, tesi, atti di convegni e altre fonti scientifiche attinenti al tema "Matériaux de Van der Waals".
Accanto a ogni fonte nell'elenco di riferimenti c'è un pulsante "Aggiungi alla bibliografia". Premilo e genereremo automaticamente la citazione bibliografica dell'opera scelta nello stile citazionale di cui hai bisogno: APA, MLA, Harvard, Chicago, Vancouver ecc.
Puoi anche scaricare il testo completo della pubblicazione scientifica nel formato .pdf e leggere online l'abstract (il sommario) dell'opera se è presente nei metadati.
Articoli di riviste sul tema "Matériaux de Van der Waals"
Arunan, E. "van der Waals". Resonance 15, n. 7 (luglio 2010): 584–87. http://dx.doi.org/10.1007/s12045-010-0043-3.
Testo completoHan, Jianing. "Two-Dimensional Six-Body van der Waals Interactions". Atoms 10, n. 1 (24 gennaio 2022): 12. http://dx.doi.org/10.3390/atoms10010012.
Testo completoBernasek, Steven L. "Van der Waals rectifiers". Nature Nanotechnology 8, n. 2 (6 gennaio 2013): 80–81. http://dx.doi.org/10.1038/nnano.2012.242.
Testo completoGeim, A. K., e I. V. Grigorieva. "Van der Waals heterostructures". Nature 499, n. 7459 (luglio 2013): 419–25. http://dx.doi.org/10.1038/nature12385.
Testo completoLevitov, L. S. "Van Der Waals' Friction". Europhysics Letters (EPL) 8, n. 6 (15 marzo 1989): 499–504. http://dx.doi.org/10.1209/0295-5075/8/6/002.
Testo completoCapozziello, S., S. De Martino e M. Falanga. "Van der Waals quintessence". Physics Letters A 299, n. 5-6 (luglio 2002): 494–98. http://dx.doi.org/10.1016/s0375-9601(02)00753-3.
Testo completoBärwinkel, Klaus, e Jürgen Schnack. "van der Waals revisited". Physica A: Statistical Mechanics and its Applications 387, n. 18 (luglio 2008): 4581–88. http://dx.doi.org/10.1016/j.physa.2008.03.019.
Testo completoWu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang et al. "The fabrication and physical properties of two-dimensional van der Waals heterostructures". Acta Physica Sinica 71, n. 4 (2022): 048502. http://dx.doi.org/10.7498/aps.71.20212033.
Testo completoLevelt Sengers, J. M. H., e J. V. Sengers. "van der Waals fund, van der Waals laboratory and Dutch high-pressure science". Physica A: Statistical Mechanics and its Applications 156, n. 1 (marzo 1989): 1–14. http://dx.doi.org/10.1016/0378-4371(89)90107-6.
Testo completoAo, Hong Rui, Ming Dong, Xi Chao Wang e Hong Yuan Jiang. "Analysis of Pressure Distribution on Head Disk Air Bearing Slider Involved Van der Waals Force". Applied Mechanics and Materials 419 (ottobre 2013): 111–16. http://dx.doi.org/10.4028/www.scientific.net/amm.419.111.
Testo completoTesi sul tema "Matériaux de Van der Waals"
Henck, Hugo. "Hétérostructures de van der Waals à base de Nitrure". Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS319/document.
Testo completoThis thesis is at the interface between the study of nitride based compounds and the emerging structures formed by atomically thin bi-dimensional (2D) materials. This work consists in the study of the hybridization of the properties of large band gap materials from the nitride family and the mechanical, electronic and optical performances of layered materials, recently isolated at the monolayer level, highly considered due to their possible applications in electronics devices and fundamental research. In particular, a study of electronics and structural properties of stacked layered materials and 2D/3D interfaces have been realised with microscopic and spectroscopic means such as Raman, photoemission and absorption spectroscopy.This work is firstly focused on the structural and electronic properties of hexagonal boron nitride (h-BN), insulating layered material with exotic optical properties, essential in in the purpose of integrating these 2D materials with disclosed performances. Using graphene as an ideal substrate in order to enable the measure of insulating h-BN during photoemission experiments, a study of structural defects has been realized. Consequently, the first direct observation of multilayer h-BN band structure is presented in this manuscript. On the other hand, a different approach consisting on integrating bi-dimensional materials directly on functional bulk materials has been studied. This 2D/3D heterostructure composed of naturally N-doped molybdenum disulphide and intentionally P-doped gallium nitride using magnesium has been characterised. A charge transfer from GaN to MoS2 has been observed suggesting a fine-tuning of the electronic properties of such structure by the choice of materials.In this work present the full band alignment diagrams of the studied structure allowing a better understanding of these emerging systems
Abdukayumov, Khasan. "Conversion spin-charge dans les matériaux 2D et les hétérostructures de van der Waals". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALY016.
Testo completoAfter the first-time successful exfoliation of graphene in 2004 many more 2D materials have been studied for various applications, including spintronics, a field that exploits the spin degree of freedom of electrons as opposed to the charge in electronics. The cornerstone of fundamental spintronics is the spin current-charge current interconversion phenomena, shortly known as spin-charge conversion (SCC). 2D materials are characterized by weak van der Waals (vdW) interaction between the layers, thus, relaxing the lattice-matching requirement for the epitaxy, enabling to grow complex vdW heterostructures. This can also offer new growth platforms not easily accessible by conventional 3D materials, and, due to the weak nature of the vdW forces, grown films can be transferred onto another substrate. Moreover, 2D materials show thickness dependent band structure and various heterostructures can be formed, opening up a vast number of possibly new physics for spintronic applications that can be explored. However, most of the current research is based on exfoliated flakes that are at most tens of µm in size, limiting their possible implementation for applications. In this thesis, I present large-area growth of high quality 2D materials and vdW heterostructures by molecular beam epitaxy (MBE) and study SCC effects by spintronic THz emission probed by THz time domain spectroscopy. First, CoFeB/PtSe2 heterostructures with varying the thickness of PtSe2 were studied and a transition from the inverse Rashba-Edelstein effect in a few monolayers (ML) to the inverse spin Hall effect in thicker films was observed. This is the first time a material showed such a transition. The second system was PtSe2/MoSe2 bilayer where we observed a hybridized electronic band showing an opposite spin texture to that of PtSe2. By this, we could demonstrate the possibility to reverse the sign of the inverse Rashba-Edelstein effect by inserting a single MoSe2 layer opening up a new route to modulate SCC intensity and sign in vdW heterostructures with monolayer control. Finally, SCC in few layer PtSe2/MoSe2 was investigated as a function of an external electric field either variable or remanent by proximity with a 3D ferroelectric material. Indeed, this vdW heterostructure is semiconducting with possibly larger SCC efficiency in electronic bands far from the Fermi level accessible through the application of an electric field. Those findings push us to explore the world of 2D materials even more by various means, such as electric fields, and bring 2D materials closer to spintronic device applications
Nayak, Goutham. "Amélioration des propriétés physiques de matériaux de basse-dimensionnalité par couplage dans des hétérostructures Van der Waals". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY084/document.
Testo completoThe extraordinary intrinsic properties of low dimensional materials depend highly on the environment they are subjected to. Hence they need to be prepared, processed and characterized without defects. In this thesis, I discuss about how to control the environment of low dimensional nanomaterials such as graphene, MoS2 and carbon nanotubes to preserve their intrinsic physical properties. Novel solutions for property enhancements are discussed in depth. In the first part, we fabricate state-of-the-art, edge-contacted, graphene Van der Waals(VdW) heterostructuredevices encapsulated in hexagonal-boron nitride(hBN), to obtain ballistic transport. We use a technique based on 1/f-noise measurements to probe bulk and edge transport during integer and fractional Quantum Hall regimes. In the second part, the same fabrication concept of VdW heterostructures has been extended to encapsulate monolayer MoS2 in hBN to improve optical properties. In this regard we present an extensive study about the origin and characterization of intrinsic and extrinsic defects and their affect on optical properties. Further, we describe a technique to probe the interlayer coupling along with the generation of light with spatialresolution below the diffraction limit of light. Finally, we discuss a natural systemic process to enhance the mechanical properties of natural polymer silk using HipCO-made single walled carbon nanotubes as a food for silkworm
Islam, Md Samiul. "Coherent ultrafast spectroscopy of excitons in Van der Waals materials". Electronic Thesis or Diss., Strasbourg, 2024. http://www.theses.fr/2024STRAE011.
Testo completoIn this thesis, based on an original development of ultrafast four wave mixing microscopy, the firstdirect measurement of excitonic coherence dynamics in rhenium disulfide was obtained. Theseresults demonstrated a unique robustness of excitonic coherence compared to other Transition metal dichalcogenide (TMD) materials. The potential for controlling the intrinsic properties of excitons in van der Waals (vdW) materials was explored in innovative two-dimensional assemblies. In particular, the impact of graphene in the excitonic environment of a heterostructure on the dynamic properties of these excitons has been investigated. Finally, a significant step towards understanding and engineering the optical properties of single photon emitting defects in hBN has been achieved
Lorchat, Étienne. "Optical spectroscopy of heterostructures based on atomically-thin semiconductors". Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAE035.
Testo completoDuring this thesis, we have fabricated and studied by optical spectroscopy, van der Waals heterostructures composed of semiconductor monolayers (transition metal dichalcogenides, TMD) coupled to a graphene monolayer or to a plasmonic resonator. We have observed significant changes in the dynamics of the TMD optically excited states (excitons) when it is in direct contact with graphene. Graphene neutralizes the TMD monolayer and enables non-radiative transfer of excitons within less than a few picoseconds. This energy transfer process may be accompanied by a considerably less efficient, extrinsic photodoping. The reduced lifetime of TMD excitons in the presence of graphene has been exploited to show that their valley pseudo-spin maintains a high degree of polarization and coherence up to room temperature. Finally, by strongly coupling TMD excitons to the modes of a geometric phase plasmonic resonator, we have demonstrated, at room temperature, that the momentum of the resulting chiral polaritons (chiralitons) is locked to their valley pseudo-spin
Di, Felice Daniela. "Electronic structure and transport in the graphene/MoS₂ heterostructure for the conception of a field effect transistor". Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS267/document.
Testo completoThe isolation of graphene, a single stable layer of graphite, composed by a plane of carbon atoms, demonstrated the possibility to separate a single layer of atomic thickness, called bidimensional (2D) material, from the van der Waals (vdW) solids. Thanks to their stability, 2D materials can be used to form vdW heterostructures, a vertical stack of different 2D crystals maintained together by the vdW forces. In principle, due to the weakness of the vdW interaction, each layer keeps its own global electronic properties. Using a theoretical and computational approach based on the Density Functional Theory (DFT) and Keldish-Green formalism, we have studied graphene/MoS₂ heterostructure. In this work, we are interested in the specific electronic properties of graphene and MoS₂ for the conception of field effect transistor: the high mobility of graphene as a basis for high performance transistor and the gap of MoS₂ able to switch the device. First, the graphene/MoS₂ interface is electronically characterized by analyzing the effects of different orientations between the layers on the electronic properties. We demonstrated that the global electronic properties as bandstructure and Density of State (DOS) are not affected by the orientation, whereas, by mean of Scanning Tunneling Microscope (STM) images, we found that different orientations leads to different local DOS. In the second part, graphene/MoS₂ is used as a very simple and efficient model for Field Effect Transistor. The role of the vdW heterostructure in the transistor operation is analyzed by stacking additional and alternate graphene and MoS₂ layers on the simple graphene/MoS₂ interface. We demonstrated that the shape of the DOS at the gap band edge is the fundamental parameter in the switch velocity of the transistor, whereas the additional layers do not improve the transistor behavior, because of the independence of the interfaces in the vdW heterostructures. However, this demonstrates the possibility to study, in the framework of DFT, the transport properties of more complex vdW heterostructures, separating the single interfaces and reducing drastically the calculation time. The 2D materials are also studied in the role of a tip for STM and Atomic Force Microscopy (AFM). A graphene-like tip, tested on defected MoS₂, is compared with a standard copper tip, and it is found to provide atomic resolution in STM images. In addition, due to vdW interaction with the sample, this tip avoids the contact effect responsible for the transfer of atoms between the tip and the sample. Furthermore, the analysis of defects can be very useful since they induce new peaks in the gap of MoS₂: hence, they can be used to get a peak of current representing an interesting perspective to improve the transistor operation
Vergnaud, Céline. "Optimisation de la croissance de MoSe2 - WSe2 par épitaxie de Van der Waals pour la valleytronique". Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY038.
Testo completoThe purpose of this thesis is to optimize growth by molecular beam epitaxy in the van der Waals regime of two-dimensional (2D) semiconductor layers of transition metal diselenides (MoSe2, WSe2) for magneto-optical and electric studies. This optimization involves improving the crystallographic quality of the layers over large areas by adjusting the growth parameters (temperature and flux). In particular, the control of the surface state of the substrate is decisive on the growth mechanisms of these layers. The development of these low-dimensional materials required the use of advanced characterization techniques (Grazing incidence X-ray diffraction, High Resolved Transmission Electronic Microscopy, ect). In this thesis, we focused on two specific substrates : silicon oxide and mica. They both have the particularity of being insulating and inert from an electronic point of view, which is essential to probe the optical and electrical intrinsic properties of 2D layers. Finally, we developed electrical doping (p doping) for microelectronics and magnetic (Mn doping) for valleytronics
Touhari, Françoise. "Etude de l'interaction de Van der Waals en microscopie à force atomique. Simulation numérique d'images de nanostructures et effet de la nature chimique des matériaux". Montpellier 2, 1998. http://www.theses.fr/1998MON20060.
Testo completoWang, Hangtian. "Interfacial Engineering of the Magnetism in 2D Magnets, Topological Insulators, and Their Heterostructures". Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0206.
Testo completoWith the critical node of integrated circuits (IC) entering the 1 nm stage, traditional three-dimensional materials cannot maintain their original physical properties, and thus cannot meet the needs of IC manufacturing processes. Meanwhile, the shrinking line width also introduces an inevitable increase in static power consumption. Therefore, researching new materials and new technologies to break through the "Size Wall" and "Power Wall" has become a crucial direction in the IC industry. As a new member of the two-dimensional (2D) material family, the 2D magnets can maintain its long-range magnetic order at the atomic scale with its physical properties easily controlled by external stimuli, which provides an ideal platform for the high-density and low-power spintronic devices. However, due to the dimensional effect, 2D magnetism cannot exist at high temperatures. Although several methods can enhance the Curie temperature (Tc) of 2D magnets (such as doping, ion intercalation, or laser pumping), they are far from easy-controllability and high-efficiency. More importantly, the widely-used preparation method via mechanical exfoliation abandons the merit of 2D interfacial effect, which was proved to be an important approach to efficient 2D magnetic manipulation. Therefore, studying the interfacial effect in epitaxial 2D magnets is regarded as a key field to achieving large-scale, high-Tc, easy-controlling, and stable 2D ferromagnetic order. Topological insulator (TI) is another 2D material with strong spin-orbital coupling. The topology-protected surface states provided TI with numerous fascinates spin-related effects, such as spin-momentum locking, spin exchange effect, etc., which makes this material a potential candidate to fabricate effective spintronic devices. In addition, the TI can be integrated with 2D magnets to form a 2D heterostructure, in which not only the magnetism can be enhanced via the interfacial effect, but also the spin-related properties of the heterostructure can be manipulated due to the advantages of these two materials
Ben, Jabra Zouhour. "Study of new heterostructures : silicene on graphene". Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0583.
Testo completoThe topic of this thesis deals with the study of the growth and properties of silicene (Si-ene) on graphene (Gr) on 6H-SiC(0001) with the final goal of forming free-standing (FS) Si-ene on an insulating or semiconductor substrate. I have described the substrate as a function of the CVD processing conditions. When the proportion of H2 is low it is possible to obtain homogeneous Gr on buffer layer (BL) on SiC. The STM and LEED show the superposition of the Gr mesh and the BL reconstruction representative of the epitaxial Gr. When the proportion of H2 is high, the resulting Gr layer is fully hydrogenated. This is a new result as no hydrogen intercalation process has been able to fully hydrogenate (6x6)Gr samples epitaxial on BL until now. For intermediate proportions of H2/Ar, the coexistence of (6x6)Gr and H-Gr is observed. Depending on the proportion of H2 in the gas mixture, either the SiC surface remains passivated during the entire Gr growth and H-Gr is obtained, or the H2 partially or totally desorbs and either both structures coexist or full plate (6x6)Gr is obtained. I have studied the MBE growth of Si-ene on (6x6)Gr. I have shown that it is possible to form Si-ene puddles for deposit thicknesses <0.5MC. We observe the presence of flat areas of 0.2-0.3nm thickness corresponding to a Si-ene monolayer, surrounded by 3D dendritic islands of Si. The Raman spectra show a peak up to 563cm-1 which is the closest value to Si-ene FS ever obtained. This demonstrates the formation of quasi-FS Si-ene. This work contributes to a better understanding of the CVD growth mechanism of Gr and to the advancement of research in the field of epitaxial growth of 2D materials
Libri sul tema "Matériaux de Van der Waals"
Parsegian, V. Adrian. Van der Waals forces. New York: Cambridge University Press, 2005.
Cerca il testo completoHolwill, Matthew. Nanomechanics in van der Waals Heterostructures. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9.
Testo completoL, Neal Brian, Lenhoff Abraham M e United States. National Aeronautics and Space Administration., a cura di. Van der Waals interactions involving proteins. New York: Biophysical Society, 1996.
Cerca il testo completoKipnis, Aleksandr I͡Akovlevich. Van der Waals and molecular sciences. Oxford: Clarendon Press, 1996.
Cerca il testo completo1926-, Rowlinson J. S., e I︠A︡velov B. E, a cura di. Van der Waals and molecular science. Oxford: Clarendon Press, 1996.
Cerca il testo completoHalberstadt, Nadine, e Kenneth C. Janda, a cura di. Dynamics of Polyatomic Van der Waals Complexes. New York, NY: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-8009-2.
Testo completoHalberstadt, Nadine. Dynamics of Polyatomic Van der Waals Complexes. Boston, MA: Springer US, 1991.
Cerca il testo completoNATO Advanced Research Workshop on Dynamics of Polyatomic Van der Waals Complexes (1989 Castéra-Verduzan, France). Dynamics of polyatomic Van der Waals complexes. New York: Plenum Press, 1990.
Cerca il testo completoM, Smirnov B. Cluster ions and Van der Waals molecules. Philadelphia: Gordon and Breach Science Publishers, 1992.
Cerca il testo completoKok, Auke. De verrader: Leven en dood van Anton van der Waals. 2a ed. Amsterdam: Arbeiderspers, 1995.
Cerca il testo completoCapitoli di libri sul tema "Matériaux de Van der Waals"
Tsuchiya, Taku. "Van der Waals Force". In Encyclopedia of Earth Sciences Series, 1–2. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-39193-9_329-1.
Testo completoTsuchiya, Taku. "Van der Waals Force". In Encyclopedia of Earth Sciences Series, 1473–74. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-39312-4_329.
Testo completoBruylants, Gilles. "Van Der Waals Forces". In Encyclopedia of Astrobiology, 1728–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-11274-4_1647.
Testo completoZhang, Xiang-Jun. "Van der Waals Forces". In Encyclopedia of Tribology, 3945–47. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_457.
Testo completoArndt, T. "Van-der-Waals-Kräfte". In Springer Reference Medizin, 2429–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-48986-4_3207.
Testo completoGooch, Jan W. "Van der Waals Forces". In Encyclopedic Dictionary of Polymers, 788. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_12442.
Testo completoBruylants, Gilles. "Van der Waals Forces". In Encyclopedia of Astrobiology, 2583–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-44185-5_1647.
Testo completoTadros, Tharwat. "Van der Waals Attraction". In Encyclopedia of Colloid and Interface Science, 1395–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-20665-8_159.
Testo completoArndt, T. "Van-der-Waals-Kräfte". In Lexikon der Medizinischen Laboratoriumsdiagnostik, 1. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-49054-9_3207-1.
Testo completoThompson, M. L. "Van Der Waals Complexes". In Inorganic Reactions and Methods, 196. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145227.ch142.
Testo completoAtti di convegni sul tema "Matériaux de Van der Waals"
Basov, Dmitri N. "Nano-optical probes of Van der Waals interfaces". In Active Photonic Platforms (APP) 2024, a cura di Ganapathi S. Subramania e Stavroula Foteinopoulou, 20. SPIE, 2024. http://dx.doi.org/10.1117/12.3027547.
Testo completoZhou, You. "Nonlinear photonics and excitonics in van der Waals heterostructures". In Low-Dimensional Materials and Devices 2024, a cura di Nobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov e M. Saif Islam, 30. SPIE, 2024. http://dx.doi.org/10.1117/12.3029430.
Testo completoBucher, Tomer, Yaniv Kurman, Kangpeng Wang, Qinghui Yan, Arthur Niedermayr, Ron Ruimy, Harel Nahari et al. "Dynamics of optical vortices in Van der Waals materials". In Active Photonic Platforms (APP) 2024, a cura di Ganapathi S. Subramania e Stavroula Foteinopoulou, 11. SPIE, 2024. http://dx.doi.org/10.1117/12.3028729.
Testo completoWang, Yue, Isabel Barth, Manuel Deckart, Donato Conteduca, Guilherme S. Arruda, Panaiot G. Zotev, Sam Randerson et al. "Van der Waals materials for nanophotonics and laser devices". In Active Photonic Platforms (APP) 2024, a cura di Ganapathi S. Subramania e Stavroula Foteinopoulou, 43. SPIE, 2024. http://dx.doi.org/10.1117/12.3026846.
Testo completoTrovatello, Chiara, Carino Ferrante, Birui Yang, Cory Dean, Andrea Marini, Giulio Cerullo e P. James Schuck. "Quasi phase matching from periodically poled 3R-stacked transition metal dichalcogenides". In CLEO: Science and Innovations, STh3P.6. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sth3p.6.
Testo completoTrovatello, C., C. Ferrante, B. Yang, J. Bajo, B, Braun, Z. H. Peng et al. "Quasi-phase-matched up- and down-conversion in periodically poled transition metal dichalcogenides". In Laser Science, LTh3F.3. Washington, D.C.: Optica Publishing Group, 2024. https://doi.org/10.1364/ls.2024.lth3f.3.
Testo completoCAPOZZIELLO, S., V. F. CARDONE, S. CARLONI e A. TROISI. "VAN DER WAALS QUINTESSENCE". In Proceedings of the International Conference. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702999_0038.
Testo completoNeundorf, Dörte. "Van-der-Waals-interaction constant". In The 13th international conference on spectral line shapes. AIP, 1997. http://dx.doi.org/10.1063/1.51852.
Testo completoDavoyan, Artur R. "All-van der Waals metadevices". In Active Photonic Platforms (APP) 2023, a cura di Ganapathi S. Subramania e Stavroula Foteinopoulou. SPIE, 2023. http://dx.doi.org/10.1117/12.2678158.
Testo completoLiu, Chang-Hua. "van der Waals materials integrated nanophotonics". In Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVIII, a cura di Takuo Tanaka e Din Ping Tsai. SPIE, 2020. http://dx.doi.org/10.1117/12.2567598.
Testo completoRapporti di organizzazioni sul tema "Matériaux de Van der Waals"
Klots, C. E. (Physics and chemistry of van der Waals particles). Office of Scientific and Technical Information (OSTI), ottobre 1990. http://dx.doi.org/10.2172/6608231.
Testo completoMak, Kin Fai. Understanding Topological Pseudospin Transport in Van Der Waals' Materials. Office of Scientific and Technical Information (OSTI), maggio 2021. http://dx.doi.org/10.2172/1782672.
Testo completoKim, Philip. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, marzo 2015. http://dx.doi.org/10.21236/ada616377.
Testo completoSandler, S. I. The generalized van der Waals theory of pure fluids and mixtures. Office of Scientific and Technical Information (OSTI), giugno 1990. http://dx.doi.org/10.2172/6382645.
Testo completoSandler, S. I. (The generalized van der Waals theory of pure fluids and mixtures). Office of Scientific and Technical Information (OSTI), settembre 1989. http://dx.doi.org/10.2172/5610422.
Testo completoO'Hara, D. J. Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets. Office of Scientific and Technical Information (OSTI), agosto 2019. http://dx.doi.org/10.2172/1562380.
Testo completoMenezes, W. J. C., e M. B. Knickelbein. Metal cluster-rare gas van der Waals complexes: Microscopic models of physisorption. Office of Scientific and Technical Information (OSTI), marzo 1994. http://dx.doi.org/10.2172/10132910.
Testo completoMartinez Milian, Luis. Manipulation of the magnetic properties of van der Waals materials through external stimuli. Office of Scientific and Technical Information (OSTI), maggio 2024. http://dx.doi.org/10.2172/2350595.
Testo completoGwo, Dz-Hung. Tunable far infrared laser spectroscopy of van der Waals bonds: Ar-NH sub 3. Office of Scientific and Technical Information (OSTI), novembre 1989. http://dx.doi.org/10.2172/7188608.
Testo completoFrench, Roger H., Nicole F. Steinmetz e Yingfang Ma. Long Range van der Waals - London Dispersion Interactions For Biomolecular and Inorganic Nanoscale Assembly. Office of Scientific and Technical Information (OSTI), marzo 2018. http://dx.doi.org/10.2172/1431216.
Testo completo