Articoli di riviste: "Interface measurements"

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Tomar, Vikas, e Ritesh Sachan. "Interface Strength Measurements". JOM 69, n. 1 (26 ottobre 2016): 12. http://dx.doi.org/10.1007/s11837-016-2158-9.

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Arpaia, Pasquale, Lucio Fiscarelli e Giuseppe Commara. "Advanced User Interface Generation in the Software Framework for Magnetic Measurements at Cern". Metrology and Measurement Systems 17, n. 1 (1 gennaio 2010): 27–37. http://dx.doi.org/10.2478/v10178-010-0003-y.

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Advanced User Interface Generation in the Software Framework for Magnetic Measurements at CernA model-based approach, the Model-View-Interactor Paradigm, for automatic generation of user interfaces in software frameworks for measurement systems is proposed. The Model-View-Interactor Paradigm is focused on the "interaction" typical in a software framework for measurement applications: the final user interacts with the automatic measurement system executing a suitable high-level script previously written by a test engineer. According to the main design goal of frameworks, the proposed approach allows the user interfaces to be separated easily from the application logic for enhancing the flexibility and reusability of the software. As a practical case study, this approach has been applied to the flexible software framework for magnetic measurements at the European Organization for Nuclear research (CERN). In particular, experimental results about the scenario of permeability measurements are reported.

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Alfreider, Markus, Johannes Zechner e Daniel Kiener. "Addressing Fracture Properties of Individual Constituents Within a Cu-WTi-SiOx-Si Multilayer". JOM 72, n. 12 (10 novembre 2020): 4551–58. http://dx.doi.org/10.1007/s11837-020-04444-6.

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AbstractWith modern materials applications continually decreasing in size, e.g., microelectronics, sensors, actuators, and medical implants, quantifying materials parameters becomes increasingly challenging. Specifically, addressing individual constituents of a system, such as interfaces or buried layers in a multilayer structure, emerges as a topic of great importance. We demonstrate herein a technique to assess fracture parameters of different interfaces of a Cu-WTi-SiOx-Si model system based on in situ microcantilever testing in a scanning electron microscope. Positioning the initial notch position with respect to the interface of interest enabled selection of different crack paths, while an additional overlaid sinusoidal signal permitted continuous measurement of stiffness changes and thereby experimental measurement of the actual crack extension. We thus achieved continuous J–Δa curve measurements for the interface between Cu and WTi, the bulk WTi, and the interface between WTi and SiOx. The localized nature of this novel approach makes it generally applicable to testing specific interfaces.

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Josell, D., J. E. Bonevich, I. Shao e R. C. Cammarata. "Measuring the interface stress: Silver/nickel interfaces". Journal of Materials Research 14, n. 11 (novembre 1999): 4358–65. http://dx.doi.org/10.1557/jmr.1999.0590.

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Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained using transmission x-ray diffraction. Unlike previous studies of this type, we used freestanding films so that there was no need to correct for intrinsic stresses resulting from forces applied by the substrate that can lead to large uncertainties of the calculated interface stress value. Based on the lattice parameters of the bulk, pure elements, an interface stress of −2.02 ± 0.26 N/m was calculated using the x-ray diffraction results from films with bilayer thicknesses greater than 5 nm. This value is somewhat smaller than previous measurements obtained from as-deposited films supported by substrates. For smaller bilayer thicknesses the apparent interface stress becomes smaller in magnitude, possibly due to a loss of layering in the specimens.

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Schramm, Andreas Tobias, Frauke Kathinka Helene Gellersen e Karsten Kuhlmann. "Uncertainties of S-Parameter Measurements in Rectangular Waveguides at PTB". Advances in Radio Science 22 (8 novembre 2024): 35–45. http://dx.doi.org/10.5194/ars-22-35-2024.

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Abstract. In this work the determination of measurement uncertainties in scattering parameter measurements for waveguide interfaces ranging from R 100 (WR 90) to R 2.6k (WR 3, WM-864) is presented. For each waveguide band a Thru Reflect Line calibration is performed including uncertainties for calibration standards, cable movement, interface repeatability and the characteristics of the vector network analyzer. For reflection and transmission coefficients, envelopes of uncertainties are determined for magnitude and phase angle respectively. In addition, an experiment on connection (interface) repeatability for R 140 was carried out to systematically investigate the influence of shifting and rotating of waveguide flanges. Translation values in steps of 0.3 mm up to 1.5 mm are examined in simulation as well as measurement. The findings of these investigations can be extended and applied to other waveguide bands.

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Kakiuchi, Takashi, e Mitsugi Senda. "Polarizability and nonpolarizability of oil-water interfaces with relevance to a.c. impendance measurements". Collection of Czechoslovak Chemical Communications 56, n. 1 (1991): 112–29. http://dx.doi.org/10.1135/cccc19910112.

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We have estimated the degree of polarizability of a polarized oil-water interface used as a working interface and that of the nonpolarizability of a nonpolarized interface used as a reference oil-water interface from the numerical calculation of dc and ac current vs potential behavior at both interfaces. Theoretical equations of dc and ac currents for simultaneous cation and anion transfer of supporting electrolytes have been derived for the planar stationary interface for reversible and quasi-reversible cases. In the derivation, the migration effect and the coupling of the cation and anion transfer have been incorporated. The transfer of ions constituting a supporting electrolyte contributes to the total admittance of the interface even in the region where the interface may be considered as polarized in dc sense, as pointed out first by Samec et al. (J. Electroanal. Chem. 126, 121 (1981)). Moreover, the reference oil-water interface is not ideally reversible, so that the contribution from this interface to the measured admittance cannot be negligible, unless the area of the reference oil-water interface is much larger than that of the working oil-water interface. The effect of non-ideality of the reference oil-water interface on the determination of double layer capacitances and kinetic parameters of charge transfer at the working oil-water interface has been estimated.

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Fujita, Yuki, Tadashi Ebihara, Naoto Wakatsuki, Yuka Maeda e Koichi Mizutani. "Acoustic probe for temperature measurement suitable for operation with audio interfaces having random input/output delays". Journal of the Acoustical Society of America 154, n. 4_supplement (1 ottobre 2023): A285. http://dx.doi.org/10.1121/10.0023539.

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Measuring temperature distribution is an important technique in the fields of meteorology, agriculture, and architecture. The acoustic probe emits sound waves from a speaker and measures the time it takes for the waves to reach a microphone, enabling the measurement of the average temperature between the speaker and the microphone. Additionally, by placing multiple acoustic probes around the measurement area, it becomes possible to measure the temperature distribution using fewer sensors compared to point-type sensors. However, acoustic probes can have higher costs due to the requirement for externally controllable setups or interfaces with minimal audio input/output (I/O) delays. To address this issue, we propose an acoustic probe that achieves accurate measurements even with a low-cost audio interface featuring random I/O delays. The proposed acoustic probe measures the delay time from the recording start to the playback start. This design cancels the error of sound wave propagation time caused by random delays in the audio interface. Through temperature measurement experiments using the proposed acoustic probe, it was revealed that precise measurements (the error of the proposed probe was 0.34°C, while the error of the existing probe was 4.88°C) could be achieved by canceling the random delays in the audio interface.

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Randall K. Wood e Eddie C. Burt. "Soil-Tire Interface Stress Measurements". Transactions of the ASAE 30, n. 5 (1987): 1254–58. http://dx.doi.org/10.13031/2013.30554.

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Fiorenza, Patrick, Filippo Giannazzo e Fabrizio Roccaforte. "Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review". Energies 12, n. 12 (17 giugno 2019): 2310. http://dx.doi.org/10.3390/en12122310.

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This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at the SiO2/SiC interfaces (interface states, channel mobility, trapping phenomena, etc.). First, the most common electrical characterization techniques of SiO2/SiC interfaces are presented (e.g., capacitance- and current-voltage techniques, transient capacitance, and current measurements). Then, examples of electrical characterizations at the nanoscale (by scanning probe microscopy techniques) are given, to get insights on the homogeneity of the SiO2/SiC interface and the local interfacial doping effects occurring upon annealing. The trapping effects occurring in SiO2/4H-SiC MOS systems are elucidated using advanced capacitance and current measurements as a function of time. In particular, these measurements give information on the density (~1011 cm−2) of near interface oxide traps (NIOTs) present inside the SiO2 layer and their position with respect to the interface with SiC (at about 1–2 nm). Finally, it will be shown that a comparison of the electrical data with advanced structural and chemical characterization methods makes it possible to ascribe the NIOTs to the presence of a sub-stoichiometric SiOx layer at the interface.

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Sakhawy, Nagwa R. El, e Tuncer B. Edil. "Behavior of Shaft-Sand Interface from Local Measurements". Transportation Research Record: Journal of the Transportation Research Board 1548, n. 1 (gennaio 1996): 74–80. http://dx.doi.org/10.1177/0361198196154800111.

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The load-displacement response of axially loaded structural inclusions in soil, which transfer the load to the soil along their shafts, is of growing interest in geotechnical engineering. The load-displacement response of a shaft interface is characterized by nonlinear and inelastic behavior. Surface roughness of the inclusion and stresses and deformation characteristics (stress-strain response, dilation, or contraction) of the soil element surrounding the inclusion are significant aspects of the interface mechanism. Localized shear displacement at the soil-shaft interface necessitates use of a constitutive model specifically developed for the interface. To verify theoretical models and modify and improve them, laboratory tests are performed. In recent years, there has been increasing emphasis in measurement of small-magnitude local strains to define stiffness at low strains similar to those encountered in the field in stress-path testing. To verify the theoretical model of the shaft-soil interface, a special test rig was developed that uses a cylindrical soil specimen with an inclusion in its center. The specimen represents a soil element surrounding a structural inclusion. The shaft-sand interface was investigated by small-magnitude local measurement of interface strains and thereby interface stresses and displacements during axial loading of the inclusion. The results are compared with those inferred from global measurements of interface variables. The advantages of the small-magnitude local strain measurements in determining the interface model parameters are presented. The use of the measured quantities in an elasto-plastic interface model is demonstrated by capturing the effects of confining stresses and boundary conditions of the soil specimen surrounding an axially loaded inclusion as well as the surface roughness of the inclusion.

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Landers, Alan T., David M. Koshy, Soo Hong Lee, Walter S. Drisdell, Ryan C. Davis, Christopher Hahn, Apurva Mehta e Thomas F. Jaramillo. "A refraction correction for buried interfaces applied to in situ grazing-incidence X-ray diffraction studies on Pd electrodes". Journal of Synchrotron Radiation 28, n. 3 (15 marzo 2021): 919–23. http://dx.doi.org/10.1107/s1600577521001557.

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In situ characterization of electrochemical systems can provide deep insights into the structure of electrodes under applied potential. Grazing-incidence X-ray diffraction (GIXRD) is a particularly valuable tool owing to its ability to characterize the near-surface structure of electrodes through a layer of electrolyte, which is of paramount importance in surface-mediated processes such as catalysis and adsorption. Corrections for the refraction that occurs as an X-ray passes through an interface have been derived for a vacuum–material interface. In this work, a more general form of the refraction correction was developed which can be applied to buried interfaces, including liquid–solid interfaces. The correction is largest at incidence angles near the critical angle for the interface and decreases at angles larger and smaller than the critical angle. Effective optical constants are also introduced which can be used to calculate the critical angle for total external reflection at the interface. This correction is applied to GIXRD measurements of an aqueous electrolyte–Pd interface, demonstrating that the correction allows for the comparison of GIXRD measurements at multiple incidence angles. This work improves quantitative analysis of d-spacing values from GIXRD measurements of liquid–solid systems, facilitating the connection between electrochemical behavior and structure under in situ conditions.

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Kalinin, Sergei V., e Dawn A. Bonnell. "Scanning Impedance Microscopy: From Impedance Spectra to Impedance Images". Microscopy Today 10, n. 1 (febbraio 2002): 22–27. http://dx.doi.org/10.1017/s1551929500050471.

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The properties and performance of electronic devices are crucially dependent on interface-related phenomena. The presence of interfaces can enable electronic device functionality (p-n diodes, solar cells); alternatively, non-functional interfaces can degrade device performance (ohmic vs. non-ohmic contacts). The most versatile tools for semiconductor interface characterization are ac (impedance spectroscopy, C-V) and dc (I-V) transport measurements. However, due to the lack of spatial resolution, these methods often cannot separate the contributions from electroactive interfaces and contacts. This is especially true for the non-traditional electronic materials such as semiconductive oxides, nitrides, conductive polymers, etc. Combined with the tendency towards miniaturization of electronic devices, this clearly necessitates spatially resolved ac and dc transport measurements.

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Wagener, Magnus C., R. H. Zhang, W. Zhao, M. Seacrist, M. Ries e George A. Rozgonyi. "Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces". Solid State Phenomena 131-133 (ottobre 2007): 321–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.321.

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This paper describes a series of electrical measurements and sample modifications that enabled the electrical properties of hybrid-orientation direct silicon bonded wafer interfaces to be determined. It is shown that the carrier transport across this near-surface (110)Si/(100)Si boundary is dictated by the defects present at the bond interface. These interface states are believed to pin the Fermi-level, producing a conduction barrier with a thermal activation energy Ea = 0.56eV. The defect band has been identified by deep-level transient spectroscopy and associated with the defect states typically observed in plastically deformed silicon. The carrier transport behavior across the bonding interface, as well as the observed interface trap levels are therefore attributed to the dislocation network present at the bonding interface. The spatial uniformity of the interface properties have been evaluated by TEM, electron-beam induced current microscopy, photoconductive decay and conduction measurements.

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Raciti, David, Brian Tackett, Angela Hight Walker, Gery Stafford e Thomas P. Moffat. "Insights into Electrocatalytic Surface Chemistry Via Operando Spectroscopy, Spectrometry and Stress Measurements". ECS Meeting Abstracts MA2022-02, n. 56 (9 ottobre 2022): 2166. http://dx.doi.org/10.1149/ma2022-02562166mtgabs.

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On the verge of harnessing CO2 as a building block for carbon-based fuels, electrocatalysis stands uniquely poised to revolutionize the chemical industry through renewable electrification. For this vision to become reality operando measurement techniques must be applied to study phenomena at the electrode-electrolyte interface. Understanding the dynamic interaction between ionic species in the electrolyte, active sites and intermediates is paramount for the systematic advancement in chemical reactivity, durability, and selectivity required to become commercially relevant. I will demonstrate a suite of operando techniques, such as shell-isolated nanoparticle enhanced Raman spectroscopy (Figure 1a), mass spectrometry (Figure 1a), and cantilever curvature measurements (Figure 1b), that enable direct measurement of adsorbates, phase state and stress dynamics, respectively, at the electrode interface. The combination of results from these measurements enables quantification of sub-monolayer coverages of surfaces species as well as coverage vs stress relationships providing the capability to effectively tune properties of the electrode surface. Complimentary use of these techniques to comprehensively study chemical reactions at heterogeneous interfaces provides new insights into atomic events critical for sustainable electrification to be realized. Figure Caption: (a) Identification of surface hydride on Cu(111) via complementary operando Raman and online mass spectrometry measurements and (b) cantilever curvature measurements combined with DFT calculations reveal the mechanism behind compressive stress due to CO adsorption. Figure 1

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Hohensee, Gregory T., Mousumi M. Biswas, Ella Pek, Chris Lee, Min Zheng, Yingmin Wang e Chris Dames. "Pump-probe thermoreflectance measurements of critical interfaces for thermal management of HAMR heads". MRS Advances 2, n. 58-59 (2017): 3627–36. http://dx.doi.org/10.1557/adv.2017.503.

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ABSTRACT For heat-assisted magnetic recording (HAMR) heads, a major reliability limiter is the peak near-field transducer (NFT) temperature. Since the NFT is nanoscale, heat sinking is controlled by materials and interfaces within a few 100 nm of the NFT. Heat sinks can be metallic to take advantage of the 10x-100x higher thermal boundary conductance (TBC) of metal/metal interfaces, versus nonmetal interfaces. Oxide formation at these interfaces can greatly decrease the TBC and contribute to NFT failure. Likewise, the thermal resistance of material between the NFT and media recording layer greatly influences the NFT operating temperature. Here we use pump-probe thermoreflectance techniques (FDTR, TDTR) to study metal-metal interfaces and detect partial oxidation of a buried metallic thin film, as well as evaluate the interface thermal conductance of amorphous-amorphous interfaces in a film stack representative of a HAMR head-media interface.

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Alexandris, Stelios, Daniel Ashkenazi, Jan Vermant, Dimitris Vlassopoulos e Moshe Gottlieb. "Interfacial shear rheology of glassy polymers at liquid interfaces". Journal of Rheology 67, n. 5 (21 agosto 2023): 1047–60. http://dx.doi.org/10.1122/8.0000685.

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When surface-active molecules or particles assemble at fluid–fluid interfaces, these interfaces acquire complex rheological properties that are of importance in processes that involve flow and deformation of interfaces. Although much progress has been made, interfacial rheology measurements and, in particular, the measurement of interfacial rheological properties of polymers at the air-water interface remain challenging. These are due to weak interactions with the water subphase, the polymer backbone conformation, the glass transition of the interfacial layer, and memory effects. In the present work, we describe systematic rheological measurements of polymer-laden interfaces. The measurements were performed with four different interfacial shear rheometers that can be classified into two types: rheometers in which the surface pressure can be controlled independently, and devices based on fixtures mounted on standard rotational rheometers and lacking control of the surface pressure. We use poly(tert-butyl methacrylate) and poly(methyl methacrylate), two high glass transition temperature, hydrophobic polymers anchored to the water subphase by means of the acrylate group. Using a Langmuir–Pockels (LP) trough, we identify the transition of the polymer monolayer from a viscous to a solid elastic or soft-glassy interface as the polymer surface concentration increases by compression. Then, we compare the linear viscoelastic properties of the interface as obtained by each rheometer. Our results show poor reproducibility and comparability of the rheological data as obtained by different rheometers for the same polymer. This is mainly due to differences in the method used to prepare the layers. For LP-based devices, spreading under dilute conditions and subsequent compression yields layers of compressed glassy blobs with reproducible results. On the other hand, for devices without surface pressure control, deposition of the amount needed to reach a desired concentration may lead to the formation of ill-defined layers resulting in irreproducible data. Furthermore, we find that only when spreading the polymer to form a dilute layer and then controlling the surface pressure by compression, we can clearly distinguish the fluidlike from solidlike interfaces, and a clear correlation is observed between the surface pressure (or interfacial polymer concentration) and the rheological properties of the interface.

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Dutta, B., e M. K. Surappa. "Studies on age-hardening characteristics of ceramic particle/matrix interfaces in Al–Cu–SiCp composites using ultra low-load-dynamic microhardness measurements". Journal of Materials Research 12, n. 10 (ottobre 1997): 2773–78. http://dx.doi.org/10.1557/jmr.1997.0369.

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Ultra low-load-dynamic microhardness testing facilitates the hardness measurements in a very low volume of the material and thus is suited for characterization of the interfaces in MMC's. This paper details the studies on age-hardening behavior of the interfaces in Al–Cu–5SiCp composites characterized using this technique. Results of hardness studies have been further substantiated by TEM observations. In the solution-treated condition, hardness is maximum at the particle/matrix interface and decreases with increasing distance from the interface. This could be attributed to the presence of maximum dislocation density at the interface which decreases with increasing distance from the interface. In the case of composites subjected to high temperature aging, hardening at the interface is found to be faster than the bulk matrix and the aging kinetics becomes progressively slower with increasing distance from the interface. This is attributed to the dislocation density gradient at the interface, leading to enhanced nucleation and growth of precipitates at the interface compared to the bulk matrix. TEM observations reveal that the sizes of the precipitates decrease with increasing distance from the interface and thus confirms the retardation in aging kinetics with increasing distance from the interface.

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Yulkifli, Yulkifli, Fitri Afriani, Yohandri Yohandri e Ramli Ramli. "THE DESIGN OF DISPLAY DIGITAL DATA INTERFACE CLAMP-METER COMPLEMENTED BY SENSOR GMR (GIANT MAGNETORESISTANCE)". Spektra: Jurnal Fisika dan Aplikasinya 5, n. 1 (30 aprile 2020): 53–60. http://dx.doi.org/10.21009/spektra.051.06.

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This article discusses the design of a robust data interface system that displays an electric current using the GMR sensor. Robust measurement of electrical current to detect magnetic fields contained in the current-carrying wire. The magnetic field on the cable should be the input signal to the GMR sensor to be processed by the interface program. This interface used the Arduino IDE program and displayed in the LCD screen. This research is an experimental research laboratory. The results of the data interface can be displayed in the form of comparative measurements with the power of the conventional electric current. Comparison measurements can be viewed in graphical form. The results of the study have an average measurement accuracy of 91.2%, with an average of 0.96. Besides, this study also obtained a standard deviation of 0.21 and an average error of 0:08.

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Kuzmych, L. V., D. P. Ornatskyi e V. P. Kvasnikov. "Simulation of the analogue interface for remote measurements". «System analysis and applied information science», n. 2 (28 agosto 2019): 39–47. http://dx.doi.org/10.21122/2309-4923-2019-2-39-47.

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This work is aimed at finding possibilities for increasing the accuracy of measurements and interfering analog interfaces for remote measurements using resistive strain gauges by introducing a new structural scheme, which is shown on the Fig. 1. It shows us the Schematic of the electrical functional analog interface for remote measurement using multiplexer and resistive strain gauges, which contains a measuring chain, a transmitter, the input of which is connected to a DC source through an analog demultiplexer, and the outputs of the measuring chain through the analog multiplexer are connected to the measuring amplifier, and a two-channel analog-digital converter with simultaneous sampling. The measuring chain is made in the form of three resistive current dividers, where one divider is formed by a resistive strain gauge and adjusting resistor, and two others – exemplary resistors.By introducing a new structural scheme, it will be possible to increase the accuracy of measurements and impedance of analog interfaces for remote measurements using resistive strain gauges. In this case, unlike the classical method of model measures, this method is distinguished by the «indistinguishability» of the measuring line, which makes it possible to compensate for a greater number of influential factors, in particular, the correlated noise of operational amplifiers and noise caused by the presence of the overall ground loop, the resistance of analogue switches and lines of communication.At the Fig. 2 we can see the electric model of the measuring channel in the software Elektronic Workbench.From the analysis of the simulation results it was found that the random additive component of the error would dominate. Since in the simulation of the only random component of the error there is a quantization error, the use of the differential method of measuring the output voltage will significantly improve the metrological characteristics.

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Parnham, A. "Interface pressure measurements during ambulance journeys". Journal of Wound Care 8, n. 6 (giugno 1999): 279–82. http://dx.doi.org/10.12968/jowc.1999.8.6.25891.

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Nakayama, Yasuya. "Non-Stick Length of Polymer–Polymer Interfaces under Small-Amplitude Oscillatory Shear Measurement". Polymers 16, n. 1 (26 dicembre 2023): 77. http://dx.doi.org/10.3390/polym16010077.

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Interfaces in soft materials often exhibit deviation from non-slip/stick response and play a determining role in the rheological response of the overall system. We discuss detection techniques for the excess interface rheology using small-amplitude oscillatory shear (SAOS) measurements. A stacked bilayer of different polymers is sheared parallel to the interface and the dynamic shear response is measured. Deviation of the bilayer shear modulus from the superposition of the shear moduli of the component layers is analysed. Furthermore, we introduce a frequency-dependent non-stick length based on the bilayer SAOS response to characterize the excess interface rheology. We observe an approximate stick response in the interface in bilayers composed of the chemically same monomer as well as an apparent slip in the interface between immiscible polymers. The results suggest that the proposed non-stick length in SAOS is capable of detecting the apparent interfacial slip. The non-stick length in SAOS is readily applicable to other complex interfaces of different soft materials and offers a convenient tool to characterize the excess interface rheology.

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Hatakeyama, Tetsuo, Kazuto Takao, Yoshiyuki Yonezawa e Hiroshi Yano. "Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements". Materials Science Forum 858 (maggio 2016): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.477.

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A simple and practical method of characterizing traps at SiC/SiO2 interfaces close to the bottom of the conduction band by using the split C−V and Hall measurements is proposed. This technique was applied to the characterization of traps at a wet-oxidized SiC/SiO2 interface on C-face and those at an oxynitrided SiC/SiO2 interface on Si-face. It was shown that the density of traps near the conduction band of the oxynitrided SiC/SiO2 interface was more than 10 times larger than that of the wet-oxidized SiC/SiO2 interface.

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Elfring, Gwynn J., L. Gary Leal e Todd M. Squires. "Surface viscosity and Marangoni stresses at surfactant laden interfaces". Journal of Fluid Mechanics 792 (4 marzo 2016): 712–39. http://dx.doi.org/10.1017/jfm.2016.96.

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We calculate here the force on a probe at a viscous, compressible interface, laden with soluble surfactant that equilibrates on a finite time scale. The motion of the probe through the interface drives variations in the surfactant concentration at the interface that in turn leads to a Marangoni flow that contributes to the force on the probe. We demonstrate that the Marangoni force on the probe depends non-trivially on the surface shear and dilatational viscosities of the interface indicating the difficulty in extracting these material properties from force measurements at compressible interfaces.

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Ivanov, A. V., e S. R. Kopylova. "FEATURES OF THE STUDY OF DETECTION AND MEASUREMENT OF SIDE ELECTROMAGNETIC RADIATION OF BROADBAND SIGNALS ON THE EXAMPLE OF DISPLAYPORT INTERFACE". DYNAMICS OF SYSTEMS, MECHANISMS AND MACHINES 11, n. 4 (2023): 109–14. http://dx.doi.org/10.25206/2310-9793-2023-11-4-109-114.

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The article deals with the technical channel of information leakage due to the side electromagnetic radiation of broadband signals on the example of DisplayPort interface. The peculiarities of detection and measurement of side electromagnetic radiation of broadband signals of modern digital interface - DisplayPort are briefly outlined. The architecture of DisplayPort interface is considered and its peculiarities are revealed. The laboratory stand with the help of which practical research on detection and measurement of side electromagnetic radiation of broadband signals on the example of DisplayPort interface is described in detail. According to the results of measurements the conclusion is made about the correctness of the DisplayPort interface research assumptions.

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Hatakeyama, Tetsuo, T. Shimizu, T. Suzuki, Y. Nakabayashi, Hajime Okumura e K. Kimoto. "Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC". Materials Science Forum 740-742 (gennaio 2013): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.477.

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Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.

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Hu, X. Jack, Antonio A. Padilla, Jun Xu, Timothy S. Fisher e Kenneth E. Goodson. "3-Omega Measurements of Vertically Oriented Carbon Nanotubes on Silicon". Journal of Heat Transfer 128, n. 11 (4 novembre 2005): 1109–13. http://dx.doi.org/10.1115/1.2352778.

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An exploratory thermal interface structure, made of vertically oriented carbon nanotubes directly grown on a silicon substrate, has been thermally characterized using a 3-omega method. The effective thermal conductivities of the carbon nanotubes (CNT) sample, including the effects of voids, are found to be 74W∕mK to 83W∕mK in the temperature range of 295K to 323K, one order higher than that of the best thermal greases or phase change materials. This result suggests that the vertically oriented CNTs potentially can be a promising next-generation thermal interface solution. However, fairly large thermal resistances were observed at the interfaces between the CNT samples and the experimental contact. Minimizing these contact resistances is critical for the application of these materials.

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Tang, Dajun, Brian Hefner, Kevin Williams e Eric Thorsos. "Measurements of interface roughness and examination of near bottom interface properties". Journal of the Acoustical Society of America 120, n. 5 (novembre 2006): 3144. http://dx.doi.org/10.1121/1.4787786.

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Venerus, David C. "A novel and noninvasive approach to study the shear rheology of complex fluid interfaces". Journal of Rheology 67, n. 4 (27 giugno 2023): 923–33. http://dx.doi.org/10.1122/8.0000649.

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Surfactants at gas-liquid and liquid-liquid interfaces have profound effects on interfacial stresses that strongly influence flow in bulk phases in contact with the interface. These effects include changes in interfacial tension and the development of extra stresses that arise when the interface is deformed. Surfactants are important in nature, biological function, and numerous technologies. Understanding interfacial rheology is critical to the development of improved surfactants for these important applications. Here, we propose a novel and noninvasive technique for the investigation of interfacial rheological behavior in shear deformations. In recent years, several techniques for such measurements have been developed and utilized to study a wide range of surfactant systems. However, existing techniques may inherently be invasive making it difficult to isolate the intrinsic interfacial rheological behavior from disturbances to the interface caused by the measurement itself. The proposed technique is indirect in that it does not require the introduction of a probe to deform the interface making it noninvasive. The viability of the technique is demonstrated through comprehensive fluid dynamics modeling of the flow involving a gas-liquid interface with different rheological behaviors.

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Kulhavy, David, I.-Kuai Hung, Daniel Unger e Yanli Zhang. "Student Led Area Measurement Assessments Using Virtual Globes and Pictometry Web-based Interface within an Undergraduate Spatial Science Curriculum". Journal of Education and Culture Studies 3, n. 1 (25 febbraio 2019): 53. http://dx.doi.org/10.22158/jecs.v3n1p53.

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<p><em>The use of Virtual Globes and Pictometry continues to expand and develop in undergraduate spatial science education. Spatial science undergraduates measured the area of 30 rectangles on the earth’s surface and compared them to Pictometry hyperspectral imagery measurements within a web-based interface and the Google Earth interface compared to ArcGIS Explorer, Map Developers and ArcMap using the ArcMap 10.5.2 interface. An analysis of variance of the absolute mean area errors (p-value of 0.009271) concluded the accuracy of the five area measurements were statistically different at the 95% confidence interval. A Tukey pair-wise test found that the Pictometry and Google Earth methods were more accurate than the ArcGIS Explorer, Map Developers and ArcMap methods. The lowest standard deviation of errors (72.6 sq. ft.) for Pictometry was the most accurate and precise method for on-screen area measurement, followed by Google Earth (SD = 205.0 sq. ft.). The high variation of area measurement error from ArcMap, Map Developers, and ArcGIS Explorer made them less reliable as an alternative to field measurements with ArcMap the worst (SD = 915.1 sq. ft.). The results indicate that Pictometry and Google Earth could both be used to accurately estimate area using on-screen measurements compared to in situ area measurement assessments. </em></p>

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Hidalgo-López, José A., Óscar Oballe-Peinado, Julián Castellanos-Ramos e José A. Sánchez-Durán. "Two-Capacitor Direct Interface Circuit for Resistive Sensor Measurements". Sensors 21, n. 4 (22 febbraio 2021): 1524. http://dx.doi.org/10.3390/s21041524.

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Direct interface circuits (DICs) avoid the need for signal conditioning circuits and analog-to-digital converters (ADCs) to obtain digital measurements of resistive sensors using only a few passive elements. However, such simple hardware can lead to quantization errors when measuring small resistance values as well as high measurement times and uncertainties for high resistances. Different solutions to some of these problems have been presented in the literature over recent years, although the increased uncertainty in measurements at higher resistance values is a problem that has remained unaddressed. This article presents an economical hardware solution that only requires an extra capacitor to reduce this problem. The circuit is implemented with a field-programmable gate array (FPGA) as a programmable digital device. The new proposal significantly reduces the uncertainty in the time measurements. As a result, the high resistance errors decreased by up to 90%. The circuit requires three capacitor discharge cycles, as is needed in a classic DIC. Therefore, the time to estimate resistance increases slightly, between 2.7% and 4.6%.

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Carroll, Gerard Michael, Gabriel M. Veith, Maxwell C. Schulze e Ryan Doeren. "Accelerating Measurement Times by Correlating Electrode/Electrolyte Interface Properties with Cycle and Calendar Lifetimes". ECS Meeting Abstracts MA2024-01, n. 2 (9 agosto 2024): 329. http://dx.doi.org/10.1149/ma2024-012329mtgabs.

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Abstract (sommario):

Electrochemical performance measurements on novel battery technologies are slow and require substantial resources. For example, a common metric for assessing the cycle lifetime of a cell is by charging and discharging at a rate of one cycle every six hours (C/3) for 1000 cycles and reporting the remaining capacity after the measurement. At this rate, a single measurement takes eight months to acquire useful data. Even worse, the benchmark for an acceptable shelf-life (calendar life) is to retain 80% of the initial cell capacity through 10 years. As of now, the only reliable method for acquiring this value is to hold the cell at open circuit for the duration of the time (10 years) while performing intermittent reference performance tests. The ability to quickly screen new chemistries for LIB applications offers tremendous value for accelerating discovery. Here, I will present an electrochemical impedance technique that measures a key parameter of the solid|electrolyte interface. This method uses the Helmholtz and Gouy-Chapman-Stern models of electrochemical interfaces to approximate the ‘health’ of the anode|electrolyte interface. These measurements strongly correlate to the average Coulombic efficiency of batteries with different cell chemistries which may offer predictive power for assessing the long-term cycle and calendar lifetimes.

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Su, Liang Yu. "LabVIEW Applications for Fiber-Optic Remote Test and Fiber Sensor Systems". Applied Mechanics and Materials 610 (agosto 2014): 216–20. http://dx.doi.org/10.4028/www.scientific.net/amm.610.216.

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This paper demonstrates applications of LabVIEW in automatic test measurement of fiber optic system.First,the LabVIEW applications in fiber optic system and the basics of instrument connectivity are presented.Then,the aspects of hardware communication to external instruments through GPIB and serial interfaces are analyzed.Next,self-calibrating automated characterization system for depressed cladding applications is demonstrated utilizing the LabVIEW’s GPIB interface. Results of the manual and automatic measurements and the analysis of the measurement trace obtained from the optical time domain reflectometer (OTDR) are shown.In the end,two applications of LabVIEW in fiber optic sensor system are discussed.

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Gustavsson, M., Hideaki Nagai e Takeshi Okutani. "Characterization of Anisotropic and Irregularly-Shaped Materials by High-Sensitive Thermal Conductivity Measurements". Solid State Phenomena 124-126 (giugno 2007): 1641–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1641.

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In modern thermal analysis and design involving thermal transport in solid components it is necessary to apply different modeling of the thermal heat flow in bulk material and across solid surface interfaces either in shape of a layer or a solid-solid interface. Similar differences occur when applying different measurement techniques. Some techniques have been developed specifically for the purpose of performing measurements of bulk properties by removing the influence from thermal contact resistance between the measurement probe and the sample material. Thermal conductivity measurements on metal and ceramic objects of various geometries such as thin bars, thin sheets as well as coatings or layers are here described when using the Transient Plane Source technique. A summary overview of the recent developments of this technique, including its ability to be applied in measurement situations covering a wide range of length and time scales, is also presented. Structural changes in anisotropy can be recorded with high sensitivity by comparative measurements. The technique may be applied in situations requiring non-destructive testing, e.g. samples of particular geometry used for mechanical or tensile testing.

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Martinez, Alejandro, e Hans Henning Stutz. "Evolution of excess pore water pressure in undrained claystructure interface shear tests". E3S Web of Conferences 544 (2024): 01025. http://dx.doi.org/10.1051/e3sconf/202454401025.

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Recent studies focused on the shear behaviour of clay-structure interfaces have shown the importance of the shearing rate on the strength of these interfaces. In normally-consolidated clays, increasing the shearing rate results in a decrease in the interface strength, while the trend is opposite in heavily overconsolidated clays. While analytical and empirical interpretation methods indicate that the generation of shear-induced excess pore pressures are responsible for theaforementioned trends, experiments with pore water pressure measurements at the clay-structure interface are rare. In this paper, we first describe a modified interface shear box testing setup that is equipped with a pore water pressure sensor. For this equipment, the fully rough structural surface was manufactured with a port at the centre of the clay-surface interface to measure the pore water pressure. We present the results of undrained clay-structure interface tests on normally consolidated (NC) and overconsolidated (OC) specimens of kaolin clay. The results agree with the expectations, where the NC specimens generate excess pore pressures with greater magnitudes and heavily OC specimens generate negative excess pore pressures. Measurements of the pore water pressures allow calculating vertical effective stresses, which can be used to investigate the effective stress paths followed by the clay-structure interface during the tests. This paper also provides a comparison of the measured values of beta and adhesion factors with previously published results and relationships used for the design of deep foundations.

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Portavoce, Alain, Ivan Blum, Khalid Hoummada, Dominique Mangelinck, Lee Chow e Jean Bernardini. "Original Methods for Diffusion Measurements in Polycrystalline Thin Films". Defect and Diffusion Forum 322 (marzo 2012): 129–50. http://dx.doi.org/10.4028/www.scientific.net/ddf.322.129.

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With the development of nanotechnologies, the number of industrial processes dealing with the production of nanostructures or nanoobjects is in constant progress (microelectronics, metallurgy). Thus, knowledge of atom mobility and the understanding of atom redistribution in nanoobjects and during their fabrication have become subjects of increasing importance, since they are key parameters to control nanofabrication. Especially, todays materials can be both composed of nanoobjects as clusters or decorated defects, and contain a large number of interfaces as in nanometer-thick film stacking and buried nanowires or nanoislands. Atom redistribution in this type of materials is quite complex due to the combination of different effects, such as composition and stress, and is still not very well known due to experimental issues. For example, it has been shown that atomic transport in nanocrystalline layers can be several orders of magnitude faster than in microcrystalline layers, though the reason for this mobility increase is still under debate. Effective diffusion in nanocrystalline layers is expected to be highly dependent on interface and grain boundary (GB) diffusion, as well as triple junction diffusion. However, experimental measurements of diffusion coefficients in nanograins, nanograin boundaries, triple junctions, and interfaces, as well as investigations concerning diffusion mechanisms, and defect formation and mobility in these different diffusion paths are today still needed, in order to give a complete picture of nanodiffusion and nanosize effects upon atom transport. In this paper, we present recent studies dealing with diffusion in nanocrystalline materials using original simulations combined with usual 1D composition profile measurements, or using the particular abilities of atom probe tomography (APT) to experimentally characterize interfaces. We present techniques allowing for the simultaneous measurement of grain and GB diffusion coefficients in polycrystals, as well as the measurement of nanograin lattice diffusion and triple junction diffusion. We also show that laser-assisted APT microscopy is the ideal tool to study interface diffusion and nanodiffusion in nanostructures, since it allows the determination of 1D, 2D and 3D atomic distributions that can be analyzed using diffusion analytical solutions or numerical simulation.

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Howes, P. B., K. A. Edwards, J. E. Macdonald, T. Hibma, T. Bootsman, M. A. James e C. L. Nicklin. "The Atomic Structure of the Si(111)-Pb Buried Interface Grown on the ${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Pb}$ Reconstruction". Surface Review and Letters 05, n. 01 (febbraio 1998): 163–66. http://dx.doi.org/10.1142/s0218625x98000311.

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The Si(111)-Pb interface is a prototypical metal-semiconductor interface and has been the subject of a number of experimental studies. The Schottky barrier height is known to depend on the initial reconstruction formed by the first monolayer of Pb atoms and we have previously shown that there are structural differences between the buried interfaces. We present surface X-ray diffraction measurements of the interface grown from the incommensurate [Formula: see text] reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between unreconstructed, bulk-like Si(111) and disordered, bulk-like Pb(111). This interface is contrasted with the interface formed by growth on the Si(111)-(7 × 7)-Pb reconstruction at which the starting reconstruction is preserved.

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SATHER, A. P., A. K. W. TONG e D. S. HARBISON. "THE RELATIONSHIP OF LIVE ULTRASONIC PROBES TO CARCASS FAT MEASUREMENTS IN SWINE". Canadian Journal of Animal Science 68, n. 2 (1 giugno 1988): 355–58. http://dx.doi.org/10.4141/cjas88-040.

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Abstract (sommario):

Measurements of total fat depth and depth to the interface between the second and third fat layers were made on live pigs just prior to slaughter and on their hot and cold carcasses. The data were analyzed to predict the changes that would take place in these measures of fat depth during slaughter and carcass cooling. A statistical interaction was detected between slaughter weight and the animal/carcass state at the time of measurement for the total fat measurement only. This suggests that measurements taken to the interface of the second and third fat layers will exhibit a more consistent relationship between live animal and carcass values. Key words: Swine, ultrasonic probes, slaughter weight, carcass fat

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Mchedlidze, Teimuraz, Maximilian Drescher, Elke Erben e J. Weber. "Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node". Solid State Phenomena 242 (ottobre 2015): 459–65. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.459.

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Fast progress in nanometer-node high-k metal gate (HKMG) technology requires the development of versatile and detailed characterization methods for semiconductor / dielectric / metal stacks and interfaces between them. Complexity of the advanced fabrication processes does not allow preparation of model samples with dimensions used in standard laboratory measurements. In this report we apply capacitance transient spectroscopy measurements for the characterization of HKMG field effect transistors (FET) fabricated in the standard 28 nm node technology. Measurements were performed on n-FET devices. The devices were characterized in the as-fabricated stage, after application of electrical stress and after fluorine implantation introduced to passivate the interface carrier traps. Our results show good correspondence with those obtained by other characterization methods and supply detailed information on the energy distribution of the interface trap density in the system.

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Hatakeyama, Tetsuo, Hirofumi Matsuhata, T. Suzuki, Takashi Shinohe e Hajime Okumura. "Microscopic Examination of SiO₂/4H-SiC Interfaces". Materials Science Forum 679-680 (marzo 2011): 330–33. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.330.

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SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and spatially resolved electron energy-loss spectroscopy (EELS). HRTEM and HAADF-STEM images of SiO2/4H-SiC interfaces reveal that abrupt interfaces are formed irrespective of the fabrication conditions. Transition regions around the interfaces reported by Zheleva et al. were not observed. Using EELS, profiles of the C/Si and O/Si ratios across an interface were measured. Our measurements did not reveal a C-rich region on the SiC side of the interface, which was reported by Zheleva et al.

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Lee, Kin Kiong, Gerhard Pensl, Maher Soueidan e Gabriel Ferro. "Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism". Materials Science Forum 556-557 (settembre 2007): 505–8. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.505.

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This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the 3C-SiC films were grown using the Vapour- Liquid-Solid mechanism. The temperature- and frequency-dependent electrical properties of SiO2/3C-SiC/6H-SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C-SiC film is doped near the surface with an average concentration of 8.3 × 1016 cm-3. The measured interface state density near the conduction band edge of 3C-SiC is below 1011cm-2⋅eV-1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO2/ n-type SiC consist of two different kinds of interface traps – the carbon clusters located at the interface and the intrinsic defects located within the oxide layer.

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Labed, V., O. Witschger, M. C. Robe e B. Sanchez. "222Rn Emission Flux and Soil-Atmosphere Interface: Comparative Analysis of Different Measurement Techniques". Radiation Protection Dosimetry 56, n. 1-4 (1 dicembre 1994): 271–73. http://dx.doi.org/10.1093/oxfordjournals.rpd.a082469.

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Abstract Radon emission flux at the ground-atmosphere interface is one of the measurements commonly made for environmental purposes and on prospective mining sites. There are a number of ways of making such measurements. Generally an 'accumulation' technique is used. This method consists in determining the radon activity at a given time, inside a container placed on the ground with one side open, facing downward. The radon activity is determined by sampling the air inside the confinement system with a scintillation flask. The purpose of this work was to simplify this method by using other radon activity measurement techniques. The flux measurements made by the usual method, used as reference (spot sampling), were compared with those made using a silicon detector (continuous measurement) and with a solid trace detector (integrated measurement). For the latter two methods, a correction factor is applied to obtain the real value of the 222Rn emission flux yielded by the reference method.

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Nakanuma, Takato, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura e Heiji Watanabe. "Comprehensive physical and electrical characterizations of NO nitrided SiO₂/4H-SiC(112̄0) interfaces". Japanese Journal of Applied Physics 61, SC (2 marzo 2022): SC1065. http://dx.doi.org/10.35848/1347-4065/ac4685.

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Abstract Nitridation of SiO2/4H-SiC(112̄0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance–voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the interface defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

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Armitage, Lucy, Angela Buller, Ginu Rajan, Gangadhara Prusty, Anne Simmons e Lauren Kark. "Clinical utility of pressure feedback to socket design and fabrication". Prosthetics and Orthotics International 44, n. 1 (26 novembre 2019): 18–26. http://dx.doi.org/10.1177/0309364619868364.

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Background: The clinical utility of measuring pressure at the prosthetic socket-residual limb interface is currently unknown. Objectives: This study aimed to identify whether measuring interface pressure during prosthetic design and fabrication results in closer agreement in pressure measurements between sockets made by different clinicians, and a reduction in pressure over areas of concern. It also investigated whether clinicians value knowing the interface pressure during the fabrication process. Study design: Mixed methods. Methods: Three prosthetists designed a complete prosthetic system for a transtibial residual limb surrogate. Standardised mechanical testing was performed on each prosthetic system to gain pressure measurements at four key anatomical locations. These measurements were provided to the clinicians, who subsequently modified their sockets as each saw fit. The pressure at each location was re-measured. Each prosthetist completed a survey that evaluated the usefulness of knowing interface pressures during the fabrication process. Results: Feedback and subsequent socket modifications saw a reduction in the pressure measurements at three of the four anatomical locations. Furthermore, the pressure measurements between prosthetists converged. All three prosthetists found value in the pressure measurement system and felt they would use it clinically. Conclusions: Results suggest that sensors measuring pressure at the socket-limb interface has clinical utility in the context of informing prosthetic socket design and fabrication. If the technology is used at the check socket stage, iterative designs with repeated measurements can result in increased consistency between clinicians for the same residual limb, and reductions in the magnitudes of pressures over specific anatomical landmarks. Clinical relevance This study provides new information on the value of pressure feedback to the prosthetic socket design process. It shows that with feedback, socket modifications can result in reduced limb pressures, and more consistent pressure distributions between prosthetists. It also justifies the use of pressure feedback in informing clinical decisions.

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Yang, Chunyu, Chieh-Tsung Lo, Ashraf F. Bastawros e Balaji Narasimhan. "Measurements of diffusion thickness at polymer interfaces by nanoindentation: A numerically calibrated experimental approach". Journal of Materials Research 24, n. 3 (marzo 2009): 985–92. http://dx.doi.org/10.1557/jmr.2009.0105.

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The interfacial fracture toughness and the adhesion strength of two dissimilar materials are governed by the diffusion interfacial thickness and its mechanical characteristics. A new testing methodology is implemented here to estimate the actual interfacial thickness from a series of nanoindentations across the interface, under the same applied load, with tip radius and indentation depth many times larger than the interface thickness. The bimaterial system used is a semicrystalline polymer interface of isotactic polypropylene and linear low-density polyethylene. The laminate is prepared under a range of diffusion temperature to yield diffusion interfaces of 0 to 50 nm. A numerical relationship is developed using two-dimensional (2D) finite element simulation to correlate the true interfacial thickness, measured by transmission electron microscopy, with the experimentally estimated apparent interfacial thickness, derived from the transition domain of a series of indents across the interface. A range of material-pairs property combinations are examined for Young’s modulus ratio E1/E2 = 1 to 3, yield strength ratio σY1/σY2 = 1 to 2.5, and interfacial thickness of 0 to 100 nm. The proposed methodology and the numerically calibrated relationship are in good agreement with the true interfacial thickness.

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Singh, Ajay, A. K. Gupta, J. M. Keller e P. K. Dubey. "Hardware and Software Interface for Luminescence Measurements". International Journal of Computer Trends and Technology 9, n. 7 (25 marzo 2014): 361–70. http://dx.doi.org/10.14445/22312803/ijctt-v9p166.

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Moritz, W., I. Gerhardt, D. Roden, M. Xu e S. Krause. "Photocurrent measurements for laterally resolved interface characterization". Fresenius' Journal of Analytical Chemistry 367, n. 4 (7 giugno 2000): 329–33. http://dx.doi.org/10.1007/s002160000409.

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47

Martelli, Faustino. "Photoluminescence measurements at the Si/SiO2 interface". Surface Science Letters 170, n. 1-2 (aprile 1986): A259. http://dx.doi.org/10.1016/0167-2584(86)90628-6.

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Martelli, Faustino. "Photoluminescence measurements at the Si/SiO2 interface". Surface Science 170, n. 1-2 (aprile 1986): 676–81. http://dx.doi.org/10.1016/0039-6028(86)91039-3.

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49

Finnie, Allson. "Interface pressure measurements in leg ulcer management". British Journal of Nursing 9, Sup1 (23 marzo 2000): S8—S18. http://dx.doi.org/10.12968/bjon.2000.9.sup1.6353.

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van Lent, D. Q., A. A. A. Molenaar, S. J. Picken e M. F. C. van de Ven. "Refractometric Measurements at the Bitumen–Aggregate Interface". Journal of Testing and Evaluation 42, n. 5 (1 luglio 2014): 20130250. http://dx.doi.org/10.1520/jte20130250.

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