Articoli di riviste sul tema "III-V technology"
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Lile, D. L. "Advanced III–V semiconductor materials technology assessment". Thin Solid Films 141, n. 2 (agosto 1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.
PEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY". International Journal of Modern Physics B 07, n. 28 (30 dicembre 1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.
Zhang, John H., Stan Tsai, Charan Surisetty, Jody Fronheiser, Shariq Siddiqui, Steven Bentley, Raghuveer Patlolla, Donald F. Canaperi, Walter Kleemeier e Cathy Labelle. "CMP Challenges for Advanced Technology Nodes beyond Si". MRS Advances 2, n. 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.
Huber, A. M., e C. Grattepain. "Crystal Defect Study in III-V Compound Technology". Materials Science Forum 38-41 (gennaio 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.
Beneking, Heinz. "III–V Technology: The Key for Advanced Devices". Journal of The Electrochemical Society 136, n. 9 (1 settembre 1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.
Hasegawa, Hideki, e Masamichi Akazawa. "Surface passivation technology for III–V semiconductor nanoelectronics". Applied Surface Science 255, n. 3 (novembre 2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.
Liliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain e E. R. Weber. "Structure of III-V oxides". Proceedings, annual meeting, Electron Microscopy Society of America 54 (11 agosto 1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.
Thakur, R. P. S., R. Singh, A. J. Nelson e A. B. Swartzlander. "Role ofinsiturapid isothermal processing in advanced III‐V technology". Journal of Applied Physics 70, n. 7 (ottobre 1991): 3857–61. http://dx.doi.org/10.1063/1.349191.
Pearton, S. J., F. Ren, S. N. G. Chu, W. S. Hobson, C. R. Abernathy, T. R. Fullowan, J. R. Lothian, R. G. Elliman, D. C. Jacobson e J. M. Poate. "Applications of ion implantation in III–V device technology". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, n. 1-4 (giugno 1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.
Dutta, P. S. "III–V Ternary bulk substrate growth technology: a review". Journal of Crystal Growth 275, n. 1-2 (febbraio 2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.
Miyauchi, Eizo, e Hisao Hashimoto. "Maskless ion implantation technology for III–V compound semiconductors". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (marzo 1985): 851–57. http://dx.doi.org/10.1016/0168-583x(85)90482-3.
Hirano, Koki. "AWPP 2011 Report Injection Molding & Mold Technology III~V". Seikei-Kakou 24, n. 3 (20 febbraio 2012): 148. http://dx.doi.org/10.4325/seikeikakou.24.148.
Shahrjerdi, D., S. W. Bedell, B. Hekmatshoar, C. Bayram e D. Sadana. "(Invited) New Paradigms for Cost-Effective III-V Photovoltaic Technology". ECS Transactions 50, n. 40 (1 aprile 2013): 15–22. http://dx.doi.org/10.1149/05040.0015ecst.
Vitanov, P., M. Milanova, E. Goranova, Ch Dikov, Pl Ivanov e V. Bakardjieva. "Solar cell technology on the base of III–V heterostructures". Journal of Physics: Conference Series 253 (1 novembre 2010): 012044. http://dx.doi.org/10.1088/1742-6596/253/1/012044.
Hashimoto, H., e E. Miyauchi. "Finely focused ion beam technology in III-V compound semiconductors". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (gennaio 1987): 381–87. http://dx.doi.org/10.1016/s0168-583x(87)80075-7.
Alles, David S., e Kevin J. Brady. "Packaging Technology for III-V Photonic Devices and Integrated Circuits". AT&T Technical Journal 68, n. 1 (2 gennaio 1989): 83–92. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00648.x.
Thadathil, George. "Editorial: Technology and Evolving Social Spaces". SALESIAN JOURNAL OF HUMANITIES & SOCIAL SCIENCES 4, n. 1 (1 maggio 2013): v—iii. http://dx.doi.org/10.51818/sjhss.04.2013.v-iii.
Pacella, Nan Y., Kunal Mukherjee, Mayank T. Bulsara e Eugene A. Fitzgerald. "Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials". ECS Journal of Solid State Science and Technology 2, n. 7 (2013): P324—P331. http://dx.doi.org/10.1149/2.015307jss.
NISHIYAMA, Nobuhiko. "Low-Temperature Direct Bonding Technology for III-V/Si Heterogeneous Integration". Review of Laser Engineering 48, n. 10 (2020): 520. http://dx.doi.org/10.2184/lsj.48.10_520.
Cross, T. A., e C. R. Huggins. "Advanced single crystal III-V solar cell technology and its applications". Renewable Energy 6, n. 3 (aprile 1995): 283–90. http://dx.doi.org/10.1016/0960-1481(95)00021-b.
Long, A. P., e I. G. Eddison. "Advanced III–V HEMT technology for microwave and millimetre-wave applications". Microelectronic Engineering 19, n. 1-4 (settembre 1992): 389–95. http://dx.doi.org/10.1016/0167-9317(92)90460-9.
Quay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John e Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology". ECS Meeting Abstracts MA2023-01, n. 33 (28 agosto 2023): 1853. http://dx.doi.org/10.1149/ma2023-01331853mtgabs.
Quay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John e Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology". ECS Transactions 111, n. 1 (19 maggio 2023): 117–22. http://dx.doi.org/10.1149/11101.0117ecst.
PEARTON, S. J. "REACTIVE ION ETCHING OF III–V SEMICONDUCTORS". International Journal of Modern Physics B 08, n. 14 (30 giugno 1994): 1781–876. http://dx.doi.org/10.1142/s0217979294000762.
McMORROW, DALE, JOSEPH S. MELINGER e ALVIN R. KNUDSON. "SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS". International Journal of High Speed Electronics and Systems 14, n. 02 (giugno 2004): 311–25. http://dx.doi.org/10.1142/s0129156404002375.
Ji, Chunnuan, Rongjun Qu, Qinghua Tang, Xiguang Liu, Hou Chen, Changmei Sun e Peng Yin. "Removal of trace As(V) from aqueous solution by Fe(III)-loaded porous amidoximated polyacrylonitrile". Water Supply 16, n. 6 (18 maggio 2016): 1603–13. http://dx.doi.org/10.2166/ws.2016.085.
Xi, Jianhong, e Mengchang He. "Removal of Sb(III) and Sb(V) from aqueous media by goethite". Water Quality Research Journal 48, n. 3 (1 agosto 2013): 223–31. http://dx.doi.org/10.2166/wqrjc.2013.030.
Nayak, Bishwajit, Md Amir Hossain, Mrinal Kumar Sengupta, Saad Ahamed, Bhaskar Das, Arup Pal e Amitava Mukherjee. "Adsorption Studies with Arsenic onto Ferric Hydroxide Gel in a Non-oxidizing Environment: the Effect of Co-occurring Solutes and Speciation". Water Quality Research Journal 41, n. 3 (1 agosto 2006): 333–40. http://dx.doi.org/10.2166/wqrj.2006.037.
WEAVER, B. D., DALE McMORROW e L. M. COHN. "RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS". International Journal of High Speed Electronics and Systems 13, n. 01 (marzo 2003): 293–326. http://dx.doi.org/10.1142/s0129156403001624.
Barnett, Joel, Richard Hill e Prashant Majhi. "Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique". Solid State Phenomena 187 (aprile 2012): 33–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.33.
Singh, Jay, C. L. Maurya, Rishabh Gupta, Sunil Kumar, Shivam Chaturvedi, Ajay Pratap Singh e Dhruvendra Singh Sachan. "Genetic Divergence Analysis of Wheat (Triticum aestivum L.) Genotypes". Journal of Experimental Agriculture International 46, n. 5 (21 marzo 2024): 287–92. http://dx.doi.org/10.9734/jeai/2024/v46i52377.
Yan, Zhao, e Qiang Li. "Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon". Journal of Physics D: Applied Physics 57, n. 21 (29 febbraio 2024): 213001. http://dx.doi.org/10.1088/1361-6463/ad26cd.
Ji, Chunnuan, Suwen Sun, Shenghua Chi, Rongjun Qu, Changmei Sun e Peng Yin. "Arsenic adsorption using Fe(III)-loaded porous amidoximated acrylonitrile/itaconic copolymers". Water Supply 17, n. 3 (11 ottobre 2016): 698–706. http://dx.doi.org/10.2166/ws.2016.148.
Gao, Luyao, Mengna Hao, Fanling Bu, Chunnuan Ji, Rongjun Qu, Changmei Sun e Ying Zhang. "As(III) removal by Fe(III)-amidoximated PAN in the presence of H2O2 through simultaneous oxidation and adsorption". Water Supply 20, n. 2 (30 dicembre 2019): 565–73. http://dx.doi.org/10.2166/ws.2019.201.
Liu, G. J., X. R. Zhang, J. Jain, J. W. Talley e C. R. Neal. "Stability of inorganic arsenic species in simulated raw waters with the presence of NOM". Water Supply 6, n. 6 (1 dicembre 2006): 175–82. http://dx.doi.org/10.2166/ws.2006.954.
Ghosh, Uday Chand, Durjoy Bandyopadhyay, Biswaranjan Manna e Manik Mandal. "Hydrous Iron(III)-Tin(IV) Binary Mixed Oxide: Arsenic Adsorption Behaviour from Aqueous Solution". Water Quality Research Journal 41, n. 2 (1 maggio 2006): 198–209. http://dx.doi.org/10.2166/wqrj.2006.023.
Hiraki, Tatsurou, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda e Shinji Matsuo. "III–V/Si integration technology for laser diodes and Mach–Zehnder modulators". Japanese Journal of Applied Physics 58, SB (27 marzo 2019): SB0803. http://dx.doi.org/10.7567/1347-4065/ab0741.
Lee, R. T. P., W. Y. Loh, R. Tieckelmann, T. Orzali, C. Huffman, A. Vert, G. Huang et al. "(Invited) Technology Options to Reduce Contact Resistance in Nanoscale III-V MOSFETs". ECS Transactions 66, n. 4 (15 maggio 2015): 125–34. http://dx.doi.org/10.1149/06604.0125ecst.
Deshpande, V. V., V. Djara, D. Caimi, E. O'Connor, M. Sousa, L. Czornomaz e J. Fompeyrine. "(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology". ECS Transactions 69, n. 10 (2 ottobre 2015): 131–42. http://dx.doi.org/10.1149/06910.0131ecst.
Cheng, K. Y. "Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications". Proceedings of the IEEE 85, n. 11 (1997): 1694–714. http://dx.doi.org/10.1109/5.649646.
Kwo, J. R., T. D. Lin, M. L. Huang, P. Chang, Y. J. Lee e M. Hong. "Advances on III-V MOSFET for Science and Technology beyond Si CMOS". ECS Transactions 19, n. 2 (18 dicembre 2019): 593–603. http://dx.doi.org/10.1149/1.3122118.
Harris, H. Michael. "III–V MESFET and HEMT research at the Georgia technology research institute". III-Vs Review 4, n. 2 (aprile 1991): 28–30. http://dx.doi.org/10.1016/0961-1290(91)90190-8.
Kúdela, R., J. Šoltýs, M. Kučera, R. Stoklas, F. Gucmann, M. Blaho, M. Mičušík et al. "Technology and application of in-situ AlOx layers on III-V semiconductors". Applied Surface Science 461 (dicembre 2018): 33–38. http://dx.doi.org/10.1016/j.apsusc.2018.06.229.
Lee, Subin, Seong Kwang Kim, Jae-Hoon Han, Jin Dong Song, Dong-Hwan Jun e Sang-Hyeon Kim. "Epitaxial Lift-Off Technology for Large Size III–V-on-Insulator Substrate". IEEE Electron Device Letters 40, n. 11 (novembre 2019): 1732–35. http://dx.doi.org/10.1109/led.2019.2944155.
L�th, H. "Research on III-V Semiconductor Interfaces: Its Impact on Technology and Devices". physica status solidi (a) 187, n. 1 (settembre 2001): 33–44. http://dx.doi.org/10.1002/1521-396x(200109)187:1<33::aid-pssa33>3.0.co;2-9.
Sri sukmawati, Ni made, I. made Citra wibawa e Putu Aditya antara. "Pengaruh Model Pembelajaran Science Environment Technology Society Terhadap Hasil Belajar Ilmu Pengetahuan Alam". Jurnal Ilmiah Sekolah Dasar 2, n. 3 (28 novembre 2018): 329. http://dx.doi.org/10.23887/jisd.v2i3.16149.
Singh, Tony Sarvinder, e Kamal K. Pant. "Kinetics and Mass Transfer Studies on the Adsorption of Arsenic onto Activated Alumina and Iron Oxide Impregnated Activated Alumina". Water Quality Research Journal 41, n. 2 (1 maggio 2006): 147–56. http://dx.doi.org/10.2166/wqrj.2006.017.
Chang, Y. Y., K. S. Kim, J. H. Jung, J. K. Yang e S. M. Lee. "Application of iron-coated sand and manganese-coated sand on the treatment of both As(III) and As(V)". Water Science and Technology 55, n. 1-2 (1 gennaio 2007): 69–75. http://dx.doi.org/10.2166/wst.2007.029.
Yamaguchi, Masafumi, Frank Dimroth, Nicholas J. Ekins-Daukes, Nobuaki Kojima e Yoshio Ohshita. "Overview and loss analysis of III–V single-junction and multi-junction solar cells". EPJ Photovoltaics 13 (2022): 22. http://dx.doi.org/10.1051/epjpv/2022020.
Horng, Ray-Hua, Ming-Chun Tseng e Shui-Yang Lien. "Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate". International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/108696.