Articoli di riviste sul tema "High temperature semiconductors"
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TREW, R. J., e M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n. 01 (marzo 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Testo completoPalmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, n. 10 (ottobre 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Testo completoMa, Xi Ying. "Study of the Electrical Properties of Monolayer MoS2 Semiconductor". Advanced Materials Research 651 (gennaio 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.
Testo completoWESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, n. 04 (dicembre 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Testo completoDezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe e Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (gennaio 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Testo completoGuyenot, M., M. Reinold, Y. Maniar e M. Rittner. "Advanced wire bonding for high reliability and high temperature applications". International Symposium on Microelectronics 2016, n. 1 (1 ottobre 2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.
Testo completoZhao, Youyang, Charles Rinzler e Antoine Allanore. "Molten Semiconductors for High Temperature Thermoelectricity". ECS Journal of Solid State Science and Technology 6, n. 3 (5 dicembre 2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.
Testo completoChen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors". Highlights in Science, Engineering and Technology 81 (26 gennaio 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Testo completoKappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner e Rainer Kokozinski. "High Temperature GaN Gate Driver in SOI CMOS Technology". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 gennaio 2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.
Testo completoTournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel e Dominique Planson. "Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications". Advanced Materials Research 324 (agosto 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.
Testo completoGumyusenge, Aristide, e Jianguo Mei. "High Temperature Organic Electronics". MRS Advances 5, n. 10 (2020): 505–13. http://dx.doi.org/10.1557/adv.2020.31.
Testo completoPrikhod’ko, A. V. "High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors". Semiconductors 35, n. 6 (giugno 2001): 677. http://dx.doi.org/10.1134/1.1379402.
Testo completoNagaev, E. L. "High-temperature resistivity of degenerate ferromagnetic semiconductors". Physics Letters A 255, n. 4-6 (maggio 1999): 336–42. http://dx.doi.org/10.1016/s0375-9601(99)00188-7.
Testo completoRuddy, Frank H., Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais e Christelle Reynard-Carette. "Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments". EPJ Web of Conferences 253 (2021): 11003. http://dx.doi.org/10.1051/epjconf/202125311003.
Testo completoWang, Haidi, Qingqing Feng, Xingxing Li e Jinlong Yang. "High-Throughput Computational Screening for Bipolar Magnetic Semiconductors". Research 2022 (15 marzo 2022): 1–8. http://dx.doi.org/10.34133/2022/9857631.
Testo completoZaizen, Shohei, Kyohei Asami, Takashi Furukawa, Takeshi Hatta, Tsubasa Nakamura, Takashi Sakugawa e Takahisa Ueno. "The Development of a Compact Pulsed Power Supply with Semiconductor Series Connection". Electronics 12, n. 21 (4 novembre 2023): 4541. http://dx.doi.org/10.3390/electronics12214541.
Testo completoHan, Da-Gyeong, Dong-Hwan Lee e Jeong-Won Yoon. "Optimization of TLPS Bonding Process and Joint Property using Ni-Sn Paste for High Temperature Power Module Applications". Journal of Welding and Joining 42, n. 2 (30 aprile 2024): 165–73. http://dx.doi.org/10.5781/jwj.2024.42.2.3.
Testo completoHuang, Chengxi, Junsheng Feng, Jian Zhou, Hongjun Xiang, Kaiming Deng e Erjun Kan. "Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors". Journal of the American Chemical Society 141, n. 31 (16 luglio 2019): 12413–18. http://dx.doi.org/10.1021/jacs.9b06452.
Testo completoBonanni, Alberta, e Tomasz Dietl. "A story of high-temperature ferromagnetism in semiconductors". Chem. Soc. Rev. 39, n. 2 (2010): 528–39. http://dx.doi.org/10.1039/b905352m.
Testo completoChaves, Andrey, e David Neilson. "Two-dimensional semiconductors host high-temperature exotic state". Nature 574, n. 7776 (2 ottobre 2019): 39–40. http://dx.doi.org/10.1038/d41586-019-02906-9.
Testo completoGraham, Mike J. "Modern Analytical Techniques in High Temperature Oxidation and Corrosion". Materials Science Forum 522-523 (agosto 2006): 61–68. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.61.
Testo completoLu, Zhizhong, Menglin Jiang, Jieshi Huang, Xinlei Zhou, Kejie Li, Yue Zheng, Wenkai Jiang, Tao Zhang, Hangbing Yan e Huan Xia. "Study on NO2 gas sensitivity of metal phthalocyanine enhanced by graphene quantum dots". Journal of Physics: Conference Series 2369, n. 1 (1 novembre 2022): 012083. http://dx.doi.org/10.1088/1742-6596/2369/1/012083.
Testo completoGumyusenge, Aristide, Dung T. Tran, Xuyi Luo, Gregory M. Pitch, Yan Zhao, Kaelon A. Jenkins, Tim J. Dunn, Alexander L. Ayzner, Brett M. Savoie e Jianguo Mei. "Semiconducting polymer blends that exhibit stable charge transport at high temperatures". Science 362, n. 6419 (6 dicembre 2018): 1131–34. http://dx.doi.org/10.1126/science.aau0759.
Testo completoKim, Jong-Woo, Seong-Geon Park, Min Kyu Yang e Byeong-Kwon Ju. "Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors". Electronics 11, n. 19 (28 settembre 2022): 3094. http://dx.doi.org/10.3390/electronics11193094.
Testo completoGulyamov, G., U. I. Erkaboev e N. Yu. Sharibaev. "The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors". Modern Physics Letters B 30, n. 07 (20 marzo 2016): 1650077. http://dx.doi.org/10.1142/s0217984916500779.
Testo completoLostetter, Alexander B., J. Hornberger, B. McPherson, J. Bourne, R. Shaw, E. Cilio, W. Cilio et al. "High Temperature Silicon Carbide Power Modules for High Performance Systems". Materials Science Forum 717-720 (maggio 2012): 1219–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1219.
Testo completoHarada, T., S. Ito e A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation". Science Advances 5, n. 10 (ottobre 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.
Testo completoPavlidis, Georges, Muhammad Jamil e Bivek Bista. "(Invited) Sub-Bandgap Thermoreflectance Imaging of Ultra-Wide Bandgap Semiconductors". ECS Meeting Abstracts MA2023-01, n. 32 (28 agosto 2023): 1822. http://dx.doi.org/10.1149/ma2023-01321822mtgabs.
Testo completoWang, Baron, Andrea S. Chen e Randy H. Y. Lo. "Characteristics of Organic-Based Thermal Interface Materials Suitable for High Temperature Operation". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, HiTen (1 luglio 2019): 000041–44. http://dx.doi.org/10.4071/2380-4491.2019.hiten.000041.
Testo completoArkin, Michael, Jeff Watson, Michael Siu e Michael Cusack. "Precision Analog Signal Conditioning Semiconductors for Operation in Very High Temperature Environments". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 gennaio 2013): 000139–51. http://dx.doi.org/10.4071/hiten-ta17.
Testo completoFurnival, Benjamin J. D., Sandip K. Roy, Nicolas G. Wright e Alton B. Horsfall. "Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics". Materials Science Forum 740-742 (gennaio 2013): 837–40. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.837.
Testo completoQi, Siyuan, Chris Powley, Maria Mirgkizoudi, Adele Pliscott e Peter Collier. "Evaluation of High Temperature Joining Technologies for Semiconductor Die Attach". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (1 luglio 2017): 000177–92. http://dx.doi.org/10.4071/2380-4491.2017.hiten.177.
Testo completoHuang, Luying, Fenghua Liu, Jiachen Bao, Xiaoman Li e Weiping Wu. "High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing". Materials 17, n. 6 (19 marzo 2024): 1395. http://dx.doi.org/10.3390/ma17061395.
Testo completoChen, Yu, S. W. Fan e P. Xu. "Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives". Applied Physics Letters 121, n. 25 (19 dicembre 2022): 252102. http://dx.doi.org/10.1063/5.0125543.
Testo completoNeudeck, P. G., R. S. Okojie e Liang-Yu Chen. "High-temperature electronics - a role for wide bandgap semiconductors?" Proceedings of the IEEE 90, n. 6 (giugno 2002): 1065–76. http://dx.doi.org/10.1109/jproc.2002.1021571.
Testo completoKuroda, Shinji, Nozomi Nishizawa, Kôki Takita, Masanori Mitome, Yoshio Bando, Krzysztof Osuch e Tomasz Dietl. "Origin and control of high-temperature ferromagnetism in semiconductors". Nature Materials 6, n. 6 (21 maggio 2007): 440–46. http://dx.doi.org/10.1038/nmat1910.
Testo completoArciszewska, M., A. Mycielski, C. Testelin, C. Rigaux e A. Mauger. "High-temperature magnetic susceptibility ofCd1−xFexTe diluted magnetic semiconductors". Physical Review B 45, n. 15 (15 aprile 1992): 8746–48. http://dx.doi.org/10.1103/physrevb.45.8746.
Testo completoZhang, Wenxu, Zhishuo Huang, Wanli Zhang e Yanrong Li. "Two-dimensional semiconductors with possible high room temperature mobility". Nano Research 7, n. 12 (3 settembre 2014): 1731–37. http://dx.doi.org/10.1007/s12274-014-0532-x.
Testo completoWang, Yaqi, Huasheng Sun, Shihai Wu, Ang Li, Yi Wan, Erjun Kan e Chengxi Huang. "Prediction of high-temperature ferromagnetic semiconductors in tetrahedral superlattices". Science China Materials 67, n. 4 (20 marzo 2024): 1225–30. http://dx.doi.org/10.1007/s40843-023-2863-2.
Testo completoZhan, Tianzhuo, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu et al. "Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review". Micromachines 14, n. 11 (8 novembre 2023): 2076. http://dx.doi.org/10.3390/mi14112076.
Testo completoShur, Michael. "(Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications". ECS Meeting Abstracts MA2022-02, n. 37 (9 ottobre 2022): 1348. http://dx.doi.org/10.1149/ma2022-02371348mtgabs.
Testo completoKizilyalli, Isik C., Olga Blum Spahn e Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Meeting Abstracts MA2022-02, n. 37 (9 ottobre 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Testo completoWang, M., R. A. Marshall, K. W. Edmonds, A. W. Rushforth, R. P. Campion e B. L. Gallagher. "Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga,Mn)As". Applied Physics Letters 104, n. 13 (31 marzo 2014): 132406. http://dx.doi.org/10.1063/1.4870521.
Testo completoMonobe, Hirosato, Masaomi Kimoto e Yo Shimizu. "Influence of Temperature Variation on Field Effect Transistor Properties Using a Solution-Processed Liquid Crystalline Semiconductor, 8TNAT8". Journal of Nanoscience and Nanotechnology 16, n. 4 (1 aprile 2016): 3277–81. http://dx.doi.org/10.1166/jnn.2016.12299.
Testo completoHöhne, Jens, Matthias Bühler, Theo Hertrich e Uwe Hess. "Cryodetectors for High Resolution X-Ray Spectroscopy". Microscopy and Microanalysis 6, S2 (agosto 2000): 740–41. http://dx.doi.org/10.1017/s1431927600036199.
Testo completoKucukgok, B., Q. He, A. Carlson, A. G. Melton, I. T. Ferguson e N. Lu. "Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications". MRS Proceedings 1490 (2013): 161–66. http://dx.doi.org/10.1557/opl.2013.26.
Testo completoOstapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov e Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures". Inventions 7, n. 4 (18 ottobre 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
Testo completoRaju, Krishna Murti. "High temperature elastic anharmonicity in lanthanum mono-chalcogenides". Canadian Journal of Physics 89, n. 7 (luglio 2011): 817–24. http://dx.doi.org/10.1139/p11-062.
Testo completoEndo, Hirohisa, Kozaburo Tamura e Makoto Yao. "Liquid metals and semiconductors under pressure". Canadian Journal of Physics 65, n. 3 (1 marzo 1987): 266–85. http://dx.doi.org/10.1139/p87-036.
Testo completoFan, Yan. "Recent progress in diluted ferromagnetism for spintronic application". Journal of Physics: Conference Series 2608, n. 1 (1 ottobre 2023): 012046. http://dx.doi.org/10.1088/1742-6596/2608/1/012046.
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