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Letteratura scientifica selezionata sul tema "High dI/dt"

Autore: Grafiati

Pubblicato: 7 dicembre 2024

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Articoli di riviste sul tema "High dI/dt"

1

Przybysz, J. X., D. L. Miller, S. G. Leslie, and Y. C. Kao. "High dI/dT light-triggered thyristors." IEEE Transactions on Electron Devices 34, no. 10 (1987): 2192–99. http://dx.doi.org/10.1109/t-ed.1987.23216.

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2

Hudgins, Jerry L., and William M. Portnoy. "High di/dt Pulse Switching of Thyristors." IEEE Transactions on Power Electronics PE-2, no. 2 (1987): 143–48. http://dx.doi.org/10.1109/tpel.1987.4766348.

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3

Gerster, Christian, and Patrick Hofer. "Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters." EPE Journal 5, no. 3-4 (1996): 11–16. http://dx.doi.org/10.1080/09398368.1996.11463368.

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4

Li, Zhiqiang, Lin Zhang, Lianghui Li, et al. "A SiC gate turn-off thyristor with high di/dt for fast switching-on applications." Semiconductor Science and Technology 36, no. 12 (2021): 12LT02. http://dx.doi.org/10.1088/1361-6641/ac31e1.

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Abstract (sommario):

Abstract High di/dt 4H-silicon carbide (SiC) gate turn-off thyristors (GTOs) are investigated and developed for fast switching-on application. This work has focused on accelerating the turn-on process to improve the di/dt characteristic, and the n-base dopant concentration is carefully designed to increase the injection efficiency of top P+N junction. With reducing n-base dopant concentration from 2.3 × 1017cm−3 to 6.8 × 1016cm−3, the injection efficiency is increased about 18%, and consequently the current rise-up process and subsequent lateral propagation of the anode current are obviously a

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5

TANRIVERDİ, OSMAN, and DENİZ YILDIRIM. "Independent closed loop control of di/dt and dv/dt for high power IGBTs." Turkish Journal of Electrical Engineering and Computer Sciences 30, no. 3 (2022): 487–501. http://dx.doi.org/10.55730/1300-0632.3793.

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6

Tang, Sheng-Yi. "Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers." Electronics 9, no. 10 (2020): 1573. http://dx.doi.org/10.3390/electronics9101573.

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An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and ga

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7

Liu, Bo, Ren Ren, Zheyu Zhang, Ben Guo, Fei (Fred) Wang, and Daniel Costinett. "Impacts of High Frequency, High di/dt, dv/dt Environment on Sensing Quality of GaN Based Converters and Their Mitigation." CPSS Transactions on Power Electronics and Applications 3, no. 4 (2018): 301–12. http://dx.doi.org/10.24295/cpsstpea.2018.00030.

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8

Huang, Jun, Haimeng Huang, Xinjiang Lyu, and Xing Bi Chen. "Simulation Study of a Low Switching Loss FD-IGBT With High $dI/dt$ and $dV/dt$ Controllability." IEEE Transactions on Electron Devices 65, no. 12 (2018): 5545–48. http://dx.doi.org/10.1109/ted.2018.2873598.

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9

Haiyang Wang, Xiaoping He, Weiqing Chen, Binjie Xue, and Aici Qiu. "A High-Current High-$di/dt$ Pulse Generator Based on Reverse Switching Dynistors." IEEE Transactions on Plasma Science 37, no. 2 (2009): 356–58. http://dx.doi.org/10.1109/tps.2009.2012553.

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10

Robson, A. E. "Evolution of a z-pinch with constant dI/dt." Nuclear Fusion 28, no. 12 (1988): 2171–78. http://dx.doi.org/10.1088/0029-5515/28/12/006.

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