Articoli di riviste sul tema "GaAs Schottky diodes"
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Liu, Hai Rui, e Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection". Advanced Materials Research 683 (aprile 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.
Ozdemir, Ahmet Faruk, Adnan Calik, Guven Cankaya, Osman Sahin e Nazim Ucar. "Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes". Zeitschrift für Naturforschung A 63, n. 3-4 (1 aprile 2008): 199–202. http://dx.doi.org/10.1515/zna-2008-3-414.
Weikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger e M. Zebarjadi. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (1 gennaio 2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.
Klyuev, Alexey V., Arkady V. Yakimov e Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes". Fluctuation and Noise Letters 14, n. 03 (29 giugno 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.
Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard e Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers". Electronics 9, n. 10 (19 ottobre 2020): 1718. http://dx.doi.org/10.3390/electronics9101718.
Liu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao e Yong Fan. "Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array". Applied Sciences 10, n. 21 (9 novembre 2020): 7924. http://dx.doi.org/10.3390/app10217924.
KAHVECI, OSMAN, ABDULLAH AKKAYA, ENISE AYYILDIZ e ABDÜLMECIT TÜRÜT. "COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION". Surface Review and Letters 24, n. 04 (10 agosto 2016): 1750047. http://dx.doi.org/10.1142/s0218625x17500470.
YILDIRIM, N., H. DOGAN, H. KORKUT e A. TURUT. "DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE". International Journal of Modern Physics B 23, n. 27 (30 ottobre 2009): 5237–49. http://dx.doi.org/10.1142/s0217979209053564.
Gromov, Dmitry, e Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation". ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.
CROWE, THOMAS W., ROBERT J. MATTAUCH, ROBERT M. WEIKLE e UDAYAN V. BHAPKAR. "TERAHERTZ GaAs DEVICES AND CIRCUITS FOR HETERODYNE RECEIVER APPLICATIONS". International Journal of High Speed Electronics and Systems 06, n. 01 (marzo 1995): 125–61. http://dx.doi.org/10.1142/s0129156495000043.
Vittone, E., P. Olivero, F. Nava, C. Manfredotti, A. Lo Giudice, F. Fizzotti e G. Egeni. "Lateral IBIC analysis of GaAs Schottky diodes". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 231, n. 1-4 (aprile 2005): 513–17. http://dx.doi.org/10.1016/j.nimb.2005.01.109.
Shi, Z. Q., e W. A. Anderson. "Cryogenic processing of metal/GaAs schottky diodes". Solid-State Electronics 35, n. 10 (ottobre 1992): 1427–32. http://dx.doi.org/10.1016/0038-1101(92)90078-q.
Konishi, Y., S. T. Allen, M. Reddy, M. J. W. Rodwell, R. P. Smith e J. Liu. "AlAs/GaAs Schottky-collector resonant-tunnel-diodes". Solid-State Electronics 36, n. 12 (dicembre 1993): 1673–76. http://dx.doi.org/10.1016/0038-1101(93)90212-9.
Pham, Q. P., W. M. Kelly, P. Maaskant e J. O'Brien. "High reliability sputtered Schottky diodes on GaAs". International Journal of Infrared and Millimeter Waves 12, n. 1 (gennaio 1991): 23–31. http://dx.doi.org/10.1007/bf01041880.
Park, Il-Yong, e Yearn-Ik Choi. "Analytic Breakdown Modeling for GaAs Schottky Diodes". Physica Scripta T79, n. 1 (1999): 314. http://dx.doi.org/10.1238/physica.topical.079a00314.
Crowe, T. W., R. J. Mattauch, H. P. Roser, W. L. Bishop, W. C. B. Peatman e X. Liu. "GaAs Schottky diodes for THz mixing applications". Proceedings of the IEEE 80, n. 11 (1992): 1827–41. http://dx.doi.org/10.1109/5.175258.
Palmour, John W. "Energy Efficiency: The Commercial Pull for SiC Devices". Materials Science Forum 527-529 (ottobre 2006): 1129–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1129.
Tan, Shih-Wei, e Shih-Wen Lai. "A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes". Advances in Materials Science and Engineering 2013 (2013): 1–4. http://dx.doi.org/10.1155/2013/531573.
Ведь, М. В., М. В. Дорохин, B. П. Лесников, Д. А. Павлов, Ю. В. Усов, А. В. Кудрин, П. Б. Дёмина, А. В. Здоровейщев e Ю. А. Данилов. "Диодные структуры на основе магнитных гетеропереходов (In, Fe)Sb/GaAs". Письма в журнал технической физики 45, n. 13 (2019): 33. http://dx.doi.org/10.21883/pjtf.2019.13.47955.17812.
Wang, Xiaolei, Xupeng Sun, Shuainan Cui, Qianqian Yang, Tianrui Zhai, Jinliang Zhao, Jinxiang Deng e Antonio Ruotolo. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions". Sensors 21, n. 9 (25 aprile 2021): 3009. http://dx.doi.org/10.3390/s21093009.
Lakhdari, Issam, Nouredine Sengouga, Madani Labed, Toufik Tibermacine, Riaz Mari e Mohamed Henini. "Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes". Semiconductor Science and Technology 37, n. 5 (13 aprile 2022): 055022. http://dx.doi.org/10.1088/1361-6641/ac612a.
Fischler, W., P. Buchberger, R. A. Höpfel e G. Zandler. "Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes". Applied Physics Letters 68, n. 20 (13 maggio 1996): 2778–80. http://dx.doi.org/10.1063/1.116604.
Ashkinazi, G., B. Meyler, M. Nathan, L. Zolotarevski e O. Zolotarevski. "Breakdown voltage of high-voltage GaAs Schottky diodes". Solid-State Electronics 36, n. 12 (dicembre 1993): 1793–94. http://dx.doi.org/10.1016/0038-1101(93)90229-j.
Adams, J. G., A. Jelenski, D. H. Navon e Ting-Wei Tang. "Numerical analysis of GaAs epitaxial-layer Schottky diodes". IEEE Transactions on Electron Devices 34, n. 9 (settembre 1987): 1963–70. http://dx.doi.org/10.1109/t-ed.1987.23182.
Crowe, T. W., e R. J. Mattauch. "Conversion Loss in GaAs Schottky-Barrier Mixer Diodes". IEEE Transactions on Microwave Theory and Techniques 34, n. 7 (luglio 1986): 753–60. http://dx.doi.org/10.1109/tmtt.1986.1133437.
Sharda, H., K. Prasad, L. Faraone e A. G. Nassibian. "Annealing studies on Pd/n-GaAs Schottky diodes". Semiconductor Science and Technology 6, n. 8 (1 agosto 1991): 765–70. http://dx.doi.org/10.1088/0268-1242/6/8/009.
Paccagnella, A., A. Callegari, E. Latta e M. Gasser. "Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces". Applied Physics Letters 55, n. 3 (17 luglio 1989): 259–61. http://dx.doi.org/10.1063/1.101922.
Yasuoka, Yoshizumi, Hiromitsu Takao e Narumi Inoue. "Fabrication of sub-0.5-micron GaAs Schottky diodes". Microelectronic Engineering 11, n. 1-4 (aprile 1990): 101–4. http://dx.doi.org/10.1016/0167-9317(90)90081-4.
Gao, Xian, Ji Long Tang, Dan Fang, Fang Chen, Shuang Peng Wang, Hai Feng Zhao, Xuan Fang et al. "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes". Advanced Materials Research 1118 (luglio 2015): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.270.
Martinez Gil, Javier, Diego Moro-Melgar, Artur Negrus, Ion Oprea e Oleg Cojocari. "Efficiency Assessment of Traditional GaAs and Low-Power InGaAs Schottky Diodes in Full-Band Mixers at 0.3 THz". Electronics 12, n. 21 (3 novembre 2023): 4518. http://dx.doi.org/10.3390/electronics12214518.
Klyuev, Alexey V., e Arkady V. Yakimov. "Investigation of 1/f Noise and Superimposed RTS Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes". Fluctuation and Noise Letters 14, n. 04 (9 novembre 2015): 1550041. http://dx.doi.org/10.1142/s0219477515500418.
Prikhodko, A., I. Belikov, D. Mikhailov, A. Shurakov e G. Goltsman. "Towards multipixel THz Schottky diode detector with a single RF output line". Journal of Physics: Conference Series 2086, n. 1 (1 dicembre 2021): 012063. http://dx.doi.org/10.1088/1742-6596/2086/1/012063.
Uchida, Yoko, Tatsuo Yokotsuka, Hisao Nakashima e Shinichiro Takatani. "Electrical properties of thermally stable LaB6/GaAs Schottky diodes". Applied Physics Letters 50, n. 11 (16 marzo 1987): 670–72. http://dx.doi.org/10.1063/1.98061.
Arakaki, Hisashi, Kazutoshi Ohashi e Tomoko Sudou. "Sputter-induced defects in Zn-doped GaAs Schottky diodes". Semiconductor Science and Technology 19, n. 1 (30 ottobre 2003): 127–32. http://dx.doi.org/10.1088/0268-1242/19/1/021.
Zaidi, S. H., e A. K. Jonscher. "Spectroscopy of delayed electronic transitions in GaAs Schottky diodes". Semiconductor Science and Technology 2, n. 9 (1 settembre 1987): 587–96. http://dx.doi.org/10.1088/0268-1242/2/9/005.
Lalinský, T., D. Gregušová, Ž. Mozolová, J. Breza e P. Vogrinčič. "High‐temperature stable Ir‐Al/n‐GaAs Schottky diodes". Applied Physics Letters 64, n. 14 (4 aprile 1994): 1818–20. http://dx.doi.org/10.1063/1.111988.
Lechuga, L. M., A. Calle, D. Golmayo e F. Briones. "The ammonia sensitivity of Pt/GaAs Schottky barrier diodes". Journal of Applied Physics 70, n. 6 (15 settembre 1991): 3348–54. http://dx.doi.org/10.1063/1.349270.
Shepherd, P. R., e M. J. Cryan. "Schottky diodes for analogue phase shifters in GaAs MMICs". IEEE Transactions on Microwave Theory and Techniques 44, n. 11 (1996): 2112–16. http://dx.doi.org/10.1109/22.543970.
Svensson, Stefan P. "Al–Ga–GaAs multimetal Schottky diodes prepared by MBE". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, n. 2 (marzo 1985): 760. http://dx.doi.org/10.1116/1.583137.
St. Jean, C. A., W. L. Bishop, B. K. Sarpong, S. M. Marazita e T. W. Crowe. "Novel fabrication of Ti-Pt-Au/GaAs Schottky diodes". IEEE Transactions on Electron Devices 47, n. 7 (luglio 2000): 1465–68. http://dx.doi.org/10.1109/16.848293.
Röser, H. P., H. W. Hübers, T. W. Crowe e W. C. B. Peatman. "Nanostructure GaAS Schottky diodes for far-infrared heterodyne receivers". Infrared Physics & Technology 35, n. 2-3 (marzo 1994): 451–62. http://dx.doi.org/10.1016/1350-4495(94)90102-3.
Vearey-Roberts, A. R., e D. A. Evans. "Modification of GaAs Schottky diodes by thin organic interlayers". Applied Physics Letters 86, n. 7 (2005): 072105. http://dx.doi.org/10.1063/1.1864255.
Von Roos, O., e Ke-Li Wang. "Conversion Losses in GaAs Schottky-Barrier Diodes (Short Paper)". IEEE Transactions on Microwave Theory and Techniques 34, n. 1 (gennaio 1986): 183–88. http://dx.doi.org/10.1109/tmtt.1986.1133301.
Eftekhari, G. "Electrical characteristics of selenium-treated GaAs MIS Schottky diodes". Semiconductor Science and Technology 8, n. 3 (1 marzo 1993): 409–11. http://dx.doi.org/10.1088/0268-1242/8/3/018.
Lin, Chia-Chien, e Meng-Chyi Wu. "Electrical and structural properties of Re/GaAs Schottky diodes". Journal of Applied Physics 85, n. 7 (aprile 1999): 3893–96. http://dx.doi.org/10.1063/1.369777.
Zheng, Renzhou, Jingbin Lu, Xiaoyi Li, Yu Wang, Yumin Liu, Xu Xu, Ziyi Chen e Xue Zhang. "Optimization design of GaAs-based betavoltaic batteries with p–n junction and Schottky barrier structures". Journal of Physics D: Applied Physics 55, n. 19 (16 febbraio 2022): 194003. http://dx.doi.org/10.1088/1361-6463/ac526a.
YILDIRIM, NEZIR, ABDULMECIT TURUT e HULYA DOGAN. "CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS". Surface Review and Letters 25, n. 04 (11 maggio 2018): 1850082. http://dx.doi.org/10.1142/s0218625x18500828.
Ismail, A., J. M. Palau, E. Vieujot e L. Lassabatere. "Electron beam effect on GaAs real surfaces and on Ag-GaAs Schottky diodes". Surface Science Letters 157, n. 2-3 (luglio 1985): A386. http://dx.doi.org/10.1016/0167-2584(85)91097-7.
Ismail, A., J. M. Palau, E. Vieujot e L. Lassabatere. "Electron beam effect on GaAs real surfaces and on AgGaAs schottky diodes". Surface Science 157, n. 2-3 (luglio 1985): 319–26. http://dx.doi.org/10.1016/0039-6028(85)90675-2.
Schmutzler, H. J., W. Platen, D. Kohl e K. Wolter. "Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes". Materials Science Forum 38-41 (gennaio 1991): 1409–14. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1409.