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Articoli di riviste sul tema "Ga)Se2"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 13 febbraio 2022

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1

Бородавченко, О. М., В. Д. Живулько, А. В. Мудрый, М. В. Якушев e И. А. Могильников. "Излучательная рекомбинация на ионно-индуцированных дефектах в тонких пленках твердых растворов Cu(In, Ga)Se-=SUB=-2-=/SUB=-". Физика и техника полупроводников 55, n. 2 (2021): 127. http://dx.doi.org/10.21883/ftp.2021.02.50497.9532.

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In thin films of Cu(In,Ga)Se2 solid solutions radiation-induced effects after irradiation of hydrogen ions with an energy of 2.5, 5 and 10 keV with dose of ~ 3∙10^15 cm-2 were studied. A comparative analysis of the optical characteristics of non-implanted and implanted Cu(In,Ga)Se2 thin films was carried out based on the measurements of photoluminescence spectra and the luminescence excitation spectra at liquid helium temperature of ~ 4.2 K. The bandgap of Cu(In,Ga)Se2 solid solutions determined from the data of mathematical processing of the luminescence excitation spectra was ~ 1.171 eV. An intense band with a maximum of ~ 1.089 eV was found in the photoluminescence spectra of non-implanted and hydrogen-implanted Cu(In,Ga)Se2 thin films caused by the recombination of free electrons with holes localized in the tails of the valence band. It was established that appearance of intense broad bands in the photoluminescence spectra with maxima in the energy range of ~ 0.92 eV and ~ 0.77 eV is due to radiative recombination of nonequilibrium charge carriers at deep energy levels of acceptor type ion-induced defects formed in the bandgap of Cu(In,Ga)Se2 solid solutions. The conditions for the appearance of the ionic passivation effect of dangling electronic bonds on the surface and in the bulk of Cu(In,Ga)Se2 polycrystalline films, possible nature of point defects in the structure and the mechanisms of radiative recombination are discussed.

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2

Gonçalves, Bruna F., Alec P. LaGrow, Sergey Pyrlin, Bryan Owens-Baird, Gabriela Botelho, Luis S. A. Marques, Marta M. D. Ramos, Kirill Kovnir, Senentxu Lanceros-Mendez e Yury V. Kolen’ko. "Large-Scale Synthesis of Semiconducting Cu(In,Ga)Se2 Nanoparticles for Screen Printing Application". Nanomaterials 11, n. 5 (28 aprile 2021): 1148. http://dx.doi.org/10.3390/nano11051148.

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During the last few decades, the interest over chalcopyrite and related photovoltaics has been growing due the outstanding structural and electrical properties of the thin-film Cu(In,Ga)Se2 photoabsorber. More recently, thin film deposition through solution processing has gained increasing attention from the industry, due to the potential low-cost and high-throughput production. To this end, the elimination of the selenization procedure in the synthesis of Cu(In,Ga)Se2 nanoparticles with following dispersion into ink formulations for printing/coating deposition processes are of high relevance. However, most of the reported syntheses procedures give access to tetragonal chalcopyrite Cu(In,Ga)Se2 nanoparticles, whereas methods to obtain other structures are scarce. Herein, we report a large-scale synthesis of high-quality Cu(In,Ga)Se2 nanoparticles with wurtzite hexagonal structure, with sizes of 10–70 nm, wide absorption in visible to near-infrared regions, and [Cu]/[In + Ga] ≈ 0.8 and [Ga]/[Ga + In] ≈ 0.3 metal ratios. The inclusion of the synthesized NPs into a water-based ink formulation for screen printing deposition results in thin films with homogenous thickness of ≈4.5 µm, paving the way towards environmentally friendly roll-to-roll production of photovoltaic systems.

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3

Nishiwaki, S., T. Satoh, S. Hayashi, Y. Hashimoto, T. Negami e T. Wada. "Preparation of Cu(In,Ga)Se2 thin films from In–Ga–Se precursors for high-efficiency solar cells". Journal of Materials Research 14, n. 12 (dicembre 1999): 4514–20. http://dx.doi.org/10.1557/jmr.1999.0613.

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Growth of Cu(In,Ga)Se2 (CIGS) films from In–Ga–Se precursors was characterized by scanning Auger electron spectroscopy (SAES), secondary ion mass spectroscopy (SIMS), x-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). In–Ga–Se precursor layers were deposited on Mo-coated soda-lime glass, and then the layers were exposed to Cu and Se fluxes to form CIGS films. The SIMS and SAES analyses showed a homogeneous distribution of Cu throughout the CIGS films during the deposition of Cu and Se. The phase changes observed in the CIGS films during the deposition of Cu and Se on the In–Ga–Se precursor films were as follows: (In,Ga)2Se3 →[Cu(In,Ga)5Se8] →Cu(In,Ga)3Se5 →Cu(In,Ga)Se2. The grain size increased from the submicron grains of the (In,Ga)2Se3 precursor film to several micrometers in the stoichiometric Cu(In,Ga)Se2 film. A growth model of CIGS crystals is introduced on the basis of the results of TEM observations. CIGS crystals are mainly grown under (In,Ga)-rich conditions in the preparation from In–Ga–Se precursor films.

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4

Keller, Debora, Stephan Buecheler, Patrick Reinhard, Fabian Pianezzi, Darius Pohl, Alexander Surrey, Bernd Rellinghaus, Rolf Erni e Ayodhya N. Tiwari. "Local Band Gap Measurements by VEELS of Thin Film Solar Cells". Microscopy and Microanalysis 20, n. 4 (2 aprile 2014): 1246–53. http://dx.doi.org/10.1017/s1431927614000543.

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AbstractThis work presents a systematic study that evaluates the feasibility and reliability of local band gap measurements of Cu(In,Ga)Se2 thin films by valence electron energy-loss spectroscopy (VEELS). The compositional gradients across the Cu(In,Ga)Se2 layer cause variations in the band gap energy, which are experimentally determined using a monochromated scanning transmission electron microscope (STEM). The results reveal the expected band gap variation across the Cu(In,Ga)Se2 layer and therefore confirm the feasibility of local band gap measurements of Cu(In,Ga)Se2 by VEELS. The precision and accuracy of the results are discussed based on the analysis of individual error sources, which leads to the conclusion that the precision of our measurements is most limited by the acquisition reproducibility, if the signal-to-noise ratio of the spectrum is high enough. Furthermore, we simulate the impact of radiation losses on the measured band gap value and propose a thickness-dependent correction. In future work, localized band gap variations will be measured on a more localized length scale to investigate, e.g., the influence of chemical inhomogeneities and dopant accumulations at grain boundaries.

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5

Vidal Lorbada, Ricardo, Thomas Walter, David Fuertes Marrón, Dennis Muecke, Tetiana Lavrenko, Oliver Salomon e Raymund Schaeffler. "Phototransistor Behavior in CIGS Solar Cells and the Effect of the Back Contact Barrier". Energies 13, n. 18 (11 settembre 2020): 4753. http://dx.doi.org/10.3390/en13184753.

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In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as open-circuit voltage, fill factor and the efficiency at normal operation conditions. A phototransistor model was proposed in previous works and could satisfactorily explain specific effects associated with the back contact barrier, such as the dependence of the saturated current in the forward bias on the illumination level. The effect of this contribution is also studied in this research in the context of metastable parameter drift, typical for Cu (In, Ga) Se2 thin-film solar cells, as a consequence of different bias or light soaking treatments under high-temperature conditions. The impact of the back contact barrier on Cu (In, Ga) Se2 thin-film solar cells is analyzed based on experimental measurements as well as numerical simulations with Technology Computer-Aided Design (TCAD). A barrier-lowering model for the molybdenum/Cu (In, Ga) Se2 Schottky interface was proposed to reach a better agreement between the simulations and the experimental results. Thus, in this work, the phototransistor behavior is discussed further in the context of metastabilities supported by numerical simulations.

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6

Hariskos, Dimitrios, Wolfram Hempel, Richard Menner e Wolfram Witte. "Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance". Applied Sciences 10, n. 3 (5 febbraio 2020): 1052. http://dx.doi.org/10.3390/app10031052.

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Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers on the interface formation and the performance of Cu(In,Ga)Se2 solar cells. The substrate temperature was increased from room temperature up to 240 °C, and the highest power conversion efficiencies were obtained at a temperature plateau around 200 °C, with the best values around 15.3%. Industrially relevant in-line co-evaporated polycrystalline Cu(In,Ga)Se2 absorber layers were used, which yield solar cell efficiencies of up to 17.1% in combination with a solution-grown CdS buffer. The chemical composition of the InxSy buffer as well as of the Cu(In,Ga)Se2/InxSy interface was analyzed by time-of-flight secondary ion mass spectrometry. Changes from homogenous and stoichiometric In2S3 layers deposited at RT to inhomogenous and more sulfur-rich and indium-deficient compositions for higher temperatures were observed. This finding is accompanied with a pronounced copper depletion at the Cu(In,Ga)Se2 absorber surface, and a sodium accumulation in the InxSy buffer and at the absorber/buffer interface. These last two features seem to be the origin for achieving the highest conversion efficiencies at substrate temperatures around 200 °C.

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7

Zhang, Xianfeng, Masakazu Kobayashi e Akira Yamada. "Comparison of Ag(In,Ga)Se2/Mo and Cu(In,Ga)Se2/Mo Interfaces in Solar Cells". ACS Applied Materials & Interfaces 9, n. 19 (5 maggio 2017): 16215–20. http://dx.doi.org/10.1021/acsami.7b02548.

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8

Liu, Jiang, Daming Zhuang, Hexin Luan, Mingjie Cao, Min Xie e Xiaolong Li. "Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target". Progress in Natural Science: Materials International 23, n. 2 (aprile 2013): 133–38. http://dx.doi.org/10.1016/j.pnsc.2013.02.006.

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9

Zhao, Yong Ping, Cong Chun Zhang, Gui Fu Ding e Yong Liang Wang. "Research and Characterization of an Absorber Layer Material — Cu(In,Ga)Se₂ Sputtered on Polyimide Substrate in Material Engineering". Advanced Materials Research 583 (ottobre 2012): 370–73. http://dx.doi.org/10.4028/www.scientific.net/amr.583.370.

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Cu(In,Ga)Se2 is a very important type of absorber layer material for high efficiency solar cells in material engineering. Cu(In,Ga)Se2 thin films were prepared on polyimide (PI) substrates coated with Mo by RF magnetron sputtering in one-stage at temperature below 450 °C. Samples with high level crystallization were deposited on polyimide coated with Mo by optimizing process parameters. Lower electric resistivity, better quality of CIGS absorber layer was fabricated in lower temperature by sputtering.

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10

Simchi, Hamed, Brian E. McCandless, T. Meng, Jonathan H. Boyle e William N. Shafarman. "MoO3 back contact for CuInSe2-based thin film solar cells". MRS Proceedings 1538 (2013): 173–78. http://dx.doi.org/10.1557/opl.2013.1018.

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ABSTRACTMoO3 films with a high work function (5.5 eV), high transparency, and a wide bandgap (3.0 - 3.4 eV) are a potential candidate for the primary back contact of Cu(InGa)Se2 thin film solar cells. This may be advantageous to form ohmic contact in superstrate devices where the back contact will be deposited after the Cu(InGa)Se2 layer and MoSe2 layer doesn’t form during Cu(InGa)Se2 deposition. In addition, the MoO3 may be incorporated in a transparent back contact in tandem or bifacial cells. In this study, MoO3 films for use as a back contact for Cu(In,Ga)Se2 thin film solar cells were prepared by reactive rf sputtering with O2/(O2+Ar) = 35%. The effect of post processing on the structural properties of the deposited films were investigated using x-ray diffraction and scanning electron microscopy. Annealing resulted in crystallization of the films to the α-MoO3 phases at 400°C. Increasing the oxygen partial pressure had no significant effect on optical transmittance of the films, and bandgaps in the range of 2.6-2.9 eV and 3.1-3.4 eV were obtained for the as deposited and annealed films, respectively. Cu(In,Ga)Se2 thin film solar cells prepared using an as-deposited Mo-MoO3 back contact yielded an efficiency of >14% with VOC = 647 (mV), JSC = 28.4 (mA), and FF. = 78.1%. Cells with ITO-MoO3 back contact showed an efficiency of ∼12% with VOC = 642 (mV), JSC = 26.8 (mA), and FF. = 69.2%. The efficiency of cells with an annealed MoO3 back contact was limited to 4%, showing a blocking diode behavior in the forward bias J-V curve. This may be caused by the presence of a barrier between the valence bands of the Cu(In,Ga)Se2 and MoO3, due to the higher bandgap of the annealed MoO3 films. SEM cross section studies showed uniform coverage of the as-deposited MoO3 layer and formation of voids for the annealed MoO3 film. Structural orientation of the Cu(In,Ga)Se2 absorber layer was also altered by the MoO3 film and less-oriented films were observed for either cases.

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11

Chakrabarti, R., B. Maiti, S. Chaudhuri e A. K. Pal. "Photoconductivity of Cu(In, Ga) Se2 films". Solar Energy Materials and Solar Cells 43, n. 3 (ottobre 1996): 237–47. http://dx.doi.org/10.1016/0927-0248(95)00174-3.

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12

Rega, N., S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M. Ch Lux-Steiner, R. Kniese e M. J. Romero. "Excitonic luminescence of Cu(In,Ga)Se2". Thin Solid Films 480-481 (giugno 2005): 286–90. http://dx.doi.org/10.1016/j.tsf.2004.11.079.

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13

Wagner, Mt, I. Dirnstorfer, D. M. Hofmann, M. D. Lampert, F. Karg e B. K. Meyer. "Characterization of CuIn(Ga)Se2 Thin Films". physica status solidi (a) 167, n. 1 (maggio 1998): 131–42. http://dx.doi.org/10.1002/(sici)1521-396x(199805)167:1<131::aid-pssa131>3.0.co;2-f.

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Wagner, Mt, D. M. Hofmann, I. Dirnstorfer, M. D. Lampert, F. Karg e B. K. Meyer. "Characterization of CuIn(Ga)Se2 Thin Films". physica status solidi (a) 168, n. 1 (luglio 1998): 153–61. http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<153::aid-pssa153>3.0.co;2-x.

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15

Dirnstorfer, I., Mt Wagner, D. M. Hofmann, M. D. Lampert, F. Karg e B. K. Meyer. "Characterization of CuIn(Ga)Se2 Thin Films". physica status solidi (a) 168, n. 1 (luglio 1998): 163–75. http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<163::aid-pssa163>3.0.co;2-t.

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16

Engelhardt, F., M. Schmidt, Th Meyer, O. Seifert, J. Parisi e U. Rau. "Metastable electrical transport in Cu(In,Ga)Se2 thin films and ZnO/CdS/Cu(In,Ga)Se2 heterostructures". Physics Letters A 245, n. 5 (agosto 1998): 489–93. http://dx.doi.org/10.1016/s0375-9601(98)00401-0.

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17

Minemoto, Takashi, Yasuhiro Hashimoto, Takuya Satoh, Takayuki Negami, Hideyuki Takakura e Yoshihiro Hamakawa. "Cu(In,Ga)Se2 solar cells with controlled conduction band offset of window/Cu(In,Ga)Se2 layers". Journal of Applied Physics 89, n. 12 (15 giugno 2001): 8327–30. http://dx.doi.org/10.1063/1.1366655.

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18

Abou-Ras, Daniel, Raquel Caballero, Cornelia Streeck, Burkhard Beckhoff, Jung-Hwan In e Sungho Jeong. "Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films: Additional Techniques". Microscopy and Microanalysis 21, n. 6 (14 settembre 2015): 1644–48. http://dx.doi.org/10.1017/s1431927615015093.

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AbstractIn a recent publication by Abou-Ras et al., various techniques for the analysis of elemental distribution in thin films were compared, using the example of a 2-µm thick Cu(In,Ga)Se2 thin film applied as an absorber material in a solar cell. The authors of this work found that similar relative Ga distributions perpendicular to the substrate across the Cu(In,Ga)Se2 thin film were determined by 18 different techniques, applied on samples from the same identical deposition run. Their spatial and depth resolutions, their measuring speeds, their availabilities, as well as their detection limits were discussed. The present work adds two further techniques to this comparison: laser-induced breakdown spectroscopy and grazing-incidence X-ray fluorescence analysis.

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19

Liu Fang-Fang, Sun Yun e He Qing. "Influences of Ga gradient distribution on Cu(In, Ga)Se2 film". Acta Physica Sinica 63, n. 4 (2014): 047201. http://dx.doi.org/10.7498/aps.63.047201.

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20

Haarstrich, J., H. Metzner, C. Ronning, A. Undisz, T. Rissom, C. A. Kaufmann e H. W. Schock. "Luminescence properties of Ga-graded Cu(In,Ga)Se2 thin films". Thin Solid Films 520, n. 9 (febbraio 2012): 3657–62. http://dx.doi.org/10.1016/j.tsf.2011.12.012.

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Klinkert, T., M. Jubault, F. Donsanti, D. Lincot e J. F. Guillemoles. "Ga gradients in Cu(In,Ga)Se2: Formation, characterization, and consequences". Journal of Renewable and Sustainable Energy 6, n. 1 (gennaio 2014): 011403. http://dx.doi.org/10.1063/1.4866255.

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22

Dittrich, Th, A. Gonzáles, T. Rada, T. Rissom, E. Zillner, S. Sadewasser e M. Lux-Steiner. "Comparative study of Cu(In,Ga)Se2/CdS and Cu(In,Ga)Se2/In2S3 systems by surface photovoltage techniques". Thin Solid Films 535 (maggio 2013): 357–61. http://dx.doi.org/10.1016/j.tsf.2012.12.078.

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Dyk, E. E. van, C. Radue e A. R. Gxasheka. "Characterization of Cu(In,Ga)Se2 photovoltaic modules". Thin Solid Films 515, n. 15 (maggio 2007): 6196–99. http://dx.doi.org/10.1016/j.tsf.2006.12.065.

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Harel, S., P. Jonnard, T. Lepetit, L. Arzel e N. Barreau. "Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization". Applied Surface Science 473 (aprile 2019): 1062–65. http://dx.doi.org/10.1016/j.apsusc.2018.12.062.

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Lin, Y. C., Z. Q. Lin, C. H. Shen, L. Q. Wang, C. T. Ha e Chris Peng. "Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets". Journal of Materials Science: Materials in Electronics 23, n. 2 (10 giugno 2011): 493–500. http://dx.doi.org/10.1007/s10854-011-0424-8.

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Rau, U., T. C. M. Müller, T. M. H. Tran, B. E. Pieters e A. Gerber. "Electroluminescence of Cu(In,Ga)Se2 solar cells and modules". MRS Proceedings 1538 (2013): 133–44. http://dx.doi.org/10.1557/opl.2013.979.

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ABSTRACTFundamental aspects of (electro-)luminescence of Cu(In,Ga)Se2 solar cells and modules are investigated by means of spectrally and spatially resolved measurements. The validity of the reciprocity relation between spectrally resolved electroluminescence emission and photovoltaic quantum efficiency is verified for the case of industrially produced ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Further we find that photo- and electroluminescent emission in these devices obey a superposition principle only in a limited range of the applied electrical or illumination bias. This range depends on the light soaking history of the sample and extends up to an injected current density of approximately 15 mAcm-2 after 3 h of light soaking at a temperature of 400 K. In the state prior to light soaking this range is limited to 4 mAcm-2. At higher bias, a characteristic discrepancy between electroluminescence and electro-modulated photoluminescence appears. We attribute this anomaly to a potential barrier behavior close to the CdS/ Cu(In,Ga)Se2 interface. Metastable defect reactions induced by holes injected into the space charge region partly reduce this barrier. We further find that the luminescence efficiency is enhanced by a factor of 3 by light soaking at 400 K. Spatially resolved electroluminescence measurements conducted during application of voltage or current bias at ambient temperature in the dark are qualitatively compatible with the conclusions drawn from the spectrally resolved measurements.

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Edoff, Marika, Sebastian Schleussner, Erik Wallin e Olle Lundberg. "Technological and economical aspects on the influence of reduced Cu(In,Ga)Se2 thickness and Ga grading for co-evaporated Cu(In,Ga)Se2 modules". Thin Solid Films 519, n. 21 (agosto 2011): 7530–33. http://dx.doi.org/10.1016/j.tsf.2011.01.369.

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Timmo, K., M. Kauk-Kuusik, M. Pilvet, M. Altosaar, M. Grossberg, M. Danilson, R. Kaupmees, V. Mikli, J. Raudoja e T. Varema. "Cu(In,Ga)Se2 monograin powders with different Ga content for solar cells". Solar Energy 176 (dicembre 2018): 648–55. http://dx.doi.org/10.1016/j.solener.2018.10.078.

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Minoura, Shota, Takuji Maekawa, Keita Kodera, Akihiro Nakane, Shigeru Niki e Hiroyuki Fujiwara. "Optical constants of Cu(In, Ga)Se2 for arbitrary Cu and Ga compositions". Journal of Applied Physics 117, n. 19 (21 maggio 2015): 195703. http://dx.doi.org/10.1063/1.4921300.

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Zhu, Xiaobo, Tzu-Huan Cheng e Chee Wee Liu. "Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules". Electronic Materials Letters 12, n. 4 (luglio 2016): 506–11. http://dx.doi.org/10.1007/s13391-016-4014-z.

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Li, Jian V., Lorelle M. Mansfield, Brian Egaas e Kannan Ramanathan. "Electrical properties of CdS/Cu(In,Ga)Se2 interface". Japanese Journal of Applied Physics 57, n. 8 (27 giugno 2018): 085701. http://dx.doi.org/10.7567/jjap.57.085701.

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Sakurai, Takeaki, Keiki Taguchi, Muhammad Monirul Islam, Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Shigeru Niki e Katsuhiro Akimoto. "Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2". Japanese Journal of Applied Physics 50, n. 5S2 (1 maggio 2011): 05FC01. http://dx.doi.org/10.7567/jjap.50.05fc01.

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Rockett, A., D. Liao, J. T. Heath, J. D. Cohen, Y. M. Strzhemechny, L. J. Brillson, K. Ramanathan e W. N. Shafarman. "Near-surface defect distributions in Cu(In,Ga)Se2". Thin Solid Films 431-432 (maggio 2003): 301–6. http://dx.doi.org/10.1016/s0040-6090(03)00148-2.

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Ott, Thomas, Thomas Walter e Thomas Unold. "Phototransistor effects in Cu(In,Ga)Se2 solar cells". Thin Solid Films 535 (maggio 2013): 275–78. http://dx.doi.org/10.1016/j.tsf.2012.11.084.

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Schlenker, T., V. Laptev, H. W. Schock e J. H. Werner. "Substrate influence on Cu(In,Ga)Se2 film texture". Thin Solid Films 480-481 (giugno 2005): 29–32. http://dx.doi.org/10.1016/j.tsf.2004.11.034.

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Powalla, Michael, Philip Jackson, Wolfram Witte, Dimitrios Hariskos, Stefan Paetel, Carsten Tschamber e Wiltraud Wischmann. "High-efficiency Cu(In,Ga)Se2 cells and modules". Solar Energy Materials and Solar Cells 119 (dicembre 2013): 51–58. http://dx.doi.org/10.1016/j.solmat.2013.05.002.

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West, Bradley M., Michael Stuckelberger, Barry Lai, Jörg Maser e Mariana I. Bertoni. "Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers". Journal of Physical Chemistry C 122, n. 40 (30 agosto 2018): 22897–902. http://dx.doi.org/10.1021/acs.jpcc.8b05062.

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Sakurai, Takeaki, Keiki Taguchi, Muhammad Monirul Islam, Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Shigeru Niki e Katsuhiro Akimoto. "Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2". Japanese Journal of Applied Physics 50, n. 5 (20 maggio 2011): 05FC01. http://dx.doi.org/10.1143/jjap.50.05fc01.

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Rud, V. Yu, Yu V. Rud, V. F. Gremenok e V. B. Zalesski. "Cd-free Cu(In,Ga)Se2/In2S3thin-film heterostructures". physica status solidi (c) 6, n. 5 (maggio 2009): 1269–72. http://dx.doi.org/10.1002/pssc.200881173.

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Amara, A., A. Drici e M. Guerioune. "Electrical characterisation of Cu(In, Ga)Se2 single crystals". physica status solidi (a) 195, n. 2 (gennaio 2003): 405–11. http://dx.doi.org/10.1002/pssa.200305921.

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Schleussner, Sebastian Michael, Jonas Pettersson, Tobias Törndahl e Marika Edoff. "Surface engineering in Cu(In,Ga)Se2 solar cells". Progress in Photovoltaics: Research and Applications 21, n. 4 (20 novembre 2011): 561–68. http://dx.doi.org/10.1002/pip.1229.

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Bednar, N., N. Severino e N. Adamovic. "Modelling of Cu(In,Ga)Se2 Solar Materials/Devices". Journal of Green Engineering 5, n. 4 (2016): 1–10. http://dx.doi.org/10.13052/jge1904-4720.5341.

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Mansfield, Lorelle M., Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay DeHart e Kannan Ramanathan. "Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2". IEEE Journal of Photovoltaics 5, n. 6 (novembre 2015): 1769–74. http://dx.doi.org/10.1109/jphotov.2015.2470082.

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Sakurai, T., N. Ishida, S. Ishizuka, M. M. Islam, A. Kasai, K. Matsubara, K. Sakurai, A. Yamada, K. Akimoto e S. Niki. "Effects of annealing under various atmospheres on electrical properties of Cu(In,Ga)Se2 films and CdS/Cu(In,Ga)Se2 heterostructures". Thin Solid Films 516, n. 20 (agosto 2008): 7036–40. http://dx.doi.org/10.1016/j.tsf.2007.12.135.

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Lee, Dong-Won, Won-Ju Cho, Jun-Kwang Song, Oh-Yun Kwon, Won-Hee Lee, Chi-Hong Park, Kyung-Eun Park, Heesoo Lee e Yong-Nam Kim. "Failure analysis of Cu(In,Ga)Se2 photovoltaic modules: degradation mechanism of Cu(In,Ga)Se2 solar cells under harsh environmental conditions". Progress in Photovoltaics: Research and Applications 23, n. 7 (25 aprile 2014): 829–37. http://dx.doi.org/10.1002/pip.2497.

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Nishimura, Takahito, Hiroki Sugiura, Kazuyoshi Nakada e Akira Yamada. "Characterization of Interface Between Accurately Controlled Cu-Deficient Layer and Cu(In,Ga)Se2 Absorber for Cu(In,Ga)Se2 Solar Cells". physica status solidi (RRL) - Rapid Research Letters 12, n. 8 (16 maggio 2018): 1800129. http://dx.doi.org/10.1002/pssr.201800129.

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Urbaniak, A., e M. Igalson. "Relaxation of light induced metastabilities in Cu(In,Ga)Se2 with different Ga content". Thin Solid Films 517, n. 7 (febbraio 2009): 2231–34. http://dx.doi.org/10.1016/j.tsf.2008.10.117.

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Han, Jun-feng, Cheng Liao, Tao Jiang, Hua-mu Xie e Kui Zhao. "Investigation of Cu(In,Ga)Se2 polycrystalline growth: Ga diffusion and surface morphology evolution". Materials Research Bulletin 49 (gennaio 2014): 187–92. http://dx.doi.org/10.1016/j.materresbull.2013.08.073.

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Teixeira, Jennifer P., Ricardo B. L. Vieira, Bruno P. Falcão, Marika Edoff, Pedro M. P. Salomé e Joaquim P. Leitão. "Recombination Channels in Cu(In,Ga)Se2 Thin Films: Impact of the Ga-Profile". Journal of Physical Chemistry C 124, n. 23 (13 maggio 2020): 12295–304. http://dx.doi.org/10.1021/acs.jpcc.0c02622.

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Hu, Zhaojing, Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Chaojie Wang, Zhiqiang Zhou, Fangfang Liu, Yun Sun e Wei Liu. "Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process". Chinese Optics Letters 19, n. 11 (2021): 114001. http://dx.doi.org/10.3788/col202119.114001.

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