Letteratura scientifica selezionata sul tema "Énergie de la bande interdite"
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Articoli di riviste sul tema "Énergie de la bande interdite"
Roncali, J., H. Brisset, C. Thobie-Gautier, M. Jubault e A. Gorgues. "Polymères conjugués à faible bande interdite dérivés de bithiophènes rigidifiés". Journal de Chimie Physique 92 (1995): 771–74. http://dx.doi.org/10.1051/jcp/1995920771.
Testo completoToulouse, B., F. Morales e S. Rolland. "Variation de l'énergie de la bande interdite de PbTe en fonction de la température". Journal de Physique 46, n. 6 (1985): 959–64. http://dx.doi.org/10.1051/jphys:01985004606095900.
Testo completoZou, Q., B. E. Benkelfat e A. Ramdane. "Relation de type Kramers-Krönig dans une structure à bande interdite photonique périodique et unidimensionnelle". Journal de Physique IV (Proceedings) 119 (novembre 2004): 293–94. http://dx.doi.org/10.1051/jp4:2004119102.
Testo completoRoncali, J., C. Thobie-Gautier, H. Brisset, M. Jubault e A. Gorgues. "La rigidification : une stratégie efficace d'accès à des polymères et oligomères conjugués à faible bande interdite". Journal de Chimie Physique 92 (1995): 767–70. http://dx.doi.org/10.1051/jcp/1995920767.
Testo completoProvino, Laurent, Achille Monteville, David Landais, Olivier Le Goffic, Adil Haboucha, Thiery Taunay e David Mechin. "Les fibres microstructurées : 20 ans d’existence et un vaste éventail d’applications". Photoniques, n. 99 (novembre 2019): 40–44. http://dx.doi.org/10.1051/photon/20199940.
Testo completoSafta, Nabil. "Modes des fluctuations de la bande interdite en fonction de la composition en élément d'alliage de Cd1-xZnxS". Annales de Chimie Science des Matériaux 29, n. 5 (settembre 2004): 105–12. http://dx.doi.org/10.3166/acsm.29.5.105-112.
Testo completoBen Slimane, Hassane, e Abderrachid Helmaoui. "Etude analytique d’une cellule solaire à hétérojonction p+ (GaAs)/n (AlxGa1-xAs)/N (Al0.4Ga0.6As)". Journal of Renewable Energies 11, n. 2 (30 giugno 2008). http://dx.doi.org/10.54966/jreen.v11i2.75.
Testo completoRivoal, Isabelle, e Marc Armspach. "L’atelier de Marko. Énergie, intention, ambiance et technique(s) : un dessinateur de bande dessinée à l’œuvre". Images du travail, travail des images, n. 14 (1 febbraio 2023). http://dx.doi.org/10.4000/itti.3882.
Testo completoTesi sul tema "Énergie de la bande interdite"
Jacopin, Gwenolé. "Nanofils de semiconducteurs à grande énergie de bande interdite pour des applications optoélectroniques". Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00746091.
Testo completoEl, Kholdi El Mostafa. "Contribution à l'étude des propriétés magnétiques et de transport d'un nouveau semiconducteur semimagnétique à bande interdite de largeur nulle Hg1-xCoxSe". Montpellier 2, 1993. http://www.theses.fr/1993MON20126.
Testo completoMorais, Andrade Pedro Henrique. "Interactions hôte-invité entre l'iode gazeux et les matériaux de type MOF : dynamique et réactivité". Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILR094.
Testo completoThis work describes the synthesis and properties of three families of MOF materials (UiO-6x, MIL-125, CAU-1) used to trap iodine molecules. A first study investigates charge transfer complexes between iodine molecules and MOF frameworks upon adsorption, finding that hafnium-based UiO-66 compounds showed enhanced iodine uptake and transformation into I3-. In this case, a mechanism involving electron transfer from the organic linker to iodine was proposed. Using single crystals of UiO-67(Zr,Hf)_NH2 and taking advantage of Raman resonance effect, the higher stability of the I3- species was put forward by performing Raman mapping. Crystal size was shown to significantly affect iodine adsorption kinetics. In comparison to their aluminum-based structural analogue, MIL-125(Ti) and MIL-125(Ti)_NH2 MOFs demonstrated faster iodine adsorption kinetics due to efficient charge separation. In this case, thermal desorption experiments showed the stability of I3- species, particularly in the presence of -NH2 groups. Moreover, contrary to what is observed for zirconium and hafnium-based MOFs, the influence of titanium in the adsorption and reduction mechanism of I2 is highlighted through a change of the Ti4+ cations' oxidation state. As the band gap energy of MOF materials exhibited an effect over the charge transfer complexes involved in the reaction mechanism for different I2@MOF systems, a combination of methodologies was proposed to determine band gap energies and types using only diffuse reflectance UV-Vis data. The study emphasizes how confinement in porous materials can alter properties and stabilization mechanisms, influencing adsorption and reactivity
Loucif, Abdelhalim. "Caractérisation photoélectrochimique des oxydes formés sur alliages base nickel en milieu primaire des réacteurs à eau pressurisée". Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00842998.
Testo completoRaymond, Stéphane. "Excitations de basse énergie dans les fermions lourds par diffusion inélastique des neutrons". Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10103.
Testo completoSall, Mamour. "Irradiation par des ions de grande énergie de semiconducteurs III-N (AlN, GaN, InN) : création de défauts ponctuels et étendus". Phd thesis, Université de Caen, 2013. http://tel.archives-ouvertes.fr/tel-00936879.
Testo completoMafouana, Rodrigue Roland. "Elaboration des matériaux à bande interdite photonique". Université Louis Pasteur (Strasbourg) (1971-2008), 2006. https://publication-theses.unistra.fr/public/theses_doctorat/2006/MAFOUANA_Rodrigue_Roland_2006.pdf.
Testo completoThe first phase of the project was the development of the opals, particularly the preparation of colloid suspensions by the Stöber reaction. To achieve self-organization of the silica particles with a good quality, we worked on the refinement of the size distribution of the silica particles. We showed that, for our operational device, it is necessary for the reagents to be purified and moderated at 40°C then that the reaction is carried out under moderate agitation (500 tr. Min-1). The colloidal suspensions are stabilized by extraction of the particles and handing-over in suspension in water then by heating with 120°/30 min. The colloidal spheres internal structure shows nanoporosity. The opals were worked out by electrosedimentation and were consolidated at 950°C. The optimal optical properties, maximum reflectivity, were obtained for a 4 hours annealing. The second part of this work consisted in using the silica opal as preforms to infiltrate the porous network and to build inverse opals more promising in term of photonic crystals. We infiltrated the previous opals with materials having a strong index (TiO2, ZrO2, magnetics metals, Au) either by successive infiltrations cycles or by electrocrystallization. The second method gave the most satisfying results. The third part of this work is related to the development of a method to elaborate photonic crystal by depositing successive monolayers of silica particles. On a substrate good quality monolayers were obtained with colloidal suspensions containing between 5. 5 and 9 M of silica in the form of particles of approximately 300 nm and a speed of extraction of 11,5 mm. Min-1. These two-dimensional meta-crystals of hexagonal symmetry show a good of diffraction yield. On the other hand the quality of the following layers degrades quickly. The mechanical stability and great structure quality of the monolayer of silica balls on these substrates made possible their use for the 2D nanostructuration of metal studs and the realization of the DFB laser
Mafouana, Rodrigue Roland Estournes Claude Rehspringer Jean-Luc. "Elaboration des matériaux à bande interdite photonique". Strasbourg : Université Louis Pasteur, 2006. http://eprints-scd-ulp.u-strasbg.fr:8080/531/01/MAFOUANA2006.pdf.
Testo completoChauvet-Guibert, Catherine. "Croissance et caractérisation d'hétérostructures ZnBeSe à large bande interdite". Nice, 2001. http://www.theses.fr/2001NICE5596.
Testo completoRecently, a new family of II-VI wide band gap compounds which is the Be chalcogenides came under focus. These materials are interesting for several reasons. They exhibit a high covalence bonding, which could be positive for increasing the life time of devices based on these materials. Zn(Mg)BeSe allows can also be grown lattice-matched to several commercial substrates like GaAs, Si, GaP. Furthermore, very few experimental data are available on Be-Compounds. Thus the study of BeX physical properties is of fundamental interest. This work deals more particularly with the growth and characterization of ZnBeSe heterostructures. In order to achieve a good epitaxy of ZnBeSe onto silicon, we have shown that the main difdficulty is the reactivity between the components at the interface. We have always obtained a 3D nucleation even for a lattice-matched alloy, which is probably due to a strong affinity between Si and Se. Afterwards, we have realized the first growth of ZnBeSe on GaP substrate. We have achieved a much better crystalline quality than onto Silicon. Finally, we have studied the physical properties of ZnBeSe ternary alloys. The variations of the direct gap have been measured for the first time over the whole composition. This allows to evidence the position of the direct to indirect gap cross-over in the alloy at 46% Be. Phonon LO and TO energies has also been determined by Raman spectroscopy
Pointereau, Elisa. "Etude d’antennes à bande interdite électromagnétique omnidirectionnelles en azimut". Limoges, 2007. https://aurore.unilim.fr/theses/nxfile/default/ea821a8e-a360-4ebf-820d-e7199f62be6e/blobholder:0/2007LIMO4013.pdf.
Testo completoThis thesis, managed with the RADIALL group, is dedicated to the study of base station antennas conceived with electromagnetic band gap (EBG) materials. These structures boast an omnidirectional radiation pattern in the azimuth plane with a high gain. Two structures have been considered: the cylindrical antenna and the coaxial antenna with a metallic center core. After having presented the sources of excitation as well as dielectric and metallic EBG materials, abacuses have been purposed to facilitate the design. Performances improvement techniques made it possible to increase the directivity, to widen the radiation bandwidth and finally to match the antennas. Two antenna prototypes have been realized. The experimental performances have then been compared to a competitive technology: dipole arrays. Lastly, other polarizations have been studied. An antenna in horizontal polarization has been realized which measurement successfully confirmed the theoretical functioning. Double polarization and circular polarization have only been simulated due to the structure complexity
Libri sul tema "Énergie de la bande interdite"
1921-, Bhargava Rameshwar Nath, a cura di. Properties of wide bandgap II-VI semiconductors. London, U.K: INSPEC, Institute of Electrical Engineers, 1997.
Cerca il testo completoJ, Pearton S., a cura di. Wide bandgap semiconductors: Growth, processing and applications. Park Ridge, N.J: Noyes Publications, 2000.
Cerca il testo completo1936-1984, McMillan William L., Hutiray Gy, So lyom J e International Conference on Charge Density Waves in Solids (1984 : Budapest, Hungary)., a cura di. Charge density waves in solids: Proceedings of the International Conference held in Budapest, Hungary, September 3-7, 1984. Berlin: Springer-Verlag, 1985.
Cerca il testo completoConduction in non-crystalline materials. Oxford: Clarendon Press, 1987.
Cerca il testo completoF, Mott N. Conduction in non-crystalline materials. 2a ed. Oxford: Clarendon Press, 1993.
Cerca il testo completoNATO Advanced Research Workshop on Narrow-Band Phenomena--Influence of Electrons with Both Band and Localized Character (1987 Staverden, Netherlands). Narrow-band phenomena--influence of electrons with both band and localized character. New York: Plenum Press, 1988.
Cerca il testo completoNarrow Gap Semiconductors 1995: Proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 (Institute of Physics Conference Series). Taylor & Francis, 1995.
Cerca il testo completoProperties of Wide Bandgap Ii-VI Semiconductors (E M I S Datareviews Series). Institution of Electrical Engineers, 1997.
Cerca il testo completoLitvinov, Vladimir. Wide Bandgap Semiconductor Spintronics. Jenny Stanford Publishing, 2016.
Cerca il testo completoWide Bandgap Semiconductor Spintronics. Taylor & Francis Group, 2016.
Cerca il testo completo