Articoli di riviste sul tema "Electrical measurements C-V and G-V"
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Özden, Şadan, Ömer Güllü e Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices". European Physical Journal Applied Physics 82, n. 2 (maggio 2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.
Testo completoPadma, R., e V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode". Физика и техника полупроводников 51, n. 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.
Testo completoFaraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur e Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode". Advances in Condensed Matter Physics 2020 (13 aprile 2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.
Testo completoPadovani, Andrea, Ben Kaczer, Milan Pesic, Attilio Belmonte, Mihaela Popovici, Laura Nyns, Dimitri Linten et al. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements". IEEE Transactions on Electron Devices 66, n. 4 (aprile 2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.
Testo completoPananakakis, G., e G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science Letters 168, n. 1-3 (marzo 1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.
Testo completoPananakakis, G., e G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science 168, n. 1-3 (marzo 1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.
Testo completoAltındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik e Yashar Azizian-Kalandaragh. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation". Physica Scripta 96, n. 12 (1 dicembre 2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.
Testo completoKoliakoudakis, C., J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou e Konstantinos Zekentes. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC". Materials Science Forum 615-617 (marzo 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.
Testo completoAfandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva e Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements". Microelectronic Engineering 85, n. 2 (febbraio 2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.
Testo completoGiannazzo, Filippo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger e Heiko B. Weber. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts". Materials Science Forum 778-780 (febbraio 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.
Testo completoDAŞ, Elif. "Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode". Sakarya University Journal of Science 26, n. 5 (20 ottobre 2022): 1000–1009. http://dx.doi.org/10.16984/saufenbilder.1129742.
Testo completoKaya, A., Ö. Sevgili e Ş. Altındal. "Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method". International Journal of Modern Physics B 28, n. 17 (29 maggio 2014): 1450104. http://dx.doi.org/10.1142/s0217979214501045.
Testo completoMazurak, Andrzej, Jakub Jasin´ski e Bogdan Majkusiak. "Determination of border/bulk traps parameters based on (C-G-V) admittance measurements". Journal of Vacuum Science & Technology B 37, n. 3 (maggio 2019): 032904. http://dx.doi.org/10.1116/1.5060674.
Testo completoGüler, G., Ö. Güllü, S. Karataş e Ö. F. Bakkaloǧlu. "Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I – V and C – V Measurements". Chinese Physics Letters 26, n. 6 (giugno 2009): 067301. http://dx.doi.org/10.1088/0256-307x/26/6/067301.
Testo completoDemirbilek, Nihat, Fahrettin Yakuphanoğlu e Mehmet Kaya. "Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes". Materials Testing 63, n. 3 (1 marzo 2021): 279–85. http://dx.doi.org/10.1515/mt-2020-0042.
Testo completoÖzdemir, Orhan, Beyhan Tatar, Deneb Yılmazer, Pınar Gökdemir e Kubilay Kutlu. "Correlation of DC and AC electrical properties of Al/p-Si structure by I–V–T and C(G/ω)–V–T measurements". Materials Science in Semiconductor Processing 12, n. 4-5 (agosto 2009): 133–41. http://dx.doi.org/10.1016/j.mssp.2009.09.005.
Testo completoÇetinkaya, H. G., D. E. Yıldız e Ş. Altındal. "On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity". International Journal of Modern Physics B 29, n. 01 (18 dicembre 2014): 1450237. http://dx.doi.org/10.1142/s0217979214502373.
Testo completoThi, Tran Anh Tuan, Dong-Hau Kuo, Phuong Thao Cao, Pham Quoc-Phong, Vinh Khanh Nghi e Nguyen Phuong Lan Tran. "Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode". Coatings 9, n. 10 (21 ottobre 2019): 685. http://dx.doi.org/10.3390/coatings9100685.
Testo completoKhelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida e Jamal Bougdira. "Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction". Defect and Diffusion Forum 406 (gennaio 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.
Testo completoKhelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida e Jamal Bougdira. "Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction". Defect and Diffusion Forum 406 (gennaio 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.
Testo completoAlexandrova, S., e A. Szekeres. "Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon". Solid State Phenomena 159 (gennaio 2010): 163–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.163.
Testo completoCañas, J., C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez e E. Gheeraert. "High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors". Applied Physics Letters 121, n. 7 (15 agosto 2022): 072101. http://dx.doi.org/10.1063/5.0103037.
Testo completoHIROSE, Fumihiko, Yasuo KIMURA e Michio NIWANO. "P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements". IEICE Transactions on Electronics E92-C, n. 12 (2009): 1475–78. http://dx.doi.org/10.1587/transele.e92.c.1475.
Testo completoRyu, K., I. Kymissis, V. Bulovic e C. G. Sodini. "Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements". IEEE Electron Device Letters 26, n. 10 (ottobre 2005): 716–18. http://dx.doi.org/10.1109/led.2005.854394.
Testo completoKabra, Vinay, Lubna Aamir e M. M. Malik. "Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization". Beilstein Journal of Nanotechnology 5 (24 novembre 2014): 2216–21. http://dx.doi.org/10.3762/bjnano.5.230.
Testo completoNakano, Yoshitaka, Liwen Sang e Masatomo Sumiya. "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications". MRS Proceedings 1635 (2014): 29–34. http://dx.doi.org/10.1557/opl.2014.205.
Testo completoDe Cogan, D., e A. Alani. "Double-resonance technique for C/V measurements of semiconductor devices". Electronics Letters 21, n. 24 (1985): 1153. http://dx.doi.org/10.1049/el:19850816.
Testo completoBahari, Ali, Masoud Ebrahimzadeh e Reza Gholipur. "Structural and electrical properties of zirconium doped yttrium oxide nanostructures". International Journal of Modern Physics B 28, n. 16 (13 maggio 2014): 1450102. http://dx.doi.org/10.1142/s0217979214501021.
Testo completoBelkouch, S., L. Paquin, A. Deneuville e E. Gheeraert. "Caractérisation physicochimique et électronique de la structure Pt–a-Si: H–c-Si(n)". Canadian Journal of Physics 69, n. 3-4 (1 marzo 1991): 357–60. http://dx.doi.org/10.1139/p91-060.
Testo completoBita, Bogdan, Sorin Vizireanu, Daniel Stoica, Valentin Ion, Sasa Yehia, Adrian Radu, Sorina Iftimie e Gheorghe Dinescu. "On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition". Journal of Nanomaterials 2020 (1 ottobre 2020): 1–6. http://dx.doi.org/10.1155/2020/8814459.
Testo completoAlisha, P. Chander, V. K. Malik e R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films". Journal of Physics: Conference Series 2518, n. 1 (1 giugno 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.
Testo completoTokusu, Toji, Hirokazu Miyabayashi, Yuji Hiruma, Hajime Nagata e Tadashi Takenaka. "Electrical Properties and Piezoelectric Properties of CaBi2Ta2O9-Based Ceramics". Key Engineering Materials 421-422 (dicembre 2009): 46–49. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.46.
Testo completoZhang, Shiyu, Zeng Liu, Yuanyuan Liu, Yusong Zhi, Peigang Li, Zhenping Wu e Weihua Tang. "Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes". Micromachines 12, n. 3 (3 marzo 2021): 259. http://dx.doi.org/10.3390/mi12030259.
Testo completoALI, A. N. M., e E. M. NASIR. "CHARACTERIZATION OF (ZnO)1-X-(CuO)x/GaAs HETEROJUNCTION SOLAR CELL GROWN BY PULSED LASER DEPOSITION". Digest Journal of Nanomaterials and Biostructures 16, n. 1 (gennaio 2021): 169–74. http://dx.doi.org/10.15251/djnb.2021.161.169.
Testo completoKumar, Neeraj, e Rabinder Nath. "Ferroelectric and Electrical Properties of Potassium Nitrate Thin Composite Layers". Advanced Materials Research 403-408 (novembre 2011): 607–17. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.607.
Testo completoSelçuk, A. H., E. Orhan, S. Bilge Ocak, A. B. Selçuk e U. Gökmen. "Investigation of dielectric properties of heterostructures based on ZnO structures". Materials Science-Poland 35, n. 4 (20 marzo 2018): 885–92. http://dx.doi.org/10.1515/msp-2017-0108.
Testo completoKarataş, Ş., Ş. Altındal, A. Türüt e M. Çakar. "Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements". Physica B: Condensed Matter 392, n. 1-2 (aprile 2007): 43–50. http://dx.doi.org/10.1016/j.physb.2006.10.039.
Testo completoThompson, J. R., J. J. Dubowski e D. J. Northcott. "Electrical characterization of CdTe–InSb heterojunctions". Canadian Journal of Physics 69, n. 3-4 (1 marzo 1991): 274–77. http://dx.doi.org/10.1139/p91-046.
Testo completoPorter, L. M., R. F. Davis, J. S. Bow, M. J. Kim, R. W. Carpenter e R. C. Glass. "Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)". Journal of Materials Research 10, n. 3 (marzo 1995): 668–79. http://dx.doi.org/10.1557/jmr.1995.0668.
Testo completoStark, Roger, Alexander Tsibizov, Salvatore Race, Thomas Ziemann, Ivana Kovacevic-Badstubner e Ulrike Grossner. "Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements". Materials Science Forum 1092 (6 giugno 2023): 165–70. http://dx.doi.org/10.4028/p-06b54k.
Testo completoKim, Minyeong, Nolan Hendricks, Neil Moser, Pragya Shrestha, Sujitra Pookpanratana, Sang-Mo Koo e Qiliang Li. "Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure". ECS Meeting Abstracts MA2023-01, n. 32 (28 agosto 2023): 1840. http://dx.doi.org/10.1149/ma2023-01321840mtgabs.
Testo completoPellegrino, Domenico, Lucia Calcagno, Massimo Zimbone, Salvatore Di Franco e Antonella Sciuto. "Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions". Materials 14, n. 8 (14 aprile 2021): 1966. http://dx.doi.org/10.3390/ma14081966.
Testo completoUmar, Marjoni Imamora Ali. "Graphene-Au Film Synthesized from GrO in Au-Aquaeus Solution as Counter Electrode For DSSC Application". Lensa: Jurnal Kependidikan Fisika 7, n. 2 (31 dicembre 2019): 24. http://dx.doi.org/10.33394/j-lkf.v7i2.2644.
Testo completoJungwirth, Felix, Daniel Knez, Fabrizio Porrati, Alfons G. Schuck, Michael Huth, Harald Plank e Sven Barth. "Vanadium and Manganese Carbonyls as Precursors in Electron-Induced and Thermal Deposition Processes". Nanomaterials 12, n. 7 (28 marzo 2022): 1110. http://dx.doi.org/10.3390/nano12071110.
Testo completoFaraz, Sadia Muniza, Muhammed Naveed Alvi, Anne Henry, Omer Nour, Magnus Willander e Qamar Ul Wahab. "Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes". Advanced Materials Research 324 (agosto 2011): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.324.233.
Testo completoLEE, SEUNGJAE, e KIJUNG YONG. "SELF-LIMITING GROWTH OF TITANIUM SILICATE AND EFFECTS OF THERMAL ANNEALING ON THE ELECTRICAL PROPERTIES OF TITANIUM SILICATE/SiO2". Surface Review and Letters 14, n. 05 (ottobre 2007): 921–25. http://dx.doi.org/10.1142/s0218625x07010433.
Testo completoDevi, V. Lakshmi, I. Jyothi e V. Rajagopal Reddy. "Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP". Canadian Journal of Physics 90, n. 1 (gennaio 2012): 73–81. http://dx.doi.org/10.1139/p11-142.
Testo completoIdris, Muhammad I., Nick G. Wright e Alton B. Horsfall. "Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors". Materials Science Forum 924 (giugno 2018): 486–89. http://dx.doi.org/10.4028/www.scientific.net/msf.924.486.
Testo completoYücedağ, İ., A. Kaya e Ş. Altındal. "On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures". International Journal of Modern Physics B 28, n. 23 (13 luglio 2014): 1450153. http://dx.doi.org/10.1142/s0217979214501537.
Testo completoHong, J. H., e Jae Min Myoung. "Characteristics of HfO2 Dielectric Layer Grown by MOMBE". Materials Science Forum 449-452 (marzo 2004): 1005–8. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.1005.
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