Articoli di riviste sul tema "Electrical dopant activation"
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Kennedy, Noel, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes e Brenda Long. "Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates". Beilstein Journal of Nanotechnology 9 (6 agosto 2018): 2106–13. http://dx.doi.org/10.3762/bjnano.9.199.
Testo completoWang, Xiqiao, Joseph A. Hagmann, Pradeep Namboodiri, Jonathan Wyrick, Kai Li, Roy E. Murray, Alline Myers et al. "Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers". Nanoscale 10, n. 9 (2018): 4488–99. http://dx.doi.org/10.1039/c7nr07777g.
Testo completoChung, Suk, Shane R. Johnson, Ding Ding, Yong-Hang Zhang, David J. Smith e Martha R. McCartney. "Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography". IEEE Transactions on Electron Devices 56, n. 10 (settembre 2009): 1919–23. http://dx.doi.org/10.1109/ted.2009.2025914.
Testo completoWeber, W. J., C. W. Griffin e J. L. Bates. "Electrical and thermal transport properties of the Y1 − x Mx CrO3 system". Journal of Materials Research 1, n. 5 (ottobre 1986): 675–84. http://dx.doi.org/10.1557/jmr.1986.0675.
Testo completoRanchoux, B., e J. F. Currie. "Étude des corrélations entre paramètres de préparation, caractéristiques électriques et physico-chimiques d'échantillons de a-Si : H dopés ou non". Canadian Journal of Physics 63, n. 1 (1 gennaio 1985): 54–58. http://dx.doi.org/10.1139/p85-009.
Testo completoBrandt, Matthias, Holger von Wenckstern, Christoph Meinecke, Tilman Butz, Holger Hochmuth, Michael Lorenz e Marius Grundmann. "Dopant activation in homoepitaxial MgZnO:P thin films". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, n. 3 (2009): 1604. http://dx.doi.org/10.1116/1.3086657.
Testo completoCifuentes, N., E. R. Viana, H. Limborço, D. B. Roa, A. Abelenda, M. I. N. da Silva, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira e J. C. González. "Electrical Properties of Polytypic Mg Doped GaAs Nanowires". Journal of Nanomaterials 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/9451319.
Testo completoSierakowski, Kacper, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi e Michal Bockowski. "High Pressure Processing of Ion Implanted GaN". Electronics 9, n. 9 (26 agosto 2020): 1380. http://dx.doi.org/10.3390/electronics9091380.
Testo completoSong, Xi, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard e Daniel Alquier. "Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements". Materials Science Forum 679-680 (marzo 2011): 193–96. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.193.
Testo completoRahim, Madatov, Najafov Arzu, Alakbarov Aydin, Tagiev Teymur e Khaliqzadeh Aydan. "Features of Electrical and Photoelectric Properties of GaS(Yb) Monocrystals". Zeitschrift für Naturforschung A 74, n. 9 (25 settembre 2019): 821–25. http://dx.doi.org/10.1515/zna-2018-0475.
Testo completoOttaviani, Laurent, Stéphane Biondo, Stéphane Morata, Olivier Palais, Thierry Sauvage e Frank Torregrosa. "Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples". Materials Science Forum 645-648 (aprile 2010): 717–20. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.717.
Testo completoJamal, Raied K. "Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition". Iraqi Journal of Physics (IJP) 14, n. 29 (3 febbraio 2019): 37–43. http://dx.doi.org/10.30723/ijp.v14i29.218.
Testo completoMorata, Stéphane, Frank Torregrosa e Thierry Bouchet. "Simulation of Ion Implantation in SiC: Dopant Profiling and Activation". Materials Science Forum 615-617 (marzo 2009): 449–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.449.
Testo completoWeng, Ming Hung, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore di Franco, Corrado Bongiorno, Mario Saggio e Vito Raineri. "Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC". Materials Science Forum 645-648 (aprile 2010): 713–16. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.713.
Testo completoPelaz, L., M. Aboy, P. Lopez e L. A. Marques. "Atomistic modeling of dopant implantation, diffusion, and activation". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, n. 5 (2006): 2432. http://dx.doi.org/10.1116/1.2348726.
Testo completoChen, Z. M., S. K. Wong, P. K. John, M. Prasad e B. Y. Tong. "Crystallization and dopant activation of amorphous silicon films by light annealing". Canadian Journal of Physics 63, n. 6 (1 giugno 1985): 719–22. http://dx.doi.org/10.1139/p85-113.
Testo completoZhang, Xiaolong, Wipakorn Jevasuwan e Naoki Fukata. "Interfacial intermixing of Ge/Si core–shell nanowires by thermal annealing". Nanoscale 12, n. 14 (2020): 7572–76. http://dx.doi.org/10.1039/c9nr09938g.
Testo completoStepura, A. L., O. I. Aksimentyeva e P. Yu Demchenko. "Features of the Structure and Physical-Chemical Properties of Poly-Ortho-Toluidine Doped with Toluenesulfonic Acid". Фізика і хімія твердого тіла 20, n. 1 (1 aprile 2019): 77–82. http://dx.doi.org/10.15330/pcss.20.1.82.
Testo completoBlanqué, Servane, R. Pérez, Narcis Mestres, Sylvie Contreras, Jean Camassel e Phillippe Godignon. "Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers". Materials Science Forum 527-529 (ottobre 2006): 795–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.795.
Testo completoPanknin, D., E. Wieser, R. Grötzschel, C. E. Richter, M. Gericke, Ya V. Fattachov e I. B. Khaibullin. "Dopant distribution and electrical activation of Si implanted GaAs by short time annealing". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (gennaio 1987): 492–95. http://dx.doi.org/10.1016/s0168-583x(87)80098-8.
Testo completoQueirolo, G., C. Bresolin, D. Robba, M. Anderle, R. Canteri, A. Armigliato, G. Ottaviani e S. Frabboni. "Low temperature dopant activation of BF2 implanted silicon". Journal of Electronic Materials 20, n. 5 (maggio 1991): 373–78. http://dx.doi.org/10.1007/bf02670886.
Testo completoAl-Douri, Ala J., F. Y. Al-Shakily, Abdalla A. Alnajjar e Maysoon F. A. Alias. "The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films". Advances in Condensed Matter Physics 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/910967.
Testo completoAbdul Karim, Hussein Jamal, e Ghuson H. Mohammed. "Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique". Iraqi Journal of Physics (IJP) 19, n. 49 (18 maggio 2021): 75–81. http://dx.doi.org/10.30723/ijp.v19i49.608.
Testo completoBhabad, V. D. "Electrical, Thermoelectrical and PEC Studies of Copper Doped CdSe Thin Films". International Journal for Modern Trends in Science and Technology 6, n. 5 (26 maggio 2020): 60–66. http://dx.doi.org/10.46501/ijmtst060510.
Testo completoAhmad, Afaq. "Composition-induced phase transition in a [Ag2HgI4:0.2AgI] mixed composite system doped with CuI". Open Chemistry 8, n. 6 (1 dicembre 2010): 1227–35. http://dx.doi.org/10.2478/s11532-010-0098-8.
Testo completoKögler, Reinhard, Xin Ou, Nadine Geyer, Pratyush Das Kanungo, Daniel Schwen, Peter Werner e Wolfgang Skorupa. "Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy". Solid State Phenomena 178-179 (agosto 2011): 50–55. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.50.
Testo completoSOBHY, MAGED S. "EFFECT OF Ni ON THE ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF NANOCRYSTALLITES Fe2O3/TiO2 SYSTEM". Surface Review and Letters 13, n. 04 (agosto 2006): 479–84. http://dx.doi.org/10.1142/s0218625x06008712.
Testo completoZographos, Nikolas, e Axel Erlebach. "Process simulation of dopant diffusion and activation in germanium". physica status solidi (a) 211, n. 1 (5 dicembre 2013): 143–46. http://dx.doi.org/10.1002/pssa.201300123.
Testo completoFrazzetto, Alessia, Fabrizio Roccaforte, Filippo Giannazzo, R. Lo Nigro, M. Saggio, Edoardo Zanetti e Vito Raineri. "Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC". Materials Science Forum 717-720 (maggio 2012): 825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.825.
Testo completoLee, Yao-Jen, Shang-Shiun Chuang, Fu-Kuo Hsueh, Ho-Ming Lin, Shich-Chuang Wu, Ching-Yi Wu e Tseung-Yuen Tseng. "Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing". IEEE Electron Device Letters 32, n. 2 (febbraio 2011): 194–96. http://dx.doi.org/10.1109/led.2010.2090937.
Testo completoIrfan, M., e A. Shakoor. "Structural and electrical properties of dodecylbenzene sulphonicacid doped polypyrrole/zirconium oxide composites". Revista Mexicana de Física 65, n. 6 Nov-Dec (31 ottobre 2019): 607. http://dx.doi.org/10.31349/revmexfis.65.607.
Testo completoSpera, Monia, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo e Fabrizio Roccaforte. "Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings". Materials 12, n. 21 (23 ottobre 2019): 3468. http://dx.doi.org/10.3390/ma12213468.
Testo completoChen, Li An, En Hai Jiang, Xing Feng Zhu e Ling Fu Chen. "Novel diffusions of interstitial atoms in II–VI compounds zinc selenide". Modern Physics Letters B 29, n. 11 (30 aprile 2015): 1550044. http://dx.doi.org/10.1142/s021798491550044x.
Testo completoSaid, Muzalifah Mohd, Zul Atfyi Fauzan Mohammed Napiah, Faiz Arith e Zarina Mohd Noh. "NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation". Advanced Materials Research 716 (luglio 2013): 248–53. http://dx.doi.org/10.4028/www.scientific.net/amr.716.248.
Testo completoKhramtsov, Igor A., e Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors". Materials 12, n. 12 (19 giugno 2019): 1972. http://dx.doi.org/10.3390/ma12121972.
Testo completoChandra, Aditi, Mao Takashima e Arvind Kamath. "Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils". MRS Advances 2, n. 23 (2017): 1259–65. http://dx.doi.org/10.1557/adv.2017.227.
Testo completoSong, Xi, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Thierry Chassagne, Marc Portail, Emmanuel Collard e Daniel Alquier. "Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si". Materials Science Forum 711 (gennaio 2012): 154–58. http://dx.doi.org/10.4028/www.scientific.net/msf.711.154.
Testo completoRamelow, Ulku S., Samantha N. Braganza e Gerald J. Ramelow. "Electrical conductivities of photochemically prepared polyethylene glycol dimethacrylate, reacted with iodine and lithium perchlorate dopants and activation energy determination for polymer-dopant interaction". Journal of Applied Polymer Science 112, n. 4 (15 maggio 2009): 1916–26. http://dx.doi.org/10.1002/app.29759.
Testo completoLanza, F., R. Feduzi e J. Fuger. "Effects of lithium oxide on the electrical properties of CuO at low temperatures". Journal of Materials Research 5, n. 8 (agosto 1990): 1739–44. http://dx.doi.org/10.1557/jmr.1990.1739.
Testo completoFolkersma, Steven, Janusz Bogdanowicz, Paola Favia, Lennaert Wouters, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Former Nielsen, Lior Shiv e Wilfried Vandervorst. "Apparent size effects on dopant activation in nanometer-wide Si fins". Journal of Vacuum Science & Technology B 39, n. 2 (marzo 2021): 023202. http://dx.doi.org/10.1116/6.0000921.
Testo completoBazin, Anne Elisabeth, Frédéric Cayrel, Mohamed Lamhamdi, Arnaud Yvon, Jean Christophe Houdbert, Emmanuel Collard e Daniel Alquier. "Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon". Materials Science Forum 711 (gennaio 2012): 213–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.213.
Testo completoMolnar, Wolfgang, Alois Lugstein, Tomasz Wojcik, Peter Pongratz, Norbert Auner, Christian Bauch e Emmerich Bertagnolli. "Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor". Beilstein Journal of Nanotechnology 3 (31 luglio 2012): 564–69. http://dx.doi.org/10.3762/bjnano.3.65.
Testo completoTakeuchi, H., P. Ranade e Tsu-Jae King. "Suppression of boron TED by low temperature SPC anneal prior to dopant activation". IEEE Transactions on Electron Devices 49, n. 12 (dicembre 2002): 2343–44. http://dx.doi.org/10.1109/ted.2002.804694.
Testo completoVemuri, Rajitha N. P., Mandar J. Gadre, N. D. Theodore e T. L. Alford. "Dopant Activation in Arsenic-Implanted Si by Susceptor-Assisted Low-Temperature Microwave Anneal". IEEE Electron Device Letters 32, n. 8 (agosto 2011): 1122–24. http://dx.doi.org/10.1109/led.2011.2157453.
Testo completoHansen, K., E. Peiner, A. Schlachetzki e M. Von Ortenberg. "Dopant activation energy and hole effective mass in heavily Zn-Doped InP". Journal of Electronic Materials 23, n. 9 (settembre 1994): 935–41. http://dx.doi.org/10.1007/bf02655368.
Testo completoPriolo, Francesco, Giovanni Mannino, Monica Miccichè, Vittorio Privitera, Enrico Napolitani e Alberto Carnera. "Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si". Applied Physics Letters 72, n. 23 (8 giugno 1998): 3011–13. http://dx.doi.org/10.1063/1.121524.
Testo completoKato, Juri. "The Annealing Time and Temperature Dependence of Electrical Dopant Activation in High‐Dose BF 2 Ion Implanted Silicon". Journal of The Electrochemical Society 141, n. 11 (1 novembre 1994): 3158–61. http://dx.doi.org/10.1149/1.2059294.
Testo completoBranz, Howard M., e Brian A. Gregg. "Dopant Pairing in a Molecular Semiconductor". MRS Proceedings 725 (2002). http://dx.doi.org/10.1557/proc-725-p4.2.
Testo completoKlappe, Jos G. E., István Bársony, Pierre H. Woerlee, Tom W. Ryan e P. Alkemade. "Rapid Thermal Annealing of Low-Energy P and B Implants in Silicon, Optimized by High Resolution X-Ray Diffraction". MRS Proceedings 342 (1994). http://dx.doi.org/10.1557/proc-342-363.
Testo completoChao, Y. L., S. Prussin, J. C. S. Woo e R. Scholz. "Dopant Activation in bulk germanium and Germanium-on-Insulator". MRS Proceedings 829 (2004). http://dx.doi.org/10.1557/proc-829-b9.18.
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