Articoli di riviste sul tema "Delta doping"
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Gossmann, H. J., e E. F. Schubert. "Delta doping in silicon". Critical Reviews in Solid State and Materials Sciences 18, n. 1 (gennaio 1993): 1–67. http://dx.doi.org/10.1080/10408439308243415.
Testo completoKulbachinskii, V. A., V. G. Kytin, R. A. Lunin, A. V. Golikov, V. G. Mokerov, A. S. Bugaev, A. P. Senichkin, R. T. F. van Schaijk, A. de Visser e P. M. Koenraad. "Sn delta-doping in GaAs". Semiconductor Science and Technology 14, n. 12 (8 novembre 1999): 1034–41. http://dx.doi.org/10.1088/0268-1242/14/12/304.
Testo completoBénière, François, René Chaplain, Marcel Gauneau, Viswanatha Reddy e André Régrény. "Delta-doping in diffusion studies". Journal de Physique III 3, n. 12 (dicembre 1993): 2165–71. http://dx.doi.org/10.1051/jp3:1993259.
Testo completoZeindl, H. P., E. Hammerl, W. Kiunke e I. Eisele. "Delta doping superlattices in silicon". Journal of Electronic Materials 19, n. 10 (ottobre 1990): 1119–22. http://dx.doi.org/10.1007/bf02651991.
Testo completoKim, Jong-Hee, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim e Hyung Jae Lee. "Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 305–9. http://dx.doi.org/10.1557/s1092578300002635.
Testo completoSchubert, E. F., e R. F. Kopf. "Delta-Doping in III-V Semiconductors". Materials Science Forum 65-66 (gennaio 1991): 53–66. http://dx.doi.org/10.4028/www.scientific.net/msf.65-66.53.
Testo completoEisele, I. "Delta-type doping profiles in silicon". Applied Surface Science 36, n. 1-4 (gennaio 1989): 39–51. http://dx.doi.org/10.1016/0169-4332(89)90897-0.
Testo completoZagwijn, P. M., Y. N. Erokhin, W. F. J. Slijkerman, J. F. van der Veen, G. F. A. van de Walle, D. J. Gravesteijn e A. A. van Gorkum. "Ga delta‐doping layers in silicon". Applied Physics Letters 59, n. 12 (16 settembre 1991): 1461–63. http://dx.doi.org/10.1063/1.105288.
Testo completoZervos, Matthew. "Delta(δ)-doping of semiconductor nanowires". physica status solidi (RRL) - Rapid Research Letters 7, n. 9 (1 luglio 2013): 651–54. http://dx.doi.org/10.1002/pssr.201307219.
Testo completoButler, James E., Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev et al. "Nanometric diamond delta doping with boron". physica status solidi (RRL) - Rapid Research Letters 11, n. 1 (7 dicembre 2016): 1600329. http://dx.doi.org/10.1002/pssr.201600329.
Testo completoLiu, Wen-Chau, e Chung-Yih Sun. "Properties of Sawtooth-Doping Superlattice with Different Delta-Doping Densities". Japanese Journal of Applied Physics 30, Part 1, No. 4 (15 aprile 1991): 635–36. http://dx.doi.org/10.1143/jjap.30.635.
Testo completoCai, Yan, e Jurgen Michel. "High n-Type Doping in Ge for Optical Gain and Lasing". Solid State Phenomena 205-206 (ottobre 2013): 394–99. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.394.
Testo completoYarn, K. F. "MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors". Active and Passive Electronic Components 25, n. 3 (2002): 239–43. http://dx.doi.org/10.1080/08827510213499.
Testo completoHenry, Anne, L. Storasta e Erik Janzén. "Nitrogen Delta Doping in 4H-SiC Epilayers". Materials Science Forum 433-436 (settembre 2003): 153–56. http://dx.doi.org/10.4028/www.scientific.net/msf.433-436.153.
Testo completoHart, L., B. R. Davidson, J. M. Fernández, R. C. Newman e C. C. Button. "Carbon Delta-Doping In GaAs and AlAs". Materials Science Forum 196-201 (novembre 1995): 409–14. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.409.
Testo completoTribuzy, C. V. B., S. M. Landi, M. P. Pires, R. Butendeich, P. L. Souza, A. C. Bittencourt, G. E. Marques e A. B. Henriques. "nipi delta-doping superlattices for amplitude modulation". Brazilian Journal of Physics 32, n. 2a (giugno 2002): 269–74. http://dx.doi.org/10.1590/s0103-97332002000200006.
Testo completoTribuzy, C. V. B., P. L. Souza, S. M. Landi, M. P. Pires, R. Butendeich, A. C. Bittencourt, G. E. Marques e A. B. Henriques. "Delta-doping superlattices in multiple quantum wells". Physica E: Low-dimensional Systems and Nanostructures 11, n. 2-3 (ottobre 2001): 261–67. http://dx.doi.org/10.1016/s1386-9477(01)00215-6.
Testo completoJorke, H., e H. Kibbel. "Boron delta doping in Si and Si0.8Ge0.2layers". Applied Physics Letters 57, n. 17 (22 ottobre 1990): 1763–65. http://dx.doi.org/10.1063/1.104060.
Testo completoWinking, L., M. Wenderoth, T. C. G. Reusch, R. G. Ulbrich, P. J. Wilbrandt, R. Kirchheim, S. Malzer e G. Döhler. "Ideal delta doping of carbon in GaAs". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, n. 1 (2005): 267. http://dx.doi.org/10.1116/1.1856465.
Testo completoCerniansky, M., D. W. E. Allsopp e M. Hopkinson. "Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes". Electronics Letters 31, n. 6 (16 marzo 1995): 493–94. http://dx.doi.org/10.1049/el:19950314.
Testo completoMattey, N. L., M. Hopkinson, R. F. Houghton, M. G. Dowsett, D. S. McPhail, T. E. Whall, E. H. C. Parker, G. R. Booker e J. Whitehurst. "P-type delta doping in silicon MBE". Thin Solid Films 184, n. 1-2 (gennaio 1990): 15–19. http://dx.doi.org/10.1016/0040-6090(90)90392-q.
Testo completoKang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo e Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations". Materials Science Forum 556-557 (settembre 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.
Testo completoWang, Ke-Fan, Yongxian Gu, Xiaoguang Yang, Tao Yang e Zhanguo Wang. "Si delta doping inside InAs/GaAs quantum dots with different doping densities". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, n. 4 (luglio 2012): 041808. http://dx.doi.org/10.1116/1.4732462.
Testo completoKhusyainov, D. I., C. Dekeyser, A. M. Buryakov, E. D. Mishina, G. B. Galiev, E. A. Klimov, S. S. Pushkarev e A. N. Klochkov. "Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers". International Journal of Modern Physics B 31, n. 27 (24 ottobre 2017): 1750195. http://dx.doi.org/10.1142/s0217979217501958.
Testo completoNikiforov, Alexander I., B. Z. Kanter, S. I. Stenin e S. V. Rubanov. "Sb Delta-Type Doping in Si-MBE Superlattices". Materials Science Forum 69 (gennaio 1991): 17–20. http://dx.doi.org/10.4028/www.scientific.net/msf.69.17.
Testo completoAkhavan, Nima Dehdashti, Gilberto Armando Umana-Membreno, Renjie Gu, Jarek Antoszewski e Lorenzo Faraone. "Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors". IEEE Transactions on Electron Devices 65, n. 10 (ottobre 2018): 4340–45. http://dx.doi.org/10.1109/ted.2018.2861378.
Testo completoYokogawa, Toshiya, Kunimasa Takahashi, Takeshi Uenoyama, Osamu Kusumoto, Masao Uchida e Makoto Kitabatake. "Nitrogen delta doping in 6H silicon carbide layers". Journal of Applied Physics 89, n. 3 (2001): 1794. http://dx.doi.org/10.1063/1.1337937.
Testo completoCao, X. A., X. M. Li, S. Li e L. Y. Liu. "Conductivity Enhancement in Organic Electronics by Delta Doping". IEEE Electron Device Letters 37, n. 12 (dicembre 2016): 1628–31. http://dx.doi.org/10.1109/led.2016.2620184.
Testo completoPolly, Stephen J., David V. Forbes, Kristina Driscoll, Staffan Hellstrom e Seth M. Hubbard. "Delta-Doping Effects on Quantum-Dot Solar Cells". IEEE Journal of Photovoltaics 4, n. 4 (luglio 2014): 1079–85. http://dx.doi.org/10.1109/jphotov.2014.2316677.
Testo completoBöer, K. W., e J. Piprek. "Inverse delta doping for improvement of solar cells". Journal of Applied Physics 75, n. 10 (15 maggio 1994): 5095–101. http://dx.doi.org/10.1063/1.355753.
Testo completoAreiza, M. C. L., C. V. B. Tribuzy, S. M. Landi, M. P. Pires e P. L. Souza. "Amplitude Modulators containing an nipi delta doping superlattice". IEEE Photonics Technology Letters 17, n. 10 (ottobre 2005): 2071–73. http://dx.doi.org/10.1109/lpt.2005.854415.
Testo completoZagwijn, P. M., J. F. van der Veen, E. Vlieg, A. H. Reader e D. J. Gravesteijn. "A solution of the doping problem for Ga delta‐doping layers in Si". Journal of Applied Physics 78, n. 8 (15 ottobre 1995): 4933–38. http://dx.doi.org/10.1063/1.359782.
Testo completoZehe, Alfred, Eusebio Torres Tapia e Araceli Ramírez. "A METHOD OF MEASURING THERMAL STABILITY IN DELTA-DOPING". Revista de Investigación de Física 8, n. 02 (30 dicembre 2005): 19–25. http://dx.doi.org/10.15381/rif.v8i02.8550.
Testo completoZhao, Ying, Shengrui Xu, Hongchang Tao, Yachao Zhang, Chunfu Zhang, Lansheng Feng, Ruoshi Peng et al. "Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure". Materials 14, n. 1 (31 dicembre 2020): 144. http://dx.doi.org/10.3390/ma14010144.
Testo completoHenning, J. C. M., Y. A. R. R. Kessener, Paul M. Koenraad, M. R. Leys, W. C. van der Vleuten, J. H. Wolter e A. M. Frens. "Luminescence of a Delta Doping Related Exciton in GaAs:Si". Materials Science Forum 143-147 (ottobre 1993): 653–56. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.653.
Testo completoRosenberg, R. A., S. P. Frigo, Sunwoo Lee e P. A. Dowben. "Selective area, synchrotron radiation induced, delta doping of silicon". Journal of Applied Physics 71, n. 10 (15 maggio 1992): 4795–98. http://dx.doi.org/10.1063/1.350619.
Testo completoJoyce, T. B., T. J. Bullough, T. Farrell, B. R. Davidson, D. E. Sykes e A. Chew. "Carbon delta doping in chemical beam epitaxy using CBr4". Journal of Crystal Growth 175-176 (maggio 1997): 377–82. http://dx.doi.org/10.1016/s0022-0248(96)00957-8.
Testo completoSu, Yan Kuin, Ruey Lue Wang e Yeong Her Wang. "Negative Differential Resistance in GaAs Delta-Doping Tunneling Diodes". Japanese Journal of Applied Physics 30, Part 2, No. 2B (15 febbraio 1991): L292—L294. http://dx.doi.org/10.1143/jjap.30.l292.
Testo completoBayram, C., J. L. Pau, R. McClintock e M. Razeghi. "Delta-doping optimization for high quality p-type GaN". Journal of Applied Physics 104, n. 8 (15 ottobre 2008): 083512. http://dx.doi.org/10.1063/1.3000564.
Testo completoKozuka, Y., M. Kim, H. Ohta, Y. Hikita, C. Bell e H. Y. Hwang. "Enhancing the electron mobility via delta-doping in SrTiO3". Applied Physics Letters 97, n. 22 (29 novembre 2010): 222115. http://dx.doi.org/10.1063/1.3524198.
Testo completoKim, K. H., J. Li, S. X. Jin, J. Y. Lin e H. X. Jiang. "III-nitride ultraviolet light-emitting diodes with delta doping". Applied Physics Letters 83, n. 3 (21 luglio 2003): 566–68. http://dx.doi.org/10.1063/1.1593212.
Testo completoYoung, P. G., R. A. Mena, S. A. Alterovitz, S. E. Schacham e E. J. Haugland. "Temperature independent quantum well FET with delta channel doping". Electronics Letters 28, n. 14 (1992): 1352. http://dx.doi.org/10.1049/el:19920858.
Testo completoMuller, F., F. Koch e A. Kohl. "IR detection using subband absorption in delta -doping layers". Semiconductor Science and Technology 6, n. 12C (1 dicembre 1991): C133—C136. http://dx.doi.org/10.1088/0268-1242/6/12c/028.
Testo completoOhno, Kenichi, F. Joseph Heremans, Lee C. Bassett, Bryan A. Myers, David M. Toyli, Ania C. Bleszynski Jayich, Christopher J. Palmstrøm e David D. Awschalom. "Engineering shallow spins in diamond with nitrogen delta-doping". Applied Physics Letters 101, n. 8 (20 agosto 2012): 082413. http://dx.doi.org/10.1063/1.4748280.
Testo completoYanagisawa, Kohei, Suguru Takeuchi, Hirosi Yoshitake, Koji Onomitsu e Yosizi Horikoshi. "Enhanced magnetization by modulated Mn delta doping in GaAs". Journal of Crystal Growth 301-302 (aprile 2007): 634–37. http://dx.doi.org/10.1016/j.jcrysgro.2006.12.001.
Testo completoWang, Xiaohui, e Yijun Zhang. "Negative electron affinity GaN photocathode with Mg delta-doping". Optik 168 (settembre 2018): 278–81. http://dx.doi.org/10.1016/j.ijleo.2018.04.112.
Testo completoZhang, Yanchao, Li Yue, Xiren Chen, Jun Shao, Xin Ou e Shumin Wang. "Wavelength extension in GaSbBi quantum wells using delta-doping". Journal of Alloys and Compounds 744 (maggio 2018): 667–71. http://dx.doi.org/10.1016/j.jallcom.2018.02.027.
Testo completoChen, Yingda, Hualong Wu, Guanglong Yue, Zimin Chen, Zhiyuan Zheng, Zhisheng Wu, Gang Wang e Hao Jiang. "Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method". Applied Physics Express 6, n. 4 (1 aprile 2013): 041001. http://dx.doi.org/10.7567/apex.6.041001.
Testo completoGuo, S. P., W. Lin, X. Zhou, M. C. Tamargo, C. Tian, I. Kuskovsky e G. F. Neumark. "Highp-type doping of ZnBeSe using a modified delta-doping technique with N and Te". Journal of Applied Physics 90, n. 4 (15 agosto 2001): 1725–29. http://dx.doi.org/10.1063/1.1384863.
Testo completoHorsfall, Alton B., C. H. A. Prentice, Peter Tappin, Praneet Bhatnagar, Nicolas G. Wright, Konstantin Vassilevski e Irina P. Nikitina. "Optimisation of 4H-SiC MOSFET Structures for Logic Applications". Materials Science Forum 527-529 (ottobre 2006): 1325–28. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1325.
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